LAB DUE DATE:

Introduction to Semiconductor Diode Characteristics

and Parameter Extraction

Objective:
This is the first lab on a basic semiconductor component. The student will study
semiconductor characteristics (I-V, rectification) and some of their applications,
particularly modeling. This particular lab will study diodes. The student will learn how to
measure a diode’s I-V characteristics and rectification performance. The student will
graph the diode’s characteristics in EXCEL.

Theory:
The curve tracer is a very useful device to electrical engineers. This special type
of equipment is able to display the x-ray picture of a semiconductor device. The curve
tracer is an instrument that automatically and relatively quickly measures the
characteristic curves of electrical components.

Background:
Diodes and transistors are made from semiconducting materials: The utility of
semiconductors comes from the remarkable effects of placing p and n-type materials next
to each other. Such juxtapositions are called “pn” junctions. An isolated pn junction
makes a semiconductor diode. Other semiconductor components are made from more
complicated arrangements; bipolar npn transistors, for example, are made by sandwiching
a p layer in between two n layers, hence the name npn.
The current through an ideal pn junction is given by the diode equation.

Idiode(V)= isat exp( eV)/(n k T) - 1 , (1)

where V is the applied voltage drop across the junction, i s a t is a constant called the
saturation current and depends on the temperature and the particular geometry and
material of the junction, e C is the charge of an electron, k( J/K) is Boltzmann’s constant,
and T is the temperature in Kelvin. The constant n, is the ideality factor that varies
between 1 and 2 depending on the particular diode, but is typically equal to 2 for discrete
diodes. Notice that the diode’s response is directional and highly nonlinear. When
forward biased, (V positive) enormous currents can flow through the diode because of the
exponential dependence of I on V. When reversed biased, (V is negative), the current
approaches -i s a t . Since i s a t is typically very small (picoamps are not uncommon), very
little current flows. Thus the diode acts like a one-way valve; current can only flow in
one direction. When forward biased, the positive end of the diode is called the anode,
and the negative end is called the cathode.

Preliminary Work:
 1. Using the diode equation, plot the I-V characteristic for a diode having n=1.5,
Isat=1*10-9 A and VThermal = 26mV. Limit the current range to 0-10mA.
2. For this diode, determine the incremental resistance (rd) at
Idiode = .1, 1, and 10mA.
3. If this diode were used in the following circuit ( Figure 1.), and the +10V
supply voltage varied by 10%, how much would the output voltage vary?
4. Determine the line regulation of the diode circuit (change in output voltage /
change in input voltage). Express the results in percent and mV/V.
5. If the supply voltage is constant, but a 1kΩ load is added across the diode,
how much will the output voltage drop?
6. Determine the load regulation (change in output voltage / change in load
current). Express the results in mV/mA.

R1 = 1k

+ +
+1OV Vout
_
-

Figure 1.

PART 1. Diode Characterization using the Curve Tracer

A. Obtain a 1N4004 or 1N4007 Silicon diode.
B. Find the data sheet(s) for the diode you choose. Make sure to attach the data
sheet to lab in the Appendix section. (Note: Data sheets can be found via the
internet at http://www.national.com or http://www.motorola.com. Or you can
search by typing in the diode’s part number as a keyword, ie. 1N4004)
C. Use the data sheet to note the reverse saturation current (isat) at room
temperature for a reverse voltage of 40 V. Record this value.
D. Go to MEB 242 and locate the curve tracer. It should be situated on a long
desk to the right of the circuit workbenches, under the IEEE banner. The curve
tracer will have the number 577 on it. As you will notice, there are many buttons
on the device so it should be obvious why an exercise such as this one is so
important and helpful. The following are steps for setting up the equipment to
measure your device I-V characteristics.

1. At the upper right corner of the curve tracer you should be able to find
the power button. Pull it out to power up the equipment.

2. On the device there are two groups of ports labeled Collector, Base,
Emitter and sense. Connect one of the leads to the base port on the crème
 pad and the other to the emitter port. Make sure the ports are in the same
grouping.

3. Set the switch, located near the bottom edge of the tracer, to the side of
the group of ports you choose.

4. Attach alligator clips to the other ends of the leads.

5. On the tracer make sure that all the white buttons are pushed out and the
grey buttons are pushed in.

6. Set the variable collector to between 10%- 30%, the collector supply
polarity to NPN (+) and the Step/Offset Amp to 0.5 A.

7. Attach the base lead to the cathode and the emitter lead to the anode.

8. On the Emitter Grounded knob, make sure the white line is selecting
“emitter base breakdown.”

Now at this time there are five things you can change in order to get the I-V curve
to show up on the viewer. They are the series resistor, vertical current/div.,
horizontal volts/div., horizontal position and vertical position knobs. First, the
student should locate the beam finder button. By pressing and holding down this
button and maneuvering the horizontal and vertical positioning knobs, the student
should try to get the dot to the (0,0) point. From this point, values for the series
resistor, vertical current/div. And horizontal volts/div. Knobs should be kilo-ohm,
milliamperes, and volts, respectively. It is the student’s task to change these
values accordingly to get the plot.

E After getting the graph to display correctly on the viewer the student should
now take data points. The horizontal axis will be in terms of Volts/div and the
vertical axis will be in terms of milli-amperes/div. Record no less than 20 points
corresponding to the I-V curve on the curve tracer screen and plot the results in
EXCEL.
F. Record the voltage when the current is 1mA. [Note: This is the turn on voltage,
Vbi (built-in potential.]

PART 2. Diode Parameter Extraction

By using graphical techniques, the student will extract the parameters for Isat, Vbi and n
using EXCEL.
A. The student must use the I-V values obtained from PART 1 and create a semi-
log plot with the data. The student should double-click on the current-axis of
the curve and then select the logarithmic scale. The graph should now be
almost linear. Now double-click on the current-axis again and change
‘maximum’ in the scale menu to .001. Now the student should extrapolate the
 most linear part of the current curve to the y-axis in order to find the y-
intercept. Record this value. This is the saturation current, Isat.
B. After extrapolating and finding the Isat value the student should then record
the value that the linear curve crosses the x-axis. Record this value. This is the
turn-on voltage, Vbi.
C. In order to find n, the ideality factor take the slope of the most linear part of
the semi-logrithmic part of the curve. Record this value.
D. Using the ideal diode equation, solve for ln(Id). Use the values from A,B, and
C to graph Id and ln(Id). Compare these plots with the measured data.
(Note: You have just extracted the all the parameters needed to create a diode
model.)
E. What is a device model? Why are circuit models used? What are the
advantages of using a device model versus the measurements?

PART 3. Diode Characteristics

Build the diode circuit shown in Figure 2.

R1 = 1k

+ +
VS= +1OV VD
_
-

Figure 2.

3.1 Measure the diode voltage VD (1N4007) as the power supply is varied from 0 to 10
volts using the steps given in Table –1.