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Assignment 3

This document contains 20 physics problems related to semiconductor materials. The problems cover topics like calculating intrinsic carrier concentration, determining Fermi energy levels, and finding electron and hole concentrations for different semiconductor materials and doping conditions.

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kartiknaylak
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5 views

Assignment 3

This document contains 20 physics problems related to semiconductor materials. The problems cover topics like calculating intrinsic carrier concentration, determining Fermi energy levels, and finding electron and hole concentrations for different semiconductor materials and doping conditions.

Uploaded by

kartiknaylak
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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NATIONAL INSTITUTE OF TECHNOLOGY SIKKIM


Ravangla Campus
Programme: B.Tech. Year: 1st
Subject: Engineering Physics Subject code: PH11101

Paper: Engineering Physics ASSIGNMENT:3


1. Two semiconductor materials have exactly the same properties except material A has a bandgap energy of
0.90 eV and material B has a bandgap energy of 1.10 eV. Determine the ratio of ni of material B to that of
material A for T “ 300K.
2. The maximum intrinsic carrier concentration in a silicon device must be limited to 5 ˆ 1013 cm´3 . Assume
Eg “ 1.12 eV. Determine the maximum temperature allowed for the device.
` T ˘2
3. In a particular semiconductor material, the effective density of states functions are given by Nc “ Nc0 300
` T ˘2
and Nv “ Nv0 300 where Nc0 and Nv0 are constants independent of temperature. Experimentally de-
termined intrinsic carrier concentrations are found to be ni “ 1.40 ˆ 1010 cm´3 at T “ 200K and ni “
7.70 ˆ 1010 cm´3 at T “ 400K. Determine the product Nc0 ˆ Nv0 and the bandgap energy Eg . (Assume Eg
is constant over this temperature range.)
4. Calculate EF with respect to the center of the bandgap in silicon for T “ 300 K.
5. Calculate the ionization energy and radius of the donor electron in germanium using the Bohr theory.
6. Assume that EF ´ Ev “ 0.20eV in silicon. Plot npT q “ gpEqfi pEqdE over the range Ev ď E ď Ec ` 0.10 eV
for T “ 300K.
7. Silicon at T “ 300 K is doped with arsenic atoms such that the concentration of electrons is n “ 7ˆ1015 cm´3 .
(a) Find Ec ´ EF . (b) Determine EF ´ Ev . (c) Calculate po . (d) Which carrier is the minority carrier? (e)
Find EF ´ Eintrinsic .
8. The value of po in silicon at T “ 300K is 2 ˆ 1016 cm´3 . (a) Determine EF ´ Ev . (b) Calculate the value of
Ec ´ EF . (c) What is the value of no ? (d) Determine EF ´ Eintrinsic .
9. Assume that EF “ Ev ` kT {2 at T “ 300K in silicon. Determine no .
10. Consider silicon at T “ 300K in which the hole concentration is po “ 5 ˆ 1019 cm´3 . Determine Ec ´ EF .
11. Consider a germanium semiconductor at T “ 300K. Calculate the thermal equilibrium electron and hole
concentrations for (i) Nc “ 2 ˆ 1015 cm´3 , Nv “ 0, and (ii) Nc “ 1016 cm´3 , Nv “ 7 ˆ 1015 cm´3 .
12. A silicon semiconductor material at T “ 300K is doped with arsenic atoms to a concentration of 2 ˆ 1015 cm´3
and with boron atoms to a concentration of 1.2ˆ1015 cm´3 . (a) Is the material n type or p type? (b) Determine
no and po . (c) Additional boron atoms are to be added such that the hole concentration is 4 ˆ 1015 cm´3 .
What concentration of boron atoms must be added and what is the new value of no ?
13. The thermal equilibrium hole concentration in silicon at T “ 300K is po “ 2 ˆ 1016 cm´3 . Determine the
thermal-equilibrium electron concentration. Is the material n type or p type?
14. In a germanium sample at T “ 250K, it is found that po “ 4no and that Na “ 0. Determine po , no , and Nd .
15. A particular semiconductor material is doped at Nd “ 2 ˆ 1014 cm´3 and Na “ 1.2 ˆ 1014 cm´3 . The thermal
equilibrium electron concentration is found to be no “ 1.1 ˆ 1014 cm´3 . Assuming complete ionization,
determine the intrinsic carrier concentration and the thermal equilibrium hole concentration.
16. Consider germanium with an acceptor concentration of Na “ 1015 cm´3 and a donor concentration of Nd “ 0.
Consider temperatures of T “ 200, 400, and 600K. Calculate the position of the Fermi energy with respect
to the intrinsic Fermi level at these temperatures.
17. Silicon is doped with acceptor impurity atoms at a concentration of Na “ 3ˆ1015 cm´3 . Assume Nd “ 0. Plot
the position of the Fermi energy level with respect to the intrinsic Fermi energy level over the temperature
range of 200 ď T ď 600K.
18. Silicon at T “ 300K contains acceptor atoms at a concentration of Na “ 5ˆ1015 cm´3 . Donor atoms are added
forming an n-type compensated semiconductor such that the Fermi level is 0.215eV below the conduction-band
edge. What concentration of donor atoms are added? 1
19. Determine the position of the Fermi energy level with respect to the intrinsic Fermi level in silicon at T “ 300K
that is doped with boron atoms at a concentration of Na “ 2 ˆ 1016 cm´3 . Also calculate no and po .
20. Determine the values of no and po in GaAs at T “ 300K if EF ´ Ev “ 0.25eV. If the value of po remains
constant, determine the values of EF ´ Ev and no at T “ 400K.

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