EEE / INSTR F244

Microelectronic
Circuits
BITS Pilani Anu Gupta
Pilani Campus
What, why, how, ????

• Why this course?

• Where is the application of this course?

• What are the previous concepts required to understand this?

• What will I learn in this course?

• How to find specifications to design a circuit?

• How to design/ test using EDA tool?

• What is the next course?

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 BITS Pilani
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Need of the course

(Micro) Electronic design

Knowledge of current day technology used in

Industry
• Electron Discovery by English physicist J.J. Thomson of
the electron in 1897.

• Vacuum tube electronics—thermionic emission

• Solid state era -- semiconductor revolution

• Integrated Cicuits– Microelectronics/ integrated circuit/

VLSI technology
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Evolution

• The vacuum tube era – 1906, Triode. Lee Dee

Forest

• Solid state era --Semiconductor revolution----

1947, Shockley, Bardeen, Brattain

• Integrated Circuits– 1959, Jack Kilby, Robert

Noyce

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 Evolution -- Vacuum tube era

• The vacuum tube – 1906, Triode. Lee Dee Forest---

permitted the development of radio broadcasting, long-distance
telephony, television, and the first electronic digital computers.
Vacuum tubes are fragile and ultimately wear out in service.

Failure occurs in normal usage either from the effects of repeated

heating and cooling as equipment is switched on and off (thermal
fatigue)
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Evolution– Solid state era

• Solid state era --Semiconductor revolution----1947,

Shockely, Bardeen, Brattain-- .

Series of new devices ,

• less expensive,

• did not burn out in service, and

• were much smaller and more reliable.

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 Evolution—IC Technology

• Integrated Circuits– 1959, Jack Kilby, Robert

Noyce– the fulfilled need for

• compact, reliable, high-speed, lightweight

electronic

• Defense -- missile guidance systems, led to

the invention of the integrated circuit (IC)
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VLSI TECH.----Intel 4004—first
microprocessor
In Nov. 1971, the Intel 4004 was introduced

This revolutionary microprocessor, measuring

—the size of a finger nail

—having 2,300 transistors with

---10 microns channel length

---delivered the same computing power as the first electronic

computer, the ENIAC*, built in 1946, which filled an entire
room and used 18,000 vacuum tubes.
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 Intel 4004 (1971)
Max. CPU clock rate: 740-750 kHz
Transistors: : 2,250;
Min. feature size: 10 µm
Instruction set: 4-bit BCD oriented
Address width: 12 (multiplexed)
Data width: 4 bits
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 Moore’s law
The law is named after Intel co-founder Gordon E. Moore, who
described the trend in his 1965 paper

The paper noted that number of components in integrated

circuits had doubled every year from the invention of the
integrated circuit in 1958 until 1965 and predicted that the
trend would continue "for at least ten years".[10]

His prediction has proved to be uncannily accurate, in part

because the law is now used in the semiconductor industry to
guide long-term planning and to set targets for research and
development.
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Moore’s law—driving force
The number of transistors per square inch on
integrated circuits doubles every year (18
months)

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IC TECH--- GROWTH OF INTEGRATION
per chip (Moore’s Law)

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(Moore’s Law)—beyond 2010

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BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956
 BITS Pilani
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Analog Domain Electronics –

Signal processing, continuous time signal
Analog Operations

• Amplification
• Oscillator , Waveform generation
• Rectification
• Clipping, clamping
• Filter
• Modulation/ demodulation
• Sampling, ADC/ DAC
• Arithmetic operations—addition/ subtraction/ multiplication/
division
• Etc………
OPERATIONAL AMPLIFIER
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OPAMP circuits
Mixed-signal System design

Example

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ADC- Sub System Design

A to D Converter, D to A Converter

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Specifications—
Ex--Flash ADC- 10 MSPS,

Total time-100nS

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 BITS Pilani
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Response time
Testing
 Why unit step response used
for settling time estimation?
We get to test both the low frequency as well as the high
frequency response of a system in one go.

High frequency----The unit step function makes a step, pretty

fast change from 0 to 1 in theoretically no time, practically a
very short time. Hence, the high frequency part of the input
itself to assess the high frequency response of the system
under test.

Low frequency---It maintains a constant amplitude over long

time, giving the low frequency component of itself to find out
the low frequency response of the system under test.
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Time domain response
Sag/ Tilt, & Rise time

• sag or tilt related to the low-frequency part

• the rise time of the system related to the high-
frequency component of the unit step signal.
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Step response---Settling time
40 nS- settling time 5τ = 40 ns  τ= 8nS

How the system responds to a sudden input is important because large and
possibly fast deviations from the long term steady state may have extreme
effects on the components and the overall system response dependent on this
component.

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Frequency domain response
Band width requirement of OPAMP

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BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956
OPAMP Design blocks
Goal of this course

Circuit choice , DC biasing, high gain, PVT invariant, negative feedback,

frequency compensation, noise reduction

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DAC

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Opamp
Filter, oscillator, modulator, rectifier

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 Prerequisite of course

• Electronic device/ Solid state device/ Microelectronic

devices– PN Diode, BJT, MOSFET

• Electrical science/ Basic electronics/ Network Analysis— KCL/ KVL, STEP

RESPONSE, SINUSOIDAL ANALYSIS,THEOREMS---- Thevenin , Norton,

Maximum power transfer, Reciprocity, Millman

• Signal & System-----Fourier/ Laplace transforms, Stability

condition

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Network theorems –in
electrical engineering
• Super Position Theorem. ...
• Thevenin's Theorem. ...
• Norton's Theorem. ...
• Maximum Power Transfer Theorem. ...
• Reciprocity Theorem. ...
• Compensation Theorem. ...
• Millman's Theorem. ...
• Tellegen's theorem.

Electric circuit theorems are beneficial to help find voltage

and currents in multi loop circuits.

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Sequel of course

• Analog & Digital VLSI design

• Analog Electronics

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 BITS Pilani
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Course Handout
 BITS Pilani
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END
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Revision of sinusoidal signal power

concepts
Revision of sinusoidal signal power
concepts

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Power delivered to capacitive load for AC input

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 BITS Pilani
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Revision –RC circuits, Power delivered to

resistor/ capacitor, circuit theorems
 second term is a time
constant varying sinusoid

Real Power

Electrical Power in a Pure Resistor

V, I in same phase
AC Power in a Purely
Capacitive Circuit
Real Power = 0 as θ=0
Reactive Power in a Pure Capacitor, purely capacitive circuit,
the phase angle θ = -90o
Where –V*I*sin(θ) is a negative sine wave. Also the symbol for
capacitive reactive power is QC with the same unit of measure, the volt-
ampere reactive (VAR) as that of the inductor. Then we can see that
just like a purely inductive circuit above, a pure capacitor does not
consume or dissipate any real or true power, P.
Reactive Power”, (Q)
volt-amperes reactive, (VAr)

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 BITS Pilani
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Devices –BJT / MOSFET

 BJT
• The bipolar junction transistor, unlike other transistors, is
usually not a symmetrical device. This means that
interchanging the collector and the emitter makes the transistor
leave the forward active mode and start to operate in reverse
mode.
• Because the transistor's internal structure is usually optimized
for forward-mode operation, interchanging the collector and the
emitter makes the values of α and β in reverse operation much
smaller than those in forward operation; often the α of the
reverse mode is lower than 0.5.
• The lack of symmetry is primarily due to the doping ratios of the
emitter and the collector.

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• The emitter is heavily doped, while the collector is lightly doped,
allowing a large reverse bias voltage to be applied before the
collector–base junction breaks down.
• The collector–base junction is reverse biased in normal
operation. The reason the emitter is heavily doped is to
increase the emitter injection efficiency: the ratio of carriers
injected by the emitter to those injected by the base. For high
current gain, most of the carriers injected into the emitter–base
junction must come from the emitter.
• The low-performance "lateral" bipolar transistors sometimes
used in CMOS processes are sometimes designed
symmetrically, that is, with no difference between forward and
backward operation.
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 Collector terminal
• The area of collector layer is largest. So it can dissipate
heat quickly. IT is normally in direct contact with the metal
case of the transistor, or a metal mounting pad, which may
then be bolted or clipped directly on to a heat-sink.

• The collector needs to be lightly doped so that the

collector-base junction will have a high breakdown voltage.
This translates into a high allowable collector power supply
voltage. Small signal silicon transistors have a 60-80 V
breakdown voltage. Though, it may run to hundreds of
volts for high voltage transistors.
• The collector also needs to be heavily doped to minimize ohmic

losses if the transistor must handle high current. These

contradicting requirements are met by doping the collector

more heavily at the metallic contact area. The collector near the

base is lightly doped as compared with the emitter.

• The heavy doping in the emitter gives the emitter-base a low

approximate 7 V breakdown voltage in small signal transistors.

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END

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