CCE201: Solid State Electronic Devices

Lecture 01:
Course Introduction
P R E PA RED BY
DR . E N G . S HE R IF HE K A L
A S S ISTANT P ROF ESSOR, CCE DE PA RTMENT

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 Course Information
Course Name: Solid State Electronic Devices
Course Code: CCE201
Course Materials are on my website and Microsoft Team:
https://www.bu.edu.eg/staff/sherifsalah3-courses
https://fengbuedu.sharepoint.com/:f:/r/sites/CCE201Solidstateelectronicdevices/
Shared%20Documents/General?csf=1&web=1&e=mKhYl8

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Contact me
 Dr. Sherif Hekal

 Room number : NP411

 Email address:

[email protected]

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My rules
 No eating

 No drinking

 Silence except for asking questions

 Shutdown your Mobile, Tablet, etc. and put in your pocket.

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CCE201: Course Info
Course Title Solid State Electronic Devices
Course Code CCE201
Credit Hours 3
Contact Hours Lecture 2 Tutorials 2 Lab. -

Prerequisite(s) EMP104
Basics of semiconductor physics – Fermi-Dirac distribution – Carriers concentrations –
Topics Intrinsic and Extrinsic materials – Charge neutrality – Currents in Semiconductors
(drift current – diffusion current) – Semiconductor parameters (mobility, Scattering,
lifetime) – Hall effect. – PN junction theory – Diode IV characteristics – large and small
analysis – Analog and digital diode applications (Rectifiers, Clipping circuits, Clamping
Circuits, multipliers) – Special purpose diodes (Light emitting diodes, photo diodes,
Zener diode and its applications)– Basics of Bipolar junction transistors (BJT) and field
effect transistors (FET) – physical operations, characteristics, specifications.

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CCE2015
Course Assessment
Assessment Type Percentage Time

Midterm1 30% Week 07

Midterm2 20% Week 12
Attendance, Assignments 10%
Final Exam 40% Week 16
Total mark 100%

Conditions of the success are:

1- getting 60% of the total mark.
2- getting at least 30% of the full mark of the final exam.

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Course Assessment
Percentage Grade Points
Score ≥ 97% A+ 4
93% ≤ Score < 97% A 4
89% ≤ Score < 93% A- 3.7
84% ≤ Score < 89% B+ 3.3
80% ≤ Score < 84% B 3
76% ≤ Score < 80% B- 2.7
73% ≤ Score < 76% C+ 2.3
70% ≤ Score < 73% C 2
67% ≤ Score < 70% C- 1.7
64% ≤ Score < 67% D+ 1.3
60% ≤ Score < 64% D 1
Score < 60% F 0

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Syllabus
Week# Topics
1 Course Introduction
2 Semiconductor Physics
3 Intrinsic & Extrinsic Semiconductors
4 Carrier Transfer
5 PN-junction
6 Diodes and their applications
7 Midterm 1
8 Special purpose diodes
9 Bipolar junction transistor (BJT) I
10 Bipolar junction transistor (BJT) II
11 Midterm 2
12 FET transistor I
13 FET transistor II
14 Revision

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 Books & References
Text Book
- Microelectronic circuits Textbook by Adel Sedra and Kenneth C. Smith.
- S. M. Sze (2001). Semiconductor Devices: Physics and Technology, Wiley & So., ISBN 0471333727.

Recommended references supporting the course

 B. Streetman, S. Banerjee (1999).Solid State Electronic Devices, Prentice Hall, ISBN 0130255386.
 Robert L. Boylestad, Louis Nashelsky, (2013) Electronic devices and circuit theory, 11th edition, Pearson
Education.
 Neamen D.A., (2007), Microelectronics Circuit Analysis and Design, McGraw Hill.

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Simulators
 Proteus
 OrCAD
 SPICE
 Online simulator
http://www.falstad.com/circuit/index.html

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ILOS
Theory
Analysis
Simulation
Implementation

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ILOS
Upon successful completion of the course, students will be able to:
Acquire some understanding in the fundamental electric and electronics principles.
Describe the operation and i-v characteristics of diodes and transistors.
Solve basic problems in electronic circuits.
Implement different applications using basic electronic devices (diodes and transistors).
Read and understand the datasheets of diodes and transistors to use the suitable parts in
design.
Design and analyze electronic circuits use computer packages (simulators).
Acquire better skills in performing the laboratory experiments.
Work as a team in laboratory sessions.

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Course Objectives
 Identify and describe operation of semiconductor devices through understanding of the
semiconductor physics.
 Develop an understanding of the PN junction diode and its behavior.
 Develop an ability to analyze diode circuits and examine additional applications of the diode.
 Develop an understanding of the Bipolar Junction Transistor (BJT) and its operation.
 Identify and describe the different BJT configurations, DC biasing, and AC analysis.
 Develop an understanding of the Field Effect Transistor (FET) and its operation.
 Identify and describe the different FET configurations, DC biasing, and AC analysis.
 Develop an ability to analyze and design BJT and FET circuits.

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Course Objectives

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Course Objectives

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Course Objectives

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Course Objectives

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Example of Questions

 State two (2) differences between FET and BJT – LEVEL 1

 Explain how depletion region is created in a pn junction? – LEVEL 2

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Example of Questions

 Sketch the output voltage, VO if the input signal, Vi is a 12 V peak-to-peak square wave –
LEVEL 3

 Analyze the circuit below to calculate the base, collector and emitter currents – LEVEL 4

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Example of Questions
Compare the two characteristics for a conventional pn-junction diode and a Zener diode – LEVEL
4/5

Evaluate the circuit below to determine whether the BJT is in cut-off, active or saturation mode
– LEVEL 5

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Example of Questions
 Design an n-channel MOSFET circuit is as shown in the figure - LEVEL 6

NOTE:
A DESIGN question generally means that you are required to
calculate the values of the resistors.

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