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    Isc N-Channel MOSFET Transistor 65N06: Features

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    bierny1985pawel
    This document provides specifications for an N-Channel MOSFET transistor. It lists maximum ratings, thermal characteristics, and electrical characteristics such as drain current, drain-source voltage, and on-resistance.

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    Isc N-Channel MOSFET Transistor 65N06: Features

    Uploaded by

    bierny1985pawel
    14 views2 pages
    This document provides specifications for an N-Channel MOSFET transistor. It lists maximum ratings, thermal characteristics, and electrical characteristics such as drain current, drain-source voltage, and on-resistance.

    Original Title

    65n06

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    This document provides specifications for an N-Channel MOSFET transistor. It lists maximum ratings, thermal characteristics, and electrical characteristics such as drain current, drain-source voltage, and on-resistance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views2 pages

    Isc N-Channel MOSFET Transistor 65N06: Features

    Uploaded by

    bierny1985pawel
    This document provides specifications for an N-Channel MOSFET transistor. It lists maximum ratings, thermal characteristics, and electrical characteristics such as drain current, drain-source voltage, and on-resistance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    isc N-Channel MOSFET Transistor 65N06

    FEATURES
    ·Drain Current –ID=63A@ TC=25℃
    ·Drain Source Voltage-
    : VDSS= 60V(Min)
    ·Static Drain-Source On-Resistance
    : RDS(on) = 0.018Ω(Max)
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    DESCRIPTION
    ·Designed for low voltage, high speed switching applications in
    power supplies, converters and power motor controls.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 60 V

    VGS Gate-Source Voltage-Continuous ±20 V

    ID Drain Current-Continuous 63 A

    IDM Drain Current-Single Plused 240 A

    PD Total Dissipation @TC=25℃ 150 W

    TJ Max. Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -55~175 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 1.05 ℃/W

    Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

    isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc N-Channel MOSFET Transistor 65N06

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 25A 0.018 Ω

    IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

    IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS=0 5 μA

    VSD Forward On-Voltage IS= 25A; VGS=0 1.2 V

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark

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