JIEJIE MICROELECTRONICS CO., LTD.

JST16B-800BW-US 16A TRIAC Rev.A1-1

DESCRIPTION:
The JST16B-800BW-US triac is suitable for general purpose AC
switching. It can be used as an ON/OFF function in applications
such as heating regulation, induction motor starting circuits, for
phase control operation in light dimmers, motor speed controllers.
JST16B-800BW-US snubberless triac is especially recommended
for use on inductive loads. From T2 terminals to external heatsink.
Package TO-220B is RoHS compliant.

MAIN FEATURES
Symbol Value Unit
IT(RMS) 16 A
VDRM /VRRM 800 V
IGTⅠ/Ⅱ/Ⅲ 50/50/50 mA

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40-150 ℃
Operating junction temperature range Tj -40-125 ℃
Repetitive peak off-state voltage (Tj=25℃) VDRM 800 V
Repetitive peak reverse voltage (Tj=25℃) VRRM 800 V
RMS on-state current (TC≤100℃) IT(RMS) 16 A
Non repetitive surge peak on-state current
160
(full cycle , tp=20ms , Tj=25℃)
ITSM A
Non repetitive surge peak on-state current
176
(full cycle , tp=16.6ms , Tj=25℃)
I2t value for fusing (tp=10ms , Tj=25℃) I2t 128 A2s
Critical rate of rise of on-state current
dI/dt 100 A/μs
(IG=2×IGT , f=100Hz , Tj=125℃)
Peak gate current (tp=20μs , Tj=125℃) IGM 4 A
Average gate power dissipation (Tj=125℃) PG(AV) 0.5 W
Peak gate power PGM 10 W

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JST16B-800BW-US JieJie Microelectronics Co., Ltd.
Peak pulse voltage
Vpp 4 kV
(Tj=25℃; non-repetitive,off-state;FIG.7)

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Symbol Test Condition Quadrant Value Unit
IGT Ⅰ-Ⅱ-Ⅲ MAX. 50 mA
VD =12V RL =33Ω
VGT Ⅰ-Ⅱ-Ⅲ MAX. 1 V
VD =VDRM Tj =125℃
VGD Ⅰ-Ⅱ-Ⅲ MIN. 0.2 V
RL =3.3KΩ
Ⅰ-Ⅲ 70
IL IG =1.2IGT MAX. mA
Ⅱ 80
IH IT =500mA MAX. 50 mA
dV/dt VD=540V Gate Open Tj =125℃ MIN. 1500 V/μs
(dI/dt)c (dV/dt)c=20V/μs Tj=125℃ MIN. 18 A/ms
ton IG=80mA IA=200mA IR=20mA 10
TYP. μs
toff Tj=25℃ 70

STATIC CHARACTERISTICS
Symbol Parameter Value(MAX.) Unit
VTM ITM =22.5A tp=380μs Tj=25℃ 1.5 V
VTO Threshold voltage Tj=125℃ 0.77 V
RD Dynamic resistance Tj=125℃ 30 mΩ
IDRM Tj=25℃ 5 μA
VD =VDRM VR =VRRM
IRRM Tj=125℃ 0.5 mA

THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c) junction to case (AC) 1.1 ℃/W
Rth(j-a) junction to ambient (AC) 60 ℃/W

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JST16B-800BW-US JieJie Microelectronics Co., Ltd.

ORDERING INFORMATION

J ST 16 B -800 BW -US
JieJie Microelectronics Co., Ltd.
Triacs
IT(RMS):16A Customer code

BW:IGT1-3≤50mA
B:TO-220B
800:VDRM /VRRM≥800V

MARKING

JST16B
800BW-US XXX XXX
XXX XXX
Year Production
Month Code

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JST16B-800BW-US JieJie Microelectronics Co., Ltd.
FIG.1 Maximum power dissipation versus RMS FIG.2: RMS on-state current versus case
on-state current temperature
P(W) I T(RMS)(A)
30 20
18
25 16 100℃

14
20
12
15 10
8
10 6
4
5
2
0 0
0 5 10 (A)
I T(RMS) 15 20 0 25 50 75 100 125
TC(℃)

FIG.3: Surge peak on-state current versus FIG.4: On-state characteristics

number of cycles
ITSM(A) I TM(A)
180
Tc=25℃,tp=20ms,one cycle,sine Tj=25℃ typ
160 100 Tj=25℃ max
140 Tj=125℃ typ
120
100
80 10
60
40
20
0 1
1.E+0 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 0 0.5 1 1.5 2 2.5 3 3.5
Number of cycles VTM(V)

FIG.5: Non-repetitive surge peak on-state current FIG.6: Relative variations of gate trigger
for a sinusoidal pulse with width tp<20ms, and current, holding current and latching
corresponding value of I2t (dI/dt<100A/μs) current versus junction temperature
I TSM(A), I 2t(A2s) I GT,I H,IL(Tj)/IGT,IH,IL(Tj=25℃)
3
IGT(I/II)&IH
1000 IGT(III)
I TSM 2.5
dI/dt IL

2
100
I 2t
1.5

1
10

0.5

1 0
0.01 0.1 1 10 -40 -20 0 20 40 60 80 100 120 140
tp (ms) Tj(℃)

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JST16B-800BW-US JieJie Microelectronics Co., Ltd.
FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards

IEC61000-4-5 Standards
Surge Generator
1.2/50μS voltage surge
8/20μS current surge

RGen
2Ω
Filtering Unit Load Model

R L

2Ω 6.5μH

AC
INPUT RG 300Ω

SHAPING AND SOLDERING PARAMETERS

Refer to《Instructions for installation of plastic-sealed in-line power devices》released by JieJie

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JST16B-800BW-US JieJie Microelectronics Co., Ltd.

ORDERING INFORMATION
IGT(mA)
Voltage Base qty. Delivery
Order code Package
VDRM/VRRM (V) (pcs) mode
Ⅰ-Ⅱ-Ⅲ

JST16B-800BW-US 800 50 TO-220B 50 Tube

Document Revision History

Date Revision Changes
May.15, 2023 A1-1 Last updated

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JST16B-800BW-US JieJie Microelectronics Co., Ltd.

PACKAGE MECHANICAL DATA

Dimensions
Ref. Millimeters Inches
m
.8 5m Min. Typ. Max. Min. Typ. Max.
3
5- A 4.40 4.60 0.173 0.181
3.6
E A
Φ C2 B 0.61 0.88 0.024 0.035
C 0.46 0.70 0.018 0.028
C2 1.21 1.32 0.048 0.052

F
L3

C3 2.40 2.72 0.094 0.107

V1
D 8.60 9.70 0.339 0.382
D

E 9.60 10.4 0.378 0.409

H

C3 F 6.20 6.60 0.244 0.260

L1

L2 G 2.40 2.70 0.094 0.106

H 28.0 29.8 1.102 1.173
L1 3.50 4.10 0.138 0.161
B L2 1.14 1.70 0.045 0.067
G C
L3 2.65 2.95 0.104 0.116
V1 45° 45°

DELIVERY MODE

ＣＨＮ

TUBE INNER BOX

PACKAGE OUTLINE PER CARTON
(PCS) (PCS)

TO-220B TUBE 50 1,000 5,000

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JST16B-800BW-US JieJie Microelectronics Co., Ltd.

Information furnished in this document is believed to be accurate and reliable. However,

Jiangsu JieJie Microelectronics Co., Ltd. assumes no responsibility for the consequences
of use without consideration for such information nor use beyond it. Information mentioned
in this document is subject to change without notice, apart from that when an agreement is
signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information. This document supersedes
and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co., Ltd.
Copyright ©2023 Jiangsu JieJie Microelectronics Co., Ltd. All rights reserved.
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