On-chip decoupling capacitors are widely used in today's high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network.
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On-Chip Decoupling Capacitor Optimization For Noise and Leakage Reduction
On-chip decoupling capacitors are widely used in today's high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network.
On-chip decoupling capacitors are widely used in today's high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network.
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On-Chip Decoupling Capacitor Optimization For Noise and Leakage Reduction
On-chip decoupling capacitors are widely used in today's high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network.
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On-Chip Decoupling Capacitor Optimization for Noise and Leakage Reduction
Howard H. Chen, J. Scott Neely, Michael F. Wang, and Gricell Co
IBM Corporation 1101 Kitchawan Road, Yorktown Heights, New York, U.S.A. Abstract The on-chip decoupling capacitors are widely used in todays high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology, however, also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network, and the optimization of the placement of thin- oxide and thick-oxide capacitors to reduce the tunneling current, leakage power, and burn-in cost, while limiting the power supply noise within noise margin.
1. Introduction
During the past Iour decades, the semiconductor industry has Iollowed the Moore`s Law by doubling the perIormance and Iunctionality per chip every technology node |1|. However, with the channel length oI MOSFET expected to reach 9 nm by 2016 (Table 1), the continued scaling oI CMOS devices seems to have approached its physical limit.
The advent oI nanotechnology not only aggravates the power supply noise problem with lower supply voltage and smaller noise margin (10 oI Vdd), but also signiIicantly increases gate leakage due to the thinner gate dielectric that must be scaled with the gate length to Iully realize perIormance gains |2|. The power supply noise (V) is caused by the impedance (Z) oI the power supply network and the current (I) that Ilows through the power supply lines. Figure 1 shows an example oI the current spikes in the power supply network and the corresponding power supply voltage Iluctuation during steady state Irom one oI our microprocessor circuits. In order to accurately simulate the power supply noise, we need to take into account not only the IR drop due to wire resistance (R) in the power supply network, but also the LI/t noise that results Irom the inductance (L) oI the power supply network and the switching activities oI the circuit (I/t). Figure 2 illustrates the dramatic eIIect oI LI/t noise on the transient power supply voltage Irom our simulation, when the circuits are in transition Irom idle power to maximum average power. It also shows why a traditional static IR drop analysis that does not consider the dynamic eIIect oI switching activities cannot be used to estimate the total power supply noise that is best represented by VIR LI/t.
Figure 1. Steady-state Vdd and current waveform
The power supply voltage drop may result in Ialse logic switching iI the noise exceeds the threshold voltage during steady state. It will also aIIect the timing closure iI the noise introduces additional delay during transient state. Since the device current is proportional to (Vdd- Vt) K , where Vt is the threshold voltage and k is a super- linear parameter between 1 and 2, a 10 Vdd noise may have a 15 impact on circuit perIormance iI k is equal to Proceedings of the 16th Symposium on Integrated Circuits and Systems Design (SBCCI03) 0-7695-2009-X/03 $17.00 2003 IEEE 1.5. As the power supply voltage continues to scale down in Iuture technologies, the power supply noise will have an increasingly signiIicant impact on device current and circuit perIormance (Iigure 3).
Figure 2. Transient Vdd and current waveform
0% 5% 10% 15% 20% 25% 30% 35% 0.8 1 1.2 1.5 1.8 2.5 Nominal Vdd (volts) P e r f o r m a n c e
v a r i a t i o n 100mV noise 200mV noise Figure 3. Performance impact from Vdd noise
To reduce the power supply Iluctuation, decoupling capacitors |3| are oIten used to support the large current transients generated by the simultaneous switching oI on- chip circuits and oII-chip drivers. By charging up during the steady state, the decoupling capacitors can assume the role oI power supply and provide the current needed during switching. In a simpliIied circuit model, the electric charge beIore switching can be represented by C d Vdd, where C d is the decoupling capacitance and Vdd is the nominal power supply voltage. The electric charge aIter switching can be represented by (C d C s )(Vdd V), where C s is the switching capacitance, and V is the power supply voltage Iluctuation. From the conservation oI charge, where C d Vdd (C d C s )(Vdd V), we can easily derive the upper bound on transient power supply voltage Iluctuation V -VddC s / (C d C s ). To limit V within 10 oI Vdd and prevent the decoupling capacitors Irom being signiIicantly discharged during circuit switching, a conservative value oI 5 to 9 times the switching capacitance is oIten used as the guideline Ior decoupling capacitance. The proper amount oI decoupling capacitance should also be careIully selected, so as not to generate a resonant Irequency ) 2 /( 1 LC f = near the operating Irequency, which will signiIicantly increase the impedance and power supply noise. Ironically, the parasitic resistance that causes IR drop and latch-up problems can help to resolve the resonance problem by introducing a damping eIIect and reducing the resonance impedance ZL/(RC) |4|. Depending on the locations oI the decoupling capacitors, on-chip decoupling capacitors are eIIective in reducing the high-Irequency noise, while oII-chip decoupling capacitors are eIIective in reducing the low- Irequency noise. The on-chip decoupling capacitors include the intrinsic decoupling capacitors such as the n- well capacitors Ior bulk CMOS devices, the non-switching circuit capacitors, and the wiring capacitors between Vdd and Gnd. Additional decoupling capacitors such as the gate-oxide capacitors (Iigure 4) and trench capacitors can also be added to minimize the power supply noise.
Figure 4. Gate-oxide decoupling capacitor
The gate-oxide capacitor has a capacitance per unit area oI C ox
ox /t ox , where ox and t ox are the dielectric constant and the thickness oI the oxide respectively. In order Ior the gate to retain more control over the channel than the drain, the gate oxide thickness must be scaled proportionally to the channel length. Thin oxide provides more capacitance per unit area than thick oxide. However, the thinner the oxide, the higher the electric Iield across the gate and the higher the leakage current that may lead to an oxide breakdown. Table I shows that an oxide thickness oI 9 provides 44 more capacitance than an oxide thickness oI 13, but its gate leakage will increase by an order oI magnitude. Furthermore, an oxide thickness oI less than 10 has only a Iew layers oI atoms and is subject to quantum-mechanical tunneling that exponentially increases the gate leakage current. In order to extend the battery liIe oI portable devices and other low-power application, it is absolutely necessary to control the gate leakage current, as well as the sub- threshold and junction leakage current. Device Proceedings of the 16th Symposium on Integrated Circuits and Systems Design (SBCCI03) 0-7695-2009-X/03 $17.00 2003 IEEE perIormance can only be maximized aIter the low leakage current requirement is met. Alternate gate dielectric material with a higher dielectric constant (high ) may also be needed to control the increasing gate leakage current and satisIy the requirements oI low power logic. For a gate dielectric oI thickness T d and relative dielectric constant , the equivalent oxide thickness in Table 1 is equal to T d / (/3.9), where 3.9 is the relative dielectric constant oI silicon dioxide.
2. Power supply distribution model
To address the deIiciency oI a static IR drop analysis and prevent any potential chip Iailure due to the collapse oI power rails, we have developed a complete power supply noise model that includes both the package model and the on-chip power bus model to simultaneously simulate the inductive LI/t noise and the resistive IR drop (Iigure 5).
Figure 5. Power supply distribution model
In order to reduce the complexity oI a Iull-chip power supply noise analysis, a hierarchical approach is used to build the chip and package power distribution model. At the package level, a coarse-grid birthday-cake model |5| is generated to represent the equivalent inductance between adjacent regions on a single-chip or multi-chip module package. At the chip level, a Iine-grid model with C4 pitch is used to represent the multilayer RLC power bus network. More importantly, in order to ensure the accuracy oI a Iull-chip power supply noise analysis, we employ a state- oI-the-art switching-circuit model |6| that truly captures the dynamic eIIect oI transient current. Based on the circuit simulation results oI our common power analysis methodology |7|, we model the switching activities oI each Iunctional unit with a piecewise linear current source that mimics the switching pattern and current signature oI the real circuits. For example, iI the circuits operate with a certain power level such as hold power, maximum average power, clock-gated hold power, or clock-gated maximum average power, within a given cycle, then the waveIorm that best represents the current switching condition in one oI the several possible states will be selected. As the circuits switch Irom one state to another state, the waveIorm will change accordingly Irom cycle to cycle to Iacilitate a vector-based dynamic power supply noise analysis. Figure 6 illustrates one example that produces the worst-case scenario when all the circuits are switching between hold power and maximum average power at resonant Irequency. To prevent excessive Vdd noise due to circuit resonance, we have to make certain in our power-aware design methodology that the clock and power supply are not gated at or near the resonant Irequency. We also need to optimize the placement oI decoupling capacitors to mitigate the power supply noise.
Figure 6. Resonant power supply voltage
It is worth noting the important role that timing plays in the noise analysis, as the noise doubles iI two identical drivers switch at the same time, and the noise can be reduced by halI iI the same two drivers switch at diIIerent times. ThereIore, in areas where hundreds oI drivers are located, it is critical to properly model the switching Iactor and signal delay oI each circuit, to minimize the compounding eIIect oI noises that may be erroneously superimposed. Finally, we need to model the intrinsic decoupling capacitors and additional decoupling capacitors with their respective time constants. The potential candidates Ior intrinsic decoupling capacitors include the device and junction capacitors that are connected between Vdd and Gnd. For a simple inverter buIIer, about oI the gate capacitance, oI the diIIusion capacitance, and / oI the gate-to-diIIusion capacitance contribute to the intrinsic decoupling capacitance. Since only the circuits that are not switching can provide decoupling capacitance, the non-switching device capacitance is calculated by subtracting the switching capacitance Irom the total device capacitance. The switching capacitance Irom clock circuits which charge and discharge at the Irequency oI f cycles per second can be calculated Irom C=P/V 2 f, where P is the power dissipation and V is the power supply voltage. The switching capacitance Ior logic circuits which usually Proceedings of the 16th Symposium on Integrated Circuits and Systems Design (SBCCI03) 0-7695-2009-X/03 $17.00 2003 IEEE charges and discharges in alternating cycles can be calculated Irom C=2P/V 2 f |8|.
3. Optimization of decoupling capacitors
Based on the Iloor plan oI the chip, we can connect the switching circuit models to the corresponding points in the chip and package power-supply distribution model, and perIorm a Iull-chip power-supply noise analysis to estimate the steady-state and transient noise, and optimize the placement oI decoupling capacitors. Both the thin- oxide and thick-oxide decoupling capacitors are available as options to reduce the noise and leakage. The thin- oxide decoupling capacitors are selectively placed in noisy hot spots due to their eIIectiveness in reducing the power supply noise. The thick-oxide decoupling capacitors, on the other hand, are placed in other areas that are less noisy to reduce the gate leakage. The optimization oI the placement oI thin-oxide and thick-oxide decoupling capacitors involves an iterative process that is bounded by one initial simulation with 100 thin-oxide usage and another simulation with 100 thick-oxide usage Ior a given placement oI decoupling capacitors. II the simulation result Irom 100 thin-oxide usage shows excessive noise that exceeds the noise margin, more thin-oxide decoupling capacitors must be added in the hot spots until the noise is contained. On the other hand, iI the simulation result Irom 100 thick-oxide usage does not show any noise violations, unnecessary decoupling capacitors can be removed Irom the non- critical area to Iurther reduce the leakage. For a given placement oI decoupling capacitors, iI the simulation result Irom 100 thin-oxide usage shows noise containment, but the simulation result Irom 100 thick- oxide usage shows noise violation, ensuing optimization will continue until the proper distribution oI thin-oxide usage and thick-oxide usage is determined. Depending on the manuIacturing technology and perIormance target, the usage oI thin-oxide and thick-oxide decoupling capacitors can be optimized to minimize the noise, subject to leakage constraints. It can also be optimized to minimize the leakage, subject to noise constraints. In practical applications, it may not be necessary to simultaneously minimize the noise and leakage with sophisticated sensitivity analysis, because desirable results can oIten be achieved by Iollowing the simple procedure below. 1. Add decoupling capacitors to each Iunctional unit, such that the total amount oI decoupling capacitance is about 5 to 9 times the switching capacitance. 2. II the objective is to minimize leakage, subject to noise constraints, add thin-oxide decoupling capacitors to all available space on the chip. II the noise still exceeds the noise margin, add more decoupling capacitors at hot spots or change circuit layout as necessary. II the noise is contained, gradually replace thin-oxide capacitors with thick- oxide capacitors in noncritical area to reduce leakage, until the noise can no longer be contained. 3. II the objective is to minimize noise, subject to leakage constraints, add thick-oxide decoupling capacitors to all available space on the chip. Gradually replace thick-oxide capacitors with thin- oxide capacitors near hot spots to reduce noise, until the maximum leakage power limit is reached.
4. Benchmark analysis
To balance and optimize the use oI thin oxide and thick oxide decoupling capacitors, we analyzed a benchmark microprocessor with seven diIIerent conIigurations, where the thin-oxide area ranges Irom 0 to 17 mm 2 , and the thin- oxide capacitance ranges Irom 0 to 230 nF. The amount oI thin-oxide and thick-oxide decoupling capacitance used in each conIiguration is shown in Iigure 7, with conIiguration A representing 100 thin oxide usage and conIiguration G representing 100 thick oxide usage. 0 50 100 150 200 250 A B C D E F G C a p a c i t a n c e
( n F ) Thin Oxide Thick Oxide
Figure 7. Thin-oxide decoupling capacitor usage
To simulate the general circuits with both linear and nonlinear elements, we use ACES |9| to measure the thermal power and the power supply current oI each Iunctional unit. Based on the current signatures in diIIerent states, circuit switching activities are modeled as a piecewise linear current source, and multi-cycle transient noise simulation can be perIormed by using the linear periodic Iunction oI time in PowerSPICE |10|. AIter extensive analysis oI the power supply noise Ior each decoupling capacitor conIiguration (Table 2), conIiguration F is selected as the Iinal conIiguration that limits the thin-oxide area to 6.7 mm 2 with a balanced use oI thin-oxide and thick-oxide decoupling capacitors, while suppressing the worst-case transient power supply noise within the 200 mV noise margin. Our leading-edge technology enables us to analyze transient power supply Proceedings of the 16th Symposium on Integrated Circuits and Systems Design (SBCCI03) 0-7695-2009-X/03 $17.00 2003 IEEE noise under diIIerent scenarios such as power ramp-up and power ramp-down. It also allows us to evaluate the noise impact Irom various power-saving techniques such as clock gating and Vdd gating when the clocks or the power supplies to the logic blocks are cut oII during the sleep mode. The gate leakage power is reduced by 61 aIter the area oI thin-oxide decoupling capacitors decreases Irom 17.8 mm 2 to 6.7 mm 2 . The optimal use oI thin-oxide decoupling capacitors in the hot spots and thick-oxide decoupling capacitors in the cool spots contributes about 20 power saving under the maximum operating Irequency oI 1.8 GHz, and 30 power saving under the burn-in supply voltage oI 1.8V and burn-in temperature oI 140C.
Table 2. Power supply noise comparison
Decoupling Capacitors Thin-oxide Area (mm 2 ) Transient Noise (mV) Leakage Power (W) A 17.8 191 26 B 16.7 191 25 C 13.3 193 20 D 12.2 193 18 E 8.1 197 12 F 6.7 198 10 G 0.0 232 0
5. Conclusion
A Iull-chip power supply noise analysis methodology has been developed to optimize the placement oI on-chip decoupling capacitors Ior simultaneous noise and leakage reduction. In our current technology, the thin-oxide decoupling capacitors can provide 70 more capacitance per unit area than the thick-oxide decoupling capacitors, but the use oI thin-oxide decoupling capacitors also generates more than 10 Iolds the leakage current than the thick-oxide decoupling capacitors. Without an optimal decoupling capacitor placement strategy in place, designers will have to adopt a conservative approach by populating the chip with the thick-oxide decoupling capacitors only to prevent a catastrophic increase oI tunneling current, leakage power, and burn-in cost. The noise and leakage reduction achieved in our benchmark analysis demonstrates the eIIectiveness oI our decoupling capacitor optimization procedure, which selectively places the thin-oxide decoupling capacitors in critical hot spots only. As the leakage and noise problems continue to grow, due to the thinner oxide, smaller noise margin, and larger transient current, the control oI power supply noise and the optimization oI decoupling capacitor usage will become one oI the most signiIicant challenges Ior 90nm system-on-chip designs and beyond.
6. Acknowledgement
The authors would like to thank Erwin Cohen, Antje Mueller, RolI HilgendorI, Joachim Clabes, Robert Dennard, Mike Carlson, David Appenzeller, Daniel Ostapko, Thomas Bucelot, Leon Stok, and Eric Kronstadt Ior their contribution and support oI this project.
7. References
|1| http://public.itrs.net |2| Yuan Taur, 'CMOS design near the limit oI scaling, IBM Journal of Research and Development, Vol. 46, No. 2/3, March/May 2002, pp. 213-222. |3| H. Bakoglu, Circuits Interconnections and Packaging for VLSI, Addison-Wesley, New York, 1990. |4| Patrik Larsson, 'Resonance and damping in CMOS circuits with on-chip decoupling capacitance, IEEE Transactions on Circuits and Systems Part I: Fundamental Theory and Applications, Vol. 45, No. 8, August 1998, pp. 849-858. |5| Bradley McCredie and Wiren Dale Becker, 'Modeling, Measurement, and Simulation oI Simultaneous Switching Noise, IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging, Vol. 19, No. 3, August 1996, pp. 461-472. |6| Howard H. Chen and J. Scott Neely, 'Interconnect and Circuit Modeling Techniques Ior Full-Chip Power Supply Noise Analysis, IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging, Vol. 21, No. 3, August 1998, pp. 209-215. |7| J. Scott Neely, Howard H. Chen, Steven G. Walker, James Venuto, Thomas J. Bucelot., 'CPAM: A Common Power Analysis Methodology Ior High- PerIormance VLSI Design, IEEE 9 th Topical Meeting on Electrical Performance of Electronic Packaging, October 2000, pp. 303-306. |8| Gary K. Yeap, Practical Lower Power Digital VLSI Design, Kluwer Academic Publishers, Boston, 1998. |9| Anirudh Devgan and Ronald A. Rohrer, 'Adaptively controlled explicit simulation, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 13, No. 6, June 1994, pp. 746-762. |10| William T. Weeks, Alberto Jose Jimenez, Gerald W. Mahoney, Deepak Mehta, Hassan Qassemzadeh, and Terence R. Scott, 'Algorithms Ior ASTAP a network-analysis program, IEEE Transactions on Circuit Theory, Vol. CT-20, No. 6, November 1973, pp. 628-634.
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