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IEEE Journal of Solid-State Circuits M Tech Thesis in Digital Image Processing/DIP � Techsparks �
Medium 77. VLSI LAB Dept. of ece 77 UR11EC098 T-FLIPFLOP: Block Diagram: Characteristic
Table : Qt+1=Qt xor t Circuit Diagram : Q T Q(t+1) 0 0 0 1 1 0 1 1 0 1 1 0 このページのファイルが存
在しない 17. VLSI LAB Dept. of ece 17 UR11EC098 end process; end behavioral; Structural
Model : library IEEE; use IEEE.STD_LOGIC_1164.ALL; entity fa is Port ( a : in STD_LOGIC; b :
in STD_LOGIC; c : in STD_LOGIC; sum : out STD_LOGIC; carry : out STD_LOGIC); end fa;
architecture structural of fa is component xor1 is port(x1,y1,z1:in std_logic; w1:out std_logic); end
component; component and1 is port(x2,y2:in std_logic; w2:out std_logic); end component;
component or1 is port(x3,y3,z3:in std_logic; w3:out std_logic); end component; 55. VLSI LAB
Dept. of ece 55 UR11EC098 10. VLSI LAB Dept. of ece 10 UR11EC098 145. VLSI LAB Dept. of
ece 145 UR11EC098 Boolean Expression NETLIST: TSPICE - Tanner SPICE Version 7.10
Copyright (c) 1993-2001 Tanner Research, Inc. Device and node counts: MOSFETs - 12 MOSFET
geometries - 2 BJTs - 0 JFETs - 0 MESFETs - 0 Diodes - 0 Capacitors - 0 Resistors - 0 Inductors - 0
Mutual inductors - 0 Transmission lines - 0 Coupled transmission lines - 0 Voltage sources - 4 Current
sources - 0 VCVS - 0 VCCS - 0 CCVS - 0 CCCS - 0 V-control switch - 0 I-control switch - 0 Macro
devices - 0 Functional model instances - 0 Subcircuits - 0 Subcircuit instances - 0 Independent nodes
- 6 Boundary nodes - 5 Total nodes - 11 Warning T-SPICE : The vrange voltage range limit (5.5) for
diode tables has been exceeded. Warning T-SPICE : The vrange voltage range limit (5.5) for
MOSFET tables has been exceeded. Warning T-SPICE : The vrange voltage range limit should be
set to at least 1480.5 for best accuracy and performance. Parsing 0.04 seconds Setup 0.00 seconds
DC operating point 0.00 seconds Transient Analysis 4.23 seconds Total 4.27 seconds 81. VLSI LAB
Dept. of ece 81 UR11EC098 15. VLSI LAB Dept. of ece 15 UR11EC098 sum : out STD_LOGIC;
carry : out STD_LOGIC); end fa; architecture behavioral of fa is begin process (a,b,c) begin if a='0'
and b='0' and c='0' then sum<='0' ; carry<='0'; elsif a='0' and b='0' and c='1' then sum<='1' ; carry
<='0'; elsif a='0' and b='1' and c='0' then sum<='1' ; carry<='0'; elsif a='0' and b='1' and c='1' then sum
<='0' ; carry<='1'; elsif a='1' and b='0' and c='0' then sum<='1' ; carry<='0'; elsif a='1' and b='0' and
c='1' then sum<='0';carry<='1'; elsif a='1' and b='1' and c='0' then sum<='0';carry<='0'; elsif a='1' and
b='1' and c='1' then sum<='1';carry<='1'; end if; 113. VLSI LAB Dept. of ece 113 UR11EC098
CCVS - 0 CCCS - 0 V-control switch - 0 I-control switch - 0 Macro devices - 0 Functional model
instances - 0 Subcircuits - 0 Subcircuit instances - 0 Independent nodes - 1 Boundary nodes - 3 Total
nodes - 4 Parsing 0.01 seconds Setup 0.01 seconds DC operating point 0.00 seconds Transient
Analysis 0.00 seconds ----------------------------------------- Total 0.02 seconds NETLIST:(CMOS NAND
) NETLIST: TSPICE - Tanner SPICE Version 7.10 Copyright (c) 1993-2001 Tanner Research, Inc.
Device and node counts: MOSFETs - 4 MOSFET geometries - 2 BJTs - 0 JFETs - 0 MESFETs - 0
Diodes - 0 Capacitors - 0 Resistors - 0 Inductors - 0 Mutual inductors - 0 Transmission lines - 0
Coupled transmission lines - 0 Debugging a terminal of our real-time MIMO-OFDM testbed: A
missing jumper related to received signal strength indication (RSSI) and frame synchronization at
one RF board caused several hours of debugging work and impeded us from having dinner... 134.
VLSI LAB Dept. of ece 134 UR11EC098 OUTPUT: 57. VLSI LAB Dept. of ece 57 UR11EC098
26. Post Layout Verification The huge number of transistors in a circuit can make the voltage level
drop below a defined margin that ensures that the circuit works properly. IR Drop analysis allows
checking the power grid to ensure that it is strong enough to hold that minimum voltage level.
Synopsys Prime Rail is the tool that outputs IR-drop and EM analyses reports. The final step is to
run Synopsys Hercules which is a DRC/LVS verification tool. DRC (Design Rules Checking)
checks if the foundry geometric and connectivity rules are met. Examples of DRC´s include:
Metal to metal spacing; well to well spacing; minimum metal width; Antenna Effect; Metal fill
density. LVS (Layout Versus Schematic) checks if the physical circuit corresponds to the original
circuit schematic. 20. VLSI LAB Dept. of ece 20 UR11EC098 Digital Image Processing IEEE
Projects for MTech ME Masters & PhD Digital Image Processing IEEE Projects for MTech ME
Masters & PhD 119. VLSI LAB Dept. of ece 119 UR11EC098 RESULT: The design and simulation
of a CMOS inverter,CMOS NAND and CMOS NOR logic has been verified using tanner tools.
Implementation Criteria for Student Teaching School Placement Power consumption ( low ) Read 4.
28.Low Voltage and Low Power Divide-By-23 Counter Design Using Pass Transistor Logic Circuit
Technique 29.Low-Cost Scan-Chain-Based Technique to Recover Multiple Errors in TMR Systems
30.Low-Power Correlation for IEEE 802.16 OFDM Synchronization on FPGA 31.Low-Power Level
Shifter for Multi-Supply Voltage Designs 32.Performance Analysis of Power Gating designs in Low
Power VLSI Circuits 33.PODIA Power Optimization through Differential Imbalanced Amplifier
34.Power-Up Sequence Control for MTCMOS Designs 35.Reconsidering High-Speed Design
Criteria for Transmission-Gate-Based Master–Slave Flip-Flops 36.Robust Secure Scan Design
Against Scan-Based Differential Cryptanalysis 37.Sub-mW LC Dual-Input Injection-Locked
Oscillator for Autonomous WBSNs 38.Ultra-Low Power VLSI Circuit Design Demystified and
Explained A Tutorial One of the three MIMO testbed terminals at the IEEE ISCAS'09 live
demonstration contest in Taipei, Taiwan. 22. VLSI LAB Dept. of ece 22 UR11EC098 Output Wave
form of Full Adder : Output Waveform of Half Adder : 5. 39.Ultralow-Voltage Process-Variation-
Tolerant Schmitt-Trigger-Based SRAM Design 40.Verification of USB 3.0 Device IP using
Universal Verification Methodology 41.Zero -Order Control of Boost DC-DC Converter With
Transient Enhancement Scheme
© 2013 - 2024 studylib.net all other trademarks and copyrights are the property of their respective
owners 121. VLSI LAB Dept. of ece 121 UR11EC098 AIM: To design and simulate CMOS half-
adder and full-adder using tanner EDA. SOFTWARE USED: Tanner EDA 7.0 THEORY: HALF
ADDER: A combinational circuit that performs the addition of 2 bits is called a half adder. This
circuit accepts two binary inputs and produces two binary outputs. The input variables designate
augends and addend bits; the output variables designate sum and carry. The simplified SOP terms
are sum = a’b+ab’ carry = ab FULLADDER: A combinational circuit that performs the addition of 3
bits is called a full adder. This circuit accepts 3 binary inputs and produces two binary outputs. The
two outputs are denoted by sum and carry. The simplified SOP terms are sum=
abc+a’b’c+ab’c’+a’bc’ carry = ab + bc+ca PROCEDURE: 1.Open the schematic editor(S-edit) from
the tanner EDA tool. 2.Get the required components from the symbol browser and design given
circuit using the S-edit. Ex No: 9 9.DESIGN AND SIMULATION OF CMOS HALF AND FULL
ADDERSDate: 12-3-14 VLSI Circuits for MIMO Preprocessing, 3. 3 3 Speed/power performance of
available technologies: In order to improve the through put rate it will be necessary to improve the
technology both in term of scaling and processing, and through the incorporation of other
enhancements such as BICMOS to CMOS. Above 100million instruction/sec, one must look to
other technology like gallium Arsenide (GaAs) based technology. GaAs in combination with
silicon will provide designer some exciting possibilities. 4 Basic MOS transistor symbol E-MOSFET
DE-MOSFET DE-MOSFET conducts when Vgs=0, Vgs=+ve and Vgs=-ve as a channel exist
between source(S) and drain (D). E-MOSFET does not conduct when Vgs=0. 26. VLSI LAB
Dept. of ece 26 UR11EC098 1*4 Demultiplexer : Block diagram : Truth Table : Y0=DS0’S1’;
Y1=DS0’S1 ;Y2=DS0S1’ ; Y3= DS0S1; Logic Diagram : 97. VLSI LAB Dept. of ece 97
UR11EC098 architecture Behavioral of mod_ctr is begin process(clk,reset) begin if reset='1' then q
<="0000"; elsif rising_edge(clk) then q<=q+1; if q="1001" then q
<="0000";
end
if;
end
if;
end
process;
end
Behavioral;
Digital
Image
Processing
IEEE
Projects
for
MTech
ME
Masters
&
PhD
102.
VLSI
LAB
Dept.
of
ece
102
UR11EC098
SRAM
:
Logic
Diagram
:
VLSI
LAB
Dept.
of
ece
102
UR11EC098
SRAM
:
Logic
Diagram
:
VLSI
LAB
Dept.
of
ece
102
UR11EC098
SRAM
:
Logic
Diagram
:
41.
VLSI
LAB
Dept.
of
ece
41
UR11EC098
Result:
The
design
and
simulation
of
the
multiplexer
and
demultiplexer
using
dataflow,
behavioral
modeling and Structural modeling has been performed using VHDL code and software mentioned.
12. FORK JOIN The fork...join construct enables the creation of concurrent processes from each of
its parallel statements. SyntemVerilog provides following version's of fork-join.fork -join is same as
one in Verilog. i.e. is join all. fork - join_none, does not wait for any forked process is complete and
thus starts execution statements after the join_none statement without waiting for forked process.
このページは30秒後にFC2ホームページのトップページにジャンプします。 98. VLSI LAB Dept. of
ece
98 UR11EC098 OUTPUT WAVEFORMS: UP-DOWN COUNTER RING COUNTER :
MODULO-10 COUNTER : 143. VLSI LAB Dept. of ece 143 UR11EC098 When the input voltage
is increased beyond the threshold, the n-MOS transistor Mn starts to conduct a non-zero base
currents for Q2.Thus,the BJT Q1 and Q2 enter the forward active region. The base emitter junction
voltage of both transistors rise very abruptly and cause step down in DC voltage characteristics.For
high voltage levels,the drain to source voltage of Mn is zero and no base current can be supplied to
Q2. BICMOS NOR LOGIC: The base of the bipolar pull up transistor Q1 is being driven by two
series connected p-MOS transistors.Therefore the pull up device can be turned on only if both the
inputs are logic low. The base of the bipolar pull down transistor Q2 is being driven by two //lel
connected n-MOS transistors.Therefore, the pull down device can be turned on if either one or both
of
the
inputs are high.Also, the base charge of the pull up device is removed by two minimum sized n-MOS
transistors connected in //lel between the base node and the ground. BICMOS NAND LOGIC: The
base of the bipolar pull up transistor Q1 is being driven by two//lel connected p-MOS
transistors.Here, the pull up device is turned on when either one or both of the inputs are logic
low.The bipolar pull down transistor Q2 on the other hand is driven by two series connected n-MOS
transistors between output node and the base.Therefore, the pulldown device can be turned on only
if both of the inputs are logic high.For the removal of the base charge of Q1 during turn off,two
series connected n-MOS transistors are used,whereas only one n-MOS transistor is utilised for
removing the base charge of Q2. PROCEDURE: 1.Open the schematic editor(S-edit) from the tanner
EDA tool. 2.Get the required components from the symbol browser and design given circuit using
the
S-edit. 3.Give the external supply from the library to the circuit. 4.Write the program in the T-edit
and
run the simulation and check for errors. 5.Remove all the errors and again write the program in the T-
edit and run. 6.Output waveform is viewed in the waveform viewer. 7.Get the net list and verify the
output. 26. Thank You for your Attention ! IC Technology Development Journey Please feedback at:
[email protected]
kalyan5.blogspot.com 26 40. VLSI LAB Dept. of ece 40 UR11EC098
Output Waveform of 4*1 Multiplexer : Output Waveform of 1*4 Demultiplexer : 25. References
Books Verilog HDL : A guide to digital design and synthesis. By Samir Plantikar Websites
Wikipedia for detailed knowledge of characteristics, advantage, disadvantages of various electronic
devices. .http://www.xilinx.com/ http://verilogbynaresh.blogspot.in 1. VLSI ASSIGNMENT 1 To be
submitted in by 10:00am on 4th November 2011 1. Describe the factors that led to the emergence of
VLSI
design
in microelectronic engineering? 2. With the aid of appropriate diagrams, describe Moore’s law and
state its limitations 3. Describe the major processes in the VLSI design process. 4. With reference to
the
PMOS transistor, describe the drain current characteristic. 5. With the aid of an NPN BJT, using the
simple terms differentiate between a pull up and a pull down device. 6. Explain the term “latch up”
as applied to CMOS operation. 7. Give an account for the defects in the IC manufacturing process. 8.
Explain the term “yield” in chip manufacturing and show the mathematical models that could be
used to study the yield of the manufactured IC chips. 9. What do you understand by the following
terms as applied to VLSI design; i). stick diagram ii). Circuit diagram iii). Layout diagram 10. With
the
aid of a circuit diagram, describe how a NAND gate can be implemented using CMOS logic. 11.
Using appropriate sketches in CMOS and NMOS, explain the concept of transmission gates. 12.
Show how an 8-input MUX can be designed in CMOS using pass transistors. 13. Draw a block
diagram to describe the memory architecture. 14. Define the following terms as applied to memory:
i. A memory cell ii. Memory word iii. Capacity 15. Differentiate between the following using relevant
examples: i. Static memory devices and dynamic memory devices. ii. Main memory and auxiliary
memory 16. Explain the optimization variables in the design of memory devices and how they affect
one another. 17. What is meant by pre-charging in MOS circuit design? Why might it be used and
how does it work? Home >> Uncategorized >> M.tech thesis on image processing 42. VLSI LAB
Dept.
of
ece
42 UR11EC098 AIM: To design and simulate 3x8 Decoder and 2 Bit Magnitude Comparator using
three different architectures namely i. Dataflow ii. Behavioral iii. Structural SOFTWARE USED:
1.Xilinx ISE 9.2i 2.Model SIM SE6.5 THEORY : 3x8 DECODER A decoder is a device which does
the
reverse operation of an encoder, undoing the encoding so that the original information can be
retrieved. The same method used to encode is usually just reversed in order to decode. It is a
combinational circuit that converts binary information from n input lines to a maximum of 2n unique
output lines. A 3 to 8 decoder consists of three inputs and eight outputs. Application : A simple CPU
with 8 registers may use 3-to-8 logic decoders inside the instruction decoder to select two source
registers of the register file to feed into the ALU as well as the destination register to accept the
output of the ALU. A typical CPU instruction decoder also includes several other things. Ex No: 3 3.
3x8 Decoder and 2 Bit Magnitude ComparatorDate :22-1-14 136. VLSI LAB Dept. of ece 136
UR11EC098
2X1 MULTIPLEXER CIRCUIT DIAGRAM : CODING: Embedded 164. VLSI LAB Dept. of ece
164 UR11EC098 149. VLSI LAB Dept. of ece 149 UR11EC098 BICMOS NAND NETLIST:
TSPICE - Tanner SPICE Version 7.10 Copyright (c) 1993-2001 Tanner Research, Inc. Device and
node counts: MOSFETs - 4 MOSFET geometries - 2 BJTs - 2 JFETs - 0 MESFETs - 0 Diodes - 0
Capacitors - 1 Resistors - 0 Inductors - 0 Mutual inductors - 0 Transmission lines - 0 Coupled
transmission lines - 0 Voltage sources - 3 Current sources - 0 VCVS - 0 VCCS - 0 CCVS - 0 CCCS -
0 V-control switch - 0 I-control switch - 0 Macro devices - 0 Functional model instances - 0
Subcircuits - 0 Subcircuit instances - 0 Independent nodes - 3 Boundary nodes - 4 Total nodes - 7
Parsing 0.01 seconds Setup 0.00 seconds DC operating point 0.01 seconds Transient Analysis 5.35
seconds ----------------------------------------- Total 5.37 seconds 17. VLSI LAB Dept. of ece 17
UR11EC098
end
process;
end
behavioral; Structural Model : library IEEE; use IEEE.STD_LOGIC_1164.ALL; entity fa is Port ( a :
in STD_LOGIC; b : in STD_LOGIC; c : in STD_LOGIC; sum : out STD_LOGIC; carry : out
STD_LOGIC); end fa; architecture structural of fa is component xor1 is port(x1,y1,z1:in std_logic;
w1:out std_logic); end component; component and1 is port(x2,y2:in std_logic; w2:out std_logic);
end
component; component or1 is port(x3,y3,z3:in std_logic; w3:out std_logic); end component; 70.
VLSI
LAB
Dept.
of
ece
70 UR11EC098 59. VLSI LAB Dept. of ece 59 UR11EC098 A VLSI (Very Large Scale Integration)
system integrates millions of “electronic components” in a small area (few mm2 few cm2). 7.
Unbelievable facts AVIDAC was the first digital computer at Argonne National Laboratory, and
began operating in 1953. It was built by the Physics Division for $250,000. Pictured shown AVIDAC,
is pioneer Argonne computer scientist Jean F. Hall. AVIDAC stands for "Argonne Version of the
Institute's Digital Automatic Computer" and was based on architecture developed by mathematician
John von Neumann. 7
5. VLSI LAB Dept. of ece 5 UR11EC098 Procedure: Create a new project by using file-new
project. Name the new project and choose VHDL module. Choose the architecture and give the
entity details. A sample module is generated .Additional required library files are included.
Architecture is automatically generated. Now the coding is done under the architecture part and at
last give ‘end architecture name’. The syntax is checked. Once the syntax is correct simulation is
done. Graph is plotted for various combination of input values. Source code :( HALF ADDER)
Data Flow Model : library IEEE; use IEEE.STD_LOGIC_1164.all; entity Half_Adder is port( a : in
STD_LOGIC; b : in STD_LOGIC; sum : out STD_LOGIC; carry : out STD_LOGIC ); end
Half_Adder; architecture Half_Adder_arc of Half_Adder is begin sum <= a xor b; carry <= a and b;
end Half_Adder_arc; Artificial intelligence Mixed-signal connections to the MMSE-SQRD ASIC
interface on the MIMO prototyping platform. At the time of designing the PCB, I was not aware of
the importance of convenient debugging access by means of a suitable high-density logic-analyzer
connector. Instead, I simply relied on extended standard headers interfacing the MMSE-SQRD ASIC
PCB with the VAMP board. The standard headers also allowed to accomplish the job, but correctly
connecting approximately 27 unique logic-analyzer wires is tedious and much more error-prone, and
finally lasted more than an hour... 8. 8 A silicon dioxide (Sio2) layer of typically 1µm thick is
grown all over the surface of the wafer, this protective layer act as barrier to dopants during
processing. Photo resist is deposited on the wafer to get even distribution required thickness.
The photo resist layer is exposed to UV light by means of required mask. The exposed areas UV are
polymerized (hardened) and unexposed areas remain unaffected. These areas (hardened areas) are
etched away along underlying Sio2 so that the wafer surface is exposed in the window defined by
mask. 10. CONTACT US Head Office :- Jaipur Rajasthan CSI (Cadbridge Semiconductor Pvt. Ltd.)
Queen’S Academy School Campus, Sector 10, Kumbha Marg, Pratap Nagar, Jaipur, 9782121890,
7733006020 Website :- www.csiindia.net BRANCHES : Jaipur Faridabad Gurgaon
Banglore Ujjain Roorkee Mail Id :-
[email protected]
135. VLSI LAB Dept. of ece 135
UR11EC098 Netlist:(Transmission gate) TSPICE - Tanner SPICE Version 7.10 Copyright (c) 1993-
2001 Tanner Research, Inc. Parsing "C:UsersKARUNYADesktopModule0.sp" Device and node
counts: MOSFETs - 4 MOSFET geometries - 2 BJTs - 0 JFETs - 0 MESFETs - 0 Diodes - 0
Capacitors - 0 Resistors - 0 Inductors - 0 Mutual inductors - 0 Transmission lines - 0 Coupled
transmission lines - 0 Voltage sources - 3 Current sources - 0 VCVS - 0 VCCS - 0 CCVS - 0 CCCS -
0 V-control switch - 0 I-control switch - 0 Macro devices - 0 Functional model instances - 0
Subcircuits - 0 Subcircuit instances - 0 Independent nodes - 2 Boundary nodes - 4 Total nodes - 6
Parsing 0.00 seconds Setup 0.00 seconds DC operating point 0.00 seconds Transient Analysis 0.03
seconds Total 0.03 seconds 5. 39.Ultralow-Voltage Process-Variation-Tolerant Schmitt-Trigger-Based
SRAM Design 40.Verification of USB 3.0 Device IP using Universal Verification Methodology
41.Zero -Order Control of Boost DC-DC Converter With Transient Enhancement Scheme In short,
my activities in this research project generated the following research contributions: 11. Difference
Between VHDL & VERILOG VHDL Not case sensitive. Difficult to learn. Based on pascal
& ada. Strongly typed. VERILOG Case sensitive. Easy to learn. Based on c. Not
strongly typed. 56. VLSI LAB Dept. of ece 56 UR11EC098 equal<='1'; greater<='0'; lesser<='0';
elsif(a>b)then equal<='0'; greater<='1'; lesser<='0'; elsif(a
M tech thesis on image processing - Kaalya Creative Agency Best VLSI Training Institutes Best
Choice for Career 18. VLSI LAB Dept. of ece 18 UR11EC098 44. VLSI LAB Dept. of ece 44
UR11EC098 2Bit Magnitude Comparator : Magnitude comparator is a combinational circuit that
compares two numbers and determines their relative magnitude. For a 2-bit comparator we have four
inputs A1A0 and B1B0 and three outputs: E (is 1 if two numbers are equal) G (is 1 when A > B) and
L (is 1 when A < B) Output Expressions : f(A>B) = A1B1‘+ (A1 + B1’) A0B0’ = A1B1‘+ A0
B1’B0’+ A1A0B0’ f(A=B)=A1’A0’B1’B0’+A1’A0B1’B0+A1A0’B1B0+ A1A0B1B0 =
(A1’B1’+A1B1)(A0’B0’+A0B0) f(A
Digital Image Processing IEEE Projects for MTech ME Masters & PhD 95. VLSI LAB Dept. of ece
95 UR11EC098 process(clk,reset,q) begin if reset='1' then q<="00"; elsif rising_edge(clk) then q
<=q+1; end if; case q is when "00"=>s<="0001"; when "01"=>s<="0010"; when "10"=>s<="0100";
when others=>s<="1000"; end case; end process; end Behavioral; MOD-10 COUNTER(Behavioral)
library IEEE; use IEEE.STD_LOGIC_1164.ALL; use IEEE.STD_LOGIC_ARITH.ALL; use
IEEE.STD_LOGIC_UNSIGNED.ALL; entity mod_ctr is Port ( clk,reset: in STD_LOGIC; q : inout
STD_LOGIC_VECTOR(3 downto 0)); end mod_ctr; 9. HOW WE SUPPORT : 1. TEAM VIEWER
2. SKYPE 3. TELEPHONE CONVERSATION 4. VIDEO & AUDIO FILE 5. DIRECT SUPPORT
ISBN-13: 978-3-86628-295-7 141. VLSI LAB Dept. of ece 141 UR11EC098 AIM: To design and
simulate BICMOS inverter, BICMOS NAND and BICMOS NOR gate and Boolean expression
using Tanner EDA. SOFTWARE USED: Tanner EDA 7.0 THEORY: BICMOS on chip is
obtained by merging CMOS and BJT devices.An alternative solution to the problem of driving large
capacitive loads can be provided by BICMOS.Taking advantage of the low problem consumption of
the CMOS and the high current driving capability of BJT during transients, the BICMOS can
combine the “best of both worlds”.The BICMOS combination has significant advantages to offer
such as improved switching speed and less sensitivity w.r.t the load capacitance.In general, BICMOS
logic circuits are not bipolar intensive i.e most logic operations are performed by conventional CMOS
sub circuits,while the bipolar transistor are used only when high on chip or off chip drive capability is
required. The most significant drawback of BICMOS circuit lies in the increased fabrication process
complexity,it requires 3-4 masks in addition to the well established CMOS process. BICMOS
INVERTER: It consists of two MOS transistors(inverter part) and two npn BJT which can drive a
large capacitive load.In addition,two n-MOS transistors(Mb1 & Mb2) are usually added to provide
the necessary base discharge path. When the input voltage is very close to zero, the n-MOS
transistors Mh and Mb1 are off,whereas p-MOS transistor Mp and thus the n-MOS transistor Mb2
are on.Since the base voltage of Q2 is equal to zero the bipolar output pull down transistor is in cut off
mode,consequently, both the BJT Q1 and Q2 are not able to conduct any current at this point. Ex No:
11 11.DESIGN AND SIMULATION OF BICMOS LOGIC CIRCUITS AND BOOLEAN
EXPRESSIONDate: 26-3-14 Excerpt with ToC, Ordering Information 27. VLSI LAB Dept. of ece
27 UR11EC098 Procedure : Create a new project by using file-new project. Name the new
project and choose VHDL module. Choose the architecture and give the entity details. A
sample module is generated .Additional required library files are included. Architecture is
automatically generated. Now the coding is done under the architecture part and at last give ‘end
architecture name’. The syntax is checked. Once the syntax is correct simulation is done.
Graph is plotted for various combination of input values. Source code : (Multiplexer) Data flow
model : library IEEE; use IEEE.STD_LOGIC_1164.ALL; entity mux is Port ( a : in STD_LOGIC; b
: in STD_LOGIC; c : in STD_LOGIC; d : in STD_LOGIC; s0 : in STD_LOGIC; s1 : in
STD_LOGIC; y : out STD_LOGIC); end mux; architecture dataflow of mux is 100. VLSI LAB
Dept. of ece 100 UR11EC098 141. VLSI LAB Dept. of ece 141 UR11EC098 AIM: To design and
simulate BICMOS inverter, BICMOS NAND and BICMOS NOR gate and Boolean expression
using Tanner EDA. SOFTWARE USED: Tanner EDA 7.0 THEORY: BICMOS on chip is
obtained by merging CMOS and BJT devices.An alternative solution to the problem of driving large
capacitive loads can be provided by BICMOS.Taking advantage of the low problem consumption of
the CMOS and the high current driving capability of BJT during transients, the BICMOS can
combine the “best of both worlds”.The BICMOS combination has significant advantages to offer
such as improved switching speed and less sensitivity w.r.t the load capacitance.In general, BICMOS
logic circuits are not bipolar intensive i.e most logic operations are performed by conventional CMOS
sub circuits,while the bipolar transistor are used only when high on chip or off chip drive capability is
required. The most significant drawback of BICMOS circuit lies in the increased fabrication process
complexity,it requires 3-4 masks in addition to the well established CMOS process. BICMOS
INVERTER: It consists of two MOS transistors(inverter part) and two npn BJT which can drive a
large capacitive load.In addition,two n-MOS transistors(Mb1 & Mb2) are usually added to provide
the necessary base discharge path. When the input voltage is very close to zero, the n-MOS
transistors Mh and Mb1 are off,whereas p-MOS transistor Mp and thus the n-MOS transistor Mb2
are on.Since the base voltage of Q2 is equal to zero the bipolar output pull down transistor is in cut off
mode,consequently, both the BJT Q1 and Q2 are not able to conduct any current at this point. Ex No:
11 11.DESIGN AND SIMULATION OF BICMOS LOGIC CIRCUITS AND BOOLEAN
EXPRESSIONDate: 26-3-14 3. VLSI LAB Dept. of ece 3 UR11EC098 AIM: To design and
simulate Half and Full adder using three different architectures namely i. Dataflow ii. Behavioral iii.
Structural SOFTWARE USED: 1.Xilinx ISE 9.2i 2.Model SIM SE6.5 THEORY: HALF ADDER: A
combinational circuit that performs the addition of 2 bits is called a half adder. This circuit accepts
two binary inputs and produces two binary outputs. The input variables designate augends and
addend bits; the output variables designate sum and carry. sum= a b. carry = ab. FULLADDER: A
combinational circuit that performs the addition of 3 bits is called a full adder. This circuit accepts 3
binary inputs and produces two binary outputs. The two outputs are denoted by sum and carry. sum=
a b c carry = ab + bc+ca Ex No:1 1. HALF ADDER AND FULL ADDER Date: 18-12-13 5. VLSI
LAB Dept. of ece 5 UR11EC098 Procedure: Create a new project by using file-new project.
Name the new project and choose VHDL module. Choose the architecture and give the entity
details. A sample module is generated .Additional required library files are included.
Architecture is automatically generated. Now the coding is done under the architecture part and at
last give ‘end architecture name’. The syntax is checked. Once the syntax is correct simulation is
done. Graph is plotted for various combination of input values. Source code :( HALF ADDER)
Data Flow Model : library IEEE; use IEEE.STD_LOGIC_1164.all; entity Half_Adder is port( a : in
STD_LOGIC; b : in STD_LOGIC; sum : out STD_LOGIC; carry : out STD_LOGIC ); end
Half_Adder; architecture Half_Adder_arc of Half_Adder is begin sum <= a xor b; carry <= a and b;
end Half_Adder_arc; Masters thesis topics in digital image processing - Techsparks Website :-
www.csiindia.net 146. VLSI LAB Dept. of ece 146 UR11EC098 BICMOS NAND CIRCUIT:
CODING: 127. VLSI LAB Dept. of ece 127 UR11EC098 M10 N5 B Gnd Gnd NMOS L=2u
W=22u AD=66p PD=24u AS=66p PS=24u M11 Gnd Bbar N3 Gnd NMOS L=2u W=22u AD=66p
PD=24u AS=66p PS=24u M12 Bbar B Gnd Gnd NMOS L=2u W=22u AD=66p PD=24u AS=66p
PS=24u M13 Cbar C Gnd Gnd NMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M14 Abar
A Gnd Gnd NMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M15 S3 A N2 Gnd NMOS
L=2u W=22u AD=66p PD=24u AS=66p PS=24u M16 N4 C Gnd Gnd NMOS L=2u W=22u
AD=66p PD=24u AS=66p PS=24u M17 S3 B N4 Gnd NMOS L=2u W=22u AD=66p PD=24u
AS=66p PS=24u M18 N10 A Gnd Gnd NMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u
M19 S3 C N10 Gnd NMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M20 CARRY S3 Gnd
Gnd NMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M21 S1bar S1 Vdd Vdd PMOS L=2u
W=22u AD=66p PD=24u AS=66p PS=24u M22 S2 C N19 Vdd PMOS L=2u W=22u AD=66p
PD=24u AS=66p PS=24u M23 N19 S1bar S2 Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p
PS=24u M24 N19 Cbar Vdd Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M25
Vdd S1 N19 Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M26 SUM S2 Vdd Vdd
PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M27 Vdd B N1 Vdd PMOS L=2u W=22u
AD=66p PD=24u AS=66p PS=24u M28 N1 A Vdd Vdd PMOS L=2u W=22u AD=66p PD=24u
AS=66p PS=24u M29 S1 A N6 Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M30
N6 Bbar S1 Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M31 Bbar B Vdd Vdd
PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M32 Cbar C Vdd Vdd PMOS L=2u
W=22u AD=66p PD=24u AS=66p PS=24u M33 Abar A Vdd Vdd PMOS L=2u W=22u AD=66p
PD=24u AS=66p PS=24u M34 N6 Abar Vdd Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p
PS=24u M35 Vdd B N6 Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M36 Bbar B
Vdd Vdd PMOS L=2u W=22u AD=66p PD=24u AS=66p PS=24u M37 N1 C N8 Vdd PMOS L=2u
W=22u AD=66p PD=24u AS=66p PS=24u MSU Solar Car Team * Electrical Team Steering Wheel
133. VLSI LAB Dept. of ece 133 UR11EC098 PROCEDURE: 1. Open the schematic editor(S-edit)
from the tanner EDA tool. 2. Get the required components from the symbol browser and design
given circuit using the S-edit. 3. Give the external supply from the library to the circuit. 4. Write the
program in the T-edit and run the simulation and check for errors. 5. Remove all the errors and again
write the program in the T-edit and run. 6. Output waveform is viewed in the waveform viewer. 7.
Get the net list and verify the output. The terminal configured as access point of the real-time 4x4
MIMO-OFDM testbed at the WinTech'08 live demonstration contest in San Francisco, CA, USA.
158. VLSI LAB Dept. of ece 158 UR11EC098 PSEUDO LOGIC: CODING: PARENT INPUT
INTO THE PLACEMENT PROCESS Download Now 22. FPGA Applications Due to their
programmable nature, FPGAs are an ideal fit for many different markets. As the industry leader,
Xilinx provides comprehensive solutions consisting of FPGA devices, advanced software, and
configurable, ready-to-use IP cores for market and applications such as: By Market By Technology
Aerospace and Defense Industrial Audio Automotive Medical Security Broadcast Wireless
Communications Video and Imaging Consumer Electronics Wired Communications High
Performance Computing FPGA vs. ASIC What is the Difference between a FPGAand an ASIC?
Field Programmable Gate Arrays (FPGAs) and Application Specific Integrated Circuits (ASICs)
provide different values to designers, and they must be carefully evaluated before choosing any one
over the other. Information abounds that compares the two technologies. While FPGAs used to be
selected for lower speed/complexity/volume designs in the past, today’s FPGAs easily push the
500MHz performance barrier. With unprecedented logic density increases and a host of other
features, such as embedded processors, DSP blocks, clocking, and high-speed serial at ever lower
price points, FPGAs are a compelling proposition for almost any type of design. A tribute to the
ingenious CORDIC circuit invented in 1959 by Jack E. Volder and the powerful and efficient Intel
Core architecture being popular at the time of engineering my ASIC: MMSE-SQRD V2 - "CORDIC
2 Duo - Do More" 72. VLSI LAB Dept. of ece 72 UR11EC098 54. Gallery - Current FPGA June 9,
2009 204424 Digital Design Automation Xilinx Virtex FPGA Neural networks M Tech Thesis in
Digital Image Processing/DIP � Techsparks � Medium Company for Providing Guidance For Mtech
And PhD Scholar
18. Cost of VLSI Chips 3 Billion Transistors+ INR 40K INR 20 I KG-INR 70 Total nos of Grains
>One MOS Transistor AIR Beijing's Air Is So Bad, the Sale of Bottled Canadian Mountain Air Is
Soaring. Transistor is almost free 18 M tech Thesis | Image Processing Masters | Foundation Programs
Detail Peter Jan Lüthi, Did you find mistakes in interface or texts? Or do you know how to improve
StudyLib UI? Feel free to send suggestions. Its very important for us! 52. VLSI LAB Dept. of ece
52 UR11EC098 SubProgram for and4 : library IEEE; use IEEE.STD_LOGIC_1164.ALL; entity
and4 is Port ( g : in STD_LOGIC; h : in STD_LOGIC; i : in STD_LOGIC; j : in STD_LOGIC; k :
out STD_LOGIC); end and4; architecture Structural of and4 is begin k<=g and h and i and j; end
Structural; Source Code :(2 Bit Magnitude Comparator) Data Flow Modeling: library IEEE; use
IEEE.STD_LOGIC_1164.all; entity comparator_2bit is port( a : in STD_LOGIC_VECTOR(1
downto 0); b : in STD_LOGIC_VECTOR(1 downto 0); equal : out STD_LOGIC; greater : out
STD_LOGIC; lower : out STD_LOGIC ); 23. VLSI LAB Dept. of ece 23 UR11EC098 Result: The
design and simulation of the half adder and full adder using dataflow, behavioral, structural modeling
has been performed using VHDL codeand software mentioned. CURRENT THESIS AND
RESEARCH TOPICS IN SOFTWARE ENGINEERING - E2MATRIX RESEARCH LAB 144.
VLSI LAB Dept. of ece 144 UR11EC098 BICMOS INVERTER CIRCUIT: CODING: 57. VLSI
LAB Dept. of ece 57 UR11EC098 148. VLSI LAB Dept. of ece 148 UR11EC098 BICMOS NOR
CIRCUIT: CODING: The Ultimate Truth about VLSI Online Courses 6. 39.Ultralow-Voltage
Process-Variation-Tolerant Schmitt-Trigger-Based SRAM Design 40.Verification of USB 3.0 Device
IP using Universal Verification Methodology 41.Zero -Order Control of Boost DC-DC Converter
With Transient Enhancement Scheme Circuit Speed ( high ) 158. VLSI LAB Dept. of ece 158
UR11EC098 PSEUDO LOGIC: CODING: Excerpt with ToC, Ordering Information Workspace
showing the LeCroy WaveRunner 204 MXi oscilloscope and the LeCroy MS-500-36 mixed-signal
extension for assessing electrical and timing aspects of the FPGA-ASIC interface during system-
level deployment of the MIMO preprocessing block. This sophisticated and powerful technical
solution from LeCroy greatly alleviated the challenging task of achieving system-level timing closure
for the MIMO preprocessing block at a target clock frequency of 80 MHz, especially for the interface
between ASICs and FPGA. 10. 10 . Metal of 1µm thickness is deposited overall the chip’s surface.
this metal layer is then masked and etched to form the required interconnected pattern 6 CMOS
fabrication: CMOS can be fabricated by P-well, n-well and twin tub process. 6.1 P-well process
Debugging a terminal of our real-time MIMO-OFDM testbed: A missing jumper related to received
signal strength indication (RSSI) and frame synchronization at one RF board caused several hours of
debugging work and impeded us from having dinner... New Program - Program Delivery Sequence
INS.140.032 5. Ideas • Microprocessor • Microcontroller • Memories • Printer • Mobile • Digital
security lock Any thing we needs chip 131. VLSI LAB Dept. of ece 131 UR11EC098 AIM: To
design and simulate 2x1 Mux and Transmission gate using Tanner software. SOFTWARE USED:
Tanner EDA 7.0 THEORY: MULTIPLEXER: It is combinational circuit that selects binary
information from one of the many inputs and directs it to a single output. The selection lines or
controlled lines. It is used as a data selector and parallel to serial convertor. In reference to the block
diagram a two bit binary code on the data select input will also allow the data on the corresponding
data input to pass through the data output. TRANSMISSION GATE: Transmission gates also known
as pass gates represents another class of logic circuits which use TGs as basic building block. It
consist of a PMOS and NMOS connected in parallel. Gate voltage applied to these gates is
complementary of each other(C and Cbar). TGs act as bidirectional switch between two nodes A and
B controlled by signal C. Gate of NMOS is connected to C and gate of PMOS is connected to
Cbar(invert of C). When control signal C is high i.e. VDD, both transistor are on and provides a low
resistance path between A and B. On the other hand , when C is low both transistors are turned off
and provides high impedance path between A and B. Ex No: 10 10.DESIGN AND SIMULATION
OF CMOS TRANSMISSION GATE AND MULTIPLEXER USING TGDate: 19-3-14 110. VLSI
LAB Dept. of ece 110 UR11EC098 CIRCUIT DIAGRAM FOR CMOS NAND GATE: CODING:
32. Microprocessor Trends (Log Scale) June 9, 2009 204424 Digital Design Automation Sources:
http://www.intel.com/pressroom/kits/quickreffam.htm, www.geek.com Alpha (R.I.P) P4N G4 P4
Hartung-Gorre, 2010, Ph.D. dissertation, ETH Zurich, Zurich, Switzerland, 2. 10.A Fast and
Accurate FPGA-Based Fault Injection System 11.A Mixed Signal (Analog-Digital) Integrator
Design 12.A New Leakage Reduction Method for Ultra Low Power VLSI Design for Portable
Devices 13.A novel fault detection and correction technique for memory applications 14.A
Reconfigurable 1 GSps to 250 MSps, 7-bit to 9-bit Highly TimeInterleaved Counter ADC with Low
Power Comparator Design 15.A Self-Checking Approach for SEUMBUs- Hardened FSMs Design
Based on the Replication of One-Hot Code 16.A Wide Temperature, Radiation Tolerant, CMOS-
Compatible Precision Voltage Reference for Extreme Radiation Environment Instrumentation
Systems 17.An 8-to-1 bit 1-MSs SAR ADC With VGA and Integrated Data Compression for Neural
Recording 18.Application of Fixator-Norator Pairs in Designing Active Loads and Current Mirrors in
Analog Integrated Circuits © 2013 - 2024 studylib.net all other trademarks and copyrights are the
property of their respective owners 133. VLSI LAB Dept. of ece 133 UR11EC098 PROCEDURE: 1.
Open the schematic editor(S-edit) from the tanner EDA tool. 2. Get the required components from
the symbol browser and design given circuit using the S-edit. 3. Give the external supply from the
library to the circuit. 4. Write the program in the T-edit and run the simulation and check for errors. 5.
Remove all the errors and again write the program in the T-edit and run. 6. Output waveform is
viewed in the waveform viewer. 7. Get the net list and verify the output. 7. VLSI LAB Dept. of ece
7 UR11EC098 Behavioral Model: library IEEE; use IEEE.STD_LOGIC_1164.ALL; entity ha
behavioral is Port ( a : in STD_LOGIC; b : in STD_LOGIC; sum : out STD_LOGIC; carry : out
STD_LOGIC); end ha behavioral; architecture Behavioral of ha behavioral is begin process (a,b)
begin if a='0' and b='0' then sum<='0';carry<='0'; elsif a='0' and b='1' then sum<='1';carry<='0'; elsif
a='1' and b='0' then sum<='1';carry<='0'; elsif a='1' and b='1' then sum<='0';carry<='1'; end if; end
process; end Behavioral;
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