DESIGN OF CMOS LC VOLTAGE CONTROLLED

OSCILLATORS

A Thesis

Submitted to the Graduate Faculty of the

Louisiana State University and
Agricultural and Mechanical College
in partial fulfillment of the
requirements for the degree of
Master of Science in Electrical Engineering

in

The Department of Electrical and Computer Engineering

by
Chetan Shambhulinga Salimath
Bachelor of Engineering, Visveswariah Technological University, India, 2002
December 2006

ACKNOWLEDGMENTS
I am extremely grateful to my advisor and mentor Dr. Ashok Srivastava for
granting me an opportunity to pursue research on this topic for my theses. This work would
never have been possible without his constant encouragement, support and tutelage.
I would like to express my gratitude to Dr. Pratul K. Ajmera and Dr. Suresh Rai for
being a part of my thesis committee.
I am extremely indebted to Dr. Robert C. Mathews, Dr. Sean M. Lane and
Dr. Mike Hawkins of the Department of Psychology, for supporting me financially during
my stay at LSU.
This work, my sojourn at LSU and all my endeavors would never have been
possible without the love, encouragement and patronage of my parents, Dr. S. S. Salimath
and Mrs. Sumangala Salimath. It is through them, that I have learnt to dream a dream and
realize it through sheer grit and perseverance.
Above all I am thankful to GOD for bestowing me with everything I possess in life.

ii

TABLE OF CONTENTS
ACKNOWLEDGMENTS ..................................................................................................... ii
LIST OF TABLES................................................................................................................. v
LIST OF FIGURES .............................................................................................................. vi
ABSTRACT.......................................................................................................................... ix
CHAPTER 1. INTRODUCTION .......................................................................................... 1
1.1
Motivation.............................................................................................................. 1
1.2
Organization of Thesis........................................................................................... 3
CHAPTER 2. NEGATIVE TRANSCONDUCTANCE OSCILLATOR THEORY............. 6
2.1
Overview of Oscillator Operation.......................................................................... 6
2.2
LC Oscillator Topologies..................................................................................... 10
2.2.1
Single Transistor Topology.......................................................................... 10
2.2.2
Cross-Coupled Differential Topology ......................................................... 13
2.2.3
NMOS or PMOS Cross-Coupled Oscillators .............................................. 14
2.2.4
CMOS Core Cross-Coupled Differential Oscillator .................................... 16
2.3
Oscillator Phase Noise ......................................................................................... 18
2.3.1
Definition of Phase Noise ............................................................................ 18
CHAPTER 3. ON-CHIP INDUCTORS .............................................................................. 25
3.1
Background .......................................................................................................... 25
3.2
Integrated Inductor Geometries ........................................................................... 26
3.3
Loss Mechanisms in Inductors............................................................................. 27
3.3.1
Metal Losses ................................................................................................ 27
3.3.2
Substrate Losses........................................................................................... 29
3.4
Inductor Model..................................................................................................... 34
3.4.1
Series Inductance (LS) .................................................................................. 34
3.4.2
Series Resistance (RS) .................................................................................. 42
3.4.3
Substrate Parasitics (Rsub, Csub) .................................................................... 42
3.5
Inductor Quality Factor........................................................................................ 43
3.6
Inductor Simulation Tools ................................................................................... 45
3.7
Inductor Design.................................................................................................... 49
3.7.1
Design of 4 nH Inductor .............................................................................. 49
3.7.2
Layout of Inductors...................................................................................... 51
CHAPTER 4. VARACTORS .............................................................................................. 58
4.1
Background .......................................................................................................... 58
4.2
MOS Varactor...................................................................................................... 59
4.3
Varactor Design ................................................................................................... 64
4.4
Simulation of Varactor Characteristics................................................................ 66
iii

CHAPTER 5. OSCILLATOR DESIGN.............................................................................. 71

5.1
Background .......................................................................................................... 71
5.2
Oscillator Design ................................................................................................. 71
5.3
Oscillator Simulation ........................................................................................... 73
5.4
Layout of the Test Chip ....................................................................................... 77
5.5
Test Setup Measurement Configuration .............................................................. 77
5.6
1.8 GHz VCO....................................................................................................... 85
CHAPTER 6. CONCLUSIONS AND FUTURE WORK................................................. 100
BIBLIOGRAPHY.............................................................................................................. 101
APPENDIX A: MATLAB PROGRAM TO COMPUTE INDUCTANCE VALUE ........ 104
APPENDIX B: TECHNOLOGY FILE USED IN ASITIC............................................... 107
APPENDIX C: INDUCTOR GEOMETRIES EXPLORED ............................................. 109
APPENDIX D: SPICE CIRCUIT FILE REPRESENTING THE BROADBAND
MODEL ............................................................................................................................. 109
APPENDIX E: SPICE BSIM3 MODEL PARAMETERS................................................ 130
APPENDIX F: SPICE BSIM3 MODEL PARAMETERS ................................................ 135
APPENDIX G: DE-EMBEDDING ................................................................................... 140
APPENDIX H: SPICE NETLIST INDICATING EXTRACTED PARASITICS ............ 142
VITA .................................................................................................................................. 145

iv

LIST OF TABLES
Table 3.1. Variation of skin depth with frequency .............................................................. 46
Table 3.2. Coeffecients for Modified Wheeler Expression ................................................. 46
Table 3.3. Coeffecients for Current Sheet Expression......................................................... 47
Table 3.4. Coeffecients for Data Fitted Monomial Expression ........................................... 47
Table 3.5. Final parameters for the integrated inductor....................................................... 54

LIST OF FIGURES
Figure 1.1: Block diagram of a typical Phase Locked Loop (PLL)....................................... 4
Figure 1.2: Evolution of VCO technology (adapted from [5]). ............................................. 4
Figure 2.1: Simple linear feedback system. ........................................................................... 8
Figure 2.2: Illustration of the feedback system with a frequency selective network............. 8
Figure 2.3: One port view of an oscillator. ............................................................................ 9
Figure 2.4: Equivalent LC resonator circuit. ......................................................................... 9
Figure 2.5: (a) Direct feedback from drain to source, (b) Feedback in presence of an
impedance transformer......................................................................................................... 12
Figure 2.6: (a) Colpitts oscillator (b) Hartley oscillator . .................................................... 12
Figure 2.7: (a) One transistor oscillator with active buffer in feedback loop, (b) with a
source follower as active buffer, (c) cross-coupled differential oscillator and (d) circuit to
estimate the negative resistance of the cross-coupled pair. ................................................. 15
Figure 2.8: (a) NMOS-only oscillator, (b) PMOS-only oscillator, (c) NMOS-only oscillator
with a tail current source and (d) PMOS-only oscillator with a tail current sink. ............... 17
Figure 2.9: (a), (b) CMOS cross-coupled differential oscillator without and with tail current
source and (c) calculation of total negative resistance of CMOS differential topology...... 19
Figure 2.10: (a), (b) Ideal and Real oscillator spectrum. ..................................................... 21
Figure 2.11: Illustration of phase noise in an oscillators output spectrum. ........................ 23
Figure 2.12: Typical phase noise plot for an oscillator........................................................ 23
Figure 2.13: Equivalent circuit representation of an LC oscillator...................................... 24
Figure 3.1: Square spiral with typical geometric parameters. ............................................. 28
Figure 3.2: An illustration of substrate loss mechanisms. ................................................... 31
Figure 3.3: Substrate related capacitive losses. ................................................................... 31
Figure 3.4: Generation of substrate currents on planar inductors........................................ 33
Figure 3.5: Generation of eddy currents in inductors. ......................................................... 33
vi

Figure 3.6: Illustration of conventional model [22, 25]. ................................................. 36

Figure 3.7: Equivalent model. ......................................................................................... 36
Figure 3.8: Top view of a 2-turn (8-segment) rectangular spiral......................................... 38
Figure 3.9: Model of two conductors carrying in-phase and out-of-phase currents............ 38
Figure 3.10: Lumped one-port on-chip inductor model....................................................... 48
Figure 3.11: Equivalent circuit of one-port on-chip inductor model. .................................. 48
Figure 3.12: Self inductance versus frequency for the series inductor structure. ................ 55
Figure 3.13: Equivalent resistance versus frequency for the series inductor structure........ 55
Figure 3.14: Layout of single inductor. ............................................................................... 56
Figure 3.15: Layout of dual (series) inductor. ..................................................................... 57
Figure 4.1: (a) CMOS p+/ n-well junction varactor and (b) capacitance versus voltage
characteristics....................................................................................................................... 60
Figure 4.2: MOS Capacitor................................................................................................. 62
Figure 4.3: Capacitance versus voltage characteristics of a MOS capacitor. ...................... 62
Figure 4.4: Inversion-mode MOS capacitor. ....................................................................... 63
Figure 4.5: Capacitance versus voltage characteristics of inversion-mode MOS capacitor.63
Figure 4.6: Accumulation-mode MOS capacitor................................................................. 65
Figure 4.7: Accumulation mode MOS capacitor characteristics. ........................................ 65
Figure 4.8: Series connection of pMOS varactors. .............................................................. 67
Figure 4.9: Actual implementation schematic of the pMOS varactor. ................................ 67
Figure 4.10: Tank capacitance versus tuning voltage, Vtune. ............................................... 68
Figure 4.11: Cross section of the varactor layout. ............................................................... 69
Figure 4.12: Circuit used to simulate the varactor C-V characteristics. ............................. 70
Figure 5.1: VCO Circuit. ..................................................................................................... 74
vii

Figure 5.2: Modified VCO Circuit....................................................................................... 75

Figure 5.3: Oscillator single ended outputs. ........................................................................ 76
Figure 5.4: Final VCO layout. ............................................................................................. 78
Figure 5.5: Complete test chip layout. ................................................................................. 79
Figure 5.6: DUT Interface Board......................................................................................... 81
Figure 5.7: Oscillator measurement setup. .......................................................................... 82
Figure 5.8: VCO tuning characteristics. .............................................................................. 83
Figure 5.9: Micro photograph of the 1.1 GHz CMOS VCO test chip (1.5 m CMOS)...... 84
Figure 5.10 : Complete circuit of the 1.8 GHz VCO core. .................................................. 88
Figure 5.11: Oscillator single ended output......................................................................... 89
Figure 5.12: 1.8 GHz VCO final layout............................................................................... 92
Figure 5.13: Inductor test structure...................................................................................... 93
Figure 5.14: Open circuit and short circuit bond pad structures.......................................... 94
Figure 5.15: Complete test chip layout of the 1.8 GHz VCO (0.5 m CMOS). ................. 95
Figure 5.16 Modified test chip layout to extract parasitic capacitances related to internal
and external bond pads......................................................................................................... 96
Figure 5.17: Measurement setup for the 1.8 GHz VCO. ..................................................... 97
Figure 5.18: Oscillator output as observed on the Digital Sampling Oscilloscope. ............ 98
Figure 5.19: Micro photograph of the 1.8 GHz CMOS VCO chip...................................... 99
Figure G.1: Equivalent circuit showing DUT and parasitic elements. .............................. 141
Figure G.2: (a) DUT (b) open dummy and (c) short dummy. ........................................... 141
Figure H.1: Oscillator single ended output including the effect of extracted additional
integrated internal and external bond pad capacitances..................................................... 144

viii

ABSTRACT
This work presents the design and implementation of CMOS LC voltage controlled
oscillators. On-chip planar spiral inductors and PMOS inversion mode varactors were
utilized to implement the resonator. Two voltage controlled oscillators (VCOs) were
realized as a part of this work, one designed to operate at 1.1 GHz while the second at 1.8
GHz. Both VCOs were implemented in a scalable digital CMOS process, with the former in
a 1.5 m CMOS process and the latter in a 0.5 m technology. A simulation based
methodology was adopted to arrive at a simple model used to model the metal and
substrate related losses responsible for deteriorating the integrated inductors performance.
Geometry based optimization techniques were utilized to arrive at an inductor geometry
that ensures reasonable quality factor. In addition to the core VCO structure a host of test
structures have been incorporated in order to carry out two-port network measurements in
the future. Such measurements should enable one to gain a greater insight into the
integrated inductor and varactors performance.

ix

CHAPTER 1
INTRODUCTION
1.1 Motivation
The last decade has witnessed a monumental growth in the communications industry.
A significant part of this growth has been fuelled by an invigorated demand to stay
connected using multiple forms of wireless communication. Radio frequency integrated
circuits (RFICs), which were often relegated to niche industries like the military and cable
television in the past, are now at the heart of the burgeoning communication industry [1]. A
compendium of devices that these circuits bolster includes: pagers, global positioning
system (GPS) receivers, cellular telephones, wireless local area network (WLAN) routers
and a host of wireline transceivers [2]. Low-power, low-cost and high volume have for
long been the nom de jeu in the integrated circuit industry. Digital integrated circuits have
relied on the high levels of integration and scalability that CMOS processes have offered to
up the ante in performance metrics, while maintaining comprehensive pricing advantages.
On a similar footnote one can then concur, that CMOS would be the technology of choice
to implement radio frequency (RF) designs. Combining digital and RF functionality on a
single CMOS die further corroborates the realization of complex System-On-Chip (SOC)
designs [3]. Immediate benefits of such complex levels of integration can be witnessed in
reduced target form factors and cheaper wireless products. However, the adoption of
CMOS as the technology of choice for RF designs has been blemished by limitations
inherent to the process. Although, sub-micron NMOS and PMOS devices demonstrate
plausible RF characteristics like high short circuit unity current gain frequency (ft) and
1

maximum unity power gain frequency (fmax), [4], the low resistivity substrates used in their
fabrication spawn several intriguing problems for RF circuits. In addition to a marked
reduction in the quality factor of on- chip passive elements, low substrate resistivity
complicates the isolation of digital and RF circuits from one another. An impending
offshoot of such high levels of integration is the susceptibility of RF circuits to the noise
induced by digital circuits residing in a similar integrated circuit (IC) environment. The
resulting digital noise problem is compounded by high amplitude (full rail-to-rail) swings
characteristic of most logic circuits, reiterating the need for robust RF circuitry.
Voltage Controlled Oscillators (VCOs) constitute a critical component in many RF
transceivers and are commonly associated with signal processing tasks like frequency
selection and signal generation. Most signal processing systems rely on frequency or time
reference signals. Wireless and wired transmitters often modulate the baseband message
signal to a different part of the available spectrum to achieve: better propagation
characteristics, multiplexing of several messages, and ultimately exploiting the full
capacity of communication channels. In contrast, receivers downconvert these modulated
signals through a process of demodulation. Likewise, digital circuits synchronize their
operations using a clock signal as a time reference. At low frequencies, quartz crystals
working as resonators serve as accurate fixed frequency or time references on account of
their stable properties. However, in the realm of high frequency operation, crystal
resonators experience severe performance degradation due to limitations in their material
properties.
RF transceivers of today require programmable carrier frequencies, and rely on phase
locked loops (PLLs) to accomplish the same. These PLLs embed a less accurate RF

oscillator in a feedback loop whose frequency can be controlled with a control signal.
VCOs form an integral part of such a feedback loop. The resulting VCO output frequency is
then locked to an accurate low frequency reference. A typical PLL implementation is
shown in Fig. 1.1. Numerous evolutions and growing application demands necessitate the
realization of VCOs with center frequencies in the GHz range.
In the wireless application space, superior propagation characteristics and larger
bandwidth availability in the 1- 2 GHz range has resulted in a robust standardization of
digital cellular systems worldwide. Nearly all cellular handsets used in this spectrum
employ accurate GHz VCOs. Voltage controlled oscillators have continued to evolve over
the years [5] owing to innovations in design, process technology and packaging. VCOs
spanning the entire gamut, ranging from discrete-component tube and transistor based to
the modern monolithic versions (Fig. 1.2) have been employed in a variety of
communication systems. However, the viability of monolithic integration of VCOs in
RFICs has been made possible largely due to the shrinking sizes of active devices like
transistors, and passive devices like capacitors and inductors. The first instance of a
monolithic VCO to appear in literature dates back to 1992 [6]. This implementation served
as a precursor to several other monolithic VCOs to be reported in the literature of the late
nineties [7-9]. The stated works serve as an inspiration for the work in this thesis, which
will aim to study the implementation of a CMOS LC voltage controlled oscillator in a 1.5
m CMOS process and its subsequent extension to a 0.5 m CMOS process.

1.2 Organization of Thesis

The thesis is organized in a manner that best assists the reader in his effort to develop
an intuition for CMOS LC voltage controlled oscillators. Chapter 2 provides an insightful
3

Figure 1.1: Block diagram of a typical Phase Locked Loop (PLL).

Figure 1.2: Evolution of VCO technology (adapted from [5]).

overview of the principle of the negative transconductance oscillator theory. It begins with
an overview of the oscillator operation, and mentions about the different topologies
available to implement -Gm oscillators. Chapter 3 sheds light on the design and
implementation of on-chip spiral inductors. The general loss mechanisms associated with
an on-chip inductor are explained and a simple equivalent inductor model is presented.
Chapter 4 reviews the topologies available for MOS varactors, and describes the design of
an inversion mode pMOS varactor. Chapter 5 draws upon the design of integrated
inductors and varactors presented in the previous chapters, and puts them in context of the
overall voltage controlled oscillator. The design and implementation of the final VCO core
in a 1.5 m CMOS process is presented. An extension of this design to a 1.8 GHz VCO
core, designed and implemented in a 0.5 m CMOS process is then presented. Chapter 6
concludes the thesis by suggesting ideas for future work and enhancement.

CHAPTER 2
NEGATIVE TRANSCONDUCTANCE OSCILLATOR
THEORY
In this chapter, an overview of negative transconductance (-GM) CMOS oscillators is
presented. An attempt is made to understand the concept of negative resistance with
regards to a simple LC tank circuit. Several -GM oscillator topologies are examined at
length for their individual merits and demerits; with a heightened focus on the cross
coupled differential topology, the choicest implementation style adopted for a majority of
the designs in this thesis. This chapter serves as a precursor providing all the background
necessary for developing an intuition for the LC tank circuit and oscillator designs
presented in the chapters to follow.

2.1 Overview of Oscillator Operation

An electrical oscillator generates a periodic time varying signal with the application
of DC power. The underlying self-sustaining mechanism of the circuit allows the inherent
system noise to develop into a full blown periodic signal. An oscillator can be represented
as a two-port network, a feedback system or as an interconnection of two one-port circuits,
with the selection of the equivalent network representation being a matter of the designers
discretion and amenity if any in the accompanying circuit analysis. The proverbial
approach is to represent any oscillator as a simple linear feedback system (Fig. 2.1) [10],
with its overall transfer function expressed as:
Y (s)
H ( s)
=
X ( s) 1 H ( s)

(2.1)

where X(s) and Y(s) denote the frequency domain representations of the input, x(t) and
output, y(t) respectively; while H(s) is the frequency domain counterpart of the systems
impulse response, h(t).
The system exhibits sustained oscillations at a frequency s0 if H (s 0 ) = +1 and the
oscillation amplitude remains constant if s0 assumes a purely imaginary value, i.e.,
H (s 0 | j 0 ) = +1 . Consequently, for steady state oscillations to occur at frequency (0),
two conditions must be satisfied: (1) Loop gain, |H (j0)|, must be equal to unity and (2)
the total phase shift around the loop, H (j0), must be equal to zero or 180 . The above
conditions are more commonly known as Barkhausens criteria.
RF oscillators in particular employ a frequency selective network (Fig. 2.2) [10],
customarily an LC tank, as part of the feedback loop to stabilize their oscillating frequency.
Oscillators are often characterized as feedback circuits, where in, the feedback loop is
closed around a two port network. The aforementioned method of characterizing oscillators
is more commonly referred to as a two-port model. In contrast, the one-port paradigm
represents the oscillator as two interconnected one-port networks, an active network and a
resonator respectively (Fig. 2.3 - 2.4) [10]. The resonator is modeled as a parallel R-L-C
network with Rp constituting the parasitic resistance associated with a simple LC tank. This
model incorporates the idea that, an active network contributes an impedance of -Rp which
balances the equivalent parallel resistance, Rp of the resonator. From an energy standpoint,
the active circuit replenishes the energy dissipated periodically in Rp, facilitating sustained
oscillations.

Figure 2.1: Simple linear feedback system.

Figure 2.2: Illustration of the feedback system with a frequency selective network.

Figure 2.3: One port view of an oscillator.

Figure 2.4: Equivalent LC resonator circuit.

2.2 LC Oscillator Topologies

Most discrete RF oscillators have relied on a single active device topology for their
implementation. The traditional disposition is a case-in-point approach in meeting the
needs of most systems designed as an interconnection of discrete components, these
include: (1) reduced noise levels, and (2) lower system costs. It is possible to realize
oscillators in CMOS technology by adopting single active device topologies such as the
Hartley or Colpitts; however most CMOS LC oscillators have relied on a differential or
cross coupled approach. In order to abet the reader in his understanding of the underlying
design principles, both single transistor and cross coupled transistor topologies will be
discussed in this section.

2.2.1 Single Transistor Topology

In concurrence to the feedback model of the oscillator discussed previously, a
single transistor oscillator can be envisioned as an LC tank connected at the drain of the
transistor (FET) with the feedback signal applied to the gate or the source. It can be
recalled, that an LC tank is merely a parallel network of an inductor and a capacitor. At
resonance, the tanks impedance assumes a purely real value implying that the phase
difference between the current and voltage is zero. The zero phase difference is achieved if
the feedback signal is returned to the source terminal of the transistor. The resistive loading
effect of 1/gm observed at the source terminal is an immediate offshoot of the direct
feedback path between the tank and the transistors source terminal (Fig. 2.5 (a)) [10]. The
resulting loading effect is responsible for a degradation of the tanks loaded quality factor
(Q). Under these circumstances, the loop gain deteriorates to a value less than unity, failing
to maintain oscillations. Transforming the source impedance (Fig. 2.5 (b)) [10] to a higher
10

value helps overcome the loading effect and thereby maintains conditions favorable for
sustained oscillations. The required impedance transformation can be accomplished by
either inductive or capacitive dividers. The Colpitts oscillator (Fig. 2.6(a)) employs a
capacitive divider while its Hartley (Figure 2.6(b)) [10] counterpart utilizes a divider that
is inductive. The equivalent resistance of the Colpitts and Hartley configuration is given by
the expressions: (1 + C1 C 2 ) g m and (1 + L2 L1 ) g m , respectively.
2

The resonance frequency is expressed as, r = ( Leq C eq ) 1 , where Leq and Ceq

represent the equivalent tank inductance and capacitance, respectively. The equivalent
parallel resistance of the tank given by, R p = ( Leq r ) 2 / Rs where Rs models the inductor
losses as a series resistance. Rp scales proportionally in relation to the equivalent
inductance, Leq and at resonance when the tank is purely resistive, the voltage swing for a
given bias current increases by the same factor as impedance, Rp.
However, maximizing the inductance value necessitates two important tradeoffs,
namely: (1) a decrease in the self resonating frequency of the inductor, approaching the
oscillation frequency of interest and (2) a reduction in the oscillator tuning range owing to
a dominance of the tank capacitance by device parasitics. Transistor M1 being the primary
source of noise in oscillators should be scrupulously optimized in terms of sizing and bias.
Thermal noise associated with the gate and drain of the transistor can be minimized by
increasing the device size and decreasing the bias current of the transistor. While the
former remedy increases the parasitic capacitances, the latter lowers the voltage swing reemphasizing the need for a suitable design compromise.

11

(a)

(b)

Figure 2.5: (a) Direct feedback from drain to source, (b) Feedback in presence of an
impedance transformer.

(b)

(a)

Figure 2.6: (a) Colpitts oscillator (b) Hartley oscillator .

12

The single transistor topologies discussed so far are marred by a host of

shortcomings. First, the ratio of the required inductors and capacitors should be large in
order to offset their effect on the loaded Q of the tank. Second, single transistor topologies
provide a single ended output that fails to aid most modern day wireless transceivers which
rely on double balanced mixers operating on differential signals. Lastly, the common mode
noise from the supply and the substrate adversely affect the phase noise of the integrated
oscillator. A differential topology that helps to overcome the limitations associated with the
single transistor approach will be discussed in section to follow.

2.2.2 Cross-Coupled Differential Topology

It is evident from the discussion in the previous section, that, the signal fed from the
drain to the source of the transistor must pass via an impedance transformation network to
preclude a degradation of the loaded Q of the LC tank. The passive divider network used in
the Hartley and Colpitts configuration is responsible for achieving the desired high
impedance transformation. An active buffer (Fig. 2.7 (a)) [10], in place of the passive
divider network, is an equitable option in facilitating the impedance transformation. A
source follower (Fig. 2.7 (b)) [10] can be used as a buffer to present high impedance to the
tank. The gate of transistor M1 is tied to VDD to maintain the same dc voltage as the gate of
M2, assuming both M1 and M2 are identical. Incorporating a second inductor into the
existing circuit adds the capability to operate differentially. This configuration is more
commonly known as a cross-coupled differential oscillator or a negative gm oscillator
(Fig. 2.7 (c)) [10].
Considering the cross-coupled feedback oscillator as a one-port representation, the negative
resistance seen at the drain of M1 and M2 can be computed as [11]:
13

Rin =

2
gm

(2.2)

From the above relation it can inferred, that |Rin| should be less than or equal to the
equivalent parallel resistance of the tank in order to achieve sustained oscillations.

2.2.3 NMOS or PMOS Cross-Coupled Oscillators

To better appreciate the working of the cross-coupled CMOS oscillator it is useful
to first understand the working of simple NMOS and PMOS only oscillator circuits.
Depending upon the type of the MOS device type and the tail current source four different
configurations emerge, as illustrated in Fig. 2.8 (a) (d). The DC bias point for this circuit
(Fig. 2.8 (a)) is established by setting VGS and VDS equal to VDD. Under these conditions, the
NMOS transistors are driven to the realm of saturation; the drain current is then expressed
as:
I DS =

n C ox W
2

2
(VGS Vth )
L

(2.3)

n is the surface mobility of the electrons in an NMOS transistor, Cox is the gate oxide
capacitance per unit area and Vth is threshold voltage. Considering, the low frequency
model of the MOSFET, the transconductance can be calculated as:
GM =

I DS
W
|Qpo int = n C ox (VGS Vth )
VGS
L

(2.4)

The magnitude of the negative resistance seen looking into the NMOS transistors equals
2 G M , and the ratio of the magnitude of the negative resistance to the equivalent parallel

resistance (RP) is more often known as the startup safety factor. It is generally a well
established practice to design integrated oscillators with a safety factor of at least 2.

14

(a)

(b)

(c)

(d)

Figure 2.7: (a) One transistor oscillator with active buffer in feedback loop, (b) with a
source follower as active buffer, (c) cross-coupled differential oscillator and (d) circuit to
estimate the negative resistance of the cross-coupled pair.

15

PMOS cross-coupled pairs have been employed in VCOs for their low noise
characteristics [11]. Flicker noise of a PMOS transistor is about 10 times smaller than its
NMOS counterpart of similar dimensions.
The PMOS only circuit (Fig. 2.8 (b)) shares a great deal of similarity with the
NMOS only complement. However, since the mobility of holes (p) is lower than
electrons, PMOS devices have to be twice the size of NMOS devices to achieve a similar
transconductance performance. A careful observation of the simple NMOS and PMOS only
circuits sheds light on an important shortcoming. From equation (2.4) it can be seen that
the transconductance is controlled solely by the size of the devices, thereby lacking a
flexible approach in establishing control of the transconductance. In order to achieve a
desirable control over the negative resistance and evidently, the oscillation amplitude, a
current mirror is generally adopted to limit the supply current. The bias current that flows
through current mirror is referred to as the tail current and sets the total power dissipation.
However, in some cases it has been reported that it may be advantageous to entirely
eliminate the tail current source [12] to achieve better phase noise performance. As a
corollary, it should be noted, that the tail current source aids a designer in achieving a
compromise between phase noise performance and power dissipation.

2.2.4 CMOS Core Cross-Coupled Differential Oscillator

The CMOS oscillator circuit employs both NMOS and PMOS cross-coupled pairs (Figures
2.9 (a) and (b)). In a simple CMOS -GM oscillator the same bias current flows through both
the NMOS and PMOS devices, consequently for the same power consumption the
configuration yields a negative resistance twice as large.

16

(a)

(b)

(c)

(d)

Figure 2.8: (a) NMOS-only oscillator, (b) PMOS-only oscillator, (c) NMOS-only oscillator
with a tail current source and (d) PMOS-only oscillator with a tail current sink.
17

The total negative resistance of the CMOS pair can be expressed as a parallel
combination of the NMOS and PMOS pairs negative resistance, Rinn and Rinp, (Fig. 2.9 (c))
as:
Rnegative = Rinn // Rinp =

Gmn

2
+ Gmp

(2.5)

The CMOS differential topology is accompanied by a fair share of drawbacks

characteristic of the configuration in use. An important difference between the
complementary -GM oscillator and its NMOS or PMOS only counterparts is in limiting the
differential voltage swing. In complementary oscillators, the voltage swing is essentially
limited by the supply voltage and the bias current, while, in NMOS or PMOS-only
versions, solely by the bias current. NMOS or PMOS only circuits exhibit AC voltage
swings that exceed VDD; however in complementary oscillators such voltage sojourns are
limited by PMOS transistors driven into cutoff, restricting the bias current to NMOS
devices. Also, the use of more than two active devices other than only the NMOS or PMOS
pairs increases the number of noise sources and the parasitics, thereby resulting in
detrimental effects on the phase noise and frequency performance tuning characteristics.

2.3 Oscillator Phase Noise

2.3.1 Definition of Phase Noise
Phase noise is an important characteristic of any oscillator and an important performance
metric of RF VCOs and PLLs in turn. Characterized in frequency domain, it is an
important indicator of an oscillators frequency stability.

18

(b)

(a)

(c)
Figure 2.9: (a), (b) CMOS cross-coupled differential oscillator without and with tail current
source and (c) calculation of total negative resistance of CMOS differential topology.
19

In time domain, the output voltage of any oscillator can be quantified as [13]:
Vout (t ) = A sin( 0 t + )

(2.6)

with A the amplitude, 0 the frequency and the fixed phase. An ideal oscillator complies
with a frequency spectrum consisting of Dirac impulses centered at the frequencies 0
(Fig. 2.10 (a)). However, in actuality, real world oscillators are implemented using
inherently noisy devices. The output of a real oscillator can be better expressed as:
Vout (t ) = A(t ) sin( 0 t + (t ))

(2.7)

where A(t) and (t ) are functions of time. Consequently, the frequency spectrum of the
output voltage, Vout, consists of noise sidebands in proximity of the oscillation frequency,
0 (Fig. 2.10 (b)). This phenomenon is called the phase noise. It is often quantified by
considering a unit bandwidth at an offset of from the carrier, 0 (Fig. 2.11). For this
offset, the phase noise is computed as the ratio of the noise power in the side band to the
carrier power. It is calculated in dBc/Hz and expressed as:
Noise Power in unit bandwidth at frequency, 0 +
L( ) = 10 log

Carrier Power at frequency, 0

(2.8)

Fig. 2.12 is a typical plot of the phase noise, L( ) of an oscillator as a function of the
offset frequency, on a logarithmic scale.
A linear time invariant model to characterize the phase noise was presented by Leeson
[14]. The phase noise predicted by this model can be expressed as:
2 FKT
L( ) = 10 log
Ps

2

1 f 3
0
1 +
1 +

2QL

20

(2.9)

(a)

(b)
Figure 2.10: (a), (b) Ideal and Real oscillator spectrum.

21

where F is an empirical device excess noise factor, K is the Boltzmanns constant, T is the
absolute temperature, PS is the average power dissipated in the tank, QL is the loaded
quality factor of the tank, is the offset from the carrier frequency 0 , and

1 f3

is the

corner frequency between 1 f 3 and 1 f 2 regions. The lack of access to accurate values of
the empirical parameters F and

1 f3

hampers the utility of Leesons model in predicting the

phase noise accurately. A more accurate time domain model proposed by Hajimiri and Lee
[13] offers a simple yet accurate technique for predicting the phase noise of oscillators. The
model is given by the equation:

KTReff [1+ A] (0 )2
L( ) =

V02 2

(2.10)

where Reff is the equivalent series resistance, V0 is the peak oscillation amplitude and A is
the excess noise factor. The parameter, A is generally set to the oscillator startup safety
factor. The equivalent series resistance, Reff can be derived from the equivalent circuit
representation of the LC oscillator (Figure 2.13), and is expressed as:
Reff = RL + RC +

1
(RP C 02 )

22

(2.11)

Figure 2.11: Illustration of phase noise in an oscillators output spectrum.

Figure 2.12: Typical phase noise plot for an oscillator.

23

Figure 2.13: Equivalent circuit representation of an LC oscillator.

24

CHAPTER 3
ON-CHIP INDUCTORS
3.1 Background
The gargantuan growth in commercial wireless communication systems namely
cellular, personal communication services (PCS), wireless local area networks (WLANs),
and global positioning systems has largely been dictated by an intense consumer demand
for mobility, seamless tether free connectivity, and a continued interest in voice and data
intense applications. In order to keep up with the insatiable consumer demand and maintain
comprehensive

pricing

and

size

advantages,

modern

mobile

devices

require

multifunctional, highly integrated monolithic radio frequency integrated circuits (RFICs).

Traditionally, inductors, an essential component of most RFICs have been incorporated as
discrete off-chip components (often as small surface mount parts). Although, such
inductors have high quality factors, it is highly desirable to eliminate as many discrete
components as possible. The reduced board level complexity and component count is
evident in a direct reduction of associated costs. As an alternative to off-chip inductors,
some radio frequency integrated circuits have utilized bonding wires as inductors [15].
While bond wire inductors can have relatively high Q factors (of the order of 50), however,
on-chip integrated inductors are preferred due to ease of packaging.
Monolithic inductors fabricated as simple planar spirals are now widely used in RF
designs. The inductance of a monolithic inductor is defined solely by its geometry. Tight
geometric tolerances inherent to most modern photolithographic processes ensure small
variations in the performance of monolithic inductors.

25

Unlike standard silicon technologies, GaAs processes are more beneficial in the
fabrication of monolithic inductors. A nearly perfect insulator like characteristic ( ~ 108
cm) and the metallization used (often thick electroplated gold, ~ 4.1 x 107 S/m) befits
them for the fabrication of monolithic inductors. In contrast, silicon substrates demonstrate
low values of substrate resistivity (typically 10-100 cm for BJT and BiCMOS processes
and 0.01 cm for digital CMOS processes). Furthermore, aluminum used for metallization
in silicon processes suffers from a low value of thin film conductivity. However, standard
digital CMOS processes continue to offer substantial cost advantages unlike their GaAs
counterparts, hence accounting for the renewed effort by RFIC designers to fabricate
monolithic inductors using well established digital CMOS processes. A comprehensive
exploration of the design of monolithic inductors in a generic digital CMOS process
constitutes the topic of discussion in the ensuing chapter.

3.2 Integrated Inductor Geometries

A planar spiral inductor can be laid out in numerous ways; however the circular
spiral with least area utilization, reduced series resistance and the largest amount of
conductor lines for a given area, conclusively outperforms other inductor geometries. This
structure however is seldom employed in integrated circuits due to an inherent limitation in
many mask generation systems. A majority of these systems restrict themselves to
Manhattan style geometries that contain well defined 90 degree angles and additionally, 45
degree structural variants. Despite its low quality factor (Q), the square spiral is the most
widely used geometry in laying out integrated spiral inductors owing to its flexible
geometric structure and propensity for seamless simulation. In this thesis, the square spiral
was chosen as the most preferred geometry in laying out the inductors.
26

A typical square spiral is illustrated in Fig. 3.1. The most relevant design variables
for any given square spiral include: length or outer diameter (dout), trace width (W), number
of turns (N) and the interwinding space (S). Likewise, the most influential process
parameters include: the substrate resistivity () and the metal conductivity (). While, the
design parameters aid the designer in approximating the inductance value, process
parameters abet in the estimation of performance metrics like the quality factor. For a
comprehensive study of square spiral inductors the reader is directed to the literature in
[16 - 18].

3.3 Loss Mechanisms in Inductors

It is imperative to understand the underlying loss mechanisms in an effort to design
high-Q integrated inductors. An on-chip inductors performance is largely influenced by
design parameters such as shape, width, thickness and diameter, and equally by the
materials properties used in implementation. Consequently, the losses involved can be
broadly classified into two categories, namely: substrate losses and metal losses. The metal
losses encompass: the finite conductivity of the metal, current crowding at edges owing to
the skin effect, and proximity effects as a result of a neighboring metal layer. On the other
hand the substrate losses incorporate the parasitic, eddy current and radiation effects.

3.3.1 Metal Losses

Inductors are generally implemented using metal layers with a finite conductivity;
aluminum (Al) in the case of conventional Si processes and gold in GaAs processes, with
conductivities of 2.5 x 107 and 4.0 x 107-1m-1, respectively. Conductivity and geometry of
the inductor metal layers have a strong influence on the quality factor of the resulting

27

Figure 3.1: Square spiral with typical geometric parameters.

28

inductor. Resistive losses in the metal windings are an immediate consequence of the finite
metal layer conductivity.
DC resistance of the spiral can be easily computed as the product of sheet resistance
and the number of squares in the spiral. It is more commonly expressed as:
Rs =

l
wt eff

(3.1)

where l, w, and teff represent the length, width, resistivity and effective thickness of the
metal layer. However, at higher frequencies the resistance of the spiral increases due to
skin effect and current crowding at the corners [19]. The introduction of copper
metallization (which enhances the conductivity), and usage of thick metal layers has
demonstrated improvements in the quality factor of the integrated inductor [20].
Additionally, multiple levels of metallization can be used to create the spiral with the
ultimate goal of reducing the DC winding resistance. However, one could state
convincingly and with an absolute certainty that most integrated inductors fall short of
being ideal. While the resistance increases with frequency, substrate loss mechanisms
begin to play significant roles in degrading the inductor quality factor.

3.3.2 Substrate Losses

In conventional Si processes the substrate has an overbearing influence on the
quality factor, and evidently is a major source of loss and frequency limitation. The Si
substrate is conductive in nature unlike its GaAs counterpart, with resistivities in the
neighborhood of 10-20 cm for Si and 106-107 cm for GaAs, respectively. The
conductive nature of the Si substrate begets multiple loss mechanisms. Electric energy is
coupled to the substrate owing to a displacement current (Fig. 3.2). The displacement
29

current flows via the substrate to nearby grounds either at the upper surface or at its lower
opposite. It can be recalled that, in most digital CMOS processes the substrate is a heavily
doped p-type material and is tied to the ground potential. Moreover, the windings of the
spiral are separated from the substrate by a thin insulating layer of silicon dioxide (SiO2).
Hence, the substrate can equivalently be modeled as a grounded resistor in series with a
capacitor (Fig. 3.3). The current flowing through the lossy capacitor generates ohmic
losses. Furthermore, the lossy capacitor adversely affects the quality factor of the resulting
inductor by permitting interaction of RF currents and the substrate. Increased values of the
parasitic capacitance manifest in reducing the self resonant frequency of the resulting
spiral. Capacitive losses associated with the spiral can be minimized by decreasing the area
of the constituting metal lines which, in turn serves to increase the series resistance of the
inductor. It is generally an accepted practice to use wide inductor lines to compensate for
low values of metallization conductivity.
Losses emanate from a coupling of the magnetic field between the substrate and the
windings of the spiral.
From Faradays law it can be inferred that this time-varying magnetic field induces an
electric field in the substrate. The resulting electric field sets up an image current that is
confined to the substrate and flows in a direction opposite to the winding current
immediately above it (Fig. 3.4). These image currents account for a significant portion of
the larger substrate related losses in CMOS integrated inductors. A good analogy for the
current situation is one of a transformer, where windings of the spiral constitute the
fictitious transformers primary winding while the substrate represents its secondary. In
addition to the substrate, the magnetic field penetrates well into the windings of the spiral

30

Figure 3.2: An illustration of substrate loss mechanisms.

Figure 3.3: Substrate related capacitive losses.

31

further exacerbating the associated losses. It can be recalled from the previous discussion
that the series resistance of the inductor can be minimized by using wider lines; however
larger inductors result in deeper penetrating magnetic fields thereby negating the benefits
of wider lines. Alternatively, a better remedy to counter substrate effects would be to etch
the substrate residing below the inductor. However, such extraneous post processing is non
standard to the established CMOS process, and is hence discouraged.
Three dimensional simulations of the spiral windings yield interesting results [19].
Eddy currents are generated in the inner conductors of the spiral (Fig. 3.5). When the spiral
is populated with turns up to the center of the coil, the emerging magnetic field (Bcoil) is no
longer confined just to the center of the spiral but extends well into its inner turns.
According to Faraday-Lenzs law, the transient nature of the magnetic field induces an
electric field which, in turn is responsible for circular eddy currents in the inner turns. The
magnetic field (Beddy) associated with these eddy currents opposes the original magnetic
field (Bcoil) thereby, reducing the total magnetic field (Bcoil + Beddy). The reduced net
magnetic field necessitates a reduction in the inductance value at high frequencies. Circular
eddy currents in the inner turns can be attributed to a non uniform current density. The
current in the inner side (Ieddy) of the inner turns tends to be in phase with the coil current
(Icoil) leading to a larger than average current density. On the outer side, the eddy and coil
currents tend to cancel each other decrementing the current density. This phenomenon is
commonly known as current crowding [19, 21]. On a similar token, it can be safely
concluded that the inner turns of the inductor contribute excessively to the associated losses
while orchestrating a nominal improvement in the actual inductance. It is therefore a safe
design practice to use hollow spirals to prevent deterioration of the quality factor [19].

32

Figure 3.4: Generation of substrate currents on planar inductors.

Figure 3.5: Generation of eddy currents in inductors.

33

3.4 Inductor Model

The usage of on-chip inductors in Si based RFICs is limited largely due to the
unavailability of a precise inductor model. Over the years, several studies [22 - 24] have
concentrated on the intriguing proposition of accurately modeling the complex phenomena
associated with integrated inductors. High frequency phenomena like skin effect, current
crowding effect and induced eddy currents, compound the task of physical modeling. In
this thesis, a simplified two port model was used to characterize the spiral inductor
incorporated in all VCO designs. The underlying model [22, 25] (Fig. 3.6) comprises of
the following network elements: series inductance (Ls), series resistance (Rs), coupling
capacitance (Cc), which models the capacitive coupling between the spiral and the
underpass, oxide capacitance between the spiral and the substrate modeled by Cox, and
substrate resistance and capacitance RSi and CSi, respectively. RSi can be attributed to the
conductivity of silicon, and is largely a consequence of majority carrier
concentration. Likewise, CSi represents high frequency capacitive effects inherent to most
semiconductor materials. The substrate resistance and capacitance are proportional to the
area occupied by the spiral, and therefore are found to scale with length and width of the
spiral.The substrate related parasitic components Cox, CSi and RSi can be equivalently
lumped to the series combination of RSub and CSub (Fig. 3.7).

3.4.1 Series Inductance (LS)

The exact calculation of the inductance of a planar square spiral inductor can be
accomplished using field solvers (Maxwells method). 3D field solvers give exact values
but are computationally intensive and are hence, not used in this thesis. The inductance can
be computed using the Greenhouse theory and a host of other simpler, empirical
34

expressions. This section adopts the following sequence in discussing the methods involved
in estimating the planar spiral inductance: Greenhouse method [26] of estimation will be
considered first from a legacy standpoint and its added computational lucidity, followed by
a discussion of recently published expressions that have demonstrated good accuracy in
predicting the spiral inductance.
The Greenhouse algorithm for determining the overall inductance involves
computing the self inductance of each conductor segment, and the positive and negative
mutual inductances between all possible pairs of conductor segments. The self inductance
of a straight conductor is expressed as follows [26]:
2l
AMD
L = 0.002l ln
+ T ,
1.25 +
l
4
GMD

(3.2)

where L is the self inductance in H, l is the conductor length in cm; GMD and AMD
represent the geometric and arithmetic mean distance, respectively. Since, the top layer of
metal is used to create the spiral, it can be considered as a thin film inductor in which case,
equation (3.2) assumes the form [26]:
2l
a + b
L = 0.002l ln
+ 0.50049 +
,

3l
a + b

(3.3)

where a and b are the rectangular dimensions of the cross section. The magnetic
permeability is equal to 1, and the skin depth phenomenon has little effect on thin films.
T is equal to 1 for microwave frequencies.
In the case of rectangular or square planar coils, straight conductor segments are
parallel to other conductor segments; accordingly, the mutual inductance between these
parallel tracks contributes to the total inductance of the coil. Fig. 3.8 illustrates the top view
of 2-turn (8-segment) rectangular spiral inductor.
35

Figure 3.6: Illustration of conventional model [22, 25].

Figure 3.7: Equivalent model.

36

The spiral inductor is constructed by using the top metal layer for creating the
spiral, and the bottom metal layer for routing the underpass. The inductance of the spiral
under consideration is equal to the sum of the self-inductance for each segment in the coil
plus the mutual inductance; which is determined by the geometry, and the phase
relationship between the currents carried by those lines. Fig. 3.9 illustrates the model used
in analyzing the voltage and current relationships in two conductors carrying in-phase
currents.
V1 = I 1 jL + I 2 jM

(3.4)

V 2 = I 2 jL + I 1 j M

(3.5)

For in phase current, V1 = V2. Manipulating equations (3.4) and (3.5) the impedance
of coil 1 can be calculated as:
Z in = j ( L + M )

(3.6)

Therefore, the inductance of the conductor increases by a factor M, where M is the

mutual inductance between the two conductors. In the case of out-of-phase current, the
inductance of the conductor decreases by a factor M as V1= - V2. In general, the inductance
of a conductor can be expressed as,
L = Lself M

(3.7)

The mutual inductance between two conductors is a function of the length of the
conductors and the geometric distance between them. Equivalently,
M = 2lQ ,

(3.8)

where, M is the mutual inductance in nH, l is the length of the conductor in cm, and Q is
the mutual inductance parameter.

37

Figure 3.8: Top view of a 2-turn (8-segment) rectangular spiral.

Figure 3.9: Model of two conductors carrying in-phase and out-of-phase currents.

38

The mutual inductance parameter, Q is computed as [26]:

l
l2
Q = ln
+ 1+
(GMD) 2
GMD

(GMD) 2 GMD
1

+
+

l
l2

(3.9)

In this equation GMD, the geometric mean distance between the two conductors, is
approximately equal to the distance between the track centers. The exact value of GMD
may be calculated from the following equation [26]:

1
1
1
1
1

ln GMD = ln d
+
+
+
+
+
....

2
4
6
8
10
d
d
d
d
12 d

60
168
360
660
w

w
w
w
w

(3.10)

where, d is the center-to-center separation between the conductors, and w is the width of
the conductors. In the case of two parallel conductors with lengths j and m, the total mutual
inductance can be represented by [26],
2M j ,m = ( M m + p + M m + q ) ( M p + M q )

(3.11)

and the individual M terms are calculated using equation (3.8) and the lengths
corresponding to the subscripts; that is,

M m + p = 2l m + p Qm + p = 2(m + p)Qm + p

(3.12)

The total inductance of the spiral can be calculated as the sum of the self
inductances of all the straight segments and all the mutual inductances, positive and
negative. It should be noted that the mutual inductance is positive when current flow in two
conductors is in the same direction, and negative for current flow in opposite directions.
The total inductance of the spiral (LT) is then expressed as,

LT = L0 + M + + M

39

(3.13)

where, L0 is the self inductance of all the straight segments, M+, the total positive mutual
inductance due to in-phase current and M-, the total negative mutual inductance due to outof-phase current. For instance, L0, M+ and M for the two-turn spiral of Figure 3.8 is given
by,

L0 = L1 + L2 + L3 + L4 + L5 + L6 + L7 + L8

(3.14)

M + = 2(M 1,5 + M 2,6 + M 3, 7 + M 4,8 )

(3.15)

M = 2(M 1,3 + M 1, 7 + M 2, 4 + M 2,8 + M 3,5 + M 4,6 + M 5,7 + M 6,8 )

(3.16)

The Greenhouse method offers sufficient accuracy and reasonable speed, but fails
to provide an inductor design directly from specifications and is cumbersome for an initial
design pass. Recently new expressions have emerged for computing the inductance of
square, hexagonal, octagonal and circular planar inductors which are given by equations
(3.17), (3.18) and (3.19). The first expression, equation (3.17) is based on a modification of
an expression developed by Wheeler; the second expression, Equation (3.18) is derived
from electromagnetic principles by approximating the sides of the spirals as current-sheets
[27]; and the third, equation (3.19) is a monomial expression derived from fitting to a large
database of inductors [27]. All three expressions are simple, accurate, and possess error
margins of 2-3 percent. These attributes corroborate their utility in design and synthesis of
planar inductors. A comprehensive review of these expressions can be found in the
literature [27]. Equations (3.17) to (3.19) are described in brief for the readers reference.
For a given shape, an inductor is completely specified by the number of turns n, the turn
width w, the turn spacing s, and any one of the following: the outer diameter dout, the inner
diameter din, the average diameter d avg = 0.5(d out + d in ) , or the fill ratio, defined

as = (d out d in ) (d out + d in ) .
40

The original Wheelers formula can be modified for planar spiral integrated
inductors as:
Lmw = K 1 0

n 2 d avg
1+ K2

(3.17)

where is the fill ratio defined previously. The coefficients K1 and K2 are layout dependent
and are shown in Table 3.2. Lmw is the inductance of the planar spiral conductor after
Wheelers modification.
Another simple and accurate and accurate expression for the inductance of a planar spiral
can be obtained by approximating the sides of the spirals by symmetrical current sheets of
equivalent current densities. The resulting expression is [27]
L gmd =

n 2 d avg c1
2

{ln(c

) + c3 + c 4 2 }

(3.18)

where, the coefficients ci are layout dependant and are shown in Table 3.3.
The monomial expression used for computing the self inductance is based on a data
fitting technique. It is useful owing to its accuracy and simplicity, and also for its
applicability in optimizing the design of inductors and circuits containing inductors with
the help of geometric programming. The expression [27] is given by,
3 4 5
1
Lmon = d out
w 2 d avg
n s

(3.19)

where the coefficients and i are layout dependant and given in Table 3.4. A Matlab
program developed to compute the inductance using the above expressions is included in
Appendix A.

41

3.4.2 Series Resistance (RS)

The series resistance Rs represents the metal loss described in section 3.1.1 and is
formulated by equation (3.1). Skin effect and its manifestation on the metallization losses
has been ignored in the calculation of the series resistance. However, one may choose to
estimate skin depth, using the relation,

0 f

(3.20)

where, is the resistivity of the metal spiral, 0 is the free space magnetic permeability and
f is the frequency. The variation of skin depth with the operating frequency is included in
Table 3.1. It is evident from this table and for a metal-2 thickness of 1 m that skin depth
begins to dominate metallization losses for frequencies greater than 8 GHz, and hence
ignored for the current operating frequencies of interest, 1.1 and 1.8 GHz, respectively.

3.4.3 Substrate Parasitics (Rsub, Csub)

The substrate parasitics of an inductor residing on a Si substrate are physically
modeled by the three network elements Cox, CSi and RSi. Cox represents the oxide
capacitance whereas CSi and RSi represent the silicon substrate capacitance and resistance,
respectively. The equivalent substrate parasitics CSub and RSub scale proportionally with the
area of metallization (lw).Therefore [22, 25],
C Sub

1
C unit (lw)
2

(3.20)

RSub

2
( Runit )
lw

(3.21)

where, Cunit and Runit are the unit area substrate parasitic capacitance and resistance,
respectively. Cunit and Runit are themselves functions of substrate resistivity and inter-

42

dielectric thickness. CC only models the capacitance emanating from the overlap of the
spiral and the underpass. Fringing field effect capacitance between the adjacent turns of the
spiral is ignored in the computation of the capacitance, CC.

3.5 Inductor Quality Factor

Quality factor is traditionally defined as the ratio of the energy stored to the energy
dissipated per cycle. Mathematically, this fundamental concept in an inductors context is
abstracted as:
Q = 2

Peak Magnetic Energy - Peak Electrical Energy

Energy Loss in One Oscillation Period

(3.22)

The Q of on-chip inductors is computed using the lumped model (Fig. 3.6) presented in the
previous section. For ease of calculation, the lumped model is converted to a one port
connection, and the oxide and substrate parasitics Cox, CSi and RSi replaced by an equivalent
frequency dependant shunt resistance Rp and capacitance Cp (as shown in Fig. 3.10) while
continuing to preserve the inductor performance characteristics. Rp and Cp are given by the
expressions:
Rp =

C ox2 RSi

RSi (C ox + C Si )
C ox2

(3.23)

1 + 2 RSi2 C Si (C ox + C Si )

C p = C ox
2
2 2
(
)
+
+
1

R
C
C
Si
ox
Si

(3.24)

From the equivalent circuit of Figure 3.11, the peak electrical and magnetic energies, and
the energy lost in one oscillation period can be calculated as,
2

Peak magnetic energy =

43

Vp L

2 RS2 + (L )

(3.25)

Peak electric energy =

VP

(C

+ Cp )

(3.26)

where, Vp is the peak (or maximum) amplitude of the sinusoidal oscillation

2

R
2 V p 1

+ 2 S 2
Energy loss per oscillation period =

2 R p RS + (L )

(3.27)

The resulting quality factor is calculated by substituting equations (3.25)-(3.27) into the
expression for Q defined previously (Equation 3.22).
Q=

L
RS

RS2
2

(
)
1

+
+
L
C
C

C
p
L 2
L

R p + RS 1 +
RS
Rp

(3.28)

Here, the term L RS denotes the magnetic energy stored, and the series loss in the spiral.
The second term in equation (3.28) represents the substrate loss, while the last term
represents the self-resonant factor, which yields the reduction in Q owing to an increase in
the peak electric energy for an increase in frequency. The self resonant frequency for the
inductor 0 can be determined by setting the self resonant factor to zero and solving for
in the resulting equation (3.29).

0 =

RS2

1
(
C C + C p )
1
L(C C + C p )
L

(3.30)

Typically, the inductance and the quality factor of a monolithic inductor are
calculated by converting the measured or simulated S-parameters to Y-parameters, and
using these Y-parameters to determine L and Q. For cases where one side of the inductor is
grounded (i.e. single ended or unbalanced inductor), L and Q are expressed as,

44

Y
L = Im 11
2f

1
Im
Y
Q = 11
1
Re
Y11

(3.29)

(3.30).

3.6 Inductor Simulation Tools

All inductors used during the course of this thesis were designed using the freeware
program Analysis and Simulation of Spiral Inductors and Transformers for ICs (ASITIC)
[28]. Although it is possible to numerically compute the inductance value using the
expressions described previously (equations (3.17) (3.19)), it is an extremely formidable
task to analytically predict the losses associated with an integrated inductor. ASITIC is a
UNIX based program freely available from the University of California, Berkeley. It is a
useful tool to - analyze, model and optimize passive structures employed on conducting
substrates. The tool supports conventional and non-conventional polygon geometries alike.
A set of predefined commands as part of its accompanying arsenal, make the generation of
a spiral inductor of the required dimensions possible. The program references a technology
file which abstracts the substrate carrying the integrated inductor. The technology file
boasts a lucid format for convenient editing, and modification of technology and process
related parameters. A description of the form and structure of the technology file is
included in the section dedicated to the inductor design. All simulation results are reported
in terms of S-parameters which, can in turn be numerically fit into the lumped circuit model
of Figure 3.7.
45

Table 3.1
Variation of skin depth with frequency
Frequency (GHz)
0.1
0.5
1.0
1.1
2.0
3.0
4.0
5.0
6.0
8.0
10.0
15.0
20.0
25.0
40.0
50.0

Skin Depth (m)

8.71740380
3.89854149
2.75668513
2.62839614
1.94927074
1.59157290
1.37834256
1.23282706
1.12541199
0.97463537
0.87174038
0.71177304
0.61641353
0.55133702
0.43587019
0.38985415

Table 3.2
Coefficients for Modified Wheeler Expression [27]
Layout

K1

K2

Square

2.34

2.75

Hexagonal 2.33

3.82

Octagonal

3.55

2.25

46

Table 3.3
Coefficients for Current Sheet Expression [27]
Layout

c1

c2

c3

C4

Square

1.27

2.07

0.18

0.13

Hexagonal 1.09

2.23

0.00

0.17

Octagonal

1.07

2.29

0.00

0.19

Circle

1.00

2.46

0.00

0.20

Table 3.4
Coefficients for Data-Fitted Monomial Expression [27]
Layout

1(dout)

2(w)

3(davg)

4(n)

5(s)

Square

1.62 x 10-3

-1.21

-0.147

2.40

1.78

-0.030

Hexagonal 1.28 x 10-3

-1.24

-0.174

2.47

1.77

-0.049

1.33 x 10-3

-1.21

-0.163

2.43

1.75

-0.049

Octagonal

47

Figure 3.10: Lumped one-port on-chip inductor model.

Figure 3.11: Equivalent circuit of one-port on-chip inductor model.

48

Other accurate planar full wave EM simulators like Sonnet [29] or full 3D finite element
simulation software like Ansoft HFSS [30] could be used for precisely characterizing the
inductor performance. However, such tools were not available during the course of this
thesis, and hence not discussed in this section.

3.7 Inductor Design

All inductors used in this thesis were realized in an iterative fashion for an intended
use in cross-coupled CMOS LC oscillators. The primary objective in the design process
was to design inductors to support the oscillators operating frequency of 1.1 GHz. A tank
circuit with C = 2.2 pF and L = 8.0 nH exhibits a center frequency of 1.1 GHz, and was
accordingly chosen as a starting point in the inductor design. The tank circuit inductance of
8 nH is implemented as a series combination of two inductors, each, with a self inductance
of 4 nH.

3.7.1 Design of 4 nH Inductor

Several inductors were designed and simulated during the course of this study with
variations in the key geometric parameters, namely, the outer diameter, dout varying
between 150 220 m, trace width, W varying between 8 15 m while maintaining an
interwinding space, S of 3.2 m. All inductors were simulated using the two highest metal
levels (i.e. those with the highest conductivity): metal 1 (M1) and metal 2 (M2), available
in a 1.5 m double-poly, 2-metal CMOS process. The vertical dimensions of the process
layers are as indicated in the technology file included in Appendix B. The technology file
in ASITIC incorporates a similar set up for characterizing the process specific parameters
like layer thickness and sheet resistance of various layers. The thickness of first and the
second metal levels M1 and M2, respectively was about 1.0 m while the isolating oxide
49

between metal layers was about 1.5 m. The resistivity of the p-type bulk below the
inductors was 0.1 -cm approximately.
The guidelines listed in [19] proved invaluable in arriving at the final inductor
geometry, and are listed below for the readers reference. Conformance to these guidelines
guarantees a reasonable inductor performance quality factor at the desired value of
inductance and operating frequency. The general design guidelines include:
1) Very wide metal conductors / traces are discouraged due to the overbearing
influence of skin effect on performance degradation. A 10 to 15 m line width (W)
yields a quality factor of 3 to 5 for the desired operating frequency of 1.8 GHz [31].
2) Hollow coils / inductors are always preferred over inductors filled up to the center.
Innermost turns of the spiral suffer form an excessive increase in resistance due to
the generation of eddy currents at high frequencies; consequently their contribution,
if any, to the overall inductance value is far outweighed by the accompanying
deterioration of the quality factor.
3) It is prudent to limit the area occupied by the spiral inductor. At high frequencies,
the magnetic field generated by the inductor induces currents in the substrate which
in turn compound the resistive losses, thereby, limiting the overall inductance value.
Unlike larger coils, the magnetic field associated with smaller coils penetrates less
deep into the substrate alleviating the severity of the associated losses.
4) Tight magnetic coupling using the minimal allowable interwinding spacing (S) not
only maximizes Q but also reduces the total chip area. Accordingly, the
interwinding spacing in this design was limited to the minimal allowable M2-to-M2
spacing of 3.2 m.

50

The parameters of the final inductor selected are listed in Table 3.5. The total tank
circuit inductance was implemented by connecting two of the above inductors in series to
yield a dual inductor structure of L = 8.41 nH and a quality factor of 3.3 at the center
frequency of 1.1 GHz. Several inductor geometries explored before arriving at the final
geometry of the integrated inductor is included in Appendix C. Plots of the equivalent
resistance, Req ,and self inductance, L versus frequency for the final series inductor
structure are shown in Figures 3.12 and 3.13, respectively. These plots were obtained as a
consequence of the inductor simulations carried out in ASITIC.

3.7.2 Layout of Inductors

The layout of the final inductor (Figures 3.14 and 3.15) in this design was carried
out using Tanner Inc.s L-Edit. However, the inherent lack of support for inductors in the
layout and verification environment exacerbates the task of simulating the overall oscillator
circuit incorporating these inductors. A quick solution to the above problem lies in
modifying the extract definition file used by L-Edit, and was devised with the support of
Tanner Inc. Extraction in L-Edit is a method of verifying the layout. The extraction process
generates a netlist that describes the circuit represented by the layout in terms of device and
connectivity information. The general device extractor in L-Edit recognizes active devices,
passive devices and non standard or compound devices (subcircuits). Process independence
is maintained by means of an extract definition file (.ext) which describes how layers
interact electrically. The extract definition file accomplishes this by defining the
connections between two different process layers, and characterizing devices in terms of
their type, component layers, pins and model names. The following example illustrates the

51

modification carried out in the extract definition file to recognize an inductor in a CMOS nwell process:
#Inductor
device = ind(
RLAYER=inductor;
Plus=Metal2;
Minus=Metal1;
Model=;
) IGNORE_SHORTS;

The above statement causes an inductor to be written to the output by extracting inductors
available between two points. The extracted inductor has the following format in the
SPICE output file:
Lname n1 n2 [model] [L=]

where Lname is the name of the inductor, n1 and n2 are the two electrical nodes (pins)
between which the inductor is connected. As the extraction engine in L-Edit lacked the
ability to compute a numerical value of the inductance, alternatively, the self inductance
obtained as a consequence of the inductor design simulations in ASITIC was used. The
model designator in the above statement refers to the broadband model of an inductor.
The procedure to arrive at the spirals broadband model can be summarized as follows:
1) The 2-port parameters (s or y) of the desired spiral are calculated by carrying out
simulations in ASITIC.
2) A circuit representation of the 2-port network is then selected.
3) A SPICE deck representing the 2-port is created and the SPICE circuit simulator is
subsequently used to fit the circuit parameters to the calculated s-parameters. The
result is a broadband model for the spiral with the ability to be used in simulations
for the oscillator design. A sample illustration of the circuit file used for
52

representing the Spice deck for the equivalent model of Fig. 3.7 is included in
Appendix D.

53

Table 3.5
Final parameters of the integrated inductor
Parameter

Value

Outer diameter, dout (m)

210

Trace width, W (m)

10

Interwinding space, S (m)

3.2

Number of turns, N

Inductance, L (nH)

4.1

Quality Factor, Q

3.3

54

Inductance Versus Frequency

10

Inductance (nH)

0
1

10

-2

-4

Frequency (GHz)

Figure 3.12: Self inductance versus frequency for the series inductor structure.
Equivalent Resistance, Req versus frequency
4000

3500

Req (Ohms)

3000

2500

2000

1500

1000

500

0
1

Frequency (GHz)

Figure 3.13: Equivalent resistance versus frequency for the series inductor structure.
55

10

Metal 2

Metal 1

Via1

Figure 3.14: Layout of single inductor.

56

Figure 3.15: Layout of dual (series) inductor.

57

CHAPTER 4
VARACTORS
4.1 Background
Implementation and optimization of on-chip inductors generally dominates the
design and turnover time of LC based VCOs. It is not unusual to channel significant efforts
into the reduction of parasitic resistances and capacitances associated with the monolithic
inductor. Their heavy influence on the inductors quality factor, as well as the quality factor
of the LC tank speaks volumes in terms of performance degradation. However, it can be
recalled that the capacitance, C constituting the LC tank bears a finite Q-value. In addition,
a part of this capacitance is voltage controlled, or in other words implemented as a
varactor. The series resistance of a varactor has an overbearing influence on the overall
quality factor of the tank circuit; hence every effort must be made to carefully design the
same.
Traditionally, most monolithic VCO implementations [19, 32] have relied on reversebiased diode varactors for enabling a voltage dependant frequency tuning. In conformance
to a typical n-well CMOS process, one can recall that three types of diode structures exist;
they include: n+/p- bulk, p+/n-well and n-well/p- bulk. For instance, the p+/n-well diode
structure (Fig. 4.1 (a)) possesses a low series resistance resulting from a higher level of nwell doping compared to the p- bulk. Fig. 4.1 (b) illustrates the capacitance versus voltage
(or C-V) characteristics of a typical p+/n-well bulk diode structure. The p+/n-well structure
boasts a reasonably high quality factor of 20 or more making it a suitable candidate in RF
VCO implementations.

58

However reverse-biased diode varactors fall short of all the fizz in certain critical
areas. Large voltage swings typical of most RF circuits forward bias these diodes offsetting
performance gains if any. Another major problem concerning the design of diode based
varicaps emanates from the lack of a suitable device model. However, an alternative device
capable of delivering a voltage controlled capacitance, and readily available in any digital
CMOS process: is the gate capacitance of a MOS transistor. The MOS varicap overcomes
some of the limitations associated with a diode varicap while rendering good tuning
performance, and is hence the preferred choice in this thesis for implementing the tuning
element of the VCO.

4.2 MOS Varactor

The MOS capacitor has a structure that is analogous to a parallel plate capacitor, with
the drain, source and bulk (D, S, B) of a pMOS transistor connected together realizing one
plate of the capacitor, while the polysilicon gate constituting the other. The capacitance of
such a structure shows non-linear dependence on the gate-bulk voltage VBG. The resulting
MOS capacitor is illustrated in Figure 4.2. An inversion channel with mobile holes
manifest for the voltage VBG > |VT | (VT is the threshold voltage of the transistor). The
MOS capacitor is driven to operate under strong inversion for the condition VBG >> |VT |.
In contrast, for any value of the voltage VG > VB, the device enters the accumulation
region. The voltage at the semiconductor-gate oxide interface is positive enough to
facilitate the free motion of electrons. The value of the MOS capacitance, Cmos in the strong
inversion and accumulation region is at its maximum, and is equal to Cox, in turn estimated
as C ox = ox ( L W ) t ox where L W is the transistor channel area, and tox is the gate oxide
thickness. The details of the MOS C-V behavior can be found in any text book [36].
59

(a)

(b)
Figure 4.1: (a) CMOS p+/ n-well junction varactor and (b) capacitance versus voltage
characteristics.

60

For intermediate values of VBG the device traverses from depletion to weak to
moderate inversion. These regions are characterized by very few or few mobile charge
carriers at the gate oxide interface. This initiates a decrease in the MOS capacitance Cmos
i.e., Cmos < Cox. In this situation Cmos can be visualized as the series interconnection of Cox
with the parallel network of capacitances Cb and Ci. Here, Cb accounts for the modulation
of the depletion region and Ci is related to the variation of the number of holes at the gate
oxide interface. In the depletion region of operation Cb (Ci) dominates the MOS
capacitance while neither dominates the weak inversion region. Fig. 4.3 is a qualitative
illustration of the Cmos-VBG characteristics obtained by super imposing a small signal over
the DC bias voltage VBG.
The nonmonotonic nature of the small signal C-V characteristics of a MOS
capacitor with D B S [33] hampers the tuning capability of the VCO circuit. However,
other alternatives exist to facilitate a monotonic tuning characteristic. One simplistic
approach involves separating the connection between D-S and B, and connecting B to the
highest available DC voltage in the circuit; most frequently, the power supply terminal VDD
(Fig. 4.4). The pMOS capacitor with VB = VDD is restricted to the weak, moderate or strong
regions of operation and never enters the accumulation region. This topology is more
commonly termed as the inversion-mode or I-MOS capacitor and demonstrates a
significantly wider tuning range (Fig. 4.5).
Accumulation mode MOS capacitors [34] offer an interesting and attractive
alternative to the D B S pMOS capacitors, with a wider tuning range and lower
parasitic resistance. The accumulation mode (A-MOS) capacitor (Fig. 4.6) differs from the
conventional PMOS transistor.

61

Figure 4.2: MOS Capacitor.

Figure 4.3: Capacitance versus voltage characteristics of a MOS capacitor.

62

Figure 4.4: Inversion-mode MOS capacitor.

Figure 4.5: Capacitance versus voltage characteristics of inversion-mode MOS capacitor.

63

This structure is made possible by removing the p+- doped D-S diffusions, and
replacing then with n+ bulk contacts which in turn minimizes the parasitic n-well
resistance. The capacitance versus voltage characteristics of an accumulation mode MOS
capacitor is shown in Fig. 4.7. However, the lack of a suitable device model exacerbates
the RF designers task, and hence remain an unpopular topology in the realization of MOS
varactors. Due its monotonic nature all VCOs in this thesis were realized using an
inversion mode (I MOS) capacitor.

4.3 Varactor Design

The central aim in designing the varactor is to create a tank circuit with L = 8.41 nH
and C = 2.4 pF. These values guarantee a central frequency of 1.1 GHz. The tank circuit
capacitance is realized as a linear combination of the variable varactor (tuning) capacitance
and the fixed parasitic capacitance associated with the inductor and the amplifier (or
negative gm core). The tuning range of the VCO is largely limited by the presence of these
frequency independent parasitic capacitances.
The tuning varactor capacitance was implemented by connecting two identical
pMOS transistors in series, and set to operate in the inversion mode. In order to meet the
requirement of a tank capacitance of 2.4 pF, the varactor was designed to support a
capacitance of 1.1 pF (approximately), while the remaining 1.3 pF was distributed among
the inductor and the active device parasitics. The varactor has a maximum capacitance of
1.3 pF and a minimum capacitance of 0.8 pF. This variable capacitance facilitates a 10 %
tuning ability over the frequency range of 1.08 GHz 1.19 GHz. The varactor was
designed with the intention of maximizing the quality factor.

64

Figure 4.6: Accumulation-mode MOS capacitor.

Figure 4.7: Accumulation mode MOS capacitor characteristics.

65

This was achieved by using the minimum channel length (L) supported by the process,
reducing the width (W), and increasing the number of gate fingers (N).Therefore, the
resulting overall varactor has the following dimensions: width, (W) = 5.6 m, channel
length, (L) = 1.6 m and number of fingers, (N) = 190 (Fig. 4.8). The two series varactors
in turn consist of 5 parallel devices comprising of 38 fingers each (Figure 4.9). The
implementation schematic of the varactor and a cross section of its corresponding layout
are illustrated in Fig. 4.9 and Fig. 4.11, respectively. The corresponding tank capacitance
versus tuning voltage (Vtune) characteristics is shown in Figure 4.10.

4.4 Simulation of Varactor Characteristics

The simulation of the small signal C-V characteristics of an inversion-mode
varactor in PSPICE is often tricky. A combination of AC sweep and parametric analysis is
used to arrive at the capacitance versus voltage plot. A 1.1 GHz, 10mV signal is applied
across the varactor and the resulting current through this device is measured. The DC
voltage of 1.25 V (or VDD /2) is applied at the gate terminal. The tuning voltage, Vtune is
stepped parametrically from -2V to +3.5V. The capacitance can be easily calculated using
the relation defined in equation 4.1. A goal function in PSPICE with a construct as
indicated below (equation 4.2) is used to compute the resulting C-V characteristics. An
illustration of the circuit schematic used for simulation, and its corresponding C-V
characteristics are shown in Fig. 4.12.
C=

1 I
2f V

IG ( M 1 )

IMG

VG ( M 1 )

C = YatX
,1.1GHz
(2 pi Frequency )

66

(4.1)

(4.2)

Figure 4.8: Series connection of pMOS varactors.

Figure 4.9: Actual implementation schematic of the pMOS varactor.

67

Figure 4.10: Tank capacitance versus tuning voltage, Vtune.

68

Vtune

VDD

Vout1, Vout2

Figure 4.11: Cross section of the varactor layout.

69

Figure 4.12: Circuit used to simulate the varactor C-V characteristics.

70

CHAPTER 5
OSCILLATOR DESIGN
5.1 Background
The design of a monolithic inductor and a PMOS varactor was presented in Chapters
3 and 4, respectively. The design and implementation of a negative resistance oscillator
composed of these individual components forms the subject of discussion in the ensuing
chapter. The nature of the constituting components, and the impact they posses on the
behavior of the larger oscillator circuit is a matter of extreme importance, and bears an
overbearing influence on the underlying oscillator design. The design of an integrated
oscillator does not conform to a linear paradigm and like most analog designs is the
product of an iterative trial and error methodology.
Two different versions of the oscillators were designed and fabricated as part of the
test chip. In addition to the oscillator circuits, a host of test structures were incorporated to
better characterize the performance of the constituting circuit components.

5.2 Oscillator Design

The design of the oscillator is based on the principle of a negative transconductance
(-Gm) oscillator presented in Chapter 2. A cross-coupled CMOS differential topology was
chosen as the preferred topology owing to its low phase noise performance. The primary
goal in the design of the oscillator is to size (design) the active devices to overcome the
losses associated with the tank parallel resistance, Rp. The losses associated with the tank
inductance (L = 8.41 nH) and capacitance (C = 2.4 pF) can be represented by the parallel
resistance, Rp = 230 (obtained from inductor and varactor) design simulations.

71

Alternatively, Gtank = 1/Rp = 1/230 = 4.348 mS. Therefore, in order to ensure

oscillations, and to compensate for tank losses, negative transconductance associated with
the active devices (nMOS and pMOS transistor pairs). Hence,
Gm >= 4.348 mS.

(5.1)

To ensure the occurrence of oscillation, a start-up safety factor of 1.5 was chosen.
The resulting value of - Gm is equal to 6.522 mS. It can be recalled from the discussion in
Chapter 2 that, the negative transconductance of the parallel cross-coupled pair is given by
the relation:
Gmn + Gmp
Gm =
2

(5.2)

where Gmn and Gmp is the transconductance associated with the NMOS and PMOS
transistors, respectively. In order to maintain the symmetry of the oscillator outputs Gmn
should be equal to Gmp, and in the current design, Gmn = Gmp = 6.522 mS.
The MOS devices are sized, i.e., the W/L ratio of the nMOS (M1, M2) and pMOS (M3, M4)
devices constituting the -Gm core are computed using the relations,
W
Gmn = n C ox (VGS Vth )
L

(5.3)

W
Gmp = p C ox (VGS Vth )
L

(5.4)

The gate length was restricted to the minimum dimension value of 1.6 m as
supported

(W L )M1 M 2

by

the

process.

= 480 m 1.6 m

This

resulting

(W/L)

values

include:

and (W L )M 3 M 4 = 1480 m 1.6 m , respectively. A tail

current device is added to the VCO circuit, in order to have a greater control over the
oscillators output voltage swing. The tail current device is implemented as a simple
72

NMOS current mirror. The dimensions of the transistors constituting the NMOS current
mirror are as follows: (W L )M 5 = (W L )M 6 = 2000m 1.6m . The (W/L) ratio of the
transistors constituting the current mirror is large, and for (VGS >> Vth) presents an
effective short circuit to ground. The tail current can be varied to vary the peak-to-peak
oscillator output voltage swing. A change in the tail current modifies the negative
resistance presented to the tank circuit, and hence modifying the oscillator output voltage
swing. The implementation schematic of the VCO is illustrated in Fig. 5.1. Two 1 k
resistors were added in series with each of the oscillator outputs, Vout1 and Vout2. The series
resistors alleviate the effect of loading by the test equipment used to measure the oscillator
outputs. Implementation schematic of the modified VCO is shown in Fig. 5.2.

5.3 Oscillator Simulation

The oscillator design in this thesis was simulated using the OrCAD PSPICE
Simulator. All active devices were simulated using model parameters available from
MOSIS for the AMI Semiconductor 1.5 micron ABN process for the November 2005 run.
The MOSIS model parameters used in the design phase are included in Appendix E. The
series inductor structure was simulated using the model generated from the Sparameter data obtained from simulations in ASITIC. During simulation the oscillations of
the circuit are started by applying a small transient made available by the .IC statement in
SPICE. In real world oscillators, noise inherent to the system is adequate to facilitate the
oscillator startup. The simulated oscillator output at the terminals Vout1 and Vout2 is shown
in Fig. 5.3.

73

Figure 5.1: VCO Circuit.

74

Figure 5.2: Modified VCO Circuit.

75

Figure 5.3: Oscillator single ended outputs.

76

5.4 Layout of the Test Chip

The VCO core and the accompanying test structures in this chip were laid out using
Tanner Inc.s L-Edit layout editor and implemented in AMI Semiconductors 1.5 micron
ABN process - a two-metal, two-poly n-well CMOS process. The complete test chip
included two VCO circuits and a variety of test structures. Of the two VCO circuits, one

VCO structure has its outputs Vout1, Vout2 and its DC inputs VDD, IBias, Vtune and GND
connected to bond (probe) pads placed on the test chip while, the other VCO structure has
its inputs and outputs bondwired to the package (Fig. 5.4). These bond pads allow the
circuit to be microprobed using RF micro probes. The probe pads are laid out to have the
bond pad pitch match the pitch of the micro probes. The probe pads laid out are square
bond pads with a dimension of 100 m x 100 m, a pad pitch of 150 m and inter-pad
spacing of 50 m. The test structures integrated include a series inductor, short circuit and
open circuit bond pad structures have been integrated for the sole purpose of calibration
during network measurements. These structures enable the accurate measurement of the
quality factor, Q of the on-chip inductor. The complete test chip layout is shown in Figure
5.5.

5.5 Test Setup Measurement Configuration

The overall performance of the high frequency DUT (Voltage Controlled Oscillator) was
largely influenced by the quality of the interface board used to interface the VCO chip with
the oscilloscope. Parasitic capacitances and impedance discontinuities in the cabling and
interconnections result in voltage and current reflections and have a significant influence
on degrading the VCO performance. Additionally, these disturbances compromise the
signal integrity and introduce significant RF noise.
77

Vout1

Vout2

Vtune

VDD

GND

IBias

Figure 5.4: Final VCO layout.

78

Vtune
(13)

IBias
(11)

VSS
(10)

VCO-1 with
external bond
pad connections

Test Series
Inductor

Vout1
(17)

Vout1
(19)

Test Single
Inductor

(1)

(b)

(40)

VCO-2 with
internal bond
pad
connections

Open and
Short circuit
bond pads

VDD
(30)

Figure 5.5: Complete test chip layout.

79

The DUT Interface Board (Fig. 5.6) consists of a perforated component board with
corner standoffs, 3.5 mm SMA-female coaxial surface-mount input/output connectors
attached through custom-drilled pilot holes, a 40-pin DIP IC socket, and signal jumper
sockets. Gold-plated SMA connectors and sockets were used to resist corrosion for
maximum signal transfer. The bodies of the SMA connectors, which are tied to the
oscilloscope ground through the outer coaxial conductor, and are in turn connected to
provide a common ground reference for input and output signals.

The oscillator

measurement configuration is as illustrated in Fig. 5.7. Two HP E3631A DC supplies were

used to provide the oscillator inputs. These supplies were chosen specifically due to their
inherent ability to operate in constant voltage (CV) or constant current (CC) mode
contingent on the load conditions. Of the two supplies used, one was set up to operate in a
constant current (CC) mode yielding a bias current of 5mA, while the other was set up to
provide a fixed voltage of +2.5V (VDD) and a variable tuning voltage (VTune) ranging from
0 to 3V. The Tektronix 11801A Digital Sampling Oscilloscope with two sampling heads,
SD-14 and SD-24 was used for all experimental measurements to guarantee maximum
bandwidth, and good source and cabling impedance matching (50 ). Of the two measured
signals VOut+ and VOut- , one was used as an external trigger input source of the
oscilloscope. This set up ensured that sufficient trigger threshold voltage was available to
carry out the desired measurements. VCO tuning characteristics for the test chip is shown
in Fig. 5.8. Micro photograph of the fabricated 1.1 GHz CMOS LC VCO chip is shown in
Fig. 5.9.

80

Figure 5.6: DUT Interface Board.

81

HP

E3631A

IBias

VOut1
Tektronix 11801A
Digital Sampling
Oscilloscope

DC Supply

VDD
HP E3631A
DC Supply

VTune

DUT
VOut2

GND

Figure 5.7: Oscillator measurement setup.

82

1.22

1.2

Oscillation Frequency (GHz)

1.18

1.16

Calculated
Measured

1.14

1.12

1.1

1.08

1.06
0

0.5

1.5

2.5

Tuning Voltage (V)

Figure 5.8: VCO tuning characteristics.

83

3.5

VCO-1 with
external bond
pad connections

Test Series
Inductor

Test Single
Inductor

Open and
Short circuit
bond pads

VCO-2 with
internal bond
pad
connections

Figure 5.9: Micro photograph of the 1.1 GHz CMOS VCO test chip (1.5 m CMOS).

84

5.6 1.8 GHz VCO

This section aims to discuss the design and implementation of a 1.8 GHz CMOS LC
voltage controlled oscillator in the AMIS 0.5 micron C5 process. The inductor and pMOS
varactor design process is iterative, and is based on the guidelines presented in Chapters 3
and 4. The 1.8 GHz VCO core is an extension of the 1.1 GHz VCO reference design
discussed in Sections 5.1 5.4.
The VCO was implemented as a cross coupled complementary LC tank oscillator. The
reasons for choosing the cross coupled topology are summarized below:
1. Offers higher transconductance for a given current, thereby results in lower power
supply voltage and reduced transistor area.
2. Good rise and fall time symmetry.
3. Good phase noise performance.
Unlike its 1.1 GHz counterpart, the core of the 1.8 GHz VCO adopts a current reuse
approach [34], thereby, operating without a current source. The presence of a current
source in a VCO core entails fewer variations in the oscillation frequency due to supply
voltage related variations. However, the presence of the current source also causes a
reduction in the output voltage headroom, and additionally, a reduction in the tuning range
due to the presence of large size active devices required to facilitate enough Gm to provide
sustained oscillations.
An inductance of L = 3.2 nH and capacitance, C = 2.4 pF provides the desired
oscillation frequency of 1.8 GHz. A single inductor of L = 3.2 nH was designed using
ASITIC [28] while adhering to the guidelines discussed in Section 3.7.1. The inductor was
implemented using the Metal3 and Metal2, the highest metal levels available in the 0.5 m

85

process. Active devices were sized to compensate for the losses associated with the tank
parallel resistance, Rp. The losses associated with the tank inductance (L = 3.2nH) and
capacitance (C = 2.4 pF) can be represented by the parallel resistance, Rp = 150 (obtained
from inductor and varactor) design simulations. Alternatively, Gtank = 1/Rp = 1/150 = 6.67

mS. In order to enable sustained oscillations, it is imperative that the negative

transconductance associated with the active devices (nMOS and pMOS transistor pairs)
compensate for tank losses, hence the condition:

Gm >= 6.67 mS.

(5.5)

To ensure the occurrence of oscillations, a start-up safety factor of 1.5 was chosen.
The resulting value of - Gm is equal to 10.0 mS. It can be recalled from the discussion in
Chapter 2 that, the negative transconductance of the parallel cross-coupled pair is given by
the relation:
Gmn + Gmp
Gm =
2

(5.6)

where Gmn and Gmp is the transconductance associated with the nMOS and pMOS
transistors, respectively. In order to maintain the symmetry of the oscillator outputs Gmn
should be equal to Gmp, and in the current design, Gmn = Gmp = 10.0mS.
The MOS devices are sized, i.e., the W/L ratio of the nMOS (M1, M2) and pMOS (M3, M4)
devices constituting the -Gm core are computed using the relations,

W
Gmn = n C ox (VGS Vth )
L

(5.7)

W
Gmp = p C ox (VGS Vth )
L

(5.8)

86

The gate length was restricted to the minimum dimension value of 0.6 m as supported by
the process. The resulting (W/L) values include:

(W L )M 3 M 4

(W L )M1 M 2

= 178m 0.6 m and

= 524 m 0.6 m respectively. The output voltage swing in this case is

completely determined by the supply voltage, VDD. The nMOS (M1, M2) and pMOS (M3,
M4) differential pairs setup a positive feedback, and thereby yields the negative resistance
required to facilitate oscillations. In order to extract the oscillator outputs (Vout1 and Vout2)
for measurement purposes, a simple resistor loaded common source nMOS output buffer
was incorporated to the VCO core. It should be remembered that these output buffer
transistors contribute to the fixed portion of the tank capacitance, and should be included
during the computation of the tank capacitance required to generate oscillations of the
desired frequency (1.8 GHz in this design).The implementation schematic of the VCO is
illustrated in Fig. 5.10.
The oscillator design in this thesis was simulated using the OrCAD PSPICE
simulator. All active devices were simulated using model parameters available from
MOSIS for the AMI Semiconductor 0.5 micron C5 process for the January 2006 run. The
MOSIS model parameters used in the design phase are included in Appendix F. The
single inductor structure was simulated using the model generated from the Sparameter data obtained from simulations in ASITIC. The .IC statement in SPICE was used
to generate a small transient signal that enables oscillator startup. The simulated single
ended oscillator output is shown in Fig. 5.11. The 1.8 GHz VCO core and the
accompanying test structures in this chip were laid out using Tanner Inc.s L-Edit layout
editor and implemented in AMI 0.5 micron C5 process - a three-metal, two-poly n-well
CMOS process.
87

Figure 5.10 : Complete circuit of the 1.8 GHz VCO core. Note: M5 and M6 form buffer
transistors. R = 34 was designed in poly layer.

88

Figure 5.11: Oscillator single ended output.

89

The complete test chip comprises of the 1.8 GHz VCO core and a host of test
structures. Outputs of the VCO core (Vout1, Vout2) can be extracted from either the external
pin outs available on the package or the internal integrated bond pads. The DC inputs VDD,
Vtune and GND are directly bondwired to the package. These bond pads allow the circuit to
be microprobed using RF micro probes. The probe pads are laid out to have the bond pad
pitch match the pitch of the micro probes. Final implementation layout of the VCO core is
shown in Fig. 5.12. The test structures integrated include a single inductor (Fig. 5.13), a
test varactor, a test LC tank, short circuit and open circuit bond pad structures (Fig. 5.14 (a)
and (b)). The short circuit and open circuit bond pads structures have been included to
characterize the effects of the parasitics related to the probe pads. The effects of these
parasitics are subsequently de-embedded or subtracted from the overall measurements
carried out on the DUT (device under test), which in this case could be the test inductor or
the test varactor. A brief overview of the de-embedding technique is provided in Appendix
G. For a comprehensive treatment of de-embedding and on-wafer measurements the reader
is referred to the literature in [36]. The complete test chip layout is illustrated in Fig. 5.15.
The VCO core of Fig. 5.12 has its outputs (Vout1 and Vout2) connected to external pin outs.
Two integrated internal bond pads at these output nodes incorporated for microprobing in
turn contribute additional parasitic capacitances that deteriorate the VCO performance.
External bond pads part of the pad frame structure contribute additional parasitics that
affect the VCO. It is therefore imperative to understand the parasitic contribution of these
structures to better characterize the VCO performance. In order to accomplish this task, the
complete test chip layout of Fig. 5.15 was modified to segregate only those inputs and
output pins which are directly related to the VCO core and have an immediate consequence

90

on the VCO performance. The resulting modified structure is shown in Fig. 5.16. The
modified complete chip layout was then extracted into PSpice using the extraction engine
in L-Edit. The resulting Spice netlist file with the extracted parasitic capacitances
associated with the integrated internal bond pads and the external bond pads is included in
Appendix H for the readers reference. The simulated oscillator single ended output, Vout1
is shown in Fig. H.1.
The set up for carrying out measurements on the 1.8 GHz VCO chip resembles that
of the 1.1 GHz VCO chip. In order to maintain good signal integrity and reduce the
introduction of significant RF noise during the course of measurements a custom PCB with
surface-mount connectors is highly preferable. A socketed component interface board was
instead used to achieve the highest possible signal integrity while best utilizing the
resources available. The DUT Interface Board is shown in Figure 5.6. A HP E3136A DC
supply is used to provide the oscillator inputs: VDD, Vtune. The supply is set to operate in a
constant voltage (CV) mode and provides a fixed voltage of VDD = 2.5V.The tuning
voltage, Vtune is varied from 0 to 3V. The Tektronix 11801A Digital Sampling Oscilloscope
with SD-14 and SD-24 sampling heads was used for all experimental measurements for
maximum bandwidth, source and cabling impedance matching (50 ). Of the two
measured signals, VOut1 and VOut2, one was used as an external trigger input source of the
oscilloscope. This set up ensured that sufficient trigger threshold voltage was available to
carry out the desired measurements. An illustration of the measurement set up used with
the 1.8 GHz VCO chip is shown in Fig. 5.17. The measure oscillation waveform is shown
in Fig. 5.18. Micro photograph of the fabricated 1.8 GHz CMOS LC VCO chip is shown in
Fig. 5.19. The oscillator was found to oscillate at a center frequency of 1.758 GHz.

91

Vtune

VDD

Vout1
Vout2
GND

Figure 5.12: 1.8 GHz VCO final layout.

92

Figure 5.13: Inductor test structure.

93

(a)

(b)
Figure 5.14: Open circuit and short circuit bond pad structures. More information on these
structures is provided in Appendix G.

94

Open Circuit
Bond Pads

Short Circuit
Bond Pads

(1)

VSS

(40)

Test Inductor
Test Inverter

Vtune
(12)

VOut1
(14)

VOut2
(15)

VCO core with

bond pads for
extracting outputs

Test LC tank
comprising of test
inductor and
PMOS varactor

VDD

Test PMOS
Varactor

(21)

Figure 5.15: Complete test chip layout of the 1.8 GHz VCO (0.5 m CMOS).

95

VSS

(40)

Vtune
(12)

VOut1
(14)

VOut2
(15)

VCO core with

bond pads for
extracting outputs

VDD
(21)

Figure 5.16 Modified test chip layout to extract parasitic capacitances related to internal
and external bond pads.
96

HP

E3631A

VOut1
Tektronix 11801A
Digital Sampling
Oscilloscope

DC Supply

VDD
HP E3631A
DC Supply

VTune

DUT
VOut2

GND

Figure 5.17: Measurement setup for the 1.8 GHz VCO.

97

Figure 5.18: Oscillator output as observed on the Digital Sampling Oscilloscope.

98

Figure 5.19: Micro photograph of the 1.8 GHz CMOS VCO chip.

99

CHAPTER 6
CONCLUSIONS AND FUTURE WORK
The demand for reduced size and low cost mobile electronic devices has never been
as pronounced as it is today. Single chip Si-based radio solutions are one of the most
attractive and pervasive of the innovations emerging in the wireless application space.
However the quality factor of the integrated passives still continues to be a performance
limiting metric for all Si based radio implementations. The quality factor of the integrated
tank has a significant influence on the phase noise and power consumption of the VCO.
The work in this thesis focused on reasonable phase noise and tuning performance at the
oscillation frequency of 1.1 GHz by means of design optimization. Design optimization of
the LC-tank was carried out from a high quality inductors perspective. Though the
inductors quality factor continues to be the performance bottleneck, it will be justifiable
and evidently beneficial to channel efforts that will culminate in improving the varactor
tuning range in the presence of fixed parasitic capacitances.
The absence of a simulation ancillary to simulate phase noise in PSpice is a
formidable short coming in itself. The impact of device scaling on phase noise will be an
interesting investigative task. The scaling down of the minimum dimension to 0.25m or
0.18 m, and additionally, using multi-layer inductor structures (brought about by an
increase in metallization levels) to design high quality inductors will ultimately result in
high performance VCOs and PLLs.

100

BIBLIOGRAPHY
[1] T. E. Kolding, Review of RF CMOS performance and future process innovations,
Technical Report R98-1014, Aalborg University, RFIC Integrated Systems & Circuits
(RISC) Group, Aalborg, Denmark, Oct. 1998, ISSN 0908-1224.
[2] L. E. Larson, Integrated Circuit Technology Options for RFICs present status and
future directions, IEEE Journal of Solid State Circuits, vol. 33, no. 3, pp. 387399, March
1998.
[3] A. Matsuzawa, "RF-SoC - expectations and required conditions," IEEE Transactions on
Microwave Theory and Techniques, vol. 50, no. 1, pp 245-253, Jan. 2002
[4] P. H. Woerlee, M. J. Knitel, R. van Langevelde, D. B. M. Klassen, L. F. Tiemeijer, A.
J. Scholten, A. T. A. Zegers-van Duijnhoven, "RF-CMOS Performance Trends," IEEE
Transactions on Electron Devices, vol. 48, no. 3, pp 1776-1882, Aug. 2001.
[5] Tracking Advances in VCO Technology, Maxim Semiconductor Application Note,
no. 1768, Oct 2002.
[6] N.M. Nguyen., R.G. Meyer, "A 1.8 GHz monolitihic LC voltage-controlled oscillator,"
IEEE Journal of Solid-State Circuits, vol. 27, no. 3, pp 444-450, Mar. 1992.
[7] J. Craninckx, M. S. J. Steyart, "A 1.8 GHz Low-Phase-Noise CMOS VCO Using
Optimized Hollow Spiral Inductors," IEEE Journal of Solid-State Circuits, vol. 32, no. 5,
May 1997.
[8] J. Craninckx, M. S. J. Steyart, H. Miyakawa, "A Fully Integrated Spiral-LC CMOS
VCO Set with Prescaler for GSM and DSC-1800 Systems," Proceedings of the 1997 IEEE
Custom Integrated Circuits Conference, pp 403-406, May 1997.
[9] B. Razavi, "A 1.8 GHz CMOS Voltage-Controlled Oscillator," ISSCC Dig. Tech
Papers, pp.390-391, Feb. 1997.
[10] B. Razavi, RF Microelectronics, Prentice-Hall, 1998.
[11] C.-C. Ho, C.-W. Kuo, C.-C. Hsiao, Y.-J. Chan, "A 2.4 GHz low phase noise VCO
fabricated by 0.18um pMOS technologies," Proc. of IEEE Int. Symp. VLSI Tech., pp 144146, 2003.
[12] S. Levantino, C. Samori, A. Bonfanti, S.L.J. Gierkink, A.L. Lacaita, V. Boccuzzi,
Frequency dependence on bias current in 5 GHz CMOS VCOs: impact on tuning range
and flicker noise upconversion, IEEE J. of Solid-State Circuits, vol. 37, pp. 1003-1011,
Aug. 2002.

101

[13] A. Hajimiri, T. H. Lee, The Design of Low Noise Oscillators, Kluwer Academic
Publishers, 1999.
[14] D. B. Leeson, A simple model of feedback oscillator noise spectrum, Proc. IEEE,
vol. 54, pp. 329-330, Feb. 1966.
[15] C.-M. Hung and Kenneth K. O, A Packaged 1.1-GHz CMOS VCO with Phase noise
of -126 dBc/Hz at a 600-kHz Offset, IEEE J. of Solid State Circuits, vol. 35, no. 1, pp.
100103, Jan. 2000.

[16] J. N. Burghartz, D.C. Edelstein, M. Soyuer, H. A. Ainspan, and K. A. Jenkins, RF

Circuit Design Aspects of Spiral Inductors on Silicon, IEEE J. of Solid State Circuits, vol.
33, no. 12, pp. 20282034, Dec. 1998.
[17] Y. K. Koutsoyannopoulos and Y. Papananos, Systematic analysis and modeling of
integrated inductors and transformers in RF IC design, IEEE Transactions on Circuits and
Systems-II: Analog and Digital Signal Processing, vol. 47, no. 8, pp. 699713, Aug. 2000.
[18] Paolo Arcioni, Rinaldo Castello, Luca Perregrini, Enrico Sacchi, and Francesco
Svelto, An Innovative Modelization of Loss Mechanism in Silicon Integrated Inductors,
IEEE Transactions on Circuits and Systems-II: Analog and Digital Signal Processing, vol.
46, no. 12, pp. 14531460, Dec. 1999.
[19] J. Craninckx, M.S.J. Steyaert, A 1.8-GHz low-phase-noise CMOS VCO using
optimized hollow spiral inductors, IEEE J. of Solid-State Circuits, vol. 32, pp. 736- 744,
May 1997.
[20] J. N. Burghartz, D.C. Edelstein, M. Soyuer, H. A. Ainspan, and Keith A. Jenkins, RF
circuit design aspects of spiral inductors on silicon, IEEE Journal of Solid State Circuits,
vol. 33, no. 12, pp. 20282034, Dec. 1998.
[21] W. B. Kuhn, Approximate Analytical Modeling of Current Crowding Effects in
Multi-Turn Spiral Inductors, in IEEE Radio Frequency Integrated Circuits Symposium
Digest, pp. 271274, Proc. of 2000.
[22] C.P. Yue, S.S. Wong, Physical modeling of spiral inductors on silicon, IEEE Trans.
Electron Devices, vol. 47, pp. 560-568, Mar. 2000.
[23] P. Arcioni, R. Castello, L. Perregrini, and E. Sacchi, Modeling of metal and substrate
losses in CMOS and BiCMOS inductors for RFICs,Microwave Journal, vol. 42, pp. 62
74, Aug. 1999.
[24] J. Gil, H. Shin, A simple wide-band on-chip inductor model for silicon-based RF
ICs, IEEE Trans. Microwave Theory and Techniques, vol. 51, pp. 2023 - 2028, Sep. 2003.

102

[25] C. P. Yue, C. Ryu, J. Lau, T.H Lee, S. S. Wong , "A physical model for planar spiral
inductors on silicon," Electron Devices Meeting, 1996., International , vol., no.pp.155-158,
8-11 Dec. 1996.
[26] H. M. Greenhouse, Design of planar rectangular microelectronic inductors, IEEE
Trans. Parts, Hybrids, Pack., vol. PHP-10, pp. 101-109, June 1974.
[27] S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, Simple accurate
expressions for planar spiral inductances, IEEE Journal of Solid State Circuits, vol. 34,
no. 10, pp. 14191424, Oct. 1999.
[28] ASITIC: Analysis and Simulation of Spiral Inductors and Transformers for ICs,
http://rfic.eecs.berkeley.edu/~niknejad/asitic.html, University of California, Berkeley.
[29] Sonnet Suites: 3D Planar High Frequency Electromagnetic Software, Sonnet Software
Inc, Syracuse, NY.
[30] HFSS: 3D Electromagnetic-Field Simulation for High-Performance Electronic Design,
Ansoft, Pittsburgh, PA.
[31] J.R. Long, M.A. Copeland, The modeling, characterization, and design of monolithic
inductors for silicon RFICs, IEEE Journal of Solid State Circuits, vol. 32, no. 3, March
1997.
[32] P. Andreani, A Comparison between Two 1.8GHz CMOS VCOs tuned by different
varactors, in Proc. 22nd Eur. Solid-State Cir. Conf. (ESSCIRC), pp. 380383,1998.
[33] P. Andreani, S. Mattisson, On the use of MOS varactors in RF VCOs, IEEE
Journal of Solid State Circuits, vol. 35, no. 6, June 2000.
[34] P.Andreani, S. Mattisson, , A 1.8-GHz CMOS VCO Tuned By an AccumulationMode MOS Varactor, Proc. ISCAS 2000, Geneva, 2000 IEEE International Symposium
on Circuits and Systems, vol.1, pp 315-318, May 2000.
[36] Yannis Tsividis, Operation and Modeling of the MOS transistor, McGraw-Hill, 1987.
[35] Y. Park, S. Chakraborty, C.-H. Lee, S. Nuttnick, J. Laskar, Wide-band CMOS VCO
and frequency divider design for quadrature signal generation, IEEE MTT-S, vol. 3, pp
1493-1496, June 2004.
[36] F. Sischka, IC-CAP Characterization and Modeling Handbook, Agilent Technologies,
2002.

103

APPENDIX A
MATLAB PROGRAM TO COMPUTE INDUCTANCE
VALUE
% This program computes the inductance value for the given geomteric
% parameters.
%
qw=menu('All results obtained are in Henries','OK');
compMode=menu('Select a method to compute Inductance','Direct Computation', 'Lee winding Pitch
Modification', 'Wheeler Expression', 'Modified Wheeler Expression', 'Current Sheet Approximation', 'Data
Fitted Monomial Approach');
geom=menu('Choose Inductor Geometry', 'Square', 'Hexagonal' ,'Octagonal','Circle');
% permeability values
mum=menu('Permeability','Free Space', 'User Defined');
if mum==1
mu=4*pi*10^(-7);
end
if mum ==2
mu=input('Enter the value of permeability ');
end
%'Direct Computation Approach
if compMode==1
qw=menu('Direct Computation Approach','OK');
n=input('Number of turns');
r=input('Radius of the spiral (in meters)');
l=mu*n*n*r
end
%'Winding Pitch Modification to direct Computation method
if compMode==2
qw=menu('Winding Pitch Modification to direct Computation method','OK');
r=input('Radius of the spiral in meters');
p=input('Winding pitch in turns/meter');
le=input('Length of the spiral');
n=(p*le/mu)^(1/3)
l=mu*n*n*r
end
%'Wheeler Formula
if compMode==3
qw=menu('Wheeler Expression','OK');
n=input('Number of turns');
r=input('Radius of the spiral (in meters)');
a=input('Spiral mean radius');
l=(45*mu*n*n*a*a)/(22*r-14*a)
end
if compMode>3
dout=input('Outer diameter (in metres)');
din=input('Inner diameter (in metres)');
davg=0.5*(dout+din);
ro=(dout-din)/(dout+din);
end
%Modified Wheeler
if compMode==4
qw=menu('Modified Wheeler Expression', 'OK');

104

if geom==1
k1=2.34;
k2=2.75;
end
if geom==2
k1=2.33;
k2=3.62;
end
if geom>2
k1=2.25;
k2=3.55;
end
l=k1*mu*n*n*davg/(1+k2*ro)
end
%Current Sheet Approximation From Stanford
if compMode==5
qw=menu('Current Sheet Approximation Method','OK');
if geom==1
c1=1.27;
c2=2.07;
c3=0.18;
c4=0.13;
end
if geom==2
c1=1.09;
c2=2.23;
c3=0.00;
c4=0.17;
end
if geom==3
c1=1.07;
c2=2.29;
c3=0.00;
c4=0.19;
end
if geom==4
c1=1.00;
c2=2.46;
c3=0.00;
c4=0.20;
end
l=mu*n*n*davg*c1*(log(c2/ro)+c3*ro +c4*ro*ro)/2
end
%'Data Fitting compModel of Mohan et al
if compMode==6,
qw=menu('Data Fitting Monomial Expression','OK');
n=input('Number of turns');
s=input('Turn spacing');
w=input('Width of each turn');

105

if geom==1
bet=1.62e-3;
al1=-1.21;
al2=-0.147;
al3=2.4;
al4=1.78;
al5=-0.030;
end
if geom==2,
bet=1.28e-3;
al1=-1.24;
al2=-0.174;
al3=2.43;
al4=1.77;
al5=-0.049;
end
if geom==3,
bet=1.33e-3;
al1=-1.21;
al2=-0.163;
al3=2.43;
al4=1.75;
al5=-0.049;
end
l=bet*(dout.^al1).*(w.^al2).*(davg.^al3).*(n.^al4).*(s.^al5)
end
%end

106

APPENDIX B
TECHNOLOGY FILE USED IN ASITIC
<chip>
chipx = 512 ; dimensions of the chip in x direction in microns
chipy = 512 ; dimensions of the chip in y direction
fftx = 256 ; x-fft size (must be a power of 2)
ffty = 256 ; y-fft size
TechFile = sample.tek ; the name of this file
TechPath = /home/grad2/csalim1 ; the pathname of the data files
freq = .1
<layer> 0 ; Bulk Substrate, thickness of the wafer for 1.5um
rho = .01
; Resistivity: ohm-cm
t = 660
; Thickness: microns
eps = 11.9
; Permitivity: relative
;<layer> 1 ; Epi Layer
;
rho = 15
; ohm-cm
;
t=1
; microns
;
eps = 11.9
; relative
<layer> 1 ; Oxide Layer
rho = 1e10
; ohm-cm
t=6
; microns
eps = 3.9
; relative
<metal> 0 ; Substrate Contact Layer
layer = 1
; Epi Layer
rsh = 30
; Sheet Resistance Milli-Ohms/Square
t = 0.1
; Metal Thickness (microns)
d = .5
; Distance from bottom of layer (microns)
name = msub ; name used in ASITIC
color = yellow ; color in ASITIC
<via> 0
; metal 1 to substrate
top = 1
; via connects up to this metal layer
bottom = 0
; via connects down to this metal layer
r=5
; resistance per via
width = .4
; width of via
space = 1.3
; minimum spacing between vias
overplot1 = .3
; minimum dist to substrate metal
overplot2 = .3
; minimum dist to metal 1
name = via0
; name in ASITIC
color = purple
; color in ASITIC
107

<metal> 1 ; metal layer 1

layer = 1
rsh = 50
t=1
d = 1.62
name = m1
color = blue
<via> 1
; metal 1 to metal 2
top = 2
bottom = 1
r=4
width = .5
space = 1.5
overplot1 = .4
; to substrate metal
overplot2 = .4
; to metal 1
name = via1
color = white
<metal> 2 ; metal 2
layer = 1
rsh = 30
t = 1.0
d = 2.74
name = m2
color = grey

108

APPENDIX C
INDUCTOR GEOMETRIES EXPLORED
Len
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180

W
8
8.1
8.1
8.2
8.3
8.4
8.4
8.5
8.5
8.6
8.7
8.8
8.8
8.9
9
9
9.1
9.1
9.1
9.2
9.2
9.2
9.3
9.3
9.3
9.4
9.4
9.4
9.4
9.4
9.4
9.4
9.4
9.5
9.5
9.5
9.5
9.5
9.5
9.6
9.6
9.6
9.6
9.6
9.7
8
8
8.1
8.2
8.3
8.4

S
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3.1
3.1
3.1
3.1
3.1
3.1

N
4.5
4.5
4.75
4.75
4.75
4.75
5
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
7.25
6.25
6.5
6.75
7
7.25
6.5
4.5
4.75
4.75
4.75
4.75
4.75

L
4.04
4.01
4.17
4.13
4.08
4.04
4.19
4
4.15
4.1
4.06
4.02
4.19
4.14
4.1
4.2
4.05
4.15
4.2
4.01
4.1
4.15
4.05
4.09
4.15
4
4.04
4.1
4.17
4.19
4.16
4.17
4.17
4.04
4.11
4.13
4.09
4.1
4.1
4.05
4.07
4.03
4.03
4.03
4.01
4.01
4.18
4.13
4.09
4.05
4.01

R
9.61
9.48
9.78
9.64
9.51
9.38
9.69
9.25
9.55
9.42
9.29
9.16
9.38
9.26
9.14
9.31
9.02
9.19
9.37
8.91
9.07
9.24
8.95
9.11
9.3
8.74
8.9
9.08
9.2
9.28
9.37
9.49
9.52
8.97
9.09
9.17
9.25
9.36
9.38
8.96
9.04
9.11
9.22
9.23
8.91
9.59
9.89
9.76
9.61
9.48
9.35

C1
166.78
170.52
175.74
175.49
176.58
175.52
179.9
177.85
182.43
184.78
186.9
187.74
191.68
191.59
188.9
192.91
185.43
189.23
192.07
184.76
188.7
191.49
189.66
192.42
194.41
191.54
194.64
196.69
198.08
199.79
200.25
200.46
199.12
198.15
198.89
200.58
200.91
200.93
199.91
200
201.67
201.87
201.77
201.28
201.42
167.5
172.72
175.5
176.57
175.83
175.99

C2
158.39
159.01
165.2
165.44
169.02
168.05
172.27
170.04
173.45
172.56
175.03
179.53
183.76
189.37
181.9
185.83
174.08
176.55
180.57
179.15
181.83
186.12
186.65
190.9
193.08
189.22
191.46
193.17
196.13
197.48
199.9
200.77
204.25
193.24
198.74
200.18
202.89
204.06
205.73
197.98
199.17
201.66
202.55
201.98
196.5
159
165.11
165.44
169.17
165.17
169.21

R1
11.52
11.19
10.72
10.89
11.25
11.25
11.85
11.32
11.84
11.56
11.66
12.12
12.09
12.59
12.53
12.26
12.58
12.32
12.77
13.14
12.89
13.43
13.39
13.99
15.27
11.46
12.05
13.37
14.41
14.78
16.4
18.4
20.26
13.37
14.6
15.01
16.73
18.99
20.52
14.63
15.05
16.81
18.87
20.43
15.25
11.59
11.1
10.92
11.3
11.1
11.54

109

R2
-7.6
-7.74
-6.96
-7.14
-7.25
-7.35
-7.82
-7.43
-7.94
-8.02
-8.06
-8.17
-8.01
-7.99
-8.56
-8.21
-9.28
-9.07
-9.35
-9.24
-9.06
-9.39
-9.12
-9.5
-10.6
-7.12
-7.73
-9
-9.84
-10.2
-11.6
-13.4
-14.4
-9.16
-9.85
-10.3
-11.6
-13.6
-14.6
-10.2
-10.6
-12.1
-13.9
-15.4
-11.2
-7.69
-6.94
-7.14
-7.25
-7.47
-7.55

Q
2.86
2.87
2.89
2.9
2.91
2.92
2.93
2.94
2.94
2.95
2.96
2.97
3.02
3.03
3.03
3.05
3.04
3.06
3.03
3.05
3.06
3.04
3.07
3.04
3.02
3.1
3.07
3.05
3.06
3.05
3
2.97
2.96
3.05
3.06
3.05
2.99
2.96
2.95
3.06
3.04
2.99
2.96
2.95
3.04
2.84
2.86
2.87
2.89
2.9
2.91

180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180

8.4
8.5
8.6
8.7
8.7
8.8
8.9
9
9
9.1
9.1
9.1
9.2
9.2
9.2
9.3
9.3
9.3
9.3
9.3
9.3
9.3
9.4
9.4
9.4
9.4
9.4
9.4
9.5
9.5
9.5
9.5
9.5
9.6
9.6
8
8.1
8.2
8.3
8.3
8.4
8.5
8.6
8.7
8.8
8.9
8.9
9
9
9
9.1
9.1
9.1
9.2
9.2
9.2
9.2

3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2

5
5
5
5
5.25
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.25
6.75
7
7.25
6
6.25
6.5
6.75
7
7.25
6.25
6.5
6.75
7
7.25
6.25
6.5
4.75
4.75
4.75
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.25

4.16
4.11
4.07
4.03
4.2
4.15
4.1
4.06
4.16
4.01
4.11
4.16
4.06
4.1
4.16
4.01
4.05
4.11
4.18
4.17
4.18
4.19
4.05
4.12
4.14
4.1
4.11
4.11
4.06
4.08
4.04
4.04
4.04
4
4.02
4.14
4.1
4.06
4.02
4.17
4.12
4.08
4.04
4.16
4.11
4.07
4.17
4.02
4.12
4.17
4.07
4.11
4.17
4.02
4.06
4.12
4.19

9.66
9.52
9.39
9.26
9.48
9.35
9.23
9.12
9.29
9
9.16
9.33
9.04
9.2
9.39
8.91
9.07
9.26
9.38
9.55
9.66
9.7
9.05
9.17
9.24
9.32
9.44
9.46
9.05
9.12
9.2
9.3
9.32
8.92
8.99
9.87
9.73
9.59
9.46
9.77
9.63
9.5
9.36
9.45
9.33
9.21
9.38
9.09
9.25
9.43
9.13
9.3
9.49
9
9.17
9.35
9.47

180.49
184.49
183.74
187.84
191.78
191.31
188.92
185.45
189.25
184.62
188.52
191.3
189.73
192.49
194.46
191.77
194.5
196.46
198.36
200.58
200.8
199.48
196.18
196.91
198.66
199
198.93
197.99
200.48
202.15
202.37
202.27
201.78
199.99
201.46
172.48
175.26
175.88
176
180.51
182.06
184.5
186.74
191.61
189.86
185.47
189.28
185.1
188.84
191.62
188.63
191.36
193.36
190.4
193.11
195.1
196.99

172.5
172.54
172.16
178.21
183.23
188.63
181.88
174.07
176.53
177.12
180.16
185.06
186.43
190.7
193.04
189.03
193.2
195.38
196.89
200.39
201.47
204.95
190.91
196.39
197.99
200.8
201.75
203.31
198.75
199.9
202.36
203.29
202.73
195.36
196.31
165.34
165.67
165.09
169.21
172.49
172.03
172.84
175.57
189.71
187.35
174.05
176.51
174.42
176.94
181.02
183.94
188.24
190.38
187.88
192.06
194.39
195.9

110

12.09
11.64
11.85
12.02
12.04
12.61
12.57
12.61
12.35
13.04
12.81
13.38
13.43
14.02
15.3
13.58
14.21
15.52
16.44
18.38
20.35
22.26
13.57
14.8
15.19
16.91
19.18
20.74
14.67
15.09
16.83
18.86
20.42
14.92
15.26
11.31
11.13
11.13
11.57
12.13
11.98
11.84
11.93
12.7
12.94
12.65
12.38
12.91
12.67
13.17
13.37
13.97
15.24
13.72
14.36
15.67
16.59

-8.09
-8.05
-8.31
-8.17
-7.98
-8.03
-8.58
-9.29
-9.08
-9.34
-9.12
-9.41
-9.16
-9.53
-10.7
-9.23
-9.64
-10.8
-11.7
-13.4
-15.2
-16.2
-9.41
-10.1
-10.5
-11.8
-13.8
-14.9
-10.1
-10.6
-12
-13.8
-15.3
-10.8
-11.2
-7.12
-7.33
-7.48
-7.56
-8.1
-8.19
-8.25
-8.25
-7.99
-8.39
-9.31
-9.09
-9.55
-9.35
-9.66
-9.27
-9.64
-10.8
-9.35
-9.76
-10.9
-11.8

2.92
2.93
2.94
2.95
2.99
3
3.01
3.02
3.03
3.02
3.04
3.01
3.04
3.02
3
3.05
3.02
3
3.01
2.95
2.92
2.91
3.03
3.04
3.03
2.98
2.94
2.94
3.03
3.02
2.97
2.94
2.93
3.03
3.02
2.85
2.86
2.87
2.88
2.89
2.9
2.91
2.92
2.98
2.98
2.99
3.01
3
3.02
2.99
3.02
2.99
2.97
3.02
3
2.98
2.99

180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180

9.2
9.2
9.2
9.3
9.3
9.3
9.3
9.3
9.3
9.3
9.4
9.4
9.4
9.4
9.4
9.4
9.5
9.5
8
8.1
8.2
8.2
8.3
8.4
8.5
8.6
8.6
8.7
8.8
8.8
8.9
8.9
8.9
9
9
9
9.1
9.1
9.1
9.1
9.1
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.3
9.3
9.3
9.3
9.3
9.3
9.4
9.4
9.4

3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3

6.75
7
7.25
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
7.25
6.25
6.5
4.75
4.75
4.75
5
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.25
6.75
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
7.25
6.25
6.5
7

4.18
4.19
4.2
4.01
4.06
4.13
4.15
4.12
4.12
4.12
4.01
4.07
4.09
4.05
4.06
4.06
4.01
4.03
4.11
4.07
4.03
4.18
4.13
4.09
4.04
4
4.17
4.12
4.08
4.18
4.03
4.13
4.18
4.08
4.12
4.18
4.03
4.07
4.13
4.2
4.19
4.02
4.07
4.14
4.16
4.13
4.13
4.14
4.02
4.08
4.1
4.06
4.07
4.07
4.02
4.04
4

9.64
9.76
9.79
9.04
9.22
9.34
9.42
9.5
9.61
9.64
9.01
9.12
9.2
9.28
9.38
9.39
9
9.08
9.85
9.7
9.57
9.88
9.74
9.6
9.47
9.34
9.56
9.43
9.31
9.48
9.18
9.35
9.52
9.22
9.39
9.59
9.1
9.26
9.45
9.57
9.74
9.13
9.31
9.43
9.51
9.59
9.71
9.73
9.19
9.3
9.38
9.45
9.56
9.57
9.08
9.15
9.33

199.21
199.46
198.67
194.37
196.32
197.12
198.9
199.27
199.18
198.24
196.89
198.11
199.75
199.98
200.02
199.49
200.05
201.51
172.24
175.88
176.01
180.58
180.13
184.34
186.62
187.46
191.47
188.96
185.5
189.31
185.12
188.87
191.66
188.6
191.33
193.34
189.45
192.15
194.1
196
198.24
194.41
196.37
197.18
198.97
199.35
199.34
198.4
195.26
196.45
198.15
198.4
198.41
197.88
200.07
201.56
201.75

199.25
200.42
202.22
190.05
192.05
197.33
198.63
201.39
202.65
204.35
195.13
198.3
199.28
201.72
202.69
202.16
195.3
196.27
165.58
164.99
169.2
172.32
171.08
172.84
175.31
183.81
188.86
181.84
174.03
176.48
174.4
176.91
180.99
183.66
188.17
190.42
186.74
190.94
193.11
194.62
198.1
190.02
192.01
197.28
198.57
201.32
202.25
203.94
193.66
197.03
198.18
200.67
201.49
200.93
195.28
196.23
199.25

111

18.55
20.49
22.32
14.39
15.71
16.91
17.24
18.99
21.25
22.88
13.91
15.08
15.47
17.25
19.29
20.77
14.94
15.39
11.53
11.17
11.6
12.17
12.23
11.91
11.98
12.69
12.69
12.64
12.68
12.41
12.95
12.7
13.19
13.38
13.99
15.27
13.78
14.42
15.75
16.67
18.61
14.42
15.74
16.94
17.26
19
21.2
22.88
16.16
17.32
17.66
19.48
21.58
23.04
15.02
15.44
19.15

-13.6
-15.2
-16.5
-10.2
-11.4
-12
-12.4
-13.7
-15.6
-16.7
-9.38
-10.3
-10.7
-12.2
-13.9
-15.3
-10.8
-11.3
-7.31
-7.49
-7.56
-8.13
-8.34
-8.26
-8.29
-8.23
-8.03
-8.59
-9.32
-9.09
-9.56
-9.36
-9.67
-9.29
-9.64
-10.8
-9.42
-9.83
-11
-11.9
-13.6
-10.2
-11.4
-12
-12.4
-13.7
-15.6
-16.7
-11.6
-12.4
-12.8
-14.2
-16
-17.4
-10.9
-11.3
-14.6

2.93
2.9
2.9
3
2.98
2.99
2.98
2.93
2.9
2.89
3.01
3.02
3.01
2.95
2.92
2.92
3.01
3
2.83
2.84
2.86
2.86
2.87
2.88
2.89
2.9
2.95
2.96
2.97
2.98
2.98
2.99
2.97
3
2.97
2.95
3
2.97
2.95
2.97
2.91
2.98
2.96
2.97
2.96
2.91
2.88
2.87
2.96
2.97
2.96
2.9
2.88
2.87
3
2.99
2.9

180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180

8
8.1
8.1
8.2
8.3
8.4
8.5
8.5
8.6
8.7
8.7
8.8
8.8
8.8
8.9
8.9
8.9
9
9
9
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.2
9.2
9.2
9.2
9.2
9.2
9.3
9.3
9.3
9.3
8
8
8.1
8.1
8.2
8.3
8.4
8.4
8.5
8.6
8.6
8.7
8.7
8.7
8.8
8.8
8.8
8.9
8.9
8.9

3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5

4.75
4.75
5
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
7.25
6.25
6.5
6.75
7
4.75
5
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.25
5.5
5.75
5.5
5.75
6

4.08
4.04
4.19
4.14
4.1
4.05
4.01
4.18
4.13
4.09
4.19
4.04
4.14
4.19
4.09
4.13
4.19
4.04
4.08
4.14
4.03
4.08
4.15
4.17
4.14
4.15
4.15
4.03
4.09
4.11
4.07
4.08
4.08
4.03
4.05
4.01
4.01
4.05
4.19
4.01
4.15
4.11
4.06
4.02
4.19
4.14
4.1
4.2
4.05
4.15
4.2
4
4.1
4.14
4.05
4.09
4.15

9.82
9.68
10
9.86
9.72
9.58
9.44
9.66
9.53
9.41
9.58
9.28
9.45
9.62
9.32
9.49
9.69
9.19
9.35
9.54
9.22
9.41
9.53
9.61
9.69
9.8
9.83
9.28
9.39
9.47
9.55
9.66
9.66
9.26
9.33
9.4
9.5
9.79
10.12
9.65
9.97
9.83
9.69
9.55
9.77
9.64
9.51
9.69
9.38
9.55
9.73
9.25
9.42
9.59
9.28
9.45
9.64

172.86
176.02
180.59
180.15
182.31
185.29
187.59
192.03
189.23
185.56
189.37
185.14
188.9
191.69
188.63
191.36
193.38
189.39
192.47
194.53
194.45
196.42
197.24
199.04
199.43
199.46
198.53
195.37
196.55
198.22
198.48
198.49
197.98
198.44
199.97
200.12
200.14
172.66
177.15
175.75
180.16
179.86
184.23
187.23
191.65
189.01
185.58
189.4
185.17
188.93
191.72
184.65
188.45
191.19
189.46
192.54
194.57

164.9
169.19
172.31
171.07
171.88
174.41
184.03
186.82
185.32
173.86
176.3
174.38
176.89
180.96
183.63
188.14
190.4
186.58
188.82
190.5
189.98
191.96
197.22
198.51
201.25
202.14
203.81
193.4
196.82
198.12
200.59
201.41
200.84
194.14
195.19
197.36
198.1
166.16
170.28
167.49
171.06
171.36
173.12
181.96
185.5
181.81
173.84
176.27
174.36
176.87
180.92
179.01
182
187.1
186.36
188.65
190.46

112

11.57
11.63
12.2
12.27
12.16
12.11
12.75
12.61
12.93
12.72
12.45
12.98
12.73
13.22
13.42
14.02
15.3
13.81
14.35
15.62
14.45
15.76
16.96
17.27
19
21.15
22.87
16.19
17.34
17.67
19.48
21.6
23.05
17.23
17.59
19.42
21.36
11.85
12.46
11.7
12.3
12.52
12.17
12.63
12.56
12.71
12.75
12.48
13.01
12.76
13.25
13.57
13.33
13.96
13.85
14.38
15.65

-7.47
-7.56
-8.13
-8.35
-8.42
-8.39
-8.23
-8.17
-8.49
-9.35
-9.13
-9.57
-9.36
-9.68
-9.3
-9.65
-10.8
-9.44
-10
-11.2
-10.2
-11.4
-12
-12.4
-13.7
-15.5
-16.7
-11.6
-12.4
-12.8
-14.2
-16
-17.4
-13
-13.4
-15
-16.7
-7.61
-8.13
-7.79
-8.35
-8.57
-8.48
-8.27
-8.19
-8.61
-9.36
-9.13
-9.58
-9.37
-9.68
-9.58
-9.36
-9.67
-9.48
-10
-11.3

2.82
2.83
2.84
2.85
2.86
2.87
2.88
2.93
2.93
2.94
2.96
2.95
2.97
2.94
2.97
2.95
2.93
2.98
2.95
2.93
2.96
2.94
2.94
2.94
2.89
2.86
2.85
2.94
2.94
2.94
2.88
2.86
2.85
2.95
2.94
2.88
2.86
2.8
2.81
2.81
2.82
2.83
2.84
2.85
2.9
2.91
2.92
2.93
2.93
2.94
2.92
2.93
2.95
2.92
2.95
2.93
2.91

180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180

9
9
9
9
9
9
9
9
9.1
9.1
9.1
9.1
9.1
9.1
9.2
9.2
9.2
9.2
9.3
8
8
8.1
8.2
8.3
8.3
8.4
8.5
8.6
8.6
8.7
8.7
8.7
8.8
8.8
8.8
8.9
8.9
8.9
8.9
8.9
8.9
8.9
8.9
9
9
9
9
9
9
9.1
9.1
9.1
9.1
9.2
8
8.1
8.2

3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.7
3.7
3.7

5.5
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
7.25
6.25
6.5
6.75
7
6.5
4.75
5
5
5
5
5.25
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
7.25
6.25
6.5
6.75
7
6.5
5
5
5

4
4.04
4.09
4.16
4.18
4.15
4.16
4.16
4.04
4.1
4.12
4.08
4.09
4.09
4.04
4.06
4.02
4.03
4
4.01
4.16
4.12
4.07
4.03
4.2
4.15
4.11
4.06
4.16
4.01
4.11
4.15
4.06
4.1
4.16
4.01
4.05
4.1
4.17
4.2
4.16
4.17
4.17
4.05
4.11
4.13
4.1
4.1
4.1
4.05
4.07
4.03
4.04
4.01
4.13
4.08
4.04

9.15
9.32
9.5
9.62
9.7
9.79
9.9
9.93
9.37
9.49
9.56
9.64
9.75
9.76
9.35
9.42
9.5
9.6
9.28
9.77
10.09
9.94
9.8
9.65
9.88
9.75
9.61
9.48
9.65
9.35
9.52
9.69
9.38
9.55
9.75
9.25
9.42
9.6
9.73
9.81
9.89
10
10.04
9.47
9.58
9.66
9.74
9.85
9.86
9.45
9.52
9.59
9.69
9.37
10.06
9.92
9.77

190.33
192.98
194.97
196.29
197.92
198.33
198.49
197.07
195.42
196.61
198.31
198.58
198.56
198.08
195.77
197.27
197.43
197.47
200.77
172.72
177.22
179.87
181.5
187.15
191.06
189.03
185.61
185.19
188.95
184.32
188.19
190.94
188.97
191.66
193.64
189.36
192
193.96
195.28
196.94
197.36
197.52
196.12
195.15
196.34
198.09
198.4
198.35
197.9
195.67
197.16
197.34
197.39
198.74
176.88
179.58
185.02

184.06
187.71
189.67
192.74
193.95
196.41
197.54
201.24
193.36
196.76
197.82
200.35
201.34
200.75
192.71
193.44
195.59
196.64
198.88
167.4
171.38
171.35
172.6
177.11
182.12
181.79
173.82
174.34
176.84
177.66
180.78
185.81
184.72
189.04
191.12
183.06
186.73
188.49
191.54
192.96
195.42
196.31
199.99
192.13
195.92
196.83
199.27
200.46
199.82
191.65
192.6
194.72
195.56
196.06
171.83
171.64
174.68

113

13.88
14.51
15.81
16.89
17.23
18.91
20.98
22.89
16.21
17.36
17.68
19.49
21.62
23.1
17.56
17.93
19.79
21.71
17.9
12.12
12.76
12.56
12.57
12.34
12.4
12.75
12.78
13.05
12.79
13.5
13.28
13.9
13.78
14.41
15.73
13.95
14.57
15.89
16.97
17.3
18.99
21.02
22.96
16.17
17.34
17.65
19.43
21.6
23.1
17.51
17.87
19.71
21.62
18.2
13.03
12.82
12.44

-9.89
-10.4
-11.6
-12.4
-12.8
-14.2
-16
-16.9
-11.6
-12.4
-12.8
-14.2
-16
-17.4
-13.1
-13.6
-15.1
-16.8
-13.3
-7.77
-8.32
-8.57
-8.64
-8.45
-8.29
-8.61
-9.36
-9.59
-9.38
-9.61
-9.4
-9.71
-9.54
-9.93
-11.1
-9.96
-10.4
-11.7
-12.5
-12.9
-14.3
-16.1
-17
-11.7
-12.4
-12.9
-14.3
-16.1
-17.5
-13.2
-13.6
-15.2
-16.9
-13.7
-8.52
-8.79
-8.62

2.96
2.93
2.91
2.92
2.91
2.87
2.84
2.83
2.91
2.92
2.91
2.86
2.84
2.83
2.92
2.92
2.86
2.84
2.92
2.79
2.79
2.81
2.82
2.83
2.87
2.88
2.89
2.9
2.92
2.91
2.92
2.9
2.93
2.9
2.89
2.94
2.91
2.89
2.9
2.89
2.84
2.82
2.81
2.89
2.9
2.89
2.84
2.81
2.81
2.9
2.89
2.84
2.82
2.9
2.78
2.79
2.8

180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180

8.3
8.4
8.5
8.5
8.6
8.6
8.6
8.7
8.7
8.7
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.9
8.9
8.9
8.9
8.9
8.9
8.9
9
9
9
9
9
9.1
9.1
8
8.1
8.2
8.2
8.3
8.4
8.4
8.5
8.5
8.5
8.6
8.6
8.6
8.7
8.7
8.7
8.7
8.7
8.7
8.7
8.8
8.8
8.8
8.8
8.8
8.8

3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8

5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.25
6.75
7
7.25
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
6.25
6.5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.25
6.75
7
7.25
5.75
6
6.25
6.5
6.75
7

4.16
4.11
4.07
4.17
4.02
4.12
4.16
4.07
4.11
4.17
4.02
4.06
4.11
4.18
4.17
4.18
4.19
4
4.06
4.12
4.14
4.11
4.11
4.11
4
4.06
4.08
4.04
4.05
4.01
4.02
4.09
4.05
4
4.17
4.12
4.08
4.18
4.03
4.13
4.17
4.08
4.12
4.18
4.03
4.07
4.12
4.19
4.18
4.19
4.2
4.01
4.07
4.13
4.16
4.12
4.12

9.86
9.72
9.59
9.76
9.45
9.62
9.8
9.49
9.65
9.85
9.35
9.51
9.71
9.83
9.99
10.11
10.14
9.38
9.56
9.68
9.76
9.84
9.95
9.96
9.43
9.54
9.61
9.69
9.79
9.4
9.47
10.03
9.89
9.74
9.97
9.83
9.69
9.87
9.56
9.73
9.91
9.59
9.76
9.96
9.45
9.62
9.81
9.93
10.1
10.21
10.25
9.48
9.67
9.79
9.86
9.94
10.06

189.05
185.63
185.26
188.98
184.39
188.25
191
188.36
191.42
193.5
189.47
192.12
194.09
195.43
197.56
197.73
196.35
193.79
195.67
196.36
198.09
198.4
198.4
197.97
194.04
195.71
197.23
197.43
197.48
195.46
196.89
176.59
179.29
185.75
189.08
185.65
185.28
189.05
184.86
188.57
190.94
188.39
191.46
193.54
189.46
192.11
194.06
195.4
197.52
197.72
196.36
192.83
194.69
195.37
197.14
197.62
197.61

181.77
173.8
174.17
176.82
177.38
180.45
185.38
184.08
186.41
188.08
184.32
187.95
189.92
192.96
196.57
197.67
201.35
187.28
189.35
194.88
196.12
198.72
199.54
198.87
190.89
191.88
192.73
194.84
195.78
194.22
195.21
172.12
171.93
175.23
181.75
173.78
174.15
176.63
174.67
177.22
183.78
184.05
186.38
188.04
182.84
186.52
188.4
191.43
195.27
196.12
199.76
186.22
188.16
193.74
195.26
197.2
197.94

114

12.78
12.82
13.08
12.83
13.52
13.29
13.9
13.83
14.36
15.64
14.08
14.71
16.05
17.11
19.12
21.13
23.1
14.66
16.02
17.29
17.61
19.39
21.56
23.06
16.47
17.55
17.9
19.72
21.67
18.23
18.63
13.3
13.09
12.63
12.82
12.85
13.11
12.86
13.39
13.15
13.82
13.86
14.39
15.67
14.01
14.63
15.95
17.02
19
20.95
22.93
14.72
16.09
17.38
17.69
19.44
21.63

-8.62
-9.37
-9.62
-9.38
-9.64
-9.42
-9.74
-9.58
-10.1
-11.4
-9.92
-10.4
-11.6
-12.4
-14.2
-15.9
-16.9
-10.6
-11.9
-12.5
-12.9
-14.3
-16.2
-17.7
-12
-13.2
-13.6
-15.2
-16.9
-13.5
-14
-8.74
-9.02
-8.87
-8.62
-9.37
-9.62
-9.41
-9.85
-9.65
-9.81
-9.59
-10.1
-11.4
-10
-10.5
-11.7
-12.5
-14.2
-16
-17
-10.7
-12
-12.6
-13
-14.4
-16.4

2.86
2.87
2.88
2.89
2.88
2.9
2.87
2.91
2.88
2.86
2.91
2.89
2.87
2.88
2.82
2.8
2.79
2.89
2.87
2.88
2.87
2.82
2.79
2.79
2.87
2.88
2.87
2.82
2.8
2.88
2.87
2.76
2.77
2.79
2.83
2.84
2.85
2.87
2.86
2.87
2.85
2.88
2.86
2.84
2.89
2.86
2.84
2.85
2.8
2.77
2.77
2.87
2.85
2.86
2.85
2.8
2.77

180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
180
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190

8.8
8.9
8.9
8.9
8.9
8.9
9
9
8
8.1
8.1
8.2
8.3
8.3
8.4
8.4
8.4
8.5
8.5
8.5
8.6
8.6
8.6
8.6
8.7
8.7
8.7
8.7
8.7
8.7
8.7
8.8
8.8
8.8
8.8
8.8
8.9
8.9
8.9
8.9
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9
9.1
9.2
9.2
9.3
9.4
9.5
9.6
9.6

3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3

7.25
6
6.25
6.5
6.75
7
6.25
6.5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
5.5
5.75
6
6.75
5.75
6
6.25
6.5
6.75
7
7.25
6
6.25
6.5
6.75
7
6.25
6.5
6.75
7
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.75
4.75
4.75
4.75
5

4.13
4.01
4.07
4.09
4.05
4.06
4.02
4.03
4.06
4.01
4.18
4.13
4.09
4.19
4.04
4.14
4.18
4.09
4.13
4.19
4.04
4.08
4.13
4.2
4.02
4.08
4.14
4.17
4.13
4.14
4.14
4.02
4.08
4.1
4.06
4.07
4.03
4.04
4
4.01
4.17
4.14
4.1
4.07
4.03
4
4.18
4.14
4.1
4.07
4.03
4.18
4.14
4.1
4.06
4.02
4.16

10.07
9.53
9.64
9.71
9.79
9.89
9.5
9.57
10.01
9.86
10.09
9.95
9.8
9.98
9.66
9.84
10.02
9.69
9.87
10.07
9.55
9.72
9.92
10.21
9.58
9.77
9.89
9.97
10.05
10.16
10.18
9.63
9.74
9.81
9.89
10
9.6
9.67
9.74
9.84
9.64
9.51
9.38
9.26
9.14
9.02
9.19
9.08
8.96
8.84
8.73
9
8.89
8.7
8.6
8.5
8.77

197.01
194.14
195.81
197.29
197.5
197.59
195.47
196.88
176.29
185.76
189.1
185.68
185.3
189.07
184.89
188.6
191.35
188.37
191.45
193.54
189.48
192.14
194.09
197.62
191.43
193.31
193.99
195.74
196.07
196.03
195.65
194.08
195.76
197.28
197.5
197.57
195.53
196.95
197.05
197.16
173.63
173.6
176.11
175.88
175.75
174.98
181.75
181.49
188.06
196.66
196.89
202.73
202.87
202.01
201.86
201.28
206.17

197.89
190.72
191.89
192.95
195.08
195.88
193.09
194.32
172.41
175.21
181.73
173.76
174.13
176.61
174.65
177.2
181.3
183.78
186.15
187.83
183.96
187.61
189.69
196.28
185.15
187.21
192.82
194.18
197
197.89
197.32
190.56
191.72
192.59
194.77
195.68
193.03
194.25
196.48
197.04
167.32
168.57
171.58
172.38
173.36
172.25
173.91
174.29
180.02
189.22
189.27
195.88
191.53
190.11
193.66
193.33
197.53

115

23.19
16.5
17.58
17.93
19.75
21.7
18.17
18.57
13.58
12.66
12.85
12.88
13.15
12.89
13.42
13.18
13.71
13.88
14.4
15.69
14.14
14.77
16.1
19.14
14.88
16.26
17.55
17.87
19.67
21.89
23.43
16.53
17.61
17.95
19.76
21.72
18.19
18.58
20.53
22.49
10.98
11.15
11.18
11.32
11.52
11.48
10.49
10.61
10.41
10.14
10.19
9.86
9.75
7.84
8.01
8.14
8.79

-17.8
-12.1
-13.2
-13.6
-15.1
-16.9
-13.6
-14
-8.97
-8.87
-8.62
-9.38
-9.63
-9.41
-9.86
-9.66
-10
-9.6
-10.2
-11.4
-9.96
-10.4
-11.7
-14.2
-10.8
-12.1
-12.7
-13.1
-14.4
-16.3
-17.9
-12.1
-13.2
-13.6
-15.2
-16.9
-13.6
-14
-15.6
-17.3
-6.79
-6.88
-6.81
-6.92
-7.06
-7.12
-6.46
-6.58
-6.43
-6.15
-6.26
-5.74
-5.98
-4.05
-4.07
-4.24
-4.83

2.77
2.85
2.86
2.85
2.8
2.78
2.86
2.85
2.75
2.76
2.8
2.81
2.82
2.84
2.83
2.85
2.83
2.86
2.83
2.81
2.86
2.84
2.82
2.78
2.84
2.82
2.83
2.83
2.78
2.75
2.75
2.83
2.84
2.83
2.78
2.75
2.84
2.83
2.78
2.75
2.93
2.95
2.97
2.98
2.99
3.01
3.08
3.09
3.1
3.11
3.13
3.14
3.15
3.19
3.2
3.21
3.21

190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190

9.7
9.8
9.9
9.9
10
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9
9.1
9.1
9.2
9.2
9.3
9.4
9.5
9.5
9.6
9.7
9.8
9.9
9.9
10
8
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9
9
9.1
9.1
9.2
9.3
9.4
9.4
9.5
9.5
9.6
9.7
9.8
9.8
9.9
10
10
8

3
3
3
3
3
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3

5
5
5
5.25
5.25
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.5
4.75
4.75
4.75
4.75
5
5
5
5
5
5.25
5.25
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.5
4.75
4.75
4.75
4.75
5
4.75
5
5
5
5
5.25
5.25
5.25
5.5
4.25

4.12
4.08
4.04
4.2
4.15
4.18
4.15
4.11
4.08
4.04
4.01
4.19
4.15
4.11
4.08
4.04
4.19
4
4.15
4.11
4.07
4.03
4.17
4.13
4.09
4.04
4
4.16
4.12
4.19
4.15
4.12
4.08
4.05
4.02
4.2
4.16
4.12
4.08
4.05
4.2
4.01
4.16
4.12
4.08
4.04
4.18
4
4.14
4.09
4.05
4.01
4.17
4.12
4.08
4.17
4.16

8.66
8.55
8.45
8.65
8.55
9.75
9.62
9.49
9.36
9.24
9.12
9.29
9.17
9.06
8.93
8.82
9.09
8.71
8.98
8.87
8.68
8.58
8.86
8.75
8.64
8.53
8.43
8.63
8.52
9.87
9.73
9.6
9.47
9.34
9.22
9.39
9.27
9.15
9.03
8.91
9.19
8.8
9.07
8.96
8.85
8.65
8.94
8.56
8.83
8.72
8.61
8.51
8.71
8.6
8.5
8.65
9.85

208.34
208.7
208.16
212.26
212.18
173.68
173.61
176.06
175.46
175.75
174.98
181.75
181.49
181.28
192.45
196.88
202.72
197.09
202.88
202.06
201.36
201.29
206.19
205.88
208.39
208.17
206.13
210.12
212.75
173.68
173.61
174.45
175.46
175.72
174.99
181.76
181.55
181.28
186.47
192.55
198.38
197.1
202.89
202.09
201.69
201.24
206.15
201.05
205.9
208.4
208.18
207.82
211.92
210.37
212.39
216.45
173.61

199.92
197.71
202.36
207.63
206.66
167.13
168.57
171.66
168.84
173.36
172.25
173.91
174.28
174.5
188.88
189.12
195.69
185.89
191.52
187.09
191.79
193.33
197.52
197.42
195.39
201.72
198.7
203.94
205.49
167.13
168.57
170.36
168.84
173.42
172.25
173.91
174.22
174.5
187.63
188.99
195.49
185.89
191.52
187.18
193.09
193.38
197.56
193.28
197.41
195.37
201.71
202.69
207.86
205.03
206.12
208.6
168.57

116

8.87
8.9
9.22
9.42
9.51
11.01
11.19
11.23
11.15
11.55
11.51
10.52
10.65
10.78
10.56
10.23
9.89
10.16
9.78
9.64
8.06
8.18
8.84
8.98
8.82
9.24
9.35
9.59
9.57
11.04
11.22
11.35
11.18
11.59
11.55
10.56
10.69
10.82
11.2
10.69
10.35
10.2
9.81
9.68
10.11
8.31
8.97
8.34
9.02
8.87
9.28
9.48
9.69
9.81
9.81
9.77
11.25

-4.88
-5.09
-5.14
-5.2
-5.4
-6.8
-6.88
-6.82
-7.03
-7.07
-7.13
-6.47
-6.59
-6.73
-6.15
-6.28
-5.76
-6.51
-5.98
-6.19
-4.19
-4.25
-4.85
-5.02
-5.12
-5.17
-5.44
-5.53
-5.62
-6.8
-6.88
-6.92
-7.03
-7.07
-7.13
-6.47
-6.6
-6.74
-6.33
-6.28
-5.78
-6.52
-5.99
-6.2
-6.22
-4.36
-4.96
-4.43
-5.04
-5.14
-5.19
-5.34
-5.41
-5.71
-5.81
-5.82
-6.88

3.21
3.22
3.23
3.27
3.28
2.91
2.92
2.94
2.95
2.97
2.98
3.05
3.07
3.08
3.09
3.1
3.11
3.11
3.12
3.13
3.17
3.18
3.18
3.19
3.2
3.2
3.21
3.26
3.26
2.88
2.89
2.91
2.92
2.94
2.95
3.03
3.04
3.05
3.06
3.08
3.09
3.09
3.1
3.11
3.12
3.16
3.16
3.17
3.17
3.17
3.18
3.19
3.23
3.24
3.24
3.25
2.86

190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190

8.1
8.2
8.3
8.4
8.6
8.7
8.8
8.9
9
9
9.1
9.2
9.3
9.3
9.4
9.4
9.5
9.6
9.7
9.7
9.8
9.9
9.9
10
10
10
8
8.1
8.2
8.3
8.5
8.6
8.7
8.8
8.9
8.9
9
9.1
9.2
9.2
9.3
9.3
9.4
9.5
9.6
9.6
9.7
9.8
9.8
9.9
9.9
9.9
10
10
10
10
8

3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.5

4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.75
4.75
4.75
5
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.75
4.75
4.75
5
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.25
5.5
5.75
6
4.25

4.13
4.09
4.06
4.02
4.17
4.13
4.09
4.06
4.02
4.16
4.13
4.09
4.05
4.19
4.01
4.14
4.1
4.06
4.02
4.18
4.13
4.09
4.18
4.04
4.13
4.16
4.14
4.1
4.07
4.03
4.18
4.14
4.1
4.06
4.03
4.17
4.13
4.1
4.06
4.2
4.02
4.15
4.11
4.07
4.03
4.19
4.14
4.1
4.19
4.05
4.14
4.17
4.01
4.09
4.12
4.17
4.11

9.71
9.58
9.45
9.33
9.37
9.25
9.13
9
8.89
9.16
9.05
8.94
8.83
9.11
8.63
8.91
8.8
8.7
8.59
8.79
8.69
8.58
8.73
8.47
8.62
8.78
9.83
9.69
9.56
9.43
9.48
9.35
9.23
9.1
8.98
9.26
9.14
9.03
8.92
9.2
8.81
9.09
8.88
8.78
8.68
8.88
8.77
8.66
8.81
8.55
8.7
8.86
8.45
8.59
8.75
8.92
9.81

173.44
175.47
175.72
174.98
181.54
181.29
183.57
189.29
193.05
198.84
202.07
201.08
200.97
205.87
201.01
205.86
208.47
208.09
206.35
210.4
208.39
212.54
216.62
212.26
216.21
219.01
173.45
175.47
174.84
174.99
181.55
181.29
181.45
187.17
189.45
195.23
198.02
201.71
200.32
205.16
200.7
205.56
206.97
208.03
206.18
210.19
207.76
210.5
214.61
212.4
216.38
219.19
211.93
215.76
218.49
220.57
173.91

168.73
168.84
173.17
172.27
174.12
174.49
184.92
188.82
185.71
191.27
187.3
191.11
192.96
197.49
193.33
197.45
195.2
201.65
200.74
205.94
204
206.16
208.68
206.36
208.5
212.78
168.73
168.84
170.46
172.25
174.12
174.49
182.04
186.43
185.51
191.11
187.05
193.08
191.58
196.24
193.25
197.36
194.1
201.57
198.66
203.89
202.55
204.99
207.65
206.4
208.57
212.84
206.62
208.92
213.13
215.7
167.87

117

11.37
11.21
11.63
11.58
10.72
10.85
11.38
11.07
10.61
10.22
9.72
10.04
10.32
10.87
8.47
9.15
8.91
9.33
9.56
9.78
9.99
9.84
9.8
10.03
9.99
10.64
11.4
11.25
11.49
11.62
10.76
10.89
11.44
11.2
11.03
10.63
10.12
10.17
10.31
10.87
10.51
11.08
9.09
9.38
9.48
9.72
10
10.02
9.96
10.07
10.02
10.66
10.28
10.25
10.94
12.18
11.38

-7.01
-7.03
-7.09
-7.13
-6.62
-6.74
-6.51
-6.34
-6.51
-6
-6.2
-6.26
-6.43
-6.89
-4.54
-5.15
-5.17
-5.21
-5.47
-5.54
-5.83
-5.82
-5.83
-6.02
-6.05
-6.56
-7.01
-7.03
-7.14
-7.13
-6.62
-6.74
-6.66
-6.49
-6.58
-6.08
-6.2
-6.23
-6.48
-6.93
-6.6
-7.1
-5.36
-5.24
-5.5
-5.59
-5.89
-5.94
-5.92
-6.03
-6.06
-6.57
-6.23
-6.26
-6.81
-7.95
-7.12

2.88
2.9
2.91
2.93
3.01
3.03
3.04
3.05
3.06
3.07
3.08
3.09
3.1
3.1
3.14
3.14
3.15
3.16
3.16
3.21
3.22
3.22
3.23
3.23
3.23
3.2
2.85
2.87
2.88
2.9
2.98
3
3.01
3.02
3.04
3.05
3.06
3.07
3.08
3.08
3.09
3.09
3.13
3.13
3.14
3.19
3.19
3.2
3.21
3.2
3.21
3.18
3.21
3.22
3.18
3.15
2.84

190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190

8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.8
8.9
8.9
9
9.1
9.2
9.2
9.3
9.4
9.5
9.5
9.6
9.7
9.7
9.8
9.8
9.8
9.9
9.9
9.9
9.9
10
10
10
10
10
10
8
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.7
8.8
8.8
8.9
9
9.1
9.1
9.2
9.3
9.4
9.5
9.5
9.6
9.7

3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6

4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.5
4.75
4.75
4.75
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.25
5.5
5.75
6
5.5
5.75
6
6.25
6.75
7
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.5
4.75
4.75
4.75
4.75
5
5
5
5
5
5.25
5.25
5.25

4.07
4.04
4.01
4.18
4.15
4.11
4.07
4.04
4.18
4
4.14
4.1
4.07
4.03
4.16
4.12
4.08
4.04
4.2
4.15
4.11
4.2
4.06
4.15
4.18
4.02
4.1
4.13
4.18
4.06
4.08
4.13
4.19
4.15
4.16
4.08
4.05
4.01
4.19
4.16
4.12
4.08
4.04
4.19
4.01
4.15
4.11
4.07
4.03
4.17
4.13
4.09
4.05
4.01
4.16
4.12
4.07

9.67
9.54
9.41
9.58
9.46
9.33
9.2
9.08
9.36
8.97
9.24
9.12
9.01
8.89
9.18
9.06
8.86
8.76
8.96
8.85
8.74
8.9
8.63
8.78
8.94
8.52
8.67
8.82
9
8.56
8.71
8.89
8.99
9.13
9.23
9.79
9.65
9.52
9.69
9.56
9.44
9.31
9.18
9.46
9.06
9.34
9.22
9.1
8.99
9.27
9.15
9.03
8.84
8.74
8.94
8.82
8.71

174.42
175.36
175.32
181.56
181.3
181.08
184.45
189.08
194.83
189.14
194.74
196.8
199.84
200.74
205.6
205.62
207.66
206.2
210.21
206.92
207.97
212.03
212.28
216.21
219.02
212.08
215.97
219.11
221.24
215.46
218.12
220.13
221.24
222.72
222.8
174.43
175.41
175.32
181.56
181.34
181.09
182.03
186.85
192.6
189.14
194.76
193.83
195.74
200.76
205.63
205.64
207.75
206.16
203.47
207.83
208
209.4

166.92
168.63
169.84
174.11
174.49
174.7
187.42
184.65
190.28
181.13
186.92
188.1
189.84
193.3
197.4
192.56
199.39
198.65
203.87
200.39
204.45
206.96
204.4
206.92
211.76
206.66
208.79
210.99
213.11
209.67
214.03
216.54
219.96
223.41
224.87
166.92
168.45
169.84
174.11
174.33
174.7
184.72
184.92
190.53
181.27
187.05
185.16
189.49
192.94
197.46
192.74
195.38
198.69
195.44
198.48
204.43
202.49

118

11.31
11.43
11.61
10.79
10.92
11.06
11.65
11.06
10.65
10.86
10.48
10.34
10.24
10.54
11.11
10.99
9.39
9.52
9.76
9.98
10.28
10.22
10.02
9.98
10.63
10.31
10.27
10.89
12.09
10.52
11.26
12.54
13.67
15.72
17.5
11.34
11.46
11.64
10.82
10.96
11.09
11.77
11.41
11
10.9
10.53
10.57
10.67
10.55
11.14
11.04
11.12
9.65
9.75
9.93
10.32
10.2

-7.24
-7.29
-7.39
-6.62
-6.75
-6.89
-6.57
-6.63
-6.12
-6.79
-6.27
-6.32
-6.49
-6.59
-7.1
-7.44
-5.35
-5.52
-5.61
-5.97
-6.04
-6.03
-6.1
-6.1
-6.59
-6.24
-6.29
-6.94
-8.11
-6.47
-7.05
-8.22
-9.1
-10.9
-12.4
-7.24
-7.31
-7.39
-6.62
-6.76
-6.89
-6.73
-6.72
-6.22
-6.79
-6.27
-6.47
-6.51
-6.61
-7.1
-7.44
-7.46
-5.62
-5.87
-6.07
-6.06
-6.2

2.86
2.87
2.89
2.96
2.97
2.98
3
3.01
3.02
3.02
3.03
3.04
3.05
3.06
3.06
3.07
3.11
3.12
3.16
3.17
3.17
3.19
3.18
3.19
3.16
3.19
3.19
3.16
3.13
3.2
3.16
3.13
3.14
3.07
3.04
2.83
2.84
2.86
2.93
2.94
2.96
2.97
2.98
3
3
3.01
3.02
3.03
3.04
3.04
3.05
3.06
3.1
3.1
3.15
3.15
3.16

190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190

9.7
9.7
9.8
9.8
9.8
9.8
9.9
9.9
9.9
9.9
9.9
9.9
10
10
10
10
10
10
10
8
8.1
8.3
8.4
8.5
8.6
8.7
8.7
8.8
8.9
9
9
9.1
9.1
9.2
9.3
9.4
9.4
9.5
9.6
9.6
9.7
9.7
9.7
9.8
9.8
9.8
9.8
9.8
9.9
9.9
9.9
9.9
9.9
9.9
9.9
10
10

3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7

5.5
5.75
5.25
5.5
5.75
6
5.5
5.75
6
6.25
6.75
7
5.5
5.75
6
6.25
6.5
6.75
7
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.75
4.75
4.75
5
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.5
5.75
6
6.75
7
5.5
5.75
6
6.25
6.5
6.75
7
6
6.25

4.16
4.19
4.03
4.11
4.14
4.19
4.06
4.09
4.14
4.2
4.17
4.17
4.02
4.04
4.08
4.14
4.15
4.1
4.11
4.06
4.02
4.16
4.13
4.09
4.05
4.02
4.16
4.12
4.08
4.04
4.18
4
4.14
4.1
4.05
4.01
4.17
4.13
4.08
4.17
4.04
4.12
4.15
4.07
4.1
4.15
4.18
4.18
4.03
4.05
4.09
4.15
4.16
4.11
4.12
4.04
4.09

8.87
9.02
8.6
8.75
8.91
9.08
8.64
8.79
8.97
9.08
9.21
9.32
8.54
8.68
8.85
8.96
9.02
9.08
9.18
9.77
9.63
9.67
9.54
9.41
9.28
9.16
9.44
9.32
9.2
9.08
9.37
8.96
9.25
9.13
9.01
8.82
9.02
8.91
8.8
8.95
8.68
8.83
8.99
8.72
8.87
9.05
9.29
9.4
8.61
8.76
8.93
9.04
9.1
9.17
9.27
8.82
8.92

213.31
216.12
212.06
215.96
218.7
220.76
214.73
217.36
219.36
220.46
221.98
222.03
215.82
218.38
220.26
221.23
222.76
222.59
222.62
175.42
175.33
181.35
181.09
181.92
184.91
188.89
194.51
193.84
192.44
196.7
201.57
200.81
205.64
206.36
205.76
203.43
207.8
208.07
207.52
211.48
212.09
215.99
218.74
215.51
218.18
220.21
222.89
222.95
215.99
218.55
220.43
221.41
222.93
222.78
222.88
219.94
220.82

204.94
209.69
206.31
208.51
212.82
215.54
207.97
212.39
214.57
217.98
221.81
222.9
208.61
213.1
215.8
219.42
219.95
222.67
223.83
168.45
169.84
174.32
174.7
184.32
183.96
181.35
187.12
185.15
189.36
192.75
197.79
189.26
192.8
194.2
199.88
195.48
198.51
204.23
201.78
204.39
206.29
208.48
212.78
209.85
214.21
216.61
223.55
224.89
208.67
213.18
215.85
219.51
220.16
222.84
223.66
214.7
218.21

119

10.18
10.84
10.33
10.3
10.98
12.22
10.49
11.24
12.51
13.64
15.67
17.44
10.59
11.38
12.69
13.88
14.2
15.95
17.67
11.49
11.67
10.99
11.13
11.78
11.62
10.99
10.61
10.6
11.06
11
11.62
10.53
11.08
11.24
11.75
9.87
10.05
10.36
10.4
10.36
10.37
10.33
11.01
10.6
11.34
12.62
15.75
17.5
10.62
11.4
12.71
13.9
14.26
16
17.68
12.92
14.16

-6.23
-6.73
-6.27
-6.3
-6.85
-7.97
-6.52
-7.1
-8.3
-9.19
-10.9
-12.5
-6.68
-7.29
-8.47
-9.39
-9.81
-11.2
-12.7
-7.3
-7.38
-6.76
-6.89
-6.74
-6.83
-6.81
-6.29
-6.47
-6.57
-6.62
-7.09
-6.9
-7.45
-7.57
-7.6
-5.97
-6.17
-6.09
-6.31
-6.32
-6.29
-6.32
-6.86
-6.49
-7.07
-8.24
-10.9
-12.3
-6.69
-7.3
-8.48
-9.39
-9.83
-11.2
-12.7
-8.79
-9.77

3.17
3.13
3.16
3.17
3.14
3.11
3.18
3.14
3.11
3.12
3.05
3.02
3.18
3.14
3.11
3.12
3.11
3.05
3.02
2.82
2.83
2.92
2.93
2.94
2.96
2.97
2.98
2.99
3
3.01
3.02
3.02
3.03
3.03
3.04
3.08
3.12
3.13
3.13
3.14
3.14
3.15
3.11
3.15
3.12
3.09
3.03
3
3.16
3.12
3.09
3.1
3.09
3.03
3
3.09
3.1

190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190

10
8
8.2
8.3
8.4
8.5
8.6
8.6
8.7
8.8
8.9
8.9
9
9
9.1
9.2
9.3
9.3
9.4
9.5
9.5
9.6
9.6
9.6
9.7
9.7
9.7
9.7
9.7
9.7
9.8
9.8
9.8
9.8
9.8
9.8
9.8
9.9
9.9
9.9
9.9
10
10
8
8.1
8.2
8.3
8.4
8.5
8.5
8.6
8.7
8.8
8.8
8.9
8.9
9

3.7
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9

7
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.75
4.75
4.75
5
4.75
5
5
5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.25
5.5
5.75
6
6.75
7
5.5
5.75
6
6.25
6.5
6.75
7
5.75
6
6.25
7
6.25
7
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.75
4.75
4.75
5
4.75
5
5

4.06
4.03
4.17
4.14
4.1
4.06
4.03
4.17
4.13
4.09
4.05
4.19
4.01
4.15
4.1
4.06
4.02
4.18
4.13
4.09
4.18
4.05
4.13
4.16
4
4.08
4.11
4.16
4.19
4.19
4.04
4.06
4.1
4.16
4.18
4.13
4.13
4.01
4.05
4.1
4.07
4.05
4.01
4.01
4.18
4.14
4.11
4.07
4.03
4.18
4.14
4.1
4.06
4.2
4.02
4.16
4.11

9.14
9.75
9.78
9.65
9.52
9.39
9.26
9.55
9.42
9.3
9.17
9.47
9.05
9.34
9.22
9.1
8.99
9.19
8.99
8.88
9.04
8.77
8.92
9.08
8.66
8.81
8.96
9.13
9.38
9.48
8.7
8.84
9.02
9.12
9.18
9.25
9.35
8.73
8.9
9
9.22
8.88
9.09
9.73
9.9
9.76
9.63
9.49
9.37
9.65
9.52
9.4
9.27
9.57
9.15
9.44
9.32

221.98
175.33
181.36
181.1
181.24
184.72
184.28
189.83
193.85
191.66
192.72
197.52
196.6
201.45
205.33
205.78
202.91
207.29
207.34
207.55
211.51
207.32
211.19
213.9
211
214.84
217.49
219.46
222.16
222.21
214.56
217.11
218.95
219.99
221.52
221.39
221.47
217.62
219.41
220.28
221.47
220.48
221.44
175.16
181.36
181.14
180.74
183.24
184.29
189.84
193.47
192.5
192.17
196.98
193.2
198.02
201.14

222.32
169.84
174.32
174.69
182.71
183.83
179.53
185.4
185.14
188.23
190.96
195.63
188.97
193.08
192.87
199.87
195.32
198.35
202.95
201.76
204.36
204.03
206.28
210.64
205.32
207.71
212.15
214.47
221.64
222.73
207.23
211.78
214.27
217.71
218.54
221.21
221.87
210.66
213.46
216.99
221.05
218.02
222.28
170.01
174.31
174.53
179.81
182.38
179.52
185.39
185.05
188.94
188.96
194.01
188.76
192.35
193.15

120

18.04
11.71
11.02
11.16
11.75
11.67
11.48
11.1
10.63
11.1
11.34
11.99
10.99
11.56
11.28
11.78
11.9
11.97
10.45
10.44
10.4
10.76
10.72
11.43
10.58
10.57
11.3
12.57
15.68
17.4
10.69
11.47
12.8
13.98
14.33
16.07
17.79
11.56
12.9
14.14
17.99
14.53
18.44
11.87
11.06
11.19
11.6
11.78
11.51
11.13
10.7
11.09
11.25
11.93
11.39
11.99
11.78

-13.2
-7.38
-6.76
-6.89
-6.79
-6.85
-7.07
-6.54
-6.47
-6.63
-6.73
-7.24
-6.91
-7.44
-7.65
-7.61
-8
-8.1
-6.22
-6.33
-6.33
-6.5
-6.52
-7.06
-6.53
-6.57
-7.14
-8.32
-10.9
-12.4
-6.77
-7.37
-8.58
-9.51
-9.92
-11.3
-12.9
-7.63
-8.84
-9.82
-13.2
-10.1
-13.5
-7.52
-6.76
-6.9
-6.85
-6.96
-7.07
-6.54
-6.49
-6.58
-6.75
-7.27
-6.98
-7.56
-7.64

3
2.8
2.89
2.9
2.92
2.93
2.94
2.96
2.97
2.98
2.99
2.99
3
3
3.01
3.02
3.03
3.07
3.11
3.11
3.12
3.12
3.13
3.09
3.12
3.13
3.1
3.07
3.01
2.98
3.14
3.1
3.07
3.08
3.07
3.01
2.98
3.1
3.07
3.08
2.98
3.08
2.98
2.79
2.86
2.88
2.89
2.9
2.92
2.93
2.94
2.95
2.96
2.97
2.98
2.98
2.99

190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
190
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200

9.1
9.2
9.2
9.3
9.4
9.4
9.5
9.5
9.5
9.6
9.6
9.6
9.6
9.6
9.7
9.7
9.7
9.7
9.7
9.7
9.7
9.8
9.8
9.8
9.8
9.9
9.9
9.9
10
10
8
8.1
8.4
8.5
8.6
8.7
8.8
8.9
9.4
9.5
9.6
9.7
9.8
9.9
10
8
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9.3
9.4
9.5
9.6

3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1

5
5
5.25
5.25
5.25
5.5
5.25
5.5
5.75
5.25
5.5
5.75
6
6.75
5.5
5.75
6
6.25
6.5
6.75
7
5.75
6
6.25
7
6
6.25
7
6.25
6.5
3.75
3.75
4
4
4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.5
3.75
4
4
4
4
4
4
4
4.25
4.25
4.25
4.25

4.07
4.03
4.19
4.14
4.1
4.19
4.05
4.14
4.17
4.01
4.09
4.12
4.17
4.2
4.05
4.07
4.12
4.17
4.19
4.14
4.14
4.02
4.06
4.12
4.08
4.01
4.06
4.02
4
4.01
4.03
4.01
4.18
4.15
4.12
4.09
4.06
4.02
4.17
4.13
4.1
4.07
4.04
4.01
4.17
4.01
4.19
4.16
4.13
4.09
4.06
4.03
4
4.17
4.14
4.11
4.08

9.19
9.08
9.29
9.17
8.96
9.12
8.86
9.01
9.17
8.74
8.89
9.04
9.22
9.47
8.78
8.93
9.1
9.21
9.27
9.34
9.44
8.81
8.98
9.08
9.3
8.86
8.96
9.17
8.84
8.9
9.61
9.48
9.57
9.45
9.32
9.2
9.09
8.98
8.69
8.59
8.49
8.4
8.3
8.2
8.36
9.6
9.68
9.55
9.43
9.31
9.19
9.07
8.96
8.87
8.67
8.57
8.48

207.4
202.91
207.3
206.42
207.41
211.38
207.51
211.4
214.13
211.03
214.87
217.53
219.51
222.23
213.1
215.64
217.56
218.59
220.07
219.95
220.04
217.22
219.01
219.88
221.08
220.41
220.64
221.65
219.86
221.12
169.99
174.29
182.52
184.48
187.4
189.75
190.11
190.51
195.48
197.76
200.41
199.87
201.18
201.15
211.81
170.78
182.52
182.38
187.06
186.51
190.45
190.29
189.19
195.66
195.63
200.76
199.97

201.83
195.47
198.5
200.99
201.53
204.12
204.91
207.1
211.43
205.3
207.68
212.11
214.42
221.58
205.9
210.44
212.87
216.4
217.04
219.71
220.68
209.38
211.98
215.49
219.54
211.76
217.09
221.32
219.15
219.6
164.84
163.62
173.27
174.61
175.41
178.59
186.72
188.24
195.17
196.35
193.23
193.46
198.95
199.53
204.24
163.63
173.27
173.41
175.4
174.68
187.94
188.04
179.26
195.01
195.25
194.32
192.89

121

11.76
11.94
12.01
12.33
10.56
10.5
10.84
10.8
11.5
10.62
10.6
11.33
12.6
15.8
10.79
11.58
12.91
14.1
14.45
16.19
17.93
11.53
12.86
14.11
17.92
13.13
14.5
18.38
15.01
15.48
10.49
9.96
10.21
10.13
9.9
9.96
10.51
10.63
8.32
8.14
7.88
7.89
8.13
8.22
7.42
10.37
10.25
10.33
9.97
10.04
10.59
10.68
10.3
10.37
8.42
7.96
7.92

-7.48
-8
-8.1
-8.17
-6.43
-6.42
-6.49
-6.52
-7.06
-6.55
-6.58
-7.15
-8.33
-11
-6.87
-7.47
-8.69
-9.61
-10
-11.5
-13
-7.66
-8.89
-9.88
-13.3
-9.3
-10.2
-13.6
-10.4
-11
-6.23
-6.33
-6.3
-6.27
-6.21
-6.17
-6.13
-6.19
-3.92
-3.8
-3.87
-3.88
-3.9
-3.99
-3.42
-6.3
-6.3
-6.41
-6.23
-6.38
-6.09
-6.21
-6.57
-5.9
-4.02
-3.87
-3.91

2.99
3
3.05
3.05
3.09
3.1
3.09
3.1
3.07
3.1
3.11
3.07
3.05
2.99
3.11
3.08
3.05
3.06
3.05
2.99
2.96
3.08
3.05
3.06
2.96
3.06
3.06
2.96
3.06
3.04
2.85
2.87
2.96
2.98
2.99
3.01
3.02
3.04
3.24
3.25
3.27
3.28
3.29
3.3
3.37
2.84
2.93
2.95
2.96
2.98
2.99
3.01
3.03
3.18
3.23
3.24
3.25

200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200

9.7
9.8
9.9
10
8.2
8.3
8.4
8.5
8.6
8.7
8.8
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
8.2
8.3
8.4
8.5
8.6
8.7
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
8.1
8.2
8.3
8.4
8.5
8.6
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
10
8
8.1
8.2

3.1
3.1
3.1
3.1
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.5
3.5
3.5

4.25
4.25
4.5
4.5
4
4
4
4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4
4
4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4
4
4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.75
4
4
4

4.04
4.01
4.18
4.14
4.2
4.17
4.13
4.1
4.07
4.04
4.01
4.18
4.15
4.12
4.08
4.05
4.02
4.19
4.15
4.12
4.17
4.14
4.11
4.08
4.05
4.02
4.19
4.16
4.12
4.09
4.06
4.03
4.2
4.16
4.12
4.09
4.18
4.15
4.12
4.09
4.06
4.03
4.2
4.17
4.13
4.1
4.07
4.03
4
4.17
4.13
4.1
4.06
4.2
4.19
4.16
4.13

8.38
8.28
8.44
8.35
9.79
9.66
9.54
9.41
9.29
9.17
9.06
8.96
8.85
8.65
8.56
8.46
8.36
8.52
8.42
8.33
9.78
9.65
9.52
9.39
9.27
9.16
9.05
8.94
8.83
8.64
8.54
8.44
8.6
8.51
8.4
8.31
9.89
9.76
9.63
9.5
9.37
9.26
9.15
9.03
8.92
8.81
8.62
8.52
8.43
8.59
8.48
8.39
8.29
8.54
10.01
9.87
9.74

201.18
201.15
207.73
212.68
182.57
182.38
184.34
187.26
189.8
190.49
189.12
194.24
195.62
198.03
199.97
199.83
201.03
208.34
209.21
212.44
182.38
182.24
187.06
189.6
190.53
189.19
193.22
195.62
196.14
199.91
199.68
200.98
207.75
207.39
208.97
212.39
182.38
182.24
184.84
188.2
190.42
188.71
193.1
195.62
196.15
198.02
199.68
200.99
200.43
206.77
208.98
208.92
212.92
218.96
178.96
182.24
182.1

198.95
199.54
202.06
203.92
173.12
173.41
174.76
175.56
178.85
188.6
185.69
193.53
194.98
193.78
192.89
193.69
198.97
204.3
203.73
204.33
173.42
173.55
175.57
178.75
187
179.27
191.83
194.98
192.46
192.95
193.66
199.15
202.06
201.36
204.14
204.71
173.42
173.56
174.36
177.35
188.54
183.02
191.24
194.98
192.46
191.6
193.51
199.16
197.19
200.86
204.13
204.52
204.73
211.47
173.86
173.56
173.7

122

8.17
8.27
7.61
7.41
10.28
10.36
10.28
10.05
10.11
10.74
10.76
10.47
10.49
8.29
7.96
8.04
8.29
7.73
7.68
7.54
10.4
10.48
10.1
10.15
10.68
10.37
10.5
10.53
10.47
8.1
8.09
8.34
7.69
7.73
7.81
7.66
10.43
10.52
10.31
10.23
10.81
10.65
10.5
10.57
10.51
10.22
8.23
8.38
8.38
7.8
7.85
7.93
7.74
7.61
10.87
10.55
10.64

-3.92
-4.01
-3.5
-3.48
-6.32
-6.41
-6.37
-6.32
-6.27
-6.2
-6.44
-6
-6.02
-4.07
-3.93
-4
-4.03
-3.5
-3.55
-3.59
-6.41
-6.52
-6.33
-6.28
-6.24
-6.57
-6.09
-6.03
-6.22
-4.05
-4.02
-4.04
-3.54
-3.64
-3.66
-3.7
-6.4
-6.52
-6.48
-6.37
-6.21
-6.49
-6.1
-6.04
-6.22
-6.2
-4.15
-4.06
-4.19
-3.7
-3.67
-3.76
-3.8
-3.53
-6.38
-6.51
-6.63

3.27
3.28
3.34
3.35
2.9
2.92
2.94
2.95
2.97
2.98
3
3.16
3.17
3.22
3.23
3.24
3.25
3.32
3.33
3.34
2.89
2.91
2.93
2.94
2.96
2.97
3.13
3.15
3.16
3.2
3.22
3.23
3.29
3.31
3.32
3.33
2.86
2.88
2.9
2.91
2.93
2.94
3.11
3.12
3.13
3.15
3.19
3.2
3.22
3.28
3.29
3.3
3.31
3.32
2.84
2.85
2.87

200
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200
200
200
200
200
200
200
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200
200
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200
200
200
200
200
200
200

8.3
8.4
8.5
8.6
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
10
8
8.1
8.2
8.3
8.4
8.5
8.9
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
9.9
10
10
8
8.1
8.2
8.3
8.4
8.8
8.9
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.8
9.9
9.9
10
8

3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.8

4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4
4
4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.5
4.75
4
4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.5
4.75
4.75
4

4.09
4.06
4.03
4
4.17
4.14
4.11
4.07
4.04
4.01
4.18
4.14
4.11
4.07
4.04
4.17
4.17
4.13
4.1
4.07
4.04
4.01
4.18
4.15
4.11
4.08
4.05
4.02
4.18
4.15
4.11
4.08
4.04
4.18
4.01
4.14
4.14
4.11
4.08
4.05
4.02
4.19
4.16
4.12
4.09
4.06
4.02
4.19
4.16
4.12
4.09
4.05
4.18
4.02
4.15
4.11
4.12

9.61
9.48
9.36
9.25
9.13
9.01
8.9
8.8
8.6
8.51
8.67
8.56
8.47
8.37
8.27
8.52
9.99
9.86
9.73
9.59
9.47
9.35
9.23
9.1
9
8.89
8.78
8.59
8.75
8.65
8.55
8.45
8.35
8.6
8.25
8.5
9.97
9.84
9.7
9.57
9.46
9.32
9.2
9.09
8.98
8.87
8.76
8.83
8.74
8.63
8.53
8.43
8.68
8.33
8.58
8.48
9.96

187.11
190.3
189.2
186.16
194.16
196.15
195.69
199.87
200.57
200.44
206.93
208.98
208.74
209.45
212.64
218.62
178.77
182.1
184.05
190.43
189.2
186.16
193.09
195.96
195.67
197.18
200.37
200.37
206.94
205.69
208.74
208.97
209.19
215.18
212.44
218.46
178.63
181.96
188.06
189.2
186.16
193.1
195.96
195.67
195.09
199.66
200.62
206.87
206.54
208.74
208.31
209.2
215.19
208.88
214.89
218.16
178.49

175.71
188.32
179.27
172.72
193.54
192.46
187.69
193.34
199.19
197.19
196.33
204.13
204.39
204.53
204.69
211.5
174.16
173.7
175.05
182.79
179.28
172.73
191.83
192.32
187.78
192.73
195.56
197.26
196.33
200.31
204.38
201.64
204.79
211.63
206.24
213.32
174.3
173.84
177.51
179.28
172.73
191.83
192.32
187.78
191.53
193.19
199.03
196.49
201.1
204.38
199.95
204.78
211.62
205.98
213.12
214.01
174.44

123

10.23
10.83
10.43
10.33
10.67
10.54
10.34
10.22
8.56
8.42
7.69
7.89
7.98
8.02
7.86
7.75
11
10.67
10.59
10.54
10.46
10.36
10.69
10.59
10.38
10.5
10.44
8.56
7.73
8
8.02
7.95
8.15
8.03
8.04
7.95
11.13
10.79
10.41
10.49
10.39
10.73
10.62
10.42
10.7
10.37
10.73
7.87
8.01
8.06
7.94
8.19
8.07
8.33
8.24
8.12
11.25

-6.43
-6.21
-6.57
-6.98
-6.13
-6.23
-6.42
-6.18
-4.19
-4.2
-3.78
-3.69
-3.79
-3.86
-3.92
-3.67
-6.47
-6.62
-6.59
-6.32
-6.57
-6.98
-6.21
-6.25
-6.43
-6.29
-6.26
-4.32
-3.8
-3.87
-3.8
-3.9
-3.98
-3.73
-4.03
-3.79
-6.58
-6.73
-6.48
-6.57
-6.97
-6.22
-6.25
-6.44
-6.41
-6.31
-6.3
-3.91
-3.84
-3.82
-3.94
-4
-3.74
-4.09
-3.86
-3.92
-6.68

2.89
2.9
2.92
2.93
3.09
3.11
3.12
3.13
3.18
3.19
3.26
3.27
3.28
3.29
3.3
3.3
2.82
2.84
2.86
2.87
2.89
2.91
3.07
3.08
3.1
3.11
3.12
3.17
3.23
3.24
3.25
3.26
3.27
3.28
3.28
3.29
2.81
2.83
2.85
2.86
2.88
3.04
3.05
3.07
3.08
3.1
3.11
3.21
3.22
3.23
3.24
3.25
3.25
3.26
3.26
3.27
2.8

200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210

8.1
8.2
8.3
8.7
8.8
8.9
9
9.1
9.2
9.3
9.3
9.4
9.5
9.6
9.7
9.7
9.8
9.8
9.9
10
8
8.1
8.2
8.3
8.7
8.8
8.9
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.7
9.8
9.9
10
10
8
8.1
8.2
8.7
8.8
8.9
9
9.1
9.2
9.3
9.6
9.7
9.8
9.9
10
8
8.1

3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3.1
3.1

4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.5
4.75
4.75
4.75
4
4
4
4
4.25
4.25
4.25
4.25
4.25
4.25
4.5
4.5
4.5
4.5
4.5
4.75
4.75
4.75
4.75
5
3.5
3.5
3.5
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
3.5
3.5

4.09
4.06
4.03
4.2
4.16
4.13
4.1
4.07
4.03
4
4.2
4.16
4.13
4.09
4.06
4.19
4.03
4.15
4.12
4.08
4.1
4.06
4.03
4
4.17
4.14
4.11
4.07
4.04
4.01
4.17
4.14
4.1
4.07
4.03
4.16
4.12
4.09
4.05
4.18
4.07
4.04
4.02
4.18
4.15
4.12
4.09
4.06
4.04
4.01
4.18
4.15
4.12
4.09
4.06
4.05
4.03

9.83
9.69
9.57
9.43
9.3
9.19
9.07
8.96
8.85
8.74
9.01
8.82
8.71
8.61
8.51
8.76
8.41
8.66
8.56
8.46
9.94
9.8
9.68
9.55
9.41
9.28
9.17
9.06
8.94
8.83
8.99
8.8
8.7
8.59
8.49
8.74
8.64
8.54
8.44
8.7
9.65
9.52
9.4
9.26
9.15
9.04
8.93
8.81
8.71
8.61
8.65
8.55
8.45
8.36
8.27
9.64
9.51

181.82
189.2
186.16
193.1
194.97
195.68
195.13
194.78
200.05
199.95
207.03
206.49
208.75
208.13
209.21
215.2
208.9
214.91
214.6
217.73
178.34
189.2
186.16
186.02
193.46
195.58
195.13
194.79
200.63
199.69
206.68
207.22
208.03
209.22
208.94
214.95
214.58
214.16
217.41
222.4
170.97
172.79
172.7
183.9
183.75
183.63
190.2
199.88
200.26
200.23
208.68
211.07
210.99
211.05
211.49
172.78
172.7

173.98
179.28
172.73
191.83
190.58
187.77
191.17
191.24
196.41
192.56
196.38
201.16
204.38
200.13
204.78
211.62
205.65
212.76
213.81
213.77
174.59
179.28
172.73
172.88
189.39
187.61
191.17
191.23
199.03
192.5
200.99
202.7
199.98
204.78
205.78
212.91
214.02
213.57
213.27
218.21
164.62
165.53
165.62
178.49
178.81
178.93
186.87
195.51
195.72
195.58
199.82
203.86
204.12
204.16
202.95
165.54
165.63

124

10.92
10.52
10.42
10.76
10.65
10.45
10.71
10.81
10.64
10.54
9.71
8.14
8.1
7.99
8.23
8.11
8.37
8.27
8.41
8.26
11.38
10.55
10.45
10.55
10.76
10.48
10.74
10.85
10.8
10.6
10.03
8.27
8.03
8.27
8.41
8.32
8.46
8.55
8.38
9.14
10.5
10.41
10.47
9.52
9.58
9.64
9.54
9.15
9.16
9.19
7.14
7.23
7.28
7.3
7.24
10.44
10.5

-6.84
-6.56
-6.97
-6.22
-6.34
-6.44
-6.43
-6.55
-6.37
-6.63
-5.86
-3.95
-3.83
-3.96
-4.01
-3.76
-4.12
-3.88
-3.98
-4.06
-6.8
-6.56
-6.97
-7.09
-6.43
-6.45
-6.44
-6.55
-6.31
-6.64
-5.86
-4.02
-3.97
-4.03
-4.14
-3.89
-4
-4.13
-4.2
-4.84
-6.31
-6.4
-6.49
-5.29
-5.36
-5.44
-5.24
-4.97
-5.03
-5.09
-3.17
-3.16
-3.23
-3.28
-3.34
-6.39
-6.48

2.82
2.84
2.85
3.01
3.03
3.04
3.06
3.07
3.08
3.1
3.15
3.19
3.2
3.21
3.23
3.23
3.24
3.24
3.25
3.26
2.79
2.81
2.83
2.84
3
3.02
3.03
3.04
3.06
3.07
3.14
3.18
3.19
3.2
3.21
3.21
3.22
3.23
3.24
3.24
2.86
2.88
2.9
3.06
3.07
3.09
3.1
3.12
3.13
3.15
3.27
3.28
3.29
3.31
3.32
2.85
2.87

210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210

8.2
8.6
8.7
8.8
8.9
9
9.1
9.2
9.5
9.6
9.7
9.8
9.9
10
8
8.1
8.5
8.6
8.7
8.8
8.9
9
9.1
9.4
9.5
9.6
9.7
9.8
9.9
10
8
8.5
8.6
8.7
8.8
8.9
9
9.1
9.4
9.5
9.6
9.7
9.8
9.9
8.4
8.5
8.6
8.7
8.8
8.9
9
9.3
9.4
9.5
9.6
9.7
9.8

3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.1
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4

3.5
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
3.5
3.5
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
4
3.5
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4

4
4.19
4.16
4.13
4.1
4.07
4.04
4.02
4.19
4.16
4.13
4.1
4.07
4.04
4.03
4.01
4.19
4.16
4.14
4.11
4.08
4.05
4.02
4.19
4.17
4.13
4.11
4.08
4.05
4.02
4.01
4.17
4.14
4.12
4.09
4.06
4.03
4
4.17
4.14
4.11
4.08
4.06
4.03
4.18
4.15
4.12
4.1
4.07
4.04
4.01
4.18
4.15
4.12
4.09
4.06
4.03

9.39
9.36
9.25
9.13
9.02
8.9
8.8
8.7
8.73
8.64
8.53
8.44
8.35
8.25
9.62
9.5
9.47
9.35
9.23
9.12
9
8.89
8.79
8.81
8.72
8.62
8.52
8.42
8.33
8.24
9.61
9.45
9.33
9.22
9.1
8.99
8.88
8.77
8.8
8.7
8.6
8.51
8.41
8.32
9.56
9.44
9.32
9.21
9.08
8.97
8.86
8.97
8.78
8.69
8.59
8.5
8.4

172.61
183.9
183.78
183.63
183.51
195.08
200.19
200.23
208.68
208.53
210.98
211.05
209.98
213.11
172.69
172.61
183.89
183.78
183.63
183.51
188.51
195.26
200.22
208.61
208.53
210.98
211.1
210.88
210.42
213.01
172.6
183.78
183.66
183.5
185.33
191.62
195.7
200.53
208.46
210.98
210.98
209.47
208.27
213.12
183.77
183.66
183.5
183.17
189.48
191.67
195.95
208.07
209.39
210.9
209.97
207.5
210.92

165.71
178.49
178.61
178.93
179.05
194.94
195.75
195.58
199.82
200.66
204.12
204.17
197.82
204.41
165.63
165.72
178.5
178.61
178.94
179.05
193
195.45
195.59
199.89
200.67
204.13
203.98
204.34
203.79
205.57
165.73
178.62
178.73
179.06
189.29
195.29
195.07
189.6
200.74
204.13
203.92
201.89
202.5
205.66
178.63
178.74
179.07
183.05
192.83
194.88
189.41
200.69
202.72
203.85
197.84
198.81
203.39

125

10.56
9.54
9.61
9.67
9.74
9.57
9.2
9.22
7.18
7.26
7.32
7.34
7.22
7.29
10.52
10.58
9.57
9.64
9.7
9.77
10.17
9.66
9.25
7.31
7.3
7.36
7.38
7.44
7.5
7.42
10.61
9.66
9.73
9.79
10.23
10.03
9.67
9.01
7.43
7.4
7.43
7.47
7.65
7.46
9.69
9.75
9.82
10.1
10.13
10.08
9.43
9.35
7.56
7.47
7.34
7.54
7.56

-6.57
-5.28
-5.37
-5.44
-5.52
-4.98
-5.03
-5.1
-3.18
-3.27
-3.24
-3.29
-3.47
-3.43
-6.47
-6.56
-5.28
-5.36
-5.43
-5.52
-5.19
-5.05
-5.1
-3.29
-3.28
-3.26
-3.32
-3.38
-3.54
-3.51
-6.55
-5.36
-5.44
-5.52
-5.32
-5.1
-5.11
-5.26
-3.39
-3.27
-3.34
-3.49
-3.65
-3.52
-5.35
-5.44
-5.51
-5.51
-5.21
-5.18
-5.26
-5.3
-3.44
-3.36
-3.52
-3.68
-3.64

2.89
3.03
3.05
3.06
3.08
3.09
3.11
3.12
3.24
3.25
3.27
3.28
3.3
3.31
2.84
2.86
3
3.02
3.03
3.05
3.07
3.08
3.1
3.21
3.23
3.24
3.26
3.27
3.28
3.3
2.83
2.99
3.01
3.02
3.04
3.06
3.07
3.09
3.2
3.22
3.23
3.24
3.26
3.27
2.96
2.98
3
3.01
3.03
3.05
3.06
3.15
3.19
3.2
3.22
3.23
3.25

210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210

9.9
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9.2
9.3
9.4
9.5
9.6
9.7
9.8
8.2
8.3
8.4
8.5
8.6
8.7
8.8
9.1
9.2
9.3
9.4
9.5
9.6
9.7
8.2
8.3
8.4
8.5
8.6
8.7
8.8
9.1
9.2
9.3
9.4
9.5
9.6
10
8.1
8.2
8.3
8.4
8.5
8.6
8.7
9
9.1
9.2
9.3
9.4
9.5
9.6

3.4
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8

4
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
4
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
4
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
4.25
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
4

4
4.19
4.16
4.13
4.1
4.07
4.04
4.02
4.19
4.16
4.13
4.1
4.07
4.04
4.01
4.19
4.17
4.14
4.11
4.08
4.05
4.02
4.19
4.16
4.13
4.1
4.08
4.05
4.02
4.17
4.15
4.12
4.09
4.06
4.03
4
4.17
4.14
4.11
4.08
4.06
4.03
4.19
4.18
4.15
4.13
4.1
4.07
4.04
4.01
4.18
4.15
4.12
4.09
4.06
4.03
4.01

8.3
9.67
9.55
9.43
9.31
9.19
9.07
8.96
9.07
8.96
8.77
8.67
8.58
8.48
8.38
9.78
9.65
9.53
9.41
9.29
9.17
9.05
9.16
9.05
8.94
8.75
8.66
8.56
8.46
9.77
9.64
9.52
9.4
9.27
9.15
9.04
9.14
9.03
8.93
8.74
8.65
8.55
8.47
9.88
9.75
9.63
9.51
9.38
9.26
9.14
9.24
9.13
9.02
8.92
8.73
8.63
8.53

212.95
183.77
183.65
183.5
183.38
186.35
191.29
192.29
208.05
207.96
210.83
210.02
207.28
208.1
212.95
183.77
183.65
183.53
183.38
183.74
188.69
192.31
208.15
207.93
210.44
209.95
207.61
208.1
210.1
183.65
183.53
183.37
183.68
186.6
191.92
191.82
207.91
208.91
208.75
207.55
208.1
208.01
222.12
183.64
183.53
183.41
183.04
186.36
186.9
191.85
203.2
207.8
208.75
206.94
207.26
208.01
207.85

205.45
178.63
178.75
179.07
179.19
192.92
193.95
189.22
200.42
200.84
203.92
197.68
192.27
202.68
205.45
178.64
178.75
178.87
179.2
188.62
194.19
189.21
199.83
200.93
203.87
197.75
193.41
202.68
204.69
178.76
178.87
179.2
187.7
193.04
189.4
186.59
200.86
202.57
201.54
193.48
202.68
203.84
214.5
178.76
178.88
179
183.19
192.74
187.29
186.39
201.24
201.01
201.54
193.2
199.05
203.84
201.81

126

7.53
9.72
9.78
9.85
9.92
10.51
10.08
9.79
9.36
9.45
7.6
7.38
7.34
7.79
7.57
9.74
9.81
9.87
9.94
10.48
10.44
9.83
9.37
9.48
9.53
7.51
7.41
7.83
7.8
9.83
9.9
9.97
10.46
10.61
9.91
9.74
9.51
9.61
9.63
7.55
7.87
7.97
7.35
9.86
9.93
9.99
10.28
10.64
10.36
9.76
9.98
9.62
9.66
9.47
7.86
8.01
7.98

-3.61
-5.34
-5.43
-5.5
-5.59
-5.33
-5.19
-5.32
-5.3
-5.4
-3.46
-3.55
-3.76
-3.76
-3.63
-5.33
-5.42
-5.51
-5.58
-5.47
-5.31
-5.33
-5.32
-5.4
-5.37
-3.66
-3.76
-3.77
-3.74
-5.41
-5.5
-5.58
-5.48
-5.39
-5.34
-5.41
-5.4
-5.45
-5.58
-3.88
-3.79
-3.85
-3.32
-5.4
-5.49
-5.58
-5.57
-5.4
-5.58
-5.42
-5.39
-5.49
-5.59
-5.93
-3.91
-3.87
-3.97

3.26
2.93
2.95
2.97
2.99
3
3.02
3.04
3.12
3.13
3.18
3.19
3.21
3.22
3.23
2.9
2.92
2.94
2.96
2.97
2.99
3.01
3.09
3.11
3.12
3.17
3.18
3.2
3.21
2.89
2.91
2.93
2.95
2.96
2.98
3
3.08
3.1
3.11
3.16
3.17
3.18
3.34
2.87
2.88
2.9
2.92
2.94
2.96
2.97
3.06
3.07
3.09
3.1
3.15
3.16
3.17

210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210
210

9.9
10
8
8.1
8.2
8.3
8.4
8.5
8.6
8.9
9
9.1
9.2
9.3
9.4
9.5
9.9
10

3.8
3.8
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9

4.25
4.25
3.75
3.75
3.75
3.75
3.75
3.75
3.75
4
4
4
4
4
4
4
4.25
4.25

4.2
4.17
4.19
4.16
4.13
4.1
4.08
4.05
4.02
4.19
4.16
4.13
4.1
4.07
4.04
4.01
4.17
4.14

8.55
8.45
10
9.87
9.74
9.61
9.49
9.36
9.24
9.34
9.22
9.11
9.01
8.9
8.71
8.62
8.53
8.43

221.45
222.21
183.64
183.52
183.41
183.25
184.82
186.9
191.41
199.42
203.09
210.28
206.94
206.78
207.86
207.74
222.36
222.08

212.31
216.03
178.77
178.88
179
179.33
190.87
187.3
186.28
200.2
201.39
204.04
193.2
193.31
202.92
203.48
215.88
217.25

127

7.31
7.47
9.88
9.95
10.02
10.09
10.71
10.39
9.83
10.38
10.08
9.7
9.5
9.56
8.11
8.09
7.51
7.61

-3.34
-3.38
-5.38
-5.48
-5.57
-5.65
-5.49
-5.57
-5.43
-5.52
-5.48
-5.47
-5.94
-6.02
-3.99
-3.96
-3.41
-3.47

3.31
3.33
2.84
2.86
2.87
2.89
2.91
2.93
2.95
3.03
3.05
3.06
3.08
3.09
3.13
3.15
3.3
3.31

APPENDIX D
SPICE CIRCUIT FILE FOR REPRESENTING THE
BROADBAND MODEL
.option acct nomod post=2
.net v(p2) vin rout=50 rin=50
vin p1
L
R
Cs1
Cs2
Rs1
Rs2
Cbr

0 AC 1
p1
3
p1
p2
1
2
p1

3
p2
1
2
0
0
p2

Ls
Rs
Cp1
Cp2
Rp1
Rp2
Cbr

.param
+ Ls = OPT1(9.1n,.1n,100n)
+ Rs = OPT1(20,.1,10k)
+ Rp1 = OPT1(1.8,.1,100k)
+ Rp2 = OPT1(1.8,.1,100k)
+ Cp1 = OPT1(0.327p,.001p,10p)
+ Cp2 = OPT1(0.315p,.001p,10p)
+ Cbr = OPT1(.02p,.0001p,10p)
.AC data=measured optimize=opt1
+ results=comp1,comp2,comp3,comp4,comp5,comp6,comp7,comp8
+ model=converge
.model converge opt relin=1e-4 relout=1e-4 close=10 itropt=30
.measure ac comp1 err1 par(s11m) s11(m)
.measure ac comp2 err1 par(s11p) s11(p)
.measure ac comp3 err1 par(s12m) s12(m)
.measure ac comp4 err1 par(s12p) s12(p)
.measure ac comp5 err1 par(s21m) s21(m)
.measure ac comp6 err1 par(s21p) s21(p)
.measure ac comp7 err1 par(s22m) s22(m)
.measure ac comp8 err1 par(s22p) s22(p)
.ac data=measured
.data measured
FREQ
s11m
s11p
1.000e+08 4.708e-02
1.586e+00 4.750e-02
1.100e+09 2.093e-01
1.709e+01 2.085e-01
2.100e+09 3.884e-01
3.140e+01 3.828e-01
3.100e+09 5.369e-01
4.427e+01 5.250e-01
4.100e+09 6.483e-01
5.588e+01 6.299e-01

s12m
s12p
s21m
s21p
2.126e+01 9.558e-01 -1.586e+00
21.59029
6.618e+01 9.166e-01 -1.709e+01
64.92491
5.874e+01 8.299e-01 -3.140e+01
57.20321
4.807e+01 7.175e-01 -4.427e+01
46.39028
3.809e+01 5.985e-01 -5.588e+01
36.3496

128

s22m
s22p
9.558e-01 9.166e-01

8.299e-01

7.175e-01

5.985e-01

5.100e+09 7.243e-01 2.912e+01

6.622e+01 7.002e-01 27.37482

4.804e-01

-6.622e+01 4.804e-01

.enddata
.param freq=100MEG,s11m = 0 , s11p = 0, s12m = 0, s12p = 0, s21m =0,
+s21p =0, s22m =0 , s22p = 0
.probe
.end

129

APPENDIX E
SPICE BSIM3 MOS MODEL PARAMETERS
MOSIS WAFER ACCEPTANCE TESTS
RUN: T59L
TECHNOLOGY: SCN15
Run type: SKD

VENDOR: AMIS
FEATURE SIZE: 1.6 microns

INTRODUCTION: This report contains the lot average results obtained by

MOSIS from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar measurements
on a selected wafer are also attached.
COMMENTS: SCNA16_AMIS

TRANSISTOR PARAMETERS

W/L

MINIMUM
Vth

4.0/1.6

SHORT
Idss
Vth
Vpt

20.0/1.6

WIDE
Ids0

20.0/1.6

LARGE
Vth
Vjbkd
Ijlk
Gamma

50/50

K' (Uo*Cox/2)
Low-field Mobility

N-CHANNEL P-CHANNEL

UNITS

0.56

-0.98

volts

184
0.53
10.0

-70
-0.94
-10.0

uA/um
volts
volts

< 2.5

< 2.5

pA/um

0.57
16.2
<50.0
0.59

-0.89
-14.4
<50.0
0.48

volts
volts
pA
V^0.5

36.2
654.17

-11.8
213.24

uA/V^2
cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameter XL in your
SPICE model card.

130

Design Technology
----------------SCN (lambda=0.8)

POLY2 TRANSISTORS

W/L

XL (um)
------0.00

N-CHANNEL P-CHANNEL

MINIMUM
Vth

4.8/3.2

SHORT
Vth

9.6/3.2

LARGE
Vth

28.8/28.

K' (Uo*Cox/2)

UNITS

0.79

-1.24

volts

0.78

-1.20

volts

0.80

-1.19

volts

-6.4

uA/V^2

21.4

FOX TRANSISTORS
Vth

GATE
Poly

N+ACTIVE
>15.0

BIPOLAR PARAMETERS

W/L

NPN

UNITS

145
40.6
---

volts
volts

146
40.4
---

volts
volts

147
40.0
0.1

volts
volts

147
39.7
0.2
7.3
7.3
6.8

volts
volts
volts
volts
volts

2X1
Beta
V_early
Vce,sat

2X1

2X2
Beta
V_early
Vce,sat

2X2

2X4
Beta
V_early
Vce,sat

2X4

2X8
Beta
V_early
Vce,sat
BVceo
BVcbo
BVebo

2X8

PROCESS PARAMETERS
UNITS
Sheet Resistance
(ohms/sq)
Contact Resistance
(ohms)
Gate Oxide Thickness

POLY

P+ACTIVE
<-15.0

N+

P+

50.6

72.0

26.7

22.4

50.6

38.5

25.5

15.0

312(Angstrom)

131

POLY2

UNITS
volts

PBASE
2233.7

M1

M2

0.05

0.03
0.06

PROCESS PARAMETERS
Sheet Resistance
Contact Resistance

CAPACITANCE PARAMETERS
UNITS
Area (substrate)
aF/um^2
Area (N+active)
aF/um^2
Area (P+active)
aF/um^2
Area (poly)
aF/um^2
Area (poly2)
aF/um^2
Area (metal1)
aF/um^2
Fringe (substrate)
aF/um
Fringe (poly)
aF/um
Fringe (metal1)
aF/um
Overlap (N+active)
aF/um
Overlap (P+active)
aF/um

CIRCUIT PARAMETERS
Inverters
Vinv
Vinv
Vol (100 uA)
Voh (100 uA)
Vinv
Gain
Ring Oscillator Freq.
DIV64 (31-stg,5.0V)
Ring Oscillator Power
DIV64 (31-stg,5.0V)

N_W
1604

UNITS
ohms/sq
ohms

N+

P+

POLY

POLY2

M1

M2

281

306

38

38

24

15

1106

718

50

26

1089

711
45

22

46

23

595

N_W
120

37
95

160

33

--

62

43
54

173
209

UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0

1.78
2.07
0.42
4.32
2.27
-14.81
39.64
1.56

volts
volts
volts
volts
volts

MHz
uW/MHz/gate

T59L SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: Nov 21/05
* LOT: T59L
WAF:
* Temperature_parameters=Default
.MODEL CMOSN NMOS (
+VERSION = 3.1
TNOM
+XJ
= 3E-7
NCH
+K1
= 0.9173819
K2

4104

= 27
= 7.5E16
= -0.0779907

132

LEVEL
TOX
VTH0
K3

=
=
=
=

49
3.12E-8
0.5409116
5.2214589

+K3B
= -2.0477019
+DVT0W
= 0
+DVT0
= 0.6532209
+U0
= 665.0923514
+UC
= 3.63243E-11
+AGS
= 0.1427933
+KETA
= -7.429545E-3
+RDSW
= 3E3
+WR
= 1
+XL
= 0
+DWB
= 3.22545E-8
+CIT
= 0
+CDSCB
= 4.628903E-5
+DSUB
= 0.6811067
+PDIBLC2 = 3.644817E-3
+PSCBE1 = 2.153596E9
+DELTA
= 0.01
+PRT
= 0
+KT1L
= 0
+UB1
= -7.61E-18
+WL
= 0
+WWN
= 1
+LLN
= 1
+LWL
= 0
+CGDO
= 1.73E-10
+CJ
= 2.728312E-4
+CJSW
= 1.418737E-10
+CJSWG
= 6.4E-11
+CF
= 0
*
.MODEL CMOSP PMOS (
+VERSION = 3.1
+XJ
= 3E-7
+K1
= 0.4513608
+K3B
= -2.2238332
+DVT0W
= 0
+DVT0
= 1.2670818
+U0
= 236.8923827
+UC
= -1.08562E-10
+AGS
= 0.3517425
+KETA
= 0.0171334
+RDSW
= 3E3
+WR
= 1
+XL
= 0
+DWB
= 3.857544E-8
+CIT
= 0
+CDSCB
= 1.091488E-4
+DSUB
= 0.2873
+PDIBLC2 = 3.271335E-3
+PSCBE1 = 3.515038E9
+DELTA
= 0.01
+PRT
= 0
+KT1L
= 0
+UB1
= -7.61E-18
+WL
= 0
+WWN
= 1
+LLN
= 1

W0
DVT1W
DVT1
UA
VSAT
B0
A1
PRWG
WINT
XW
VOFF
CDSC
ETA0
PCLM
PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
)

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

6.188757E-7
0
0.4064766
1.609559E-9
9.853147E4
2.341079E-6
0
-0.0268408
7.304915E-7
0
-0.0425986
6.858689E-7
-0.1370205
1.729473
-0.1
5.005E-10
50.6
-1.5
0.022
-5.6E-11
1
0
0
2
1.73E-10
0.99
0.99
0.99

TNOM
= 27
NCH
= 2.4E16
K2
= 2.379699E-5
W0
= 9.577236E-7
DVT1W
= 0
DVT1
= 0.3925911
UA
= 3.833306E-9
VSAT
= 1.147309E5
B0
= 6.717724E-6
A1
= 0
PRWG
= 0.0666911
WINT
= 7.565065E-7
XW
= 0
VOFF
= -0.0877184
CDSC
= 2.924806E-5
ETA0
= 0.24103
PCLM
= 4.991354E-10
PDIBLCB = -1E-3
PSCBE2 = 5.273648E-10
RSH
= 72
UTE
= -1.5
KT2
= 0.022
UC1
= -5.6E-11
WLN
= 1
WWL
= 0
LW
= 0

133

NLX
= 1E-8
DVT2W
= 0
DVT2
= -0.4909984
UB
= 2.035974E-18
A0
= 0.6386801
B1
= 5E-6
A2
= 1
PRWB
= -0.0939874
LINT
= 2.509222E-7
DWG
= 2.275794E-8
NFACTOR = 0.7290874
CDSCD = 1.072715E-6
ETAB
= -0.0459516
PDIBLC1 = 0.0110461
DROUT
= 0.0795384
PVAG
= 0.2222499
MOBMOD = 1
KT1
= -0.11
UA1
= 4.31E-9
AT
= 3.3E4
WW
= 0
LL
= 0
LWN
= 1
XPART
= 0.5
CGBO
= 1E-9
MJ
= 0.5586398
MJSW
= 0.100001
MJSWG
= 0.100001

LEVEL
= 49
TOX
= 3.12E-8
VTH0
= -0.8476404
K3
= 13.3278347
NLX
= 1E-6
DVT2W
= 0
DVT2
= -0.0453853
UB
= 1.487688E-21
A0
= 0.4834382
B1
= 5E-6
A2
= 0.364
PRWB
= -0.190187
LINT
= 9.631446E-8
DWG
= -2.13917E-8
NFACTOR = 0.2508342
CDSCD = 1.497572E-4
ETAB
= -0.0338317
PDIBLC1 = 7.477411E-4
DROUT
= 1E-3
PVAG
= 14.985
MOBMOD = 1
KT1
= -0.11
UA1
= 4.31E-9
AT
= 3.3E4
WW
= 0
LL
= 0
LWN
= 1

+LWL
+CGDO
+CJ
+CJSW
+CJSWG
+CF
*

=
=
=
=
=
=

0
2.09E-10
3.036607E-4
1.663774E-10
3.9E-11
0

CAPMOD
CGSO
PB
PBSW
PBSWG
)

=
=
=
=
=

2
2.09E-10
0.8
0.8091787
0.8091787

134

XPART
CGBO
MJ
MJSW
MJSWG

=
=
=
=
=

0.5
1E-9
0.4463108
0.106692
0.106692

APPENDIX F
SPICE BSIM3 MOS MODEL PARAMETERS
MOSIS WAFER ACCEPTANCE TESTS
RUN: T5AV
TECHNOLOGY: SCN05
Run type: DED

VENDOR: AMIS
FEATURE SIZE: 0.5 microns

INTRODUCTION: This report contains the lot average results obtained by

MOSIS from measurements of MOSIS test structures on each wafer of
this
fabrication
lot.
SPICE
parameters
obtained
from
similar
measurements on a selected wafer are also attached.
COMMENTS: American Microsystems, Inc. C5

TRANSISTOR PARAMETERS

W/L

MINIMUM
Vth

3.0/0.6

SHORT
Idss
Vth
Vpt

20.0/0.6

WIDE
Ids0

20.0/0.6

LARGE
Vth
Vjbkd
Ijlk
Gamma

50/50

K' (Uo*Cox/2)
Low-field Mobility

N-CHANNEL P-CHANNEL

UNITS

0.76

-0.93

volts

478
0.66
10.0

-260
-0.91
-10.0

uA/um
volts
volts

< 2.5

< 2.5

pA/um

0.69
11.5
<50.0
0.48

-0.97
-11.7
<50.0
0.58

volts
volts
pA
V^0.5

56.3
450.00

-19.1
152.66

uA/V^2
cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameter XL in your
SPICE model card.

135

Design Technology
----------------SCMOS_SUBM (lambda=0.30)
SCMOS (lambda=0.35)

FOX TRANSISTORS
Vth

GATE
Poly

PROCESS PARAMETERS
N+
UNITS
Sheet Resistance
82.6
(ohms/sq)
Contact Resistance
61.2
(ohms)
Gate Oxide Thickness 138
(angstrom)
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance

P+

N+ACTIVE
>15.0

POLY

104.3

23.4

158.4

17.0

M3
0.05
0.78

XL (um)
------0.10
0.00

P+ACTIVE
<-15.0

PLY2_HR
1021

UNITS
volts

POLY2
43.4

M1

M2

0.09

0.10

28.4

N\PLY
844

N_W
836

XW (um)
-----0.00
0.20

0.83

UNITS
ohms/sq
ohms

COMMENTS: N\POLY is N-well under polysilicon.

CAPACITANCE PARAMETERS
N+
P+
POLY
UNITS
Area (substrate)
430 729
87
aF/um^2
Area (N+active)
2496
aF/um^2
Area (P+active)
2411
aF/um^2
Area (poly)
aF/um^2
Area (poly2)
aF/um^2
Area (metal1)
aF/um^2
Area (metal2)
aF/um^2
Fringe (substrate)
315 266
aF/um
Fringe (poly)
aF/um
Fringe (metal1)
aF/um
Fringe (metal2)
aF/um
Overlap (N+active)
218
aF/um
Overlap (P+active)
238
aF/um

136

POLY2

920

M1

M2

M3

32

17

11

37

17

12

56

16

10

34

14

50

36
75

58

39

62

38

29

57

35
50

N_W
40

CIRCUIT PARAMETERS
Inverters
Vinv
Vinv
Vol (100 uA)
Voh (100 uA)
Vinv
Gain
Ring Oscillator Freq.
DIV256 (31-stg,5.0V)
D256_WIDE (31-stg,5.0V)
Ring Oscillator Power
DIV256 (31-stg,5.0V)
D256_WIDE (31-stg,5.0V)

UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0

2.01
2.27
0.12
4.87
2.45
-17.71

volts
volts
volts
volts
volts

100.64
159.61

MHz
MHz

0.48
1.00

COMMENTS: SUBMICRON

137

uW/MHz/gate
uW/MHz/gate

T5AV SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: Jan 17/06
* LOT: T5AV
WAF:
* Temperature_parameters=Default
.MODEL CMOSN NMOS (
+VERSION = 3.1
TNOM
+XJ
= 1.5E-7
NCH
+K1
= 0.86934
K2
+K3B
= -7.7863337
W0
+DVT0W
= 0
DVT1W
+DVT0
= 3.4348179
DVT1
+U0
= 456.5594281
UA
+UC
= 4.911677E-12
VSAT
+AGS
= 0.1241863
B0
+KETA
= -3.522862E-3
A1
+RDSW
= 1.185055E3
PRWG
+WR
= 1
WINT
+XL
= 1E-7
XW
+DWB
= 3.839878E-8
VOFF
+CIT
= 0
CDSC
+CDSCB
= 0
ETA0
+DSUB
= 0.0683907
PCLM
+PDIBLC2 = 2.466948E-3
PDIBLCB
+PSCBE1 = 6.382393E8
PSCBE2
+DELTA
= 0.01
RSH
+PRT
= 0
UTE
+KT1L
= 0
KT2
+UB1
= -7.61E-18
UC1
+WL
= 0
WLN
+WWN
= 1
WWL
+LLN
= 1
LW
+LWL
= 0
CAPMOD
+CGDO
= 2.18E-10
CGSO
+CJ
= 4.276473E-4
PB
+CJSW
= 3.05451E-10
PBSW
+CJSWG
= 1.64E-10
PBSWG
+CF
= 0
PVTH0
+PK2
= -0.0283047
WKETA
)
*
.MODEL CMOSP PMOS (
+VERSION = 3.1
TNOM
+XJ
= 1.5E-7
NCH
+K1
= 0.5428151
K2
+K3B
= -0.8301998
W0
+DVT0W
= 0
DVT1W
+DVT0
= 2.4704748
DVT1
+U0
= 216.5840726
UA
+UC
= -5.85255E-11
VSAT
+AGS
= 0.1453224
B0
+KETA
= -2.485273E-3
A1
+RDSW
= 2.918751E3
PRWG
+WR
= 1
WINT
+XL
= 1E-7
XW

9207

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

27
1.7E17
-0.0988243
1E-8
0
0.3738587
2.474049E-12
1.900944E5
2.736758E-6
9.530913E-6
0.0758314
2.386617E-7
0
0
2.4E-4
2.048817E-3
2.547959
-2.660252E-3
2.111041E-4
82.6
-1.5
0.022
-5.6E-11
1
0
0
2
2.18E-10
0.9144082
0.8
0.8
0.1217063
-0.0170737

LEVEL
= 49
TOX
= 1.38E-8
VTH0
= 0.6559455
K3
= 25.6950929
NLX
= 1E-9
DVT2W
= 0
DVT2
= -0.0888276
UB
= 1.48719E-18
A0
= 0.554448
B1
= 5E-6
A2
= 0.3098765
PRWB
= 0.0183752
LINT
= 7.693389E-8
DWG
= -5.133171E-9
NFACTOR = 0.5292434
CDSCD
= 0
ETAB = -2.086697E-4
PDIBLC1 = 1
DROUT
= 0.9718917
PVAG
= 9.957243E-3
MOBMOD = 1
KT1
= -0.11
UA1
= 4.31E-9
AT
= 3.3E4
WW
= 0
LL
= 0
LWN
= 1
XPART
= 0.5
CGBO
= 1E-9
MJ
= 0.4304161
MJSW
= 0.2124257
MJSWG
= 0.2124257
PRDSW = -183.5419446
LKETA = 4.032308E-3

=
=
=
=
=
=
=
=
=
=
=
=
=

27
1.7E17
8.112852E-3
1E-8
0
0.4435188
2.970391E-9
1.774764E5
1.269528E-6
5.751071E-4
-0.042716
2.688789E-7
0

LEVEL
= 49
TOX
= 1.38E-8
VTH0
= -0.9479551
K3
= 8.2586198
NLX
= 4.895055E-8
DVT2W
= 0
DVT2
= -0.0848431
UB
= 1.615966E-21
A0
= 0.8022077
B1
= 5E-6
A2
= 0.3010313
PRWB
= -0.0213817
LINT
= 1.026522E-7
DWG
= -1.344484E-8

138

+DWB
+CIT
+CDSCB
+DSUB
+PDIBLC2
+PSCBE1
+DELTA
+PRT
+KT1L
+UB1
+WL
+WWN
+LLN
+LWL
+CGDO
+CJ
+CJSW
+CJSWG
+CF
+PK2
)
*

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

1.896646E-8
0
0
0.9878092
3.166899E-3
5.816939E9
0.01
0
0
-7.61E-18
0
1
1
0
2.38E-10
7.238338E-4
2.831971E-10
6.4E-11
0
3.73981E-3

VOFF
CDSC
ETA0
PCLM
PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
PVTH0
WKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

-0.0583573
2.4E-4
0.5122687
2.2234682
-0.0462103
5.495972E-10
104.3
-1.5
0.022
-5.6E-11
1
0
0
2
2.38E-10
0.965516
0.99
0.99
5.98016E-3
4.760239E-3

139

NFACTOR = 0.7322289
CDSCD
= 0
ETAB
= -0.0755207
PDIBLC1 = 0.0366688
DROUT
= 0.1847743
PVAG
= 5.527226E-3
MOBMOD = 1
KT1
= -0.11
UA1
= 4.31E-9
AT
= 3.3E4
WW
= 0
LL
= 0
LWN
= 1
XPART
= 0.5
CGBO
= 1E-9
MJ
= 0.4984422
MJSW
= 0.3097831
MJSWG
= 0.3097831
PRDSW
= 14.8598424
LKETA = -5.025748E-3

APPENDIX G
DE-EMBEDDING
In order to facilitate the characterization of the test device separately, bond pads are
generally added to the device under test. However, parasitics associated with the bond pads
degrade the performance of the DUT. It is generally an accepted practice to measure these
parasitics separately from the DUT, and subsequently subtract their effects from the total
measurement carried out on the DUT. This method ensures the accuracy of the
measurements carried out on the DUT without the distorting influence of the additional
parasitics. A typical equivalent circuit with the DUT and the additional parasitics is
illustrated in Fig. G.1 [36]. Parasitic resistances are assumed to be in series with the DUT,
while the parasitic capacitances associated with bond pads appear in parallel to the DUT
and the parasitic resistances.
The two common techniques in de-embedding include: open and short deembedding [36]. Open and short bond pads (dummies) are added solely for measuring the
parasitic elements. Fig. G.2 (a) shows the DUT with bond pads. The open dummy
comprises of just the bond pads minus the DUT (Fig. G.2 (b)). The short dummy (Fig. G.2
(c)) is similar to the open dummy with the exception that low ohmic connections are
introduced between the ground and the signal lines. Therefore, while the open dummy
provides the influence of solely the bond pads, the short dummy incorporates the influence
of bond pads and any series resistance. In this technique, the measured S-parameters are
converted to Y-parameters. The performance of the DUT is then determined from the Y
matrix as:

YDUT = YTotal YOpen

140

Figure G.1: Equivalent circuit showing DUT and parasitic elements.

(a)

(b)

(c)
Figure G.2: (a) DUT (b) open dummy and (c) short dummy.

141

APPENDIX H
SPICE NETLIST INDICATING EXTRACTED PARASITICS
* Circuit Extracted by Tanner Research's L-Edit Version 10.20 / Extract
Version 10.20 ;
* TDB File:
C:\ChetanThesisDocs\ChetanThesisFolderSubmit\exptExtractSimulations\vco0.
5umPadFrameLayout_1.tdb
* Cell: Min_Frame
Version 1.66
* Extract Definition File: mamis05.ext
* Extract Date and Time: 11/02/2006 - 11:52
* Warning: Layers with Unassigned AREA Capacitance.
*
<subs>
*
<ndiff resistor>
*
<poly2 resistor>
*
<poly2 wire>
*
<HiRes resistor>
*
<allsubs>
*
<nwell resistor>
*
<LPNP collector>
*
<LPNP emitter>
*
<pdiff resistor>
* Warning: Layers with Unassigned FRINGE Capacitance.
*
<poly resistor>
*
<poly wire>
*
<subs>
*
<ndiff resistor>
*
<poly2 resistor>
*
<poly2 wire>
*
<HiRes resistor>
*
<n well wire>
*
<pmos capacitor>
*
<allsubs>
*
<nwell resistor>
*
<LPNP collector>
*
<LPNP emitter>
*
<pdiff resistor>
*
<p2p1 capacitor>
*
<nmos capacitor>
* Warning: Layers with Zero Resistance.
*
<subs>
*
<pmos capacitor>
*
<Pad Comment>
*
<allsubs>
*
<LPNP collector>
*
<LPNP emitter>
*
<p2p1 capacitor>
*
<nmos capacitor>
* NODE NAME ALIASES
*
1 = Vtune (-446.5,1128)
*
1 = U2/DATA (-464,1500)
*
2 = Vout2 (-1067.5,815.5)

142

*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*

2
3
3
3
6
6
6
6
6
6
6
6
6
6
6
6
8
9
9
9
9
9
9
9
9

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

U4/DATA (-1064,1500)
Vout1 (-1136.5,1057.5)
U0/Vout2 (-863,496)
U5/DATA (-1364,1500)
U7/GndAct (-2170,-300)
U7/GndPP (-2172,-300)
U7/GndM1A (-2170,-300)
U7/GndM2B (-1924,-300)
U7/GndM2A (-1730,-300)
PADGND_1/GndM2A (1500,-300)
PADGND_1/GndAct (1843,-300)
PADGND_1/GndPP (1841,-300)
PADGND_1/GndM1A (1844,-300)
PADGND_1/GndM2B (1844,-300)
PADGND_1/GND (1500,-198)
Vgnd (-933.5,1345.5)
PADGND_1/VddM2A (1940,-300)
U7/VddM2A (-2170,-300)
U7/VddNW (-1830,-300)
U7/VddNP (-1829,-300)
U7/VddAct (-1827,-300)
U7/VddM1A (-1826,-300)
U7/VddM2B (-1826,-300)
U7/VDD (-1500,-198)
Vdd (-576,1058)

Cpar1 1 0 5.3867104p
Cpar2 2 0 2.2923291p
Cpar3 3 0 2.2957852p
Cpar4 4 0 1.754857p
Cpar5 5 0 471.71943f
Cpar6 6 0 18.805708p
Cpar7 7 0 1.0639936p
Cpar8 8 0 2.1271403p
Cpar9 9 0 10.575163p
C745 1 6 10.726064p *External bond pad capacitance
C742 2 6 10.726064p *External bond pad capacitance
C739 3 6 10.726064p *External bond pad capacitance
L716 4 7
C557 3 6 5.89764p *Internal bond pad capacitance at output Vout1
C357 2 6 5.89764p *Internal bond pad capacitance at output Vout2
C16 6 6 10.726064p *External bond pad capacitance
C1 9 6 10.726064p *External bond pad capacitance...................
.....................................
......................................
* Total Nodes: 9
* Total Elements: 458
* Total Number of Shorted Elements not written to the SPICE file: 0
* Output Generation Elapsed Time: 00.219 sec
* Total Extract Elapsed Time: 11.531 sec (11.531 sec)
.END

143

Figure H.1: Oscillator single ended output including the effect of extracted additional
integrated internal and external bond pad capacitances. The oscillation frequency, fosc is
1.7627 GHz.

144

VITA
Chetan S. Salimath is a native of Bangalore located in Karnataka, India. He earned his
Bachelor of Engineering in Electronics and Communication from Visveswariah
Technological University, Belgaum, India, in 2002. He will receive his masters degree in
electrical engineering from Louisiana State University, Baton Rouge, Louisiana, in 2006.
His research interests include design of radio frequency integrated circuits, digital and
mixed signal integrated circuits. He has worked as a graduate assistant computer
programmer at the Department of Psychology, LSU since April 2004. In his free time he
enjoys reading, singing and running.

145