HW3 solution

Problem 1: pn Junction Diode Current Components

Consider a silicon pn step junction diode with NA = 1×1019 cm-3 and ND = 1×1018 cm-3,
𝑢𝑛 = 300, 𝑢𝑝 = 350 maintained at T = 300K. The minority carrier lifetimes in the p-side
and n-side are τn=10-9 s and τp=10-8 s, respectively.
a) Calculate the minority carrier densities at the edges of the depletion region when the
applied voltage (VA) is 0.6 V.
b) Find the electron and hole current density components as a function of distance on
both sides of the junction, for the applied bias voltage of part (a).
c) Calculate the location of the plane (i.e. value of x) at which the electron and hole
current densities are equal in magnitude, for the applied voltage of part (a).

a) Assuming low-level injection, the minority carrier concentrations at the edges of the
depletion region are given by: Lecture 7 slides 11

𝑛𝑖 2 𝑞𝑉𝐴 1020
𝑛𝑝 (−𝑥𝑝 ) = (𝑒 𝑘𝑇 ) = 19 𝑒 23 = 9.74 ∗ 1010 𝑐𝑚−3
𝑁𝐴 10
2
𝑛𝑖 𝑞𝑉 𝐴 1020
𝑝𝑛 (𝑥𝑛 ) = (𝑒 𝑘𝑇 ) = 18 𝑒 23 = 9.74 ∗ 1011 𝑐𝑚−3
𝑁𝐷 10

b) The diffusion coefficients and minority carrier diffusion lengths are:

𝑘𝑇
𝐷𝑛 = 𝑢 = 7.8 𝑐𝑚2 /𝑆
𝑞 𝑛
𝑘𝑇
𝐷𝑝 = 𝑢 = 9.1𝑐𝑚2 /𝑆
𝑞 𝑝
𝐿𝑛 = √𝐷𝑛 𝜏𝑛 = 8.8 ∗ 10−5 cm

𝐿𝑝 = √𝐷𝑝 𝜏𝑝 = 3 ∗ 10−4 cm

Hole current in the n-type quasi-neutral region and electron current in the p-type quasi-
neutral region are: Lecture 7 slides 16

𝑞𝑉𝐴 𝑥−𝑥𝑛
𝑛𝑖 2 −
𝐽𝑝 (𝑥) = 𝑞𝐷𝑃 𝑁 (𝑒 𝑘𝑇 − 1) 𝑒 𝐿𝑝
= 1.6 × 10−19 × 9.1 ×
𝐷 𝐿𝑝
𝑥−𝑥𝑛 𝑥−𝑥𝑛
1020 − −
𝒆𝟐𝟑 𝑒 𝐿𝑝
=0.0047𝑒 𝐿𝑝
A/cm^2
1018 ×3×10−4

𝑞𝑉𝐴 𝑥+𝑥𝑝
𝑛𝑖 2
𝐽𝑛 (𝑥) = 𝑞𝐷𝑛 𝑁 (𝑒 𝑘𝑇 − 1) 𝑒 𝐿𝑝
= 1.6 × 10−19 × 7.8 ×
𝐴 𝐿𝑛

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 𝑥+𝑥𝑝 𝑥+𝑥𝑝
1020
𝒆𝟐𝟑 𝑒 𝐿𝑛 =0.00138𝑒 𝐿𝑛 A/cm^2
1019 ×8.8×10−5

c) In the n-type quasi-neutral region,

Jp= Jn =Jtotal/2=(0.0047+0.00138)/2 = 0.00304A/cm2
 Jp(x)= 0.0047e-(x-xn)/Lp=> (x-xn)/Lp =0.436 => (x-xn)=1.31×10-4 cm

Problem 2: Small-signal capacitance of a Schottky contact

The following data were obtained for metal contacts to uniformly doped n-type silicon, of equal
area:

a) If Schottky theory applies, which metal will probably has the higher work
function?
b) Which data correspond to more lightly doped silicon? Justify your answer.

The small-signal capacitance of a Schottky contact to uniformly doped n-type Si is

dQdep K s 0 A K s 0 A
CJ    1/ 2
dVA W  2 K s 0 
 qN Vbi  VA 
 D  .
1  2V  VA  

  2 bi
C J  A qN D K s 0 
2

a) Discussion 4 slides 24. The x-intercept is the built-in potential Vbi= ΦBn(EcEF). Since
ΦBn=ΦM-χ, a metal with a larger work function will result in larger Vbi. From the plot, Vbi
for metal 2 is ~1V while Vbi for metal 1 is ~0.4V. Since Vbi for Metal 2 is larger, Metal 2
has the larger work function.

b) Discussion 4 slides 24. The slope of the plot is inversely proportional to the dopant
concentration, i.e. lower ND corresponds to a steeper slope. Thus, the contact with
Metal 1 corresponds to more lightly doped silicon.

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 Problem 3: pn Diode Charge Control Model
Given: junction area A = 100 m2; minority-carrier lifetimes n = 10-6 s (p side) and p = 10-7 s
(n side); T = 300K. for NA =1016 cm-3 is n =1200 cm2/Vs and the hole mobility for ND =1018
cm-3 is p =150 cm2/Vs.

Since the minority carrier concentrations (np and pn) are enhanced within the quasi-neutral
regions, the diode is forward biased. The majority carrier concentrations (pp and nn) are not
significantly enhanced, however, so low-level injection conditions prevail.
a) Determine the applied voltage VA.
b) What are the p-side and n-side dopant concentrations?
c) What are the excess minority carrier densities at the edges of the depletion region, i.e. np(-
xp) and pn(xn)? Do low-level injection conditions prevail in the quasi-neutral regions of the
diode? Explain.
d) Calculate the minority carrier diffusion lengths Ln and Lp.
e) Calculate the excess minority carrier charge stored (QP and QN) within the quasi-neutral
regions.
f) Calculate the diode current using the charge control model. Is it dominated by hole injection
into the n side or by electron injection into the p side?

a) Since low-level injection conditions prevail, the “Law of the Junction” holds: within the
depletion region and at the edges of the depletion region, np=ni2  exp{qVA/kT}.
np and pn each are enhanced by a factor 1010 at the edges of the depletion region,
so 1010 = exp{qVA/kT}  VA = (kT/q)  ln(1010) = 10 × (kT/q)  ln(10) = 10 × (60 mV) = 0.6
V. Lecture 7 slides 11.
b) pp = NA = 1016 cm-3 and nn = ND = 1018 cm-3
c) np(-xp) = np(-xp) – np0(-xp) = 1014 – 104  1014 cm-3. pn(xn) = pn(xn) – pn0(xn) = 1012 – 102 
1012 cm-3
The majority carrier concentrations (pp and nn) are not significantly enhanced within the
quasi-neutral regions, so low-level injection conditions prevail.
d) the electron mobility for NA =1016 cm-3 is n =1200 cm2/Vs and the hole mobility for ND
=1018 cm-3 is p =150 cm2/Vs.
The electron diffusion constant Dn= n (kT/q)=1200×0.026=31.2 cm2/s.
The hole diffusion constant, Dp= p (kT/q)=150×0.026=3.9 cm2/s.

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 The electron minority carrier diffusion length
Ln = Dn t n = 31.2 ´10-6 = 5.5 ´10-3 cm = 55 m
And the hole minority carrier diffusion length
Lp = D p t p = 3.9 ´10-7 = 6.24 ´10-4 cm= 0.624 m
e) Excess minority carrier charge is stored within the quasi-neutral regions:
Lecture 9 slides 4.
QP = qApn(xn) Lp = 1.6×10-19×(100×10-8)×1012× 6.24×10-4 = 9.98×10-17 C (624
holes
QN = qAnp(-xp) Ln = 1.6×10-19×(100×10-8)×1014× 5.5×10-3 = 8.8×10-14 C
(550,000 electrons)
f) The diode current is found using the charge control model:
Lecture 9 slides 6 and 7.
Ip(xn) = QP/p= 9.98×10-17/10-7 = 9.98×10-10 A
In(-xp) = QN/n = 8.8×10-14/10-6 = 8.8×10-8 A
I = Ip(xn) + In(-xp) = 8.9×10-8 A
The current is dominated by electron injection from the more heavily doped n side into
the p side.

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 Problem 4: pn Junction Small-Signal Model
a) Derive the small-signal model for the diode in Problem 3. You may assume that the series
resistance of the quasi-neutral regions (RS) is negligible.
b) Plot 1/C2 vs. VA for -2 V < VA < 0 V. What is the value of the extrapolated x-intercept? You
may assume that the Boltzmann approximation is valid.

a) Lecture 9 slides 8, 10 and 11.

From Problem 3, IDC= 8.9×10-8 A. The small-signal resistance

R = (kT/q)/IDC=0.026/8.9×10-8 =2.9×105 .

The built-in potential is

𝐸𝑔 𝑘𝑇 𝑁𝐴
𝑉𝑏𝑖 = + 𝑙𝑛 =1.12/2 + 0.026×ln(1016/1010)=0.919V
2𝑞 𝑞 𝑛𝑖

The depletion width

2ℇ𝑆 (𝑉𝑏𝑖 −𝑉𝐴 )
𝑊=√ = 0.2um
𝑞𝑁𝐴

Depletion capacitance
𝐴ℇ𝑆
𝐶𝑗 = = 5 ∗ 10−14 𝐹
𝑊

Diffusion capacitance
tn 10-6
CD = = = 0.39 ´10-11 F
R 2.95 ´105

Total capacitance C=Cj+ CD = 0.39×10-11 F.

A schematic of the small-signal model is shown below.

b) Under reverse bias, the stored minority carrier charge within the quasi-neutral
regions is negligible and so the depletion capacitance (CJ) is the dominant
component of small-signal capacitance. From Lecture 13 Slide 14,

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 1 2(Vbi -V A ) 2(Vbi -V A ) 1
= = -12 = 1.25 ´103 ´ (Vbi -V A ) 2
Cj2
es A qN A 10 ´10 ´1.6 ´10 ´10
2 12 -19 16
F
The plot of 1/C2 vs. VA is shown below.

Extrapolating to zero, the x-intercept occurs at VA = Vbi = 0.919 V.

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