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Limitations - Conventional - Tubes

This document discusses RF and microwave engineering topics including microwave tubes, semiconductor microwave devices, passive components, and microwave measurements. It covers the working principles and characteristics of klystrons, magnetrons, traveling wave tubes, and backward wave oscillators. It also discusses tunnel diodes, Gunn diodes, IMPATT diodes, TRAPATT diodes, microwave transistors, and parametric amplifiers.

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0% found this document useful (0 votes)
407 views9 pages

Limitations - Conventional - Tubes

This document discusses RF and microwave engineering topics including microwave tubes, semiconductor microwave devices, passive components, and microwave measurements. It covers the working principles and characteristics of klystrons, magnetrons, traveling wave tubes, and backward wave oscillators. It also discusses tunnel diodes, Gunn diodes, IMPATT diodes, TRAPATT diodes, microwave transistors, and parametric amplifiers.

Uploaded by

sahil
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ECL404

RF & Microwave Engineering

1
Contents:
▪ Introduction: RF & Microwave spectrum, Historical Background, Typical application
of RF & Microwaves,
▪ Microwave Tubes: Limitation of conventional tubes in microwaves, Two cavity and
multicavity Klystron, Reflex Klystron, Magnetron, Travelling wave tube, Backward
wave oscillator – working principles, characteristics.
▪ Semiconductor Microwave Device: Tunnel diode, Gunn diode, IMPATT diode,
TRAPATT diode, Microwave bipolar transistor, hetero-junction bipolar transistor,
parametric amplifier.
▪ Passive Components: S- matrix, Directional coupler, Bethe-hole coupler, Magic tee,
Hybrid ring, Circulator, Isolator.
▪ Microwave Measurement: Measurement of VSWR-Low, Medium and High,
Measurement of power, Bolometer, Frequency measurement, Impedance
measurement. Application of Microwaves: Introduction to satellite communication,
Radar, Industrial application of microwaves.
2
Conventional Tubes

Vacuum Tubes – Triode, Tetrode, Pentode etc.


• Electrons flow through vacuum
• Contains a cathode, an anode and one or more electrodes called grids.
• Voltage controlled devices
• Can be operated at very high voltages
• Can produce high powers
• Useful below microwave frequencies

3
High Frequency Limitations of Conventional Tubes
• Conventional tubes fails to operate above 1 GHz due to-
➢ Stray Reactance
▪ Inter-electrode Capacitance
▪ Lead Inductance
➢ Transit Time/angle effect
➢ Gain BW Product Limitation
➢ Skin Effect: Conductor Losses
➢ Radiation Losses
➢ Dielectric Losses

Microwave Theory and Techniques | Prof. Girish Kumar, IIT Bombay 4


Inter-electrode Capacitance
• A capacitance exists when two pieces of metal are separated Triode
by a dielectric.
• The capacitance between two electrodes is called as inter-
Plate/
electrode capacitance and it is given by- Anode

C
gp

𝗌𝐴
𝐶= Grid Cpk
𝑑

1 Cgk
𝑋𝐶 =
2𝜋𝑓𝐶

5
Lead Inductance
• The common lead inductance is the inductance associated with the electrodes
Triode
of the vacuum tubes.
Plate/
𝑳 = 𝒍Τ𝝁𝑨 and 𝑿𝑳 = 𝟐𝝅𝒇𝑳 Anode

Lp
• Input impedance matching problem at microwave frequencies.
• Small fraction of input reach to terminal for amplification.
Lg
• The inductance of the cathode is common to both the Grid
Grid
and anode circuit. This provides the path for regenerative feedback.
• These inductances and inter-electrode capacitance form
unwanted tuned circuit.
➢ Produce parasitic oscillations
Lk
Cathode

6
Transit Time/angle effect
• The time taken by an electron to travel from cathode to anode is Triode
called as transit time and it is given by 𝑟 = 𝑑Τ𝒗𝟎 and transit angle is given Plate/
by 𝜽𝒈= 𝑚𝑟 = 𝑚𝒅Τ𝒗𝟎 Anode
• At low frequencies, the transit time is very small (𝑟 ≪ T) i.e. the
electrons reach instantaneously the anode plate from cathode. 𝑑
Grid
• At high frequencies, the potential between cathode and grid
changes 10 to 100 times during the electron transit as T ≪ 𝑟. 𝑣0

• The grid potential during negative half cycle removes the energy given to the Cathode
electron in positive half cycle. 𝑽𝒔

• Electron may oscillate back and forth in the cathode grid space or return to the
cathode.
T
• To minimize this effect, the distance between the electrodes is to be reduced and high voltage must be applied
but this will increase the inter-electrode capacitance.
Other Limitations
• Gain BW product: Constant
➢ Higher gain can be achieved for narrower BW
• Skin Depth:

1
𝛿= and 𝑅 = 𝜌𝑙
𝜋𝜇𝜎𝑓 𝐴

➢ Conductor losses- more at microwave frequencies


• Radiation Losses:
➢ Electrode pins start radiating at microwave frequencies
• Dielectric Losses:
➢ More at microwave frequencies
Dr. ARVIND KUMAR,
Asst. Professor,
Dept. of Electronics and Communication Engineering,
Visvesvaraya National Institute of Technology, Nagpur,
INDIA

THANK YOU ! [email protected]


[email protected]
HTTPS://SITES.GOOGLE.COM/VIEW/ARVINDK

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