NAME : _____________________

ADM. NO. : __________________

EXPERIMENT- 01
DEVICE CHARACTERISTICS

AIM OF THE EXPERIMENT:

(i) To verify the V-I characteristics of SCR, MOSFET

(ii) To determine the latching current (I L), holding current (I H) and forward-break over voltage
of SCR.
(iii) To determine the trans-conductance (G M =ΔI C/ΔV CE) and drain-source resistance
(RDS=ΔV CE/ΔI C).
(iv) Plot the V-I characteristics of SCR, MOSFET from the data obtained from experiment.
(v) To observe the oscilloscopic view (x-y axis) of SCR characteristics
(vi) To observe turn on and turn off transient of MOSFET

APPARATUS REQUIRED:

Sl No Name of the Specification Model No / Serial no of Maker’s Quantity

Instrument the Instrument Name

CIRCUIT DIAGRAM:

Power Electronics Lab., IIT ISM Dhanbad,pg.1

 NAME : _____________________
ADM. NO. : __________________

Fig.1 Experimental setup for MOSFET and SCR characteristics testing

Power Electronics Lab., IIT ISM Dhanbad,pg.2

 NAME : _____________________
ADM. NO. : __________________

EXPERIMENTAL SETUP:

Fig. 2 Experimental setup for switching characteristics of MOSFET and oscilloscope view of
Thyristor

Power Electronics Lab., IIT ISM Dhanbad,pg.3

 NAME : _____________________
ADM. NO. : __________________

THEORY:
MOSFET: The MOSFET, like the BJT is a three terminal device where the voltage on the gate
terminal control the flow of current between the output terminals, source and drain. The output
characteristic of a MOSFET is plot between drain current I D as a function of drain-source
voltage (V DS) with the gate-source voltage V GS as a parameter.

Fig. MOSFET characteristic Fig. MOSFET

With gate-source voltage V GS below the threshold voltage V GS(TH) the MOSFET operates in the
cut-off mode. When V GS is increased beyond V GS(TH) drain current starts flowing. For small
values of V DS (V DS < (V GS – VGS(TH)) iD is almost proportional to V DS. This mode is called
“Ohmic mode” of operation.
Procedure:
Output Characteristics
(i) Connect voltmeter across gate-source and drain-source terminal, short gate ammeter
terminal, connect ammeter in series of drain terminal as shown by the dotted terminal
on the trainer kit.
(ii) Keep the gate-source voltage V GS to specific voltage by varying POT1. Gradually vary
the drain source voltage V DS by varying POT2 till MOSFET get turn on and note the
voltmeter reading V DS and ammeter drain reading I D.
(iii)Further increase the V DS and note I D.
(iv) For different values of V GS note V DS and I D.
Transfer characteristics
(i) Connect voltmeter across gate-source and drain-source terminal, short gate ammeter
terminal, connect ammeter in series of drain terminal as shown by the dotted terminal
on the trainer kit.

Power Electronics Lab., IIT ISM Dhanbad,pg.4

 NAME : _____________________
ADM. NO. : __________________

(ii) Keep the drain-source voltage V DS to specific voltage by varying POT2. Gradually vary
the gate source voltage V GS by varying POT1 till MOSFET get turn on and note the
voltmeter reading V GS and ammeter drain reading I D.
(iii)Further increase the V GS and note I D.
(iv) For different values of V DS note V GS and I D.
Observation
(i) Output characteristics
V GS VDS ID GM=ΔID/ΔVDS RDS=ΔV DS/ΔID

(ii) Transfer characteristics

VDS V GS ID

Threshold Voltage=………………
Graph
1. For calculating the values of G M, RDS plot the graph of V DS Vs I D and from the slop of
the characteristic curve determines the G M and RDS. Also note the pinch-off voltage
from the graph.
2. Plot the graph of V GS Vs I D. Also note the gate-source threshold voltage VGST from
the graph.
Result and discussion:
Conclusion:

Power Electronics Lab., IIT ISM Dhanbad,pg.5

 NAME : _____________________
ADM. NO. : __________________

SCR: With ig=0, V AK has to increase up to forward break over voltage V BRF before significant
anode current starts flowing. When voltage take over V BRF the voltage across the SCR drops
to V H.

Fig. SCR characteristics Fig. SCR

The magnitude of gate current has a very strong effect on the value of the break over voltage.
After Turn ON the SCR is no more affected by gate current.
Procedure
1. Connect voltmeter across anode-cathode terminal, ammeter in series with gate supply
and anode supply as shown by the dotted terminal on the trainer kit.
2. Vary the POT3 and set the gate current I G.
3. Now gradually increase the anode-cathode voltage VAK by varying the POT4 till the
SCR get turned on, note down the ammeter current I A, anode-cathode voltage V AK
reading. Also find break-over voltage V BR.
4. For different values of gate current note the values of V AK, I A and tabulate them.
5. For measuring latching current, put both POT3 and POT4 in minimum condition and
switch ON the switch. Increase anode cathode voltage V AK slightly, and apply gate
voltage. Some anode current will flow. If this current is less then latching current
removing gate voltage will make this anode current zero.
6. Apply more V AK and apply gate and remove gate and check whether SCR is latched or
not. Increase V AK further in small steps, at some value of anode current after removing
of gate voltage also the SCR will remain in on state; this minimum value of anode
current is the latching current of the SCR.
7. For measuring holding current, apply maximum V AK and apply gate voltage. High value
of anode current which is more than latching current will flow. Remove gate voltage,
as the SCR is latched anode current will continue to flow.
8. Now reduce the anode cathode voltage V AK gradually, at some stage the anode current
will suddenly reach zero value. The current at this stage is the holding current I H.
Observation
IG V AK IA

Power Electronics Lab., IIT ISM Dhanbad,pg.6

 NAME : _____________________
ADM. NO. : __________________

Latching Current I L=…………………. Holding Current I H=………………….

Gate Current I G=……………………. Breakover Voltage V BRO=…………….
Graph: Draw the V-I characteristic of SCR i.e. V AK Vs I A graph.
Result and discussion:
Conclusion:

Observation of SCR V-I characteristics on oscilloscope

Procedure:
(i) Connect SCR anode, cathode and gate from power section to oscilloscope view section.
(ii) Connect the oscilloscope CH 1 probe across the ANODE and CATHODE which
indicate the SCR voltage on X-axis.
(iii)Connect the oscilloscope CH 2 probe across current sensing resistor (i.e. cathode and
supply common point), which indicate the SCR current on Y-axis.
(iv) Put oscilloscope in X-Y mode to plot SCR voltage and current.
(v) Vary the POT5 to set different gate current values or to trigger SCR at different instance
and observe the X-Y plot.
Observation of MOSFET switching characteristics on oscilloscope
Procedure:
(i) Connect MOSFET between G-D-S terminal and short dotted terminal in series with
load. Connect oscilloscope across D-S terminal of MOSFET.
(ii) Switch on the circuit and observe switching waveform across the drain-source terminal
of MOSFET.
(iii) Now connect the stray inductance L as stray inductor in series with load and MOSFET
and observe switching waveform across the drain-source terminal of MOSFET. Note
the spike coming in switching waveform because of inductance.
(iv) Now connect the Snubber circuit across the MOSFET. Observe the reduction in voltage
spike across the drain-source terminal voltage of MOSFET.
Result and discussion:
Conclusion:
Questions:
1) What do you mean by latching current and holding current?
2) What do you mean by break over voltage?

Power Electronics Lab., IIT ISM Dhanbad,pg.7

 NAME : _____________________
ADM. NO. : __________________

3) What would happen if gate is made positive with respect to cathode during the reverse
blocking of thyristor?
4) Discuss the output and transfer characteristics of power MOSFET.
5) What are the parameters on which turn on and turn off losses for a MOSFET depends?
References:
(i) https://www.alldatasheet.com/datasheet-pdf/pdf/3045/MOTOROLA/IRF840.html
(ii) https://www.alldatasheet.com/datasheet-
pdf/pdf/25111/STMICROELECTRONICS/TYN612.html
(iii) M D Singh & K B Khanchandani. Power Electronics: McGraw Hill Education (India)
Private limited
Items to bring in lab:
(i) A4 size blanks sheets
(ii) Graph papers

Power Electronics Lab., IIT ISM Dhanbad,pg.8