ELECTRONICS & COMMUNICATION ENGINEERING

MICROWAVE DEVICES AND CATEGORY L T P CREDIT

ECT446
CIRCUITS PEC 2 1 0 3

Preamble: This course aims to understand with active and passive microwave semiconductor
devices, components, microwave sources and amplifiers used in microwave communication systems,
analysis of microwave networks and microwave integrated circuits.

Prerequisite: ECT 401 MICROWAVE AND ANTENNAS

Course Outcomes: After the completion of the course the student will be able to:

CO1 Understand the limitation of conventional solid state devices at Microwave, Gunn –
K2 effect diodes, Microwave generation and amplification, IMPATT and TRAPATT diodes
CO2 Design of Bipolar transistors, MESFET, Microwave amplifiers and
K3 oscillators
CO3
Analysis of Microwave Network Analysis and the corresponding signal flow graphs
K3
CO4 Design of Microwave filters, Filter design by image parameter method, Filter
K3 transformation and implementation
CO5 Understand different MICs, Distributed and lumped elements of integrated circuits, Diode
K2 control devices.

Mapping of course outcomes with program outcomes:

PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12
CO1 3 3 2 2
CO2 3 3 3 2
CO3 3 3 3 2
CO4 3 3 3 2
CO5 3 3 2 2

Assessment Pattern:
Continuous Assessment Tests
Bloom’s Category End Semester Examination
1 2
Remember
Understand 20 20 40
Apply 30 30 60
Analyse
Evaluate
Create

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Mark distribution:
Total Marks CIE ESE ESE Duration
150 50 100 3Hrs

Continuous Internal Evaluation Pattern:

Attendance : 10 marks
Continuous Assessment Test (2 numbers) : 25 marks
Assignment/Quiz/Course project : 15 marks

End Semester Examination Pattern

Maximum Marks: 100 Time: 3 hours

There will be two parts; Part A and Part B. Part A contain 10 questions with 2 questions from
each module, having 3 marks for each question. Students should answer all questions. Part B
contains 2 questions from each module of which student should answer any one. Each question can
have maximum 2 subdivisions and carry 14 marks.

Course Level Assessment Questions.

Course Outcome 1 (CO1):

1. Explain Ridley – Watkins-Hilsum theory.
2. Explain in detail Various modes of operation of Gunn Oscillators.

Course Outcome 2 (CO2):

1. Explain GaAs MESFET with structure and principle of operation? Why GaAs MESFETs are
preferred over Si MESFETs.
2. Derive the expression for available power gain of microwave amplifier.

Course Outcome 3 (CO3):

1. Explain the importance of impedance matching or tuning.
2. Evaluate the ABCD matrix coefficient computation of a transmission line section with
characteristic impedance ‘Zo’ propagation constant ‘β’ and length ‘l’.

Course Outcome 4 (CO4):

1. Design a low-pass composite filter with a cut-off frequency of 2MHz and impedances of 75Ω.
Place the infinite attenuation pole at 2.05MHz.
2. With neat circuit explain the Design procedure of an m-derived LPF section and plot the
frequency response.

Course Outcome 5 (CO5):

1. Explain the configuration of Planar capacitor film
2. Discuss Strip line in planar transmission and also find the Quality factor.

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3. Explain the frequency characteristics of single layer square inductor.

Syllabus

Module Course contents Hours

Introduction, Characteristic, features of microwaves, Limitation of conventional
solid state devices at Microwave. Gunn diodes – Gunn effect, Ridley – Watkins-
I Hilsum theory, Modes of operation, Limited space – Charge accumulation (LSA) 6
mode of Gunn diode. Microwave generation and amplification. Structure,
Operation, Power output and efficiency of IMPATT and TRAPATT diodes
Bipolar transistors – biasing, FET – biasing, MESFET – Structure, Operation.
Microwave amplifiers and oscillators – Amplifiers – Gain and stability, Single
II 8
stage transistor amplifier design. Oscillator design – One port negative resistance
oscillators.
Microwave Network Analysis – Equivalent voltages and currents, Impedance and
Admittance matrices, Scattering matrix, The transmission matrix.
III Signal flow graphs. Impedance matching and tuning – Matching with lumped 6
elements, Single stub tuning, Double stub tuning. Quarter wave transformer,
Theory of small reflections.
Microwave filters – Periodic structures – Analysis of infinite periodic structures
and terminated periodic structures
IV 7
Filter design by image parameter method – Constant k, m-derived and composite.
Filter design by insertion loss method. Filter transformation and implementation.
Introduction to MICSs:-Technology of hybrid MICs, monolithic MICs.
Comparison of both MICs. Planar transmission lines such as strip line, microstrip
line, and slot line. Distributed and lumped elements of integrated circuits -
V 8
capacitors, inductors, resistors, terminations, attenuators, resonators and
discontinuities.Diode control devices – switches, attenuators, limiters. Diode
phase shifter. Circulators and isolators.

Text Books:

1. David M. Pozar, Microwave Engineering, 4/e, Wiley India, 2012.

2. Robert E. Collin, Foundation of Microwave Engineering, 2/e, Wiley India, 2012.
3. Samuel Y. Liao, Microwave Devices and Circuits, 3/e, Pearson Education, 2003.

References:
1. Bharathi Bhat and Shiban K. Koul: Stripline-like Transmission Lines for MIC, New Age
International (P) Ltd, 1989.
2. I. Kneppo, J. Fabian, et al., Microwave Integrated Circuits, BSP, India, 2006.
3. Leo Maloratsky, Passive RF and Microwave Integrated Circuits, Elsevier, 2006.

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Course Contents and Lecture Schedule.

No Topic No.of.
Lectures
Module I
1.1 Introduction, Characteristic, features of microwaves, Limitation of conventional solid
2
state devices at Microwave
1.2 Gunn – effect diodes – Gunn effect, Ridley – Watkins-Hilsum theory, Modes of
2
operation, Limited space – Charge accumulation (LSA) mode of Gunn diode.
1.3 Microwave generation and amplification. Structure, Operation, Power output and
2
efficiency of IMPATT and TRAPATT diodes
Module II
2.1 Bipolar transistors – biasing, FET – biasing, MESFET – Structure, Operation. 3
2.2 Microwave amplifiers and oscillators – Amplifiers – Gain and stability, Single stage 3
transistor amplifier design.
2.3 Oscillator design – One port negative resistance oscillators. 2
Module III
3.1 Microwave Network Analysis – Equivalent voltages and currents, Impedance and
Admittance matrices, Scattering matrix, The transmission matrix 2

3.2 Signal flow graphs. Impedance matching and tuning – Matching with lumped
2
elements, Single stub tuning, Double stub tuning.
3.3 Quarter wave transformer, Theory of small reflections. 2
Module IV
4.1 Microwave filters, Periodic structures, Analysis of periodic structures
2
4.2 Filter design by image parameter method – Constant k, m-derived and composite. 3
4.3 Filter design by insertion loss method. Filter transformation and implementation. 2
Module V
5.1 Introduction to MICSs:-Technology of hybrid MICs, monolithic MICs. Comparison
2
of both MICs.
5.2 Planar transmission lines such as stripline, microstrip line, and slotline. 2
5.3 Distributed and lumped elements of integrated circuits - capacitors, inductors,
2
resistors, terminations, attenuators, resonators and discontinuities.
5.4 Diode control devices – switches, attenuators, limiters. Diode phase shifter.
2
Circulators and isolators.

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Model Question Paper

APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY

EIGHTH EMESTER B. TECH DEGREE EXAMINATION
Course Code: ECT446
Course Name: MICROWAVE DEVICES AND CIRCUITS

Max. Marks:100 Duration: 3 Hours

PART A
(Answer All Questions)
1 With a graph explain the characteristics of Gunn diode. (3)
2 Explain the limitations of conventional solid state devices at microwaves (3)
3 Design a one port negative resistance oscillator (3)
4 Discuss different biasing techniques used for microwave bipolar transistor. (3)
5 Derive expressions for S parameters in terms of Z parameters for a 2-port network. (3)
6 Explain the principle of double stub matching. (3)
7 Discuss the significance of k-β diagram in filter characteristics. (3)
8 List the Kuroda’s identity. (3)
The strip line designed with a dielectric material with b = h = 3.1 mm, w = 2.5 mm
9 (3)
Find characteristic impedance Zo.
ε r = 10.5

10 Explain the configuration of distributed ferrite circulators. (3)

PART B
(Answer one question from each module. Each question carries 14 marks)

MODULE I
What does IMPATT diode stand for and with neat diagram mention construction and (10)
11 a)
working of it and derive power and η of the same.
b) Explain modes of operation of Gunn diode. (4)
OR

12 a) What are TRAPATT diodes? Explain elaborately their principle of operation with (10)
neat diagram.
b) An IMPATT diode has carrier drift velocity Vd = 3 x 107 cm/s, Drift region length L (4)
= 6µm, Maximum operating voltage V0max = 100V, Maximum operating current
I0max = 200mA, Efficiency η = 15%, Breakdown voltage Vbd = 90V. Find
maximum CW output power in watts and the resonant frequency in gigahertz.

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MODULE II

13 a) Design a single stage Transistor Amplifier used in microwave circuits. (10)

b) Why are GaAs MESFET’s preferred to Si MESFET’s (4)
OR

14 a) Discuss in detail the physical structure of MESFET and explain its principle of (10)
operation.
b) Discuss briefly the Stability of Amplifier with necessary conditions. (4)

MODULE III

15 a) For a microwave circuit, discuss the equivalent voltage and currents. (6)

b) Explain working of Double Stub tuning and Quarter Wave Transformer. (8)
OR

16 a) Explain in detail the concept of matching with lumped elements. (6)

b) Discuss in detail about impedance and frequency scaling. (8)

MODULE IV
17 a) Explain the steps in designing a composite filter. Also write down the equations and (8)
draw the circuit for designing a composite low pass filter.
b) Design a low pass filter for fabrication using microstrip line. The specifications are (6)
cut-off frequency of 4 GHz, third order, impedance of 50 Ω and a 3 dB equi-ripple
characteristics. The normalized low pass proto-type values are g1 = 3.3487 = L1 g3,=
3.3487 = L3 , g2 = 0.7117 = C2 , g4 = 1.000 = RL.
OR
18 a) Design a low pass constant K filter using image parameter method. (7)

b) What are the steps required to transfer a LPF from HPF .explain. (7)

MODULE V

19 a) Explain in detail about thick film and thin film technology? (9)
b) Discuss Microwave resonators with neat diagram (5)

OR
(8)
20 a) Classify Switches based on Characteristics
b) Discuss briefly about slot line. (6)

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