IRFR9024
IRFR9024
IRFR9024
www.vishay.com
Vishay Siliconix
Power MOSFET
S FEATURES
• Dynamic dV/dt rating
DPAK IPAK
(TO-252) (TO-251) • Repetitive avalanche rated
D G • Surface-mount (IRFR9024, SiHFR9024)
D
• Straight lead (IRFU9024, SiHFU9024)
Available
• Available in tape and reel
S • P-channel
G D S
G
D • Fast switching
P-Channel MOSFET • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY DESCRIPTION
VDS (V) -60
Third generation power MOSFETs from Vishay provide the
RDS(on) (Ω) VGS = -10 V 0.28 designer with the best combination of fast switching,
Qg (Max.) (nC) 19 ruggedized device design, low on-resistance and
Qgs (nC) 5.4 cost-effectiveness.
Qgd (nC) 11 The DPAK is designed for surface mounting using vapor
Configuration Single
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface-mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free SiHFR9024-GE3 SiHFR9024TR-GE3 a SiHFR9024TRL-GE3 a SiHFR9024TRR-GE3 a SiHFU9024-GE3
and halogen-free IRFR9024PbF-BE3 IRFR9024TRPbF-BE3 IRFR9024TRLPbF-BE3 -
Lead (Pb)-free IRFR9024PbF IRFR9024TRPbF a IRFR9024TRLPbF a - IRFU9024PbF
Note
a. See device orientation
Fig. 2 -Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
D.U.T.
Rg
+
- VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
td(on) tr td(off) tf
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
L IAS
VDS
Vary tp to obtain
required IAS
VDS
Rg D.U.T.
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω
VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF
QGS QGD -
D.U.T. + VDS
VG
VGS
- 3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- - +
Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -
Note
• Compliment N-Channel of D.U.T. for driver
VGS = - 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91278.
L3
D1
D
H
E1
L4
L5
L
gage plane height (0.5 mm)
b b2 C
e
A1
e1
MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10 -
E 6.35 6.73
E1 4.32 -
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
Note
• Dimension L3 is for reference only
e
E A
b3
E1
e c2 E1/2
θ
θ
D1
L3
D
H
L6
L5
L4
2x b2
3x b DETAIL "B"
2x e (b)
0.25 C A B
c
(3°) (3°)
c1
H
C b1
GAUGE
PLANE SEATING DETAIL "B"
C C
L PLANE
θ
L2
A1
(L1)
MILLIMETERS MILLIMETERS
DIM. MIN. MAX. DIM. MIN. MAX.
A 2.18 2.39 L 1.50 1.78
A1 - 0.13 L1 2.74 ref.
b 0.65 0.89 L2 0.51 BSC
b1 0.64 0.79 L3 0.89 1.27
b2 0.76 1.13 L4 - 1.02
b3 4.95 5.46 L5 1.14 1.49
c 0.46 0.61 L6 0.65 0.85
c1 0.41 0.56 0° 10°
c2 0.46 0.60 1 0° 15°
D 5.97 6.22 2 25° 35°
D1 5.21 - Notes
E 6.35 6.73 • Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
E1 4.32 -
• Heat sink side flash is max. 0.8 mm
e 2.29 BSC • Radius on terminal is optional
H 9.94 10.34
D
3 Seating
5 plane
L1 L3 C C
(Datum A)
L
B B
A
3 x b2 A1
c
3xb
View A - A 0.010 0.25 M C A B
2xe
Base
5 metal
Plating
b1, b3
Lead tip
(c) c1 5
(b, b2)
Section B - B and C - C
θ1
D2
Ø 1.00
D1
x 0.10 deep
θ1
L4
C C
L1
L3
B B
L
b2
A1
b b1, b3
c
e
c
θ2
c1
Third angle b, b2
projection
Section “B-B” and “C-C”
0.224
(5.690)
(6.180)
0.243
(10.668)
0.420
(2.202)
0.087
(2.286)
0.090
0.180 0.055
(4.572) (1.397)
APPLICATION NOTE
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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