IRFR9024

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IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

www.vishay.com
Vishay Siliconix
Power MOSFET
S FEATURES
• Dynamic dV/dt rating
DPAK IPAK
(TO-252) (TO-251) • Repetitive avalanche rated
D G • Surface-mount (IRFR9024, SiHFR9024)
D
• Straight lead (IRFU9024, SiHFU9024)
Available
• Available in tape and reel
S • P-channel
G D S
G
D • Fast switching
P-Channel MOSFET • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY DESCRIPTION
VDS (V) -60
Third generation power MOSFETs from Vishay provide the
RDS(on) (Ω) VGS = -10 V 0.28 designer with the best combination of fast switching,
Qg (Max.) (nC) 19 ruggedized device design, low on-resistance and
Qgs (nC) 5.4 cost-effectiveness.
Qgd (nC) 11 The DPAK is designed for surface mounting using vapor
Configuration Single
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface-mount applications.

ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free SiHFR9024-GE3 SiHFR9024TR-GE3 a SiHFR9024TRL-GE3 a SiHFR9024TRR-GE3 a SiHFU9024-GE3
and halogen-free IRFR9024PbF-BE3 IRFR9024TRPbF-BE3 IRFR9024TRLPbF-BE3 -
Lead (Pb)-free IRFR9024PbF IRFR9024TRPbF a IRFR9024TRLPbF a - IRFU9024PbF
Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)


PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -60
V
Gate-source voltage VGS ± 20
TC = 25 °C -8.8
Continuous drain current VGS at -10 V ID
TC = 100 °C -5.6 A
Pulsed drain current a IDM -35
Linear derating factor 0.33
W/°C
Linear derating factor (PCB mount) e 0.020
Single pulse avalanche energy b EAS 300 mJ
Repetitive avalanche current a IAR -8.8 A
Repetitive avalanche energy a EAR 5.0 mJ
Maximum power dissipation TC = 25 °C 42
PD W
Maximum power dissipation (PCB mount) e TA = 25 °C 2.5
Peak diode recovery dV/dt c dV/dt -4.5 V/ns
Operating junction and storage temperature range TJ, Tstg -55 to +150
°C
Soldering recommendations (peak temperature) d For 10 s 260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = - 25 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 Ω, IAS = - 8.8 A (see fig. 12)
c. ISD ≤ - 11 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0771-Rev. E, 19-Jul-2021 1 Document Number: 91278


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix

THERMAL RESISTANCE RATINGS


PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - - 110
Maximum junction-to-ambient
RthJA - - 50 °C/W
(PCB mount) a
Maximum junction-to-case (drain) RthJC - - 3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA - 60 - - V
VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - - 0.063 - V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA - 2.0 - - 4.0 V
Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = - 60 V, VGS = 0 V - - - 100
Zero gate voltage drain current IDSS μA
VDS = - 48 V, VGS = 0 V, TJ = 125 °C - - - 500
Drain-source on-state resistance RDS(on) VGS = - 10 V ID = - 5.3 Ab - - 0.28 Ω
Forward transconductance gfs VDS = - 25 V, ID = - 5.3 A 2.9 - - S
Dynamic
Input capacitance Ciss - 570 -
VGS = 0 V,
Output capacitance Coss VDS = - 25 V, - 360 - pF
f = 1.0 MHz
Reverse transfer capacitance Crss - 65 -
Total gate charge Qg - - 19
ID = - 11 A, VDS = - 48 V,
Gate-source charge Qgs VGS = - 10 V - - 5.4 nC
see fig. 6 and 13b
Gate-drain charge Qgd - - 11
Turn-on delay time td(on) - 13 -
Rise time tr VDD = - 30 V, ID = - 11 A, - 68 -
ns
Turn-off delay time td(off) Rg = 18 Ω, RD = 2.5 Ω, see fig. 10b - 15 -
Fall time tf - 29 -
Between lead, D
Internal drain inductance LD - 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal source inductance LS die contact - 7.5 -
S

Drain-Source Body Diode Characteristics

Continuous source-drain diode current IS MOSFET symbol D


- - - 8.8
showing the
integral reverse G
A
Pulsed diode forward current a ISM p - n junction diode S - - - 35

Body diode voltage VSD TJ = 25 °C, IS = - 8.8 A, VGS = 0 Vb - - - 6.3 V


Body diode reverse recovery time trr - 100 200 ns
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb
Body diode reverse recovery charge Qrr - 0.32 0.64 μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

S21-0771-Rev. E, 19-Jul-2021 2 Document Number: 91278


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

Fig. 2 -Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

S21-0771-Rev. E, 19-Jul-2021 3 Document Number: 91278


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

S21-0771-Rev. E, 19-Jul-2021 4 Document Number: 91278


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix

RD
VDS

VGS
D.U.T.
Rg
+
- VDD

- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

td(on) tr td(off) tf
VGS
10 %

90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S21-0771-Rev. E, 19-Jul-2021 5 Document Number: 91278


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix

L IAS
VDS
Vary tp to obtain
required IAS
VDS
Rg D.U.T.
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω
VDS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF

QGS QGD -

D.U.T. + VDS

VG
VGS

- 3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

S21-0771-Rev. E, 19-Jul-2021 6 Document Number: 91278


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit


D.U.T. +
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- - +

Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -

Note
• Compliment N-Channel of D.U.T. for driver

Driver gate drive


Period P.W.
D=
P.W. Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current

ISD
Ripple ≤ 5 %

Note
a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91278.

S21-0771-Rev. E, 19-Jul-2021 7 Document Number: 91278


For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E A
C2
b3

L3

D1
D

H
E1
L4
L5

L
gage plane height (0.5 mm)
b b2 C
e
A1
e1

MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10 -
E 6.35 6.73
E1 4.32 -
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
Note
• Dimension L3 is for reference only

Revision: 03-Oct-2022 1 Document Number: 71197


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = N

e
E A
b3
E1
e c2 E1/2

θ
θ

D1
L3
D

H
L6

L5
L4

2x b2
3x b DETAIL "B"
2x e (b)
0.25 C A B

c
(3°) (3°)

c1
H
C b1
GAUGE
PLANE SEATING DETAIL "B"
C C
L PLANE
θ
L2

A1
(L1)

MILLIMETERS MILLIMETERS
DIM. MIN. MAX. DIM. MIN. MAX.
A 2.18 2.39 L 1.50 1.78
A1 - 0.13 L1 2.74 ref.
b 0.65 0.89 L2 0.51 BSC
b1 0.64 0.79 L3 0.89 1.27
b2 0.76 1.13 L4 - 1.02
b3 4.95 5.46 L5 1.14 1.49
c 0.46 0.61 L6 0.65 0.85
c1 0.41 0.56  0° 10°
c2 0.46 0.60 1 0° 15°
D 5.97 6.22 2 25° 35°
D1 5.21 - Notes
E 6.35 6.73 • Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
E1 4.32 -
• Heat sink side flash is max. 0.8 mm
e 2.29 BSC • Radius on terminal is optional
H 9.94 10.34





ECN: E22-0399-Rev. R, 03-Oct-2022


DWG: 5347

Revision: 03-Oct-2022 2 Document Number: 71197


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
Case Outline for TO-251AA (High Voltage)
OPTION 1:
4 3 A
E1 Thermal PAD E A
4
b4 0.010 0.25 M C A B c2
L2 4 A
θ2 θ1
D1 4
B
C

D
3 Seating
5 plane

L1 L3 C C
(Datum A)

L
B B

A
3 x b2 A1
c
3xb
View A - A 0.010 0.25 M C A B
2xe

Base
5 metal
Plating
b1, b3
Lead tip
(c) c1 5

(b, b2)
Section B - B and C - C

MILLIMETERS INCHES MILLIMETERS INCHES


DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -
A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265
b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -
b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC
b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380
b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090
b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050
c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060
c1 0.41 0.56 0.016 0.022 1 0' 15' 0' 15'
c2 0.46 0.86 0.018 0.034 2 25' 35' 25' 35'
D 5.97 6.22 0.235 0.245
ECN: E21-0682-Rev. C, 27-Dec-2021
DWG: 5968
Notes
• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension are shown in inches and millimeters
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC® outline TO-251AA

Revision: 27-Dec-2021 1 Document Number: 91362


For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
OPTION 2: FACILITY CODE = N
E
L2 b4 A
c2 E1
CL

θ1

D2
Ø 1.00

D1
x 0.10 deep

θ1
L4

C C
L1
L3

B B
L

b2
A1
b b1, b3
c
e
c

θ2

c1
Third angle b, b2
projection
Section “B-B” and “C-C”

DIM. MIN. NOM. MAX. DIM. MIN. NOM. MAX.


A 2.180 2.285 2.390 D2 5.380 - -
A1 0.890 1.015 1.140 E 6.350 6.540 6.730
b 0.640 0.765 0.890 E1 4.32 - -
b1 0.640 0.715 0.790 e 2.29 BSC
b2 0.760 0.950 1.140 L 8.890 9.270 9.650
b3 0.760 0.900 1.040 L1 1.910 2.100 2.290
b4 4.950 5.205 5.460 L2 0.890 1.080 1.270
c 0.460 - 0.610 L3 1.140 1.330 1.520
c1 0.410 - 0.560 L4 1.300 1.400 1.500
c2 0.460 - 0.610 1 0° 7.5° 15°
D 5.970 6.095 6.220 2 4° - -
D1 4.300 - -
ECN: E21-0682-Rev. C, 27-Dec-2021
DWG: 5968
Notes
• Dimensioning and tolerancing per ASME Y14.5M-1994
• All dimension are in millimeters, angles are in degrees
• Heat sink side flash is max. 0.8 mm

Revision: 27-Dec-2021 2 Document Number: 91362


For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224
(5.690)

(6.180)
0.243
(10.668)
0.420

(2.202)
0.087
(2.286)
0.090

0.180 0.055
(4.572) (1.397)

Recommended Minimum Pads


Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72594 www.vishay.com


Revision: 21-Jan-08 3
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Revision: 01-Jan-2023 1 Document Number: 91000

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