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EEE1302 - Lab No 01

The document describes a lab experiment to study the characteristics of a semiconductor diode. The objectives, apparatus, theory, procedure, data collection as tables and graphs, and results are presented. The forward bias characteristics are nonlinear, with current increasing slowly at first and then suddenly rising at the threshold voltage. In reverse bias, current is restricted until the breakdown voltage.

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77 views7 pages

EEE1302 - Lab No 01

The document describes a lab experiment to study the characteristics of a semiconductor diode. The objectives, apparatus, theory, procedure, data collection as tables and graphs, and results are presented. The forward bias characteristics are nonlinear, with current increasing slowly at first and then suddenly rising at the threshold voltage. In reverse bias, current is restricted until the breakdown voltage.

Uploaded by

tithynusrat812
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Lab Report 1

Course Code: EEE 1302


Course Title: Electronic Circuits I Lab

Experiment No: 01
Experiment Name: Study of the Semiconductor Diode Characteristics.

Submitted By:
Name: Nusrat Jannat Tithy
ID: 223014116
Section: 04

Submitted to:
Name: Atik Jawas
Senior Lecturer,
Dept. of EEE.
University of Liberal Arts Bangladesh (ULAB).

Date of Submission: 26/01/2024


Experiment Name: Study of the Semiconductor Diode Characteristics.

Objectives:
To measure the corresponding voltage and current of diode in Forward and Reverse Bias.

Apparatus:
1. DC Power Supply (0-20V)
2. Breadbord-1 piece
3. Diode – 1 piece
4. Resistor (1 kΩ)-1 piece
5. Voltmeter (0-20V)
6. Ammeter
7. Wires as required

Theory:
A diode is a two-terminal electronic component that conducts electricity primarily in one
direction. It has high resistance on one end and low resistance on the other end. The diode is
made up of a junction of n-type and p-type semiconductor material. An ideal diode has two
regions: a conduction region of zero resistance and a non-conduction region of infinite
resistance.
In forward bias operation, the silicon diode will not conduct significant current until the voltage
reaches the barrier potential about (0.3 - 0.7)V, called cut-in or knee voltage, based on its
material. After the point of cut-in voltage (Knee voltage), a slight change in voltage causes a
significant increase in current. In forward biasing the diode would ac like short circuit.
In reverse bias the flow of current is restricted. If the voltage across a diode is negative, no
current can flow, and the ideal diode looks like an open circuit.

Circuit Diagram

Figure no 01: Forward Bias


Figure no 02: Reverse Bias

Procedure
1. Connected the forward bias circuit as shown in Figure. 1 using a diode (dc power power
supply positive side connected to 1 kΩ resistor and also connected to ammeter and Diode –
1N4007 positive side and negative side of diode add to dc power supply negative side).
2. Switched ON the power supply on the board.
3. Increased the DC voltage from zero in steps of (1 volts) up to (6 volts), then in step of (2 volt)
up to (20 volt), and recorded the voltage across the diode and current flowing in the circuit.
4. Tabulated results in a table as shown in table 1.
5. Switched OFF the power supply of the board.
6.. Connected the reverse bias circuit as shown in Fig. 2 using a diode.
7. Increased the DC voltage from zero in steps of (0.2 volts) up to (1 volt), then in steps of (1
volt) up to (6 volts) and for each step recorded the current flowing in the circuit.
8. Finally plotted the values on graph.

Date Collection
Table 1 for Forward Bias
No. . Supplied Voltage (V) Measured Voltage (V) Measured Current (mA)
1 1 0.461 0.46
2 2 0.501 1.55
3 3 0.520 2.52
4 4 0.540 3.58
5 5 0.554 4.57
6 6 0.565 5.54
7 8 0.583 7.55
8 10 0.601 9.73
9 12 0.614 11.75
10 14 0.627 13.87
11 16 0.640 16.06
12 18 0.649 18.19
13 20 0.660 20.70
Table no: 01
Table 2 for Reverse Bias
No. Supplied Voltage (V) Measured Voltage (V) Measured Current (mA)

1 0.2 0.15 0.00


2 0.4 0.38 0.00
3 0.6 0.53 0.00
4 0.8 0.74 0.1
5 1 0.95 0.1
6 2 1.98 0.2
7 3 2.94 0.3
8 4 3.98 0.4
Table no: 02

Graph
V vs. I of I-V Characteristic graph of forward bias and reverse bias

Figure no 03: Forward bias graph


Figure no 04: Reverse bias

Result:

Figure no 5 & 6: Experimental Circuit connection

Discussion
From the Experiment, we can see that the forward characteristics of a diode is nonlinear. The
forward current increases slowly in the beginning and shows a sudden rise at a certain value of
forward voltage. This voltage is known as the threshold voltage or Knee voltage. This is because
the resistance is very low in forward biased condition. The current in the reverse bias is due to
the flow of minority carriers. The reverse current shows a sudden increase at a particular region.
The corresponding voltage is known as the reverse breakdown voltage.

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