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Assignment 3

The document contains 8 questions about calculating parameters for p-n junctions and Schottky diodes including built-in potential, space charge width, electric field, depletion capacitance, minority carrier concentrations, ideal reverse saturation current density, generation current density, and space charge width.

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53 views

Assignment 3

The document contains 8 questions about calculating parameters for p-n junctions and Schottky diodes including built-in potential, space charge width, electric field, depletion capacitance, minority carrier concentrations, ideal reverse saturation current density, generation current density, and space charge width.

Uploaded by

vatsaljain0709
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ELL211 Assignment-3

Dept. of EE Dated: 01-04-2024


If silicon is the material, you should consider intrinsic carrier concentration to be 1.5E+10 cm-3 at
room temperature (T=300K) unless stated otherwise. You can’t consider data/parameters from one
question to use in the other unless stated explicitly.

1. Consider a silicon p-n junction at T=300 K with doping concentrations of N a =1E+17 cm-3 and
N d = 1E+15 cm-3. Calculate the built-in potential barrier in this p-n junction.

2. Consider a silicon p-n junction at T = 300 K with doping concentrations of N a = 1E+14 cm-3 and
N d = 1E+15 cm-3. Calculate the space charge width and electric field in a p-n junction for zero
bias and 1.0 V reverse bias. Calculate the depletion (or junction) capacitance for this 1.0 V
reverse bias considering the area of the junction A=1E-5 cm2.

3. Calculate the minority carrier concentrations at the edge of the space charge regions in a
forward-biased p-n junction. Consider a silicon p-n junction at T= 300 K. Assume the doping
concentration in the n region is N d =2E+16 cm-3 and the doping concentration in the p region
is N a = 5E+15 cm-3, and assume that a forward bias of 0.60 V is applied to the p-n junction.

4. Determine the ideal reverse-saturation current density in a silicon p-n junction at T= 300 K.
Consider the following parameters in a silicon p-n junction: N a = N d =5E+15 cm-3, ni =1.5E+10
cm-3, Dn =25 cm2 /s, D p = 10 cm2/s,  p 0 =  n 0 =5E-7 s,  r =11.7.

5. Determine the relative magnitudes of the ideal reverse-saturation current density and the
generation current density in a reverse-biased p-n junction. Consider a silicon p-n junction at
T= 300 K with parameters Dn =25 cm2/s, D p =10 cm2 /s, N a = N d = 1E+16 cm-3, and  p 0 =  n 0

= 5E-7 s. Assume the diode is reverse biased at VR = 5 V.

6. Calculate the ideal reverse-saturation current densities of a Schottky barrier Diode. Consider a
tungsten barrier on silicon with a measured barrier height of eBn =0.67 eV. The effective
Richardson constant is A* =114 A /K 2.cm2. Let T = 300 K. Find the total current in the Schottky
barrier diode when the applied forward biased voltage is V f =0.7V.

7. Calculate the space charge width for a Schottky barrier on a heavily doped semiconductor.
Consider silicon at T =300 K doped at N d =5E+18 cm-3. Assume a Schottky barrier with B 0
=0.67 V. Assume that Vbi ≈ B 0 .
8. A Schottky barrier is formed between a metal having a work function of 4.3 eV and p-type Si
(electron affinity = 4 eV). The acceptor doping in the Si is 1E+17 cm-3. (a) Draw the equilibrium
band diagram, showing a numerical value for eVbi . (b) Draw the band diagram with 0.3 V
forward bias. Repeat for 2 V reverse bias.

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