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Static Characteristics of IGBT

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19 views4 pages

Static Characteristics of IGBT

Uploaded by

Craig Peri
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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STATIC CHARACTERISTICS OF IGBT

Fig.2.22: IGBT bias circuit

Static V-I characteristics ( I C versus VCE )


Same as in BJT except control is by VGE . Therefore IGBT is a voltage controlled
device.
Transfer Characteristics ( I C versus VGE )

Identical to that of MOSFET. When VGE VGET , IGBT is in off-state.


Applications
Widely used in medium power applications such as DC and AC motor drives, UPS systems,
Power supplies for solenoids, relays and contractors.
Though IGBT’s are more expensive than BJT’s, they have lower gate drive requirements,
lower switching losses. The ratings up to 1200V, 500A.

2.8 di dt and dv dt Limitations


Transistors require certain turn-on and turn-off times. Neglecting the delay time t d
and the storage time t s , the typical voltage and current waveforms of a BJT switch is shown
below.

During turn-on, the collector rise and the di dt is

di IL I cs
...(1)
dt tr tr
During turn off, the collector emitter voltage must rise in relation to the fall of the
collector current, and is

dv Vs Vcc
...(2)
dt tf tf

The conditions di dt and dv dt in equation (1) and (2) are set by the transistor
switching characteristics and must be satisfied during turn on and turn off. Protection circuits
are normally required to keep the operating di dt and dv dt within the allowable limits of
transistor. A typical switch with di dt and dv dt protection is shown in figure (a), with
operating wave forms in figure (b). The RC network across the transistor is known as the
snubber circuit or snubber and limits the dv dt . The inductor LS , which limits the di dt , is
sometimes called series snubber.

Let us assume that under steady state conditions the load current I L is freewheeling through
diode Dm , which has negligible reverse reco`very time. When transistor is turned on, the
collector current rises and current of diode Dm falls, because Dm will behave as short
circuited. The equivalent circuit during turn on is shown in figure below

The turn on di dt is
di Vs
...(3)
dt Ls

Equating equations (1) and (3) gives the value of Ls


Vs tr
Ls ...(4)
IL
During turn off, the capacitor Cs will charge by the load current and the equivalent
circuit is shown in figure. The capacitor voltage will appear across the transistor and the
dv dt is
dv IL
...(5)
dt Cs
Equating equation (2) to equation (5) gives the required value of capacitance,
I Lt f
Cs ...(6)
Vs
Once the capacitor is charge to Vs , the freewheeling diode will turn on. Due to the
energy stored in Ls , there will be damped resonant circuit as shown in figure . The RLC
circuit is normally made critically damped to avoid oscillations. For unity critical damping,
R C
1 , and equation yields
0 2 L

Ls
Rs 2
Cs

The capacitor Cs has to discharge through the transistor and the increase the peak
current rating of the transistor. The discharge through the transistor can be avoided by placing
resistor Rs across Cs instead of placing Rs across Ds .
The discharge current is shown in figure below. When choosing the value of Rs , the
discharge time, Rs Cs s should also be considered. A discharge time of one third the

switching period, Ts is usually adequate.


1
3Rs Cs Ts
fs
1
Rs
3 f s Cs

Source : http://elearningatria.files.wordpress.com/2013/10/ece-vii-power-electronics-10ec73-notes.pdf

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