Zhang 2015
Zhang 2015
fully edited. Content may change prior to final publication. Citation information: DOI
10.1109/TPEL.2014.2323075, IEEE Transactions on Power Electronics
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materials of macro-/meso-scale MFCs for relatively good circuit voltage of a MFC is around 0.7 V. The output voltage
electrochemical characteristics and chemical stability. Among decreases as the output current increases. The maximum
them, carbon nanotube (CNT), a nanostructured carbon power of a MFC is 10 µW - 20 µW.
allotrope, is an attractive material due to its high SAV
(Surface Area to Volume) ratio, high conductivity, excellent
electrochemical characteristics, and superb mechanical and
chemical stability [1].
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current path from output to inductor is then blocked by the At the steady state, the average current passing through
CCR to avoid any energy loss from the output to ground inductor should be equal to the current passing through Rload
through the body diode of M1. As a result of these switching plus Ictrl that supplies the control circuit. If we assume Ictrl is
events, Vout increases and maintains at a stable value as the much smaller than the load current average (Iavg) or the
control loop tunes the equivalent frequency of the switchings. efficiency of the converter is high, which results in finite
During the start-up, the control loop of the converter is inaccuracy of calculation at low power level, we have
powered by MFC directly. When the output voltage of the Vout Rload + I ctrl ≈ Vout Rload = I avg = I max (D1 + D2 )N 2
converter is greater than that of the MFC, the control loop is (7)
powered from converter output. Such a supply switching D 2V N Vin Vin N Vin
= 1 in 1 + = 2
1 +
event is automatically managed by the on-chip supply 2 Lf Vout − Vin 8 LTf osc Vout − Vin
switching module. In our design, the maximum inductor current is limited by
the oscillator frequency. The limiting mechanism benefits
from low power (the power to limit the inductor peak current
is mostly dominated by the oscillator, which is typically less
than 0.1 µW) and involves no additional current sensing loop
so that no design effort is required to maintain the stability of
a current loop.
When the output voltage is less than the reference, A. Converter Efficiency
NMOS switch (M1) turns on and the current passing through The energy loss associated with the converter inductor
the inductor keeps increasing up to comes from the inductor conduction loss (PL,R) due to
I max = D1Vin Lf = Vin 2 Lf osc (3) parasitic series resistor and inductor switching loss associated
with the parasitic capacitance (PL,C):
where
PL = PL , R + PL ,C = ( D1 + D2 ) N 3 × (Vin 2 f osc L ) α L
2
D1 = 1 2Tf osc (4), (8)
+C p Vin2 + (Vout − Vin ) f osc 2 D1 N
2
D1 is the ratio of NMOS on-period to the switching period 1/f
(T) (Figure 4). After 1/2fosc (Tosc/2), the NMOS switch is
turned off by the oscillator. At the same time, the PMOS where Cp is the parallel parasitic capacitance of the inductor
switch (M2) in the CCR turns on and keeps on for D2T. D2 is and α is a constant to determine the series resistance of the
the ratio of PMOS on-period to the switching period. The inductor under the assumption that series resistance is
inductor current passes though the PMOS switch and charges proportional to the square root of the inductance, since the
Cload and Rload. The PMOS switch has incorporated a quality factor (Q) and parasitic capacitance of discrete
comparator to achieve automatic control of its on-off status inductor almost remain constant for a wide range of
and forms the CCR, which addresses the dead-time issues and inductance values. Losses from NMOS and PMOS switches
make the switch behaves like a synchronous diode. When the exist. For simplicity, we assume both NMOS and PMOS
PMOS switch is on, the inductor current keeps decreasing. consume the same amount of power.
When inductor current reaches zero, CCR turns the PMOS off For a transistor switch, the loss consists of conduction
and prevents the output from charging the inductor. The time loss and switching loss:
2
it takes for inductor to decrease from Imax to 0 satisfies:
PNMOS = Pcond
1 V
+ Psw = in
( D1 + D2 ) N
I max = D2 (Vout − Vin ) Lf (5) 3 2 f osc L βW L (Vout − Vth ) (9)
Thus from Eq. (1) and (2), we have
+CoxWLVout 2 f osc 2 D1 N
D2 = D1Vin (Vout − Vin ) (6)
where Cox, β, Vth are device parameters associated with
Due to the delay of comparator, the switching events technology. W and L are the width and length of the switch,
keep happening N times as shown in Figure 4. respectively.
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700
form of:
600
ECload ,( n +1)T = MECload , nT + ΔEin (1 + T Rload Cload )
−1
(13)
500
400
where
0.32
0.26005 T T
M = 1 − 1 + < 1 (14)
300 902
0.21
798
R C
load load Rload Cload
200
0.2179
100
8 Since ΔEin is bounded and M < 1, ΔECload is bounded. Thus,
1 2 3 4 5 6 7 8 9 10
Inductor (mH)
(b) the system is always stable.
Figure 5: Optimizing oscillator frequency and inductor for high
efficiency DC-DC converter with 10 μW load when the power switch C. Output Ripple
is sized as: (top) W/L= 500 and (bottom) W/L= 5,000 A single pulse current from the inductor charges the
output load capacitor and resistor, which results in a voltage
In addition, biasing circuit, reference, oscillator, increment Δv on the converter output voltage. Solving
comparator, body diodes, etc. consume a finite amount of differential equations, the voltage increment caused by single
power. These circuits are either biased in sub-threshold region pulse is
or current limited. Their combined power consumption is
approximately 1 µW, which is ignored in the analysis for Δv = Δvsgl + − Δvsgl − (15)
simplicity. This omission results in inaccuracy to compute the R V R2 C
efficiency at low power level. Consequently, the total power Δvsgl + = Vout − load in − load load (Vout − Vin )
loss is 2 Lf osc L (16)
Ploss = PL + PNMOS + PPMOS ≈ PL + 2 PNMOS (10) − 2 R C Vfin V −V R V
× e load load osc ( out in ) − 1 − load in
From Eq. (8)-(10), the total converter power loss is 2 Lf osc
plotted with a 10 μW load at 0.9 V for a switch with sizes of
W/L = 500 and 5,000 in Figure 5. Large inductor is suggested 1 1
−
Vin
Rload Cload f osc 2(Vout −Vin ) f osc
to achieve high efficiency, which also dominates the dynamic Δvsgl −
= −Vout 1 − e − Veqconv (17)
loss of the converter. The switch is sized to ensure parasitic
gate/drain capacitance (~100's fF with the designed transistor
sizes) is smaller than inductor capacitance (Cp: typically a few where, Veqconv is the equivalent voltage drop on the Cload to
pFs) and its turn-on resistance is insignificant to inductor supply the DC-DC converter during the single pulse charge
series resistance (RL). As a result, power loss is not sensitive event. Thus, N pulses cause the output varied by:
to the switch sizes (Figure 5) and W/L of the switch (L = 0.18 Δv+ = N Δv (18)
μm) should be 500-5,000. When W/L is greater than 5,000, When no pulse current is present, the output resistor
the transistor loss is dominated by the switching loss, which is discharges Cload in the rest of the switch period (T) and the
sensitive to the output voltage as shown in Eq. (8)-(9). Thus, output voltage decreases by:
W/L = 500 is used in the design. Moreover, the efficiency Δv− ≈ Vout Rload Cload × (T − N f osc ) (19)
shows less sensitivity to oscillator frequency for W/L = 500.
The maximum efficiency is achieved with a 4-5 mH inductor Finally, the voltage ripple could be determined as
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Δvout ,rppl = Δv+ + Δv− (20) Cload is charged. Moreover, the net voltage increase has to be
greater than zero to ensure the function of the converter. As a
Clearly, large inductor, high oscillator frequency and result, the inductance should be limited to just ensure the
large load capacitor help to reduce the ripple. Choices of voltage increment (Δv) is greater than zero in the maximum
inductance and oscillator frequency are limited by efficiency loading condition to enhance converter efficiency, reduce
and maximum power requirement. In our design, large load output voltage ripple and meet the maximum power (or
capacitor is utilized to suppress the ripple to 10’s mV level. minimum Rload) specification simultaneously.
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times larger than the converter load capacitor. Such capacitor logic function to control the loop, i.e. when In+ (scaled
is typically in a discrete form and is in parallel to the MFC version of Vout by output resistor divider) is smaller than In-
output. The MFC is miniaturized, yet still has very large form (reference value), the comparator outputs logic high. The pre-
factor compared to IC; thus this discrete capacitor does not amplification, final amplification stage and inverter stage are
have significant impact on the overall form factor. In our current limited to operate with low power. Notice that there is
simulation and experiment, a 100 µF (through hole no current limiting device on the regeneration stage as the
component was used in the experiment. Surface mount current in the regeneration stage is already regulated by the
component with sizes 3.2 mm × 1.6 mm is available) is gate voltages on M43 and M44. Such features make the
demonstrated to be enough for the converter to operate at 0.9- comparator a very low power design, which consumes less
1.2 V. The internal circuit is biased from the converter output than 100 nW from simulations. In the regeneration stage, the
in nominal operation, no cascode output or stacked structure cross-coupled PMOSs (M47-M50) provide fast regeneration to
is used to make the circuit functional without adopting minimize the comparator delay. From the simulation, with a 3
sophisticated low voltage design techniques. mV differential input, the comparator takes 5 µs to resolve the
value to the rail.
B. CMOS Control Rectifier
CMOS Control Rectifier (CCR) was proposed to provide E. Start-up and Supply Switching
adaptive dead-time control [17]. It switches the PMOS M2 on, The MFC and the start-up capacitor power the control
when the inductor is fully charged. It also turns the M2 off circuit when the converter is connected at first. As the circuit
when the current of the inductor approaches zero. Such an loads the MFC, the MFC output voltage starts to decrease,
adaptive control is provided by comparing the voltages on the and the output voltage of the converter keeps increasing.
two terminals of the CCR. The schematic of the CCR used in When the converter output is greater than that of MFC, the
our design is shown in Figure 6. The voltage difference is control circuit is cut off from MFC/start-up capacitor and is
converted as current difference by the current mirror pairs supplied by the converter output.
M3/M4 and M5/M7. Through the coupled current mirrors, the The schematic of an automatic switching circuit is shown
source of M8 preserves the relation between Vs and Vout. Thus, in Figure 9, which manages the transition of converter power
the drain of M10 is pulled up or pulled down to drive M2, supply from MFC/start-up capacitor to the converter output.
through an inverter U1. The inverter U1 includes current The circuit consists of a comparator and a 2-to-1 switch. The
limiting device to limit the current flow during the switching comparator controls the switch (M38-M40) based on the
event for low power operation. The current limiting device is relation between MFC voltage and the output voltage of the
implemented by a PMOS transistor sourcing current to the converter. M34 and M37 are skewed to ensure the transition
driver. The current is optimized not to waste the transition when the output voltage is slightly higher than that of the
period of M2. In the design, the sources of PMOS in the MFC. M38 and M39 are stacked in series to limit the leakage
current mirrors are used to sense the voltage difference between Vin (MFC) and Vout (the output of the converter).
between Vs and Vout. The capacitor Cc provides hysteresis to
prevent unwanted noise switching the transistors and helps to
stabilize the operation of the CCR through feedback.
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Table 1: Comparison of the performance of low power high [14] Z. Lukic, N. Rahman, A. Prodic, "Multibit Σ-Δ PWM digital controller
efficiency converters IC for DC-DC converters operating at switching frequencies beyond 10
BQ25504 Paing, et Carlson, MHz", IEEE Transactions on Power Electronics, vol. 22, no. 5, pp.
This work 1693-707, 2007
[9] al.[10] et al.[6] [15] S.S. Kudva, R. Harjani, "Fully-Integrated On-Chip DC-DC Converter
Input voltage >0.6 With a 450X Output Range", IEEE Journal of Solid-State Circuits, vol.
0.13-3 0.135 <0.24
(V) (start-up) 46, no. 8, pp. 1940-51, 2011
Output [16] HM. Ferdowsi, A. Emadi, M. Telefus, C. Davis, "Pulse regulation
1.8 4.15 0.6-1.3 0.9-1.2 control technique for flyback converter", IEEE Transactions on Power
voltage (V)
Peak 60% Electronics, vol. 20, no. 4, pp. 798-805, 2005
37% 64% 85% [17] T.Y. Man, P.K.T. Mok, M. Chan, "A CMOS-control rectifier for
efficiency at at 1.8V
at 4.15V at 0.9V at 0.9V discontinuous-conduction mode switching DC-DC converters", IEEE
µW level (Vin=0.4) International Solid-State Circuits Conference, 2006
Maximum
300 mW 400 µW 100 µW 10 µW
power
Xu Zhang received the B.S. degree in Electronic Engineering
Extra battery Yes Yes Yes No
from Tsinghua University, Beijing, China, in 2006, and the
Process NA discrete 0.13 µm 0.18 µm
Ph.D. degree in Electrical Engineering from Arizona State
. University, Tempe, USA in 2012. Currently, he works with
VI. Conclusion NXP Semiconductors, Inc. His areas of interest include power
A miniaturized MFC is an energy converter, utilizing electronics, interface circuits and high speed/microwave
renewable energy sources. However, the MFC has several devices and circuits.
limitations including its low output voltage and load
dependent characteristics. To address the limitations, a high Hao Ren received the B.S. degree in Mechanical Engineering
efficiency DC-DC converter is designed, aiming to boost and from University of Science and Technology of China, Hefei,
stabilize the output of MFC. Measurements suggest that the China, in 2008, and the M.S. in Optical Engineering from
converter can provide a load independent output at 0.9 V - 1.2 Chinese Academy of Sciences, Chengdu, China, in 2011. He
V with a peak conversion efficiency of 85 %. is currently working toward the Ph.D. degree in Electrical
Engineering at Arizona State University.
VII. Reference
[1] H. Ren, J. Chae, “Scaling Effect on MEMS-based Microbial Fuel Cells:
Toward a Carbon-neutral Miniaturized Power Source,” Solid-state Soonjae Pyo received the B.S. degree in Mechanical
Sensors, Actuators, and Microsystems Workshop, SC, 2012. Engineering from Yonsei University, Seoul, Korea, in 2009.
[2] S. Choi and J. Chae, "Optimal Biofilm Formation and Power He is currently working toward the PhD degree in Mechanical
Generation in a Micro-sized Microbial Fuel Cell (MFC)", Sensors and Engineering at the Yonsei University as a researcher of Nano
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[3] H. Ren, H. Lee, and J. Chae, "Miniaturizing Microbial Fuel Cells for Transducers Laboratory.
Potential Portable Power Sources: Promises and Challenges",
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[4] S. Choi and J. Chae, "An array of microliter-sized microbial fuel cells Engineering from Yonsei University, Seoul, Korea, in 2008.
generating 100 μW of power", Sensors and Actuators A, vol. 177, pp.
10-15, 2012 He is currently working toward the PhD degree in Mechanical
[5] X. Zhang, J. Chae, “Working Distance Comparison of Inductive and Engineering at the Yonsei University as a researcher of Nano
Electromagnetic Couplings for Wireless and Passive Underwater Transducers Laboratory.
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[6] E.J. Carlson, K. Strunz, B.P. Otis, "A 20 mV Input Boost Converter Jongbaeg Kim received the B.S. degree in Mechanical
With Efficient Digital Control for Thermoelectric Energy Harvesting", Engineering from Yonsei University, Seoul, Korea, in 1997,
IEEE Journal of Solid-State Circuits, vol. 45, no. 4, pp. 741-50, 2010 the M.S. degree in mechanical engineering from the
[7] T. Endoh, K. Sunaga, H. Sakuraba, F. Masuoka, "An on-chip 96.5% University of Texas, Austin, TX, in 1999, and the Ph.D.
current efficiency CMOS linear regulator using a flexible control
technique of output current", IEEE Journal of Solid-State Circuits, vol. degree in mechanical engineering from the University of
36, no. 1, pp. 34-9, 2001 California, Berkeley, in 2004. He joined the Yonsei
[8] J. Wibben, R. Harjani, "A High-Efficiency DC–DC Converter Using 2 University in 2005, where he is currently an Associate
nH Integrated Inductors" IEEE Journal of Solid-State Circuits, vol. 43, Professor with the School of Mechanical Engineering.
no. 4, pp. 844-854, 2008
[9] BQ25504, datasheet, Texas Instruments, Inc. http://www.ti.com/
[10] T. Paing, J. Shin, R. Zane, Z. Popovic, "Resistor emulation approach to Junseok Chae received the B.S. degree in metallurgical
low-power RF energy harvesting," IEEE Transactions on Power engineering from Korea University, Seoul, Korea, in 1998,
Electronics, vol. 23, no. 3, pp. 1494–1501, 2008. and the M.S. and Ph.D. degrees in electrical engineering and
[11] J.-M. Liu, P.-Y. Wang, T.-H. Kuo, "A Current-Mode DC-DC Buck
Converter with Efficiency-Optimized Frequency Control and computer science from the University of Michigan, Ann
Reconfigurable Compensation", IEEE Transactions on Power Arbor, in 2000 and 2003, respectively. He joined Arizona
Electronics, vol. 27, no. 2, pp. 869-80, 2012 State University, Tempe, in 2005, as an assistant professor,
[12] Y. Zeng, Y.F. Choo, B.-H. Kim, P. Wu, "Modelling and simulation of and he is currently an associate professor of electrical
two-chamber microbial fuel cell", Journal of Power Sources, vol. 195,
no. 1, pp. 79-89, 2010 engineering. His areas of interest are microdevices for
[13] B. Sahu, G.A. Rincon-Mora, "A low voltage, dynamic, noninverting, bioenergy, implantable microdevices, and integrating MEMS
synchronous buck-boost converter for portable applications", IEEE with readout/control electronics.
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