Semiconductor Devices Lab

© Mr. S. Karthikeyan, Mr. D. Antony Pradeesh

First Published: 2021
Published by: Inam Pathippagam, Coimbatore – 641016.
Pages: 61
ISBN: 978-93-92293-24-5
 LAB MANUAL

SEMICONDUCTOR DEVICES LAB

AUTHORS

Mr. S. Karthikeyan Mr. D. Antony Pradeesh

Assistant Professor Assistant Professor,

Department of Electronics and Communication Department of Electronics and Communication

Systems, Systems,

KG College of Arts and Science. KG College of Arts and Science.

[email protected] [email protected]
 PREFACE
Electronics have become an important part of our day-to-day life. We live in a generation that
uses electronic devices and other technologies to do our work with more ease and efficiency. It is
almost difficult for us to do any work without using electronic devices. This practical subject
“Semiconductor Devices Lab” will cover all the basic functions of electronic components and
semiconductor characteristic techniques.

This manual will encourage students to assemble and test real circuits in the laboratory. All the
circuit diagrams given in this manual have been tested in our electronics lab. Almost all the
circuit diagrams are complete with component values, so the students will have no difficulty in
constructing the circuits to verify their outputs.
 COURSE OBJECTIVES

The main objectives of this course are:

1. To understand and experiment the basic parameters of electronic devices.

2. To construct a few applications using semiconductor devices.

LIST OF EXPERIMENTS
1. BAND GAP ENERGY OF SILICON /
15. CHARACTERISTICS OF LDR
GERMANIUM DIODE
2. V-I CHARACTERISTICS OF JUNCTION
16. CHARACTERISTICS OF SOLAR CELL
DIODE
3. V-I CHARACTERISTICS OF ZENER DIODE 17. STUDY OF IR (Tx & Rx)
4. TRANSISTOR CHARACTERISTICS OF CE 18. STUDY OF LED AND 7 SEGMENT
CONFIGURATION DISPLAY
5. TRANSISTOR CHARACTERISTICS OF CB 19. TEMPERATURE CO-EFFICIENT OF
CONFIGURATION JUNCTION DIODE

6. TRANSISTOR CHARACTERISTICS OF CC 20. ZENER AS A VOLTAGE REGULATOR

CONFIGURATION
21. ON / OFF CONTROL OF RELAY USING
7. CLIPPING CIRCUITS
OPTO –COUPLERS
8. CLAMPING CIRCUITS 22. CHARACTERISTICS OF SCR
9. MEASUREMENT OF STABILITY FACTOR
23. TRIAC CHARACTERISTICS
OF FIXED BIAS
10. MEASUREMENT OF STABILITY FACTOR
OF SELF BIAS

11. V-I CHARACTERISTICS OF JFET

12. V-I CHARACTERISTICS OF UJT

13. UJT AS OSCILLATOR

14. FET AS VOLTAGE VARIABLE

(ANY 16 EXPERIMENTS)
RESISTOR(VVR)
 COURSE OUTCOMES

On the successful completion of the course, student will be able to:

1. Experiment the fundamental operations of the main semiconductor electronic devices.

2. Design and construct electronic circuits using semiconductor devices.
3. Understand the transistor characteristics
4. Understand the characteristics of LDR and solar cell
 TABLE OF CONTENTS

S. No. NAME OF THE EXPERIMENT PAGE No.

1 V-I CHARACTERISTICS OF JUNCTION DIODE 1

2 V-I CHARACTERISTICS OF ZENER DIODE 5

3 ZENER AS A VOLTAGE REGULATOR 9

4 CLIPPING CIRCUITS 11

5 CLAMPING CIRCUITS 16

6 STUDY OF LED AND 7 SEGMENT DISPLAY 20

7 TRANSISTOR CHARACTERISTICS OF CE CONFIGURATION 24

8 TRANSISTOR CHARACTERISTICS OF CB CONFIGURATION 29

9 V-I CHARACTERISTICS OF UJT 34

10 V-I CHARACTERISTICS OF JFET 38

11 MEASUREMENT OF STABILITY FACTOR OF FIXED BIAS 44

12 MEASUREMENT OF STABILITY FACTOR OF SELF BIAS 47

13 CHARACTERISTICS OF LDR 50

14 CHARACTERISTICS OF SOLAR CELL 53

15 UJT AS OSCILLATOR 58

16 STUDY OF IR (Tx & Rx) 60

 Department of Electronics and Communication Systems, KGCAS

V-I CHARACTERISTICS OF JUNCTION DIODE

Exp. No. 1

Aim:

To study and verify the V-I characteristics of silicon P-N Junction Diode.

Apparatus Required:

S. No. Name of the Component Range Quantity

1. Diode IN4007 1
2. Resistor 1KΏ 1
3. DC Regulated power (0 – 30V) 1
supply
4. Ammeter (0-30)mA, (0- 1
500)μA
5. Voltmeter (0 – 1)V, (0 – 30)V 1
6. Breadboard, Connecting Wires

Procedure:

Forward Biased Condition:

1. Connect the PN Junction diode in forward bias. Anode is connected to the positive of the
power supply and the cathode is connected to the negative of the power supply.
2. Use a regulated power supply of range (0-30) V and a series resistance of 1kΏ.
3. For various values of forward voltage (VF) note down the corresponding values of
forward current (IF).
Reverse Biased Condition:

1. Connect the PN Junction diode in reverse bias. Anode is connected to negative of the
power supply and cathode is connected to positive of the power supply.
2. For various values of (VR) note down the corresponding values of reverse current (IR).

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Circuit Diagram:

Forward Bias:

Tabular column:

Forward Bias:

S. No. VF (volts) IF (mA)

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Reverse Bias:

Tabular column:

Reverse Bias:

S. No. VR (volts) IR (μA)

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Graph:

1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the centre of the graph
sheet.
2. Now mark +ve X-axis as VF, -ve X-axis as VR, +ve Y-axis as IF and –ve Y-axis as IR.
3. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si
reverse biased condition in third Quadrant.

Model Graph:

Result:

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V-I CHARACTERISTICS OF ZENER DIODE

Exp. No. 2

Aim:

To study and verify the V-I characteristics of zener diode and measure the zener break
down voltage.

Apparatus required:

Name of the
S.No. Range Quantity
Components

1. Zener Diode 5.1 V - 1

2. Resistor 1KΏ 1
DC Regulated power
3. (0 – 30V) 1
supply
4. Ammeter (0-30)mA, (0-500)μA 1
5. Voltmeter (0 – 1)V, (0 – 30)V 1

6. Breadboard, Connecting Wires

Procedure:

Forward Biased Condition:

1. Connect the Zener diode in forward bias. Anode is connected to positive of the power
supply and cathode is connected to negative of the power supply as in circuit
2. Use a Regulated power supply of range (0-30) V and a series resistance of 1kΏ.
3. For various values of forward voltage (VF) note down the corresponding values of
forward current (IF).

Reverse Biased Condition:

1. Connect the Zener diode in Reverse bias. Anode is connected to the negative of the
power supply and cathode is connected to the positive of the power supply as in circuit.
2. For various values of reverse voltage (VR) note down the corresponding values of reverse
current (IR).

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Circuit Diagram:

Forward Bias:

Tabular column:

Forward Bias:

S. No. VF (volts) IF (mA)

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Reverse Bias:

Tabular column:

Reverse Bias:

S. No. VR (volts) IR (μA)

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Graph:

1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the centre of the graph
sheet.
2. Now mark +ve X-axis as VF, -ve X-axis as VR, +ve Y-axis as IF and –ve Y-axis as IR.
3. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si
reverse biased condition in third Quadrant.

Model Graph:

Result:

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ZENER AS A VOLTAGE REGULATOR

Exp. No. 3

Aim:

To study and verify the zener diode as voltage regulator.

Apparatus Required:

Name of the
S.No. Range Quantity
Components
1. Zener Diode 5.1 V - 1
2. Resistor 1KΏ, 470Ώ 1
3. Regulated power supply (0 – 30V) 1
4. Ammeter (0-30)mA, (0-500)μA 1
5. Voltmeter (0 – 1)V, (0 – 30)V 1
6. Breadboard, Connecting Wires

Procedure:

Forward Biased Condition:

1. Connect the Zener diode in forward bias. Anode is connected to positive of the power
supply and cathode is connected to negative of the power supply as in circuit
2. Use a Regulated power supply of range (0-30) V and a series resistance of 1kΏ.
3. For various values of forward voltage (Vf) note down the corresponding values of
forward

Reverse Biased Condition:

1. Connect the Zener diode in Reverse bias. Anode is connected to the negative of the power
supply and the cathode is connected to the positive of the power supply as in circuit.
2. For various values of reverse voltage (VR) note down the corresponding values of reverse
current (IR).

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Circuit Diagram:

Tabular column:

S. No. VR (volts) IR (μA)

Result:

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CLIPPING CIRCUITS
Exp. No. 4

Aim:

To construct the clipping circuit using 1N4007 diode and verify the output waveform
with the CRO.

Apparatus Required:

Name of the
S.No. Range Quantity
Components

1. Diode IN4007 1

2. Resistor 1KΏ 1

3. Function Generator - 1

4. CRO - 1

5. Regulated power supply (0 – 30V) 1

6. Breadboard, Connecting Wires

Types of Clippers:

(i) Positive Clipper

(ii) Negative clipper

(iii) Biased Clipper

(iv) Combination Clipper

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Positive Clipper Circuit Diagram:

Series Positive Clipper:

Shunt Positive Clipper:

Negative Clipper Circuit Diagram:

Series Negative Clipper :

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Shunt Negative Clipper

Positive Biased Clipper Circuit Diagram:

Negative Biased Clipper Circuit Diagram:

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Combinational Clipper:

Procedure:

Positive clipper:
It consists of a Diode and resistor with output taken across the resistor. The diode acted
as an ideal switch between the source and Load. It acts as a closed switch, when the input voltage
is negative (i.e Vi< 0) and as an open switch when the input voltage is positive or zero. (i.e Vi>
0). The purpose of the Resistor (R) is to limit the current through the diode, when it acts as a
closed switch.
Negative clipper:
When the diode is forward biased (acts as a closed switch). The diode acts as a closed
switch for positive (i.e Vi> 0) and as an open switch for a negative input voltage (i.e Vi< 0). The
purpose of the Resistor (R) is to limit the current through the diode.
Biased clipper:
A clipping circuit, which has a provision for the adjustment of clipping level, is called a
biased clipper. The name ‘bias’ is designated because the adjustment of the clipping level is
achieved by adding a bias voltage in series with the diode or resistor.
Combination clipper:
The combination of a biased positive clipper and a biased negative clipper is called
combination clipper. Such a clipper circuit can clip at two-independent levels depending upon
the bias voltage. It may be noted that the clipping levels of the circuit can be varied by changing
the values of the VB Voltages. If the two VB‘s are equal the circuit will clip both the positive

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and negative half cycles at the same voltage level. Such a circuit is known as a symmetrical
clipper.
Use of the clipping circuits:
Clipping circuits (also known as limiters, amplitude selectors, or slicers), are used to
remove the part of a signal that is above or below some defined reference level. It is Used in
Digital computers, Radars, Radio and television receivers etc...

Diode Symbol:

Result:

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CLAMPING CIRCUITS
Exp. No. 5

Aim:

To construct the clamping circuit using 1N4007 diode and verify the output waveform
with CRO.

Apparatus Required:

S.No. Name of the Components Range Quantity

1. Diode IN4007 1

2. Resistor 1KΏ 1

3. Capacitor 1uF/ 25V 1

4. Function Generator - 1

5. CRO - 1

6. DC Regulated power supply (0 – 30V) 1

7. Breadboard, Connecting Wires

Types of Clampers:

(i) Positive clamper

(ii) Negative clamper

(iii) Positive biased clamper

(iv) Negative biased clamper

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Positive Clamper Circuit Diagram:

Negative Clamper Circuit Diagram:

Positive Biased Clamper Circuit Diagram:

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Negative Biased Clamper Circuit Diagram:

Procedure:

Clamper:
A Clamper circuit can be defined as the circuit that consists of a diode, a resistor and a
capacitor that shifts the waveform to a desired DC level without changing the actual appearance
of the applied signal. A clamper circuit is called a Level Shifter.
Positive Clamper:
A Clamping circuit restores the DC level. When a negative peak of the signal is raised
above to the zero level, then the signal is said to be positively clamped. A Positive Clamper
circuit is one that consists of a diode, a resistor and a capacitor and that shifts the output signal to
the positive portion of the input signal.Initially when the input is given, the capacitor is not yet
charged and the diode is reverse biased. The output is not considered at this point of time. During
the negative half cycle, at the peak value, the capacitor gets charged with negative on one plate
and positive on the other. The capacitor is now charged to its peak value Vm. The diode is
forward biased and conducts heavily.During the next positive half cycle, the capacitor is charged
to positive Vm while the diode is reverse biased and gets open circuited. The output of the circuit
at this moment will be
V0=Vi+Vm

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Negative Clamper:
A Negative Clamper circuit is one that consists of a diode, a resistor and a capacitor and
that shifts the output signal to the negative portion of the input signal. During the positive half
cycle, the capacitor gets charged to its peak value Vm. The diode is forward biased and conducts.
During the negative half cycle, the diode gets reverse biased and gets open circuited. The output
of the circuit at this moment will be
V0=-Vi-Vm
Biased Clamper:
A Positive clamper circuit if biased with some positive reference voltage, that voltage
will be added to the output to raise the clamped level. Using this, the circuit of the positive
clamper with positive reference voltage is constructed in this diagram. During the positive half
cycle, the reference voltage is applied through the diode at the output and as the input voltage
increases, the cathode voltage of the diode increases with respect to the anode voltage and hence
it stops conducting. During the negative half cycle, the diode is forward biased and starts
conducting. The voltage across the capacitor and the reference voltage together maintain the
output voltage level.
A Negative clamper circuit if biased with some negative reference voltage, that voltage
will be added to the output to raise the clamped level. Using this, the circuit of the negative
clamper with negative reference voltage is constructed in this diagram.The cathode of the diode
is connected with a negative reference voltage, which is less than that of zero and the anode
voltage. Hence the diode starts conducting during the positive half cycle, before the zero voltage
level. During the negative half cycle, the voltage across the capacitor appears at the output. Thus
the waveform is clamped towards the negative portion.

Result:

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STUDY OF LED AND 7 SEGMENT DISPLAY

Exp. No. 6

Aim:

To study and verify the output of BCD to a seven segment display circuit using IC 7447.

Apparatus Required:

S.No. Components Range Quantity

1. IC IC7447 1

2. Resistor 150Ω 1

Seven segment
3. Common Anode 1
display

4. DC Power supply 5V 1

5. Breadboard, Connecting Wires

BCD to 7 Segment Display:

In this BCD to 7 segment display circuit, we provide binary input with the help of tactile
switches. With the help of four switches we can provide a four bit BCD (binary coded decimal)
value. This will energize the proper output lines according to the switch pressed to form a
corresponding numeric value on a 7 segment display. To understand the IC first have a look at its
pin configuration. Here pins A, B, C, D are used to provide the BCD input where A is the least
significant bit and D is the most significant bit. The pattern of LEDs is the same as in a
conventional 7 segment display. Now make the connection as shown in the circuit diagram.
When you press Switch S1 (this time the first switch is at logic 1 else is at logic 0) then you will
receive a numeric 1 on the display. Because with the help of switches you have pressed the
binary code 0001. Similarly for numeric 2 BCD code is 0010 means you have to press switch S2
and for 3 code is 0011 and so on. Table below will help you how to calculate the binary code for
an individual number. In the table shown below cross means they are stuck in don’t care
condition. This means it will not affect the output when logic zero or one is pressed.

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Pin Configuration:

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Circuit Diagram:

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Truth Table:

Input Seven Segment Display

D(6) C(2) B(1) A(7) Output
a b c d e f g
8 4 2 1
0 0 0 0 ON ON ON ON ON ON OFF 0
0 0 0 1 OFF ON ON OFF OFF OFF OFF 1
0 0 1 0 ON ON OFF ON ON OFF ON 2
0 0 1 1 ON ON ON ON OFF OFF ON 3
0 1 0 0 ON OFF ON OFF OFF ON ON 4
0 1 0 1 ON OFF ON ON OFF ON ON 5
0 1 1 0 OFF OFF ON ON ON ON ON 6
0 1 1 1 ON ON ON OFF OFF OFF OFF 7
1 0 0 0 ON ON ON ON ON ON ON 8
1 0 0 1 ON ON ON ON OFF OFF ON 9

Procedure:
1. Make the connections as per the logic diagram.
2. Connect +5v and Ground according to pin configuration.
3. Apply different combinations of inputs to the input terminals.
4. Note output for summation.
5. Verify the truth table.
Precautions:
1. Make the connections according to the IC pin diagram.
2. The connections should be tight.
3. The Vcc and ground should be applied carefully at the specified pin only.

Result:

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TRANSISTOR CHARACTERISTICS OF COMMON EMITTER

Exp. No. 7
CONFIGURATIONS
Aim:

To study the input and output characteristics of a bipolar junction transistor in common
emitter configuration.

Apparatus Required:

S.No. Components Range Quantity

1. Transistor BC107 1

2. Resistor 100 KΩ, 1KΩ 1

3. Ammeter (1-200)mA, (0-500)μA 1

4. Voltmeter (0 – 1)V, (0 – 30)V 1

Dual DC Regulated
5. (0 – 30V), 2A Rating 1
power supply

6. Breadboard, Connecting Wires

Introduction:

Bipolar junction transistor (BJT) is a 3 terminal (emitter, base, collector) semiconductor

device. There are two types of transistors namely NPN and PNP. It consists of two P-N junctions
namely emitter junction and collector junction.

In Common Emitter configuration the input is applied between base and emitter and the
output is taken from collector and emitter. Here the emitter is common to both input and output
and hence the name common emitter configuration.

Input characteristics are obtained between the input current and input voltage taking
output voltage as parameter. It is plotted between VBE and IB at constant VCE in CE
configuration.

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Output characteristics are obtained between the output voltage and output current taking
input current as parameter. It is plotted between VCE and IC at constant IB in CE configuration.

Pin Configuration:

View from side of pins View from top of casing

Circuit Diagram:

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Procedure:

Input Characteristics:

1. Connect the transistor in CE configuration as per circuit diagram

2. Keep output voltage VCE = 0V by varying VCC.

3. Varying VBB gradually, note down both base current IB and base - emitter voltage
VBE).

4. Repeat above procedure (step 3) for various values of VCE

Output Characteristics:

1. Make the connections as per circuit diagram.

2. By varying VBB keep the base current IB = 20µA.

3. Varying VCC gradually, note down the readings of collector-current (IC) and
collector- emitter voltage (VCE).

4. Repeat above procedure (step 3) for different values of I E

Tabular column:

Input Characteristics:

S. No. VCE = VCE = VCE =

VBE (volts) IB (mA) VBE (volts) IB (mA) VBE (volts) IB (mA)

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Output Characteristics:

S. No. IB = IB = IB =

VCE (volts) IC (mA) VCE (volts) IC (mA) VCE (volts) IC (mA)

Model Graph:

Input characteristics Output characteristics

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Precautions:

1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage to the transistor.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Result:

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TRANSISTOR CHARACTERISTICS OF COMMON BASE

Exp. No. 8
CONFIGURATIONS
Aim:

To study the input and output characteristics of a transistor in common base configuration.

Apparatus Required:

S.No. Name of the Components Range Quantity

1. Transistor BC107 1

2. Resistor 1KΩ 2

3. Ammeter (0-200)mA 2

4. Voltmeter (0 – 20)V 2
Dual DC Regulated power (0 – 30V), 2A
5. 1
supply Rating

6. Breadboard, Connecting Wires

Operation:

Bipolar Junction Transistor (BJT) is a three terminal (emitter, base, collector)

semiconductor device. There are two types of BJTs, namely NPN and PNP. It consists of two PN
junctions, namely emitter junction and collector junction.

The basic circuit diagram for studying input characteristics is shown in the circuit
diagram. The input is applied between emitter and base, the output is taken between collector
and base. Here the base of the transistor is common to both input and output and hence the name
is Common Base Configuration.

Input characteristics are obtained between the input current and input voltage at constant
output voltage. It is plotted between VEE and IE at constant VCB in CB configuration.

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Output characteristics are obtained between the output voltage and output current at
constant input current. It is plotted between VCB and IC at constant IE in CB configuration.

Circuit Diagram:

Pin Configuration of Transistor:

View from side of pins View from top of casing

Procedure:

Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCB = 0V by varying VCC.

3. Varying VEE gradually, note down emitter current IE and emitter-base voltage (VEE).

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4. Step size is not fixed because of the nonlinear curve. Initially vary V EE in steps of 0.1 V.

Once the current starts increasing vary VEE in steps of 1V up to 12V.

5. Repeat above procedure (step 3) for VCB = 4V.

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IE = 5mA by varying VEE.

3. Varying VCC gradually in steps of 1V up to 12V and note down collector current I C and
collector-base voltage (VCB).

4. Repeat above procedure (step 3) for IE = 10mA.

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1. Plot the input characteristics for different values of VCB by taking VEE on X-axis

and IE on Y-axis taking VCB as constant parameter.

2. Plot the output characteristics by taking VCB on X-axis and taking IC on Y-axis

taking IE as a constant parameter.

Tabular Column:

Input Characteristics:

S. No. VCB = VCB = VCB =

VEE (volts) IE (mA) VEE (volts) IE (mA) VBE (volts) IE (mA)

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Output Characteristics:

S. No. IE = IE = IE =

VCB (volts) IC (mA) VCB (volts) IC (mA) VCB (volts) IC (mA)

Precautions:

1. While performing the experiment do not exceed the ratings of the transistor. This may lead
to damage the transistor.

2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.

3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.

4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Result:

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Exp. No. 9 V-I CHARACTERISTICS OF UJT

Aim:

To study and verify the VI characteristics of UJT.

Apparatus Required:

S.No. Name of the Components Range Quantity

1. UJT UJT 2N2646 1

2. Resistor 1KΩ 2

3. Ammeter (0-200)mA 1

4. Voltmeter (0 – 20)V 2
Dual DC Regulated power
5. (0 – 30V), 2A Rating 1
supply

6. Breadboard, Connecting Wires

Operation:

The UJT- junction is a 3 - terminal solid-state device (emitter and two bases). The
simplified equivalent circuit is shown below:

The device has only one PN junction and hence it is known as a UNI-JUNCTION
transistor. The PN emitter to base junction is shown as diode D1. The inter base resistance R BB
of the N-type Si bar appears as two resistors RB1 and RB2.

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Referring to equivalent circuit:

1. When no voltage is applied between B1 and B2 with emitter open, the inter base
resistance is give by RBB = RB1 + RB2.

2. When a voltage VBB is applied between B1 and B2 with emitter open, voltage will divide
up across RB1 and RB2.

VRB1 = VBB where = the intrinsic stand-off ration =

The VBB across RB1 reverse biased diode thereby dropping the emitter current to zero.

3. When supply is connected at the emitter, the diode is forward biased making the input
voltage to exceed by VD

%u200BVp = VBB + Vb

Since the diode is conducting, the resistance between emitter and base (B1) reduces and hence
the internal drop from emitter to B1 decreases.

The emitter conductivity characteristics are such that as IE increases the emitter to base
(B1) voltage decreases. At a peak point Vp and the valley point Vv, the slope of the emitter
characteristics is 0. At points to the left of VB to E-B1 is forward biased and IE exists. Between
Vp and Vv increase in IE is accompanied by a relation in emitter voltage VE. This is the negative

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resistance region of UJT. Beyond the valley point Vv an increase in IE is accomplished by an

increase in VE. This region is known as the saturation region.

Circuit Diagram:

Model Graph:

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Tabulation:

Input characteristics:

S. No. VBB = VBB =

VEB ( Volts) VE (volts) IE (mA) VE (volts) IE (mA)

Procedure:

1. Connect the circuit as shown in the circuit diagram.

2. Set output voltage VBB = 5V by varying VBB.
3. Varying VEE gradually, note down both emitter current I E and emitter voltage (VE).
4. Step size is not fixed because of the non linear curve. Initially Vary V EB in steps of 1V.
Current IE remains zero. As voltage is varied further, current starts increasing while
voltage VE drops. Note down the readings VE and IE.
5. Repeat above procedure (step 3) for VBB = 10V.

Result:

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 Department of Electronics and Communication Systems, KGCAS

Exp. No. 10 V-I CHARACTERISTICS OF JFET

Aim:

To study and verify the VI characteristics of a Field Effect Transistor (FET).

Apparatus Required:

S.No. Name of the Components Range Quantity

1. JFET BFW10 1

2. Resistor 1KΩ, 100KΩ, 1

3. Ammeter (0-200)mA 1

4. Voltmeter (0 – 20)V 2
Dual DC Regulated power (0 – 30V), 2A
5. 1
supply Rating

6. Breadboard, Connecting Wires

Operation:

The circuit diagram for studying drain and transfer characteristics is shown in the figure,

1. Drain characteristics are obtained between the drain to source voltage (V DS) and drain
current (ID) taking gate to source voltage (VGS) as the constant parameter.
2. Transfer characteristics are obtained between the gate to source voltage (V GS) and drain
current (ID) taking drain to source voltage (VDS) as the constant parameter.

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Circuit Diagram:

Pin Configuration of FET:

Top View Bottom View

Procedure:

Drain Characteristics:

1. Connect the circuit as shown in the figure1.

2. Keep VGS = 0V by varying VGG.
3. Varying VDD gradually in steps of 1V up to 10V note down drain current I D and drain to
source voltage (VDS).
4. Repeat above procedure for VGS = -1V.

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Tabulation:

Drain Characteristics:

S. No. VGS=0V VGS=-1V

VDD ( Volts) VDS (volts) ID (mA) VDS (volts) ID (mA)

Transfer Characteristics:

1. Connect the circuit as shown in the figure1.

2. Set voltage VDS = 2V/5V (BFW10/ BFW11).
3. Varying VDD in steps of 0.5V until the current ID reduces to minimum value.
4. Varying VGG gradually, note down both drain current I D and gate-source voltage(VGS).
5. Repeat above procedure (step 3) for VDS = 4V/ 8V (BFW10/ BFW11).

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Transfer Characteristics:

S. No. VDS= VDS=

VGG ( Volts) VGS (volts) ID (mA) VGS (volts) ID (mA)

Model Graph:

Drain Characteristics

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1. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at a constant VGS.

2. Plot the transfer characteristics by taking VGS on X-axis and taking ID on Y-axis at
constant VDS.

Calculations from Graph:

1. Drain Resistance (rd): It is given by the relation of small change in drain to source
voltage( VDS) to the corresponding change in Drain Current( ID) for a constant gate to source
voltage ( VGS), when the JFET is operating in pinch-off region.

at a constant VGS (from drain characteristics)

2. Trans Conductance (gm): Ratio of small change in drain current( ID) to the
corresponding change in gate to source voltage ( VGS) for a constant VDS.

gm at constant VDS (from transfer characteristics).

The value of gm is expressed in mho’s ( ) or Siemens (s).

3. Amplification factor (µ): It is given by the ratio of small change in drain to source
voltage ( VDS) to the corresponding change in gate to source voltage ( VGS) for a constant
drain current (ID).

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Precautions:

1. While performing the experiment do not exceed the ratings of the FET. This may lead to

damage of FET.

2. Connect voltmeter and ammeter with correct polarities as shown in the circuit diagram.

3. Do not switch ON the power supply unless the circuit connections are checked as per the

circuit diagram.

4. Properly identify the Source, Drain and Gate terminals of the transistor.

Result:

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 Department of Electronics and Communication Systems, KGCAS

Exp. No. 11 MEASUREMENT OF STABILITY FACTOR OF FIXED BIAS

Aim:

To construct the fixed bias circuit using transistor and calculate and tabulate the values of
IB, VCE.

Apparatus Required:

S.No. Name of the Components Range Quantity

1. Transistor BC547 1

2. Resistor RB=200K, Rc=1K 2

3. Ammeter (0-210)mA, (0-100)uA, 2

4. Voltmeter (0 – 20)V 1
DC Regulated power
5. (0 – 30V), 2A Rating 1
supply

6. Breadboard, Connecting Wires

Formula Used:

In mA

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Circuit Diagram:

Tabulation:

S. No Resistor in KΏ IC (uA) IB (mA) S=(1+B)*103

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Operation:

The circuit shown is called a “fixed base bias circuit”, because the transistors base current
IB remains constant for given values of Vcc, and therefore the transistors operating point must
also remain fixed. This two resistor biasing network is used to establish the initial operating
region of the transistor using a fixed current bias. This type of transistor biasing arrangement is
also beta dependent biasing as the steady-state condition of operation is a function of the
transistors beta β value, so the biasing point will vary over a wide range for transistors of the
same type as the characteristics of the transistors will not be exactly the same.

The emitter diode of the transistor is forward biased by applying the required positive
base bias voltage via the current limiting resistor RB. Assuming a standard bipolar transistor, the
forward base-emitter voltage drop will be 0.7V. Then the value of RB is simply: (VCC –
VBE)/IB where IB is defined as IC/β. With this single resistor type of biasing method, the
biasing voltages and currents do not remain stable during transistor operation and can vary
enormously. Also the temperature of the transistor can adversely affect the operating point.

NPN Transistor Symbol:

Result:

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Exp. No. 12 MEASUREMENT OF STABILITY FACTOR OF SELF BIAS

Aim:

To construct the voltage divider or self-bias circuit using transistor and calculate and
tabulate the values of IB, VCE.

Apparatus Required:

Name of the
S.No. Range Quantity
Components

1. Transistor BC547 1

R1=1KΏ -100KΏ,
2. Resistor R2=4.7KΏ, RC= 1.5KΏ, 4
RE=220Ώ

3. Ammeter (0-10mA), (0-500uA) 2

DC Regulated power
4. (0 – 30V), 2A Rating 1
supply

5. Breadboard, Connecting Wires

Formula:

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Circuit Diagram:

Tabulation:

Collector Base
Resistor in
S. No Current Current IB Stability Factor
KΏ B= Ic/ Ib
IC (uA) (mA)

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Theory:

A better method of biasing is obtained by inserting the bias resistor directly between the
base and collector. By tying the collector to the base in this manner, feedback voltage can be fed
from the collector to the base to develop forward bias. This arrangement is called SELF-BIAS.
Now, if an increase of temperature causes an increase in collector current, the collector voltage
(VC) will fall because of the increase of voltage produced across the load resistor (RL). This
drop in VC will be fed back to the base and will result in a decrease in the base current. The
decrease in base current will oppose the original increase in collector current and tend to stabilize
it.

The exact opposite effect is produced when the collector current decreases. The current in
the resistance RE in the emitter lead causes a voltage drop which is in the direction to reverse-
bias the emitter junction. Since this junction must be forward-biased, the base voltage is obtained
from the supply through the R1 & R2 network.

NPN Transistor Symbol:

Result:

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 Department of Electronics and Communication Systems, KGCAS

Exp. No. 13 CHARACTERISTICS OF LDR

Aim:

To draw the VI characteristics of the given LDR under

a) Various illumination levels at constant supply voltage.

b) Various supply voltage at constant illumination level.

Apparatus Required:

S.No. Components Range Quantity

1. LDR _
1

2. Resistor R=1K 1

3. Ammeter (0-10)mA 1

4. Voltmeter (0 – 10)V 1
Regulated power
5. (0 – 30V), 2A Rating 1
supply

6. Lamp 100W 1
7. Breadboard, Connecting Wires

Theory:
Light dependent resistors (LDRs) are made from cadmium sulphide containing no or very
free electrons when not illuminated. Its resistance is then quite high. When it absorbs light,
electrons are liberated and conductivity of the material increases.
The resistance rises to several megaohms under dark conditions.

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Circuit Diagram:

Tabulation:

S.No Distance (cm) Voltage (V) Current (A)

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Procedure:
1. Rig up the circuit as per the circuit diagram.
2. maintain a known distance (first 5 cm, second 10 cm, third 15 cm) between bulb & the
LDR
3. Vary the voltage in the power supply in steps note down the corresponding voltmeter &
ammeter readings.
4. Maintain the constant input voltage, By varying the distance, the corresponding Ammeter
readings are noted.

Application:

1. ON - OFF switch
2. Relay control
3. Voltage regulator
4. Burglar alarms
5. Object counters

Result:

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 Department of Electronics and Communication Systems, KGCAS

Exp. No. 14 CHARACTERISTICS OF A SOLARCELL

Aim:
Study of I-V Characteristic of a solar cell illuminated by an incandescent lamp, at different
frequencies
Apparatus Required:

S.No. Name of the Components Range Quantity

1. Solar Cell 1
12V
2. Resistor R=1K – 10K 1

3. Ammeter (0-10)mA 1

4. Voltmeter (0 – 10)V 1
5. Lamp 100W 1
6. Breadboard, Connecting Wires

Theory:
Solar cell is the basic unit of solar energy generation system where electrical energy is
extracted directly from light energy without any intermediate process. The working of a solar
cell solely depends upon its photovoltaic effect, hence a solar cell also known as photovoltaic
cell. A solar cell is basically a semiconductor p-n junction device. It is formed by joining p- type
(high concentration of hole or deficiency of electron) and n-type (high concentration of electron)
semiconductor material. at the junction excess electrons from n-type try to diffuse to p-side and
vice-versa. Movement of electrons to the p-side exposes positive ion cores in n- side, while
movement of holes to the n-side exposes negative ion cores in the p-side. This results in an
electric field at the junction and forming the depletion region. When sunlight falls on the solar
cell, photons with energy greater than the band gap of the semiconductor are absorbed by the cell
and generate electron-hole (e-h) pairs. These e-h pairs migrate respectively to the n- and p- side
of the pn junction due to electrostatic force of the field across the junction. In this way a potential
difference is established between two sides of the cell. Typically a solar or photovoltaic cell has
negative front contact and positive back contact. A semiconductor p-n junction is in the middle

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of these two contacts like a battery. If these two sides are connected by an external circuit,
current will start flowing from positive to the negative terminal of the solar cell. This is the basic
working principle of a solar cell. For silicon, the band gap at room temperature is Eg = 1.1 eV
and the diffusion potential is UD = 0.5 to 0.7 V. Construction of a Si solar cell is depicted in
Fig.1.

Circuit Diagram:

Voltage Measurement:

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Tabulation:

S.No Distance (cm) Voltage (V)

Current Measurement:

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Tabulation:

Distance= 10m (Common)

S.No Resistance (cm) Current (uA)

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Procedure:
1. Rig up the circuit as per the circuit diagram.
2. maintain a known distance (first 5 cm, second 10 cm, third 15 cm) between bulb & the
Solar Cell
3. Vary the voltage in the power supply in steps note down the corresponding voltmeter &
ammeter readings.
4. Maintain the constant input voltage, By varying the distance, the corresponding Ammeter
readings are noted.

Result:

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 Department of Electronics and Communication Systems, KGCAS

Exp. No. 15 UJT AS OSCILLATOR

Aim:

To study and verify the UJT as relaxation oscillator circuit using UJT2N2646

Apparatus Required:

S.No. Name of the Components Range Quantity

1. UJT UJT 2N2646 1

2. Resistor 33Ω, 1KΩ, 0-10KΩ 3

3. Capacitor 0.1uF 1

4. CRO - 1

DC Regulated power
5. (0 – 30V), 2A Rating 1
supply

6. Breadboard, Connecting Wires

Operation:

An oscillator is a device that produces a waveform by its own, without any input. Though
some dc voltage is applied for the device to work, it will not produce any waveform as input. A
relaxation oscillator is a device that produces a non-sinusoidal waveform on its own. This
waveform depends generally upon the charging and discharging time constants of a capacitor in
the circuit.

The emitter of UJT is connected with a resistor and capacitor as shown. The RC time
constant determines the timings of the output waveform of the relaxation oscillator. Both the
bases are connected with a resistor each. The dc voltage supply VBB is given.

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Circuit Diagram:

Waveform:

Result:

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 Department of Electronics and Communication Systems, KGCAS

Exp. No. 16 STUDY OF IR (Tx & Rx)

Aim:

To study and verify the operation of IR (Tx & Rx)

Apparatus Required:

S.No. Name of the Components Range Quantity

1. IR Pair _ 1

2. Resistor 1KΩ 4

3. Transistor BC557 1

4. LED _ 1

DC Regulated power
5. (0 – 30V), 2A Rating 1
supply

6. Breadboard, Connecting Wires

IR:

IR Sensors or Infrared Sensor are light based sensors that are used in various applications
like Proximity and Object Detection. IR Sensors are used as proximity sensors in almost all
mobile phones. There are two types of Infrared or IR Sensors: Transmissive Type and Reflective
Type.

Procedure:

1. Connect the circuit as shown in the circuit diagram.

2. Switch ON the power supply.

3. View the output in the LED.

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Circuit Diagram:

Result:

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