SGP30N60 SGW30N60: Fast IGBT in NPT-technology
SGP30N60 SGW30N60: Fast IGBT in NPT-technology
SGP30N60 SGW30N60: Fast IGBT in NPT-technology
SGW30N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs G
• Designed for: E
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability PG-TO-220-3-1 PG-TO-247-3
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current IC A
TC = 25°C 41
TC = 100°C 30
Pulsed collector current, tp limited by Tjmax ICpuls 112
Turn off safe operating area - 112
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse EAS 165 mJ
IC = 30 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
Short circuit withstand time2 tSC 10 µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation Ptot 250 W
TC = 25°C
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, Ts 260
wavesoldering, 1.6mm (0.063 in.) from case for 10s
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.
80A 200µs
TC=80°C
1ms
60A
TC=110°C 1A
40A
Ic DC
20A
0A 0.1A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V
300W 60A
250W 50A
200W 40A
150W 30A
100W 20A
Ptot,
50W 10A
0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C
80A 80A
70A 70A
IC, COLLECTOR CURRENT
10A 10A
0A 0A
0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V
100A 4.0V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
90A
Tj=+25°C
3.5V
80A -55°C IC = 60A
+150°C
70A
IC, COLLECTOR CURRENT
3.0V
60A
40A
2.0V
30A
20A
1.5V
10A
0A 1.0V
0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 10V) saturation voltage as a function of junction
temperature
(VGE = 15V)
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns tf 100ns tf
td(on)
td(on) tr
tr
10ns 10ns
10A 20A 30A 40A 50A 60A 0Ω 10Ω 20Ω 30Ω 40Ω
1000ns
5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V
td(off)
4.5V
t, SWITCHING TIMES
4.0V max.
100ns
3.5V
tf
tr typ.
3.0V
td(on)
2.5V
min.
10ns 2.0V
0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C
5.0mJ 4.0mJ
*) Eon and Ets include losses Ets* *) Eon and Ets include losses
4.5mJ due to diode recovery. due to diode recovery.
3.5mJ
4.0mJ
E, SWITCHING ENERGY LOSSES
2.0mJ Eoff
1.5mJ Eoff
1.5mJ Eon*
1.0mJ
1.0mJ
0.5mJ
0.5mJ
0.0mJ 0.0mJ
10A 20A 30A 40A 50A 60A 70A 0Ω 10Ω 20Ω 30Ω 40Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V, (inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω, VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)
3.0mJ 0
10 K/W
2.5mJ
0.2
E, SWITCHING ENERGY LOSSES
-1
10 K/W
0.1
2.0mJ
Ets* 0.05
0.02
-2
1.5mJ 10 K/W
R,(1/W) τ, (s)
0.01 0.3681 0.0555
1.0mJ Eon* 0.0938 1.26*10
-3
-4
0.0380 1.49*10
Eoff -3
10 K/W
R1 R2
0.5mJ
single pulse
C 1=τ1/R 1 C 2= τ2/R 2
-4
0.0mJ 10 K/W
0°C 50°C 100°C 150°C 1µs 10µs 100µs 1ms 10ms 100ms 1s
Ciss
20V 120V 1nF
VGE, GATE-EMITTER VOLTAGE
480V
C, CAPACITANCE
15V
Coss
10V 100pF
Crss
5V
0V 10pF
0nC 50nC 100nC 150nC 200nC 0V 10V 20V 30V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a
(IC = 30A) function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25 µ s 500A
450A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
20 µ s
tsc, SHORT CIRCUIT WITHSTAND TIME
400A
350A
15 µ s 300A
250A
10 µ s 200A
150A
5µ s 100A
50A
0µ s 0A
10V 11V 12V 13V 14V 15V 10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C) (VCE ≤ 600V, Tj = 150°C)
p(t)
r1 r2 rn
TC
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