GATE-2023

Electronics Engineering

Electronic Devices & Circuits

Chapterwise & Topicwise

Contents
S.No. Topic Page No.

1. Basic Semiconductor Physics .......................................................................................................... 1-17

2. PN-Junction Diodes and Special Diodes .................................................................................. 18-38

3. BJT and FET Basics ............................................................................................................................ 39-55

 1 Basic Semiconductor Physics

Q.1 Consider two energy levels: E1, E ev above the Q.5 Due to illumination by light, the electron and
Fermi level and E2, E ev below the Fermi level. P1 hole concentrations in a heavily doped N type
and P2 are respectively the probability of E1 semiconductor increases by n and p
being occupied by an electron and E2 being respectively if ni is the intrinsic concentration
empty. Then, then,
(a) P1 > P2 (a) n< p (b) n> p
(b) P1 = P2
(c) n= p (d) n × p = ni2
(c) P1 < P2
(d) P1 and P2 depend on number of free electrons [EC-1989 : 2 Marks]

[EC-1987 : 2 Marks] Q.6 The concentration of ionized acceptors and

donors in a semiconductor are N A , N D
Q.2 In an intrinsic semiconductor the free electron
respectively. If NA > ND and ni is the intrinsic
concentration depends on
concentration, the position of the Fermi level
(a) effective mass of electrons only
with respect to the intrinsic level depends on
(b) effective mass of holes only
(a) NA – ND (b) NA + ND
(c) temperature of the semiconductor
N A ND
(d) width of the forbidden energy band of the (c) (d) ni
ni2
semiconductor
[EC-1987 : 2 Marks] [EC-1989 : 2 Marks]

Q.3 According to the Einstein relation, for any Q.7 Under high electric fields, in a semiconductor
semiconductor the ratio of diffusion constant to with increasing electric field,
mobility of carriers (a) the mobility of charge carriers decreases.
(a) depends upon the temperature of the (b) the mobility of charge carriers increases.
semiconductor. (c) the velocity of the charge carriers saturates.
(b) depends upon the type of the semiconductor. (d) the velocity of the charge carriers increases.
(c) varies with life time of the semiconductor. [EC-1990 : 2 Marks]
(d) is a universal constant.
Q.8 A silicon sample is uniformly doped with 1016
[EC-1987 : 2 Marks] phosphorus atoms/cm3 and 2 × 1016 boron
Q.4 Direct band gap semiconductors atoms/cm3. If all the dopants are fully ionized,
(a) exhibit short carrier life time and they are the material is
used for fabricating BJT’s. (a) n-type with carrier concentration of
(b) exhibit long carrier life time and they are 1016/cm3.
used for fabricating BJT’s. (b) p-type with carrier concentration of
(c) exhibit short carrier life time and they are 1016/cm3.
used for fabricating lasers. (c) p-type with carrier of 2 × 1016/cm3.
(d) exhibit long carrier life time and they are (d) n-type with a carrier concentration of
used for fabricating lasers. 2 × 1016/cm3.
[EC-1987 : 2 Marks] [EC-1991 : 2 Marks]
 2 Electronics Engineering Electronic Devices & Circuits

Q.9 A semiconductor is irradiated with light such Q.14 A small concentration of minority carries is
that carriers are uniformly generated throughout injected into a homogeneous semiconductor
its volume. The semiconductor is n-type with crystal at one point. An electric field of 10 V/cm
N D = 10 19 /cm 3 . If the excess electron is applied across the crystal and this moves the
concentration in the steady-state is minority carries a distance of 1 cm in 20 µsec.
n = 1016/cm3 and if p = 10 µsec. (minority The mobility (in cm2/V-sec) will be
carriers life time) the generation rate due to (a) 1,000 (b) 2,000
irradiation (c) 5,000 (d) 500,000
(a) is 1020 e-h pairs/cm3/s. [EC-1995 : 1 Mark]
(b) is 1024 e-h pairs/cm3/s.
Q.15 The units of q/KT are
(c) is 1010 e-h pairs/cm3/s.
(a) V (b) V–1
(d) cannot be determined, the given data is
(c) J (d) J/K
insufficient.
[EC-1997 : 1 Mark]
[EC-1992 : 2 Marks]
Q.16 The intrinsic carrier density at 300 K is
Q.10 A p-type silicon sample has a higher
1.5 × 1010/cm3, in silicon for n-type doped to
conductivity compared to an n-type silicon
2.25 × 1015 atoms/cm3, the equilibrium electron
sample having the same dopant concentration.
and hole densities are
(True/False)
(a) n = 1.5 × 1015, p = 1.5 × 1010/cm3
[EC-1994 : 1 Mark]
(b) n = 1.5 × 1010, p = 2.25 × 1015/cm3
Q.11 The drift velocity of electrons, in silicon (c) n = 2.25 × 1015, p = 1.0 × 105/cm3
(a) is proportional to the electric field for all
(d) n = 1.5 × 1010, p = 1.5 × 1010/cm3
values of electric field.
[EC-1997 : 2 Marks]
(b) is independent of the electric field.
(c) increases at low values of electric field and Q.17 The electron concentration in a sample of non-
decreases at high values of electric field uniformly doped n-type silicon at 300 K varies
exhibiting negative differential resistance. linearly from 1017/cm3 at x = 0 to 6 × 1016/cm3
(d) increases linearly with electric field at low at x = 2 µm. Assume a situation that electrons
values of electric field and gradually are supplied to keep this concentration gradient
saturates at higher values of electric field. constant with time. If electronic charge is
[EC-1995 : 1 Mark] 1.6 × 10–19 Coulomb and the diffusion constant
Dn = 35 cm2/s, the current density in the silicon,
Q.12 The probability that an electron in a metal
if no electric field is present is
occupies the Fermi level, at any temperature.
(a) zero (b) 120 A/cm2
(T > 0 K)
(c) +1120 A/cm2 (d) –1120 A/cm2
(a) 0 (b) 1
(c) 0.5 (d) 1.0 [EC-1997 : 2 Marks]
[EC-1995 : 1 Mark] Q.18 An n-type silicon bar 0.1 cm long and 100 µm2
in cross-sectional area has a majority carrier
Q.13 In a p-type Si simple the hole concentration is
concentration of 5 × 1020/m3 and the carrier
2.25 × 10 15 /cm 3 . The intrinsic carrier
mobility is 0.13 m2/V-s at 300 K. If the charge of
concentration is 1.5 × 1010/cm3 the electron
an electron is 1.6 × 10–19 Coulomb, then the
concentration is
resistance of the bar is
(a) zero (b) 1010/cm3
(a) 106 (b) 104
(c) 105/cm3 (d) 1.5 × 1025/cm3 –1
(c) 10 (d) 10–4
[EC-1995 : 1 Mark] [EC-1997 : 2 Marks]
 GATE Previous Years Solved Paper 3

Q.19 The unit of q/KT are Q.26 The neutral base width of a bipolar transistor,
(a) V (b) V–1 biased in the active region, is 0.5 µm. The
(c) J (d) J/K maximum electron concentration and the
[EC-1998 : 1 Mark] diffusion constant in the base are 1014/cm3 and
Dn = 125 cm 2/sec respectively. Assuming
Q.20 n-type silicon is obtained by doping silicon with negligible recombination in the base, the collector
(a) Germanium (b) Aluminium current density is (the electron charge is
(c) Boron (d) Phosphorus 1.6 × 10–19 Coulomb)
[EC-2003 : 1 Mark] (a) 800 A/cm2 (b) 8 A/cm2

Q.21 The band gap of silicon at 300 K is (c) 200 A/cm2 (d) 2 A/cm2

(a) 1.36 eV (b) 1.10 eV [EC-2004 : 2 Marks]

(c) 0.80 eV (d) 0.67 eV Q.27 The bandgap of silicon at room temperature is
[EC-2003 : 1 Mark] (a) 1.3 eV (b) 0.7 eV
Q.22 The intrinsic carrier concentration of silicon (c) 1.1 eV (d) 1.4 eV
sample at 300 K is 1.5 × 1016/m3. If after doping, [EC-2005 : 1 Mark]
the number of majority carriers is 5 × 1020/m3,
Q.28 The primary reason for the widespread use of
the minority carrier density is
silicon in semiconductor device technology is
(a) 4.50 × 1011/m3 (b) 3.33 × 104/m3
(a) abundance of silicon on the surface of the
(c) 5.00 × 1020/m3 (d) 3.00 × 10–5/m3 Earth.
[EC-2003 : 1 Mark] (b) larger bandgap of silicon in comparison to
Q.23 The impurity commonly used for realizing the Germanium.
base region of a silicon n-p-n transistor is (c) favorable properties of silicon-dioxide
(a) Gallium (b) Indium (SiO2).
(c) Boron (d) Phosphorus (d) lower melting point.
[EC-2004 : 1 Mark] [EC-2005 : 1 Mark]

Q.24 The resistivity of a uniformly doped n-type Q.29 A silicon sample A is doped with 1018 atoms/
silicon sample is 0.5 -cm. If the electron cm3 of Boron. Another sample B of identical
mobility (µn) is 1250 cm2/V-sec and the charge dimensions is doped with 1018 atoms/cm3 of
of an electron is 1.6 × 10–19 Coulomb, the donor phosphorus. The ratio of electron to hole
impurity concentration (ND) in the sample is mobility is 3. The ratio of conductivity of the
(a) 2 × 1016/cm3 (b) 1 × 1016/cm3 sample A to B is
(c) 2.5 × 1015/cm3 (d) 2 × 1015/cm3 1
(a) 3 (b)
[EC-2004 : 2 Marks] 3

Q.25 The longest wavelength that can be absorbed 2 3

(c) (d)
by silicon, which has the bandgap of 1.12 eV, is 3 2
1.1 µm. If the longest wavelength that can be [EC-2005 : 2 Marks]
absorbed by another material is 0.87 µm, then
Q.30 The concentration of minority carriers in an
the bandgap of this material is
extrinsic semiconductor under equilibrium is
(a) 1.416 eV (b) 0.886 eV
(a) directly proportional to the doping
(c) 0.854 eV (d) 0.706 eV concentration.
[EC-2004 : 2 Marks]
 4 Electronics Engineering Electronic Devices & Circuits

(b) inversely proportional to the doping (a) ni (b) ni + NA

concentration.
ni2
(c) directly proportional to the intrinsic (c) NA – ni (d)
NA
concentration.
[EC-2007 : 1 Mark]
(d) inversely proportional to the intrinsic
concentration. Q.35 Which of the following is true?
[EC-2006 : 1 Mark] (a) A silicon wafer heavily doped with boron
is a p+ substrate.
Q.31 Under low level injection assumption, the
(b) A silicon wafer light doped with boron is a
injected minority carrier current for an extrinsic
p+ substrate.
semiconductor is essentially the
(a) diffusion current (c) A silicon wafer heavily doped with arsenic
is a p+ substrate.
(b) drift current
(d) A silicon wafer lightly doped with arsenic
(c) recombination current
is a p+ substrate.
(d) induced current
[EC-2008 : 1 Mark]
[EC-2006 : 1 Mark]
Q.36 Silicon is doped with boron to a concentration
Q.32 The majority carriers in an n-type semiconductor
of 4 × 1017 atoms/cm3. Assume the intrinsic
have an average drift velocity ‘v’ in a direction
carrier concentration of silicon to be
perpendicular to a uniform magnetic field B. The
1.5 × 1010/cm3 and the value of kT/q to be 25 mV
electric field E induced due to hall effect acts in
at 300 K. Compared to undoped silicon, the
the direction
Fermi level of doped silicon
(a) v × B (b) B × v
(a) goes down by 0.13 eV
(c) along v (d) opposite to v
(b) goes up by 0.13 eV
[EC-2006 : 2 Marks]
(c) goes down by 0.427 eV
Q.33 A heavily doped n-type semiconductor has the (d) goes up by 0.427 eV
following data: [EC-2008 : 2 Marks]
Hole-electron mobility ratio : 0.4
Doping concentration : 4.2 × 108 atoms/m3 Q.37 In an n-type silicon crystal at room temperature
Intrinsic concentration : 1.5 × 104 atoms/m3 which of the following can have a concentration
The ratio of conductance of the n-type of 4 × 1019 cm–3 ?
semiconductor to that of the intrinsic (a) Silicon atoms (b) Holes
semiconductor of same material and at the same (c) Dopant atoms (d) Valence electrons
temperature is given by [EC-2009 : 1 Mark]
(a) 0.00005 (b) 2.000
Q.38 The ratio of the mobility to the diffusion
(c) 10.000 (d) 20.000 coefficient in a semiconductor has the unity
[EC-2006 : 2 Marks] (a) V–1 (b) cm V–1
Q.34 The electron and hole concentrations in an (c) V cm–1 (d) V s
intrinsic semiconductor are ni per cm3 at 300 K. [EC-2009 : 1 Mark]
Now, if acceptor impurities are introduced with
Linked Answer Questions (39 and 40):
a concentration of NA per cm3 (where NA >> ni)
The silicon sample with unit cross-sectional areas
the electron concentration per cm3 at 300 K
shown below is in thermal equilibrium. The following
will be
information is given:
 GATE Previous Years Solved Paper 5

T = 300 K, electronic charge = 1.6 × 10–19 C, thermal Q.43 A silicon bar is doped with donor impurities
voltage = 26 mV and electron mobility = 1350 cm2/V-s. ND = 2.25 × 1015 atoms/cm3. Given the intrinsic
carrier concentration of silicon at T = 300 K is
n i = 1.5 × 10 10 cm –3 . Assuming complete
1V
impurity ionization, the equilibrium electron
16 3
ND = 10 /cm and hole concentrations are:
(a) n0 = 1.5 × 1016 cm–3, p0 = 1.5 × 105 cm–3
x=0 x = 1 µm (b) n0 = 1.5 × 1010 cm–3, p0 = 1.5 × 1015 cm–3
(c) n0 = 2.25 × 1015 cm–3, p0 = 1.5 × 1010 cm–3
Q.39 The magnitude of the electric field at x = 0.5 µm
is (d) n0 = 2.25 × 1015 cm–3, p0 = 1 × 105 cm–3

(a) 1 kV/cm (b) 5 kV/cm [EC-2014 : 1 Mark]

(c) 10 kV/cm (d) 26 kV/cm Q.44 Assume electronic charge q = 1.6 × 10–19 C,
[EC-2010 : 2 Marks] kT/q = 25 mV and electron mobility
µn = 1000 cm2/V-s. If the concentration gradient
Q.40 The magnitude of the electron drift current
of electrons injected into a p-type silicon sample
density at x = 0.5 µm is
is 1 × 1021 cm–3, the magnitude of electron
(a) 2.16 × 104 A/cm2
diffusion current density (in A/cm2) is ____ .
(b) 1.08 × 104 A/cm2
[EC-2014 : 2 Marks]
(c) 4.32 × 103 A/cm2
(d) 6.48 × 102 A/cm2 Q.45 When a silicon diode having a doping
[EC-2010 : 2 Marks] concentration of NA = 9 × 1016 cm–3 on p-side
and ND = 1 × 1016 cm–3 on n-side is reverse
Q.41 Drift current in semiconductors depends upon
biased, the total depletion width is found to be
(a) only the electric field.
3 µm. Given that the permittivity of silicon is
(b) only the carrier concentration gradient. 1.04 × 10–12 F/cm, the depletion width on the
(c) both the electric field and the carrier p-side and the maximum electric field in the
concentration. depletion region, respectively, are
(d) both the electric field and the carrier (a) 2.7 µm and 2.3 × 105 V/cm
concentration gradient.
(b) 0.3 µm and 4.15 × 105 V/cm
[EC-2011 : 1 Mark]
(c) 0.3 µm and 0.42 × 105 V/cm
Q.42 The doping concentrations on the p-side and (d) 2.1 µm and 0.42 × 105 V/cm
n-side of a silicon diode are 1 × 1016 cm–3 and [EC-2014 : 2 Marks]
1 × 1017 cm–3, respectively. A forward bias of
0.3 V is applied to the diode. At T = 300 K, the Q.46 A thin p-type silicon sample is uniformly
intrinsic carrier concentration of silicon illuminated will light which generates excess
carriers. The recombination rate is directly
kT proportional to
n i = 1.5 × 10 10 cm –3 and = 26 mV. The
q
(a) the minority carrier mobility.
electron concentration at the edge of the (b) the minority carrier recombination lifetime.
depletion region on the p-side is (c) the majority carrier concentration.
(a) 2.3 × 109 cm–3 (b) 1 × 1016 cm–3 (d) the excess minority carrier concentration.
(c) 1 × 1017 cm–3 (d) 2.25 × 106 cm–3 [EC-2014 : 1 Mark]
[EC-2014 : 2 Marks]
 6 Electronics Engineering Electronic Devices & Circuits

Q.47 At T = 300 K, the hole mobility of a Q.51 Consider a silicon sample doped with
semiconductor µ p = 500 cm/V-s and ND = 1 × 1015/cm3 donor atoms. Assume that
the intrinsic carrier concentration
kT
= 26 mV. The hole diffusion constant Dp in ni = 1.5 × 1010/cm3. If the sample is additionally
q
doped with NA = 1 × 1018/cm3 acceptor atoms,
cm2/s is ______ .
the approximate number of electrons/cm3 in the
[EC-2014 : 1 Mark]
sample, at T = 300 K, will be ______ .
Q.48 A T = 300 K, the bandgap and the intrinsic [EC-2014 : 2 Marks]
carrier concentration of GaAs are 1.42 eV and
106 cm–3, respectively. In order to generate Q.52 An N-type semiconductor having uniform
electron hole pairs in GaAs, which one of the doping is biased as shown in the figure.
wavelength ( C) ranges of incident radiation, is
most suitable? (Given that: Plank’s constant is V
6.62 × 10–34 J-s, velocity of light is 3 × 1010 cm/s
and charge of electron is 1.6 × 10–19 C) N-type semiconductor

(a) 0.42 µm < C < 0.87 µm

If EC is the lowest energy level of the conduction
(b) 0.87 µm < C < 1.42 µm
band, EV is the highest energy level of the
(c) 1.42 µm < C < 1.62 µm valance band and EF is the Fermi level, which
(d) 1.62 µm < C < 6.62 µm one of the following represents the energy band
[EC-2014 : 1 Mark] diagram for the biased N-type semiconductor?
Q.49 In the figure, in ( i) is plotted as a function of EC EC
1/T, where i is the intrinsic resistivity of EF
(a) (b) EF
silicon, T is the temperature, and the plot is
almost linear. EV EV

ln ( i) EC
EF
EC
(c) EV (d)
EF

EV
[EC-2014 : 2 Marks]
1/T

The slope of the line can be used to estimate Q.53 A silicon sample is uniformly doped with donor
(a) bandgap energy of silicon (Eg). type impurities with a concentration of
(b) sum of electron and hole mobility in silicon 1016/cm3. The electron and hole mobilities in
(µn + µp). the sample are 1200 cm2/V-s and 400 cm2/V-s
(c) reciprocal of the sum of electron and hole respectively. Assume complete ionization of
mobility in silicon (µn + µp)–1. impurities. The charge of an electron is
(d) intrinsic carrier concentration of silicon (ni). 1.6 × 10 –19 C. The resistivity of the sample
(in -cm) is ________ .
[EC-2014 : 1 Mark]
[EC-2015 : 1 Mark]
Q.50 The cut-off wavelength (in µm) of light that can
be used for intrinsic excitation of a Q.54 A piece of silicon is doped uniformly with
semiconductor material of bandgap, Eg = 1.1 eV phosphorous with a doping concentration of
is _______ . 1016/cm3. The expected value of mobility versus
[EC-2014 : 1 Mark] doping versus doping concentration for silicon
 GATE Previous Years Solved Paper 7

assuming full dopant ionization is shown (a) –4.4 × 10–2 (b) –2.2 × 10–2
below. The charge of an electron is 1.6 × 10–19 C. (c) 0 (d) 2.2 × 10–2
The conductivity (in S cm –1) of the silicon [EC-2015 : 2 Marks]
sample at 300 k is ______ .
Q.57 A dc voltage of 10 V is applied across an n-type
Hole and Electron Mobility in Silicon at 300 K
silicon bar having a rectangular cross-section
1400
Electron Hole and length of 1 cm as shown in figure. The donor
1200
doping concentration ND and the mobility of
s )
–1

1000
–1

electrons µn are 1016 cm–3 and 1000 cm–2 V–1 s–1,

V

800
2

respectively. The average time (in µs) taken by

Mobility (cm

600

400
the electrons to move from one end of the bar to
200
other end is _______ .

1.E + 13 1.E + 14 1.E + 15 1.E + 16 1.E + 17 1.E + 18 1.E + 19 1.E + 20

Doping concentration (cm–3 )
10 V

[EC-2015 : 1 Mark] n-Si

1 cm
Q.55 An n-type silicon sample is uniformly
illuminated with light which generates 10 20 [EC-2015 : 2 Marks]
electron-hole pairs per cm3 per second. The Q.58 A small percentage of impurity is added to an
minority carrier lifetime in the sample is 1 µs. In intrinsic semiconductor at 300 K. Which one of
the steady-state, the hole concentration in the the following statements is true for the energy
sample is approximately 10x, where x is an band diagram shown in the following figure?
integer. The value of x is _______ .
[EC-2015 : 1 Mark] Conduction band
EC
Q.56 The energy band diagram and the electron
0.01 eV
density profile n(x) in a semiconductor are
New energy level
shown in the figures.
EV
q x Valence band
Assume that, n( x ) = 1015 e kT cm –3, with
(a) Intrinsic semiconductor doped with
= 0.1 V/cm and x expressed in cm. Given pentavalent atoms to form n-type
D kT semiconductor.
kT
= 0.026 V, Dn = 36 cm2 s–1 and = .
q µ q (b) Intrinsic semiconductor doped with
trivalent atoms to form n-type
The electron current density (in A/cm2) at x = 0 semiconductor.
is
(c) Intrinsic semiconductor doped with
E(eV) log( n(x)) pentavalent atoms to form p-type
semiconductor.
Slope = –0.1 eV/cm
(d) Intrinsic semiconductor doped with
trivalent atoms to form p-type
EC semiconductor.

EV
[EC-2016 : 1 Mark]
x=0 x x=0 x
 8 Electronics Engineering Electronic Devices & Circuits

Q.59 The figure below shows the doping distribution (c) Silicon atoms acts as p-type dopants in
in a p-type semiconductor in log scale. Arsenic as well as Gallium sites.
(d) Silicon atoms acts as n-type dopants in
Arsenic as well as Gallium sites.
16
–3
10 [EC-2017 : 1 Mark]
NA (cm )
14
10 Q.62 As shown, a uniformly doped Silicon (Si) bar of
1 2
length L = 0.1 µm with a donor concentration
Position (µm) ND = 1016 cm–3 is illuminated at x = 0 such that
The magnitude of the electric field (in kV/cm) electron and hole pairs are generated at the rate of
in the semiconductor due to non-uniform x
doping is _______ . GL0 1 , 0 x L
L
[EC-2016 : 2 Marks]
where GL 0 = 1017 cm 3
s 1 . Hole lifetime is
Q.60 Consider a silicon sample at T = 300 K, with a
uniform donor density Nd = 5 × 10 16 cm–3, 10–4 s, electronic charge q = 1.6 × 10–19 C, hole
illuminated uniformly such that the optical diffusion coefficient Dp = 100 cm2/s and low
generation rate is Gopt = 1.5 × 1020 cm–3 s–1 level injection condition prevails. Assuming a
throughout the sample. The incident radiation linearly decaying steady-state excess hole
is turned-off at t = 0. Assume low-level injection concentration that goes to 0 at x = L, the
to be valid and ignore surface effects. The carrier magnitude of the diffusion current density at
lifetimes are p0 = 0.1 µs and n0 = 0.5 µs . x = L/2, (in A/cm2), is _______ .
Light
16 –3
Si (ND = 10 cm )

x=0 L = 0.1 µm
n-type Si
[EC-2017 : 2 Marks]

The hold concentration at t = 0 and the hole Q.63 The dependence of drift velocity of electrons on
concentration at t = 0.3 µs, respectively are electric field in a semiconductor is shown below.
(a) 1.5 × 1013 cm–3 and 7.47 × 1011 cm–3 The semiconductor has a uniform electron
(b) 1.5 × 1013 cm–3 and 8.23 × 1011 cm–3 concentration of n = 1 × 1016 cm–3 and electronic
(c) 7.5 × 1013 cm–3 and 3.73 × 1011 cm–3 charge q = 1.6 × 10–19 C. If a bias of 5 V is applied
(d) 7.5 × 1013 cm–3 and 4.12 × 1011 cm–3 across a 1 µm region of this semiconductor, the
[EC-2016 : 2 Marks] resulting current density in this region,
(in kA/cm2), is _______ .
Q.61 A bar of Gallium Arsenide (GaAs) is doped with
Drift velocity (cm/s)
Silicon such that the Silicon atoms occupy
Gallium and Arsenic sites in the GaAs crystal. Constant
7
Which one of the following statements is true? 10

(a) Silicon atoms acts as p-type dopants in

r a
ne

Arsenic sites and n-type dopants in Gallium

Li

sites.
(b) Silicon atoms acts as n-type dopants in 0 5 × 10
5
Electric field (V/cm)
Arsenic sites and p-type dopants in Gallium
sites. [EC-2017 : 2 Marks]
 GATE Previous Years Solved Paper 9

Q.64 A single crystal intrinsic semiconductor is at a respectively. The left side of the bar (x = 0) is
temperature of 300 K with effective density of uniformly illuminated with a laser having
states for holes twice that of electrons. The photon energy greater than the bandgap of the
thermal voltage is 26 mV. The intrinsic Fermi semiconductor. Excess electron hole pairs are
level is shifted from mid-bandgap energy generated only at x = 0 because of the laser. The
level by steady-state electron density at x = 0 is 1014 cm–3
(a) 13.45 meV (b) 18.02 meV due to laser illumination. Under these
conditions and ignoring electric field, the closest
(c) 26.90 meV (d) 9.01 meV
approximation (among the given options) of the
[EC-2020 : 1 Mark]
steady-state electron density at x = 2 µm, is
Q.65 A bar of silicon is doped with boron _________ .
concentration of 1016 cm–3 and assumed to be (a) 0.37 × 1014 cm–3 (b) 0.63 × 1013 cm–3
fully ionized. It is exposed to light such that (c) 3.7 × 1014 cm–3 (d) 103 cm–3
electron hole pairs are generated throughout the [EC-2022]
volume of the bar at the rate of 1020 cm–3 s–1. If
Q.67 Select the correct statement(s) regarding
the recombination lifetime is 100 µs, intrinsic
semiconductor devices:
carrier concentration of silicon is 1010 cm–3 and
assuming 100% ionization of boron, then the (a) Electrons and holes are of equal density in
approximate product of steady-state electron an intrinsic semiconductor at equilibrium.
and hole concentrations due to this light (b) Collector region is generally more heavily
exposure is, doped than base region in a BJT.
(a) 1032 cm–6 (b) 2 × 1020 cm–6 (c) Total current is spatially constant in a two
(c) 2× 1032 cm–6 (d) 1020 cm–6 terminal electronic device in dark under
steady-state condition.
[EC-2021 : 1 Mark]
(d) Mobility of electrons always increases with
Q.66 Consider a long rectangular bar of direct temperature in silicon beyond 300 K.
bandgap p-type semiconductor. The equilibrium
[EC-2022]
hole density is 1017 cm–3 and the intrinsic carrier
concentration is 1010 cm–3. Electron and hole
diffusion lengths are 2 µm and 1 µm,
10 Electronics Engineering Electronic Devices & Circuits

Answers Basic Semiconductor Physics

1. (b) 2. (c) 3. (a) 4. (c) 5. (c) 6. (a) 7. (a, c) 8. (b)

9. (a) 10. (False) 11. (d) 12. (c) 13. (c) 14. (c) 15. (b) 16. (c)

17. (d) 18. (a) 19. (b) 20. (d) 21. (b) 22. (a) 23. (c) 24. (b)

25. (a) 26. (b) 27. (c) 28. (a) 29. (b) 30. (b) 31. (a) 32. (b)

33. (d) 34. (d) 35. (a) 36. (c) 37. (c) 38. (a) 39. (c) 40. (a)

41. (c) 42. (a) 43. (d) 44. (4000) 45. (b) 46. (d) 47. (13) 48. (a)

49. (a) 50. (1.12) 51. (225.2) 52. (d) 53. (0.52) 54. (1.92) 55. (14) 56. (c)

57. (100) 58. (a) 59. (1.198) 60. (a) 61. (a) 62. (16) 63. (1.6) 64. (d)
65. (c) 66. (a) 67. (a, c)

Solutions Basic Semiconductor Physics

2. (c) µ = Mobility
By mass action law, Dn = Electron diffusion constant
Dp = Hole diffusion constant
n p = ni2
µn = Electron mobility
ni = intrinsic carrier concentration
µp = Hole mobility
p = hole concentration
n = electron concentration 4. (c)

ni2 T3 DBG (Direct Band Gap) semiconductors exhibit

short carrier life time they are used for
ni T3/2
fabricating lasers.
For intrinsic semiconductor,
In DBG semiconductor during the
n = p = ni
recombination the energy is released in the form
n T3/2
of light.
3. (a)
5. (c)
We know that,
n= p
Einstein equation
Due to illumination by light EHP (electron-hole
D Dn Dp T (°K ) pair) generation occurs.
= = = VT =
µ µn µp 11600 So, n= p
where,
where,
n = increase in electron concentration due
T = Temperature in °K to illumination by light
VT = Thermal voltage p = increase in hole concentration due to
D = Diffusion constant illumination by light
 GATE Previous Years Solved Paper 11

7. (a, c) 10. Sol.

(False)
µ
The given statement is false, because for a given
µ E
–1/2 semiconductor the electron mobility (µn) is
always higher than the hole mobility (µp).
µn > µp (for a given semiconductor) we know
µ 1/E
that, the conductivity of a given n-type
semiconductor,
n = nqµn
3 4 7
10 10 10 E(V/m)
the conductivity of a given p-type
v d = µE semiconductor,
where,
p = pqµp
v d = Drift velocity Given that, n = p
µ = Mobility = same dopant concentration
E = Applied electric field q = 1.602 × 10–19 Col.
For high electric field, with increasing electric So, n > p
field:
1. The mobility of charge carriers decreases 11. (d)
as electric field increases, v d = µE
1 where,
µ v d = Drift velocity
E
µ = Mobility
2. The velocity (drift velocity) of charge
E = Applied electric field
carriers saturates.
µ
8. (b)
–1/2
p-type with carrier concentration of 1016/cm3. µ E
Given that,
ND = n = phosphorus atoms = 1016/cm3 µ 1/E
NA = p = Boron atoms = 2 × 1016/cm3
Q NA >> ND
3 4 7
So, the resultant material will be p-type 10 10 10 E(V/m)
semiconductor carrier concentration
1. For smaller electric field applied, mobility
= NA – ND
of change carrier will remain almost
= 2 × 1016 – 1016
constant. So for smaller field applied, drift
= 1016/cm3
velocity (vd) increases linearly with electric
9. (a) field.
1020 e-h pairs/cm3/s 2. For large electric field applied, mobility of
Given that, n = 1015/cm3 charge carrier will be very small, so the drift
velocity gradually saturates at higher
p = 10 µ-sec = 10 × 10 sec.
–6

values of electric field.

P 1015
Generation rate = =
p 10 × 10 6 13. (c)

= 1020 e-h pairs/cm3/s By Mass Action Law:

n p = ni2
12 Electronics Engineering Electronic Devices & Circuits

where, By Mass Action Law:

n = electron concentration n p = ni2
p = hole concentration
ni = intrinsic carrier concentration ni2 (1.5 × 10 10 )2
P= = = 105 atoms/cm3
p = 2.25 × 1015/cm3 n 2.25 × 10 15
ni = 1.5 × 1010/cm3 17. (d)
ni2 (1.5 × 1010 )2 dn
n= = Jn = nq µn E + Dn q
p 2.25 × 1015 dx
Given, E=0
2.25 × 10 20 5 3
= = 10 /cm dn
2.25 × 10 15 Jn = Dn q
dx
14. (c) dn 6 × 10 16 1017
= 4
= 2 × 10 20
Distance dx 2 × 10 0
Velocity =
Time Jn = (35) (1.6 × 10–19) (–2 × 1020)
= –1120 A/cm2
1
vd = 6
20 × 10 18. (a)
= 50,000 cm/sec Given that, l = 0.1 cm = 10–3 m
Drift velocity = vd = µE A = 100 µm2 = 100 × 10–12 m2
where, n = 5 × 1020/m3
n = Mobility µn = 0.13 m2/V-sec
E = Electric field q = 1.6 × 10–19 Col.
vd 50, 000 We know that,
µ= = = 5,000 cm3/volt-sec
E 10 Conductivity = = nqµn
1
15. (b) Resistivity = =
Thermal voltage or volt-equivalent of l l
temperature, Resistance = =
A A
3
KT R=
10
= 106
VT = = Volts (5 × 10 20
) × (1.6 × 10 19
) (0.13) (100 × 10 12
)
q

q 19. (b)
So, V–1
KT KT
Thermal voltage = VT =
q
16. (c)
q
n = 2.25 × 1015 So, V 1
KT
p = 1.0 × 105/cm3
For n-type semiconductor, 22. (a)
Electron density = n = ND
ni2 = np
= 2.25 × 1015 atoms/cm3
Given that, intrinsic carrier concentration = ni ni = Intrinsic concentration
= 1.5 × 10/cm3 ni2 1.5 × 10 16 × 1.5 × 10 16
p = =
Q n>>ni n 5 × 10 20
= 45 × 1010 = 4.5 × 1011/cm3
 GATE Previous Years Solved Paper 13

24. (b) 33. (d)

1 For n-type semiconductor n = nqµn
= For intrinsic semiconductor,
nq µ n
n = ND i = ni q(µn + µp)

n nµn
1 1 =
ND = = 19 i ni (µn + µ p )
q µn p 1.6 × 10 × 1250 × 0.5
= 1016/cm3 4.2 × 108 × µn
=
µp
25. (a) 1.5 × 10 4 × µn 1 +
µn
1.24
Eg = eV
(µm) 4.2 × 108
= 4
= 2 × 10 4
1.5 × 10 × 1.4
1.24
= eV = 1.425 eV
0.87 µm 34. (d)
By the law of electrical neutrality,
26. (b)
p + ND = n + NA
dn As, ND = 0
JC = qDn
dx NA >> ni 0,
19 10 14 p = NA
= 1.6 × 10 × 25 ×
0.5 × 10 4 Using mass action law,
JC = 8 A/cm2 np = ni2
29. (b) ni2 n2
So, n= = i
n = nqµn p NA
p µp 1
= = 36. (c)
n µn 3
Since, boron is p-type impurity, therefore, Fermi-
30. (b) level goes down.
2 NA
np = ni Ei – Ef = kT ln
ni
ni = constant
For n-type ‘p’ is minority carrier concentration, 3 4 × 1017
= 25 × 10 ln
1.5 × 1010
ni2
p = = 0.427 eV
n
1 37. (c)
p
n In an N-type silicon crystal at room temperature,
n Nd
32. (b) and by mass action law,
Hall effect:
n p = ni2
Electric force + magnetic force = 0
qE + qv + B = 0 (1.5 × 10)2
p = = 5.625 cm 3
E = –v × B 4 × 1019
E = B×v and n>>p
14 Electronics Engineering Electronic Devices & Circuits

38. (a) 43. (d)

D Since, ND >> ni therefore equilibrium electron
= VT concentration is,
µ
n ND = 2.25 × 105 cm–3
µ 1
= units : V–1 and equilibrium hole concentration is given by
D VT
mass action law,
39. (c) ni2 (1.5 × 1010 )2
p= = = 1 × 105 cm–3
The sample is in thermal equilibrium. ND 2.25 × 1015
V 1
So, E= = 44. Sol.
d 1 × 10 6
= 106 V/m = 10 kV/cm dn
J = qDn
dx
40. (a) where, Dn = µnVT
J= E,
1000 cm 2
= nqµn = ND qµn Dn = × 25 × 10 3 V
Vs
J= ND qµnE
Dn = 25 cm2/s
J= 1016 × (1.6 × 10–19) (1350) (10 × 103)
then, J = 1.6 × 10–19 × 25 × 1 × 1021
J= 2.16 × 104 A/cm2
J = 4000 A/cm2
41. (c)
45. (b)
J = n e vd
We know that,
Put, v d = µE
J = n e µE NA xn
=
ND xp
Hence, I = n e µ EA
So, I depends upon carrier concentration and NA x
So, +1 = n +1
electric field. ND xp

42. (a) N A + ND xn + x p
=
The electron concentration at the edge of the ND xp
depletion region on the p-side is given by 1017 3 µm
qV f 16 =
10 xp
np = npo = exp
kT x p = 0.3 µm
qN A x p qN D xn
ni2 and Emax = =
where, npo =
NA s s
19
1.6 × 10 × 9 × 1016 × 0.3 × 10 4
(1.5 × 1010 )2 Emax =
npo = 1.04 × 10 12
1016
= 4.15 × 105 V/cm
= 2.25 × 104 cm–3
we then have, 47. Sol.
0.3 Dp
np = 2.25 × 10 4 exp
0.026 = VT
µp
np = 2.25 × 104
× 1.025 × 105
Dp = µpVT
np = 2.306 × 10 cm–3
9
= 500 × 26 × 10–3
Dp = 13 cm2/s
 GATE Previous Years Solved Paper 15

48. (a) 56. (c)

1.24 The concentration of doping is not uniform
c
µm throughout the semiconductor, thus to maintain
Eg ( eV )
equilibrium internal electric field is generated
1.24 due to which the band of the semiconductor is
c
0.87 µm
1.42 varying with slop –0.1 eV/cm.
The generated electric field opposes the
50. Sol.
diffusion of carriers due to concentration
1.24 1.24 gradient and thus there will be not current flow
c = µm = µm
Eg ( eV ) 1.1 inside the semiconductor.

c = 1.12 µm 57. Sol.

51. Sol. Electric field inside semiconductor bar,

E = 10 V/cm
For a compensated p-type semiconductor, the
Velocity of electron,
minority carrier electron concentration is
V = µE = 1 × 104 cm/sec
given by
The average time (in µs) taken by the electrons
ni2 to move from one end of the bar to other end is
no =
(N A ND ) L
= 100 µsec
2.25 × 10 20 V
no =
(10 18 1015 ) 58. (a)
= 225.2 cm–3 Pentavalent impurity when introduced in
intrinsic SC, a new discrete energy level called
53. Sol.
donor energy level is created just below the
1 1 conduction band.
P= =
N ND qµn
59. Sol.
1
=
10 16 × 1.6 × 10 19
× 1200
–3
NA(cm )

= 0.52 -cm 16 36.84

10

54. Sol. 32.24

14
As per the graph, mobility of electrons at the 10
1 2 0.001 0.01
concentration 1016/cm3 is 1200 cm2/V-s. µm (log scale)
So, µn = 1200 cm2/V-s
Applying the current density equation,
N = ND qµn J = Jdrift + Jdrift
= 1016 × 1.6 × 10–19 × 1200 J=0
= 1.92 S cm–1 dp
0 = qDp + q µ p pE
dx
55. Sol.
dp
The concentration of hole-electron per in 1 µsec qDp = qµppE
dx
= 1020 × 10–6 = 1014/cm3
So, the power of 10 is 14, VT dp
E=
x = 14 p( x ) dx
16 Electronics Engineering Electronic Devices & Circuits

V dp Slope of the curve,

E =
p( x ) dx 107 0
m = = 20
5 (y = mx)
d 5 × 10
E = VT ln[ N A ( x )]
dx vd = 20 × E = 20 × 5 × 104
= 106 V/cm
ln (1016 ) ln (1014 )
E = VT J = nevd
4
(2 1) × 10
= 1 × 1016 × 1.6 × 10–19 × 106
36 32.23 = 1.6 × 103 A/cm2
= 0.026
1 × 10 4 = 1.6 kA/cm2
= 1198.6 V/cm 64. (d)
= 1.198 kV/cm
EC EV kT NC
EFi = ln
60. (a) 2 2 NV
Given, Gopt = 1.5 × 1020/cm3/sec
NV
NA NC =
Gopt = R = 2
P
0.026
NA = ln 0.5 = 9.01 meV
1.5 × 102 = 2
0.1 × 10 6
NA = 1.5 × 1013/cm3 S65. (c)
NA = 1016 per cm3
t/ p
P(t) = Pno e G1 = 1020 per cm3-S
= 1.5 × 1013 e–0.3/0.1 = 100 µs
= 7.46 × 1011/cm3 ni = 1010 per cm3
Steady-state excess carriers
61. (a) p = n=
Si acts as p-type dopant in As sites. = G1 = 1020 × 100 × 10–6
Si acts as n-type dopant in As sites. = 1016 per cm3
p p = ppo + = 2 × 1016 per cm3
62. Sol.
np = npo + = 1016 per cm3
Net hole density varying in the direction of x is, pp np = 2 × 1032 per cm6
pn(x) = pno + p = pno + GL p
66. (a)
x
= pno + GLD p 1 Given, P = 1017 cm–3 = P0
L
ni2 1020
dp GLo p n0 = = = 103 cm 3
Jp, drift = eDp = eDp P0 1017
dx L
Ln = 2 µm
19
1.6 × 10 × 100 × 10 17 × 10 4
= 4
A/cm 2 nP0 = 1014 cm–3
0.1 × 10
= 16 A/cm2 nP(x)

63. Sol.
n P0
V 5
E = = = 5 × 10 4 V/cm
d 10 4 nP0 3 –3
nP0 = n0 = 10 cm
x
 GATE Previous Years Solved Paper 17

Excess electron concentration at any distance • Total current is spatially constant in a two
‘x’ is, terminal electronic device, however
x / Ln individual currents vary spatially under
nP(x) = nP 0 e
dark and steady-state condition.
= 1014 e–2/2 = 1014 e–1 • Beyond 300 K, mobility of electron decreases
= 3.67 × 1013 cm–3 with increases in temperature.
= 0.367 × 1014 cm–3
Hence, statement(s): (a) and (c) are correct.
67. (a, c)
• In intrinsic semiconductor at equilibrium,
n = p = ni.
• Collector region is generally lightly doped
than base region in a BJT.
 2 PN - Junction Diodes and
Special Diodes
Q.1 The diffusion capacitance of a p-n junction KT I
(c) V = sin h 1
(a) decreases with increasing current and q 2
increasing temperature.
KT
(b) decreases with decreasing current and (d) V = [exp( I ) 1]
q
increasing temperature.
[EC-1988 : 2 Marks]
(c) increases with increasing current and
increasing temperature. Q.4 The switching speed of P+N junction (having a
(d) does not depend on current and heavily doped P region) depends primarily on
temperature. (a) the mobility of minority carriers in the P+
[EC-1987 : 2 Marks] region.
(b) the lifetime of minority carriers in the P+
Q.2 For an pn-junction match the type of breakdown region.
with phenomenon:
(c) the mobility of majority carriers in the N
1. Avalanche breakdown region.
2. Zener breakdown (d) the lifetime of majority carriers in the N
3. Punch through region.
A. Collision of carriers with crystal ions [EC-1989 : 2 Marks]
B. Early effect
Q.5 In a Zener diode
C. Rupture of covalent bond due to strong (a) only the P region is heavily doped.
electric field.
(b) only the N region is heavily doped.
(a) 1-B, 2-A, 3-C (b) 1-C, 2-A, 3-B
(c) both P and N regions are heavily doped.
(c) 1-A, 2-B, 3-C (d) 1-A, 2-C, 3-B (d) both P and P regions are lightly doped.
[EC-1988 : 2 Marks] [EC-1989 : 2 Marks]
Q.3 In the circuit shown below the current voltage Q.6 In a junction diode
relationship when D1 and D2 are identical is (a) the depletion capacitance increases with
given by (Assume Ge diodes) increase in the reverse bias.
+ (b) the depletion capacitance decreases with
D1 increase in the reverse bias.
I
(c) the depletion capacitance increases with
D2
increase in the forward bias.
(d) the depletion capacitance is much higher
V than the depletion capacitance when it is
+ forward biased.
[EC-1990 : 1 Mark]
KT I
(a) V = sin h
q 2 Q.7 In a uniformly doped abrupt p-n junction the
doping level of the n-side is four (4) times the
KT I doping level of the p-side the ratio of the
(b) V = ln
q Io depletion layer width of n-side verses p-side is
 GATE Previous Years Solved Paper 19

(a) 0.25 (b) 0.5 (c) does not depend on doping concentrations.
(c) 1.0 (d) 2.0 (d) increases with increase in doping
[EC-1990 : 2 Marks] concentration.
[EC-1995 : 1 Mark]
Q.8 The small signal capacitance of an abrupt P+ n
junction is 1 nf/cm2 at zero bias. If the built-in Q.12 A Zener diode works on the principle of
voltage is 1 volt, the capacitance at a reverse (a) tunneling of charge carriers across the
bias voltage of 99 volts in junction.
(a) 10 (b) 0.1 (b) thermionic emission.
(c) 0.01 (d) 100 (c) diffusion of charge carriers across the
[EC-1991 : 2 Marks] junction.
(d) hopping of charge carriers across the
Q.9 Referring to the below figure the switch ‘S’ is in
junction.
position 1 initially and steady-state condition
exist from time t = 0 to t = t0 , the switch is [EC-1995 : 1 Mark]
suddenly thrown into position 2. The current Q.13 The depletion capacitance, CJ of an abruptly p-n
‘I’ through the 10 K resistor as a function of time junction with constant doping on either side
t, from t = 0 is (Given the sketch showing the varies with R.B. VR as,
magnitudes of the current at t = 0, t = t0 and
t = ). (c) CJ VR (b) C J VR 1

(c) C J VR 1/2 (d) C J VR 1/3

1 2
10 k I [EC-1995 : 1 Mark]

20 V 20 V Q.14 The static characteristic of an adequately

forward biased p-n junction is a straight line, if
the plot is of
(a) log I vs log V (b) log I vs V
[EC-1991 : 2 Marks]
(c) I vs log V (d) I vs V
Q.10 The built-in potential (diffusion potential) in a [EC-1998 : 1 Mark]
p-n junction
Q.15 A pn-junction in series with a 100 resistor, is
(a) is equal to the difference in the Fermi-level
forwarded biased. So that a current of 100 mA
of the two sides, expressed in volts.
flows. If the voltage across this combination is
(b) increases with the increase in the doping instantaneously reversed at t = 0 current through
levels of the two sides. diodes is approximately given by
(c) increases with the increase in temperature. (a) 0 mA (b) –100 mA
(d) is equal to the average of the Fermi-level of (c) 100 mA (d) 50 mA
the two sides.
[EC-1998 : 2 Marks]
[EC-1993 : 2 Marks]
Q.16 In the figure, silicon diode is carrying a constant
Q.11 The diffusion potential across a pn-junction current of 1 mA. When the temperature of the
(a) decreases with increasing doping diode is 20°C, VD is found to be 700 mV. If the
concentration. temperature rises to 40°C, V D becomes
(b) increases with decreasing bandgap. approximately equal to
 20 Electronics Engineering Electronic Devices & Circuits

+ Q.20 A particular green LED emits light of

wavelength 5490 Å. The energy bandgap of the
semiconductor material used there is
VD
(Plank’s constant = 6.626 × 10–34 J-s)
(a) 2.26 eV (b) 1.98 eV
–
(c) 1.17 eV (d) 0.74 eV
(a) 740 mV (b) 660 mV
[EC-2003 : 2 Marks]
(c) 680 mV (d) 700 mV
[EC-2002 : 1 Mark] Q.21 In a abrupt p-n junction, the doping
concentrations on the p-side and n-side are
Q.17 Choose proper substitute for X and Y to make
NA = 9 × 10 16/cm and ND = 1 × 10 16/cm 3
the following statement correct tunnel diode
respectively. The p-n junction is reverse biased
and avalanche photodiode are operated in X
and the total depletion width is 3 µm. The
bias and Y bias respectively.
depletion width on the p-side is
(a) X : reverse, Y : reverse
(a) 2.7 µm (b) 0.3 µm
(b) X : reverse, Y : forward
(c) 2.25 µm (d) 0.75 µm
(c) X : forward, Y : reverse
[EC-2004 : 2 Marks]
(d) X : forward, Y : forward
[EC-2003 : 1 Mark] Q.22 Consider an abrupt p-junction. Let Vbi be the
built-in potential of this junction and VR be the
Q.18 Match items in Group-I with items in Group-II,
applied reverse bias. If the junction capacitance
most suitably:
(C j ) is 1 pF for V bi + V R = 1 V, then for
Group-I Group-II Vbi + VR = 4 V, Cj will be
P. LED 1. Heavy doping
(a) 4 pF (b) 2 pF
Q. Avalanche 2. Coherrent radiation
(c) 0.25 pF (d) 0.5 pF
photodiode
[EC-2004 : 2 Marks]
R. Tunnel diode 3. Spontaneous emission
S. LASER 4. Current gain Q.23 A silicon pn-junction at a temperature of 20°C
has a reverse saturation current of 10 pico-
(a) P-1, Q-2, R-4, S-3
amperes (pA). The reverse saturation current at
(b) P-2, Q-3, R-1, S-4
40°C for the same bias is approximately
(c) P-3, Q-4, R-1, S-2
(a) 30 pA (b) 40 pA
(d) P-2, Q-1, R-4, S-3
(c) 50 pA (d) 60 pA
[EC-2003 : 2 Marks]
[EC-2005 : 1 Mark]
Q.19 At 300 K, for a diode current of 1 mA, a certain
germanium diode requires a forward bias of Q.24 A silicon pn-junction diode under reverse bias
0.1435 V, whereas a certain silicon diode has depletion region of width 10 µm. The
requires a forward bias of 0.718 V. Under the relative permittivity of silicon, r = 11.7 and the
conditions stated above, the closest permittivity of free space 0 = 8.85 × 10–12 F/m.
approximation of the ratio of reverse saturation The depletion capacitance of the diode per
current in germanium diode to that in silicon square meter is
diode is (a) 100 µ (b) 10 µ
(a) 1 (b) 5 (c) 1 µ (d) 20 µ
(c) 4 × 103 (d) 8 × 103 [EC-2005 : 2 Marks]
[EC-2003 : 2 Marks]
 GATE Previous Years Solved Paper 21

Q.25 The values of voltage (VD) across a tunnel-diode (b) the edge of the depletion region on the
corresponding to peak and valley currents are n-side.
Vp and Vv respectively. The range of tunnel- (c) the p+n junction.
diode voltage VD for which the slope of its I – VD (d) the center of the depletion region on the
characteristics is negative would be n-side.
(a) VD < 0 (b) 0 VD < Vp [EC-2007 : 1 Mark]
(c) Vp VD < VV (d) VD VV
Q.29 Group-I lists four types of p-n junction diodes.
[EC-2006 : 1 Mark]
Match each device in Group-I with one of the
Q.26 In the circuit shown below, the switch was options in Group-II to indicate the bias
connected to position 1 at t < 0 and at t = 0, it is condition of that device in its normal mode of
changed to position 2. Assume that the diode operation:
has zero voltage drop and a storage time ts. For Group-I Group-II
0 < t ts, vR is given by (all in Volts) P. Zener diode 1. Forward bias
1 Q. Solar cell 2. Reverse bias
R. LASER diode
+
2 S. Avalanche photodiode
(a) P-1, Q-2, R-1, S-2
5V
1k vR
(b) P-2, Q-1, R-1, S-2
(c) P-2, Q-2, R-2, S-1
– (d) P-2, Q-1, R-2, S-2
[EC-2007 : 2 Marks]
(a) vR = –5 (b) vR = +5
(c) 0 vR < 5 (d) –5 < vR < 0 Q.30 Group-I lists four different semiconductor
[EC-2006 : 2 Marks] devices. Match each device in Group-I with its
characteristic property in Group-II:
Q.27 Find the correct match between Group-I and
Group-I Group-II
Group-II:
P. BJT 1. Population inversion
Group-I Group-II
Q. MOS capacitor 2. Pinch-off voltage
E. Varactor diode 1. Voltage reference
R. LASER diode 3. Early effect
F. PIN diode 2. High-frequency switch
S. JFET 4. Flat-band voltage
G. Zener diode 3. Tuned circuits
(a) P-3, Q-1, R-4, S-2
H. Schottky diode 4. Current controlled
(b) P-1, Q-4, R-3, S-2
attenuator
(c) P-3, Q-4, R-1, S-2
(a) E-4, F-2, G-1, H-3
(d) P-3, Q-2, R-1, S-4
(b) E-2, F-4, G-1, H-3
[EC-2007 : 2 Marks]
(c) E-3, F-4, G-1, H-2
(d) E-1, F-3, G-2, H-4 Q.31 A p+n junction has a built-in potential of 0.8 V.
[EC-2006 : 2 Marks] The depletion layer width at a reverse bias of
1.2 V is 2 µm. For a reverse bias of 7.2 V, the
Q.28 In a p+n junction diode under reverse bias, the depletion layer width will be
magnitude of electric field is maximum at
(a) 4 µm (b) 4.9 µm
(a) the edge of the depletion region on the
(c) 8 µm (d) 12 µm
p-side.
[EC-2007 : 2 Marks]
 22 Electronics Engineering Electronic Devices & Circuits

Q.32 Which of the following is not associated with a (c) 1.80 MV-cm–1, directed from p-region to
p-n junction? n-region.
(a) Junction capacitance (d) 1.80 MV-cm–1, directed from n-region to
(b) Charge storage capacitance p-region.
(c) Depletion capacitance [EC-2009 : 2 Marks]
(d) Channel length modulation
Q.36 Compared to a p-n junction with
[EC-2008 : 1 Mark]
NA = ND = 1014/cm3, which one of the following
Q.33 Consider the following assertions: statements is true for a p-n junction with
S1 : For Zener effect to occur, a very abrupt NA = ND = 1020/cm3?
junction is required. (a) Reverse breakdown voltage is lower and
S2 : For quantum tunneling to occur, a very depletion capacitance is lower.
narrow energy barrier is required. (b) Reverse breakdown voltage is higher and
Which of the following is correct? depletion capacitance is lower.
(a) Only S2 is true. (c) Reverse breakdown voltage is lower and
(b) S1 and S2 are both true but S2 is not a reason depletion capacitance is higher.
for S1. (d) Reverse breakdown voltage is higher and
(c) S1 and S2 are both true and S2 is a reason for depletion capacitance is higher.
S1. [EC-2010 : 2 Marks]
(d) Both S1 and S2 are false.
Q.37 A silicon pn-junction is forward biased with a
[EC-2008 : 2 Marks]
constant current at room temperature. When the
Common Data for Questions (34 and 35): temperature is increased by 10°C, the forward
Consider a silicon p-n junction at room temperature bias voltage across the pn-junction
having the following parameters: (a) increases by 60 mV
Doping on the n-side = 1 × 1017 cm–3 (b) decreases by 60 mV
Depletion width on the n-side = 0.1 µm (c) increases by 25 mV
Depletion width on the p-side = 1.0 µm (d) decreases by 25 mV
Intrinsic carrier concentration = 1.4 × 1010 cm–3 [EC-2011 : 1 Mark]
Thermal voltage = 26 mV
Q.38 A Zener diode, when used in voltage
Permittivity of free space = 8.85 × 10–14 F-cm–1
stabilization circuits, is biased in
Dielectric constant of silicon = 12
(a) reverse bias region below the breakdown
Q.34 The built-in potential of the junction voltage.
(a) is 0.70 V. (b) reverse breakdown region.
(b) is 0.76 V. (c) forward bias region.
(c) is 0.82 V. (d) forward bias constant current mode.
(d) cannot be estimated from the data given. [EC-2011 : 1 Mark]
[EC-2009 : 2 Marks]

Q.35 The peak electric field in the device is Q.39 In a forward biased pn-junction, the sequence
(a) 0.15 MV-cm–1, directed from p-region to of events that best describes the mechanism of
n-region. current flow is
(b) 0.15 MV-cm–1, directed from n-region to (a) injection, and subsequent diffusion and
p-region. recombination of minority carriers.
 GATE Previous Years Solved Paper 23

(b) injection, and subsequent drift and (a) both the P-region and the N-region are
generation of minority carriers. heavily doped.
(c) extraction, and subsequent diffusion and (b) the N-region is heavily doped compared to
generation of minority carriers. the P-region.
(d) extraction, and subsequent drift and (c) the P-region is heavily doped compared to
recombination of minority carriers.
the N-region.
[EC-2013 : 1 Mark]
(d) an intrinsic silicon region is inserted
Q.40 When the optical power incident on a between the P-region and the N-region.
photodiode is 10 µW and the respectively is [EC-2015 : 1 Mark]
0.8 A/W, the photocurrent generated (in µA), is
________ . Q.44 The built-in potential of an abrupt p-n junction
[EC-2014 : 1 Mark] is 0.75 V. If its junction capacitance (CJ) at a
reverse bias (VR) of 1.25 V is 5 pF, the value of CJ
Q.41 Consider an abrupt PN junction (at T = 300 K)
(in pF) when VR = 7.25 V is ______ .
shown in the figure. The depletion region width
[EC-2015 : 2 Marks]
xn on the N-side of the junction is 0.2 µm and the
permittivity of silicon ( si) is 1.044 × 10–12 F/cm. Q.45 For a silicon diode with long P and N regions,
At the junction, the approximate value of the the acceptor and donor impurity concentrations
peak electric field (in kV/cm) is _______ . are 1 × 1017 cm–3 and 1 × 1015 cm–3, respectively.
The lifetimes of electrons in P-region and holes
in N-region are both 100 µs. The electron and
+
P -region N-region
xn 16 3 hole diffusion coefficients are 49 cm2/s and
NA >> ND NA = 10 /cm
36 cm2/s, respectively. Assume kT/q = 26 mV,
[EC-2014 : 2 Marks] the intrinsic carrier concentration is
1 × 1010 cm–3, and q = 1.6 × 10–19 C. When a
Q.42 The donor and acceptor impurities in an abrupt
forward voltage of 208 mV is applied across the
junction silicon diode are 1 × 1016 cm–3 and
diode, the hole current density (in nA/cm)2
5 × 1018 cm–3, respectively. Assume that the
injected from P-region to N-region is ______ .
intrinsic carrier concentration in silicon
[EC-2015 : 2 Marks]
kT
ni = 1.5 × 1010 cm–3 at 300 K, =26 mV & the Q.46 The electric field profile in the depletion region
q
of a p-n junction in equilibrium is shown in the
permittivity of silicon si = 1.04 × 10–12 F/cm.
The built-in potential and the depletion width figure. Which one of the following statements is
of the diode under thermal equilibrium not true?
conditions, respectively, are E(V/cm)
(a) 0.7 V and 1 × 10–4 cm 10
4

(b) 0.86 V and 1 × 10–4 cm

(c) 0.7 V and 3.3 × 10–5 cm
(d) 0.86 V and 3.3 × 10–5 cm
[EC-2014 : 2 Marks]
X(µm)
–0.1 0 0.5 1.0
Q.43 A region of negative differential resistance is
observed in the current voltage characteristic of (a) The left side of the junction is n-type and
the right side is p-type.
a silicon PN junction if
 24 Electronics Engineering Electronic Devices & Circuits

(b) Both the n-type and p-type depletion regions I

are uniformly doped.
(c) The potential difference across the depletion
region is 700 mV. X Y Z
(d) If the p-type region has a doping
concentration of 1015 cm–3, then the doping
concentration in the n-type region will be V
1016 cm–3.
[EC-2015 : 2 Marks] (a) EgX > EgY > EgZ
(b) EgX = EgY = EgZ
Q.47 Consider a silicon p-n junction with a uniform
(c) EgX < EgY < EgZ
acceptor doping concentration of 1017 cm–3 on
(d) no relationship among these band gaps
the p-side and a uniform donor doping
concentration of 1016 cm–3 on the n-side. No exists
external voltage is applied to the diode. [EC-2016 : 1 Mark]
Given: kT/q = 26 mV, ni = 1.5 × 1010 cm–3, Q.50 The figure shows the I-V characteristics of a
–14 F/m & q = 1.6 × 10–19 C.
si = 12 0, 0 = 8.85 × 10 solar cell illuminated uniformly with solar light
The charge per unit junctions area (nC cm–2) in
of power 100 mW/cm2. The solar cell has an
the depletion region on the p-side is ______ .
area of 3 cm2 and a fill factor of 0.7. The maximum
[EC-2016 : 2 Marks]
efficiency (in %) of the device is ______ .
Q.48 Consider avalanche breakdown in a silicon p+n I
junctions. The n-region is uniformly doped with
a donor density ND. Assume that breakdown ISC = 180 mA
occurs when the magnitude of the electric field
at any point in the device becomes equal to the
critical field Ecrit. Assume Ecrit to be independent
of ND. If the built-in voltage of the p+n junction is
much smaller than the breakdown voltage, VBR, V
(0, 0) VOC = 0.5 V
the relationship between VBR and ND is given by
[EC-2016 : 1 Mark]
(a) VBR × N D = constant
Q.51 Consider a region of silicon devoid of electrons
(b) N D × VBR = constant
and holes, with an ionized donor density of
(c) ND × VBR = constant
(d) ND/VBR = constant N d+ = 1017 cm 3 . The electric field at x = 0 is
[EC-2016 : 2 Marks] 0 V/cm and the electric filed at x = L is 50 kV/cm
in the positive x-directions. Assume that the
Q.49 The I-V characteristics of three types of diodes
electric field is zero in the y and z-directions at
at the room temperature, made of
all points.
semiconductors X, Y and Z are shown in the
figure. Assume that the diodes are uniformly
doped and identical in all respects except their
materials. If EgX, EgY, and EgZ are the band gaps N d+ = 1017 cm 3

of X, Y and Z, respectively, then

x=0 x=L
 GATE Previous Years Solved Paper 25

Given: q = 1.6 × 10–19 Coulomb, 0 = 8.85 × 10–14 Q.55 A abrupt pn-junction (located at x = 0) is
F/cm, r = 11.7 for silicon, the value of L (in nm) uniformly doped on both p and n sides. The
is _______ . width of the depletion region is W and the
[EC-2016 : 2 Marks] electric field variation in the x-direction is E(x).
Which of the following figures represents the
Q.52 An n + -n silicon device is fabricated with
electric field profile near the pn-junction?
uniform and non-degenerate donor doping
E(x )
concentrations of N D1 = 1 × 10 18 cm–3 and
ND2 = 1 × 1015 cm–3 corresponding to the n+ and n-side p-side
n regions respectively. At the operational
(a)
temperature T, assume complete impurity
ionization, kT/q = 25 mV, and intrinsic carrier (0, 0)
x
concentration to be ni = 1 × 1010 cm–3. What is
W
the magnitude of the built-in potential of this
device? E(x )
(a) 0.748 V (b) 0.460 V
n-side p-side
(c) 0.288 V (d) 0.173 V
[EC-2017 : 1 Mark] (b)

Q.53 As shown, two silicon (Si) abrupt p-n junction (0, 0)

x
diodes are fabricated with uniform donor W
doping concentrations of ND1 = 1014 cm–3 and
E(x )
ND2 = 1016 cm–3 in the n-regions of the diodes ,
and uniform acceptor doping concentrations of
n-side p-side
NA1 = 1014 cm–3 and NA2 = 1016 cm–3 in the
p-regions of the diodes, respectively. Assuming W
(c) x
that the reverse bias voltage is >> built-in (0, 0)
potential of the diodes, the ratio C2/C1 of their
reverse bias capacitances for the same applied
reverse bias, is _______ .

p n p n E(x )
14 –3 14 –3 16 –3 16 –3
10 cm 10 cm 10 cm 10 cm
n-side p-side

C1 C2
W
Diode 1 Diode 2 (d) x
(0, 0)
[EC-2017 : 2 Marks]

Q.54 For a particular intensity of incident light on a

silicon pn-junction solar cell, the photocurrent
density (JL) is 2.5 mA/cm2 and the open-circuit [EC-2017 : 2 Marks]
voltage (VOC) is 0.451 V. Consider thermal
voltage (VT) to be 25 mV. If the intensity of the Q.56 In a p-n junction diode at equilibrium, which
incident light is increased by 20 times, assuming one of the following statements is not true?
that the temperature remains unchanged, VOC (a) The hole and electron diffusion current
(in Volts) will be ________ . components are in the same direction.
(b) The hole and electron drift current
[EC-2017 : 2 Marks]
components are in the same direction.
 26 Electronics Engineering Electronic Devices & Circuits

(c) On an average, holes and electrons drift in Q.61 Which one of the following options describes
opposite direction. correctly the equilibrium band diagram at
(d) On an average, electrons drift and diffuse T = 300 K of a silicon pnn+ p++ configuration
in the same direction. shown in the figure?
[EC-2018 : 1 Mark]
p n n+ p++
Q.57 A p-n step junction diode with a contact
potential of 0.65 V has a depletion width of 1 µm EC
at equilibrium. The forward voltage (in Volts),
correct to two decimal places at which this EF
(a)
width reduces to 0.6 µm is ______ .
EV
[EC-2018 : 1 Mark]

Q.58 Red (R), Green (G) and Blue (B) Light Emitting
Diodes (LEDs) were fabricated using p-n EC
junctions of there different inorganic
semiconductors having different band-gaps. (b)
EF
The built-in voltages of red, green and blue
diodes are VR, VG, VB respectively. EV

Assume donor and acceptor doping to be the

same (NA and ND respectively) in the p and n
EC
sides of all the three diodes.
Which one of the following relationships about EF
(c)
the built-in voltages is true?
(a) VR > VG > VB (b) VR < VG < VB
(c) VR = VG = VB (d) VR > VG < VB EV
[EC-2018 : 2 Marks]
EC
Q.59 p–
A junction is made between Si with doping
EV
density NA1 = 1015 cm–3 and p Si with doping
(d)
density NA2 = 1017 cm–3. EF
Given: Boltzmann constant K = 1.38 × 10–23 J-K–1,
electronic charge q = 1.6 × 10–19 C. Assume 100%
acceptor ionization. [EC-2019 : 1 Mark]
At room temperature (T = 300 K), the magnitude
of the built-in potential (in Volts, correct to two Q.62 In an ideal pn-junction with an ideality factor of
decimal places) across this junction will be ____. 1 at T = 300 K, the magnitude of the reverse-bias
voltage required to reach 75% of its reverse
[EC-2018 : 2 Marks]
saturation current, rounded off to 2 decimal
Q.60 A solar cell of area 1.0 cm2, operating at 1.0 sun places, is ______ mV. [k = 1.38 × 10–23 J-K–1,
intensity, has a short-circuit current of 20 mA, h = 6.625 × 10–34 J-s, q = 1.602 × 10–19 C]
and an open-circuit voltage of 0.65 V. Assuming [EC-2019 : 2 Marks]
room temperature operation and thermal and
equivalent voltage of 26 mV, the open-circuit Q.63 A Germanium sample of dimensions 1 cm × 1 cm
voltage (in Volts, correct to two decimal places) is illuminated with a 20 mW. 600 mm laser light
at 0.2 sun intensity is _______ . source as shown in the figure. The illuminated
[EC-2018 : 2 Marks] sample surface has a 100 nm of loss-less silicon
 GATE Previous Years Solved Paper 27

dioxide layer that reflects one-fourth of the Q.66 A one-sided abrupt pn-junction diode has a
incident light. From the remaining light, one- depletion capacitance of CD of 50 pF at a reverse
third of the power is reflected from the silicon 2 versus the
bias of 0.2 V. The plot of 1/C D
dioxide Germanium interface, one-third is
absorbed in the Germanium layer, and one-third applied voltage V for this diode is a straight
is transmitted through the other side of the line as shown in the figure below. The slope of
sample. If the absorption coefficient of the plot is _____ × 1020 F–2 V–1.
Germanium at 600 nm is 3 × 104 cm–1 and the 2
1/C D
bandgap is 0.66 eV, the thickness of the
Germanium layer, rounded off to 3 decimal
places, is ______ µm.

20 mW, 600 nm

1 cm V
0
1 cm
(a) –1.2 (b) –5.7
Silicon dioxide 100 nm (c) –3.8 (d) –0.4
Germanium T [EC-2020 : 2 Marks]

[EC-2019 : 2 Marks] Q.67 A pn-junction solar cell of area 1.0 cm 2 ,

illuminated uniformly with 100 mW cm–2, has
Q.64 The quantum efficiency ( ) and responsively (R) the following parameters: Efficiency = 15%,
at a wavelength (in µm) in a p-i-n photodetector open-circuit voltage = 0.7 V, fill factor = 0.8 and
are related by thickness = 200 µm. The charge of an electron is
1.24 × × 1.6 × 10–19 C. The average optical generation
(a) R = (b) R =
1.24 rate (in cm–3 S–1) is
1.24 (a) 1.04 × 1019 (b) 83.60 × 1019
(c) R = (d) R =
× 1.24 × (c) 0.84 × 1019 (d) 5.57 × 1019
[EC-2019 : 2 Marks] [EC-2020 : 2 Marks]

Q.65 Consider the recombination process via bulk Q.68 The energy band diagram of a p-type
traps in a forward biased pn-homojunction rate semiconductor bar of length ‘L’ under
is Umax. If the electron and the hole capture cross- equilibrium condition (i.e., the Fermi energy level
section are equal, which one of the following is EF is constant) is shown in the figure. The
false? valance band EV is sloped since doping is non-
(a) With all other parameters unchanged, Umax uniform along the bar. The difference between
decreases if the intrinsic carrier density is the energy levels of the valence band at the two
reduced. edges of the bar is .
(b) With all other parameters unchanged, Umax
p-type
increases if the thermal velocity of the
carriers increases. EF
EV
(c) Umax is occurs at the edges of the depletion
region in the device.
(d) Umax depends exponentially on the applied
z=0 z=L
bias.
[EC-2020 : 1 Mark]
 28 Electronics Engineering Electronic Devices & Circuits

If the change of an electron is q, then the (a) 226 meV (b) 174 meV
magnitude of the electric field developed inside (c) 218 meV (d) 182 meV
this semiconductor bar is [EC-2022]
2 3
(a) (b) Q.71 A p-type semiconductor with zero electric field
qL 2qL
is under illumination (low level injection) in
steady-state condition. Excess minority carrier
(c) (d)
2qL qL density is zero at x = ±2In, where ln = 10–4 cm is
[EC-2021 : 1 Mark] the diffusion length of electrons. Assume
electronic charge, q = –1.6 × 10–19 C. The profiles
Q.69 A silicon P-N junction is shown in the figure. of photo-generation rate of carriers and the
the doping in the ‘P’ region is 5 × 1016 cm–3 and recombination rate of excess minority carriers
doping in the ‘N’ region is 10 × 1016 cm–3. The (R) are shown. Under these conditions, the
parameters given are: magnitude of the current density due to the
Built-in voltage ( bi) = 0.8 V photo-generated electrons at x = ±2ln is ______
Electron charge (q) = 1.6 × 10–19 C mA/cm2 (Rounded off to two decimal places).
Vacuum permittivity ( 0) = 8.85 × 10–12 F/m
Relative permittivity of silicon ( si) = 12 Semiconductor

20
P N Photo generation 10

–3
Rate (cm /s) 0
1.2 µm 0.2 µm x
–2ln –ln 0 ln 2ln
The magnitude of reverse bias voltage that
would completely deplete one of the two regions
(P or N) prior to the other (Rounded off to one R = 1020 exp
x
Excess minority ln
decimal place) is _______ V. carrier recombination 10
20

–3
[EC-2021 : 2 Marks] rate (cm /s)

Q.70 In a non-degenerate bulk semiconductor with

0
electron density n = 1016 cm–3, the value of x
–2ln –ln 0 ln 2ln
EC – EFn = 200 meV, where EC and EFn denote the
bottom of the conduction band energy and
[EC-2022]
electron Fermi level energy, respectively.
Assume thermal voltage as 26 meV and the
intrinsic carrier concentration is 1010 cm–3. For
n = 0.5 × 1016 cm–3, the closest approximation of
the value of (EC – EFn), among the given options,
is ______ .
 GATE Previous Years Solved Paper 29

Answers PN - Junction Diodes and Special Diodes

1. (b) 2. (d) 3. (b) 4. (*) 5. (c) 6. (b) 7. (a) 8. (b)

9. (Sol.) 10. (a, b) 11. (d) 12. (a) 13. (c) 14. (b) 15. (c) 16. (b)

17. (c) 18. (c) 19. (c) 20. (a) 21. (b) 22. (d) 23. (b) 24. (b)

25. (c) 26. (a) 27. (c) 28. (c) 29. (b) 30. (c) 31. (a) 32. (d)

33. (a) 34. (b) 35. (b) 36. (c) 37. (d) 38. (b) 39. (a) 40. (8)

41. (–30.65) 42. (d) 43. (a) 44. (2.5) 45. (0.5147) 46. (c) 47. (–48) 48. (c)

49. (c) 50. (21) 51. (32.36) 52. (d) 53. (10) 54. (0.526) 55. (a) 56. (d)

57. (0.42) 58. (b) 59. (0.12) 60. (0.61) 61. (d) 62. (35.83) 63. (0.231) 64. (b)

65. (c) 66. (*) 67. (c) 68. (d) 69. (8.2 V) 70. (c) 71. (0.59)

Solutions PN - Junction Diodes and Special Diodes

1. (b) Diode D1 is in forward bias.

Decreases with decreasing current and Diode D2 is in reverse bias.
increasing temperature. So, the current through diode D1 is forward bias
current If and current through diode D2 is
Diffusion capacitance = CD = reverse current Io.
r
So, total current = I = If + Io
VT
r= V / VT
If I = Io ( e d 1) = I o eVd / VT
Io

If If
= I = ( I o eVd / VT Io ) + Io
CD =
VT kT
CD If I = I o eVd / VT
1 I
CD eVd / VT =
T Io
2. (d) Vd I
= ln
1-A, 2-C, 3-B VT Io
Avalanche breakdown Collision of carriers
with crystal ions. I
Vd = VT ln
Io
Zener breakdown Rupture of covalent bond
due to strong electric field. KT I
Punch through Early effect Vd = ln [For Ge, = 1]
q Io
3. (b) Vd = V

KT I KT I
V= ln V= ln
q Io q Io
30 Electronics Engineering Electronic Devices & Circuits

4. (*)
9. Sol.
The lifetime of majority carriers in the N-region.
When diode instantaneously switched from a
The switching speed of a P+N (heavily doped
conduction state it needs some time to return to
p-region) junction depends on the lifetime ( ) of
non-conduction state, so diode behaves as short
minority carriers (holes) in the N-region (lightly
circuit for the little time, even in reverse direction.
doped region).
This is due to accumulation of stored excess
5. (c) minority carrier charge when diode is forward
Both P and N-regions are heavily doped. biased.
In a Zener diode P and N both the regions are Time required to return back to state of non-
heavily doped. conduction is ‘Reverse recovery time’ which is
Doping level of Zener diode is 1 : 105. ‘storage time’ and ‘transition time’.
• Storage time is the period for which diode
6. (b) remains in conduction state even in reverse
The depletion capacitance decreases with direction.
increase in the reverse bias. • Transition time is time elapsed in returning
Depletion width = W back to state of non-conduction.
W VRB For 0 < t < to, Vm = 20 V, ‘D’ is forward biased.

W Reverse bias voltage Vm 20

i= = = 2 mA
R 10 k
A
Capacitance = C = For t > to, Vm = –20
W
1 During storage time: to < t < to + ts,
C Vm
W 20
i= = = 2 mA
1 R 10 k
C
Reverse bias voltage During transition time: to + ts < t < to + ts + tt
‘i’ decreases exponentially to (–Io)
7. (a) For t > to + ts + tt,
In the step graded diode, by using charge i = (–Io)
density condition or charge neutrality condition, I
WN NA
= 2 mA
WP ND
WN NA 1
= = = 0.25 to to + ts to + ts + t1
WP 4N A 4 t
–Io

8. (b)
–2 mA
For abrupt p-n junction,
C j V–1/2
1 10. (a, b)
Cj
V Increases with the increase in the doping levels
C2 V1 1+0 1 1 of the two sides. Built in potential or diffusion
= = = = potential across a p-n junction diode,
C1 V2 1 + 99 100 10
C1 1 N A ND
C2 = = = 0.1 nF/cm 2 Vo = kT ln
10 10 ni2
 GATE Previous Years Solved Paper 31

So, m = VT
So, Vo ni2
x = ln (I)
Vo NA ND
c = – VT ln (Io)
So, option (a) and option (b) both are correct.
y = Vd
11. (d)
ln (If)
Increases with increase in doping concentration
contact potential of diffusion potential across a
pn-junction,

N A ND
Vo = kT ln
ni2
Vd
Vr
at constant temperature,
Vo NAND
15. (c)
12. (a) Diode is forward bias in the starting.
Tunneling of charge carriers across the junction Diode is reverse bias later.
a Zener diode works on the principle of But at t = 0 diode is reverse bias.
tunneling of charge carriers across the junction So, I = –100 mA
which leads the junction to breakdown.
16. (b)
13. (c) dV
For either Si or Ge 2 mV / °C
dT
Cj VR 1 /2
In order to maintain a constant value of I.
The depletion layer capacitance of diode is T2 – T1 = 40 – 20 = 20°C
given, 2 × 20 mV = 40 mV
C T V–n Therefore, VD = 700 – 40 = 660 mV
1
n= for step graded or abrupt p-n junction 19. (c)
2
= 1 for Germanium
CT VR 1 /2 = 2 for Silicon at low value of current

I = I o Si ( eVD1 / VT
1) ...(i)
14. (b)
(Log I versus V)
I = I o Ge ( eVD2 / VT
1) ...(ii)
I = Io [ eVd / VT 1] = forward current
LHS of (i) = (ii),
Q eVd / VT >>1
VD1 VD2
I = Io eVd / VT I o Si e VT
1 = I o Ge e VT
1
I
eVd / VT =
Io VD1 0.718
3
I oGe e VT
1 e 2 × 26 × 10 1
Vd I = =
= ln = ln ( I ) ln ( I o ) I oSi VD2
e
0.1435
1
VT Io e VT
1 26 × 10 3
e
Vd = VT ln(I) – VT ln(Io)
= 4 × 103
y = mx + C
32 Electronics Engineering Electronic Devices & Circuits

20. (a) 26. (a)

1.24 When diode is instantaneously switched from
Eg = eV
(µm) a conduction state it needs time to return to non-
conduction state, so behaves short-circuited for
1.24
= 4
= 2.26 eV a small time period in reverse direction.
5490 × 10 µm
Storage time: The time period for which diode
21. (b) remains in conduction state even in the reverse
direction so,
n NA
= ; n ( n >> p)
VR = –5 V
p ND
For t < 0,
n × ND 3 µm × 1016
= = = 0.3 µm
p NA 9 × 1016
+ +
5V 1k VR = 5 Volt
22. (d) – –

Cj Vj 1/2
For 0 < t < ts,
C j2 V1 1 1
= = =
C j1 V2 4 2
– +
C j1 1 pF
C j2 = = = 0.5 pF 5V 1k VR = –5 Volt
I
2 2 + –

23. (b)
We know that, 28. (c)
(T2 T1 ) Electrical field always maximum at the junction.
I o(T ) = I o(T ) × 2 10
2 1
31. (a)
I o(40°C) = I o
(20°C)
× 22 Junction potential = Built-in potential + Reverse
I o(40°C) = 40 pA bias voltage,
Vj = Vo + VR
24. (b) Now for abrupt pn-junction depletion width,

A W V j1/2
o r
C=
d 1/2
W = KVj
C 8.85 × 10 12 × 11.7 2 µm = K(0.8 + 1.2)1/2 ...(i)
= = 10.35 µF
A 10 × 10 6 x = K(0.8 + 7.2)1/2 ...(ii)
From equation (i) and (ii),
25. (c)
x = 4 µm
I
e

34. (b)
nc
ta

IP
is

N side is heavily doped,

es
er
–v

1/2
2 Vj
WN =
IV eN D
V
VP VV
eN D WN2
Vj = 0.76 Volts
2 o r
 GATE Previous Years Solved Paper 33

35. (b) 40. Sol.

qN o Ip
Electric field, E= (x ) Respectively (R) =
Po
At the center, x = 0 where, Ip = Photo current
qN o Po = Incident power
So, Emax = ( n) Ip = R × Po = 8 µA

1.6 × 10 19 × 1017 × 10 5 41. Sol.

= 14
12 × 8.85 × 10 For abrupt P+N junction
= –0.15 MV/cm Emax is given:
qN D xn
36. (c) Emax =
s
With increase in doping, the reverse breakdown
voltage decreases and depletion width ‘d’ also [Q NA >> ND, W xn]
decreases. Since depletion capacitance, 1.6 × 10 19 × 10 16 × 0.2 × 10 4
Emax =
C = A/d, so depletion capacitance increases 1.044 × 10 12
with increase in doping. Emax = –30.65 × 103 V/cm
Emax = –30.65 kV/cm
37. (d)
dV 42. (d)
= –2.5 mV/°C Built-in potential is given by,
dT
For 10°C voltage across pn-junction will N AND
decreases by 25 mV. Vbi = VT ln
ni2
38. (b)
1016 × 5 × 1018
Vbi = 0.026 ln = 0.86 V
Break-down voltage V 2.25 × 10 20
and depletion width W is given by,

2 1 1
6V W= + Vbi
V q N A ND

2 × 1.04 × 10 12 1 1
W= 19 18
+ × 0.86
1.6 × 10 5 × 10 10 16
Reverse Reverse bias region below W = 3.3 × 10–5 cm
breakdown the breakdown voltage
region 44. Sol.

In breakdown region only, Zener diode is useful. 1

Cj
In reverse bias region below the breakdown Vbi + VR
voltage it will behave like an open-circuit. C2 j Vbi + VR1
=
39. (a) C1 j Vbi + VR2
In a forward biased pn-junction diode, the 2 C1 j
current flow is due to diffusion of majority C 2j = C1 j = = 2.5 pF
8 2
carriers and recombination of minority carriers.
So, answer is 2.5.
34 Electronics Engineering Electronic Devices & Circuits

45. Sol. WN D 3.3255 × 10 6 × 1016

WP = =
The hole current density injected from P region N A + ND 1016 + 1017
to N region is given by = 0.3023 µ-cm
q ni2 Dp Charge per unit junction area in the depletion
VFB
exp 1 layer on p-side is
N D Lp VT
= –qNA + WP
where, = –1.6 × 10–19 × 1017 × 0.3023 × 10–6
q = Charge on electron = –4.8368 nC/cm2
ni = Intrinsic carrier concentration is silicon
ND = Donor doping 48. (c)
Dp = Hole diffusion coefficient In any type of PN-junction,
Lp = Mean diffusion length of hole 1
VBr
VFB = Forward voltage applied across diode Doping concentration
kT 1
VT = = 26 mV i.e., VBr
q ND

Lp = p Dp E2
or, VBr =
2qND
= 6
100 × 10 × 36 = 0.06 cm VBr × ND is a constant.
Using the above values, we get hole current
49. (c)
density injected from P region to N region is
X Ge diode ............... EG = 0.2 V
= 0.5147 nA/ cm2
Y Si diode ............... EG = 0.7 V
46. (c) Z GaAs diode (or) LED ............... EG = 1.3 V
Built-in potential,
50. Sol.
1
0 = 2
× (106 V/m) × (1.1 × 10 6 m) Maximum obtained power
Fill factor =
VOC I SC
= 0.55 Volts
Maximum obtained power
But in question [option (c)] is given as, 700 mV. 0.7 = 3
0.5 × 180 × 10
47. Sol. Maximum obtained power,
N A ND Pm = 0.063 W
Vo = VT ln
ni2 Pm 0.063
Efficiency, = = = 21%
G A 100 × 10 3 × 3
3 1016 × 1017 G Input light in W/cm2
= 26 × 10 ln
(1.5 × 10 10 )2
51. Sol.
Vo = 0.757 V
q
= ND XN
2 1 1
W= + Vo
q N A ND
1.6 × 10 19
5 × 103 = × 1017 × X N
2 × 8.854 × 10 16
× 12 1 1
8.85 × 10 14 × 11.7
= + 0.757
1.6 × 10 19 1016 10 17 On solving, XN = 3.2356 × 10–6 cm
= 3.3255 µ-cm = 3.236 × 10–8 m
XN = L = 32.36 nm
 GATE Previous Years Solved Paper 35

52. (d)
E(x )
n N n-side p-side
Vo = VT ln 1 = VT ln D1
n2 N D2 x NDq
xn =
N Aq
xp
v (x )
E( x ) = dx s s
18 s
10
= 0.25 ln 15
= 0.025 ln (1000)
10 Electric field
= 0.173 V profile x
–xn 0 xp

53. Sol. W

2 VR 1 1
W= + (Q VR>>Vbi) 56. (b)
e N A ND
Hole diffusion
Under reverse biased condition, p n
Electron diffusion
A 1
C = C Hole drift
W W
Electron drift
2 VR 2
C2 Hole diffusion current
W1 e 10 14
So, C 1 = W2 = = 10 Electron diffusion current
2 VR 2
e 10 16 Hole drift current
Electron drift current
54. Sol.
57. Sol.
J
VOC = VT ln L (JL Light intensity)
JS 2 1 1
Wdeap = + (Vbi VAK )
q N A ND
JL2
VOC2 VOC1 = VT ln
JS (0.65 VAK ) 0.6 µm
= = 0.6
VOC2 VOC1 = 25 ln20 75 mV = 0.075 V 0.65 1 µm

VOC2 = 0.451 V + 0.075 V = 0.526 V VAK

1 = 0.36
0.65
55. (a) VAK = 0.65 (1 – 0.36)
= 0.65 × 0.64
ND – NA = 0.416 V
n-side p-side 0.42 V
Doping ND
profile x 58. (b)

–NA R > G> B

1
Energy gap, Eg =
v (x )
So, EgR < EgG < EgB
n-side NDq p-side
Materials with high energy gap will have high
Charge xp built-in voltages, when doping concentration
density x
–xn
are same.
–NAq So, VR < VG < VB
36 Electronics Engineering Electronic Devices & Circuits

59. Sol. 64. (b)

Built-in potential, I out h f
= ×
kT N A2 q Pin
Vbi = ln
q N A1 I out
R=
1.38 × 3 Pin
= ln (100) V
1.6 × 100 q q
So, R= × = ×
= 0.1192 V 0.12 V hf hc

60. Sol. If is given in µm, then

For solar cell, q × 10 6

R= ×
hc
I SC
VOC = VT ln
Io q × 10 6
1.24
hc
I SC 2 0.20
VOC2 VOC1 = VT ln = VT ln
I SC1 1.0 So, R=
1.24
VOC2 = VOC1 0.026 ln (5) 66. ( )
= 0.65 – 0.041845
= 0.608 V 1
y= 2
CD
62. Sol. 1
y2 = = 4 × 1020
23 (50 × 10 12 )2
kT 1.38 × 10 × 300
VT = = V
q 1.602 × 10 19
= 25.843 mV
y1 = 0
V /VT 3
I = Io ( e 1) = Io x2 = –0.2 V x1 = Vbi x=V
4
V = VT ln 0.25 = –35.83 mV Depletion or transition capacitance is,
VR = V = 35.83 mV A
CD =
W
63. Sol.
For one-sided PN-junction (Ex: P+N junction)
Pabsorbed = Pincident (1 – e– T)
2 VB 2 (Vbi V )
1 2 T W= =
= (1 e ) eN D eN D
3 3
where V is anode to cathode applied potential.
2 T 1
e = A
3 3 CD =
2 (Vbi V )
where, = 3 × 104 cm–1, absorption coefficient
eN D
of Ge sample.
1 1 2
T = ln (2) = (Vbi V )
2 2
CD A eN D
1
= ln(2) cm 1
3 × 10 4 2
becomes zero at V = Vbi
CD
= 0.231 µm
 GATE Previous Years Solved Paper 37

From above graph, We know that,

1 xnND = xpNA
y = 2
= 0 at x1 = Vbi
CD ND xp
=
1 NA xn
and y2 = 2
= 4 × 10 20 at x1 = –0.2 V
CD ND
=2 xp = 2xn
y2 y1 4 × 10 20 NA
0
Slope = =
x2 x1 0.2 Vbi As, xn = 0.2 µm xp = 0.4 µm
Q Vbi is not provided, slope cannot be found. So, width of depletion region W = 0.6 µm,

67. (c) 2 (Vo + VR ) 1 1

W= +
q N A ND
(FF ) VOC I SC
= 14
Pin 0.6 × 10–4 =
2 × 12 × 8.85 × 10
19
(0.8 + VR ) 1
+
1
1.6 × 10 5 × 10 16 10 × 1016
0.8 × 0.7 × I SC
0.15 = 0.36 × 10 8 × 1.6 × 10 19 × 5 × 10 16
100 mW = (VR + 0.8)
2 × 12 × 8.85 × 10 14 × 1.5
15
ISC = mA VR = 8.2395 Volts
0.56
I SC 70. (c)
GL =
q × Area × Thickness NC
Given, (EC – EFn)1 = kT ln = 200 meV
15 × 10 3 N D1
= 19 4
0.56 × 1.6 × 10 × 1 × 200 × 10 ...(1)
15
= × 1019 NC
0.56 × 32 (EC – EFn)2 = kT ln ...(2)
N D2
= 0.837 × 1019/cm3/second
N D1 = 1016 cm–3
68. (d)
Relation between electric field and potential is N D2 = 0.5 × 1016 cm–3
given by
(EC – EFn)1 – (EC – EFn)2
d
E =
dx NC NC
= kT ln kT ln
N D1 N D2
d E
E = E Energy 200 meV – (EC – EFn)2
dx q
N D2
1 dE 1 = kT ln
E = = N D1
q dx q L
*Non-uniform doping in a semiconductor 1016 × 0.5
= 0.026 ln
results in built-in electric field. 1016
69. (8.2) = 0.026 ln(0.5)
NA = 5 × 1016 per cm3 = –0.01802 Volt
ND = 10 × 1016 per cm3 = –18.02 meV
(EC – EFn)2 = 200 meV + 18.02 meV
bi = 0.8 V
= 218.02 meV
38 Electronics Engineering Electronic Devices & Circuits

71. (0.59) At x = ln :
Equation (1) = Equation (2)
n(x) = R n = 1020 e x /ln n
ln
n(ln) = 1020 e–1 n ...(1) 1020 e–1 n = B 1
2 ln
ln x 2ln
Continuity equation in steady-state, B = 2 × 1020 e–1 n

2 x
Dn
n
+G R = 0 n(x) = 2 × 10 20 e 1 n 1
2 2 ln
x
G=0 ln x 2ln
Since, ln x 2ln Electron diffusion current density:
R=0
dn
2
n Jn diff. = qDn
Dn = 0 dx
x2
20 1 1
Whose solution is, = qDn × 2 × 10 × e × n 0
2ln
n(x) = Ax + B
19
Since at x = 2ln : 1.6 × 10 × ln2 × 2 × 10 20 × e 1
=
n(2ln) = 0 (Given) 2ln
0 = A(2ln) + B = 1.6 × 10–19 × ln × 1020 × e–1
B = 1.6 × 101 × 1 × 10–4 × e–1
A=
2 ln (ln = 10–4 cm)
= 0.588 mA/cm 2
B x
n(x) = x+B= B 1 = 0.59
2 ln 2ln
...(2)
 3 BJT and FET Basics

Q.1 In MOSFET devices the n-channel type is better Q.6 Channel current is reduced on application of a
than the P-channel type in the following respects more positive voltage to the GATE of the
(a) it has better noise immunity. depletion mode n-channel MOSFET.
(b) it is faster. (True/False)
(c) it is TTL compatible. [EC-1994 : 1 Mark]
(d) it has better drive capability.
Q.7 The breakdown voltage of a transistor with its
[EC-1988 : 2 Marks]
bass open is BVCEO and that with emitter open
Q.2 In a MOSFET, the polarity of the inversion layer is BVCBO, then
is the same as that of the
(a) BVCEO = BVCBO
(a) charge on the GATE-EC-electrode
(b) BVCEO > BVCBO
(b) minority carries in the drain
(c) BVCEO < BVCBO
(c) majority carriers in the substrate
(d) BVCEO is not related to BVCBO
(d) majority carriers in the source
[EC-1995 : 1 Mark]
[EC-1989 : 2 Marks]
Q.8 Match the following:
Q.3 Which of the following effects can be caused by
a rise in the temperature? List-I
(a) Increase in MOSFET current (IDS) A. The current gain of a BJT will be increased.
(b) Increase in BJT current (IC) B. The current gain of a BJT will be reduced.
(c) Decrease in MOSFET current (IDS) C. The break-down voltage of a BJT will be
(d) Decrease in BJT current (IC) reduced.
[EC-1990 : 2 Marks] List-II

Q.4 In a transistor having finite , forward bias 1. The collector doping concentration is
across the base emitter junction is kept constant increased.
and the reverse bias across the collector base 2. The base width is reduced.
junction is increased. Neglecting the leakage 3. The emitter doping concentration to base
across the collector base junction and the doping concentration ratio is reduced.
depletion region generations current, the base 4. The base doping concentration is increased
current will _____ (increase/decrease/remains
keeping the ratio of the emitter doping
constant).
concentration to base doping concentration
[EC-1992 : 2 Marks]
constant.
Q.5 The threshold voltage of an n-channel MOSFET 5. The collector doping concentration is
can be increased by reduced.
(a) increasing the channel dopant [EC-1994 : 2 Marks]
concentration.
(b) reducing the channel dopant concentration. Q.9 The transit time of a current carriers through
(c) reducing the GATE oxide thickness. the channel of an FET decides it ______
(d) reducing the channel length. characteristic.

[EC-1994 : 1 Mark] [EC-1994 : 1 Mark]

 40 Electronics Engineering Electronic Devices & Circuits

Q.10 A BJT is said to be operating in the saturation Q.15 The effective channel length of a MOSFET in
region if saturation decreases with increase in
(a) both the junctions are reverse biased. (a) gate voltage (b) drain voltage
(b) base-emitter junction is reverse biased and (c) source voltage (d) body voltage
base-collector junction is forward biased. [EC-2001 : 1 Mark]
(c) base-emitter junction is forward biased and
Q.16 For an n-channel enhancement type MOSFET,
base-collector junction is reverse biased.
if the source is connected at a higher potential
(d) both the junctions are forward biased. than that of the bulk (i.e. VSB > 0), the threshold
[EC-1995 : 1 Mark] voltage VT of the MOSFET will
Q.11 The early-effect in a bipolar junction transistor (a) remain unchanged
is caused by (b) decrease
(a) fast-turn-on (c) change polarity
(b) fast-turn-off (d) increase
(c) large collector-base reverse bias [EC-2003 : 1 Mark]
(d) large emitter-base forward bias Q.17 When the gate-to-source voltage (VGS) of a
[EC-1995; 1999 : 1 Mark] MOSFET with threshold voltage of 400 mV,
working in saturation is 900 mV, the drain
Q.12 If a transistor is operating with both of its
current is observed to be 1 mA. Neglecting the
junctions forward biased, but with the collector
channel width modulation effect and assuming
base forward bias greater than the emitter-base
that the MOSFET is operating at saturation, the
forward bias, then it is operating in the
drain current for an applied VGS of 1400 mV is
(a) forward active mode.
(a) 0.5 mA (b) 2.0 mA
(b) reverse saturation mode.
(c) 3.5 mA (d) 4.0 mA
(c) reverse active mode.
[EC-2003 : 2 Marks]
(d) forward saturation anode.
Q.18 If for a silicon n-p-n transistor, the base-to-
[EC-1996 : 2 Marks]
emitter voltage (VBE) is 0.7 V and the collector-
Q.13 In a bipolar transistor at room temperature, if to-base voltage (VCB) is 0.2 V, then the transistor
the emitter current is doubled, the voltage across is operating in the
its base-emitter junction (a) normal active mode
(a) doubles (b) saturation mode
(b) halves (c) inverse active mode
(c) increases by about 20 mV (d) cut-off mode
(d) decreases by about 20 mV [EC-2004 : 1 Mark]
[EC-1997 : 2 Marks]
Q.19 Consider the following statements S1 and S2:
Q.14 MOSFET can be used as a S1 : The of a bipolar transistor reduces if the
(c) current controlled capacitor. base width is increased.
(b) voltage controlled capacitor. S2 : The of a bipolar transistor increases if the
(c) current controlled inductor. doping concentration in the base is
(d) voltage controlled inductor. increased.
Which one of the following is correct?
[EC-2001 : 1 Mark]
 GATE Previous Years Solved Paper 41

(a) S1 is false and S2 is true. (c) the forward biasing of emitter-base junction.
(b) Both S1 and S2 are true. (d) the early removal of stored base charge
(c) Both S1 and S2 are false. during saturation-to-cut-off switching.
(d) S1 and true and S2 is false. [EC-2006 : 1 Mark]
[EC-2004 : 1 Mark]
Common Data Questions (24 to 26):
Q.20 Consider the following statements S1 and S2: The figure shows the high frequency capacitance
S1 : The threshold voltage (V T ) of a MOS voltage (C-V) characteristics of a Metal/SiO2/Silicon
capacitor decreases with increase in gate (MOS) capacitor having an area of 1 × 10–4 cm2. Assume
oxide thickness. that the permittivities ( 0 r) of silicon and SiO2 are
S2 : The threshold voltage (V T ) of a MOS 1× 10–12 F/cm and 3.5 × 10 –13 F/cm respectively.
capacitor decreases with increase in
substrate doping concentration. C
Which one of the following is correct? 7 pF
(a) S1 is false and S2 is true.
(b) Both S1 and S2 are true.
(c) Both S1 and S2 are false.
(d) S1 and true and S2 is false. 1 pF
V
0
[EC-2004 : 2 Marks]

Q.21 The drain of an n-channel MOSFET is shorted

Q.24 The gate oxide thickness in the MOS capacitor
to the gate so that VGS = VDS. The threshold
is
voltage (VT) of MOSFET is 1 V. If the drain
current (ID) is 1 mA for VGS = 2 V, then the (a) 50 nm (b) 143 nm
VGS = 3 V, ID is (c) 350 nm (d) 1 µm
(a) 2 mA (b) 3 mA [EC-2007 : 2 Marks]
(c) 9 mA (d) 4 mA Q.25 The maximum depletion layer width in silicon
[EC-2004 : 2 Marks] is
(a) 0.143 µm (b) 0.857 µm
Q.22 A MOS capacitor made using p-type substrate
is in the accumulation mode. The dominant (c) 1 µm (d) 1.143 µm
charge in the channel is due to the presence of [EC-2007 : 2 Marks]
(a) holes Q.26 Consider the following statements about the C-V
(b) electrons characteristics plot:
(c) positively charged ions S1 : The MOS capacitor has as n-type substrate.
(d) negatively charged ions S2 : If positive charges are introduced in the
[EC-2005 : 2 Marks] oxide, the C-V plot will shift to the left.
Then which of the following is true?
Q.23 The phenomenon known as “Early effect” in a
(a) Both S1 and S2 are true.
bipolar transistor refers to a reduction of the
(b) S1 is true and S2 is false.
effective base-width caused by
(c) S1 is false and S2 is true.
(a) effective-hole recombination at the base.
(a) Both S1 and S2 are false.
(b) the reverse biasing of the base-collector
[EC-2007 : 2 Marks]
junction.
 42 Electronics Engineering Electronic Devices & Circuits

Q.27 The drain current of MOSFET in saturation is (a) 450 cm2/V-s (b) 1350 cm2/V-s
given by ID = K(VGS – VT)2 where K is a constant. (c) 1800 cm2/V-s (d) 3600 cm2/V-s
The magnitude of the trans-conductance gm is [EC-2010 : 1 Mark]
2
K(VGS VT )
(a) (b) 2K(VGS – VT) Q.31 In a uniformly doped BJT, assume that NE, NB
VDS
and NC are the emitter, base and collector
ID K(VGS VT )2 dopings in atoms/cm3, respectively. If the
(c) V (d)
GS VDS VGS emitter injection efficiency of the BJT is close to
[EC-2008 : 1 Mark] unity, which one of the following conditions is
true?
Q.28 The measured trans-conductance g m of an
(a) NE = NB = NC
NMOS transistor operating in the linear region
(b) NE >> NB and NB > NC
is plotted against the gate voltage VG at a
constant drain voltage V D . Which of the (c) NE = NB and NB < NC
following figures represents the expected (d) NE < NB < NC
dependence of gm on VG? [EC-2010 : 2 Marks]

Q.32 For a BJT, the common-base current gain = 0.98

gm gm and the collector base junction reverse bias
(a) (b) saturation current ICO = 0.6 µA. This BJT is
connected in the common emitter mode and
VG VG
operated in the active region with a base drive
current IB = 20 µA. The collector current IC for
gm gm this mode of operation is
(c) (d) (a) 0.98 mA (b) 0.99 mA
(c) 1.0 mA (d) 1.01 mA
VG VG
[EC-2011 : 2 Marks]
[EC-2008 : 2 Marks]
Q.33 The source of a silicon (ni = 1010/cm3) n-channel
Q.29 Consider the following two statements about
MOS transistor has an area of 1 square µm and
the internal conditions in an n-channel
a depth of 1 µm. If the dopant density in the
MOSFET operating in the active region:
source is 1019/cm3, the number of holes in the
S1 : The inversion charge decreases from source
source region with the above volume is
to drain.
approximately.
S2 : The inversion charge increases from source
to drain. (a) 10 7 (b) 100
Which of the following is correct? (c) 10 (d) 0
(a) Only S2 is true. [EC-2012 : 2 Marks]
(b) Both S1 and S2 are false.
Common Data for Questions (34 and 35):
(c) Both S1 and S2 are true, but S2 is not a reason
for S1. In the three dimensional view of silicon n-channel MOS
(d) Both S1 and S2 are true, but S2 is a reason transistor shown below, = 20 nm. The transistor is of
for S1. width 1 µm. The depletion width formed at every p-n
[EC-2009 : 2 Marks] junctions is 10 nm. The relative permittivities of Si and
SiO 2 , respectively, are 11.7 and 3.9 and
Q.30 A room temperature, a possible value for the –12 F/m.
0 = 8.9 × 10
mobility of electrons in the inversion layer of a
silicon n-channel MOSFET is
 GATE Previous Years Solved Paper 43

Q.39 An ideal MOSFET capacitor has boron doping

1 µm
concentration of 1015 cm–3 in the substitute.
When a gate voltage is applied, a depletion
G
region of width 0.5 µm is formed with a surface
1 nm (channel) potential of 0.2 V. Given that,
D
–14 F/cm and the relative
0 = 8.854 × 10
0.2 µm
D S
0.2 µm permittivities of silicon and silicon dioxide are
12 and 4, respectively, the peak electric field
0.2 µm p substrate 0.2 µm
(in V/µm) in the oxide region is ______ .
B [EC-2014 : 2 Marks]

Q.34 The source body junction capacitance is Q.40 Consider two BJTs biased at the same collector
approximately current with area A1 = 0.2 µm × 0.2 µm and
(a) 2 fF (b) 7 fF A2 = 300 µm × 300 µm. Assuming that all other
(c) 2 pF (d) 7 pF device parameters are identical kT/q = 26 mV,
the intrinsic carrier concentrations is
[EC-2012 : 2 Marks]
1 × 1010 cm–3, and q = 1.6 × 10–19 C, the difference
Q.35 The gate source overlap capacitance is between the base-emitter voltages (in mV) of the
approximately two BJTs (i.e., VBE1 – VBE2) is ________ .
(a) 0.7 fF (b) 0.7 pF [EC-2014 : 2 Marks]
(c) 0.35 fF (d) 0.24 pF
[EC-2012 : 2 Marks]
Q.41 For the MOSFET in the circuit shown, the
Q.36 A BJT is biased in forward active mode. Assume
threshold voltage is VTh, where VTh > 0. The
VBE = 0.7 V, kT/q = 25 mV and reverse saturation
source voltage VGS is varied from 0 to VDD.
current Is = 10–13 mA. The trans-conductance of
Neglecting the channel length modulation, the
the BJT (in mA/V) is _______ .
drain current I D as a function of V SS is
[EC-2014 : 2 Marks]
represented by
Q.37 A depletion type N-channel MOSFET is biased VDD
in its linear region for use as a voltage controlled
resistor. Assume threshold voltage,
VTH = –0.5 V, VGS = 2.0 V, VDS = 5. V, W/L = 100,
Cox = 10–8 F/cm2 and µn = 800 cm2/V-s. The
value of the resistance of the voltage controlled
resistor (in ) is _______ .
Vss
[EC-2014 : 2 Marks]

Q.38 The slope of the ID vs VGS curve on an n-channel

MOSFET in linear region is 10 –3 –1 at ID
VDS = 0.1 V. For the same device, neglecting
channel length modulation, the slope of the
(a)
I D vs VGS ( A /V ) under saturation region

is approximately ______ .
Vss
[EC-2014 : 2 Marks] VDD – VTh
 44 Electronics Engineering Electronic Devices & Circuits

ID Q.45 If the base width in a bipolar junction transistor

is doubled, which one of the following
statements will be true?
(b) (a) Current gain will increase.
(b) Unity gain frequency will increase.
Vss (c) Emitter base junction capacitance will
VTh increase.
ID (d) Early voltage will increase.
[EC-2015 : 1 Mark]

Q.46 An n-p-n BJT having reverse saturation current

(c)
Is = 10–15 A is biased in the forward active region
with VBE = 700 mV. The thermal voltage (VT) is
Vss 25 mV and the current gain ( ) may vary from
VDD – VTh
50 to 150 due to manufacturing variations. The
ID maximum emitter current (in µA) is ______ .
[EC-2015 : 2 Marks]

(d) Q.47 Consider the following statements for a Metal

Oxide Semiconductor Field Effect Transistor
Vss (MOSFET):
VDD – VTh
P : As channel length reduces, OFF-state
[EC-2015 : 2 Marks] current increases.
Q.42 A MOSFET in saturation has a drain current of Q : As channel length reduces, output
1 mA for VDS = 0.5 V. If the channel length resistance increases.
modulation coefficient is 0.05 V–1, the output R : As channel length reduces, threshold
resistance (in k ) of the MOSFET is _______ . voltage remains constant.
[EC-2015 : 2 Marks] S : As channel length reduces, ON current
increases.
Q.43 In MOS capacitor with an oxide layer thickness Which of the above statements are incorrect?
of 10 mm. The maximum depletion layer
(a) P and Q (b) P and S
thickness is 100 mm. The permittivities of the
(c) Q and R (d) R and S
semiconductor and the oxide layer are s and ox
[EC-2016 : 1 Mark]
respectively. Assuming s/ ox = 3 the ratio of the
maximum capacitance to the minimum Q.48 Consider an n-channel metal oxide semi-
capacitance of this MOS capacitor is ______ . conductor field effect transistor (MOSFET) with
[EC-2015 : 2 Marks] a gate-to-source voltage of 1.8 V. Assume that
W/L = 4, µnCox = 70 × 10–6 AV–2, the threshold
Q.44 The current in an enhancement mode NMOS voltage is 0.3 V, and the channel length
transistor biased in saturation mode was modulation parameter is 0.09 V –1 . In the
measured to be 1 mA at a drain source voltage saturation region, the drain conductance (in µS)
was increased to 6 V while keeping gate source is ______ .
voltage same, the drain current increased to [EC-2016 : 2 Marks]
1.02 mA. Assume that drain to source saturation
voltages is much smaller than the applied drain Q.49 A long channel N-MOS transistor is biased in
source voltage. The channel length modulation the linear region with VDS = 50 mV and is used
parameter (in V–1 ), is _______ . as a resistance. Which one of the following
[EC-2015 : 2 Marks] statements is not correct?
 GATE Previous Years Solved Paper 45

(a) If the device width ‘W’ is increased, the (a) inversion (b) accumulation
resistance decreases. (c) depletion (d) flat band
(b) If the threshold voltage is reduced, the [EC-2016 : 1 Mark]
resistance decreases.
(c) If the device length ‘L’ is increased, the Q.53 Figures I and II show two MOS capacitors of
resistance increase. unit area. The capacitor in Fig. (I) has insulator
(d) If VGS is increased, the resistance increases. materials X (of thickness t1 = nm and dielectric
[EC-2016 : 1 Mark] constant 1 = 4) and Y (of thickness t2 = 3 nm
and dielectric constant 2 = 20). The capacitor
Q.50 A voltage VG is applied across a MOS capacitor
in Fig. (II) has only insulator material X of
with metal gate and p-type silicon substrate at
thickness tEq. If the capacitors are of equal
T = 300 K. The inversion carrier density
capacitance, then the value of tEq (in nm) is
(in number of carriers per unit area) for VG = 0.8 V
_________ .
is 2 × 1011 cm–2. For VG = 1.3 V, the inversion
carrier density is 4 × 1011 cm–2. What is the value
Metal
of the inversion carrier density for VG = 1.8 V?
t2 2
(a) 4.5 × 1011 cm–2 (b) 6.0 × 1011 cm–2
t1 1
(c) 7.2 × 1011 cm–2 (d) 8.4 × 1011 cm–2
[EC-2016 : 2 Marks] Si

Q.51 Consider a long channel NMOS transistor with

Figure-I
source and body connected together. Assume
that the electron mobility is independent of VGS
and VDS. Given: gm = 0.5 µA/V for VDS = 50 mV Metal
and VGS = 2 V, gd = 8 µA/V for VGS = 2 V and 1 tEq
VDS = 0 V where,
ID ID
gm = and gd = Si
VGS VDS
The threshold voltage (in Volts) of the transistor
is _______ . Figure-II
[EC-2016 : 2 Marks]
[EC-2016 : 2 Marks]
Q.52 The figure shows the band diagram of a Metal
Q.54 The injected excess electron concentration
Oxide Semiconductor (MOS). The surface region
profile in the base region of an n-p-n BJT, biased
of this MOS is in,
in the active region, is linear, as shown in the
figure. If the area of the emitter base junction is
0.001 cm2, µn = 800 cm2/(V-s) in the base region
and depletion layer widths are negligible, then
SiO2
the collector current I C (in mA) at room
EM temperature is (Given: thermal voltage,
B EC VT = 26 mV at room temperature, electronic
EFS
B charge, q = 1.6 × 10–19 C).
Ei

EV
 46 Electronics Engineering Electronic Devices & Circuits

Q.57 Consider an n-channel MOSFET having width

IB
W, length L, electron mobility in the channel mn
n p n
14 and oxide capacitance per unit area Cox. If gate-
10 cm–3
Excess to-source voltage VGS = 0.7 V drain-to-source
electron
IE
profile
IC voltage VDS = 0.1 V. (µn Cox) = 100 µA/V2,
threshold voltage VTh = 0.3 V and (W/L) = 50,
then the trans-conductance gm (in mA/V) is
________. [EC-2017 : 1 Mark]
0
0.5 µm Q.58 Two n-channel MOSFETs, T1 and T2 are
[EC-2016 : 2 Marks] identical in all respects except that the width of
T2 is double that of T1. Both the transistors are
Q.55 For a narrow base PNP BJT, the excess minority biased in the saturation region of operation, but
carrier concentrations ( nE for emitter, pB for the gate overdrive voltage (VGS – VTH) of T2 is
base, n C for collector) normalized to double that of T1, where VGS and VTH are the
equilibrium minority carrier concentrations gate-to-source voltage and threshold voltage of
(nE0 for emitter, pB0 for base, nC0 for collector) in the transistors, respectively. If the drain current
the quasi-neutral emitter, base and collector and transconductance of T1 are ID1 and gm1
regions are shown below. Which one of the respectively, the corresponding values of these
following biasing modes is the transistor two parameters for T2 are
operating in?
(a) 8 ID1 and 2 gm1 (b) 8 ID1 and 4 gm1
(c) 4 ID1 and 4 gm1 (d) 4 ID1 and 2 gm1
PB 5
10
carrier concentration

[EC-2017 : 2 Marks]
Normalized excess

PB0

Q.59 A MOS capacitor is fabricated on p-type Si

nC
nC 0
(Silicon) where the metal work function is 4.1 eV
0
and electron affinity of Si is 4.0 eV. EC – EF = 0.9 eV,
nE
where EC and EF are the conduction band
nE0 1
minimum and the Fermi energy levels of Si
Emitter (P) Base (N) Collector (P)
respectively. Oxide r = 3.9, o = 8.85 × 10–14 F/cm,
(a) Forward active (b) Saturation oxide thickness tox = 0.1 µm and electronic
(c) Inverse active (d) Cut-off charge q = 1.6 × 10–19 C. If the measured flat band
[EC-2017 : 1 Mark] voltage of this capacitor is –1 V, then the
magnitude of the fixed charge at the oxide
Q.56 An n-p-n bipolar junction transistor (BJT) is
semiconductor interface, (in nC/cm2), is _____ .
operating in the active region. If the reverse bias
across the base-collector junction is increased, [EC-2017 : 2 Marks]
then Q.60 The figure shows the high frequency C-V curve
(a) the effective base width increases and of a MOS capacitor (at T = 300 K) with ms = 0 V
common-emitter current gain increases. and no oxide charges. The flat band, inversion,
(b) the effective base width increases and and accumulation conditions are represented,
common-emitter current gain decreases. respectively, by the points.
(c) the effective base width decreases and C
common-emitter current gain increases. Q
P
(d) the effective base width decreases and
common-emitter current gain decreases. R
[EC-2017 : 1 Mark]
VG
0
 GATE Previous Years Solved Paper 47

(a) Q, R, P (b) P, Q, R
17 –3
10 (cm )
(c) Q, P, R (d) R, P, Q
[EC-2019 : 1 Mark] NB(x)

Q.61 Consider a long channel MOSFET with a 14 –3

10 (cm )
channel length 1 µm and width 10 µm. The
device parameters are acceptor concentration Emitter Base Collector
0 W
N A = 5 × 10 16 cm –3 , electron mobility
µn = 800 cm 2/V-s, oxide capacitance/area (a) approximately 0.3 times that of T1
Cox = 3.45 × 10 –7 F/cm2, threshold voltage (b) approximately 0.7 times that of T1
VT = 0.7 V. The drain saturation current (IDsat) (c) approximately 2.5 times that of T1
for a gate voltage of 5 V is ______ mA (rounded (d) approximately 2.0 times that of T1
off to two decimal places). [EC-2020 : 2 Marks]
[ o = 8.854 × 10–14 F/cm, Si = 11.9]
Q.64 For an n-channel silicon MOSFET with 10 nm
[EC-2019 : 2 Marks]
gate oxide thickness, the substrate sensitivity
Q.62 The band diagram of a p-type semiconductor ( VT / VBS ) is found to be 50 mV/V at a
with a bandgap of 1 eV is shown. Using this
substrate voltage VBS = 2 V, where VT is the
semiconductor, a MOS capacitor having VTh of
threshold voltage of the MOSFET. Assume that,
–0.16 V, C ox of 100 nF/cm2 and a metal work
VBS >> 2 B, where q B is the separation
function of 3.87 eV is fabricated. There is no
between the Fermi energy level EF and the
charge within the oxide. If the voltage across
intrinsic level Ei in the bulk. Parameters given
the capacitor is VTh. The magnitude of depletion
are:
charge per unit area (in C/cm2) is
Electron charge (q) = 1.6 × 10–19 C
Vacuum level Vacuum permittivity ( 0) = 8.85 × 10–12 F/m
Relative permittivity of silicon ( si) = 12
Relative permittivity of oxide ( ox) = 4
4 eV
The doping concentration of the substrate is
(a) 4.37 × 1015 cm–3 (b) 7.37 × 1015 cm–3
EC (c) 2.37 × 1015 cm–3 (d) 9.37 × 1015 cm–3
0.5 eV [EC-2021 : 2 Marks]
Ei
Q.65 An ideal MOS capacitor (p-type) semiconductor)
EFS
0.2 eV is shown in the figure. The MOS capacitor is
EV
under strong inversion with VG = 2 V. The
(a) 0.52 × 10–8 (b) 0.93 × 10–8 corresponding inversion charge density (Qin) is
(c) 1.41 × 10–8 (d) 1.70 × 10–8 2.2 µC/m2. Assume oxide capacitance per unit
area as Cox = 1.7 µF/cm2. For VG = 4 V, the value
[EC-2020 : 2 Marks]
of Qin is _______ µC/cm2 (Rounded off to one
Q.63 The base of an n-p-n BJT T1 has a linear doping decimal place).
profile NB(x) as shown below. The base of Metal Oxide Semiconductor

another n-p-n BJT T2 has a uniform doping NB

of 1017 cm–13. All other parameters are identical VG

for both the devices. Assuming that the hole

density profile is the same as that of doping, the [EC-2022]
common-emitter current gain of T2 is
48 Electronics Engineering Electronic Devices & Circuits

Answers BJT and FET Basics

1. (b) 2. (d) 3. (b, c) 4. Sol. 5. (b) 6. (False) 7. (c) 8. (A-2, B-3, C-1)
9. Sol. 10. (d) 11. (c) 12. (b) 13. (c) 14. (b) 15. (b) 16. (d)
17. (d) 18. (a) 19. (d) 20. (d) 21. (d) 22. (a) 23. (b) 24. (a)
25. (b) 26. (c) 27. (b) 28. (c) 29. (d) 30. (b) 31. (b) 32. (d)
33. (d) 34. (a) 35. (a) 36. (5.76) 37. (500) 38. (0.0707)39. (2.4) 40. (380.28)
41. (a) 42. (20) 43. (4.33) 44. (0.02) 45. (d) 46. (1475) 47. (c) 48. (28.35)
49. (d) 50. (b) 51. (1.2) 52. (a) 53. (1.6) 54. (6.656) 55. (c) 56. (c)
57. (0.5) 58. (b) 59. (6.903) 60. (a) 61. (25.52) 62. (d) 63. (*) 64. (b)
65. (5.6)

Solutions
BJT and FET Basics
1. (b) 4. Sol.
n-channel MOSFET is faster than the p-channel (Decreases)
MOSFET. As the reverse bias increase at CB (collector base)
junction then the collector current (IC) increases
Mobility of electrons is always higher than the
and the effective base width decreases, so the
mobility of holes,
recombination in base decreases.
µn > µp
In n-channel the charge carriers are electrons 5. (b)
whereas in p-channel MOSFET the charge For the NMOS threshold voltage is given by
carriers are holes. VT = VTO + [ 2 f + VSB 2 ]
f

2. (d) 2 qN A tox 2qN A

s s
= =
In a MOSFET, the polarity of the inversion layer C ox 3.45 × 10 11

is the same as that of the majority carriers in the So, the threshold voltage of an n-channel
source. MOSFET can be increased by reducing the
channel dopant concentration.
3. (b, c)
IC = Ib + (1 + ) ICO 6. Sol.
as temperature increases, ICO increases, so the (False)
current (I C ) increases in BJT with rise in For depletion mode n-channel MOSFET, if the
temperature. GATE terminal is made more positive then the
Q mobility decreases as temperature increases, channel becomes more and more n-type hence
T µ the drain current will increase.
So, in MOSFET, current (IDS) decreases with rise 7. (c)
in temperature, The relationship between open base breakdown
T IDS voltage (BVCEO) of BJT with open emitter voltage
(BVCBO) is given by
 GATE Previous Years Solved Paper 49

1 12. (b)
VBCEO = BVCBO
In a transistor when both the junction (JC and JE)
Q >1 are forward bias and if collector junction voltage
So, BVCEO < BVCBO is greater than emitter junction voltage then this
transistor is in reverse saturation region.
8. Sol.
13. (c)
(A-2, B-3, C-1)
• As the base width of the BJT is reduced then Ie = I o eVbe / VT 1
the recombination current (base current IB)
V / VT
decreases as a result collector current (IC) I o e be2 1
2I 1
increases. So, the current gain of the BJT = V / VT
I1 I o e be1 1
increases,
I 2
V
e be2
/ VT
= C 1
E = V / VT
1 e be1 1
• If the emitter doping concentration to base
Vbe2 / VT >>1
doping concentration ratio is reduced then e
the emitter injection efficiency decreases, so Vbe1 / VT >>1
e
the current gain ( ) of BJT reduces. Vbe / VT
e 2
• If the collector doping concentration is =2
Vbe / VT
e 1
increased then the breakdown (VBR) of a BJT
will be reduced. (Vbe2 Vbe1 ) VT =2
e
9. Sol. Vbe2 Vbe1
= ln2
The transit of a current carriers through the VT
channel of an FET decides its switching Vbe2 Vbe1 = VT (0.693)
characteristics. Take, =1
Vbe2 Vbe1 = 1 × 0.026 × 0.693
10. (d)
Vbe2 Vbe1 = 18 mV
Both the junctions are forward biased.
When emitter base (E-B) junction and collector 14. (b)
base (C-B) junction both are forward biased then
Voltage controlled capacitor.
the BJT is said to be operating in saturation
region. 15. (b)
As the edge of saturation i.e. when drain to
11. (c)
source voltage reaches VDsat the inversion layer
The process where the effective base width of charge at the drain end becomes zero (ideally).
the transistor is altered by varying the collector The channel is said to be pinched-off at the drain
junction voltage is called base width end. If the drain to source voltage V DS is
modulation of early effect. In a transistor by increased even further beyond the saturation
changing the collector junction voltage, is seen edge so that VDS > VDsat, an even larger portion
that the base width of the transistor is altered of the channel becomes pinched-off and effective
and this property is called as early effect. channel length is reduced.
50 Electronics Engineering Electronic Devices & Circuits

16. (d) 21. (d)

ID = K(VGS – VT)2
VT = VTO + 2 F + VSB 2 F
1 mA = K(2 – 1)2
= substrate bias coefficient K = 1 mA/V2
VSB = substrate bias voltage Again, ID = K(VGS – VT)2 = 4 mA
17. (d) 22. (a)
ID = K(VGS – VT)2 In accumulation mode for NMOS having
1 mA = K(900 – 400)2 p-substrate VG is –ve. When negative VG is
1 mA/V 2 applied to the gate electrode, the holes in the
K=
10 4 × 25 p-type substrate are attached to the
when, VGS = 1400 mV semiconductor oxide interface. This condition
ID = K(VGS – VT)2 is called carrier accumulation on the surface.
1 mA
= (1400 400)2 V 2 24. (a)
25 × 10 4 V 2
A
1 mA × 100 4 C=
= × 10 d
25 × 10 4
ID = 4 mA A 3.5 × 10 13 × 10 4 × 10 4
d = =
C 7 × 10 12 × 10 2
19. (d) = 5 × 10–8 m = 50 nm
IC
= = 25. (b)
IB 1
si = 10–12 F/cm
When base width increases, recombination in
= 10–10 F/cm
base region increase and decreases and hence
decreases. Cmax C d
Cmin =
If doping in base region increases, then Cmax + C d
recombination in base increases and a decreases Cmax Cmin
Cd =
thereby decreasing . Cmax Cmin

20. (d) 7×1

Cd = = 1.166 pF
7 1
S2 : VT of N-MOS is increased by adding extra
si A
p-type impurities i.e. VT of a MOS increases Cd =
w
by increase in substrate doping
concentration. (True) 10 10 × 10 4 × 10 4
w=
1.166 × 10 12
S1 : C ox = ox ; tox =gate oxide thickness
tox = 0.857 µm

QR Qox 27. (b)

VT = GC 2 F
C ox C ox
id
gm =
Q Q VGS
If Cox increases B and ox decreases VDS
C ox Cox
K (VGS VT )2
and VT increases. =
VGS
Cox decreases when tox increases.
= 2K(VGS – VT)
 GATE Previous Years Solved Paper 51

28. (c) 34. (a)

ID is given by, Source body junction capacitor,
2 A A
VDS Cj = = o r
ID = Kn (Vgs Vt ) VDS d d
2
Here, r= 11.7 as there is Si only
– in linear region A= 1 µm × 0.2 µm
ID = 0.2 × 10–12 m2
and gm = at constant VDS
Vgs d = depletion width of p-n junction
d = 10 nm = 10–8 m
ID
gm = = K n (VGS Vt ) VDS
Vgs 8.9 × 10 12 × 11.7 × 0.2 × 10 12
So, Cj =
10 8
gm VGS
So, linear relation. C j = 2.082 × 10–15 F
C j 2 fF
31. (b)
35. (a)
1
= Gate source capacitance Cg is,
N
1+ B A1
NE 1 A1 =
o r1
Cg =
d1 d1
To achieve, =1
NE >> NB r1 = 3.9 as between gate and source there is

32. (d) SiO2,

IC = IB + (1 + ) ICO A1 = 1 µm ×
= 1 × 10–6 × 20 × 10–9
0.97
= = = 49 = 2 × 10–14 m2
1 1 0.98
d1 = 1 nm = 10–9 m
IC = 49 × 20 + 50 × 0.6
= 980 + 30 = 1010 µA 8.9 × 10 12 × 3.9 × 2 × 10 14
So, Cg =
or, IC = 1.01 mA 10 9
Cg = 69.42 × 10–17 F
33. (d)
Cg = 0.69 × 10–15 = 0.7 F
ni = 1010/cm3
A = 1 × 10–12 m2 36. Sol.
d = 10–6 m We know that,
V = Ad = 10–18 m3 IC
= 10–12 cm3 gm =
VT
ND = n = 1019/cm3
VBE
ni2 10 20 IC = Is e
VT
p = = 19 = 10/cm 3 where,
N D 10
0.7
So, holes in volume V is, 13
So, IC = 10 × e 0.025
H = pV = 10–11 = 0.144 mA
Since, holes number can not be a decimal
0.144
number. Hence, gm = = 5.76 mA/V
0.025
So, H=0
52 Electronics Engineering Electronic Devices & Circuits

37. Sol. VBE1

IC1 = Is exp ...(i)
Voltage controlled resistance rDS is given by 1 VT
1 VBE2
rDS =
W IC2 = Is2 exp ...(ii)
(µnC ox ) (VGS VT ) VT
L
According to given condition,
1
rDS =
800 × 10 8
× 100 × (2 + 0.5) IC1 = IC
2
= 500 VBE1 VBE2
Is1 exp = Is2 exp
38. Sol. VT VT
We known that for linear region, I s2
2
VBE1 VBE2 = VT ln
VDS I s1
ID = Kn (VGS VT )VDS
2
300 × 300
VBE1 VBE2 = 26 ln
ID 0.2 × 0.2
= Kn VDS
VGS Q = 2 for Si BJT
3
10 VBE1 VBE2 = 380.28 mV
= Kn
0.1
i.e., Kn = 10 –2 41. (a)
and for saturation region, VGS = VDS
Kn Hence MOS transistor is in saturation.
ID = (VGS VT )2
2 In saturation, ID = K(VGS – VT)2
Kn = K(VDD – VSS – VT)2
ID = (VGS VT )
2 As, VSS increases ID decreases
ID (Note linearly because square factor)
Kn
= Hence option (a) is correct.
VGS 2
42. Sol.
ID 10 2 A
So, = = 0.0707 Under channel length modulation,
VGS 2 V
ID = IDsat (1 + VDS)
39. Sol. dI D 1
= = IDsat
Peak electric field in the oxide region is, dVDS ro

Eox =
s
Es 1 1
ro = = = 20 k
ox I Dsat 0.05 × 10 3
0.2 × 2
and Es = = 0.8 V/µm 43.. Sol.
0.5
12 Cmax ox /tox X d max ox
Eox = × 0.8 = 2.4 V/µm = = 1+ ×
4 Cmin ox s tox
× s
tox X d max
40. Sol.
ox + s
IC is given by, tox X d max
VBE 100 1
IC = Is exp = 1+ × = 4.33
VT 10 3
 GATE Previous Years Solved Paper 53

44. Sol. On solving,

VT = 0.3 V
ID 0.02 mA
= = = 0.02 Now consider,
ID VDS 1 mA × 1 V
VG 2 VT Q
= 2
45. (d) VG 3 VT Q3
WB doubled (increased) early effect is still
present but its effect less severe relative to
1.3 0.3 4 × 1011
=
1.8 0.3 Q3
previous WB. Slope IC versus VCE decreases.
Inverse charge density with VG = 1.8 V
46. Sol.
Q3 = 6 × 1011/cm2
IC = Is eVBE /VT
51. Sol.
+1 +1 Since VGS > VDS, MOSFET is in linear operation,
IE = IC = I s eVBE /VT
ID = K N [VGS VT ] VDS
IE will be maximum when is 50
dID
700×10 3
= K NVDS
dVGS
9 6
= (1.02) (10 × 10 ) e 25×10 3
gm = K NVDS
= 1475 µA
0.5 × 10–6 = K N [50 × 10 3 ]
48. Sol.
K N = 10 5
In the saturation region,
g d = IDS ID = K N [VGS VT ]VDS
1 W dI D
= µnC ox (VGS VT )2 = K N [VGS VT ]
2 L dVDS
g d = 28.35 µs g d = K N [VGS VT ]
49. (d) 8 × 10–6 = 10–5 [2 – VT]
On solving, VT = 1.2 V
1
rds =
W 52. (a)
µ oC ox (VGS VT )
L Substrate is N-type SC.
rds = channel resistance
W r A correct 53. Sol.
VT r B correct From the Fig. (I)
L r C correct Both the capacitors C1 and C2 are in series.
VGS r Q D wrong statement Total capacitance,
C1C 2
50. (b) C=
C1 + C 2
In a MOS-capacitor,
(VG1 – VT) Q A 1 A 2 A × 4 A × 20
(VG 1 VT ) Q t1 t2 10 9 3 × 10 9
= 1 C= =
A 1 A 2 A × 4 A × 20
(VG 2 VT ) Q2 + +
t1 t2 10 9 3 × 10 9
0.8 VT 2 × 10 11
= C = 2.5 × 109 × A
1.3 VT 4 × 10 11
54 Electronics Engineering Electronic Devices & Circuits

From Fig. (II), W

So, gm = 2 KnVDS = µnC ox VDS
A L
C=
t eq = 100 × 50 × 0.1 mA/V
Since both capacitors must be equal in Fig. (I) = 0.5 mA/V
and (II),
58. (b)
A× 4
2.5 × 109 ×A = W2 = 2 W
t eq
VGS2 VT2 = (VGS1 VT1 )
teq = 1.6 nm
2
54. Sol. I D2 W2 VGS2 VT2
= ×
I D1 W1 VGS1 VT1
dn
IC = AqDn where, Dn = µnVT
dx = 2×4=8
19 3 10 14 ID2 = 8ID1
= 0.001(1.6 × 10 ) 800 × 26 × 10 4
0.5 × 10 gm2 W2 VGS2 VT2
= × = 2×2 = 4
= 66.56 × 10–4 A gm1 W1 VGS1 VT1
= 6.656 mA
gm2 = 4 gm1
55. (c)
Emitter-base junction (JE) is in RB. 59. Sol.
Collector-base junction (JC) is in FB. EVac EVac
Hence, inverse active mode.
e m e s e
56. (c)
EFm EC
When a BJT is in active region, as the reverse bias Metal 0.9 eV
voltage across collector-base junction increased, EFP
Semiconductor
the width of depletion region increases, which
(Isolated case)
results in decrease of effective base width. This
e m = 4.1 eV
decrease in effective base width reduces the
e = 4 eV
recombinations in base region, hence, common-
EC – EFP = 0.9 eV
emitter current gain will increase.
e s = e + 0.9 = 4.9 eV
57. Sol. m = 4.1 V

Given that: VGS = 0.7 V, VTH = 0.3 V, s = 4.9 V

VDS = 0.1 V ms = m – s = 4.1 – 4.9 = –0.8 V

VGS – VTH = 0.4 > VDS 14

ox 3.9 × 8.85 × 10
Cox = =
MOSFET is in linear region. tox 0.1 × 10 4
In linear region, = 34.515 × 10–9 F/cm2
2
ID = Kn 2(VGS VTH )VDS VDS ox
VFB = ms
C ox
Transconductance,
ox
ID = –0.8 + 1 = 0.2 V
gm = = 2 KnVDS C ox
VGS
ox = 0.2 × Cox
K W µ C W
Kn = n = n ox = 0.2 × 34.515 × 1019 C/cm2
2 L 2 L
= 6.903 nC/cm2
 GATE Previous Years Solved Paper 55

60. (a)
VT = VTO + VBS + 2 B 2 B
Since, ms = 0
The MOS capacitor is ideal. VTO = VT V = 0
BS
Point P represents accumulation
Point Q represents flat band 2 qN A s
= Body effect parameter
Point R represents inversion C ox
Since,
61. Sol.
1 W VBS >>2 B
ID(sat) = µnC ox (VGS VT )2
2 L
VT VTO + VBS
1 7 10 2
= × 800 × 3.45 × 10 × (5 0.7) A
2 1 VT 1
=
= 25.5162 mA 25.52 mA VBS 2 VBS

62. (d) 1
50 × 10–3 =
MOS capacitance, 2 2

m = 3.87, s = 4.8, ms = –0.93 = 2 2 × 50 × 10 3

Qox Qd
VT = ms +2 Fp = 141.42 × 10 3
V
C ox C ox
14
= Ei – EF = 0.5 – 0.2 = 0.3 ox 4 × 8.85 × 10
Fp Cox = = 7
Qd tox 10 × 10
–0.16 = 0.93 0 + 2 × 0.3
C ox = 3.54 × 10–7 F/cm2
Qd 2qN A s
= 0.6 + 0.16 – 0.93 = –0.17 =
C ox C ox
Qb = –0.17 × Cox = –0.17 × 100 × 10–9 2 2
Cox
= –1.7 × 10–8 C/cm2 NA =
2q s
3 2 7 2
63. ( ) (141.42 × 10 ) × (3.54 × 10 )
NA = 19 14
W
2 × 1.6 × 10 × 12 × 8.85 × 10
N A2 ( x ) dx = 7.37 × 1015 per cm3
1 0
= W 65. (5.6)
2
N A1 ( x ) dx Qin = Cox(VGS – VT) or Cox(VG – VT)
0
Qin
W × 1017 2 × 1017
= VG – VT
= 2 C ox
= 1
× W × (1017 1014 ) 1017 + 1014
2 Qin 2.2
VT = VG =2 = 2 1.294
C ox 1.7
2 = 0.5 1
Hence no option is matching. = 0.706 Volt
Now, Qin at
64. (b)
VG = 4V
tox = 10 nm Qin = Cox(VG – VT)
VT = 1.7 × 10–6 × (4 – 0.706)
= 50 mV/V
VBS Qin = 5.5998 µC/cm2 5.6 µC/cm2

VBS = 2 V, VBS >> 2 B

 GATE-2023
Electronics Engineering

Communication Systems
Chapterwise & Topicwise

Contents
S.No. Topic Page No.

1. Analog Communication Systems .................................................................................................. 1-23

2. Random Signals and Noise ........................................................................................................... 24-51

3. Digital Communication Systems ................................................................................................ 52-86

4. Information Theory & Coding ...................................................................................................... 87-97