JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23
S9015 TRANSISTOR (PNP)

FEATURES
1. BASE
z Complementary to S9014 2. EMITTER
3. COLLECTOR

MARKING: M6

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.1 A
PC Collector Power Dissipation 0.2 W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 -45 V

Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V

Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 μA

Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA

DC current gain hFE VCE=-5V, IC= -1mA 200 1000

Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V

Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V

VCE=-5V, IC= -10mA

Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE
Rank L H
Range 200-450 450-1000

B,Dec,2011
 Typical Characterisitics S9015
Static Characteristic hFE —— IC
-8 1000
COMMON
EMITTER Ta=100℃
Ta=25℃
-20uA
(mA)

-6 -18uA
Ta=25℃

hFE
-16uA
IC

-14uA

DC CURRENT GAIN
COLLECTOR CURRENT

-12uA
-4 100
-10uA

-8uA
-6uA
-2

-4uA
COMMON EMITTER
IB=-2uA VCE= -5V
-0 10
-0 -2 -4 -6 -8 -0.1 -1 -10 -100

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
-1 -2
COLLECTOR-EMITTER SATURATION

-1
Ta=25℃
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
VOLTAGE VCEsat (V)

Ta=100℃
-0.1

Ta=100℃

Ta=25℃

β=10 β=10
-0.01 -0.1
-0.2 -1 -10 -100 -0.2 -1 -10 -100

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE fT —— IC
-100 1000
(MHz)
(mA)

Ta=100℃
-10
fT
IC

TRANSITION FREQUENCY
COLLECTOR CURRENT

100

Ta=25℃
-1

COMMON EMITTER
VCE=-5V
COMMON EMITTER
VCE=-5V Ta=25℃
-0.1 10
-0.0 -0.3 -0.6 -0.9 -1.2 -0.1 -1 -10 -100

BASE-EMMITER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)

Cob/ Cib —— VCB/ VEB PC —— Ta

30 250

f=1MHz
IE=0/IC=0
Ta=25 ℃ 200
COLLECTOR POWER DISSIPATION

Cib
(pF)

10

150
C

PC (mW)

Cob
CAPACITANCE

100

50

1 0
-0.1 -1 -10 -20 0 25 50 75 100 125 150

REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta (℃ )

B,Dec,2011