Silicon N-Channel Power MOSFET ○

CS10J65 A4

General Description： VDSS 650 V

CS10J65 A4, the silicon N-channel Enhanced MOSFETs, ID 10 A
is obtained by the super junction technology which reduces the PD(T C=25℃) 62 W
conduction loss, improve switching performance and enhance the RDS(ON)max 0.62 Ω

avalanche energy. The transistor can be used in various power

switching circuit for system miniaturization and higher
efficiency.The package type is TO-252, which accords with the
RoHS standard.

Features：
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
l Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：

Symbol Parameter Rating Units

VDSS Drain-to-Source Voltage 650 V
ID Continuous Drain Current 10 A
a1
IDM Pulsed Drain Current 30 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 50 mJ
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
PD Power Dissipation 62 W
TJ，T stg Operating Junction and Storage Temperature Range –55…+150 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 650 -- -- V
VDS = 650V, V GS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =520V, V GS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =3A -- 0.54 0.62 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.5 4 V

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Transconductance VDS=10V, ID =3A -- 5.6 -- S
C iss Input Capacitance -- 450 --
VGS = 0V V DS = 50V
C oss Output Capacitance f = 1.0MHz -- 63 -- pF
C rss Reverse Transfer Capacitance -- 3.7 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 14 31
tr Rise Time ID = 7 A VDD = 300V -- 32 66
RG =25Ω ns
td(OFF) Turn-Off Delay Time -- 53 109
tf Fall Time -- 15 32
Qg Total Gate Charge -- 10 --
ID = 7 A V DD =480V
Qgs Gate to Source Charge VGS = 10V -- 2 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 3.7 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- 10 A
ISM Maximum Pulsed Current (Body Diode) -- 20 A
VSD Diode Forward Voltage IS =7A,V GS =0V -- 0.9 1.2 V
trr Reverse Recovery Time IF =I S -- 400 ns
IF /dt=100A/us
Qrr Reverse Recovery Charge -- 1.5 uC

Symbol Parameter Max. Units

R θ JC Junction-to-Case 2.0 ℃/W
R θ JA Junction-to-Ambient 100 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10.0mH, Rg=25 Ω，Vdd=50V, Start TJ =25℃

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Characteristics Curve：

Figure.1 Maximum Forward Bias Safe Operating Area Figure.2 Maximum Power Dissipation vs Case Temperature

Figure.3 Maximum Continuous Drain Current vs Case Temperature Figure.4 Typical Output Characteristics

Figure.5 Maximum Effective Thermal Impedance , Junction to Case

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Figure.6 Typical Transfer Characteristics Figure.7 Typical Body Diode Transfer Characteristics

Figure.8 Typical Drain to Source ON Resistance Figure.9 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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Figure.10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature

Figure.12 Typical Capacitance vs Drain to Source Voltage Figure.13 Typical Gate Charge vs Gate to Source Voltage

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Test Circuit and Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 6.30 6.90
A1 0 0.13
B 5.70 6.30
C 2.10 2.50
D 0.30 0.60
E1 0.60 0.90
E2 0.70 1.00
F 0.30 0.60
G 0.70 1.00
L1 9.60 10.30
L2 2.70 3.10
H 0.60 1.00
M 5.10 5.50
N 2.09 2.49
R 0.3
T 1.40 1.60
Y 5.10 6.30
TO-252 Package
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The name and content of poisonous and harmful material in products

Hazardous Substance
Part’s Name
Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP

Limit ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.01%

Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：Means the hazardous material is under the criterion of 2011/65/EU.
×：Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFET is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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