aoa 3h, a, With suftable diagram explsin working principle of Bimetalic Structure based" ined soning. (or) A parallel capacitor with an area (A) of 1004 x 1004 is supported by four" cantilever beams. ‘The plate is made of polycrystalline silicon that -2um, ach Csatilever beam is 400jm thick (2) Find the relative change of capacitance under an tecelertion of 1 ‘A 500um long cantilever type piezoelectric actuator is made of two layers, a ZnO layer and a poly silicon layer is shown in figure. ‘The width, thickness and terial -noperis of these two layers ate ited in Table below. Find the amount of Vertical {Gsplcement atthe end of cantilever whe the applied voltage is 10V, ah am) "Thickness (an) "Young's Modulus (pa) 16 Piezoclesre coefiient (CN) | 5 Nx (or) ‘With suitable diagram discuss sep by step fabrication process of Parylene Sure "2 Mico machined Micro Channel Lsttree unique properties of Poy (dimethysiloxane) (PDMS) with suitable diagram "2 ‘oplain steps involved in patterning of PDMS, con) List types of surfice bonding in MEMS packaging. With suitable diagram exphin ary two types of surface bonding techniques. [wer TTT TI | (ela[s) B.Tech, DEGREE EXAMINATION, JUNE 2023, Sixth Semester 18ECE302T-MEMS TECHNOLOGIES (or the condidtesadmited fromthe academe year 2018-2019 t0 2021-2022) ote: (Part shouldbe answered in OMR shect within fist 40 minutes and OMR sheet shouldbe handed ‘overt hal ivigiltor at the end of 40 mite (0 Pare- Fart ~-C shouldbe answered in answer book, ‘Time: 3 hours ‘Max. Maks: 100, PART @Q0%1=20 Marks) Fs id “Answer ALL Questions “The anisotropic Coefficient value for isotope etching i eget Ano @) A=al © A-os ©) Avto ‘Which ofthe following photolitbographic printing technique has bestresoluion? == 1183 (A). Contact Printing (@) Proximity Printing (© Project Printing (©) Mix of Proximity and Projection Printing Which ofthe following etching technology can achieve highestetchselectiviy? = 1 1 (A) Wer Ptching © RE In RF-plasma chamber which region has maximum voltage drop? eget (A) Cathode Glow Region {Cathode Sheet Region (©) Plasms Region (D) Negative Glow Region Sensitivity of silicon at oom temperature is maximum when the silicon i hoya (A). Intinsie (B) Lightly peype doped (©) Lightly naype doped (©) Highly doped In TMAH wet etching, which crystal plane orientation of silicon iseasiettocich? = 112 (a) 100 ‘@) 0 om ©) 101 ‘The mille indices of «plane which cus xy and z-axis atx=2, y= 1 and esis 2 respectively is @ 2S @) 05,02 © 5102 ©) 135 ‘Shear modulus of elasticity, Gi defined as poraa W Gut ® gal r 7 © Gal © Gat ‘A MEMS parle plate capacitor separated by 10um has capacitance 10F. Whatis 1 2 3! the fore acting between plates when a potential dfeence of 10 i applied between the plates? (A) oan @) 05yN © ww ©) sun1 2. 16. 1. 1, 1, 2». 24 2, ‘The physical phenomenon responsible for eansduction from themal energy to 1 1 3 cy (a) Pesvay (©) Pemetsiciy © Prete ©) Phwnetetse Thema ie vox on epee ot baa ("hc cee (©) cet © Pomc tit (©) Gomme Te volume hol expo ecient (TE) tnd a vo ory ony x r © goth ar 7 tn sco penne: cmon, (RET) whith woconiiensnecqa? = 2+ Gna @) mons © mom © mom Tce or we ed fr messing a (a) Comat ore ©) Acsckesion Vee ©) Teopee The maga cpt a matrix. te mais (a) "Pramagree ©) Dampcte (© Raman (©) reno Forpemanentmgnetormenar spisatonthemagnciaonlystcess cuenta, 1 4 imal sl (a) eye (®) Vey tin © Aveeaine {D) Not depnds nso cuve In LIGA procs we us wich pyr mas? os () tv ‘ey sus ©) Parylene @) PVA Te tmperaue a which a per apres a tason fom mont igit 1 $ (A) Melting point (B) Glass transition temperature (©) Dew Point D) Triple Point ‘The pobpmer sce sown nen fe toe (A) oomige ® sus ‘6 ma ©) Fanlne Ini cystpolyme (AC heii pment moll signnettoone 11S tude nthe @) New Ses ®) Sica sess (©) Maximum force Component (D) Minimum force Component PART- BG <4=20 Maris) “Answer ANY FIVE Questions mae ab co List imporant performance parameters of a senso. Elaborate in del aay two? performance parameters [Explain wafer identification using major and minor cuts on silicon wales, saa 23, With suable diagram explain working principe of meal stain. Ma tas 24, With suitable diagram explain how Torsion is created in micro motor with Lorentz 2 4 2 Foree Actuation 25, List dhce unique propetes of Ply (Dimethysiloxane) POMS) With LorentzForce 4 2 4 3 ‘Actuation 26. A fixedtce cantilever beam made of single erystal silicon with length posting inthe #32 (100) crystal orientation. Ten points (labeled a through!) are identified on the cantilever. The length (D, thickness (0, and width (w) of the beam are 100:m, 10m and 6um respectively. If Im force acts atthe end of te cantilever, what is ‘magnitude of the maximum stress in the cantilever? At which point does the ‘maximum stress occur? fixed end ond 27. Explain briefly important aspects in selecting material for microchannel and 4 2 4 1 subsequent fabrication methods, _A PART—C (Sx 12=60 Marks) ‘Answer ALL Questions Mem co ro 28a, Witha neat diagram explain different regions in plasma chamber with asuitable "131 agra. What i cathode glow and cathode sca? (or With neat diagram explain process steps involved in CVD process. Diseuss, What 23 1 do you understand fom terms i Nvelestion and Boundary layer 29.a, Prove that resistivity of ilcon is maximum when tis slightly paype doped. Findthe 12 4 2 1 hole conceatration a function of electron and hoe mobility at maximum resistivity. (oR) b. A fixedstee cantilever is made of single crystal silicon is shown in Figue. The 2 4 2 2 resistors made by difusion doping, with a longitainal gauge factor of SO The depth of the doped region is tess than Om. The lengthy Width, and thicker ofthe cantilever are 200um, 20m and Sum eespetively. Ifa force F = 100,N is applied in the mide ofthe cantilever beam. What would be percentage change of sistance? Given Young's modulus of sion as Eanun = 130GPa, frame f al,