2N7002K

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), [email protected],IDS@200mA=4Ω

0.006(0.15)MIN.
0.120(3.04)
0.110(2.80)

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays 0.056(1.40)
0.047(1.20)
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM 0.079(2.00) 0.008(0.20)
0.070(1.80) 0.003(0.08)
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
0.004(0.10) 0.044(1.10)
0.000(0.00) 0.035(0.90)
MECHANICAL DATA
0.020(0.50)
• Case: SOT-23 Package 0.013(0.35)

• Terminals: Solderable per MIL-STD-750,Method 2026

• Marking: K72
• Approx. Weight: 0.0003 ounce, 0.0084 gram

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA M E TE R S ym b o l Li mi t U ni t s
D r a i n- S o ur c e Vo l t a g e V DS 60 V

G a t e - S o ur c e Vo l t a g e V GS +20 V

C o nt i nuo us D r a i n C ur r e nt ID 300 mA

P ul s e d D r a i n C ur r e nt 1)
ID M 2000 mA
T A = 2 5 OC 350
M a xi m um P o w e r D i s s i p a t i o n PD mW
T A = 7 5 OC 210
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
T J , T S TG -5 5 to + 1 5 0 O
C
R a ng e
Junction-to Ambient Thermal Resistance(PCB mounted)2 R θJ A 357 O
C /W

Note:1.Maximum DC current limited by the package

2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%

September 18,2019-REV.04 PAGE . 1

This datasheet has been downloaded from http://www.digchip.com at this page

 2N7002K
ELECTRICALCHARACTERISTICS

P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s

S ta ti c
D r a i n- S o ur c e B r e a k d o w n
B V DSS V G S = 0 V , ID = 1 0 u A 60 - - V
Vo lta g e
G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 2 .5 V
D r a i n- S o ur c e O n- S t a t e
R D S ( o n) VGS=4.5V , I D=200mA - - 4 .0
R e s i s t a nc e
Ω
D r a i n- S o ur c e O n- S t a t e
R D S ( o n) VGS=10V , I D=500mA - - 3.0
R e s i s t a nc e
Ze r o Ga te Vo lta g e D r a i n
ID S S VDS=60V , VGS=0V - - 1 uA
C ur r e nt
Gate Body Leakage IG S S V G S =+ 2 0 V , V D S = 0 V - - +10 uA

Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 m A 100 - - mS

Dynamic

V D S = 1 5 V , ID = 2 0 0 m A
To t a l G a t e C h a r g e Qg - - 0 .8 nC
VGS=5V

Tu r n - O n Ti m e ton VDD=30V , RL=150Ω - - 20

ID=200mA , VGEN=10V ns
Tu r n - O f f Ti m e t o ff RG=10Ω - - 40

In p u t C a p a c i t a n c e C iss - - 35
V D S = 2 5 V , V GS = 0 V
O ut p ut C a p a c i t a nc e C oss - - 10 pF
f=1 .0 MHZ
R e v e r s e Tr a n s f e r
C rss - - 5
C a p a c i t a nc e
S o ur c e - D r a i n D i o d e

D i o d e F o rwa rd Vo lta g e V SD IS=200mA , VGS=0V - 0.82 1.3 V

C o nt i nuo us D i o d e F o r w a r d
IS - - - 300 mA
C ur r e nt
P ul s e D i o d e F o r w a r d
IS M - - - 2000 mA
C ur r e nt

Switching VDD Gate Charge VDD

Test Circuit Test Circuit
VIN RL VGS RL

VOUT

1mA
RG

RG

September 18,2019-REV.04 PAGE . 2

 2N7002K

Typical Characteristics Curves (TA=25OC,unless otherwise noted)

1.2 1.2
V DS=10V

I D - Drain Source Current (A)

V GS = 10V ~ 6.0V
5.0V
ID - Drain-to-Source Current (A)

1 1

0.8
4.0V 0.8

0.6 0.6

0.4 0.4
3.0V T J=25
0.2 0.2

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Fig. 1-TYPICAL FORWARD

FIG.1- Output CHARACTERISTIC
Characteristic FIG.2- Transfer Characteristic

5 5
R DS(ON) - On-Resistance ( W )
R DS(ON) - On-Resistance ( W )

4 4

3 3

I D=500mA
2 V GS=4.5V 2

I D=200mA
1 V GS=10V 1

0 0
0 0.2 0.4 0.6 0.8 1 2 3 4 5 6 7 8 9 10

ID - Drain Current (A) V GS - Gate-to-Source Voltage (V)

FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage

1.8
V GS=10V
RDS(ON) - On-Resistance(Normalized)

1.6 I D=500mA

1.4

1.2

0.8

0.6
-50 -25 0 25 50 75 100 125 150
o
TJ - Junction Temperature ( C)

FIG.5- On Resistance vs Junction Temperature

September 18,2019-REV.04 PAGE . 3

 2N7002K

10
Vgs VDS=10V

V GS - Gate-to-Source Voltage (V)

Qg
8 ID =250mA

2
Vgs(th) Qsw

0
Qg(th) 0 0.2 0.4 0.6 0.8 1
Qgs Qgd Qg
Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform Fig.7 - Gate Charge

1.2
Vth - G-S Th r esh o l d Vo l tag e (NORMA L IZED)

88
ID =250 m A
BVDSS - Breakdown Voltage (V)

ID = 250 m A
86
1.1
84
1 82

80
0.9
78

0.8 76

74
0.7 72
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature ( C) TJ - Junction Temperature ( o C)

Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature

10 70
VGS = 0V f = 1MHz
V GS = 0V
60
IS - Source Current (A)

C - Capacitance (pF)

50
1
40

TJ = 125oC 30
-55oC
0.1 Ciss
20
Coss
25oC 10
Crss
0.01 0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 20 25

VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage Fig.11 - Capacitance vs Drain to Source Voltage

September 18,2019-REV.04 PAGE . 4

 2N7002K

MOUNTING PAD LAYOUT

(0.90) MIN.
0.035 MIN.
0.031 MIN.
(0.80) MIN.

(1.10)

(2.00)
0.037

0.043

0.078
(0.95)

0.043
(1.10)

0.106
(2.70)

ORDER INFORMATION

• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel

September 18,2019-REV.04 PAGE . 5

 2N7002K

Part No_packing code_Version

2N7002K_R1_00001
2N7002K_R2_00001

For example :
RB500V-40_R2_00001
Serial number
Part No. Version code means HF
Packing size code means 13"
Packing type means T/R

Packing Code XX Version Code XXXXX

Packing type 1st Code Packing size code 2nd Code HF or RoHS 1st Code 2nd~5th Code

Tape and Ammunition Box

A N/A 0 HF 0 serial number
(T/B)
Tape and Reel
R 7" 1 RoHS 1 serial number
(T/R)
Bulk Packing
B 13" 2
(B/P)
Tube Packing
T 26mm X
(T/P)
Tape and Reel (Right Oriented)
S 52mm Y
(TRR)
Tape and Reel (Left Oriented) PANASERT T/B CATHODE UP
L U
(TRL) (PBCU)
PANASERT T/B CATHODE DOWN
FORMING F D
(PBCD)

September 18,2019-REV.04 PAGE . 6

 2N7002K

Disclaimer

• Reproducing and modifying information of the document is prohibited without permission

from Panjit International Inc..

• Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.

• Panjit International Inc. disclaims any and all liability arising out of the application or use of
any product including damages incidentally and consequentially occurred.

• Panjit International Inc. does not assume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.

• Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.

• The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.

• Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.

September 18,2019-REV.04 PAGE . 7