EMB12P03V

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: D
BVDSS ‐30V
RDSON (MAX.) 12mΩ
ID ‐21A G

UIS, Rg 100% Tested S

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT

Gate‐Source Voltage VGS ±20 V

TA = 25 °C ‐21
Continuous Drain Current ID
TA = 100 °C ‐16 A

Pulsed Drain Current1 IDM ‐84

Avalanche Current IAS ‐13

Avalanche Energy L = 0.1mH, ID=‐13A, RG=25Ω EAS 8.45

mJ
2
Repetitive Avalanche Energy L = 0.05mH EAR 4.23

TA = 25 °C 2.5
Power Dissipation PD W
TA = 100 °C 1

Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT

Junction‐to‐Case RJC 6
°C / W
3
Junction‐to‐Ambient RJA 50
1
Pulse width limited by maximum junction temperature.
2
Duty cycle  1％
3
50°C / W when mounted on a 1 in2 pad of 2 oz copper.

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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT

MIN TYP MAX

STATIC
Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = ‐250A ‐30 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = ‐250A ‐1 ‐1.5 ‐3
Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS = ‐24V, VGS = 0V ‐1 A
VDS = ‐20V, VGS = 0V, TJ = 125 °C ‐10
1
On‐State Drain Current ID(ON) VDS = ‐5V, VGS = ‐10V ‐21 A
Drain‐Source On‐State Resistance1 RDS(ON) VGS = ‐10V, ID = ‐13A 10.5 12
mΩ
VGS = ‐4.5V, ID = ‐9A 15 20
Forward Transconductance1 gfs VDS = ‐5V, ID = ‐13A 30 S

DYNAMIC
Input Capacitance Ciss 2363
Output Capacitance Coss VGS = 0V, VDS = ‐15V, f = 1MHz 385 pF

Reverse Transfer Capacitance Crss 326

Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 4.0 Ω
Total Gate Charge1,2 Qg(VGS=10V) 45
Qg(VGS=4.5V) VDS = ‐15V, VGS = ‐10V, 20 nC
1,2 ID = ‐13A
Gate‐Source Charge Qgs 5.6
Gate‐Drain Charge1,2 Qgd 8.5
Turn‐On Delay Time1,2 td(on) 15
1,2
Rise Time tr VDS = ‐15V, 12 nS
1,2
Turn‐Off Delay Time td(off) ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω 35
Fall Time1,2 tf 10

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS ‐3.5

A
Pulsed Current3 ISM ‐14
Forward Voltage1 VSD IF = IS A, VGS = 0V ‐1.2 V
Reverse Recovery Time trr IF = IS, dlF/dt = 100A / S 32 nS
Reverse Recovery Charge Qrr 26 nC

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1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB12P03V for EDFN 3 x 3

B12 B12P03: Device Name

P03
ABCDEFG ABCDEFG: Date Code

b A1

Θ1
0.10
Outline Drawing E1
E

e c

D
D1
L1
E2
E3
L

Dimension in mm
Dimension A A1 b c D D1 E E1 E2 E3 e L L1 Ѳ1

Min. 0.70 0 0.24 0.10 2.95 2.25 3.15 2.95 1.65 0.30 0∘

Typ. 0.80 0.30 0.152 3.00 2.35 3.20 3.00 1.75 0.575 0.65 0.40 0.13 10∘

Max. 0.90 0.05 0.37 0.25 3.15 2.45 3.40 3.15 1.96 0.50 12∘

Recommended minimum pads

0.6

2.6
2.05
3.75

0.65
0.5

0.4
0.6

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On‐Region Characteristics On‐Resistance Variation with Drain Current and Gate Voltage
50 2.4
‐ 6.0V ‐ 5.0V
VGS = ‐ 10V
‐ 7.0V ‐ 4.5V 2.2
40
2.0

Drain‐Source On‐Resistance
RDS(ON) ‐Normalized
‐I D ‐ Drain Current( A )

30 1.8

1.6 VGS = ‐ 4.5V

20 ‐5V
1.4
‐6V
1.2
10 ‐7V
‐ 10 V
1.0

0 0.8
0 1 2 3
0 10 20 30 40 50
‐VDS ‐ Drain‐Source Voltage( V )
‐ ID ‐ Drain Current( A )

On‐Resistance Variation with Tem perature On‐Resistance Variation with Gate‐Source Voltage
1.6 0.06
ID = ‐13 A
V GS = ‐ 10V I D = ‐ 6.5 A
0.05
1.4
R DS(ON) ‐ On‐Resistance(Ω)
Drain‐Source On‐Resistance

0.04
R DS(on) ‐ Normalized

1.2

0.03

1.0
0.02
TA = 125°C
0.8
0.01
TA = 25°C

0.6
‐50 ‐25 0 25 50 75 100 125 150 0
0 5 10 15 20
T J ‐ Junction Temperature (°C) ‐ VGS ‐ Gate‐Source Voltage( V )

Body Diode Forward Voltage Variation

Transfer Characteristics with Source Current and Temperature
40 100
VDS = ‐ 5V VGS = 0V
‐Is ‐ Reverse Drain Current( A )

10
‐ 55°C 25°C
30
‐ID ‐ Drain Current( A )

1 TA = 125°C
TA = 125°C

20 0.1 25°C

0.01 ‐55°C

10

0.001

0
1.5 2 2.5 3 3.5 4 0.0001
0 0.2 0.4 0.6 0.8 1.0 1.2
‐VGS ‐ Gate‐Source Voltage( V )
‐VSD ‐ Body Diode Forward Voltage( V )

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Gate Charge Characteristics Capacitance Characteristics

10 3000
I D = ‐ 13A f = 1 MHz
VGS = 0 V

8 2400
‐ VGS ‐ Gate‐Source Voltage( V )

‐ 10V Ciss

Capacitance( pF )
VDS = ‐ 5V ‐ 15V

6 1800

4 1200

2 600
Coss
Crss
0 0
0 15 30 45 60 75 0 5 10 15 20 25 30
Q g ‐ Gate Charge( nC ) ‐ VDS , Drain‐Source Voltage( V )

Maximum Safe Operating Area Single Pulse Maximum Power Dissipation

100 50
Single Pulse
it RθJA = 50°C/W
N)
Lim 100μs TA = 25°C
O
R DS( 1ms 40
P( pk ),Peak Transient Power( W )

10
‐ID ‐ Drain Current( A )

10ms
100ms 30
1s
1
10s
20
DC
VGS = ‐10V
0.1 Single Pulse
10
R JA= 50°C/W
TA = 25°C

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
‐VDS ‐ Drain‐Source Voltage( V )

Transient Thermal Response Curve

1
Duty Cycle = 0.5
Transient Thermal Resistance

0.2
r( t ),Normalized Effective

0.1
0.1
0.05
Notes:
0.02
P DM
0.01
t1
0.01 1.Duty Cycle,D =
t2
t1

t2
Single Pulse 2.RθJA = 50°C/W

3.TJ ‐ TA = P * RθJA (t)

4.R JA (t)=r(t) + RθJA

θ

0.001
‐4 ‐3 ‐2 ‐1
10 10 10 10 1 10 100 1000
t1 ,Time (sec)

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