CHAPTER 2

BIPOLAR JUNCTION
TRANSISTOR (BJT)

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 Contents
INTRODUCTION
CONSTRUCTION AND SYMBOL
 and α
CONFIGURATIONS AND CHARACTERISTICS
Common Base
Common Emitter
Common Collector
REGIONS AND LIMITS OF OPERATION
COMMON EMITTER CONFIGURATION – DC Analysis
Fixed-Bias Circuit
DC & Load line analysis
Emitter-Bias Circuit
DC & Load line analysis
Voltage-divider Bias Circuit
Exact Analysis
Approximate Analysis
DC & Load line analysis
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 INTRODUCTION

 There are two basic types of transistors:

bipolar junction transistor (BJT) and the
field-effect transistor (FET).
 The major applications of bipolar junction
transistors are as an amplifier and as an
electronic switch.

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CONSTRUCTION & SYMBOL
 Transistor is a three terminal device.
 The terminals are known as base (B),
collector (C) and emitter (E).
 It is constructed using the p-type and n-type
materials.
 There are two types of transistors, namely
npn and pnp

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 CONSTRUCTION & SYMBOL

B B

E n p n C E p n p3 V C

C C

B B

E E

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 CONSTRUCTION & SYMBOL
 Connection of power supply
C IC C IC

n p
B B
p VCC n VCC
IB n IB p

VEE VEE
E IE E IE

B-E junction is forward bias. When power supply is connected across

the terminals, collector current, IC, emitter current, IE and base current,
IB flow in the transistor. IB will flow when VEE> 0.7V (for Si). KCL
relation between currents :
IE = IB + IC 6
CONSTRUCTION & SYMBOL

Physical view

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  and 
 The ratio of the collector current to the
base current is known as the current gain
(hFE or ), that is
IC
h FE β
IB
 and IC = IB. The values of  are given by
manufacturer in the specification sheet
and normally range from 50 to 400.

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  and 
 There is a relationship between a collector
current and the emitter current. The ratio of
the collector current to the emitter current
is known as , that is
IC
α
IE
 and IC = IE. Normal range for  is 0.90 to
0.998. Therefore can always assume IE  IC.
 In general, IC and IE measured in mA while IB in µA
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CONFIGURATIONS AND
CHARACTERISTICS
 Common base : The base is common to
emitter and collector and is connected to
ground. Emitter-base section is the input
section while collector-base is output section
E C

IE IC

IB B npn
transistor

VEE VCC 10
 CONFIGURATIONS AND
CHARACTERISTICS

 Common Collector : The collector is

connected to ground

E IE

B
VEE
IB
VBB IC
C

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 CONFIGURATIONS AND
CHARACTERISTICS
 Common Emitter : The emitter is
connected to ground

C IC

B
VCC
IB
VEE IE
E

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 CONFIGURATIONS AND
CHARACTERISTICS
 Characteristics of Common Emitter

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 REGIONS AND LIMITS OF
OPERATION

active region

Note: VCE is at maximum and IC is at minimum (ICmax=ICEO) in the cutoff region.

IC is at maximum and VCE is at minimum (VCE max = VCEsat = VCEO) in the
saturation region.
The transistor operates in the active region between saturation and cutoff.
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POWER OF DISSIPATION

Common – Base: PCmax  VCBIC

Common – Emitter: PCmax  VCEIC

Common – Collector: PCmax  VCEIE

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 COMMON EMITTER
CONFIGURATION
 The analysis or design of any electronic
amplifier therefore has two components: the
dc portion and the ac portion.
 For amplification of the applied signal, the Q-
point must be in the active region of the
characteristics graph.
 The Q-point (IBQ, ICQ, VCEQ) is very important
to ensure that the transistor operates in the
active region and the dc limits of operation.
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 DC BIASING CIRCUIT
CONFIGURATION
1. Fixed-Bias Circuit
2. Emitter-Stabilized Bias
Circuit
3. Voltage Divider Bias Circuit
4. Collector-Emitter Loop
5. DC Bias with Voltage Feedback
6. Miscellaneous Bias Circuits

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 AMPLIFIER CIRCUIT
DC analysis ; Capacitor – open circuit
AC analysis ; Capacitor – short circuit & DC supply
connect to ground

Amplifier circuit speaker

microphone
(Power Amplifier)
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Fixed-bias Circuit

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 Base-Emitter Loop

VCC  VBE
I B  I BQ 
RB

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Collector-Emitter Loop

I C  I CQ  βI BQ

VCE  VCEQ  VCC  I C R C

VCE  VC  VE

VCE  VC

VBE  VB  VE

VBE  VB

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 Load Line Analysis

ICsat
VCE  VCC  I C R C

ICQ

VCEQ VCEmax
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Circuit values effect Q-point
IB3>IB2>IB1

Effect by IB
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Circuit values effect Q-point
IB3>IB2>IB1

Effect by R

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Circuit values effect Q-point
IB3>IB2>IB1

Effect by Vcc
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Emitter-Stabilized Bias Circuit

Adding a resistor to the emitter circuit stabilizes the bias

circuit.
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 Base-Emitter Loop

 VCC  I B RB  VBE  I E RE  0

I E  (  1) I B
VCC  I B RB  VBE  (   1) I B RE  0

VCC  VBE
I B  I BQ 
RB  (   1)RE

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 Collector-Emitter Loop
 I E RE VCE  I C RC VCC  0 I C  I CQ  βI BQ

VCE  VCEQ  VCC  I C ( RC  RE )

C
VB  VCC  I R RB
VB VBE VE
VC  VCE VE
VC  VCC  I C RC
VE  I E RE

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Load Line Analysis

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 Voltage Divider Bias

This is a very stable bias circuit.

The currents and voltages are almost independent of variations in .
IB << I1 and I2 and I1  I2
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 Exact Analysis
 Base loop - determine Thevenin’s equivalent
circuit
VCC RT H IB

+
R1
VBE
VT H 
IB IE
RE
+
VBE

R2 IE
RE
Thevenin’s equivalent circuit

Base loop 31
 Exact Analysis
 From the base loop

R2 R1 R 2
VT H  (VCC ) R TH 
R1  R 2 R1  R 2

 Applying KVL to the Thevenin’s equivalent circuit,

 VTH = IBRTH + VBE + IERE
 Substituting IE = (β + 1) IB,
 VTH = IBRTH + VBE + (β + 1) IBRE
 Solving the equation for IB,

VT H  VBE
I B  I BQ 
R T H  (β  1)R E

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 Exact Analysis
 Collector-emitter Section
I C  I CQ  βI BQ

VCE = VCC – ICRC – IERE

Or VCE = VCEQ= VCC – IC(RC + RE)

VE = I E RE

VB = VBE + VE
VB = VTH – IBRTH

VC = VCE + VE
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 Approximate Analysis

 approximate analysis is carried out by

assuming the base current, IB  0.
 The assumption is true if the following
condition is satisfied.

RE  10R2

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 Approximate Analysis
Base Voltage

R2
VB  VT H  (VCC )
R1  R 2

VE
then VE VB VBE and IE 
RE

Applying Kirchoff’s voltage law:

VCE VCC  I C RC  I E RE
I CQ  IE --- IB 0

VCE  VCEQ  VCC  I C ( RC  RE )

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Load Line Analysis

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 Fixed-bias Circuit Emitter Bias Circuit Voltage Divider Bias

VCC  VBE VCC  VBE VT H 

R2
I B  I BQ  I B  I BQ  (VCC )
RB RB  (   1)RE R1  R 2
R1 R 2
I C  I CQ  βI BQ I C  I CQ  βI BQ R TH 
R1  R 2

VCE  VCEQ  VCC  I C R C VCE  VCEQ  VCC  I C ( RC  RE ) VT H  VBE

I B  I BQ 
R T H  (β  1)R E
Load line
Load line I C  I CQ  βI BQ

V I Csat 
VCC VCE  VCEQ  VCC  I C ( RC  RE )
I Csat  CC RC  RE
RC
Load line
VCC
VCEmax  VCC VCEmax  VCC I Csat 
RC  RE

VCEmax  VCC
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DC Bias with Voltage Feedback
Circuit
VCC

I C'
RC
RB

IC CC
C vo
CB IB
+
vi VCE
B + 
VBE E

IE
RE
CE

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DC Bias with Voltage Feedback
Circuit
VCC

I C'
RC
RB

IC CC
C vo
CB IB
+
vi VCE
B + 
VBE E

IE
RE
CE

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 DC Bias with Voltage Feedback
Circuit
VCC

VCC = IC’RC + IBRB + VBE + IERE

I C'
RC where IC’ = IC + IB  IC and
IE = (β + 1) IB  IC
IC Substituting IC’ = IC and IE = IC,
C VCC = ICRC + IBRB + VBE + ICRE
IB
+
VCE VCC  VBE
B +  I BQ 
VBE E RB   ( RC  R E )

RE IE IE = (β + 1) IB  ICQ

VCEQ = VCC – IC(RC + RE)

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 Bias Stability
Stability is a measure of change in currents and voltages
due to changes in .
The transistor’s  increases when the temperature
increases.
From the results obtained, it can be concluded that the Q-
point (IBQ, ICQ and VCEQ) of the voltage-divider bias circuit are
the least affected by changes in β while the Q-point of the
fixed bias circuit is most affected by changes in β.

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Bias Stability

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 TRANSISTOR SWITCHING
CIRCUITS
 The application of transistors in switching circuits and
logic gates such as inverter, AND gate and NOR gate.
 In the saturation region, the base-emitter junction and
collector- base junction are forward biased while in the
cut-off region, both the base-emitter and collector-base
junctions are reverse biased.
 Therefore the transistor can be used as an ON-OFF
switch.

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 Inverter
VCC
Vi  VBE
IB 
RB
IC RC
Vo = VCC – ICRC
VC
RB where IC = IB
Vi

IB
Vi Vo

0 1(ON)

1 0(OFF)

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 OR Gate
VCC

RB1 RB2
A B

Vo

A B Vo (VC) RE

0 0 0

0 1 1

1 0 1

1 1 1

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 AND Gate
VCC

RB A B Vo (VE)
A
0 0 0

0 1 0
RB
1 0 0
B
1 1 1
VE

RE

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Sekian, Terima Kasih

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