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    bcw31 33

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    zakrea
    This document provides specifications for three small signal NPN silicon planar transistors - the BCW31, BCW32, and BCW33. It includes maximum ratings, electrical characteristics, and parameters like gain, saturation voltage, capacitance and noise figure.

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    bcw31 33

    Uploaded by

    zakrea
    17 views1 page
    This document provides specifications for three small signal NPN silicon planar transistors - the BCW31, BCW32, and BCW33. It includes maximum ratings, electrical characteristics, and parameters like gain, saturation voltage, capacitance and noise figure.

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    bcw31_33

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    This document provides specifications for three small signal NPN silicon planar transistors - the BCW31, BCW32, and BCW33. It includes maximum ratings, electrical characteristics, and parameters like gain, saturation voltage, capacitance and noise figure.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    17 views1 page

    bcw31 33

    Uploaded by

    zakrea
    This document provides specifications for three small signal NPN silicon planar transistors - the BCW31, BCW32, and BCW33. It includes maximum ratings, electrical characteristics, and parameters like gain, saturation voltage, capacitance and noise figure.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    SOT23 NPN SILICON PLANAR BCW31

    SMALL SIGNAL TRANSISTORS BCW32


    ISSUE 2 - JUNE 1995
    BCW33
    PARTMARKING DETAILS – BCW31 – D1 BCW31R – D4
    BCW32 – D2 BCW32R – D5
    BCW33 – D3 BCW33R – D6 E
    C

    COMPLEMENTARY TYPES – BCW31 - BCW29


    – BCW32 - BCW30 B
    – BCW33 - N/A

    ABSOLUTE MAXIMUM RATINGS.


    PARAMETER SYMBOL VALUE UNIT
    Collector-Base Voltage VCBO 32 V
    Collector-Emitter Voltage VCEO 32 V
    Emitter-Base Voltage VEBO 5 V
    Peak Pulse Current ICM 200 mA
    Continuous Collector Current IC 100 mA
    Power Dissipation at Tamb=25°C Ptot 330 mW
    Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

    ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).


    PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
    Base - Emitter Voltage VBE 550 700 mV IC=2mA, VCE = 5V
    Collector-Emitter VCE(SAT) 120 250 mV IC=10mA, IB = 0.5mA
    Saturation Voltage 210 mV IC=50mA, IB =2.5mA
    Base-Emitter VBE(SAT) 750 mV IC=10mA, IB=0.5mA
    Saturation Voltage 850 mV IC =50mA, IB=2.5mA
    Collector- Base Cut-Off Current ICBO 100 nA IE=0, VCB=20V
    10 µA IE=0,VCB=20V,Tj=100°C
    BCW31 hFE 90 IC=10µA, VCE=5V
    110 220 IC=2mA, VCE=5V
    Static Forward
    Current Transfer BCW32 hFE 150 IC=10µA, VCE=5V
    Ratio 200 450 IC=2mA, VCE=5V
    BCW33 hFE 270 IC=10µA, VCE=5V
    420 800 IC=2mA, VCE=5V
    Transition Frequency fT 300 MHz IC=10mA, VCE=5V
    f = 35MHz
    Collector Capacitance CTC 4 pF IE =Ie =0, VCB =10V
    f= 1MHz
    Noise Figure N 10 dB IC= 200mA, VCE =5V
    RS =2KΩ, f=1KHz
    B= 200Hz
    *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
    Spice parameter data is available upon request for this device
    PAGE NO

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