This document describes a 30% triple junction GaAs solar cell assembly with an improved grid design and integrated bypass diode. The solar cell has an efficiency of 29.3% initially that degrades to 26.3% at a fluence of 1E15 MeV/cm2. It is made of InGaP/GaAs/Ge layers on a Ge substrate with TiOx/Al2O3 AR coating and has dimensions of 40.15 x 80.15 mm. Electrical and mechanical specifications are provided including voltage, current, temperature coefficients, and thresholds.
This document describes a 30% triple junction GaAs solar cell assembly with an improved grid design and integrated bypass diode. The solar cell has an efficiency of 29.3% initially that degrades to 26.3% at a fluence of 1E15 MeV/cm2. It is made of InGaP/GaAs/Ge layers on a Ge substrate with TiOx/Al2O3 AR coating and has dimensions of 40.15 x 80.15 mm. Electrical and mechanical specifications are provided including voltage, current, temperature coefficients, and thresholds.
This document describes a 30% triple junction GaAs solar cell assembly with an improved grid design and integrated bypass diode. The solar cell has an efficiency of 29.3% initially that degrades to 26.3% at a fluence of 1E15 MeV/cm2. It is made of InGaP/GaAs/Ge layers on a Ge substrate with TiOx/Al2O3 AR coating and has dimensions of 40.15 x 80.15 mm. Electrical and mechanical specifications are provided including voltage, current, temperature coefficients, and thresholds.
This document describes a 30% triple junction GaAs solar cell assembly with an improved grid design and integrated bypass diode. The solar cell has an efficiency of 29.3% initially that degrades to 26.3% at a fluence of 1E15 MeV/cm2. It is made of InGaP/GaAs/Ge layers on a Ge substrate with TiOx/Al2O3 AR coating and has dimensions of 40.15 x 80.15 mm. Electrical and mechanical specifications are provided including voltage, current, temperature coefficients, and thresholds.
3G30A This cell type is an InGaP/GaAs/Ge on Ge substrate triple junction solar cell assembly (efficiency class 30%). The solar cell assembly has an improved grid-design and is equipped with an integral bypass diode, interconnectors and cover glass.
Base Material GaInP/GaAs/Ge on Ge substrate AR-coating TiOx/Al2O3 Dimensions 40.15 x 80.15 mm ± 0.1 mm Cell Area 30.18 cm2 Average Weight ≤ 118 mg/cm2 Thickness 280 ± 25 µm Coverglass CMX 100 Coverglass thickness 100 µm Interconnectors (3x front side/ 1x diode) Kovar coated with Ag Dimensions (interconnector) 6.5 x 7.53 mm Interconnector thickness 25 µm
Electrical Data (SCA)
BOL 2.5E14 5E14 1E15 Average Open Circuit Voc [mV] 2690 2606 2554 2512
3G30A Average Short Circuit Isc [mA] 519.6 517.9 513.4 501.3 Voltage at max. Power Vmp [mV] 2409 2343 2288 2244 Current at max. Power Imp [mA] 502.9 501.7 499.1 485.1 Average Efficiency ŋbare (1367 W/m ) 2 [%] 29.3 28.4 27.6 26.3 Average Efficiency ŋbare (1353 W/m2) [%] 29.6 28.7 27.9 26.6 2 Standard: CASOLBA 2005 (05-20MV1, etc); Spectrum: AMO WRC = 1367 W/m ; T = 28 °C @fluence 1 MeV [e/cm²]
Acceptance Values (SCA)
Voltage Vop 2350 mV Min. average current Iop avg @ Vop 500 mA Min. individual current Iop min @ Vop 470 mA
Temperature Gradients BOL 2.5E14 5E14 1E15 Open Circuit Voltage ΔVoc /ΔT↑ [mV/°C] - 6.2 - 6.5 - 6.6 - 6.7 Short Circuit Current ΔIsc /ΔT↑ [mA/°C] 0.36 0.33 0.35 0.38 Voltage at max. Power ΔVmp /ΔT↑ [mV/°C] - 6.7 - 6.8 - 7.1 - 7.2 Current at max. Power ΔImp /ΔT↑ [mA/°C] 0.24 0.20 0.24 0.28 @fluence 1 MeV [e/cm²]
Threshold Values Absorptivity ≤ 0.91 (with CMX 100 AR) Pull Test > 7 N at 0° (with standard Kovar interconnector)
