1 s2.0 S0013468603002470 Main
1 s2.0 S0013468603002470 Main
1 s2.0 S0013468603002470 Main
www.elsevier.com/locate/electacta
Received 10 January 2003; received in revised form 19 February 2003; accepted 25 February 2003
Abstract
The oxygen ion transference numbers of a series of (La0.9Sr0.1)0.98Ga0.8Mg0.2O3d (LSGM) ceramics with different
microstructures, prepared by sintering at 1673 K for 0.5 /120 h, were determined at 973 /1223 K by a modified Faradaic efficiency
technique, taking electrode polarization into account. In air, the transference numbers vary in the range 0.984 /0.998, decreasing
when temperature or oxygen partial pressure increases. Longer sintering times lead to grain growth and to the dissolution of Sr-rich
secondary phases and magnesium oxide, present in trace amounts at the grain boundaries, into the major perovskite phase. This is
accompanied with a slight decrease of the total grain-interior resistivity and thermal expansion, while the boundary resistance
evaluated from impedance spectroscopy data decreases 3 /7 times. The electron-hole transport in LSGM ceramics was found to
decrease when the sintering time increases from 0.5 to 40 h, probably indicating a considerable contribution of acceptor-enriched
boundaries in the hole conduction. Due to reducing boundary area in single-phase materials, further sintering leads to higher p-type
conductivity. The results show that, as for ionic conductivity, electronic transport in solid electrolytes significantly depends on
ceramic microstructure.
# 2003 Elsevier Science Ltd. All rights reserved.
Keywords: Lanthanum gallate; Solid electrolyte; Transference number; Ceramic microstructure; Electron-hole conductivity
Re
2. Basic relations to (3)
Re Rbulk
o Rboundary
o
efficiency tests. In this manner it is possible to take Combining Eqs. (3), (6), (10) and (11), one may
electrode polarization into account [20], but the total obtain for the bulk and boundary transference numbers:
transference numbers are affected by both grain-bulk
and boundary resistivities to ionic transport. Rbulk
tbulk
o 1 × (1to ) (12)
Rtotal
2.2. Transference numbers as function of the oxygen Re 1
partial pressure tboundary
o (13)
Re Rboundary
o 1 [tbulk
o ]
1
t1
o
Within the electrolytic domain, the ionic transport in where the total transference number, to, can be derived
solid electrolytes such as LSGM is p(O2)-independent; from FE data using Eq. (5). It is easily seen that Eq. (12)
the oxygen partial pressure dependencies of p- and n- is quite similar to Eq. (5), due to the similar nature of the
type electronic conduction can be described by power corrections for electrode polarization and for grain-
functions, at least in a limited range of oxygen chemical boundary resistance. In addition, the bulk transference
potential [6,10,11]. In oxidizing atmospheres, the p-type number can be directly calculated from FE and IS
conductivity (sp) in LaGaO3-based electrolytes is pre- results:
dominant if compared to the n-type conduction [10,11]: Rbulk
tbulk 1 (1tobs
o ) (14)
se sn sp :sp (7) o
Rdc
The ion transference numbers under isothermal equili- Finally, if the transport model expressed by equivalent
brium conditions (Eq. (2)) may hence be expressed as circuit in Fig. 1 is valid, the relationship between the
so total, grain-bulk and boundary transference numbers is
to (8)
so sp0 × [p(O2 )]1=m 1 1 1
1 (15)
where sp0 is the electron-hole conductivity at unit to tbulk
o tboundary
o
Table 1
Properties of (La0.9Sr0.1)0.98Ga0.8Mg0.2O3d ceramics
Sintering time at 1673 K (h) Space group Unit cell volume (Å3) Relative density (%) Activation energy for total grain-bulk and boundary
conductivity (kJ mol 1) (623 /973 K)
Boundary Bulk
interpretation of the permeation data was attempted in current-independent within the limits of experimental
this work; the oxygen fluxes pumped through a sample error.
were corrected for the total oxygen-permeation flux The results on transference numbers were verified
under given conditions, as described below. Moreover, studying several LSGM samples prepared in the same
most results presented in this work correspond to zero conditions, and also using alternative measurement
oxygen-pressure gradient, when the role of oxygen techniques described earlier [20,24]. The alternative
leakage, either physical or electrolytic, can be neglected. methods, all taking electrode polarization into account,
FE measurements were carried out at 973/1223 K included the modified emf technique (EMF), and the
under zero oxygen chemical potential gradient in air, combinations of emf measurements with Faradaic
and also isothermally as a function of the oxygen partial efficiency (EMF-FE) or closed-circuit (EMF-CC) tests.
pressure inside the cell (p1). In the latter case, the oxygen Selected examples showing the reproducibility of the
pressure at the LSGM sample external electrode (p2) was results presented in this paper are given in Fig. 4. In all
21 kPa (atmospheric air); the values of p1 calculated cases the reproducibility error was significantly lower
from the sensor emf by the Nernst equation, varied from than the transference number variations discussed
0.6 to 215 kPa. All results presented below are averaged below.
from 2 to 7 data points and correspond to steady-state
conditions. The bulk resistance (Rbulk) was determined
by impedance spectroscopy before and after each single
4. Results and discussion
test.
For steady-state FE measurements, the total oxygen
flux through the sample, driven by electric and chemical 4.1. Materials characterization
forces (Ioe/Iop), is equal to the flux through the pump
removing oxygen from or pumping oxygen into the cell: XRD studies showed that only LSGM ceramics
sintered at 1673 K for 120 h was free of minor impurity
Ioe Iop Ipump (16)
phases, within the sensitivity limits of X-ray diffraction
The experiments were performed in galvanostatic mode; analysis. Traces of secondary phases were observed in
the currents through sample (Itotal) and pump (Ipump) other materials, though their amount was quite small:
were adjusted in order to achieve a given p1 value. The the intensities of impurity reflections in the XRD
permeation flux, corresponding to this p1, was deter- patterns were less than 3% of the strongest perovskite
mined prior to FE measurements by adjusting Ipump at peak (Fig. 5).
I /0 to obtain the necessary sensor emf, independent of For the material sintered during 0.5 h, the secondary
time: phase was identified as LaSrGaO4 [28]. In this case
inhomogeneity, probably due to incomplete solid state
Iop Ipump jU0 (17)
reaction, is visible even in SEM micrographs (Fig. 6A).
The values of I, U and Ipump were used to calculate This leads to a significant deviation of the perovskite
transference numbers by Eqs. (1), (5), (16) and (17). For
the FE measurements under zero oxygen chemical
potential gradient, the currents were adjusted to achieve
a sensor emf equal to zero, when
Ioe Ipump jp1p2 (18)
The values of voltage applied to LSGM samples in the
course of FE measurements, varied from 0 to 300 mV;
the currents through pump and sample were in the range
0 /15 mA. The sum of cathodic and anodic over-
potentials, evaluated using impedance spectroscopy
results, was lower than 20 mV; major part of total
voltage drop corresponded to ohmic losses on current
collectors, made of relatively thin Pt wires in order to
ensure an absence of gas diffusion limitations at the
electrodes. In these conditions, the influence of applied
voltage on electronic conductivity of LSGM is expected
negligible. This was checked by the measurements of ion
transference numbers as function of the current; 2 /7 Fig. 4. Examples of the experimental results showing reproducibility
data points were measured for each to value. In the of the oxygen ion transference numbers of LSGM, measured by
studied voltage range, the transference numbers were different methods.
1822 V.V. Kharton et al. / Electrochimica Acta 48 (2003) 1817 /1828
Fig. 6. SEM micrographs of (La0.9Sr0.1)0.98Ga0.8Mg0.2O3d ceramics sintered at 1673 K: (A) 0.5 h, (B) 4.0 h, (C) 40 h, (D) 120 h. White rectangles in
(A) show segregated impurity phase.
V.V. Kharton et al. / Electrochimica Acta 48 (2003) 1817 /1828 1823
the heat treatment of 120 h (Fig. 5). One should also tendency for oxide solid-electrolyte ceramics [15,29],
note that, when sintering time increases from 0.5 to 120 being distributed in the boundary layers without crystal-
h, the average grain size increases from 0.5 /3 to 6 /10 lization as a separate phase. In the case of materials
mm. Therefore, the variations of transport properties sintered for long periods, Ga-depletion from the bound-
discussed in this paper, may result from two factors, aries results, obviously, from gallium oxide volatiliza-
namely the presence of secondary phases and decreasing tion. At the same time, the changes in total cation
grain-boundary area. Another necessary comment is composition due to prolonged heat treatments were
that the formation of impurity phases, such as LaSr- rather minor, comparable to the error of ICP spectro-
GaO4 and Sr3Ga2O6, in LSGM ceramics is well known scopic analysis (9/0.5 at.%). For comparison, while
in the literature [6,8,13]; their type and amount are both nominal LSGM composition is La0.88Sr0.10-
dependent on the sintering conditions. For example, Ga0.80Mg0.20O3d, the analytical compositions normal-
increasing sintering temperature was reported to de- ized to B-site cation concentration were La0.89Sr0.10-
crease the LaSrGaO4 fraction in favor of the LaSr- Ga0.79Mg0.21O3d and La0.90Sr0.11Ga0.79Mg0.21O3d for
Ga3O7 formation [8]. the ceramics sintered for 0.5 and 120 h, respectively.
TEM/EDS inspection showed that the grain bound- This suggests that the initial LSGM powder produced
aries in (La0.9Sr0.1)0.98Ga0.8Mg0.2O3d sintered for a by PSC was depleted with gallium in the course of
shorter time are enriched with Sr and Mg, whilst combustion synthesis, and that sintering leads to further
increasing sintering time leads to Ga depletion from Ga-depletion. However, since these changes are close to
the boundaries. As an example, Fig. 8 compares EDS the level of experimental uncertainty, one may expect
spectra of grains and boundaries of LSGM ceramics that the observed variations of transport properties
sintered for 0.5 and 120 h. The boundary enrichment result from the microstructural effects, including the
with strontium is in excellent agreement with XRD data changes in grain-interior and boundary composition,
showing traces of secondary phases, where the Sr rather than from the total cation composition varia-
concentration is higher than in the perovskite. The tions.
segregation of magnesium oxide reflects a common Notice that the impurity phase dissolution and the
corresponding changes in the composition of the
perovskite phase influence the thermal expansion of
LSGM ceramics. The average thermal expansion coeffi-
cients (TECs), calculated from dilatometric data (Fig.
9), are given in Fig. 7A. Increasing sintering time from
0.5 to 120 h leads to decreasing TEC values from 11.4 /
106 to 10.4 /106 K 1, which is considerably higher
than TEC error (9/0.1 /106 K 1). This indicates, in
particular, that the scatter in literature data on thermal
expansion of LaGaO3-based materials [2,4,6,12,14] may
also result from microstructural effects.
Fig. 8. EDS spectra of grain interior and boundaries of LSGM Fig. 9. Dilatometric curves of (La0.9Sr0.1)0.98Ga0.8Mg0.2O3d ceramics
sintered for 0.5 and 120 h. in air.
1824 V.V. Kharton et al. / Electrochimica Acta 48 (2003) 1817 /1828
Fig. 13. Temperature dependence of the electron transference numbers Fig. 15. Temperature dependence of p-type electronic conductivity of
of LSGM ceramics, determined by Faradaic efficiency measurements (La0.9Sr0.1)0.98Ga0.8Mg0.2O3d ceramics in air. Data on
in air. Solid lines are for visual guidance only. La0.9Sr0.1Ga0.8Mg0.2O3d [10,11] are shown for comparison.
1826 V.V. Kharton et al. / Electrochimica Acta 48 (2003) 1817 /1828
ence numbers (Fig. 15). The minimum electron-hole of grain boundaries. These values can hence be used for
conduction and maximum activation energy are ob- trend analysis; understanding of rboundary
o as ‘pure’
served for LSGM ceramics sintered for 40 h. The Ea and property of phases present at the boundary would be
sp values of this material are similar to those reported however incorrect. Analogously, the values of tboundary
o
by Kim and Yoo [10], while the results by Yamaji et al. show that the ratio of the ionic and electronic transport
[11] are close to the properties of at the boundary increases with sintering time, but
(La0.9Sr0.1)0.98Ga0.8Mg0.2O3d ceramics sintered for cannot be interpreted as an indication that the grains
120 h. Therefore, the differences reported in literature are more conductive with respect to ions than to
on the electronic transport in LaGaO3-based electrolytes electron holes. A simple correction of the boundary
[6,10,11,14] might be due to different processing routes ionic resistivity for the capacitance in order to take the
and, thus, different microstructures. grain-boundary thickness into account [30] demon-
The activation energy for p-type conduction in strated that the ionic contribution to the boundary
LSGM ceramics sintered for different periods of time conductivity is considerably lower than tbulko values, in
varies in the narrow range 97 /115 kJ mol1 (Table 2). agreement with theoretical predictions [31]. However,
This is significantly higher than the activation energies the use of (Cbulksbulk
o /Cboundary) ratio as a quantitative
for total conductivity, 68 /73 kJ mol 1 at 973 /1273 K measure of ‘true’ ionic conductivity of the boundaries
(Table 3), leading to a greater role of electron-hole [30] seems too ambiguous for LSGM ceramics, particu-
conduction when temperature increases. One particular larly due to unknown dielectric constants of grains and
result is that the error in grain-boundary resistivity, boundaries comprising different phases.
estimated simply as the difference between Rbulk and As expected, the ionic resistivity of LSGM grains
Rtotal values, increases with temperature. Due to short- weakly depends on the microstructure, slightly decreas-
circuiting by the electronic pathway (Fig. 1), the ing with increasing sintering time due to dissolution of
difference (Rtotal /Rbulk) is lower than the true boundary the impurity phases and, thus, increasing acceptor /
resistance to ionic conduction; the relative error is dopant concentration in the perovskite (Fig. 16B). The
boundary resistance to ionic transport also decreases
DRboundary
o Rboundary
o (Rtotal Rbulk ) with sintering time and is minimum for the material
boundary
Ro Rboundary
o sintered for 120 h, where the content of secondary
phases and magnesium segregated at the boundaries is
R2e
1 negligible. On the contrary, the electron-hole conductiv-
(Re Rbulk
o Rboundary
o ) × (Re Rbulk
o ) ity of LSGM ceramics decreases when the sintering time
1tbulk × ttotal (19) increases from 0.5 to 40 h, and increases with further
o o
sintering (Figs. 15 and 16A). Thus, the total and bulk
This error partly explains the deviation of sboundary ion transference numbers follow the behavior of p-type
estimates from Arrhenius behavior at temperatures conductivity.
above 1000 K (Fig. 12). In the low-temperature range The results on p-type conductivity may be explained
when the electron transference numbers are lower than assuming that the hole transport is significantly en-
0.01, the effect of electron-hole conduction in LSGM on hanced by the segregation of Sr-rich secondary phases
the boundary resistance estimates is negligible. and magnesium oxide at the grain boundaries. This
The specific electronic and ionic resistivities (r /1/s) hypothesis seems consistent with data [10,14] suggesting
of the grain interior and boundary of LSGM ceramics, that the electronic conduction in La(Sr)Ga(Mg)O3d
estimated using Eqs. (12) and (13), are presented in Fig. ceramics increases with increasing concentration of Sr or
16. For comparison, the scale of all three resistivity axes Mg cations. Although the exact reasons are still
is the same. Notice that the boundary ionic resistance unknown, the strong dependence of p-type conductivity
values, shown in Fig. 16, are related to the overall on the microstructure (Fig. 15) suggests the possible
volume of the ceramic materials, but not to the volume relevance of microstructural variations resulting from
Table 2
Activation energy for the p-type electronic conductivity of LaGaO3-based solid electrolytes in air
Table 3
Apparent activation energy for total conductivity of (La0.9Sr0.1)0.98Ga0.8Mg0.2O3d ceramics in air
Sintering time (h) Low-temperature range (623 /973 K) High-temperature range (973 /1273 K)
Ea (kJ mol 1) ln(A0/S K cm1) Ea (kJ mol 1) ln(A0/S K cm 1)
Ea and A0 are the regression parameters of the standard Arrhenius model, s/(A0/T ) /exp(/Ea/RT ).
5. Conclusions
found for the ionic conductivity, the electronic conduc- (Eds.), SOFC-V, vols. PV 97-40, The Electrochemical Society,
Pennington, NJ, 1997, pp. 1041 /1050.
tion in solid electrolytes strongly depends on the ceramic
[12] H. Hayashi, M. Suzuki, H. Inaba, Solid State Ionics 128 (2000)
microstructure, the latter becoming an increasingly 131.
important tool in designing materials performance. [13] E. Djurado, M. Labeau, J. Eur. Ceram. Soc. 18 (1998) 1397.
[14] V.V. Kharton, A.A. Yaremchenko, A.P. Viskup, F.M. Figueir-
edo, A.L. Shaulo, A.V. Kovalevsky, E.N. Naumovich, F.M.B.
Acknowledgements Marques, Ionics 8 (2002) 215.
[15] V.V. Kharton, F.M.B. Marques, Curr. Opin. Solid State Mater.
Sci. 6 (2002) 261.
This work was supported by FCT, Portugal (POCTI [16] V.V. Kharton, A.A. Yaremchenko, A.P. Viskup, G.C. Mather,
program and project BD/6595/2001), NATO Science for E.N. Naumovich, F.M.B. Marques, Solid State Ionics 128 (2000)
Peace program (project 978002), and INTAS (project 79.
00276). The authors are sincerely grateful to Ekaterina [17] V.V. Kharton, A.P. Viskup, A.A. Yaremchenko, R.T. Baker, B.
Tsipis for experimental assistance and helpful discus- Gharbage, G.C. Mather, F.M. Figueiredo, E.N. Naumovich,
F.M.B. Marques, Solid State Ionics 132 (2000) 119.
sions. [18] A.A. Yaremchenko, V.V. Kharton, A.P. Viskup, E.N. Naumo-
vich, N.M. Lapchuk, V.N. Tikhonovich, J. Solid State Chem. 142
(1999) 325.
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