IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 19, NO.

1, JANUARY/FEBRUARY 2013 8400507

Spectrum Analysis of 2-D Plasmon in GaN-Based

High Electron Mobility Transistors
Lin Wang, Xiao-Shuang Chen, Wei-Da Hu, and Wei Lu, Member, IEEE

Abstract—We have investigated terahertz (THz) resonant ab- In the region of off-resonance, the photoresponse is a smooth
sorption spectra in grating-gate GaN high electron mobility tran- function of gate voltage as well as frequency [9], [10], while
sistors. The results indicate that both the symmetrical plasmon resonant photoresponse can be obtained if certain conditions
mode and the asymmetrical plasmon mode play an important role
in the strong absorption of THz waves. The excitation process and are satisfied [11].
dynamic response of these plasmons are investigated in detail. Our However, short gated plasmons couple very poorly to THz
results also indicate that the asymmetrical plasmon is induced by radiation due to the acoustical nature and small net dipole mo-
the surface polarization field of the electrodes and the resonant ment of these plasmons [12]. The observed resonant structures
strength of this plasmon is reduced significantly by the decay of the in the photoresponse are mainly caused by the nonlinearity
polarization field. Variations in the resonant strength of the plas-
monic peaks are consistent with the surface resonant layer model of gated plasmons [13]. Although previous electrostatic the-
showing that the method we used can be utilized for the study ories can predict relatively accurate results for the frequencies
of coupling between THz radiation and plasmons in the channel. of THz resonance, the effective excitation of plasmonic res-
In order to achieve wider tunability, more advanced device struc- onance and the broadening of spectral peaks still need to be
tures can be explored such as a device that contains double channel explained [14], [15]. Popov et al. have shown that the broaden-
layers, in which complicated plasmons can be excited.
ing of a gated plasmon resonance linewidth is mainly caused by
Index Terms—High electron mobility transistors (HEMTs), the intermodal plasmon–plasmon scattering (the process dur-
plasmonics, spectrum, terahertz (THz) detectors. ing which the resonant gated plasmons excite the nonresonant
ungated plasmons) at the ends of the gated portion of the tran-
I. INTRODUCTION sistor channel [16]. Special antennas are needed to improve the
efficiency of coupling between the THz radiation and gated plas-
N THE last decade, voltage tunable solid-state detectors have
I gained wide recognition as potential devices for the realiza-
tion of integrated terahertz (THz) electronics in many techno-
mons. In previous work, metal grating-gate transistors for both
THz emission and detection have been proposed [8], [17], [18].
There are two purposes for using a grating-gate coupler: one is
logical applications such as imaging/sensing systems, commu- the spatial modulation of electron density, and the other is for
nication systems, etc. [1]–[3]. Since the first demonstration of the excitation of 2-D plasmons through a spatially modulated
2-D plasmon resonance in a submicron high electron mobil- THz near-field/polarization field. Most of the reported works
ity transistor (HEMT) with an operating frequency located in focus on GaAs HEMTs with submicrometer gate length due to
the THz range, various theoretical and experimental studies on the low electron density in the channel.
THz wave resonances have been performed [4]–[8]. In prin- Recently, large area slit grating-gate GaN HEMTs have at-
ciple, 2-D plasmons behave like shallow water under a gate, tracted much attention for the potential of wide tunability in
and the fundamental frequency of the plasmonic oscillations is the THz frequency domain due to high electron density induced
determined by the gate length and plasma wave velocity. Hy- by the polarization effect [18]–[20]. In this paper, THz reso-
drodynamic nonlinearity of plasmonic oscillations can cause a nant absorption in GaN HEMTs with metal grating-gate and
constant source-to-drain voltage, which is recognized as a pho- quantum-wire grating-gate structures are investigated in detail.
toresponse under the illumination of the HEMT by THz waves. The field distributions and dipole oscillations of plasmons in
the single electron layer are presented for better understanding
about the dynamic of plasmonic oscillation.
Manuscript received September 22, 2011; revised December 2, 2011,
December 30, 2011, and February 4, 2012; accepted February 9, 2012. Date of
publication February 17, 2012; date of current version February 1, 2013. This
work was supported in part by the State Key Program for the Basic Research of
China under Grant 2007CB613206 and Grant 2011CB922004, by the National
II. DEVICE DESCRIPTION AND CHARACTERISTIC PARAMETERS
Natural Science Foundation of China under Grant 61006090, Grant 10725418, Fig. 1 shows the typical structure of a grating-gate GaN
Grant 10734090, Grant 10990104, and Grant 60976092, and by the Fund of
Shanghai Science and Technology Foundation under Grant 09DJ1400203, Grant HEMT. The device epilayer structures are grown by low-
09dz2202200, Grant 10JC1416100, and Grant 10510704700, and the Knowl- pressure metal organic chemical vapor deposition on 4H-SiC
edge Innovation Program of the Chinese Academy of Sciences under Grant or sapphire substrates [21]. All the AlGaN and GaN layers are
Q-ZY-7.
The authors are with the National Laboratory for Infrared Physics, Shanghai assumed to be Ga face. The thickness of the Alx Ga1−x N buffer
Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, layer is usually in the range of 1–2 μm in order to ensure high
China (e-mail: [email protected]; [email protected]). crystal quality. However, the mole fraction x should not ex-
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org. ceed 15%, because a larger mole fraction can lead to severe
Digital Object Identifier 10.1109/JSTQE.2012.2188381 interface scattering and depletion of the 2-D electron gas

1077-260X/$31.00 © 2012 IEEE

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8400507 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 19, NO. 1, JANUARY/FEBRUARY 2013

field (angular frequency ω) along the channel is

 +∞
j (x, z, ω) = σ(x, x , ω)E(x , z, ω)dx (3)
−∞

where the kernel σ(x, x , ω) describes the spatial dispersion in

the 2-D electron system. In a spatially periodic system with
period a along the x-direction, the electric field can be expressed
as follows:

+∞
−i ω t
E(x, z, ω) = E m (z)eiq m x (4)
m =−∞

where qm = 2πm/a is an in-plane wave vector, and E m (z) is

Fig. 1. Device cross section: the THz wave is incident from bottom of substrate the amplitude of the Fourier harmonic of the electric field. The
with linear polarization electric field E and wave vector k. total current can be expressed as the sum of currents induced by
these Fourier harmonics:

(2DEG) in the GaN channel layer. After the buffer layer, the 
+∞
−i ω t
j (x, z, ω) = σm E m (z)eiq m x . (5)
GaN channel and the Aly Ga1−y N barrier are sequentially grown
m =−∞
with a thickness of approximately 30 nm. The mole fraction y
in Aly Ga1−y N barrier is approximately 30%. Transistor fabri- After linearizing the continuity and Euler’s equations for the
cation can be completed after the deposition of electrodes. The electron density n and velocity v, the formulation of conductiv-
measured room temperature Hall mobility and sheet electron ity can be expressed as follows [22], [23]:
density are approximately 1200 cm−2 /V·s and 1–3 × 1013 cm−2 , ns e2 iω
respectively [21]. A TM polarization THz wave is incident from σm = (6)
m (ω − qm v dr )(ω − qm v dr + iτ −1 )
∗
the backside of the device (our results indicate that stronger ab-
sorption can be obtained when the THz wave is incident from where ns is equilibrium electron density in the channel. The
backside, see Fig. 4 and discussions therein). As mentioned ear- conductivity in (6) is the most important parameter and describes
lier, due to the small net dipole moment of gated plasmons, a both plasma wave damping and plasma wave dynamics. The
grating coupler is required to improve the coupling efficiency. spatial dispersion of conductivity is related to the dc electron
The coupler, also serving as electrodes [18], can be formed by drift by the two parameters qm and v dr . In our case, the drift
electron-beam etching. The period of the grating gate is 0.6 μm. velocity is zero and the conductivity can be simplified by the
A 0.7 duty cycle is implemented to ensure uniformity of the Drude-optical conductivity [18], [24].
2-D channel. Thus, the interaction between gated and ungated To examine energy transformation in the resonant surface
plasmons can be neglected. layer (grating gated 2-D channel), the phenomenological model
is used as in [24] and [25]. The admittance of the resonant
III. ANALYSIS MODEL AND SIMULATIONS surface layer is given as follows:
∞

The plasma wave behavior in a HEMT can be described by 1
Yeff ∼ . (7)
the hydrodynamic equations as follows [4]:
m =0
ω 2 − ωpm
2 − 2iγ ω
e

∂v e v − v dr In the neighborhood of the mth THz resonance, the transmit-

+ (v · ∇)v = − ∗ E − (Euler equation) (1)
∂t m τ tance and absorbance of the system can be expressed as follows:
∂n (ω − ωpm )2 + γe2
+ ∇(nv) = 0 (Continuity equation) (2) Tm (ω) ≈ T0 (8)
∂t (ω − ωpm )2 + (γe + γr m )2
where m∗ denotes the effective mass of an electron, about 0.2m0 √
2γe γr m (1 − R0 )
in GaN (m0 is free electron mass), E is the oscillating electric Am (ω) ≈ (9)
(ω − ωpm )2 + (γe + γr m )2
field along the channel, and τ is the electron relaxation time
(τ = μm∗ /e), in our case τ = 1.7 × 10−13 s. v and v dr are where γ e = 1/2τ is plasmon dissipative damping , γ r m is pro-
the electron velocity under THz electromagnetic field and dc portional to the electron density ns describing the radiative
biases, respectively. For a grating-gated single channel system, broadening of the THz resonance, and ω pm denotes the mth
the electromagnetic coupling of plasmonic oscillations between plasmonic resonant frequency. The total broadening of the res-
neighboring regions may not be neglected, which is different onant line is determined by γ e and γ r m . Additionally, T0 and
from single gate system. The induced-oscillating current not R0 are the transmissivity and reflectivity of the system when
only relies on the local electric field, but also on the electric there is no resonant surface layer at the interface between the
field in other regions (spatial dispersion). The general linear ex- medium above and below the resonant surface layer. The max-
pression for an electric current induced by an oscillating electric imum value of absorbance occurs at γ r m = γ e , approximately

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WANG et al.: SPECTRUM ANALYSIS OF 2-D PLASMON 8400507

The snap-shots of plasmonic oscillation are shown in Fig. 3

with continuous THz wave excitation at frequencies of peaks
A1 , B1 , and C1 , respectively. The plasma waves are electronic
polarization waves so that they can produce an alternating elec-
tric field. The distributions of the electric field, including Ex
component and Ez component, are shown in Fig. 3(a)–(f). With
the help of electric field distributions, the dipole oscillations are
shown by arrows in the third row of Fig. 3. The positive and
negative symbols “+” and “−” indicate the depletion and accu-
Fig. 2. Absorption and transmission spectra of quantum wire and metal wire mulation of electrons, respectively. Note that, in Fig. 3(i), the
grating-gate HEMTs: (a) absorption spectra and (b) transmission spectra of the
two kind grating HEMTs with 2DEG density in quantum-wire varying from charge separation is just the indication of charge density fluc-
5 × 101 2 cm−2 to 2 × 101 3 cm−2 . The sheet electron density in the channel tuation. And the style of this plasmonic oscillation is different
is 2 × 101 3 cm−2 . Three absorption peaks of metal/quantum wire structure are from that of Fig. 3(g) and (h), which can also be concluded from
marked with A (A 1 /A 2 ), B (B 1 /B 2 ), and C (C 1 /C 2 ), respectively.
the Ez distribution since the Ez component orients to the same
direction at two sides of the channel layer in Fig. 3(c) and ori-
√ ents to the opposite direction in Fig. 3(a) and (b). From this, two
0.5(1 − R0 ). To understand more clearly the physical mecha- kinds of plasmons can be obtained: one is the symmetrical plas-
nisms of the interaction between electromagnetic field and 2-D mon with symmetrical oscillating charge distributions across
plasmons, the dynamic response of a plasma wave under irradi- the channel layer (in respect to the central plane of channel) and
ation by a THz wave is numerically calculated based upon the another one is asymmetrical charge distribution. So, it can be
finite differential time-domain (FDTD) method [26]. concluded that the spectral peaks A1 and B1 are mainly caused
by the excitation of symmetrical plasmon mode (SPM), and peak
C1 is caused by the excitation of asymmetrical plasmon mode
IV. RESULTS AND DISCUSSIONS (ASPM) (Note that in this paper, the finite thickness of the 2DEG
Either quantum wire or metal wire can be used for a grating layer is considered. The thickness we used is 30 nm according
coupler. The former has previously been proposed for THz emit- to the conduction band profile—the distance from heterointer-
ter in order to be matched to frequency of plasma wave excited face to the place where the conduction band of the buffer layer
in the channel and improve the mode conversion gain [6]. For is flat. The electromagnetic interaction between carriers at two
a THz detector, it is important to achieve sufficient absorption surface of the 2DEG layer can lead to the formation of ASPM
capability in quantum wire gated HEMTs. In the numerical dis- plasmon. In actual transistor channel, the electron density dis-
cussion shown in this paper, both the quantum and metal wire tribution is around 10 nm (see [21]). Despite this, the common
grating couplers are modeled for comparison purpose. The den- properties of resonance C are captured since that the frequency
sity of 2DEG in quantum wire is set at three different levels of resonance C remains unchanged if the thickness dc varies
from 5 × 1012 cm−2 (as high as general density in the channel) from 30 to 10 nm. In other words, the condition kp dc 1 must
to 2 × 1013 cm−2 . be satisfied so that the coupling strength between charge density
Fig. 2(a) shows the absorption spectra of these devices un- oscillations at two surfaces of the 2DEG layer keeps almost un-
der irradiation by a THz wave. The corresponding transmission changed, where kp is the plasmon wave vector. And no obvious
spectra are shown in Fig. 2(b) simultaneously. Three absorption frequency shift of resonance C can be observed.). At this point,
peaks (marked as A1 /A2 , B1 /B2 , and C1 /C2 ) are clearly visible we provide the simplest way to reveal the excitation process and
in Fig. 2(a) in the frequency domain from 1 to 18 THz. The the dynamic response of the plasmons in single channel system,
frequencies of peaks A1 (fa ), B1 (fb ), and C1 (fc ) are 4.6, 7.4, which is not given in [27]. (In [27], we mainly focus on the
and 13.1 THz, respectively. They correspond to the three min- coupling of plasmons supported in different channels. Only the
ima in the transmission spectrum in Fig. 2(b). It is found that dipole distributions along the single channel layer are shown in
there are strong transmission peaks near these three frequen- the inset of the Fig. 2 for comparison purpose. However, the
cies. The transmissivity can reach 0.85 when the sheet density physical mechanisms and dynamics of these plasmons are not
of quantum wire is 5 × 1012 cm−2 . The continuous redshift in explored in detail, which deserves much attention.)
frequency of these resonant peaks can also be seen in Fig. 2(a) As shown in Fig. 3, the length of gate finger is approximately a
when the sheet density of quantum wire is decreased. And peak multiple of the half wavelength of the SPM plasma wave. There-
C has a larger downshift, from which one can conclude that fore, the resonant condition is satisfied, and the absorption peaks
peak C is an oscillation mode mostly relevant to the grating A1 and B1 are caused by resonant plasmonic oscillations. The
coupler. However, no characteristic absorption can be observed maximum value of absorbance is smaller than 0.5, which is in
when the density is lower than 1 × 1013 cm−2 . The absorption agreement with the resonant surface layer model in Section III.
and transmission are not relevant to the resonant properties of Additionally, the large difference of absorbance between peaks
2-D plasmons at this density. It is believed that stronger absorp- A1 and B1 in Fig. 2(a) can be explained by the distribution of
tion peaks corresponding to the stronger oscillation of plasmons the Ex component in Fig. 3. A larger net dipole moment can
along the channel, especially when the resonant conditions are be found in Fig. 3(d) indicating that there is a larger energy
satisfied. transferred from external incident wave to 2-D plasmons.

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8400507 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 19, NO. 1, JANUARY/FEBRUARY 2013

Fig. 3. Snap-shots of plasmonic oscillation and electric field distributions along the channel under the irradiation of THz wave corresponding to the frequencies
of peaks A 1 , B 1 , and C 1 . The distributions of E z and E x components are shown in the first and second rows, respectively. A relative coordinate X/L along the
abscissa axis is used here and L is the structure period. The dipole distributions along the channel are also shown in the third row with respect to the electric field
distributions, and the arrows show the orientation of the dipole vibrations.

Therefore, stronger absorption peak can be obtained. Referring

to peak C1 (the ASPM mode), further simulation (not shown
here) indicates that it is also related to the plasmonic oscillation
excited by the polarization field of the grating, e.g., the plasmon
is first excited at gate edge by the polarization field, then, it ex-
perience large decay along the channel due to the asymmetrical
charge distribution property and field localization in the channel
(see for example [28]).
Fig. 4(a) shows the absorption properties of the device when Fig. 4. (a) Absorption spectra of a metal-wire grating gate HEMT with THz
the THz waves are incident from the back side and top side wave incident from grating (red dashed line) and substrate (green solid line),
of the device. As can be seen in the data, significant damping is 2 × 101 3 cm−2 . (b) Fitting results
the sheet electron density in the channel √
of FDTD data (symbols) with formula A n s for the three kind resonant peaks
of peak C1 occurs when the THz wave is incident from the appearing in the spectra of metal-wire grating gate HEMT with different sheet
top side of the device. However, no significant damping can be electron densities.
observed for the peaks A1 and B1 due to the small change of
the polarization field between two gate fingers. Propagation of
the polarization field induced at a grating will experience decay ASPM plasmonic oscillation is more sensitive to the incident
along the surface of metal. Propagation length is reduced if the direction of THz waves. The strength of the polarization field
frequency of the incident field is increased. Therefore, the polar- between the gate fingers is much stronger (suffers less decay)
ization field corresponding to the frequency of the SPM mode when the THz wave is incident from the bottom side. Plasmonic
can propagate for a longer distance than that of the ASPM mode. THz absorption in grating-gate GaN HEMTs has also been
Our further simulation results (not shown here) indicate that the well studied both experimentally and theoretically by Muravjov

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WANG et al.: SPECTRUM ANALYSIS OF 2-D PLASMON 8400507

Fig. 6. (a) Schematic of the dc-HEMTs. (b) Absorption spectra of dc-HEMTs

Fig. 5. Absorption spectra of metal-wire grating gate HEMT with sheet elec- are shown under periodic sheet density modulation. The low sheet density is
tron densities varying from 0.11 to 4.53 × 101 3 cm−2 . close to the threshold value. N 1:N 2 represents the ratios between the sheet
densities of upper and lower channels with total densities value of N 1 + N 2 =
3 × 101 3 cm−2 . For comparison, the absorption spectrum of single channel
HEMTs is also shown with the 2 × 101 2 cm−2 /3 × 101 3 cm−2 periodic
et al. recently [18]. The period and slit dimensions between gate electron density distributions.
fingers in their configurations are approximately twice as large
as in our devices. From their results, an absorption peak around
1.5 THz can be clearly observed at room temperature. This fre- the surface resonant layer model in Section III, there are two
quency is approximately three times smaller than that of peak limiting cases for the damping of plasmons: 1) γ e γ r m at
A1 showing good agreement between our results (after taking low electron density, where the Drude background absorption
into consideration the parameters we use) and the results in [18]. dominates, and 2) γ r m γ e at high electron density, where
However, no plasmonic absorption of the ASPM mode is ob- the radiative phenomenon dominates. If the electron density
served in the results in [18]. This may be due to: 1) the weaker is changed from case (1) to (2), at first, the resonant absorp-
coupling strength between plasmon and THz radiation for larger tion and radiative damping increase with the density change
slits; 2) the decay of polarization field since resonant frequency and maximum resonant absorption is reached when γ e = γ r m .
of ASPM mode is much higher than that of SPM mode; 3) the The resonant absorption tends to be damped when the density
mode frequency goes beyond the region of the spectra in [18] changes to case (2). The continuous enhancement in resonant
(the frequency of ASPM mode is higher than 6 THz according strength of these peaks in Fig. 5 is consistent with the trend
to the results of Fig. 5 at the sheet density of 7.5 × 1012 cm−2 ). described by the surface resonant layer model. The maximum
As compared with asymmetrical plasmonic oscillation, the absorbance 0.5 is reached at sheet density of 4.53 × 1013 cm−2 .
field of a symmetrical plasmon spreads out of channel, interacts A resonant-like peak at about 1 THz in the spectrum of a de-
with the image charges in the gate, and propagates for a longer vice with sheet density 0.45 × 1013 cm−2 is mainly caused by
distance. The frequencies of such SPM modes satisfy the linear numerical errors inherent in the FDTD simulation process.
dispersion rule, and can be expressed as follows [7], [18], [29]: As discussed earlier, the dipole distribution is related to sheet
 density fluctuations and can be tuned by gate voltage. In order
e2 dns to achieve wider tunability, it is important to explore more ad-
ωpm ≈ mΔω1 = kpm (10)
ε 0 ε r m∗ vanced device structures since the forms of dipole oscillation
and electromagnetic coupling can be different and even more
where kpm is plasma wave vector according to selection rule intricate than that in a single channel system [28], [31]. For ex-
kpm = 2πm/a (m = 1, 2, 3. . .), a is the period of grating-gate, amples, the double channel HEMTs and plasmonic crystal can
Δω 1 is the frequency of fundamental mode (m = 1), d is the be utilized for this purpose [27], [28], [32]. Here, we simply
gate-to-channel distance, ε0 is permittivity of free space, and present and discuss the absorption spectra of double channel
εr is dielectric constant of barrier layer. From the fitted results HEMTs (for more information about the dynamic of plasmonic
in Fig. 4(b), it can be found that the relationship between the oscillation along the channel of dc-HEMT see [27]). The arti-
frequencies of the three peaks in the spectrum of metal wire ficial device structure is shown in Fig. 6(a). The interchannel
grating gate HEMT and the sheet electron density satisfies the barrier Aly Ga1−y N splits the GaN channel into the upper and
√
rule of A ns [30]. Although the ratio of fitted constant between lower channels. The mole fraction y can be graded to a high
peaks A1 and B1 is not strictly equal to 1:2, the peak A1 is caused value in order to ensure good channels isolation. The unique
by the excitation of fundamental mode and peak B1 is caused property of this type of device shows that more dimensional
by the second-order resonant mode. This can be concluded from tunability can be obtained because densities of 2DEG in the
the field distribution in Fig. 3(a) and (b) since the period of the two channels can be redistributed within the total sheet density
structure is almost commensurate with one and two times the by applying appropriate gate voltages (here, the total density
plasmon wavelength. is assumed to be 3 × 1013 cm−2 with the densities of the two
Fig. 5 shows the absorption spectra with various sheet den- channels combined together).
sities. As can be seen from this figure, the fundamental plas- The numerical results are shown in Fig. 6(b). The sheet densi-
mon resonant strength increases up to five times when the sheet ties in the channels can be modulated by applying interdigitated
density increases from 0.11 to 4.53 × 1013 cm−2 . Referring to gate voltage on the electrodes. The parts of channels with low

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8400507 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 19, NO. 1, JANUARY/FEBRUARY 2013

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for the study of coupling between THz wave and plasmons in p. 263503, 2008.
[17] D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet,
the channel. In order to reach wider tunability in frequency, it W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and
is necessary to exploit more advanced device structures. As an V. V. Popov, “Room temperature detection of sub-terahertz radiation in
example, a double channel structure can be proposed for improv- double-grating-gate transistors,” Opt. Express, vol. 18, pp. 6024–6032,
2010.
ing the strength of THz resonance by up to 70% at frequencies [18] A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala,
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ACKNOWLEDGMENT [19] A. EI Fatimy, N. Dyakonova, Y. Meciani, T. Ostuji, W. Knap, S. Vanden-
bronk, K. Madjour, D. Théron, C. Gaquieve, M. A. Poisson, S. Delage,
The authors would like to thank J. Torley from the University P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility
of Colorado at Colorado Springs for critical reading of this transistors as a voltage-tunable room temperature terahertz sources,” J.
Appl. Phys., vol. 107, p. 024504, 2010.
manuscript. [20] A. V. Muravjov, D. B. Veksler, X. Hu, R. Gaska, N. Pala, H. Saxena,
R. E. Peale, M. S. Shur, “Resonant terahertz absorption by plasmons in
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WANG et al.: SPECTRUM ANALYSIS OF 2-D PLASMON 8400507

grating-gate transistor structure on membrane substrate,” Opt. Express, Wei-Da Hu received the B.S. and M.S. degrees in
vol. 18, pp. 16771–16776, 2010. material of science from the Wuhan University of
[26] Y. Zeng, Y. Fu, M. Bengesson, X. S. Chen, W. Lu, and H. Ågren, “Finite- Technology, Wuhan, China, in 2001 and 2004, re-
difference time-domain simulations of exciton-polariton resonances in spectively, and the Ph.D. degree (Hons.) in microelec-
quantum-dot arrays,” Opt. Express, vol. 16, pp. 4507–4519, 2008. tronics and solid-state electronics from the Shanghai
[27] L. Wang, X. S. Chen, W. D. Hu, J. Wang, J. Wang, X. D. Wang, and W. Lu, Institute of Technical Physics, Chinese Academy of
“The plasmonic resonant absorption in GaN double-channel high electron Sciences, Shanghai, China, in 2007.
mobility transistors,” Appl. Phys. Lett., vol. 99, p. 063502, 2011. His experiences range from HgCdTe-based pho-
[28] T. V. Teperik, F. J. Garcı́a de Abajo, V. V. Popov, and M. S. Shur, “Strong todetector simulations to GaN-based devices (such
terahertz absorption bands in a scaled plasmonic crystal,” Appl. Phys. as HEMT and APD) design and simulations. He is
Lett., vol. 90, p. 251910, 2007. currently an Associate Professor on modeling, sim-
[29] G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, ulation, and design of photodetectors in the Shanghai Institute of Technical
J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a Physics. He has authored or coauthored more than 50 technical journal papers
monolithic hot electron bolometer,” J. Phys.: Condens. Matter, vol. 21, and conference presentations. His current research interests include plasma wave
p. 195803, 2009. detection of terahertz radiation using HEMTs, GaN-based device simulations,
[30] G. C. Dyer, G. R. Aizin, J. L. Reno, E. A. Shaner, and S. J. Allen, “Novel and HgCdTe-based photodetector simulations.
tunable millimeter-wave grating-gated plasmonic detectors,” IEEE J. Sel.
Top. Quantum Electron., vol. 17, no. 1, pp. 85–91, Jan./Feb. 2011.
[31] X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons,
M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz pho-
toconductivity and plasmon modes in double-quantum-well field-effect
transistors,” Appl. Phys. Lett., vol. 81, pp. 1627–1629, 2002.
[32] R. M. Chu, Y. G. Zhou, J. Liu, D. L. Wang, K. J. Chen, and K. M. Lau,
“AlGaN-GaN double-channel HEMTs,” IEEE Trans. Electron. Devices, Wei Lu (M’10) received the B.S. degree in physics
vol. 52, no. 4, pp. 438–445, Apr. 2005. from Fudan University, Shanghai, China, in 1983,
and the Ph.D. degree from the Shanghai Institute of
Technical Physics, Chinese Academy of Sciences,
Shanghai, China, in 1988.
He has been the Research Fellow in the Tech-
nical University of Braunschweig, Braunschweig,
Germany, 1989, and a Visiting Professor in the many
Lin Wang received the B.S. degree in applied physics countries. He is currently a Professor in Shanghai In-
(Hons.) from the Zhejiang University of Science and stitute of Technical Physics. He has authored or coau-
Technology, Hangzhou, China, in 2008. He is cur- thored more than 150 publications on optoelectronic
rently working toward the Ph.D. degree in micro- materials and devices. His current research interests include HgCdTe-based
electronics and solid-state electronics at the Shanghai photodetectors, semiconductor physics and solid spectroscopy, and physics of
Institute of Technical Physics, Chinese Academy of condensed matter.
Sciences, Shanghai, China. Dr. Lu is the Director of the National Laboratory for Infrared Physics and
His current research interests include plasma wave Shanghai Physical Society. He is the recipient of many national awards. He is
detection of terahertz radiation and GaN-based high also serving on the editorial board of the Journal of Applied Physics.
power device simulations.

Xiao-Shuang Chen received the Ph.D. degree in

condensed matter physics from Nanjing University,
Jiangsu, China, in 1995.
He has been a Research Fellow in the Korea Insti-
tute of Advanced Study, University of Tokyo, Tokyo,
Japan, and Humboldt Research Fellow in Universität
Würzburg, Würzburg, Germany. He has authored or
coauthored more than 100 publications. He is cur-
rently a Professor in the Shanghai Institute of Tech-
nical Physics, Chinese Academy of Sciences, and the
Vice Director of the National Laboratory for Infrared
Physics. His current research interests include low-dimensional field-effect tran-
sistor terahertz detectors, the physics of nanoelectronic devices and photonic
crystals, infrared photoelectronic materials, and device design.
Dr. Chen has won many national prizes for solving problems in infrared
electronics.

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