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Unit 2 Full Hand Written

This 3-sentence summary provides an overview of the key points about bipolar junction transistors discussed in the document: Bipolar junction transistors (BJTs) are semiconductor devices with three layers - an emitter, base, and collector - consisting of P- and N-type materials sandwiched together to form a PN junction, and they function by allowing current to flow through the device when a voltage is applied between the base and emitter terminals to control the flow of current between the collector and emitter.

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0% found this document useful (0 votes)
42 views112 pages

Unit 2 Full Hand Written

This 3-sentence summary provides an overview of the key points about bipolar junction transistors discussed in the document: Bipolar junction transistors (BJTs) are semiconductor devices with three layers - an emitter, base, and collector - consisting of P- and N-type materials sandwiched together to form a PN junction, and they function by allowing current to flow through the device when a voltage is applied between the base and emitter terminals to control the flow of current between the collector and emitter.

Uploaded by

asish.pavanram
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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DR RSA

COURSE CoDE : 21ECI5|35

ELEMENts Of ELECTRONLCs
COURsE
ENGINEERING6
UNIT T

BIPOLAR JUNCTION TRANSISstoRSS

isto , ieder
h
oene
Yacuum tubes'
0 4 - l947> Inaoducee
nterest
-

eechomie deviee

b T. A Plcmmimne
addeathid

06 -
-ce De Fosest Vacuum
to
Contaot 6td
elementt called
amplifiu,
Ihe toiode.
infist
dtode, Yesulting
element tetoode and
a nd

Easl 1430s, 'to


qained poomunence
tveeLment dentode
nd
Baatun
In 147 lalt t
demonsbalcd
h
t he
e anmplficaten
John Baude
8ell Telaphone
i s t torancistor
Laboratoi n

2eliod 3tal davice ovu


Adeantage
Smallu and ight oeight.
the hube
ent bY hela loss,
no
heate Aaguus
Aad Sime
Sim ce
Cons h u c h o n ,
mOr t t ient
Kugqed
Tbssbed by e deui ca
Rese po as

PA6E o
ransislod Constsuchom

SemeConductor device
device
14 is a 03 lay
etlhe tuoo and one P
Concistng oj
tupe Aateas of Mateual n pn
Tmatua [pnp
m ype
P nd one
O.IsOIn-
-0 1So Im
Ouo1in

E
P P

VEE Yco
YEE Vcc
Tpm ansicl
mp han&is les

7 Emitea Leuju n heauly dope d

7 ase Lcuea ghtt depedL


dlno
Co lle cloY Lausea
have Ldths much qmea
0ula larjets
materiaL
than he Sandwiched P ype

Peetid tota oidth to lhat o Cen lae


ISO:
OISO/o.oDl alho les
Candwiehima, laule
Dopima
lo
LcLL[en
than
low dopina deucases level
he Tnstence) by
Conuchuty IC im caLans
i t t m mo 1ree c r i ds
DR RSA

toancisler
BJT
BJT- clandsfo Bipolas uncttoo
ha t hola and
Bipola mcans Ihe fact

electaons paRtt cipal in (he in(ecHon


maerial
Process into Ike oppesitely polaned
oml Ome CarslA eploycd, it
is
unpala device. Exanple
Conidered
Scho ttt diode

ransIs ler openatiom


Bazic pesation d iansictos it ngu be
be

dsaibed ykima pnpKanaigo

NOTE
aa toctnsi stor,
toctnsisteT,
1uncttow in
)hee ase 2pn as
tt be kaqazdad
TheReforL meLy Ao o d Lonnected

Connbimatton
baael t o banl
eaeh
3teamuna Taken
Tha ase
(2
emmconducter

ype Cechn e
thin Layes Thi is
3) Middle the unchen
4alor in
Impotant
the most

tanostos.

am aansis l$
he
Juncfiom One
pansister
has Pm
A bianid and olhe
lh e
foaaid
e unctton n
se bined.

PAGE O
juncheo a s low
oowad biane
cstc tance Path .

PevexSe biane anctos Aagh


Tesistance Path

nDduced in he Louo
eal &la is

and outfct n taten


taten
ctrccut
Yestctance
circuut.
igh Testsfance

iqmal
Rou
to
Ttneistov ehe»s

Yesstance to igh e s (eance

opety
iqna awj
bans
lement fnhe plh
istos> Soli cL
NeoSfo»s

Transisle mLnaln
Namima
The Sectto o n One cide hat
mettU emttto.
Carum C a llcd
Supplin chakge
fosoad biannd
emt lle away
Tbe
So (hdt t Can upply lauge
Y.t base,
ity Ca1rilrs.

numte
PmP taneiclés, the etuP pP type
Ex fa PmP
biasel and upplin hofe
is fo asd
o i Th bane
Chalgen to it junct en
DR PsA

emitfen (n type)
Siilau mpn tocqnoisles
bianed , it Lupplin ree
foaward
bane
elcebons to s uncfion uoi h
oher ide
on he
Colleelos The Lechem
Collec
collec ter
er
Called
he charges
that Colle cis iated
always
Collec les n

to Nemove chaiges
unctem baase
wi th
th hIhe
e
1unehcn
s oro

np ansisto , colleeles (p type)


and e ceirvn hole
m ole

YeKeLe
Ye K e i s e bi a l e d
ht
c t
ih h e
Ihe Output
+hat (ow
cha
ChaaeCE
(m type)
In tcneister, Collecta Y
> m
and YeceiYen eccre
bianeel
et
at looin h outpuct
Chn4n

Nole The esictane aemitee diode (fuod


COnnpaizd to
biased) Yes Small a

iodee Creverte bianeed).


Co (lecfea
to emutha Aiede
diode
TouscLRd biased applied
Teese
wheaan
aly et all,
Ih Collecla liode much highes
bas On

Traoisles
r a n SIstor Diatom

ancISfes oi lhvuut
chous PnD
The deaam
Base to Collecto Sias
Dlas

pASE 03
+Majconty Car1eYS
DDepleteo raen
Teduwn due o
E
P a p lle bian

B ) ReavY Ho o
Depleten Tio
+| Macat
CaYerS

happeno r Ptpe
Fod biased 14nch eo oppen
+mtype moten al
Pn tanistes .
base to em-tha
remove he
5 ) 1 e t wy mouo
taen sistes
bias O Pmp 4) t is imila
Hinoarty CaTnoYS
se bjase

dio de
P
s) loo o Majonty
CaYses

Nesultn in mu
O CaY r i u
InO1ty

Reverse bianedPnp
4neh

s summ a one - n |uncton D oy a

fosoad ianae ohile


aansists
fhe olher Tererse bianed
Hayot HinDit
CATnU Cares
T
E
Maj nty and
P HinDy Cayyin
peple Mreq fto pnp banghe

VcC
VEE DR sA
DR RCA

CAesS
lasae numbu of Ma
bianed
voill Hse ac>os the feaoara
maleaial
P quncten into m +pe
Ye
The
andoiched m ype mautei al
ConduLeHvitt aveu
thin, and han Lo
h n Cavsters
Cavsiers i l l take
oill
hn e
Small
numbu o
Tsistance
base
+Chi path o htgh
tcg miMal. ordu
basc uv ent
u
e
MoLg nitude oh
Comp aued tb
micaoampere aa n oP
co
t o llleclor
leclóy
and
emi ll
mllianperen
m l l i a p e r e n f e

Cuy r e n l

A thenc
lage numbeL oThenLL
Maoattu

acoss he Teverse
CaYYCYS ill ittue
Conneded
m.
bicnd uncten IntoP
eominal
to Lolleclr
iode he injeete c
Tevese biased

F a ppeas
a
as
s mindaty
CarnerS
A i e r s
oill aPpeaa
May e y madeial
Im m type
Ca1sie
min oaitu
minDat
been Imcette
han
nan madeaial
7Cgion maerda
Thene Tcgion
m Þe a
imto
CaYriLrs
CaYriers
Ihe deplet
Carriers
in he depleten
minOity
AL
A evexe
biamed
Siamed juncten
C>oss sh oo
onn
ADi lhe ffow e n n h o

diode
accounh 1a
in u e
PAGE O4
Apply in

TE T +
Cum the Collectex
mill CYd ent he O
cuYenlS
and baseE
Colleelor CUYYent Connpaied o to

and min D1
Conponenh5 H
Called the
Mimottr
Mimoa1tyr Cuv Yent Conponent

leahaae uYYen and iYen Eymbof


T T CaYrenE oih emitt Fexminal pen)

T cmair Lcominom H
meaauRed im mt tli cAmperun

ampn apern ike


YeveSe bianed liode

PN Taansister

Maient Hinnt

ED

B
Pepleteo

Yce

DR DSA
RRSA

Dive cion o CuYTen

lhe
Cu Yent direc wil efe to
lher lhan e l e c r o n
ConventH onal Chole) lo ra

he+ve tes minal


Hows out o
Htoo, that e u
gourt
he
cut
ter minal o
and into -ve
hu the
cuYYent + v e to-ve)
lo o ea mina
e
(-Ye Fo +
Flow 0f ekretmsos a a

CommOV Base Conft quat on


boTh Ihe mput anct
Commnto
Base
Base

ides he Confrquratto
OuLtput o

P
E P
TsB

YeE VC
PmP tansis e

YEE Ncc

nPm tPansister
PA6E 0S
The o ead in lbe qnphie Symbo
dehinen he lisecten emif uY1enu

he deeite
thaugh ,

all h Cases Te = T+Te


The biasimd ueh to
vottaa aRL a

Celabush cu in Ihe diiechon Indcated

A directon o TE to the polaaty b YeE

Te+o he Vec

Epleineti Confqusat en ReTu


iels o ehasacteuchtn One doivime
PE mput Paiameters and the ztkanfor
outputt Hde The Input set f
Vep 20V

Te (mA) th ommen ase


VCB 1OV
Confiqeaaten ill Yelali
Vce -IY
TEto
Impet Cu
an Input Yota
VBE 4 Kasioun
leeeh oL YeB
O4 0 6 0-8

BECY
The Output Let wil| e l a l e an output

CuyYnt CI) to a n output voltaae CVea)


levels O mput cunent CTe)
NADiOm

DR RSA
DR RSA

Actre eion-
Te S m A

T4m
Te 2m 4
Te 2mA
Te Im
Te 0m A

S
ce C)
Ccutet fegion p Colleclor

chaiacderstîo

Salui eo e i o n

Cut Peqion
charactictio ha
CollecCoY Set
imolicated in imeicated
an
n ttecrrest
im est
o
basi
basic eqions

the Hgune,
above

)Active regton
Tegton
(C) Cutt
(cii) Saturahn
noinmalllL eployad fer
amleyed
ActtxKe
AcHxe reqèon
Lineas amplifters
collecter bane JuncH
bane cn
junehen
he collecter
Aetive Tegion emittew
e miteu base
while the
lhe
based,
everse
i iasedd.
JUnchen v forakd

Ponde fa
Aetve Peqion
2eqion
Poinls +o region
a ctive
end O h e
lowe he Colleclor
Ihe TE is o,
AL CuYrent

ereae
he mitteu elue t o lh
S a t u a a t curent CTeo))
CYTent is simp
PAEE D6
The CuYYent Teo so &mall A )
a)
ConP alao fo Yeati cal Scale T e (m 4)
hat e>cist ohen
Th e ct Condite0
ComMm bane Cor aat n

hoon beloo

0 -0 0-
Tceo Te
Te 0

Tepo leo

Reveee
Pevee Salunatten uYrent

The cmila curent mae ann above o


s)
to
the Lolleclor cunent Imaea n n
equal toIhat Oblhe
e cSeta lly
mcuantude
CUYYent
emtll
mole het he meqügible
no
4-) W
WL Can
curcnt
0 e
Yce n he Collector
ettect O
actve
Imdicat that, Ihe
cleazy
s) The
app>oeumation
"to he seltions
hip
Hst
andl Te im 5 actre feg on
betuocen Te
qiven
T Te
defimed as that eqion
Yeqton
Cutoft Colleelor
cuTrent 0A
OA
oheue the Collecfes
collectes ba
base
the
I 1he ccet o { t Y e g t o n Ih taan.
Ih taancister
unctions Oh
base emille
and biasedd
at bot ee»
DRoA
PaA

thcl eiun
Salu>eeton T eaOn deftned as

OV
chasache a1sho to Ihe let o Vce
Ihe
he
C
cY T ent
UJ ent
in otlecfes
E p p o e n i al
dmeieane
E OV.
Inaeane
towarel
as lhhe Vce
Vee
collector base
fbase
Caturaton egion h e
In ke
ji'nctionn
aae foso a d
bane - e m illea
and Raec that
chasacteaist n
The mput Cvce)
Co
c olllle
ceel er
r Ylq (Vca),
ft>ced
Yalue o e emittun
e nCne a n o
e

B- E Yoltaye
an lhe to
m a n a
closelu
O
mneCsCn
2luent
diod e chaiacteastio as houonn

47ie below,
Iema
TE (mA)
E mA)

1 YsE
0.6 0 7
VeeCr)
0-6
C
VeF C) Cb)
Piece uoise
Eipplid
Ca) Lincan
PPonelL

aPpaOach
Base to Emites
Ome a
hanciles'oN sttl,
an
amed
Voltaqe
oill be a
V e e = O-TV

PAGE O1
PooLle Colleels c h a a c t e s i s t i o

a) Seeima
lhe Dutput collecle LuTTent
esuLlHme
debehmime Ihe
IOY
and Ner
T e 3m A
he
chanacteislic it eleaay
Soln em
Imdical hat T Te Zm4
deteRime
he
lame chaaaetesiehi ,

b) Usimg he lemaiw-
collels cuent i TE
estima uced to 2v

at 2 WA
but Vce R
ble
changing
the VeB
v

Ete ct o Contimue to be
and I cnasactes1
sto-
outbut
he mpuut and JOV
c) om 4m4
and YeB
VeE Te Te 4m4
4m4 T
E,
detamine
e h a s a c t e a i s t i n
Te
(6 utput 0.T4V
soln VeE
4mA, f5m Slp
oith TE

Part n i ma P ch eteicti E
A)Depet
Siplfid modelie
TT, 4Nm4
4m4 TTe ,
ehanacteaisti
I5- owtput
a Cin-plufidmodelling

with T 4mA, froro


aylekel o al TE
Vee =
O.TV los

Atpha ) and TE du

de mode Ihe
evele
evels
mhe
CAdlerS
aR
x e ReLated b
Ho lhe maioity
uanitr called (alpha)

TE

DR RSA
De PsA

Ihe P chasncteaistco Suggeat


Even hough
prachcal devicen lhe leve o
that -1,
0. 0 to 0. 9
988.
alpha +ptealy e t e n d n am
no lhat

C)
T, + Tceo

Te TE

Te t eo

hen-,
c h a s a c e a 1 s t i o ,
h en-
e Ou-tput mentiomed

T o
rom
s auady
Tceo , is
T OmA Smal akd
ally So
Caslin Te
undetacuble im raph
T=Of ange
hen Te ,

Yaluen
Yc
a gtuationn

ATe
ATE vCA Constant
callecd
Commm benb
bee,
i malllt
ac alpha
Shwt -ctt, a p i l i cteen acla

iasina
Biasm COmmm- Vbase

TeON PmP
B

Vcc

pA6E o8
CB C o n f t q u k a t on
nh b e

Poepe icsima qic


be deteawumed
Can be
actve AeiOn Ihe momlnt
and accumi ma

thtV T 0HA

Ac im
Aansts to s
Ampl1y1 We now hat
T Pn P T TE Im

>E aetye e

R 5k

R Ro
V Fo CB Comtgattm
Yesistance
he ac mput
in detumined by P
np Cattn actton
OmwLm bane
chavaCteasic
quile
C o n aaatt an Small and vaato a m
lb- tD lOD

* op Tesistance deleimmed but p chavactetste


the Cusves he
high Cihe hoa1gontlmove
qule
quile
Ihe e s i s t a n c a ) and ypically razin-
xaain-
highee
Sok to IM

he Aiteence im
Tesistane v due to lheE
(mput LBase to Fmitu1)
foaward siased juncttm at
CBase to Collecte)
and Yeve>se biased junctm at Ouput
ATL
Ocing Ri o
V 200oV IOmA
Ka ATE

R 20-
Assumima, Kac I C I 3 Ts)
TL Ti = ID m 4
De DcA
DD DSA

(1DmA)( 5kn)
VL Soy

Votaqe wplipicatn
SD

A VI
20mV

Av 2so
value o voltage anpfication
Nole Typical Confiquuatm Vau
Common pase
So to 300
rom in alsays
ampliticatim (t/1.)
2) CuYYent
base Conliqunatin
lees han e Commm
css

) T e TE
actm pro ducad bbur
pao duca
ampliAng
Basie
I on a
loo o
cuYtent
taanseuing Combination oo
CDmbinattos

c E t . ohe
Tesidtanca
hign
htgo
esms TesuE in-
tuoo

tyanslu + Tislo: ransis lo.

Problem tansicer wih


Tfor a taane
I and
)Find
d e O.4 and
Te 044

e thou lhat
cslo, T +

TE
Te
TE
PAGE O
H O
H
H
DR SA
COMMON EMITTER CONFL6URATION

Commam veleence to both mput


>Emittes » OY

tcTmImals.
and output
Too Sls o chaiactectca ae aqa

mccesseRi
d
to deccrbe 4ully Ihe behavio 1
Ihe common- emittei Confiaquanh.

>One charactesho is fer p L

Base- Emill elt

chasatteusHo f a Tp
-> olk

Colleclar -Emitu
o a n s Istrs
Even Ihough
AatOm
e chkange he UYYent

con eveloped fe
Comn
Commo
Telntons
is s i l aPplicalsle
ConfiquAahsn
base

T + Te

Ycc
m B
>B

P
m

|VBB
VBB E TE
Ts
B m
B
P
E
Te mPT
tancis[s PA6E IO
PMp
taneis ter.
The nput chasacteatchu ane plot
Ys Ihe
mput CUYYent
Te VBE
a ranac O VcE (lp l )

The Dutput
characle atctiu aRl a
slot
D cu (Fe)Vs lhe P Vla YcE f a
Valu o Imput cuent CTB)
ActYe
I(mA) e g i o n

Te(NA)
SOHA
4-0H A S0- VeE Iy
YCE Obv
TD
60
30MA S0

20N 4D
30
-10 20

S20 24 6 *
vcEtot VCE C) VoE)
(a
-Satuvatom 1aqi0n
C o P-cso
- Cut of Yagion

(a) > Colleclor chasactesich

(b Base ehaactensH
chaaaclerici , magnitude
I6e ouetput
HA, mpaed to milli anu'e ru
P Te Im

Cuve D L a not as
s
hoi2ontal a

Dbtained fo Te in CB Cmfiquattes
meas Collecle Emite vla . silInhluene
maqnitueld o Colle cta cuTe RCA
DR RSA
The active Ye qion f COmmon Emitte
Cenfquraten ha oston o he pp

quadrant, Ihat
han qYeat Lneasuty.
riqht
im hith Cuave fo Te
he
The Tegion
paced.
and equally Spa
ea &aight
Ve sat Lalled
The
The reqion to he ft Ve

Satnaton aalom.
Common
miHu
m lhe actre eqion ohe
ihe c o l l e l i kaaejunchon
tpliti while lh emilla
Yevese iannd,
3uncthono or vdasd bion

Achve meqtom Can be employed fr


.

olaae, cu ent and poe ampltiaka

he olleelos chasacteaisi

O
shen Te
Te 0 CnfiquAatin, h e n Ih
ha
Commm
ban
Ihe
equd to 3eno, lhe
Imput cuvYcnt T
uwa eql Dnly to Ihe
ColleclóY CqreoE
So that he
CuYTent
atunttim
YeveYsee

CUTVe TEO
his ieence in
The Cason
dericed
deziced
chasacde<HO
Can
Can be
Colleclr

the
he eCquaiom,
through
T T+ T
DASE 1
oTet T) + Tepo

T + d Ta + Tes o

Te Teeo
1-
Lubstitutina, valu

ohen TeO Anps collela cu


0.116, Yenulina

d Lo Amps Teo
I0.114
I- 116

Iceo
O. 0 4

T 2 so Teo
in dellec urrunt
c e o : IA Ike
D.2Smt
&SD LU HA)
wih Te 0

collecle CUYYent eined by Hhe


he

Ihe
Ihe.
oill be
ndition Te ONA

Ie OHA
T Called a TcEO, fo apifi
catt eo
PRpose

DRRsA-
h Nole

ohen totneicles Suoi teh it


neployed a ,

han
han two Poin o Dpekaten intcret,
Ihe Caturattn
and in
One in h cut olt one

n.
he
The cut H+ Condi Hion should de ally be
be

Le = Om A o chocen YcE Yo ltaqe


lous im maq nitude
Cine TeeO
Teeo ypically
C Cm materiah cut o oil erit
ohenT OA er
Sutehin PupO &

Tarancislos on

Rmanium tansisBors,ut o tSo lehimg


thoe Comduiom
Pueposen oil be fined

that ereist hen eo

Impu haratensh

fer ce Confiquattn (he p set o


Peal by
a ppoumaled
chaactenstin

Yenulted in VeEO.tv
St. Linne equialent

lerel Te OMArnpe
fo
fo any
appaoach is halen
Sam e
C Contquatin
Te (HA) toansiste i
Picce i s e
The
N
Lincaaepuvalunt the VeE 0.Tv
Aiode chara.ck nstin
for any leve o
Bene 'urv ent

1 VeE (V) P-A6E '2


Numeical

chalace1ctit delesmine
delemine
and
Seeing /D
=lOV
and vcE
T Te 3oHA
mA
YcE (OV T 2 3.4-
sotn 2qHA,
deomine
d ekamine

c h a n e t enstiu
and
2) eeima p
VeE ISV
ISV

o-Tv
and
VeE
I
0.7y
C YBE
Sdn 20HA

T 2Sm4

Chea
Ihe levels O Tand Te
mode
dc
Relalad b tam b
al

Te
5D
S 0 tO Oxe 400
range
tom
Hepically
most in mid range
Loilh O 200, the
w
oiit
lhh
a
devicce
Ihe
he
+r H
2 0m
tmeea
uYTent
collecl
uYrent.
madnitudle o a
Bnanee

Situatom
ac
Ts
ATe
Pa ATe V ce onsant

DR.S
be developed betoeen k q n d
Relattonshp
Relattonchip
umg the
Can
basie Telationships Intooducad

So fa
now

we nDo o

4-
Te
o

alo bnow that


w

(S)
T TtB Substiuting ( ) 4) in

T T + T

&d he equation
dividinq both

14+
o

Cl-) = a

+1)
-
d

PA GE 3
e alno lnoo hat,

(8)
-

im4 an equevalence an

TeEO Tceo+)

Teeo PIeo

an I parameli becaune it provide-


an

dinet i n behoeen level oI5e Input


ci 4o a Commm enitn Cmltqurakm
and ouutput
hat Ls,

ince,
E + TB

TB + Te
Cio)

Biasn

Ves
Te
D R S
The fost step to indicalë e Lirechco

Te
LE an establushed by e TOo in Ihe

tansis symbof
The olh uY Tent are Inoduced a shoon- ,

keepinga mind Ihe KidchoH's uTest Law


Lau

that

Pinalllhe Cutplien ane inbodueed ol polaatHn


that
hat will Support he esul Hng diveetk T
T
T to Conplet ke pickue.

The Samc approaclh Can be applied for


Pp tancstos

B
P

COmmom Collector Conftqurata

E
se
Te
B

YEE YEE
P

Vee

sP

A6E 14
The thizd and ftmal toansis
icles Conftquzattco

k e Common Collecles Conftgu>atim

p>imazry o Ipedance
4 med

pupose,
Since it hanhon hig
high
matehima.
and o p pedance
peAance
mput
puut
CB S CE nfiquaten
posit
to lhat o
Common lollecter
chaacte>1stin o
Ouput mm
Com mo
o vn

are lke Same fer


Conftau>atoo

emuttea Confausa
chasactaisho
Colleele p
7 Commm

ai a
plot o I Vs VcE ange °
alua o Te
Came Con on
P Chaiac{etetia

emittt

ce Cfquraftap

DR CA
DRRSA
NumeruCals
Imp OTmlln

T e

2)

ATE

4) T TE a
s) maycoiy t comi nmty-
Colleclos cu u minmt
Lco>

Cann oilß emill tpen


cha
T eeo

TeteBo

a Te Teso
Av

) Ie I-
ATe
to) Bae AlB
Te

T (B+1) Ig hhybzid mod


cuvvent 9an
Bdc hFE FEfs3and
in Cmmm emiten C a y a e .
H

on
DR SA
shouon belbw find
2) Tor lh-e ut
PAe taansistor
a)Valwen o de
deused Tb 5mA
6m A
b) Valuen D Te
Rc
MM-
OHA
T.2ma
Te
RB
Yee

Seln
e

2010
Te
de 6o
O

I+6o
I+ede
A e .9E4|

T+Ts
Te -3
1 2 x 1 o +2Ox!O

Sm 44
Sm
7 7for
Te
I SmA 83.33m
Te
Tp Bde
60

PAUE-0
DR RSA

3)Find de s tan.cisr
AcIB and
oilh 2.SmA and TE 2 55mA

Saln de
Te
2.S mA

2.SSmA

d e 0.1804

T + e

TE - Te
Te
2 . S s -2.SS

Te50r|
2.5m A

de sOKHA
Te

de Sso
3 mA and
A oansis las cht hasT
3.03mA
Pind Pd s tannsisier mad
Te ftnd
In bane CuYTent,
Assumin no change
cuTTent ohen Ihe
he
Colleela
he
Teplaed wilh me One
panciclos
B o
DR PSA
4) som Conld. Neo bncislo

0.03m A
Te
T+Te e
TE

TE Tee TOx 0-03

3.3 -3 T 2 Im A|
T e 0.03mA-
Tc
de
3

0.03mA

deleo

lhe Yalue T and Te fe


s) Find
and T 5oHA .
oilk de :
O.11
tarneisles
torcqneieles used.
u sed.

Tind Bdc Ihe

sotn Te dde
I.61m
.41
Te
6 2-m
1- dde o-1
T 16TmA

6 2 mn
-0.91
Te
T I 6mA
BAc 32 4
PACGE O03
6)
D6 RSA
Tind Te, xd and Ble a toansi s ler uoil5

5. 25mA and Te 00HA

b)Tind Ihe meo Te fo an T ISmA

Son TE T + Te I 1SmA

Te ooH + S.25m

1E S. 3 Sm t
Te28GHA
Te 5.5n

S.3S
Nole: Tor mwaKe
TE collectoY cuYY ent
in

de 0.aet3 rom S.SmA to ISm A


The bane cur 1ent
5.Sm
Ycquied to mueane

fm loHA tD 8 6 HA

| S2. F
Tind le and lE fos atnsisles oilh

de .49 and Te oHA

Soin TE Te +T
Te
1 8m + 20H
de Te
1- dde e2mA|

X OxID
I- 0.99

T 4EmA
ekt
DRRA
Certain oran sicles ckt,
) Tor a

and Te 200NA.
I 2 . 4.2 m
de bde
Bde
a) Find Te b) ind
c) Find T ohen SoHA
he amises

T+

14hm + 200H

E 1 2m A
I.4-2

TE 126

d e: 0.1s4

2 4 2

Te

de 6
ohen ISDHA

C62. 1) Co. 1s)

.3tS mA
ha
T 6mA qnd
l6mA
taransiclor ckt
e)A
8 )A Ceatain
mew valua o and
Find
TE l6.04m A. he ansister
Ih Same
bane cuvent
i
I. 25.
ilh a tncIs [z o
Tplaceee

PAnE Obu
Soln
16.0 4-m4
16m A, I =

Ip F e
0.04.m A-|
Te
fr eicinq tdneiser

Bde T
Te O.O4

PAc 2S
ohen
S x 0.04 mA

T lm A

Te -CI+0.04) m A
E = T +

Te 4mA
De RCA

DC BIASIN6 -BJT

Basie Relattonships toancicl-s

BE O-Tv

fohe applicahon o d c Yolkaqe


Biasn4 and volage.
iced
level o curTent
to estbizsh a

Opeiatine toint
Maumum colleclo CuTent Tema
olledor to emitte vl VcE max
Marimum
Marmum
Pown
Consheint
Peman
Cut ot Yeqton TaOHA
Satunaton aesen YcE VcEsat
Ihe device
device Oould iniHally
bias
mo
PtA 3
A.
hcuLtina
in pt
be
be Completely ft
davice Cand
Cand
h
CuYYent throua h
(Zeo
(Zeo
auoss t)
Zeuo voltaqe
t Ihe
lhe cht, Ihe
clt, he
i applied
Pt B - A sl cuTTent and veltaqe b»*
device oill to
to
device
he
PE lloina
he oeratn -ve
vaniatom

tve and
CAct anmplito bot6

Imput siqhal

PA65E
ptc ould allow Com e
+ve and -ve
asiaton
to peal
peak value
v alue
but pea
output siqnal
Oh lh PaDrumity YcE O /
would be imite4

Some LDnleY n
aho raise
® PEC
eatm
lineaitu
Inodueed by tthe
he

lhe non
abt Co
Ih spaci'nq be4 T
hat
fact Yeqiom
rapidly changing
ohac
lhe un

to e n e oh ee ihe
It prelernble
o ensuye
constan E to_
f a i t y constan
ensuYe

Oh the device enttre Sune


catmoveA lhe ente
that Ihe anpli
n Same

the
mput <la
move
mOve Lneay
neav spaunq-
Spaunq
B i a Teai on O
Pt imea
umca opention
6 pernion.
move
thufore
andd mea

device operaing pt
ses he
pt D lével
and poen
e
volq
the
Seems
ihe e s t ob eaating
point B, hiehore
and lanqest
laaqest
Linea 7ain
i n
terms
in D
potnt and
CUYYent

POEsibl e vollaqe

DR RSA
lemperalune cawe he device parameler s

as
toancictor
cUYYent qain CBac)
CBae)
Such CICEO) to dhaqe,
CuYYent
tncisle leakage
and

Tesults in inacannd
muearnd

ea
tempealuues
Highes thucby hanging.
device, thuby
rent in lhe
CuY
Leaae i a n n g metwcau
Condditon cet bu bia
opeiatng
the
the
mut_diio
providle
TetuoceL desiqn
The Biasing stabi üy
so
hat
+enpealüne
a dugtee o in
in uiniwum
i nimum

chanas Nesult
Nesult
changes
epealune

th
the
epattma Point
in he
chang
ohe p
peatng
eiatng potnt
poinb
he
munt@nance

The
The facter, S,
etabi ity
Can be speciftud by chanqe m

ohich ndi calës he deqree+mpeualue Vanaten


variaten
tmealuue
d uc
d e o
peaing
peint
lineai

be
bialed in i huct be
BJT
to
toy
aqionon,Ike
ke
iollou
actve
opeating

tsue ' be
b e foo
fo» oa
aasd
d
muct
junchoo
lle bias vla.
(D
() Bace
B ace -Em eaad

biased oilh e sulHng


abt D.6 o o. t v TereSe

mucl be
unct m
Base.
collecler

ilh
everse
bias
i as Yotage
voltaqe bein
Deing
i'ased
limils o
device
device.
Wax
value wilhin
aA

PAGE I17
Calay aton and
Operation in Ihe Cut ot ,

charace1sica
BJT
lineay qtons Ohe
nca eaion

bianad
BE jun c t e d
Revese binsol
BC

Cul ot Peqlon
RaxeYse biased
biase
BE junctn

salurahm 1ee
iasec
BE Junctn fuod
fwd biaied
BC

Duletent Biacing cls


ce Bias Cht
-Bias
4) ice d or Emilla stabilig ed
bias clht
b) Colleclor -base Bias clt

bias ct
ividec
c)
e) Vollcqe
1
ensuve Constant
Constant levels
evels
muct
Biasnq cht
and Voltaqe YcE 1eaad less
VcE
p
6 tPE
CuYYent T
YariaHon
o t tenup
er
neeaallle
ennt
bias cii p>ovides
ivide
Yoltaqe
Yoltae
and hence it
it
and levels
e YCE
stabiity oansistoss in
in
uced bias
most
Comny

anpliHu eilg

De RSA
DR RsA

Base Bias
a
fizeed Bias
oVce Ye

Re Te
x A
VcE YcE

Ves YBE

Emitu
Base
KVL +o
Applying
O
+YBE
-Vee + TeRe

YBE
Vee e Re +
Vec YeE

Re
0-
o -3
3 v
Y f 5e
stlicom
s ilicon
and
or
VeE
VBE o. Tv
Yce Ye
Ucuall
Yee
Yce
YcC
Te
R qu
q ua
antt
iiHHa
a,,
C
loonnsstta
annt
t
bii
as
Ra u base b s
aRe
base
Vec Hence
Hence
Since
Since
q
quua
annt
tiiy
y..

a
constant
cuYYent
bias.
is an firced
called
also
is
cuYYent
Colleelr

PAGE 18
Collecli o emitcu vl4. YcE ob lained b4
kVLes colleclor emi ll ct

-Vee + R e + YeE
=
Ob

Vec Re +YcE

VeeTe Re
YeE
BIAS CLt
Emille strb1lized
Yec
Bias n|w Concishs
The
ELRe Y o o an emi lle Tecisteor

C to Impaove ihe stabi lity

lhat o fced
level ov e
C bias ContiquraHon.

Base E m i l loop
kVL
Appying =O
-Yce + TaRB +TEREBE
we tnow hat,
Tvee T Ce+ 1) Ts
e
Vee +Tp Re +((+ D Te )P -VaE 0
Ned
oping vinq
behen Vce-Vas
The Herune
Te
ThiTe Ts dblined4 Re la+1) RE
ffieed bias ic

teem C+)E
DR RSA
DR RCA

Colleeles Emille loop

O
Vac TeR+Vec
RE - V E
-

VCE I
Yec
-

Te CRe+ PE)
VeE

VB TE'R E
Ve VcE +VE
No AeAition o Emill
de Bias Ye Vec -

T R
esictance to Ihe

bIhe B pzovides impoved Ve Vee - Te Re


the dc
Stability , that i
VeE+VE
bias cuvvenls and NDltrge

Remain loss to uohee lhey


OL et by h cet Cmduton-

Such an n p enluuw and chany v

Dividen Bias
Voltaqe -
bias Conficrusatons he bias
bias
In lhe previous

and
a nd voltaqe VeE w ue a functn oL
CuYYent

CB) o he tansictos
Cuvvent qain
ilcon
Lensittve especialy fes
s i n e ets tenmp
Sinu
is not uwell
actual valuue o B
taansictors ,

deciaable 4o
t o deva
deve lot
lop
dined, it would be
less dependnt o
bias cet hat
a

Independent B.
pivides
Divideu Bias
Blas
ciceit Yoltage
Yoltage
E Such

Ct

PAGE I9
Vee

Re
Pt
.Reslh1
Tca Tea

VcE VCE
Detining & pt f
Yl4 dividu bias Yoltaqe divida blas

Conttquuatto
ase p»apecy hose
cit paiam eters
Ke
Can amost
Reultina o Veee and
leves ce

be
be indpendent o B
level o Tee and
p
7 t pt i afin ed by
chown m a u e
VCER
LevLeve TBa
TBA oll chane oith chane in ,
on he characlexisha
but lke pesatinq point

ce
by ce and Yces Can Yemaun fire
defined
uriut paam elers a
t h e Popes
ployed.

DR.R,!
RDCA

Too
Too me lhods hat Can be applied to
anaa
the
the Vollaqe ivide
conf
Conftquralion

Can be applied to any


1) Exact method.-

vollaq e
ividu Coniquvat
Can be applied onty
2) AppaO>timale melhod
aae phtied.
specifie londitiow

PpaDEmale method peamls moYe divect


dlivect

with Saving in tme a n d enuL


anatyIS

Exact mayeis s t stcp


Rth
: DeBexmine Kth
Voltaqe Sourca
R
R B t ieplaced by
ww
shoat cht
Ye
.ch
Th equivalant

RTh RlR R2
Redonoing Ihe nput
side o Vhe mo

Sccond slep: betumine Eh


A e t e u a n e d t o
he netwc
mefusca
au
is
CourCe Vee
Vla in
deteewined
deteemin ed
pen
ct
hevenin l lq.
v

ule
ividu
RI APpling volage
ww
Ra Yee
_Y Eth Eth Ve
Rt R
Kedr aon as hoon
The hevenin melo e
in ftause below,

Rth B

VBB

Eth

clect wise lire chen


Apply ing kVL in

- E t h + TeRth+VBE + Te RE O

Substtu Tp CBt) IB

solvina Te
Eth-VeE
Te
Rth + b +1) RE

he Yemainlng quanttu
Omce tnO
noon
be found in Sade
Same mannen

h m Can
bian Contc4ntt
Cohunito
developed in E i ll
an
a

V CE
VCE VeeTe CRe+ RE)
VE TERE
Ve - VE

Vce TRe
Ve VcE +VE
Ve E t Ye
VccTe Re Vei

TRDCA
Numeical
Vcu and
biac Voltage
Delceminc he dc
d c
Aivides
he volHage dieid
the CAVYent
Confiquoaton
T for
shouon beloo
beloo.

Given-
BelOkN.

Lokn RE sk
31u
R 3qk
R 3.4
V VceB -14D Vec +22VN

3 1k 1S
50HF
k

VcE
and Te
Sotn To Calcull

VeE Vee -
Te (Re + Re )

T
T= T e , Te ?
ETh-VBE Efh ? Rth
Te Pth+ CB +1) RE

RVee 3.4lo
E Th 39%10+ 3.4xtO
RtP
ETh- 2v
31x10 K 3.1x1
39k0°+ 3.ax10

|Rth 3.SsLn

pAGE 2
Eth and Rth n
Subhutng

RTH +CB+1)RE

2V-b.tV

3 . S S k t C140 +1)C1:SL)

Te 6OSHA |

(1 40) L6 oSHA)
T 0. s5mA

Vee Te (Re + RE)


l.st)
Co.sSmA) ( 1ek+
22

VeE 12.2v

Approrumale Analycis

secttn o he voltege divida.


The mput
Can be epYenuled by nw
Cmfiskatn

shoow beloo

FvaR CRi R )

ct datamuning
Patial bia Ve
DR.D CA

Resicane R I6e wivalent reaisland


base and qnd o toanstsles ih
betuween
an Emit resstanC R)

The Tetleced Yea<tane bethwcen base


bae nc

emilln dehined by Rt =
+1) RE
Ri Ra
TB << I Ccu alwcys Seeks louo Tuistance path )|

T
We acept he apaoumaicn that Tp
Amps Conpaucd to T T
eccenti aly o

then
ae Concidned a ceain
T Ta and R&R
elemen
he base
is actaaly
Tho
Ih Voltage P, ohich

V o l t a q e ,Can be letumined
dby voltqe

ivides
PYcc

Since R- Ce+1) RE R
paimetiaun-

R lORa
t t least lo time
time
The i eela time RE
hcvaluu oh R lhe ppaoximal ppoac
Can be pied oilh high daate o ALckau
pA&E 2
detamIncd, Ve an be CluLld a

Omce

and
Tca
Colleel to emittu vla

Nce ke Te RE
VcE
Since TE Te

VcEa Yee- Te CRe + RE)

VE tt +o CE Cauat
Nole
wan not
t
wan

pea
and Te
don not
Can
deteamined
deteamined by
by.
Calullud
6 pt
ndependent o
Lco a nd VeE )

inng appooimale
Ihe
Ihe NumeTcal
epaat Soluiow o TcQ and
mupane
analy s
VcER

soln Testingr BRE loR


10 (3.9ka)
( 4 0 )Ci sL) >>
210k- 3 L- Satie

DR RCA
R Vec

R+Ra
( 3 . E n ) (3lv)

3ttn+2.qle

Ve 2v
exact
e x a c t analy
ahaly
detcamined mg
he
he VB nd Eth

Same bolh Me hod


betuocen
Pamas itesence analysi s. that
enact
RTH
h efteet ok
and Ve
Sepealnn TH

VE V e - Ves
2v01

VE :3u
Ne 0.S6Tm 4-
T TE
Cnpauad to o-8 Sm th act anaysis

naly
VecT CRz + Re)
VeER
C1oLn+1.sta)
2V (o.86txlo )

ER
V 1 2 . a v obtained pom exact mehod

PAGE 22
ÞR. RSAA.

THE e Transistos Model

and Cenbolled
diode
he e model Employs a
behaoi Ouu
behavi O s
uplical he
CUYYenl SourCee
Sourte Ho
Inte re&t
a Kane istor in Ihe agio 6
Source One, whes
Conbo lled CuYret
CuYYent S
Soou
unnc
cee aa r e
he
cuYren t
the peAanm
etens o h
heer
ree 'In
'|m LKe
he
e
else
a CuYYent
uYYent
Conl>olled by
networu.

a relvsid -lo an
fransislor ampifiers
BJT
Conrolled devices
CUYYent

emulle.
e m u l e s . Thu
Thy h
n lhe
e
everce
RE land fohf backoad
backwaRd
o hen
ohen looteing
oulinq
e h a j a c k e u c h c

Patmau
'atmay
Commn
Emille
millen cont 7UAal
Contguaaiiy ,.

in
at a aLnsisto
ansisto
u i a t n , baoe
Lontqujatn.
base is
ig h-c
he

Commm Lmille
n
collecler output
and the
mpuut
Te leaminaln aaa lhe
Input mille tuminad
base and

ane o llecli and


output
emille tuamnah

P comm betocen
B 4 Emille u

and he Dulput
he nput

Pos. ° he aplit

Commm Emilu BJT

Jaaneisl.
PASE 31
Substtlulima he Te ceuiralent cht |

il csull 1m
Toandicto
mpm Conbolle
The cuYTent Louru

HIl cOnnealed balwee


Colleelo
( ) Te eTL the bse and

tumInuh.
Lonnected
e i o de
The
Th
betocen base and

emillea amima

e e
Th Con ruuao
n Ihe
p p r o x m a i modal CuYYent

the
the ase
nput uvrent

fa Ihe CE Cmtqwain

Output uYYent is still


Tne
e bnou that

Lurrent
Liode
through l h e l i o d e
ned byt
The
The

e T +

C-)
T Cb+1)
tpically B>
C3)
Fe

R RA
DR RsA

mput mpedance decamIned

V Vbe C4
T
The Nolcq he diode
be is asoss

TaLelan ce as shown belouo,

The level o eAe


SH detamined bt

T I, () =^7, CuYent

Vbe TYe
Te
rom
beYe

e e

| Vt =
Nbe Te 4-)

e
Zt > Z Telo
he mpul Impedance as shouor
fig
beloo L imes Ike Value ee
0 C
Resietive elem ent in Ihe

enill lea Telected intoo

the Inpue lt
mutplyng
Zt Te

PA6E 3s
e 6.5 ISo IKe nput
aput

Ipedance on m ecnedto

BYee Cieo) C6.S)


Z

o CE on
Confiqaallen, -+ypical ValuN

oy Z
Z dined e ranqe rom
uwilh maL
m a
hundaed +o k
about 6- kn

Outpul pedanL
slope lhe lurve
Tm A) 40 MA
30HA macasen.

2014 naca in
OHA t e e p e hslope
x less Ihe level o
TB OHA
Oudput lmpedane (Ko)
slope 7o
NCE
nol mclude ouput
* The eAe mode do

bedance
VeLlUL
TYpica
4-0

Ta Ihe model Lhown beldo,


0, Tis DA
h e applie4 la
E p mpedante
Zo
-oe CE
DR RsA
Au lo lqnore e
the Cmtatbull n
lnpe h w
in
lhe Ye mole he oP
aeined by Do

CE Cniquvaleo i l
Yollee
a s s u M p t t on

To and
Tes he deined e ettm °

Polanh No
Yo
|Vo =-TRL
T T T
TT
CE tancisla
RL V
2 on
nnpl ie
Ih
lhe f ct
fact lht
ht
ech
1{eeh
Simsly
The
Ihe minus ign volteqe Vo
voltage Vo
a
etablich
would
Lieetoo T
ok ppocilz plamty.
T R -BER
Vo =T, RL

I z ;. B'
V
Vo TRL
Ay TL e

RL
Av e

PAGE 37
he aesulima i
80
eve aln hat op s P Volles a

Ot phane

ain s he Conftqutatin
The CuYYent

Ai T

Nofe: mP
A CE T Do
2Gmv

Te
npul pedan e

26my, I
lac
CUCnt Ip culhagh
Collecl
l n p adanu o
oulput
Can
Ca
valun he CE Cm u n t n
Tpical
ha mod e l i
Cons' e s d n e tha A

be
mput Inpedanta high Votaye
leve o
n
out put edante
and
and Cuent aan
to be neludd in the lw tmalyis.
have
hat ma

Ko
e
e
CE Fenoiste,
e moel
Ye fer the
Cafiualu
DR A
DR RSA

Pooblem

7iven P12-0 and T =2.2m er a

. delamine
delumine
ContiquYadm ilh Y o
CE
aPplied
4
a) ) Z i b) Av i lord h
A 2 load

Salulio Given dala,

T 3. 2m A

e
26m
26mV
2. 210
E
Y e 8 1250

Z Be
12S)
-
(120) CS.

Zi1s
2k

b) Av &.12S

Av 246.1S

)A To P 120

PASE 4

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