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Ece113 Lec15 Amplifier Design For Specified Gain

The document summarizes the process of designing an amplifier circuit to achieve a specified gain. It discusses designing for maximum gain by providing a conjugate match between the transistor and source/load impedances. It then covers designing for less than maximum gain to improve bandwidth or achieve a target gain, by intentionally mismatching the source and load reflection coefficients. An example is provided to demonstrate designing an amplifier for 11dB gain using given transistor S-parameters.

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50 views26 pages

Ece113 Lec15 Amplifier Design For Specified Gain

The document summarizes the process of designing an amplifier circuit to achieve a specified gain. It discusses designing for maximum gain by providing a conjugate match between the transistor and source/load impedances. It then covers designing for less than maximum gain to improve bandwidth or achieve a target gain, by intentionally mismatching the source and load reflection coefficients. An example is provided to demonstrate designing an amplifier for 11dB gain using given transistor S-parameters.

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許耕立
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© © All Rights Reserved
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ECE 113 Lecture 15:

Amplifier Design for


Specified Gain
References: Bowick, Chapter 4; Hagen, Chapter 4;
Vendelin, Chapter3

1s1819 Revision October 2018


Recall

Fixed for a given transistor

• Maximum gain is realized when GS and GL are


both max
• Input and output matching should provide a
conjugate match between the transistor and
the source and load impedances.
Design for Maximum Gain
• Maximum Gain will occur when matching
sections provide conjugate matching (and
lossless) of source/load impedances and
transistor.

• Gain is maximized and is given by


Design for Maximum Gain
• In general case with a bilateral transistor (𝑆12 ≠
0), ΓIN and ΓOUT vary with each other

• For Maximum Gain, simultaneous conjugate


match must be performed
• Solve for ΓS and ΓL simultaneously
• Express one in terms of another until we get
equations using just the S-parameters (possible
since bilateral)
Design for Maximum Gain
• Source and Load reflection coefficients become…
Design for Maximum Gain
• Solutions to ΓS and ΓL are only possible if the expression
inside the square root is positive
• This is equivalent to requiring K > 1

• If the transistor is unconditionally stable, the expression


for maximum transducer gain can also be re-written as:

“Matched gain” (K>1)

where Maximum Stable Gain


(K=1) Easy to compute
NOTE: Simultaneous conjugate matching of the source and load is
not possible if K < 1 (conditionally stable)
Design for Maximum Gain
Unilateral Case
• Design for maximum gain becomes simpler for
the unilateral case since S12 = 0, Γin = S11 and
Γout = S22

• For simultaneous conjugate matching,


ΓS = S11* and ΓL = S22*
Example: Design for Maximum Gain
• Design an amplifier for maximum gain at 4.0 GHz.
Calculate and plot the input return loss and the
gain from 3.0 to 5.0 GHz. The S-Parameters of the
transistor to be used:
Example: Design for Maximum Gain

• Check for Stability at 4.0 GHz

 = s11s22 − s12 s21 = 0.488 − 162 (   1)


O

1 − s11 − s22 − 
2 2 2

K= = 1.195( K  1)
2 s11s22
Example: Design for Maximum Gain
• Check for stability at other frequencies

• Unconditionally stable at 4.0 GHz and 5.0 GHz,


Potentially unstable at 3.0 GHz
• No need to plot stability circles for 4.0 GHz, but
might need to verify stability at 3.0 GHz after
the matching design for 4.0 GHz
Example: Design for Maximum Gain
• Source and Load reflection coefficients
Example: Design for Maximum Gain
• The effective gains would be

• Overall transducer gain would be


Example: Design for Maximum Gain
• Matching Network can be done using the
Smith Chart

• We want to transform 50 ohm source/load


terminations into reflection coefficients
Design for Specified Gain
• Design for less than the maximum obtainable
gain FOR improved bandwidth or just to get a
specific amplifier gain.

• Purposely introducing mismatches to reduce


the overall gain.

• How? Plot constant-gain circles on the Smith


chart to represent loci of ΓS and ΓL that have
fixed values of gain (GS and GL)
Design for Specified Gain
• Simplest is assuming unilateral case

• Maximized when
Design for Specified Gain
• Define normalized gain factors

• So we have
Design for Specified Gain
• Similar to our approach in finding stability
circles, the constant-gain circles with the
following centers and radii:

• The centers of each family of circles lie along


straight lines given by the angle of S11* and S22*
• Note when gS (or gL) = 1 (maximum gain), the
radius RS (or RL) = 0 and the centers become
S11* (or S22*)
Design for Specified Gain: Example
• Design an amplifier for a gain of 11.0 dB at 4.0
GHz using the transistor with the following 𝑆-
parameters:
𝑓 (GHz) 𝑆11 𝑆12 𝑆21 𝑆22
3.0 0.80∠ − 90° 0 2.8∠100° 0.66∠ − 50°
4.0 0.75∠ − 120° 0 2.5∠80° 0.60∠ − 70°
5.0 0.71∠ − 140° 0 2.5∠60° 0.58∠ − 85°

• Assume that 𝑍𝑆 and 𝑍𝐿 are equal to 𝑍0 = 50 Ω

20
Design for Specified Gain: Example
• Stability check
1 − 𝑆11 2− 𝑆22 2 + Δ 2
𝐾= >1
2 𝑆12 𝑆21
and
Δ = 𝑆11 𝑆22 − 𝑆12 𝑆21 < 1
• Since the transistor is unilateral, the transistor is
unconditionally stable

21
Design for Specified Gain: Example
• Solving for the maximum source and load gains
at 4.0 GHz
1
𝐺𝑆𝑚𝑎𝑥 = 2
= 2.29 = 3.6 dB
1 − 𝑆11
1
𝐺𝐿𝑚𝑎𝑥 = 2
= 1.56 = 1.9 dB
1 − 𝑆22
• Solving for the gain contribution of the
transistor
𝐺0 = 𝑆21 2 = 6.25 = 8.0 dB
• This gives the maximum unilateral transistor
gain:
𝐺𝑇𝑈𝑚𝑎𝑥 = 3.6 + 1.9 + 8.0 = 13.5 dB
• Excess of 2.5 dB from the 11.0 dB required

22
Design for Specified Gain: Example
• Choose 𝐺𝑆 and 𝐺𝐿

𝐺𝑆 𝑔𝑆 𝐶𝑆 𝑅𝑆
3 dB 0.875 0.706∠120° 0.166
2 dB 0.691 0.627∠120° 0.294

𝐺𝐿 𝑔𝐿 𝐶𝐿 𝑅𝐿
1 dB 0.806 0.502∠70° 0.303
0 dB 0.640 0.440∠70° 0.440

𝐺𝑇𝑈 = 8.0 + 2.0 + 1.0 = 11.0 dB

23
Example: Design for Specified Gain
But choose points
closer to the center of
Choices of ΓS and ΓL Smith chart to
are not unique. minimize mismatch
and maximize BW.
Design for Specified Gain: Notes
• Unilateral transistor
• 𝐺𝑆 and 𝐺𝐿 circles are independent
• Γ𝑆 and Γ𝐿 are independent
• Can be used to estimate the Γ
• Not the case for a bilateral transistor
• Bilateral transistor
• For a specified 𝐺𝑇𝑈 , Γ𝑆 will have a
corresponding Γ𝐿 but will still form circles
• More complicated to derive
• I’d rather do this using a RF circuit simulator

25
Electrical and Electronics Engineering Institute (EEEI)
College of Engineering
University of the Philippines - Diliman

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