Design Equations for Tapered Microstrip-to-Substrate Integrated

Waveguide Transitions
Dominic Deslandes
Department of Computer Science, Universite du Quebec a Montreal, Montreal, Quebec, H2X 3Y7, Canada

Abstract - This paper presents design equations for the

microstrip-to-Substrate Integrated Waveguide (SIW) transition.
The transition is decomposed in two distinct parts: the microstrip
taper and the microstrip-to-SIW step. Analytical equations are
used for the microstrip taper. As for the step, the microstrip is
modeled by an equivalent transverse electromagnetic (TEM)
waveguide. An equation relating the optimum microstrip width
to the SIW width is derived using a curve fitting technique. It is

)
shown that when the step is properly sized, it provides a return
loss superior to 20 dB. Three design examples are presented using
different substrate permittivity and frequency bands between 18
GHz and 75 GHz. An experimental verification is also presented.
The presented technique allows to design transitions covering the ...
'"

Index Terms
transition.
-
complete single-mode SIW bandwidth.
Microstrip, substrate integrated waveguide,
h

Fig. I. Configuration of the microstrip-to-SIW transition.

I. INTRODUCTION microstrip matches very well the field distribution in the SIW
The Susbtrate Integrated Waveguide (SIW) was proposed [3]. Despite that, the design process of this transition requires
ten years ago [1]. In its simplest form, this waveguide is multiple full-wave simulations, because optimization is the
composed of two parallel rows of metallic posts inserted in a strategy of choice to solve this problem. Indeed, as of yet no
plated substrate. If the distance between the posts and their analytical equations have been proposed to speed up the
diameter are chosen properly, the energy leaking between design process.
consecutive posts is negligible, as demonstrated in [2]. The This paper presents design equations for the microstrip-to­
particularity of this novel transmission line is that it bridges SIW transition. With these equations, it is possible to design
the gap between microstrip lines and metallic waveguides. full bandwidth transitions without optimization or full-wave
Microstrip lines are very compact, easy to integrate and low simulations. They are validated with three examples at
cost but provide a relatively low quality factor, between 50 different frequencies, using different substrates. An
and 100. Metallic waveguides are, in comparison, bulky and experimental verification is also presented.
expensive but they provide a high quality factor, between
5,000 and 10,000. The SIW is an intermediate structure. It II. DESIGN TECHNIQUE
benefits from the very low production cost of the PCB process
and is relatively compact. It can also achieve a high quality The microstrip-to-SIW transition is shown in Fig. 1. If the
factor, in the order of 500 to 1,000. Thus, the SIW is an pitch (P) between consecutive posts is inferior or equal to
excellent candidate for the integration of high density twice the post diameter (d), the leakage losses are negligible
millimeter-wave circuits which require a good quality factor. [2]. In this case, the SIW can be replaced by a dielectric filled
In the last ten years, several SIW components have been rectangular waveguide. The width is then equal to ae, and the
presented, including filters, couplers and antennas. These permittivity is er- This equivalent width can be computed
components, however, must be interconnected with planar using the method presented in [2]. The SIW is then replaced
structures in order to provide means for measurement and to by an equivalent waveguide in the following design steps.
allow the complete integration of SIW components with active The transition can be broken down into two sections: the
circuits. The tapered microstrip transition [3] has largely been tapered microstrip line and the step between the microstrip
adopted for several reasons: the microstrip line is widely used; and the rectangular waveguide. The combination of these two
the transition covers the complete bandwidth of the SIW and parts must provide a good matching over the complete SIW
the performances are better when compared to other bandwidth. As for the conventional rectangular waveguide,
microstrip transitions [4-7], or coplanar transitions [8-9]. Due the bandwidth of the SIW is defined between 1.25fc and 1.9fc,
to its very simple structure, the transition has very low losses. where !c is the cut-off frequency, computed using the
This comes from the fact that the electromagnetic field in the equivalent width, ae•

Authorized licensed use limited to: ULAKBIM UASL - ANKARA UNIVERSITESI. Downloaded on February 16,2024 at 16:53:50 UTC from IEEE Xplore. Restrictions apply.
978-1-4244-7732-6/101$26.00 ©2010 IEEE 704 IMS 2010
 We

2.5

�: 2

a) b) 1.5

1 ��L-�__�__�__-L__-L__-L__-L__�__�

0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95

08] 1 '"-1["
/
E Er

", 1 "
Fig. 3. Optimum dimension for the microstrip-to-SIW discontinuity as a
function of the permittivity ratio.
ma:<netic wall - - - -
I
- 1 5 ,-
--�--�----,
electric wall --
c) d)
-20

Fig. 2. Equivalent topology for the microstrip-to-SIW transition: a) co

:g, -25
microstrip line, b) waveguide model of a microstrip line, c) top view of the
microstrip taper d) microstrip-to-SIW step. en
-30

A. Microstrip to Rectangular Waveguide Step -3 5

1.3 1.4 1.5 1.6 1.7 1.8 1.9 2
The microstrip to dielectric-filed rectangular waveguide Normalized Frequency
step has already been analyzed using a mode matching Fig. 4. Return loss for several microstrip-to-SIW discontinuities sized
using the proposed desing equation (5).
technique [10]. In this paper, the microstrip is modeled by an
equivalent TEM waveguide as shown in Fig. 2b). The
In the structure shown in Fig. 2d), the scattering parameters
continuous lines represent electric walls and the dash lines are
are independent of the waveguide heights. The scattering
magnetic walls. The permittivity of the dielectric in the TEM
parameters are then only dependant of: ae, We, ee and er'
waveguide is equal to the effective permittivity of the
Waveguide structures are scalable: if the structure is reduced

r
microstrip line. Recalling the well-known result [11], we have
by half, we will get exactly the same S-parameters at twice the
in a microstrip structure:
frequency. It is then possible to normalize the frequency of
Ee
= cr+1
2
+ c 2-1 ,j1+12h/w
1
(1) operation; the S-parameters are consequently related to the
ratio a/we. Also, if we maintain the same ratio between the
The width of the TEM waveguide, We, is calculated to effective permittivity in the microstrip model and the
obtain the same impedance as in the microstrip line. The permittivity in the SIW, the S-parameters, at the normalized
impedance of the waveguide shown in Fig. 2b) is given by frequency, will be unchanged. With these observations, we see
that the scattering parameters, in the normalized frequency
(2) band, are only dependant of the ratios a/we and eeler.
We are interested in finding the optimal width that will
Combining with the analytical equation for the impedance minimize the return loss over the full waveguide bandwidth.

{
of a microstrip line [11], we obtain: For substrates with a permittivity between 1 and 20, and
conventional microstrip structures, we have 0.5 < eeler < 1.
!!:.. =
�ln(8� +0.25�) Several microstrip-to-SIW steps, using the model in Fig. 2d),
W
J
= Jl Fe h
Ze . (3) have been optimized to find the optimum a/we for a given
coce We 120rr
Fe[w/h+l.393+0.6671n (w/h+1.444)] eeler ratio. The results for these optimum values are shown in
Fig. 3. Curve fitting techniques have been used to find the
The first equation is used when wlh < 1 and the second, relation between permittivity and width ratios, and we found:
when wlh > 1. The model for the step between the microstrip
or
ae =
and the SIW is presented in Fig. 2d). Of course, this model is
We
4.38e -O.627e;. (5)
not perfect. The capacitive effects at the end of the SIW in the
transition plane are not taken into account, because magnetic It is generally possible to obtain a return loss lower than -20
walls are used to close the SIW. Also the field distribution in dB over the full waveguide bandwidth, as shown in Fig. 4.
the microstrip model does not perfectly match the real one. The curves in Fig. 4 are the return loss results for the full­
However, this model is definitely good enough to accurately wave simulations for the dimensions shown by the markers in
predict the amplitude of the scattering parameters. An Fig. 3. We this in mind, we can now write the final design
experimental validation of the model was presented in [10]. equations. Rewriting (3) and combining (1) and (5) we obtain:

Authorized licensed use limited to: ULAKBIM UASL - ANKARA UNIVERSITESI. Downloaded on February 16,2024 at 16:53:50 UTC from IEEE Xplore. Restrictions apply.
978-1-4244-7732-6/101$26.00 ©2010 IEEE 705 IMS 2010
 o

B
- 10

�
iD iD

�
B -10
-20

� -30 � -20
<{ <{

-30

-�· �
8 --�19�� 2�
0 � 2�1--�22�� 2�
3 �2L
4--�25--�26� 50 55 60 65 70 75
Frequency (dB) Frequency (dB)

{
Fig. 5. Simulation results for the first design example. Fig. 6. Simulation results for the second design example.

60 A. First Design Example

1 _ 1Jh
in (8.!:w + 0.25�)
h
- ' (6a)
we 120rr The specifications for the first design example are:
1Jh[w/h+1.393+0.667In (w/h+1.444)) • Frequency band : 18 to 26.5 GHz
-0.627 E +1 ET �T 1
• Substrate : Alumina (cr = 9.9, h = 0.254 mrn)
1 4.38 T2 + 2 ,/1+12h/W The diameter of the post is 0.254 mrn and the pitch between
-=-e (6b)
we ,
ae posts is 0.5 mrn. The distance between the two rows of posts is
where 1] = (f..lrleo/f2. For a given substrate (h and er) and equal to 3.55 mrn. The equivalent width of the SIW is found
SIW width (ae), we can equate (6a) and (6b) and solve it to to be: ae = 3.39 mrn. Solving (6) we have w = 1.44 mrn. The
find w, which is the optimum taper width. taper length required to match this width to a 50 n microstrip
line is equal to 5.5 mrn, which represented three quarters of a
B. Microstrip Taper wavelength. The design is now completed and the frequency
The microstrip taper is used to adapt the optimum width response is verified with a full-wave simulation using Ansoft
found in the previous section, w, to the input impedance of the HFSS. The results are presented in Fig. 5. The return loss is
microstrip line, wo, as shown in Fig. 2c). A large difference better than 20 dB over the full bandwidth.
between these two widths will require a long taper. In the B. Second Design Example
millimeter frequency range and for a substrate with a
permittivity comprised between 2 and 10, the widths wand Wo The specifications for the second design example are:
are usually close and a quarter wavelength taper is sufficient • Frequency band : 50 to 75 GHz
to obtain a good return loss. In any case, taper lengths must be • Substrate : Liquide Crystal Polymer (cr = 3.15, h =
chosen as a multiple of a quarter of a wavelength in order to 150/-lm)
minimize the return loss. The transmission parameters of a The post diameter is 200 /-lm and the pitch between posts is
linear tapered TEM transmission line are already known 400 /-lm. The distance between the two rows of posts is
analytically [12]. These equations are used to verify the return selected as 2.24 mrn. The equivalent width of the SIW is then
loss of the taper over the full bandwidth. equal to 2.12 mrn. Solving (6) for the optimum microstrip
width, we find w = 770 /-lm. The taper length required to
match the output to a microstrip line of width equal to 370/-lm
III. DESIGN EXAMPLE is found to be 1.57 mrn. The return loss in this case is below -
In order to validate the proposed design techniques, three 25 dB for the taper. The full-wave simulation results for the
transitions were designed in different frequency bands using complete transition are presented in Fig. 6. Return loss better
several substrates. The design steps used to obtain the than 20 dB is again achieved in the complete bandwidth.
microstrip-to-SIW transitions are as follow: C. Third Design Example
1. Compute the equivalent width of the SIW (ae).
This width is computed using the technique The specifications for the third design example are:
presented in [2]. • Frequency Band : 24 to 38 GHz
2. Compute the width of the microstrip taper (w). • Substrate : Duroid (cr = 2.2, h = 0.508 mrn)
Equation (6) is solved for w. The dimensions related to the SIW are: d = 0.77 mrn,
3. Compute the taper length (I). The analytical p = 1.52 mrn and ar = 5.57 mm. The equivalent width of the
equations presented in [12] are applied to find the SIW is equal to: ae = 5.08 mrn. Solving (6) we find w = 1.55
length which minimizes the return loss over the full mm. The taper length required to match this width to a
bandwidth. microstrip line of width equal to 0.76 mrn is 1.57 mrn.
The performances of the transition are finally evaluated Excellent results are also obtained for this transition, as shown
using full-wave simulations. in Dig. 7.

Authorized licensed use limited to: ULAKBIM UASL - ANKARA UNIVERSITESI. Downloaded on February 16,2024 at 16:53:50 UTC from IEEE Xplore. Restrictions apply.
978-1-4244-7732-6/101$26.00 ©2010 IEEE 706 IMS 2010
 -10 -�--�-�--�-
5 r----.-----.---,--,--� 1 ---O;:====::::;""]
-- Simulated
-15 -- Measured

co -5 -20
:E-
" -10 co
-g � -25
---- -- --
% - 15
E -30
<{ -20
-35
-25
-30 -40 "-----'--'---'
24 26 28 30 32 34 36 38 24 26 28 30 32 34 36 38
Frequency (dB) Frequency (GHz)
Fig. 7. Simulation results for the third design example.
-- Simulated
-0.2 -- Measured

IV. EXPERIMENTAL VALIDATION co -0.4

:E-

The third design example presented in the last section has 5i -0.6

been fabricated and measured. The measured structure -0.8

involves two transitions separated with a 9.9 mrn section of
SIW. The simulated and measured results of the complete
Frequency (GHz)
structure are presented in Fig. 8. Two back-to-back transitions
Fig. 8. Simulated and measured resulted for the manufactured prototype.
give a global return loss superior to 18 dB over the whole
bandwidth and a global insertion loss lower than 0.45 dB. plates," IEEE Trans. Microwave Theory & Tech., vol. 46, no. 5,
There is a good agreement between the full-wave simulation pp. 625-630,May 1998.
and the measured results. [2] D. Deslandes and K. Wu, "Accurate modeling, wave
mechanism, and design consideration of a substrate integrated
waveguide," IEEE Trans. Microwave Theory & Tech., vol. 54,
VII. DISCUSSION no. 6,pp. 2516-2526,Jun. 2006.
[3] D. Deslandes and K.Wu, "Integrated microstrip and rectangular
The proposed technique allows to design microstrip-to-SIW waveguide in planar form," IEEE Microwave Wireless Compon.
transitions without the need for any full-wave simulations. Lett., vol. II,no. 2,pp. 68-70, Feb. 2001.

Analytical equations, derived using curve fitting techniques, [4] N. Jain and N. Kinayman, "A novel microstrip mode to
waveguide mode transformer and its applications," IEEE MTT-S
are used to evaluate the optimum width at the output of the
Int. Microwave Symp. Dig., vol. 2,2001,pp. 623-626.
taper. The taper length, which should be a multiple of quarter­ [5] T. H. Yang, C. F. Chen, T. Y. Huang, C. L. Wang, and R. B.
wavelength, is selected using the analytical equation for linear Wu, "A 60GHz LTCC transition between microstrip line and
tapered transmission lines. This design does not take into substrate integrated waveguide," Proc. APMC, vol. I, pp. 4-7,

account the parasitic reactance at the end of the SIW or does it Dec. 2005.
[6] M. Abdolhamidi, A. Enayati, M. Shahabadi and R. Faraji-Dana,
benefit from the cancellations that could occur due to multiple
"Wideband single-layer DC-decoupled Substrate Integrated
reflections. Nevertheless, it guaranty very good performances Waveguide (SIW)-to-microstrip transition using an interdigital
over the full SIW bandwidth, without any tuning or configuration," Asia-Pacific Microwave Conference, Dec. 2007.
optimization. Some applications may require better matching [7] c.-K. Yau, T.-Y. Huang, T.-M. Shen, H.-Y. Chien and R.-B.

in a narrow band. In these cases, the proposed techniques can Wu, "Design of 30GHz transition between microstrip line and
substrate integrated waveguide," Asia-Pacific Microwave
very well be used to find a starting point that can further be
Conference, Dec. 2007.
optimized. In this way, the optimization process will converge [8] D. Deslandes and K. Wu, "Integrated transition of coplanar to
easily as the starting point will be close to the optimum value. rectangular waveguides," IEEE MTT-S Int. Microwave Symp.
Dig., May 2001,pp. 619-622.
[9] D. Deslandes and K. Wu, "Analysis and design of current probe
ACKNOWLEDGEMENT transition from grounded coplanar to substrate integrated
rectangular waveguides," IEEE Trans. Microwave Theory &
The authors wish to acknowledge the financial support of Tech., vol. 53,pp. 2487-2494,Aug. 2005.
the Natural Sciences and Engineering Research Council of [10] G. Kompa, "About the frequency-dependent characteristics of a
Canada (NSERC). microstrip-waveguide transiton," AEV, vol 35,1981,pp. 69-71.
[11] D. M. Pozar, Microwave Engineering, 2nd Ed., Toronto: John
Wiley & Sons,1998,pp. 144-145.
REFERENCES [12] K. Lu, "An efficient method for analysis of arbitary nonuniform
transmission lines," IEEE Trans. Microwave Theory & Tech.,
[I] J. Hirokawa and M. Ando, "Single-layer feed waveguide vol. 45,pp. 9-14,Jan. 1997.
consisting of posts for plane TEM wave excitation in parallel

Authorized licensed use limited to: ULAKBIM UASL - ANKARA UNIVERSITESI. Downloaded on February 16,2024 at 16:53:50 UTC from IEEE Xplore. Restrictions apply.
978-1-4244-7732-6/101$26.00 ©2010 IEEE 707 IMS 2010