Annotated-0417062215 EEE6403 Assignment4
Annotated-0417062215 EEE6403 Assignment4
Annotated-0417062215 EEE6403 Assignment4
Assignment-4
Problem
It is instructive to calculate the current in a 1-D nanosystem using Landauer’s expression for
ballistic current.
To do this, consider an asymmetrical rectangular barrier and imagine this to represent a 1-D
transistor, with Region 1 (U1) being the source, Region 2 (U2) being the channel, and Region 3
(U3) being the drain. For a particular example, take the energies in eV to be 0, 0.1, and -0.5 for U1,
U2, and U3, respectively. Take the effective masses as m1∗ = m3∗ = 0.3m0 and m2∗ = 0.1m0.
Make the channel 10 nm long and solve for the transmission probability T(E) for energies up
to about 10kBT above U1.
(c) Integrate the spectral current density J(E) to find the total current.
Submitted by:
G E i H L R
1
Where E is the electron kinetic energy, H is the Hamiltonian operator and represents self-energy.
Fig: A device driven out of equilibrium by two contacts with different Fermi levels μ1 and μ2
and self-consistent procedure for determining the density matrix
2
Here, t and V V (n)
2ma 2
Now,
2 t U E 2t U E 4t 2
2
g
2t 2
t 2 g
From Landauer’s expression for ballistic current, we can get the spectral current density, given by [2]:
2q
J (E) T ( E ) f S ( E ) f D ( E )
h
Here f S ( E ) and f D ( E ) are the Fermi distribution functions for source and drain respectively.
J(E) can be integrated to determine the total current, J J ( E )dE
E
In case of 1-D system, there is no distinction between current and current density and both have a unit of
Ampere (A) [2].
U1
U3
Let us assume an electron with energy E ( U1 E U 2 ) is moving from left to right. We have to find
the transmission probability for the barrier U 2 .
The Schrodinger Equation for all 3 regions are:
2
d 1 d
U E 0
2 dx m* dx
The boundary condition at the interfaces are:
i) must be continuous
1 d
ii) must be continuous.
m* dx
1 x Ae ik x Be ik x ; x 0
1 1
2 x Ce k x De k x ; 0 x d
2 2
3 x Ee ik x 3
; xd
Where A-E are coefficients and the wavenumbers are-
2m1* (E U1 )
k1
2m2* (E U 2 )
k2 ik2
2m2* (U 2 E)
k2
2m3* (E U 3 )
k3
At x=0:
1 x 2 x
A B C D ………(1)
1 d 1 ( x ) 1 d 2 ( x )
*
*
m1 dx m2 dx
ik1 k
*
( A B ) 2* (C D)
m1 m1
k2 m1*
( A B) (C D) ……..(2)
ik1m1*
At x=d:
2 x 3 x
ik3m2*
(Ce ik2 d De ik2 d ) Ee ik3d ……..(4)
k2 m3
*
Now (3)+(4)
ik m *
2Ce ik2 d E 1 3 *2 e ik3d
k2 m3
Now (3)-(4)
ik m *
2 De ik2 d E 1 3 *2 e ik3d
k2 m3
E ik3d k2 d ik m * ik k d
A B e e e k2 d 3 *2 e k2 d e k2 d e 3 2 …..(7)
2 k2 m3
k m * k m* k m*
2 A Ee ik3d 1 3 1* cosh(k2d ) i 2 1* 3 2* sinh(k2d )
k1m3 k1m1 k2 m3
1
E
2 k m * 2 k2 m1* k3m2*
2
4 1 3 1
cosh 2
( k d ) sinh 2
( k d )
A k1m3
* 2
1 1
k m *
k m *
2 3
2
RESULTS
I_total = I_total_theory =
1.8706e-08 A (18.706 nA) 1.8730e-08 A (18.703 nA)
I_total = I_total_theory =
2.666744090501101e-08 A (26.67 nA) 2.669118419888329e-08 A (26.69 nA)
MATLAB CODE
clear all
close all
clc
q=1.6e-19; h=6.63e-34;
hcut= h/2/pi; kB = 1.38e-23; T = 300;
kbt= (kB*T)/q; %in eV
m0=9.11e-31;
m1=0.1; m2=0.3; m3=0.1;
m1=m1*m0; m2=m2*m0; m3=m3*m0;
U1=0; U2=.1; U3=-0.5;
delx=1.010101010101003e-10;
x= [x1 x2 x3];
t1 = hcut^2/2/m1/delx^2/q;
t2 = hcut^2/2/m2/delx^2/q;
t3 = hcut^2/2/m3/delx^2/q;
U=zeros(1,N);
for idx=1:length(x)
reg2= ismember(x(idx),x2);
reg3= ismember(x(idx),x3);
if (reg2)
U(idx)=U2;
elseif (reg3)
U(idx)=U3;
end
end
figure(1)
plot(x,U); %potential profile
xlabel('Position (m)')
ylabel('Energy (eV)')
title('1D Potential Barrier')
Ham1=zeros(N+2,N+2);
for i=2:N+1
Ham1(i,i)=2;
Ham1(i,i+1)=-1;
Ham1(i,i-1)=-1;
end
Ham2= Ham1(:, 2:N+1);
Ham= Ham2(2:N+1,:);
EL=2*t1+U1-En_(ii);
gL=(EL+sqrt(EL^2-4*(t1^2)))/(2)/(-t1^2);
sigmaL(1,1)=(-t1^2)*gL;
gammaL = 1i*(sigmaL-sigmaL');
ER=2*t3+U3-En_(ii);
gR=(ER+sqrt(ER^2-4*(t3^2)))/(2)/(-t3^2);
sigmaR(N,N)=(-t3^2)*gR;
gammaR = 1i*(sigmaR-sigmaR');
EI = (En_(ii)-1i*10e-20)*eye(N);
G_ = inv(EI-H_+sigmaL+sigmaR); %Green Function
TE(ii) = real(trace(gammaL*G_*gammaR*G_'));
k1=(1/hcut)*sqrt(2*m1*q*(En_(ii)-U1));
K2(ii)=(1/hcut)*sqrt(2*m2*q*(En_(ii)-U2));
K2_(ii)=(1/hcut)*sqrt(2*m2*q*(U2-En_(ii)));
k3=(1/hcut)*sqrt(2*m3*q*(En_(ii)-U3));
denum=(1+(m1*k3/m3/k1))^2*(cos(k2*d2))^2+((k2/k1)+(k3/k2))^2*(sin(k2*d2))^2;
TT(ii)=real(num/denum);
end
figure(3)
plot(En_,I_density, 'b')
hold on
plot(En_,I_density_theory, 'r')
xlabel('Energy (eV)')
ylabel('Spectral Current Density J(E)')
title('Spectral Current Density vs Energy')
hold off
REFERENCE
[1] I. Appelbaum, T Wang, J.D. Joannopoulos and V. Narayanamurti, “Ballistic hot-electron transport in nanoscale
semiconductor heterostructures: Exact self-energy of a three-dimensional periodic tight-binding Hamiltonian”, Phys.
Rev. B, 69, 16, 165301, 2004. DOI: 10.1103/PhysRevB.69.165301
[2] D.L. Pulfrey, “Understanding modern transistors and diodes”, Cambridge University Press, New York NY, 2010.
[3] G. A. Ibitola and O. Ajanaku, “Quantum Mechanical Potential Step Functions, Barriers, Wells and the Tunneling
Effect”, World Journal of Applied Physics, 1, 2, 59-66, 2016. DOI: 10.11648/j.wjap.20160102.15