NSR05F40QNXT5G

Schottky Diode Optimized

for High Frequency
Switching Power Supplies
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale www.onsemi.com
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher 40 V SCHOTTKY
efficiency and meeting reduced space requirements.
BARRIER DIODE
Features
• Low Forward Voltage Drop − 420 mV @ 500 mA
• Low Reverse Current − 15 mA @ 10 V VR 1 2
• 500 mA of Continuous Forward Current CATHODE ANODE

• ESD Rating − Human Body Model: Class 3B

ESD Rating − Machine Model: Class C
• High Switching Speed 2
• Equivalent Processing and Electrical Performance as DSN2
(0402)
NSR05F40NXT5G CASE 152AC
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting MARKING DIAGRAMS
PIN 1
• Camera Photo Flash
• Buck and Boost dc−dc Converters 05F40
YYY
• Reverse Voltage and Current Protection
• Clamping and Protection 05F40 = Specific Device Code
Markets YYY = Year Code
• Mobile Handsets PIN 1
• MP3 Players
• Digital Camera and Camcorders ACM

• Notebook PCs & PDAs

• GPS AC = Specific Device Code
M = Date Code
MAXIMUM RATINGS
Rating Symbol Value Unit
ORDERING INFORMATION
Reverse Voltage VR 40 V
Device Package Shipping†
Forward Current (DC) IF 500 mA
NSR05F40QNXT5G DSN2 5000 / Tape &
Forward Surge Current IFSM A
(Pb−Free) Reel
(60 Hz @ 1 cycle) 10
†For information on tape and reel specifications,
Repetitive Peak Forward Current IFRM 4.0 A
including part orientation and tape sizes, please
(Pulse Wave = 1 sec, Duty Cycle = 66%)
refer to our Tape and Reel Packaging Specifications
ESD Rating: Human Body Model ESD >8 kV Brochure, BRD8011/D.
Machine Model > 400 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

May, 2017 − Rev. 2 NSR05F40Q/D
 NSR05F40QNXT5G

THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1) RqJA 240 °C/W
Total Power Dissipation @ TA = 25°C PD 521 mW
Thermal Resistance
Junction−to−Ambient (Note 2) RqJA 94 °C/W
Total Power Dissipation @ TA = 25°C PD 1.3 W
Storage Temperature Range Tstg −40 to +125 °C
Junction Temperature TJ +150 °C
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Reverse Leakage IR mA
(VR = 10 V) 15
(VR = 40 V) 75
Forward Voltage VF V
(IF = 100 mA) 0.340 0.360
(IF = 500 mA) 0.420 0.460

VAK
VF @ IF

−VOUT

TON TOFF

TF

TS

Figure 1. Voltage Waveform of Schottky Diode in Boost Application

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 NSR05F40QNXT5G

TYPICAL CHARACTERISTICS

1 100000
150°C
10000
IF, FORWARD CURRENT (A)

Ir, REVERSE CURRENT (mA)

1000 125°C
150°C
0.1
100 75°C

10
25°C
125°C 75°C 25°C −25°C 1
0.01
0.1 −25°C

0.01

0.001 0.001
0 0.10 0.20 0.30 0.40 0.50 0.60 0 5 10 15 20 25 30 35 40
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage Figure 3. Leakage Current

120
TA = 25°C
CT, TOTAL CAPACITANCE (pF)

100

80

60

40

20

0
0 5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
1000
PCB Cu Area: 300 mm2, 1 oz

100 50% Duty Cycle

20%
10%
10
R(t) (°C/W)

5%
2%
1

0.1 Single Pulse

0.01
1E−08 1E−07 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
PULSE TIME (sec)
Figure 5. Thermal Resistance

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 NSR05F40QNXT5G

APPLICATION SECTION

Introduction ripple. Lower value capacitors can be used because they

As wireless devices become smaller and thinner more become re−charged more frequently.
compact, energy efficient, solutions are necessary. To Unfortunately the transistor and the diode still need to
reduce the solution size many people will integrate various carry the same average and peak currents. The LEDs for a
discrete devices into the IC. While this may physically backlight are generally set between 20 – 150 mA. This
reduce the part count this has some adverse side effects, such means that the transistor and diode need to conduct up to and
as performance degradation. The best way to improve the above 1 A of current. If every element shrinks with
solution is to use optimized discrete devices that have been exception to the diode and FET then all of this effort is for
shrunk and electrically optimized. In this paper we will nothing. ON Semiconductor’s High Frequency optimized
discuss the intricacies of choosing an optimized schottky schottky diodes solve this problem.
diode for wireless devices.
First a discussion of high frequency boost converters as an Using ON Semiconductor’s Optimized Schottky
application is explored. Then various trends in space saving Diodes
and energy saving design will be discussed. Finally a stress To continue to reduce space requirements for a
test and a bench tests are shown. non−integrated, inductive boost circuit, a diode and a
transistor with low power dissipation during operation in a
Background – Application package with high thermal conductivity is necessary. With
Most mobile phones use white LEDs to backlight the LCD the compact nature of wireless applications the space is very
display. These white LEDs typically have a forward voltage constrained and there is no place for a large heat sink (so a
near 3.6 V. Since the typical power source in a mobile phone thermally efficient package is required).
is a single−cell Li−Ion battery that has an input voltage range Typically for a 1 A diode with a RqJA = 86°C/W a SMA
of 2.7 V to 4.2 V. Since more than one LED is required to package is used. The SMA package is 5.21 mm x 2.60 mm
backlight a LCD panel either a single string (~up to 10 LEDs x 2.10 mm (L x W x H). ON Semiconductor’s new
in series) or multiple strings of LEDs (~ up to 10 LEDs in optimized Schottky diode line these packages have a RqJA
series) in parallel are used. = 85 C/W and are only 1.4 mm x 0.6 mm x 0.27 mm (L x W
An example of a single string inductive boost circuit is x H). This means that the same power can be dissipated in
shown in Figure 6. Typically, a very small voltage is only 8% of the total space. Not only is there is a thermal
measured over a precision resistor in series with the LEDs conductivity density advantage but there is also a
to feedback the output operation condition to the controller. performance improvement with these new optimized
Many of today’s controllers integrate the transistors and the Schottky diodes.
diode to save space.
Thermal Stress Testing Bench Results
Before being tested a set of NSR05F40QNXT5G Boost
Optimized Schottky diodes were characterized for forward
voltage and reverse current over temperature. Next these
diodes were placed in a “1 MHz” Boost converter, operating
at near 750 kHz.
To augment the electrical stress seen on the
ON Semiconductor Schottky Diodes an inductive boost
regulator was set up with the following criteria: Input
Voltage = 2.3 V, Output Voltage = 32 V, Output Load Current
Figure 6. Simplified Typical Single Channel = 150 mA, L1 = 10 mH. This will cause higher than normal
Converter
currents to conduct through the diode.
To further augment the stress seen by the Schottky diode
Space Saving Ideas a thermal component to the test was added when the
The real issue with integrating all of the devices into the Schottky diodes were mounted to external PCBs with only
controller is that these power devices have an increased a minimum footprint pad size. Twisted, shielded pair cable
junction temperature compared to the controller. This with an inductance of less then 0.125 mH attached the diode
increased junction temperature can lead to reliability issues PCBs to the “1 MHz” Boost board. This additional
due to the limited thermal conductivity of I.C. packages. inductance is modeled in Figure 7 as Lapra1 and Lpara2 and
Another method for shrinking the size of an inductive seen as ringing. These cables allowed for the diode to run
boost application is to increase the switching frequency. inside of an oven set to 85°C for 48 Hours.
When the switching frequency is increased a lower value After the 48−hour test was completed the diodes were
inductors can be used to keep a constant inductor current taken back to the characterization lab for a post condition

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 NSR05F40QNXT5G

analysis. This analysis showed that there was no shift in any The graphs below shown below demonstrate the Pre and
of the parameters, forward voltage, reverse leakage current, Post−Stress characterization graphs and how that there was
and capacitance. no change in the part performance.

1.2 1E−01

FORWARD CURRENT (A)

REVERSE CURRENT (A)

1E−03
85°C 85°C
0.8
1E−05
25°C
0.6 25°C
1E−07
0.4
−30°C
1E−09
0.2 −30°C

0 1E−11
0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50
REVERSE VOLTAGE (V) FORWARD VOLTAGE (V)
Figure 7. Reverse Leakage Characteristics Figure 8. Forward Current Characterization

To further evaluate the performance, a thermal camera

was used to take pictures of the NSR05F40QNXT5G during
Finally these diodes were placed in the same circuit at 25C heavy load operation and 25°C. As seen in Figure 11 the case
for 1 week of continuous operation. The screen shots below only got to 29.2°C. This translates to less than 20 mW of
in Figures 9 and 10 show the operation on the first day of total power dissipation.
continuous operation and 5 days respectively.

Figure 9. NSR05F40QNXT5G on Day 1 at 255C

Figure 11. Case Temperature of NSR05F40NXT5G in

Operation at 255C, 150 mA 34 V Output

With a heavy load condition (up to 1.2 A) through the

NSR05F40QNXT5G on a minimum pad size the ambient
temperature can rise up to 145°C and not degrade the
performance. Using ON Semiconductor’s new ultra low
profile Wireless Boost Application Optimized Schottky
diodes will increase the overall efficiency and battery life
while reducing board size and cost associated with thermal
Figure 10. NSR05F40QNXT5G on Day 5 at 255C pads.

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 NSR05F40QNXT5G

PACKAGE DIMENSIONS

DSN2, 1.0x0.6, 0.575P, (0402)

CASE 152AC
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.05 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D A B
MILLIMETERS
DIM MIN MAX
A 0.25 0.31
E A1 −−− 0.05
0.05 C b 0.45 0.55
D 1.00 BSC
TOP VIEW E 0.60 BSC
L 0.85 0.95
L2 0.35 0.45
0.05 C L3 0.20 0.30
A
0.05 C
CATHODE BAND MONTH
A1 SEATING
CODING
C PLANE NOV OCT
SIDE VIEW DEC

SEP

L
0.05 C A B
JUN
XXXX DEVICE CODE

L/2
b
MAR YYY YEAR CODE
FEB
1 JAN
0.05 C A B

L3
L2
RECOMMENDED XXXX (EXAMPLE)
BOTTOM VIEW SOLDER FOOTPRINT* Y09
1.20
0.47 INDICATES AUG 2009

PIN 1

0.60
0.60
DIMENSIONS: MILLIMETERS

See Application Note AND8464/D for more mounting details

*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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