BC368 (NPN), BC369 (PNP)

Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
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• Pb−Free Packages are Available*
COLLECTOR COLLECTOR
2 2

3 3
BASE BASE
MAXIMUM RATINGS NPN PNP
Rating Symbol Value Unit 1 1
EMITTER EMITTER
Collector −Emitter Voltage VCEO 20 Vdc
Collector −Emitter Voltage VCES 25 Vdc
Emitter −Base Voltage VEBO 5.0 Vdc MARKING
DIAGRAM
Collector Current − Continuous IC 1.0 Adc
Total Device Dissipation PD 625 mW CASE 29 BC
@ TA = 25°C TO−92 36x
Derate above 25°C 5.0 mW/°C STYLE 14 YWW
Total Device Dissipation PD 1.5 Watt 1
2
@ TC = 25°C 3
Derate above 25°C 12 mW/°C
BC36x = Specific Device Code
Operating and Storage Junction TJ, Tstg −55 to °C
x = 8 or 9
Temperature Range +150
Y = Year
Maximum ratings are those values beyond which device damage can occur. WW = Work Week
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Device Package Shipping†
Characteristic Symbol Max Unit
BC368 TO−92 5000 Units/Box
Thermal Resistance, RJA 200 °C/W
Junction−to−Ambient BC368ZL1 TO−92 2000/Ammo Pack
Thermal Resistance, RJC 83.3 °C/W BC368ZL1G TO−92 2000/Ammo Pack
Junction−to−Case (Pb−Free)
BC369 TO−92 5000 Units/Box
BC369ZL1 TO−92 2000/Ammo Pack
BC369ZL1G TO−92 2000/Ammo Pack
(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

May, 2004 − Rev. 4 BC368/D
 BC368 (NPN), BC369 (PNP)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO 20 − − Vdc
(IC = 10 mA, IB = 0)
Collector −Base Breakdown Voltage V(BR)CBO 25 − − Vdc
(IC = 100
A, IE = 0 )
Emitter −Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc
(IE = 100
A, IC = 0)
Collector Cutoff Current ICBO
(VCB = 25 V, IE = 0) − − 10
Adc
(VCB = 25 V, IE = 0, TJ = 150°C) − − 1.0 mAdc
Emitter Cutoff Current IEBO − − 10
Adc
(VEB = 5.0 V, IC = 0)

ON CHARACTERISTICS
DC Current Gain hFE −
(VCE = 10 V, IC = 5.0 mA) 50 − −
(VCE = 1.0 V, IC = 0.5 A) BC368, 369 85 − 375
BC368−25 170 − 375
(VCE = 1.0 V, IC = 1.0 A) 60 − −
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) fT 65 − − MHz
Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) − − 0.5 V
Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) − − 1.0 V

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2
 BC368 (NPN), BC369 (PNP)

200 1.0
TJ = 25°C

VCE , COLLECTOR VOLTAGE (VOLTS)

0.8
100
hFE, CURRENT GAIN

0.6
70 50 mA

50 0.4 100 mA
VCE = 1.0 V
TJ = 25°C 1000 mA
0.2 500 mA

IC = 10 mA
250 mA
20 0
10 20 50 100 200 500 1000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

1.0 −0.8

θ VB , TEMPERATURE COEFFICIENT (mV/ °C)

TJ = 25°C VBE(sat) @ IC/IB = 10

0.8 −1.2
VBE(on) @ VCE = 1.0 V
V, VOLTAGE (VOLTS)

0.6 −1.6

0.4 −2.0 VB for VBE

0.2 −2.4
VCE(sat) @ IC/IB = 10

0 −2.8
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages Figure 4. Temperature Coefficient

f T, CURRENT−GAIN
BANDWIDTH PRODUCT (MHz)

300 160
TJ = 25°C
200
120
C, CAPACITANCE (pF)

100 80

70 Cibo

VCE = 10 V 40
50 TJ = 25°C
f = 20 MHz
Cobo
30 0
10 20 50 100 200 500 1000 Cobo 5.0 10 15 20 25
Cibo 1.0 2.0 3.0 4.0 5.0
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Current−Gain — Bandwidth Product Figure 6. Capacitance

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3
 BC368 (NPN), BC369 (PNP)

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AL

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L INCHES MILLIMETERS
SEATING DIM MIN MAX MIN MAX
PLANE K A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
X X D H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
H J L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
V C P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
SECTION X−X V 0.135 −−− 3.43 −−−
1 N
STYLE 14:
N PIN 1. EMITTER
2. COLLECTOR
3. BASE

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