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Assignment1

This document contains solutions to 4 assignment problems: 1) Calculating minority carrier concentration in a doped semiconductor. 2) Finding conductivity and resistance of a semiconductor bar using given parameters. 3) Calculating forward current through a diode with a given saturation current and forward voltage. 4) Calculating the temperature rise for a PN junction diode with leakage current increased by a factor of 20.

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Mcfirebreath Swattik
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42 views5 pages

Assignment1

This document contains solutions to 4 assignment problems: 1) Calculating minority carrier concentration in a doped semiconductor. 2) Finding conductivity and resistance of a semiconductor bar using given parameters. 3) Calculating forward current through a diode with a given saturation current and forward voltage. 4) Calculating the temperature rise for a PN junction diode with leakage current increased by a factor of 20.

Uploaded by

Mcfirebreath Swattik
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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B.

EtC
Assigninent -1
a
Nane - Sntik
Roll Noi-- 232.&133
Sec tion'.-A18
Date. of submiseion ;-|4/o2/24
) AS sovngle. is doped with 'Soson' atomi to that hole
Cohdentratio meesu red as loe?, Fina th e mino,
Carrer Concent raion at 3ook? A3sune. intrinsh
corrier coneentoatton as l o m
Ans
Giiven,
Majogity carrier coneentration, pe10"/cm
Intrensie carrier concentraution, n1o*em
The minoity carrieo concentration can be
tound uiing the eqatiom Por.chatge neuttality
n a Semie,onduetor
n.pn

Henee the mi noity carrier concentntton


t

2-) Elect rons in some Semicondutor having l0em length


and I mn ar ea ot cross Setion have
bf 10Tcm with eleet on mobilit 860 cm/N,s,
Find the con ductity and reictance o- the.
gilicoh bar,

As:

& resistahce C2)=L


As

Chiven,

L: lbcm
A- Imm: 10-2am

S|,6*o4
Now +he. 6esistane e

1oeml.22*1olem
R|o9.07.810

and Ms reitonce is a.pprox 7.bL2


curent s O.ol p and
37 A diode ha? eveSe Setutatin
faetor nI.Ie 4he fort foowa.sd Vol+age
idelity
then finA +-he diode
ac tosS +he. diode. ig 0.9 v.
CANErnt.

Ans: For diode utrent I<Ioleus) ci)


+he revese

setu ation crrent , V i3 the fosunrt bict.

at room temperetuge
New thesmal vol tage
Ceppronimately, 3oo K) can bei

Substiuthg. ket, 38023 T/K

(t.6x|0-1c)

V 29.87S mU

NowI lt (7)
6-MA) x(ex29. 075

I (Ix t6"A) (eo.28875) -


Io-"A (2.46qxo" -)
24. 09 mA . So he. diede cuttet is appr
24.0tnA
aPpro 24.04mA
S. he. dioda cuerent i

4Caleulate the. rie. in te ipero -ure Po o. PN jhcHon


ticde. ahose leoleeage, c e n t i nereased
factoe o 20.

Ans: Let w assune, the diode,'1 power dizipotion is muy


due. to the. leakage curent and well will use the
+he.ra tesisteaMce. CRat of the diode. to relate
the. pOwer dieipatiey Ao the, tenperature tse.Bue
The. relationship i uen by
ATe Paiss}petien X Roth
to hete AT e hanqe in tempe atute
aisalpebn is the powet di2aipaton
B+h is the therma resistenee
caleulated uting
Now the change. in temp aon be
AT (eak, neIeak eld)x Rh
ày
Given that the. leaka ge ctoret hás inareas
1eakenge
teprelet the, ne
a lac. tor of 30 we co
cLrrent (Iieak ine as (301 leak ol
Hhe ehange n tempesatse i ,

he ehcnge in
AT
tempeoahse
(49(20 Jea. ld)RRT

he ahange mte,mperatoe 3 di retlg poopeehier


cemtre -tap Atd full ve reetifier shoLon in
In a
ot load cueet
Selve. t o i) ak, Avesege, DMS volue
)¬tAicieuey
i) Qipple faator
[0:1

240V
A

er I mE
240 0. 22mA": Peale, cuorent
1O00+So
currnt
-For Ave sage Loond
Iavga2x0.2?z 0.140mA
314

Iome l,4l mA

i)Ripple acto

E+tieiene
hao.12

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