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This paper presents the design of millimeter-wave devices and circuit blocks up to 104 GHz in 90nm CMOS technology. The paper discusses the increasing interest in millimeter-wave communication systems driven by trends in digital video markets, personal networking, automotive radar, and other high data rate applications. While CMOS is not initially well-suited for millimeter-wave applications compared to other technologies, it benefits from integration advantages and scaling according to Moore's Law. The paper describes a modeling methodology used to optimize device layout and push CMOS capability to higher frequencies. Measurement results are presented for various millimeter-wave devices and circuit blocks up to 104 GHz fabricated in a 90nm CMOS process.

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41 views23 pages

Survey Report

This paper presents the design of millimeter-wave devices and circuit blocks up to 104 GHz in 90nm CMOS technology. The paper discusses the increasing interest in millimeter-wave communication systems driven by trends in digital video markets, personal networking, automotive radar, and other high data rate applications. While CMOS is not initially well-suited for millimeter-wave applications compared to other technologies, it benefits from integration advantages and scaling according to Moore's Law. The paper describes a modeling methodology used to optimize device layout and push CMOS capability to higher frequencies. Measurement results are presented for various millimeter-wave devices and circuit blocks up to 104 GHz fabricated in a 90nm CMOS process.

Uploaded by

Chikkapriyanka
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Paper-1:

Title: A Millimetre-wave Receiver using a wideband low noise amplifier


Authors:
Rahul singh,(member,IEEE) received the B.tech degree in electronics engineering
from IIT (BHU) Varanasi,india in 2008.from 2011 to 2013,he was with the
professor development group,Samsung electronics,Gyeonggi-do,south korea
Susnata mondal, (student member,IEEE)received the B.tech and M.tech degrees
in electronics engineering from IIt karagpur,india IN 2015
Jaynandh Paramesh, (senior member,IEEE)received the B.tech degree in electrical
engineering from IIT madras,Chennai,india.he has held product development
and research positions at AKM semiconductor(Analog devices),motorala and
intel

Year of publication: Febraury 29,2020


Published by: Rahul sing from IEEE
Technology used: 65nm CMOS (Millimetre wave)
Keywords: 1)phased array transceivers 2)wideband receiver design 3)RLC
circuits 4)LNA 5)transformer layout

Technique: this article presents design techniques to facilitate the use of the
driving point impedance(Z11) of one port transformer coupled resonators as
wideband loads of mm wave amplifier stages for a 28ghz receiver front end.
while the use of z11 and z21 of twoport coupled resonator is considered to
achieve wideband response
-->phased array transceivers are required to overcome pathloss and realize
advanced multiple input,multiple output MIMO communication in emerging
5G networks in the 28-/38-GH bands.
Parameters: Receiver details

MEASUREMENT RESULTS AND COMPARISON WITH STATE-OF-THE-ART mm-WAVE LNAs


outputs:
References:
Advantages: design of a wideband receiver in 65nm cmos.A
compact,wideband,reconfigural LNA using the driving point impedance(z11) of
one-port transformer-coupled resonators.nested layout transformers are
simultaneously minimize area and flatten the z11 response
the effectiveness of the proposed technique is demonstrated through the
measurements of a 28-ghz quadrature receiver prototype and its constituent
LNA
Conclusion: This article describes the design of a wideband receiver in 65-nm CMOS. A compact,
wideband, reconfigurable LNA using the driving-point impedance (Z11) of one-port transformer-
coupled resonators is described. Design guidelines and insights are presented for the use of Z11 as a
wideband load. Nested-layout transformers are shown to simultaneously minimize area and flatten
the Z11 response. The effectiveness of the proposed techniques is demonstrated through the
measurements of a 28-GHz quadrature receiver prototype and its constituent LNA.

PAPER-2
TITLE: Analysis and design of transformer-based mm-wave transmitter/receiver
switches

Authors:
Ehsan adabi, mobile and wireless group,Broadcom corpation,Irvine,CA
92617,USA

Ali M.Niknejad, berkeley wireless research center(BWRC) and


EECS,University of California

Ashakn Borna
Publication: Hindirawi publishing corporation international journal of
microwave science and technology volume 2012 Article ID 302302

Technology: 90nm CMOS for MM wave technology


Technique: A prototype SPDT T/R switch has been fabricated in a 90nm Cmos
process.the die photo employing a transformer and designing on a lumped
component basis miniatured the structure and the active area of the switch is
only 60*60 micro m
Transmitt/receives switches implemented in standard Cmos technologies are
key mm-wave building blocks for demonstrating the ultimate goal of a mm-
wave single chip solution.
Keywords: 1)Antenna array reuse via T/R switching 2)transformer based switch
design 3)T/R switching configurations configurations
Parameters:

outputs:
References:
Advantages: better isolation is achievable in T/R switches.
these switches are reflective type of switches being used in TDD schemes

 One key advantage is due to small wavelengths, which allows antennas to


be realized on chip or on the package, further reducing the cost of a system.
Moreover, many antennas could be integrated with suitable phase shifters to
create phased array systems that effectively increase the aperture size and
directivity of transmit/receive antennas by a factor of N (number of antennas)

Disadvantges: Routing loss: Even after absorbing the capacitance of the


interfacing blocks and utilizing slow-wave techniques to reduce the
transmission line footprint, they are still bulky and devising a lumped
component counterpart for the shunt SPDT switch is highly valuable.

Conclusion: A miniature lumped-element switch topology employing only a


transformer and two shunt NMOS switches has been demonstrated. Shunt-only
transistors make it more suitable for mm-wave frequencies. Design equations
for the operating frequency, insertion loss, leakage, and isolation were derived
in terms of the transformer inductance and coupling factor as well as
transistors ON resistance and parasitic capacitances. A transformer-based
single pole, double throw (SPDT) shunt switch prototype was designed and
fabricated in 90 nm digital CMOS process. It has a minimum insertion loss of
3.4 dB at 50 GHz from the single pole to the ON-thru port and a leakage of 19
dB from the single pole to the OFFthru port. The isolation is 13.7 dB between
the two ports and the switch is capable of handling 14 dBm of power at its 1 dB
compression point. The fabricated chip has a small active area of 60 μm × 60
μm

PAPER-3:
TITLE: Radio frequency and millimetre wave circuit component
design with sige bicmos technology
Authors:
Dr. John D. Cressler, Advisor School of Electrical and Computer Engineering
Georgia Institute of Technology
Dr. Shaolan , Li School of Electrical and Computer Engineering Georgia Institute
of Technology
Dr. Farrokh Ayazi ,School of Electrical and Computer Engineering Georgia
Institute of Technology
Dr. Taiyun Ch,i Electrical and Computer Engineering Rice University
Dr. Hua Wang ,School of Electrical and Computer Engineering Georgia Institute
of Technology

Year of publication: December 2nd,2020


Published by: by yunyi gong Georgia institute of Technology
Technology: Sige BICMOS technology
Technique:
Parameters:

Outputs:
Advantages: Bicmos technologies,which have special
advantages for addressing applications in the submillimeter-
wave and THz range. The status of the technology process is
reviewed and the integration challenges are examined. A
detailed discussion on millimeter-wave characterization and
modeling is given with emphasis on harmonic distortion
analysis, power and noise figure measurements up to 190 GHz
and 325 GHz respectively and S-parameter measurements up
to 500 GHz.
References:
Coclusion:

PAPER-4
Title: Millimeter-wave devices and circuit blocks up
to 104 GHz in 90 NM CMOS

Authors:
Mounir Bohsali , (S’01) was born on March 21, 1980,
in Beirut, Lebanon. He received the B.S. degree in
computer engineering from North Carolina State
University, Raleigh, in 2001,His research interests
include the design of microwave CMOS power
amplifiers and modeling of microwave passive
structures.

Babak Heydari , (S’04) was born in Iran in May 1979. He


received the B.S. degree in electrical engineering with a
minor in chemistry from the Sharif University of
Technology, Tehran, Iran, in 2002. In 2003, he started
his graduate studies with the University of California at
Berkeley by first joining the BSIM Group, where he was
a part of the team who developed the new generation
of BSIM model, BSIM5 for nano-scale CMOS transistors.

Ali M. Niknejad , (S’93–M’00) received the B.S.E.E.


degree from the University of California, Los Angeles, in
1994, and the Master’s and Ph.D. degrees in electrical
engineering from the University of California, Berkeley,
in 1997 and 2000. During his graduate studies, he
authored ASITIC, a CAD tool that aids in the simulation
and design of passive circuit elements such as
inductors into silicon integrated circuits. ASITIC is
actively used by industry and academic research and
development centers.
Year of publication: January 2008
Published by: IEEE Journal of Solid-State Circuits ·
January 2008
Technology: 90nm CMOS technology
Technique used: THE last few years have witnessed an
increasing interest in millimeter-wave (mm-wave)
communication systems. Rising trends in digital video
markets and personal handheld multimedia devices, the
quest for a cheap viable solution to home and personal area
networking, automotive radar and other high data rate
applications are driving forces that draw attention toward
high bandwidth communication systems. These market
trends coincide with a universal regulatory facilitation,
freeing a large bandwidth around 60 GHz worldwide and
specifying the 77 GHz band for automotive radar applications.
While CMOS is not an obvious technology for mm-wave
applications in terms of raw performance, especially
compared to SiGe and III-V technologies, it has clear
advantages including low cost and potential for integration
with other parts of the system which makes it a natural
candidate for exploration. CMOS technology also benefits
directly from Moore’s Law, and the performance of CMOS is
improving at regular intervals, extending its functionality into
mm-wave frequencies. The for the 90 nm technology node is
above 100 GHz and it is continuing to increase for smaller
nodes, reaching an expected cut-off frequency of 280 GHz for
45nm process.
Parameters:

OUTPUTS:
Advantages: milli metre wave devices: At mm-
wave frequencies, the device layout has a significant
impact on performance. As a result, careful device design
becomes quite important in pushing the capability of CMOS
to higher frequencies. The layout dependency of the device
performance and the closeness to the activity boundary at
these frequencies makes the modeling task more crucial and
challenging. This section discusses the mm-wave device
modeling methodology pursued to optimize the device
physical structure.
References:
Conclusion: This paper presented a comprehensive
design methodology that allowed the successful utilization of
90 nm CMOS technology to operate up to 104 GHz. This
methodology includes a new recursive de-embedding and
modeling technique which provides accurate active and
passive models beyond 100 GHz. A systematic procedure was
used to improve the Fig. 21. Measured output spectrum of
the 104 GHz oscillator. Fig. 22. Simulated frequency pulling
versus gate bias for the 104 GHz. TABLE III SUMMARY OF THE
104 GHZ OSCILLATOR PERFORMANCE AND A COMPARISON
WITH PREVIOUS WORK performance of active device through
layout optimization resulting in a round-table device layout
with an extrapolated fmax of 300 GHz. These devices and
models were employed to demonstrate several key building
blocks including amplifiers and oscillators operating up to 104
GHz

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