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    Semicond Phys Question Bank

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    vatsalbbk2
    This document contains a question bank covering 5 modules related to semiconductor physics and materials. Module 1 covers classical and quantum free electron theory, energy bands, Brillouin zones, and band structure diagrams. Module 2 discusses intrinsic and extrinsic semiconductors, carrier generation and recombination processes, p-n junctions, and compound semiconductors. Module 3 is focused on optical properties including absorption, emission, recombination, gain, and photovoltaic effects. Module 4 includes resistivity measurement techniques like 4-point probe, Hall effect, and capacitance-voltage profiling. Module 5 covers low-dimensional systems, carbon nanotubes, thin film deposition methods, and characterization tools like SEM, TEM, and

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    Semicond Phys Question Bank

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    vatsalbbk2
    46 views6 pages
    This document contains a question bank covering 5 modules related to semiconductor physics and materials. Module 1 covers classical and quantum free electron theory, energy bands, Brillouin zones, and band structure diagrams. Module 2 discusses intrinsic and extrinsic semiconductors, carrier generation and recombination processes, p-n junctions, and compound semiconductors. Module 3 is focused on optical properties including absorption, emission, recombination, gain, and photovoltaic effects. Module 4 includes resistivity measurement techniques like 4-point probe, Hall effect, and capacitance-voltage profiling. Module 5 covers low-dimensional systems, carbon nanotubes, thin film deposition methods, and characterization tools like SEM, TEM, and

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    This document contains a question bank covering 5 modules related to semiconductor physics and materials. Module 1 covers classical and quantum free electron theory, energy bands, Brillouin zones, and band structure diagrams. Module 2 discusses intrinsic and extrinsic semiconductors, carrier generation and recombination processes, p-n junctions, and compound semiconductors. Module 3 is focused on optical properties including absorption, emission, recombination, gain, and photovoltaic effects. Module 4 includes resistivity measurement techniques like 4-point probe, Hall effect, and capacitance-voltage profiling. Module 5 covers low-dimensional systems, carbon nanotubes, thin film deposition methods, and characterization tools like SEM, TEM, and

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    46 views6 pages

    Semicond Phys Question Bank

    Uploaded by

    vatsalbbk2
    This document contains a question bank covering 5 modules related to semiconductor physics and materials. Module 1 covers classical and quantum free electron theory, energy bands, Brillouin zones, and band structure diagrams. Module 2 discusses intrinsic and extrinsic semiconductors, carrier generation and recombination processes, p-n junctions, and compound semiconductors. Module 3 is focused on optical properties including absorption, emission, recombination, gain, and photovoltaic effects. Module 4 includes resistivity measurement techniques like 4-point probe, Hall effect, and capacitance-voltage profiling. Module 5 covers low-dimensional systems, carbon nanotubes, thin film deposition methods, and characterization tools like SEM, TEM, and

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    © All Rights Reserved
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    of 6

    21PYB10BJ- Question Bank

    Module-I
    Part B

    1. What are the postulates of classical free electron theory?


    2. Write the success of classical free electron theory.
    3. Write any three failures of classical free electron theory.
    4. What are the postulates of quantum free electron theory?
    5. Write the success of quantum free electron theory.
    6. Write a short note on splitting energy band in solids.
    7. Explain three types of E-K diagram.
    8. What is meant by Brillouin Zone? Draw the diagram for Brillouin zone in 1D
    and 2D Lattice.
    9. Write any three differences between direct and indirect band gap
    semiconductor.
    10. Write a short note on Phonons.
    11. Explain probability of occupation in a given energy level using Fermi-Dirac
    distribution.
    12. Explain direct band gap and indirect band gap in materials with the help of E-K
    diagram.
    13. Write the classification of electronic materials on the basis of band theory.
    Part C

    1. Kronig-Penney Model
    2. Density of states
    Module-II Question Bank

    1. What is intrinsic semiconductor?


    2. Explain atomic structure and energy level diagram of intrinsic semiconductor?
    3. Where the Fermi energy level lies in intrinsic semiconductor. How does it vary
    with respect to temperature?
    4. What is extrinsic semiconductor?
    5. Explain N - type semiconductor with diagram
    6. Explain P - type semiconductor with diagram
    7. Where the Fermi energy level lies in P - type semiconductor. How does it vary
    with respect to temperature?
    8. Where the Fermi energy level lies in N - type semiconductor. How does it
    varies with respect to temperature.
    9. Describe the difference between P-type and N-type semiconductor materials?
    10. Explain about photon transitions
    11. Explain about SRH carrier generation and recombination.
    12. Explain Auger transitions.
    13. Explain the process of impact ionization.
    14. Discuss drift current and drive the equation for Jd (drift).
    15. Discuss about diffusion current and obtain the equation for Jd (diffusion).
    16. Derive the continuity equation for an electron with an infinitesimal slice
    thickness of dx in a one-dimensional system.
    17. Explain the concepts of built in potential in p-n junction under thermal
    equilibrium.
    18. Describe the change in potential under Forward bias condition in p-n junction.
    19. Describe the change in potential under Reverse bias condition in p-n junction.
    20. Discuss the VI characteristics of p-n junction diode under forward and reverse
    biasing.
    21. What is the work function of Schottky junction? Explain the same for before
    and after contact in metal- semiconductor (n-type) junction with diagram and
    analyse the VI characteristics of rectifying junction.
    22. What is a non-rectifying contact? Explain the electron transport phenomena
    from metal to semiconductor and vice versa with diagram.
    23. Explain about II-VI and III-V compound semiconductor with example and
    applications.
    24. Describe the photocurrent relation in a photodiode with diagram.
    25. Analyse the Light Emitting Diode; principle, construction, type, materials and
    wavelength of emission.
    26. Discuss active and passive components of Integrated Circuits.
    27. Describe components and working of OLED.
    28. Analyse types, applications, advantages and disadvantages of OLED.
    Module-III

    1. What do you mean by Band to band and impurity to band transition in semiconductors?
    2. Define optical absorption process in semiconductor with diagram.
    3. Define the types of optical emission process with diagram.
    4. What is Optical recombination process? Write three optical properties in which optical
    recombination process is observed.
    5. Using the relation N Q B = N A +N QB , derive the expression for ratio between
    1 12 2 21 2 21

    spontaneous and stimulated coefficient.


    6. What is optical joint density of states? Write the expression for finding optical joint
    density of states and state how it is relates with energy band gap of materials.
    7. What is Density of states for photons? Write the expression to find density of state for
    photons in-terms of energy and frequency.
    8. Define the concept of Fermi Golden rule. Write the equation to find transition rate per
    unit volume of a system.
    9. Discuss optical gain in semiconductor materials.
    10. What is photovoltaic effect? Draw the diagram to show p-n junction under illumination.
    11. Define the given terms used to find efficiency of solar cell: (i) Short circuit current, (ii)
    Open circuit voltage and (iii) Fill factor.
    12. Determine the Open-Circuit Voltage V of the solar cell, if Saturation Current (I ) =
    oc s

    0.75x10 A, Light Generated Current(I ) = 0.65 A, Ideality Factor (n) = 0.9, and
    -10 L

    Temperature (T) = 310K. (Answer: V = 0.55V)oc

    13. Determine the Conversion Efficiency of the solar cell, if Short-Circuit Current (I ) = sc

    3.5A, Open-Circuit Voltage (V )= 0.6V, Fill Factor (FF) = 0.7 and Input Power (P ) =
    oc in

    10W. (Answer: Conversion Efficiency =14.7%)


    14. Define any three losses which decrease the efficiency of solar cell.
    Module-IV
    1.Explain resistivity of a given material determined using two probe method.

    2.Mention any three advantages of Four Point Probe over two point probe method.

    3.Explain how the sample is connected to the probes in Four Point Probe method.

    4.Describe four point probe method collinear method: (i) Bulk resistance and (ii)
    Thin sheet resistance.

    5.State Hall Effect with diagram.

    6.Derive the expression for the Hall coefficient for n type semiconductor (or) p type
    semiconductor and relate Hall coefficient and Hall voltage.

    7.Measure the resistivity of the sample using van der Pauw method.

    8.Write experimental exposure of Hall Effect.

    9.Write any Four applications of Hall Effect.

    10.A silicon plate of thickness 1 mm, breath 10mm and length 10mm is placed in a
    magnetic field of 0.5 Wb/m2 acting perpendicular to its thickness. If 1x10-3A
    current flows along its length, calculate the Hall voltage developed if the Hall
    coefficient is 3.66x 10-4 m3/C.

    11.An n-type semiconductor has Hall coefficient = 4.16 x10-4 m3C-1. The
    conductivity is 108 ohm-1m-1. Calculate its charge carrier density and electron
    mobility at room temperature.

    12.Explain the working principle of hot point probe method.

    13.Explain the principle of capacitance-voltage measurement method.

    14. How does the capacitance of p-n junction diode vary in forward bias and reverse
    bias.

    15. Explain forward biasing and reverse biasing of p-n junction diode.

    16.Write a short note on I-V characteristics of p-n junction diode in reverse bias.

    Big question
    1.Four Point Probe

    2.Van der Pauw technique

    3.Hall measurement

    4.TCAD,

    5.Boltzmann transport equation for electron scattering

    Module-V
    1. What do you mean by Density of states?

    2. What are low dimensional systems?

    3. Brief the DOS in low dimensional systems?

    4. Compare the DOS in OD,1D and 2D systems.

    5. Discuss about quantum well, quantum wire and quantum dot.


    6. Write the special properties of CNT.
    7. Give any four Applications of CNT.
    8. Brief on the working of CVD
    9. Differentiate heterogenous and homogenous reactions in CVD
    10. Differentiate Hot wall reactor and cold wall reactor in CVD
    11. Classify CVD based on the operating pressure
    12. Brief on the working of PVD
    13. What are the four 4 processes in PVD?
    14. What is the principle of SEM?
    15. How are backscattered, secondary and Auger electrons utilised in SEM?
    16. What is the principle of TEM?
    17. How does unscattered, elastically scattered and inelastically scattered electrons
    provide information in TEM?
    18. What is the principle of AFM?
    19. Comment on the working concept of AFM
    Big questions
    1. DOS for low dimentional systems
    2. CNT Basics, properties and synthesis
    3. CVD, PVD
    4. SEM, TEM, AFM
    5. ML

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