Technical Explanation Revision: 01

PEP Rectifier Issue date:

Prepared by:
2021-02-16
Martin Hansmann

Diodes Approved by: Bernhard König

Keyword: Rectifier, Rectifier Diodes, Tjmax=175°C, 1600V, 2200V

1. Introduction and Features ...........................................................................................................1

1.1 Product Family Overview ........................................................................................................2
1.1.1 SKR PEP 1600V ...............................................................................................................2
1.1.2 SKR PEP 2200V ...............................................................................................................2
2. General Considerations and Cross-reference ..................................................................................2
2.1 Cross-Reference SKR PEP 1600V vs. Current SKR ......................................................................3
3. Naming Convention ....................................................................................................................4
4. Data Sheet Explanation ...............................................................................................................4
4.1 Highlights Column .................................................................................................................5
4.2 Absolute Maximum Ratings .....................................................................................................5
4.3 Electrical Characteristics ........................................................................................................6
4.4 For power loss calculation only ................................................................................................6
4.5 Thermal Characteristics..........................................................................................................6
4.6 Mechanical Characteristics ......................................................................................................6
4.7 Drawings..............................................................................................................................7
4.8 Reliability Tests .....................................................................................................................7
5. Instructions and Recommendations for Use ...................................................................................7
6. Summary ..................................................................................................................................7

1. Introduction and Features

Diodes by SEMIKRON featuring the Power Enhancing Passivation technology (PEP) represent the next
generation of input rectifier devices. They combine the established mesa edge termination known from
today’s classic SKR (SEMIKRON Rectifier) diodes [3] with an innovative passivation process, allowing
customers either to make use of a higher junction temperature and/or to increase the reliability of their
power device.

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 Figure 1: SKR PEP Wafer Appearance

The advent of PEP diodes reflects the requirements of a power semiconductor market which has changed
significantly over the last decade: emerging regions like China became the main drivers for further growth.
In these regions, power semiconductor devices are often exposed to challenging environmental conditions
and reduced quality of the power grid.
Moreover, mainstream IGBT applications shifted from a Tjop=125°C to a Tjop=150°C platform increasing
power density and reducing costs. Major IGBT vendors already announced the next generation of IGBTs
suitable for Tjop=175°C. In power integrated modules (PIM), where the input rectifier is bundled with the
IGBT inverter side, the increase of the operation temperature of the inverter will inevitably lead to an
increased operation temperature of the input rectifiers due to thermal coupling.
These challenging new requirements have been considered in the development of PEP diodes.

1.1 Product Family Overview

At market launch, the PEP diode technology consists of two product families: SKR PEP 1600V and SKR PEP
2200V.

1.1.1 SKR PEP 1600V

The main feature of the SKR PEP 1600V family is the T jmax increase by 25°C to Tjmax=175°C. This allows for
20% to 25% higher current density compared to the existing SKR technology under the same thermal
boundary conditions. Moreover, it makes the rectifier diode an ideal fit for next generation IGBTs.
On the other hand, it is fully compatible to the previous SKR generation – the initial set of diodes types
have the same footprint and similar electrical properties as the established ones. Customers might
therefore benefit from the enhanced reliability but keep the die size the same.
Advancements in chip technology also allow for an improved robustness in humid environments.
Pilot production of a comprehensive set of current ratings has started, and additional sizes might be added
in the near future.

1.1.2 SKR PEP 2200V

For the first time, SEMIKRON offers a bondable rectifier diode with a Vrrm rating of 2200V. They should be
used where line voltage is > 600V or extra safety margin due to limited power grid quality is needed.
Due to the higher VRRM, Tj is limited to 150°C. It features the same advanced humidity protection as the
1600V version.
The portfolio will be expanded depending on the advancement of internal or customer related projects.

2. General Considerations and Cross-reference

The properties of a power rectifier diode depend heavily on the assembly and interconnection technology it
is used in. The specifications given in the bare die data sheet reflect the proven performance in an industry
standard power module-like assembly with specific electrical and thermal properties. Moreover, certain
characteristics like the maximum repetitive reverse voltage (VRRM) might not be achieved on the non-
assembled bare die due to the limited dielectric strength under ambient conditions (i.e. in air).

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Using a different set-up (e.g. altering thermal or electrical properties), different ratings might be reached.
Therefore, the nominal or mean forward current IF(DC) and the surge current rating IFSM can only be
understood as a guideline for choosing the correct chip size for a given application. In chapter 4, the
definition and boundary conditions of these ratings will be explained in more detail.

The (electrical) power loss Pv occurring during operation of a semiconductor device (i.e. heat) needs to be
dissipated by means of cooling:

𝑇𝑗 − 𝑇𝑐
𝑃𝑣 = 𝑉 ∙ 𝐼 = (1)
𝑅𝑡ℎ(𝑗−𝑐)

The equation shows that the ampacity of a device with given electrical characteristics (and junction
temperature Tj) is determined by the case temperature Tc and the thermal resistance Rth, which are both
primarily given by the assembly. The case needs to be thermally coupled to a heat sink leading to a defined
case temperature.

Otherwise, for a setup with fixed Tc and Rth, the ampacity is limited by the maximum allowable temperature
of the device known as maximum junction temperature Tjmax. The higher the maximum junction
temperature, the higher the current density/performance of a device is.
It is important to understand that Tjmax describes the maximum allowable local temperature of any part of
the semiconductor device under all conditions which means that a safety margin is required in real-world
applications. This safety margin is typically up to 25°C, and sometimes described as maximum operation
temperature Tjop. It is also the reason why in data sheets, static parameters required for loss calculations
are often given at 25°C below Tjmax.
To calculate the required chip size for a given power rating, some boundary conditions have to be taken
into account. This is rather straight forward for a grid-side rectifier application where dynamic losses can be
neglected: only Rth(j-c) and Tc have to be given to calculate a mean forward current of a sinusoidal or DC
signal, IF(AV) and IF(DC), respectively. To facilitate this calculation, a new graph is given in the data sheets
showing IF(DC) and IF(AV) as a function of Rth(j-c) for two different case temperatures (cf. Figure 2).
Please refer to [2] for an in-depth coverage of interdependencies of the various thermal/electrical
parameters.

Figure 2: IF(DC) and IF(AV) as a function of Rth(j-c) and Tc (SKR031XP16B1F)

2.1 Cross-Reference SKR PEP 1600V vs. Current SKR

As will be explained in more detail in chapter 4, some boundary conditions which are needed for the
calculation of the nominal current have been harmonized for the PEP generation diodes. The R th model
used consistently throughout the new portfolio is a baseplate module with a DBC of 0.38mm thickness (cf.
Figure 3). The IF(AV) and IF(DC) values refer to a case temperature of 85°C, in accordance with most
SEMIKRON module data sheets. The temperature of Tc=85°C is a historical reference value from the times
where devices have been rated with Tjmax=125°C. Therefore, a second curve with Tc=100°C is shown in the

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diagram of Figure 2, reflecting modern devices with state-of-the-art cooling equipment and an increased
junction temperature.

The older data sheets referred to a fixed case or sink temperature of 80°C, depending on chip size.
Due to this fact, currents have to be recalculated to allow for an accurate comparison. As a guideline, it can
be expected that the new SKR PEP diode provides about 20-25% more IF(AV) for the same chip size in the
same thermal assembly due to the 25°C higher permitted junction temperature. Surge current capability is
approximately unchanged at a given temperature.

Figure 3: Rth(j-c) as a function of chip active area

SKR PEP Rth(j-c) curve

2,00
1,80
1,60
1,40
1,20
Rth(j-c) [K/W]

1,00
0,80
0,60
0,40
0,20
0,00
0 100 200 300 400 500
active area [mm2]

3. Naming Convention

For the next generation of rectifier diodes, a new naming convention is introduced which will help
customers to compare diodes more intuitively than in today’s naming. The main difference is an chip area
based size naming instead of a feed size based naming. An example (SKR031XP16B1F) is shown in Table 1.

Table 1: New Naming Convention

Name SKR 031 X P 16 B 1 F

Meaning SEMIKRON chip technology diode voltage top side major delivery
Rectifier size in orientation class metal- design format
Diode mm2 (Vrrm/100) lization revision

Variants - various X: Power P: anode 16: 1600V B: 1: F: sawn-on-

(3 Enhancing on top bondable current frame
digits) Passivation (Al) design
(PEP)

N: cathode 22: 2200V T: tray

on top (waffle
pack)

4. Data Sheet Explanation

Even though the data sheets’ basic layout looks very similar to the current SKR generation, some details
have been improved to provide more useful information with the electrical design engineer in mind.

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Please note that the latest version of data sheets is available on the internet [1].
It is important to read the data sheet to this effect that the specification is only valid for a properly
assembled chip, i.e. with suitable thermal and electrical connections as well as die protection (e.g. soft
mold). The bare die will not show the same properties.

4.1 Highlights Column

On the left hand side of the data sheet, a column with grey background highlights the main features of the
device, including the footprint, voltage class and the mean forward current for a direct current signal IF(DC).

IF(DC) is calculated similar to IF(AV) (cf. section 4.2) but for an ideal direct current, and is regarded as the
nominal current of the diode. The boundary conditions for these ratings can be taken from the table on the
right hand side of the data sheet which is also stated in the footnote.

Moreover, an image of a wafer is shown which represents the typical appearance of the whole product
family, not the individual die size.

4.2 Absolute Maximum Ratings

In this paragraph, the basic limitations of the device are given. Strictly speaking, these parameters do not
reflect an “absolute” rating of the device since the (assembly related) boundary conditions such as R th or
electrical interconnection technology play a decisive role.
The voltage class of the device is defined as the maximum repetitive reverse voltage (V RRM) at room
temperature and a given leakage current level. The break-down voltage V(BR) is temperature dependent
and will decrease by lowering the temperature.

As mentioned in section 2.1, the new data sheets follow a consistent theoretical Rth(j-c) model of a soldered
base plate module with conventional 0.38 mm DBC. The model curve reflecting typical (not worst case) R th
values is shown in Figure 3. The reference case temperature is Tc=85°C, commonly used in SEMIKRON
module data sheets. These boundary conditions apply to the IF(AV) calculation as well as the IF(DC) value in
the grey highlights section.

IF(AV) is the mean forward current for a sine signal under the conditions stated in the data sheet. It can be
written as:

𝐹𝑖 2 ∙ 𝑟𝑇 ∙ (𝑇𝑗 − 𝑇𝑐 )
√𝑉(𝑇0) 2 + 4 ∙ − 𝑉(𝑇0)
𝑅𝑡ℎ(𝑗−𝑐)
(2)
𝐼𝐹(𝐴𝑉) (𝐹𝑖 ) =
2 ∙ 𝐹𝑖 2 ∙ 𝑟𝑇

This is an approximate solution of equation (1).

Fi is a form factor taking the shape of the electric signal into account. In case of I F(AV), a sinusoidal signal of
10 ms period, Fi is equal to /2. In case of a DC signal (IF(DC)), Fi=1. Rth dependencies on signal form or
transient effects are not taken into account.
V(T0) and rT are linearly approximating the maximum I-V forward characteristics following

𝑉𝐹 (𝑎𝑝𝑝𝑟𝑜𝑥𝑖𝑚𝑎𝑡𝑖𝑜𝑛) = 𝑉(𝑇0) + 𝑟𝑇 𝐼𝐹 (3)

The boundary conditions of this linear approximation are stated in the new “For power loss calculation only”
paragraph of the data sheet.

The capability of the device to withstand short-term forward current stress is given by the surge current
rating for a half sine wave signal of 10 ms at room temperature and 150°C (at the beginning of the surge
pulse). The i2t value is calculated from the maximum surge current:

10 ms
𝑖 2 𝑡 = 𝐼𝐹𝑆𝑀 2 ∙
2 (4)

The maximum junction temperature Tjmax describes the temperature not to be exceeded at any time and
point of the semiconductor device. Running the die above T jmax might lead to degradation of the device’s
functionality and reliability.

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4.3 Electrical Characteristics
This section specifies the static and dynamic behavior of the diode at typical and/or maximum value.

The maximum reverse current is given at the defined VRRM voltage and at room temperature as well as an
elevated temperature.

The forward I-V characteristics are specified as the VF typical and maximum value at a defined current
density level, reflecting the current level at wafer/die test for most devices. Since the wafer test does not
allow a testing at the nominal current in most cases, this current level is below IF(DC) rating.
The forward characteristics are stated at three temperatures: T1=25°C; T2=Tjmax-25°C and T3=Tjmax.
The typical I-V characteristics and its temperature dependence are given as a diagram at the end of the
data sheet, as shown in Figure 4.

Figure 4: Typical IF-VF characteristics (SKR031XP16B1F)

Dynamic losses are negligible in a 50Hz/60Hz application. However, a typical reverse recovery time t rr and
reverse recovery charge Qrr under appropriate test conditions is given to characterize the dynamic
behavior. For the definition of trr and its relation to other dynamic parameters, please refer to chapter 3.2
of the Application Manual [2].

4.4 For power loss calculation only

For simulation purposes, a linear approximation of the I-V forward characteristics is also given in the data
sheets as parameters V(T0) and rT. It follows equation (3).
The two points of the I-V curve used for the linear approximation are chosen to be the defined current
density level of the VF data sheet specification (cf. section 4.3) and 3 times this value. They are also
explicitly mentioned in the conditions field.
The maximum curve approximation by means of parameters V(T0) and rT include adequate safety margins.
With this linear approximation, IF(AV) and IF(DC) can be calculated using equation (2). The validity of this
approximation depends on the application and must be verified on the customer side.

4.5 Thermal Characteristics

Thermal characteristics given in the data sheets are the range of junction temperature T j and storage
temperature Tstg, respectively.
Solder temperature Tsolder recommendations are given for two different time intervals. Exceeding the
thermal budget as described in the data sheet might lead to an altering of chip properties including
reliability.

4.6 Mechanical Characteristics

Mechanical characteristics include the die dimensions and area. The dimensions are given as the raster size
of the die on the wafer which is in fact an upper limit for the actual chip outline since some material will be
consumed during the dicing process.

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On the left hand side of this section, a diode symbol shows the orientation of the device: in the standard
configuration, the anode connection is on the top of the device, and the cathode on the bottom.

Moreover, the chip metallizations are described. Usually, the anode (upper) metallization is an Al contact
suitable for thick wire bonding. The cathode (backside) metallization is a multilayer contact system whose
main components are nickel and a terminating Ag layer. This contact is compatible with a wide range of
assembly processes.

The type of packaging is indicated in the mechanical characteristics section. In 1600V technology, SKR PEP
diodes ≤ 106 mm2 size are delivered as sawn-on-frame dies (150 mm diameter wafer). The
“Chips/Package” information therefore defines the number of chips per wafer. This is also the maximum
number of good dies per wafer which might vary due to variation in yield.
For SKR 1600V PEP diodes > 106 mm2 and all SKR PEP 2200V diodes, dies are currently delivered in waffle
packs/trays. The packaging unit is a tray pack, consisting of 6 trays.

4.7 Drawings
The drawings attached to the data sheets are primarily meant to support the die bonding and bond layout
design processes at the customer site. A general tolerance of +/-0.20 mm for all lateral dimensions and
+/-0.4 mm for roundness should be considered. The specified mean max. chip thickness includes
topological features such as metallization, thus the general tolerance of +/-0.03 mm includes the variations
of several distinct processes.

4.8 Reliability Tests

During qualification, PEP rectifier diodes have been subjected to reliability testing. An (non-exclusive)
example of reliability tests applied can be found in Table 2.
All chip related reliability tests must be performed in an assembled state (e.g. standard module).
Interaction between the chip itself and the assembly might influence the results of the reliability testing.
Hence, reliability performance must be verified on the customer side in the specific assembly used.

Table 2: Reliability Tests for Rectifier Diodes and Thyristors

Test Reference

High temperature storage (HTS) IEC 60068-2-2 Test B

Low temperature storage (LTS) IEC 60068-2-1

Storage in damp heat (with voltage load) IEC 60068-2-67

High temperature reverse bias (HTRB) IEC 60749-23

Power cycling (PC) IEC 60749-34

Thermal Cycling IEC 60068-2-14 Test Na

5. Instructions and Recommendations for Use

Please refer to the respective chapter in the Technical Explanation Rectifier Diodes and Thyristors [3]
regarding packaging, labeling and storage of SEMIKRON bare die products.

6. Summary

The new generation of SEMIKRON rectifier diodes in Power Enhancing Passivation (PEP) technology reflects
an ideal combination of the well-proven mesa junction termination design with an innovative passivation
scheme allowing to enhance reliability and increase the current density at the same time. It is fully
compatible to the highly integrated PIM modules of the upcoming IGBT generations due to its unique Tjmax
of 175°C.
Moreover, SEMIKRON extends its device offerings also to the 2200V voltage class reflecting the market
requirement for higher robustness in emerging markets

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Figure 1: SKR PEP Wafer Appearance .................................................................................................2
Figure 2: IF(DC) and IF(AV) as a function of Rth(j-c) and Tc (SKR031XP16B1F) ................................................3
Figure 3: Rth(j-c) as a function of chip active area ..................................................................................4
Figure 4: Typical IF-VF characteristics (SKR031XP16B1F) ......................................................................6

Table 1: New Naming Convention ......................................................................................................4

Table 2: Reliability Tests for Rectifier Diodes and Thyristors .................................................................7

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Symbols and Terms

Letter Symbol Term

Fi form factor of electric signal

i 2t permitted limit integral

IF forward current

IF(AV) mean forward current (sine signal)

IF(DC) mean forward current (DC signal)

IFSM maximum forward surge current

Pv power dissipation

Qrr reverse recovery charge

rT forward slope resistance (linear approximation)

Rth thermal resistance

Tc case temperature

Tj junction temperature

Tjmax maximum junction temperature

Tjop maximum operation junction temperature

trr reverse recovery time

Ts (heat) sink temperature

Tsolder soldering temperature

Tstg storage temperature

V(BR) avalanche break-down voltage

VF forward voltage

VRRM maximum repetitive peak reverse voltage

V(T0) forward threshold voltage (linear approximation)

A detailed explanation of the terms and symbols can be found in the "Application Manual Power
Semiconductors" [2]

References
[1] www.SEMIKRON.com
[2] A. Wintrich, U. Nicolai, W. Tursky, T. Reimann, “Application Manual Power Semiconductors”, 2nd
edition, ISLE Verlag 2015, ISBN 978-3-938843-83-3
[3] SEMIKRON Technical Explanation Rectifier Diodes and Thyristors, (2015-09-25, Rev.00), available on
www.semikron.com

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IMPORTANT INFORMATION AND WARNINGS
The information in this document may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). This document describes only the usual characteristics of products to be expected in typical
applications, which may still vary depending on the specific application. Therefore, products must be tested for the
respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is
responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures
to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become
faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations,
norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized
representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or
any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or
warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information
herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any
license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others.
SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property
rights of any third party which may arise from applications. This document supersedes and replaces all information
previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.

SEMIKRON INTERNATIONAL GmbH

Sigmundstrasse 200, 90431 Nuremberg, Germany
Tel: +49 911 6559 6663, Fax: +49 911 6559 262
[email protected], www.semikron.com

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