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Lecture 9 - 2022

A pn junction diode consists of a p-type and n-type semiconductor material joined together. When forward biased, it allows current to flow easily. When reverse biased, it blocks current flow due to the widened depletion region. Key characteristics include the built-in potential barrier, forward/reverse biasing effects on current flow, and applications such as rectification. Breakdown can occur through Zener or avalanche effects if the reverse voltage is too high. Diodes are fabricated using grown, alloyed, or diffused junctions and are important devices used in electronics.

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31 views21 pages

Lecture 9 - 2022

A pn junction diode consists of a p-type and n-type semiconductor material joined together. When forward biased, it allows current to flow easily. When reverse biased, it blocks current flow due to the widened depletion region. Key characteristics include the built-in potential barrier, forward/reverse biasing effects on current flow, and applications such as rectification. Breakdown can occur through Zener or avalanche effects if the reverse voltage is too high. Diodes are fabricated using grown, alloyed, or diffused junctions and are important devices used in electronics.

Uploaded by

edddy
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Physical Electronics

ELE 1104
Lecture 9
PN Junction
• Recall from previous lectures

– Drift current

– Diffusion current

– Space charge region

– Built-in potential
PN Junction Diode
• A pn junction has a built-in potential (barrier potential),
which can only be overcome by applying an external voltage
to the pn to start conduction.
• Two metallic contacts are made at the two ends of the pn
junction – one on the p-side and the other on the n-side.
• A pn junction with two metallic contacts is know as a pn
junction diode.
• The process of applying an external voltage is called
“biasing”.
• There are two ways in which we can bias a pn junction diode,
forward and reverse bias.
PN junction diode illustrations

A pn junction diode is one of


the simplest semiconductor
devices around, and has the
characteristic of passing
current in only one direction
only. See direction of
current

Source : Neamen
Forward bias
P-type region:
• Electrons will be attracted
towards the positive terminal.
• Hence, the concentration of
electrons nearer to the terminal
increases and these electrons
recombine with holes.
• The number of holes reduces in
the p-type region away from the
junction, and it is increased in
the p-type region nearer to the
junction.
• As such holes are shifted from
terminal to junction.
• Higher concentration of holes
adjacent to the negative
impurity ions layer -> electrons
Forward bias
P-type region:
• Higher concentration of holes
adjacent to the negative
impurity ions layer -> electrons
of the negative ions are
attracted and recombine with
those holes.

• New holes are created in the


depletion layer.

• Consequently, the width of this


negative ions layer is reduced
and finally the layer vanishes.
Forward bias
N-type region:
• Similarly due to the negative
terminal of the source, the free
electrons in the n-type region
are repelled towards the
junction, where they find a layer
of positive impurity ions and
start to recombine with the ions.

• Consequently, the width of the


positive impurity ions layer is
reduced and finally the layer
vanishes.

• Hence, both layers of the ions


disappear, and there will be no
more depletion layer.
Reverse bias
• Positive terminal of a voltage
source is connected to the n-
type region and the negative-
terminal of the source is
connected to the p-type region.
• The polarity of this potential
barrier is the same as the
polarity of the voltage source
applied during reverse biased
conditions.
• If reverse bias voltage across the
pn junction is increased the
barrier potential developed
across the pn junction is also
increased.
• Hence the depletion region is
widened.
Reverse bias
• When positive terminal of the source is connected to the n-type
region, the free electrons of that region are attracted towards
positive terminal of the source.

• More positive impurity ions are created in the depletion layer,


consequently widening the layer of positive impurity ions.

• At the same time since negative terminal of the source is


connected to the p-type region of the junction, electrons are
injected in this region.
• Due to the positive potential of the n-type region the electrons are
drifted towards the junction and combine with holes adjacent to
the layer of positive impurity ions and create more positive
impurity ions in the layer.
• The thickness of the layer, therefore, increases
Biasing

The effects of a bias


at a pn junction on
the depletion width
W, built in potential
Vo, and the energy
band diagrams for
a) Zero bias
(equilibrium)
b) Forward bias
c) Reverse bias

Source: Streetman
PN junction V I characteristics

Ideal diode Equation

Source: Kasap
Junction breakdown
• The reverse voltage across a pn junction can not be increased
without limit.

• At some voltage, the reverse biased current increases rapidly.

• This applied voltage at this point is the break down voltage.

• Two physical mechanisms give rise to the reverse biased


breakdown in a pn junction the Zener effect and the
avalanche effect.
Zener breakdown
• When we increase the reverse voltage across the pn junction
diode, what really happens is that the electric field across
the diode junction increases (both internal and external).

• This results in a force of attraction on the negatively charged


electrons at junction. This force frees electrons from their
covalent bond and moves those free electrons to conduction
band.

• When the electric field increases (with applied voltage), more


and more electrons are freed from their covalent bonds.

• This results in drifting of electrons across the junction and


electron hole recombination occurs.
Zener breakdown
• So a net current is developed and it increases rapidly with
increase in electric field.

• Zener breakdown phenomena occurs in a pn junction diode


with heavy doping & thin junction (means depletion layer
width is very small).

• Zener breakdown does not result in damage of diode. Since


current is only due to drifting of electrons, there is a limit to
the increase in current as well.
Avalanche breakdown
• Avalanche breakdown occurs in a pn junction diode which
is moderately doped and has a thick junction (means its
depletion layer width is high).

• Avalanche breakdown usually occurs when we apply a


high reverse voltage across the diode (obviously higher
than the Zener breakdown voltage).

• So as we increase the applied reverse voltage, the electric


field across junction will keep increasing.
Avalanche breakdown

• This generated electric field exerts a force on the electrons at


junction and it frees them from covalent bonds. These free
electrons will gain acceleration and start moving across the
junction with high velocity.

• This results in collision with other neighboring atoms. These


collisions in high velocity will generate further free electrons.
These electrons will start drifting and electron-hole pair
recombination occurs across the junction.

• This results in net current that rapidly increases.


PN junction breakdown characteristics
Applications of pn junction diode
• A p n junction diode can be used to convert the alternating current
(AC) to the direct current (DC). These diodes are used in power supply
devices.
• If the diode is forward biased, it allows the current flow. On the other
hand, if it is reverse biased, it blocks the current flow. In other words,
the pn junction diode becomes on when it is forward biased whereas
the pn junction diode becomes off when it is reversed biased (i.e., it
acts as switch). Thus, the pn junction diode is used as electronic
switch in digital logic circuits.

• PN junctions under applied voltage: diodes, transistors, light-


emitting devices, and lasers.
• PN junctions under illumination: solar cells, photodetectors.
Fabrication of pn junction
• Grown junction

• Alloyed junction

• Diffused junction

• Ion implantation
Assignment
• Schottky Barrier diode
– Describe the Energy band diagram
– Forward and reverse biasing of the barrier diode
– Current-voltage characteristics
– Applications of the Schottky barrier diode

– In groups of 8 to 10.
– Type out your solutions save as pdf documents.
– End date : TBA.
References
• S.O. Kasap, Principles of Electronic Materials and
Devices, 3rd Edition (Read Chapter 6)

• Donald A. Neamen, Semiconductor Physics and


Devices, Basic Principles, 4th Ed (Read Chapter 7)

• B.Streetman, Solid state Electronic Devices, 4th Ed


(Chapter 5)

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