Capacitors & Capacitance 2024
Capacitors & Capacitance 2024
4) .
Net electrostatics Field is zero in the interior of a conductor .
* -
Ext-Eind
+ -
-
->
I -
Eind + >
Net Field E =
<
-
7 +
>
Eext= Find
-
> - +
>
Here
- - +
3
SO E =
0
↑
conductor
(T .
It the surface of a
charged conductor
,
electrostatic field must be normal to the surface
at
every point
.
charge a zero
any excess
at its surface .
ng
M
N) Electric Field at the Surface of a
charged conductor E =
n = Surface change density
ra P ysics
Electrostatic Shielding
The phenomenon of making a
region free from any electric field is called electrostatic
h
shielding. It is based on the fact that electric field vanishes inside the cavity of a
hollow conductor .
capacitor
· A Capacitor is a
system of two conductors
Gu separated by an insulator .
conductor is Capacitor
a
called the of the
the
charge charge
O
↳
↳ conductor ·
ruji as .
Y V2
· V =
O
·
Capacitor Is used to store charge in a small space .
Symbol of Capacitor
Capacitance / Capaci ty
·
capacity of a conductor is the ratio of charge given to the conductor to the rise in
its potential It is denoted by C .
,
is a
very big unit
:
·
capacitance depends upon the
following factors
I) Size and shape of Conductor .
+9ii
Isolated e
Capacitance of an Spherical Capacitor
-
im
.
R
consider an Isolated Spherical conductor of Radius The Charge
.
G is uniformly <
ene
I
distributed over its entire surface assumed to be concentrated at the Centre of the sphere
,
.
t
+
· The potential at
any point on the surface of the spherical conductor will be +
y
=
Dielectric
Dielectric are
insulating
produce electric effect without conduction
material that can .
e .
2) .
non-polar dielectric (like N2 , O2 , benzene , methane etc) are
Non-Polar dielectric : -> The
made up of non-polar atom/molecule , in which centre of positive
charge coincides with the
centre of
negative charge of the atom molecule e g N2 , O2 , benzene methane .
.
,
.
·
Polarization in dielectric and Polarisation Vector .
Partion he material
vector-Lip emoment
jaugra
. P= XeE .
ng
Behaviour of conductor dielectric in external electric field
ra P ysics
·
a and a an .
h
Here Ein= induced electric field .
Gu
Eo= External electric field .
rujiHere E F-Ei
E
E
.
- -
=
for uniform electric field ,
Potential difference is
Ed rd
y Y & r
A G Charge
= =
on
= = :
So
cap acitor .
Sanch
↓
So
& E i C A
jangel
e
=
=
.
C nicha
then A =
a vacuum
A
between the plates then then Net Electric field E is given by
+
-
vacuum Fo-Ein
E
E = T E =
Here E=
I
Zo Eo-Ein
E
=
t
-
I
where K- dielection
E -Die ro-ri
-
=
=
15 ch - constant -
( for Vacuum]
C
G Co
A
= = =
C= CoK
↳ increases K times
Capacitance .
R t + + +
(for vacuum)
+ + + +
Capacitance C
2 & Electric field
Eo Warm ↓Eo
=
ng
- - u . . . . . a
d Dielectric slab
↑ E, t
When dielectric slab isplaced partially between the plates of
ra P ysics
the Capacitor .
X
I + + +
t
I ~
E
Eo(d-t)
Eold-t)+Eot where Eo/K
y =
+ Et => X = =
E((d- t) ) (* h
) =
y =
+ =
Y =
++ * =
=
-
y
· if the dielectric fills the entire space between the plates Gu
then t d C
kH
=
=
ruji
if conductor is :K for
plates of Capacitor C=
et
·
Combination of Capacitors
SERIES q -
q Q Q PARALLEL
se
-
v
Y C2
-
In Parallel Combination
,
voltage remain same
In Series Charge remain same and Potential and charge divided
+Re
.
divided
The total Potential drop V across the combination az =X
G, + Q2
V V Ve Here Y
=
= +
q CV Q C, X Q2 C2X
= = =
and V
& & Ve
=
=
,
(V GV + C2X
=
ange
2
,
(V (2 (2) Y
=
+
y x y
& & +
= = =
+
sand
C 0 Cz
=
+
, 2 &
,
↓ I,
=
stored in a Capacitor
Energy
The work done in charging the Capacitor is stored as its electrical potential energy .
d v'dQ dN 60
G'
=
= => .
i jangra [201
kn =
W =
+ Q This work done is stored as
a
u
10 1(V q CX
·
a)
= =
=
=
ng
ra P ysics
Force between the plates of a Capacitor
q -
q Electric Susceptibility (Xe)
h
I
-Electric field on the
negative It describes the electrical behaviour of
+
-plate due to positive charge is a dielectric It is a dimensionless constant
.
t 1 -
E =
I
=
1 Gu
A
t --
220 2AEo Relation between
ruji dielectric constant & electric
susceptibility can be
given as
1
Sunil
F =
GE =
F =
2ASo