EXP NO: 4

BJT Characteristics & Common-Emitter Transistor Amplifier

Objectives:

To graph the collector characteristics of a transistor using experimental methods.

To measure AC and DC voltages in a common-emitter amplifier.

Equipment:
Instruments
1 DC Power Supply
3 Digital Multimeter (DMM)
1 Function Generator
1 Oscilloscope
Components
Capacitors: 15 F, 100 F
Resistors:
1 k , 3 k , 10 k , 33 k , 330 k , 10 k potentiometer, 1M
potentiometer
Transistors:
2N3904
Procedure:
Part A : The Collector Characteristics (BJT)
1. Construct the circuit of Fig. 4.1. Vary the 1M potentiometer to set IB = 10
A as in Table 4.1.
DC Supply

A
1 M
C

2 0 V

a s eC

B = 3 3 0 k

E m

= 1 k

l l e

i t t e

C
t o

B +
r

A
1 0 k
C

IB

Fig. 4.1
2. Set the VCE to 2V by varying the 10k potentiometer as required by the first
line of Table 4.1.
3. Record the VRC and VBE values in Table 4.1.

4. Vary the 10 k potentiometer to increase VCE from 2V to the values appearing

in Table 4.1. (Note: IB should be maintained at 10 A for the range of VCE
levels.)
5. Record VRC and VBE values for each of the measured VCE values. Use the mV
range for VBE.
6. Repeat step 2 through 5 for all values of IB indicated in Table 4.1.
7. Compute the values of IC (from IC = VRC/RC) and IE (from IE = IB+IC). Use
measured resistor value for RC.
8. Using the data of Table 4.1, plot the collector characteristics of the transistor on
a graph paper. (Plot IC versus VCE for the various values of IB. Choose an
appropriate scale for IC and label each IB curve).
Part B : Common-Emitter DC Bias
1.
2.
3.
4.
5.
6.
7.
8.

Measure all resistor values (R1, R2, RC and RE) from circuit in Fig. 4.2 using DMM.
Calculate DC Bias values (VB, VE, VC and IE) and record them.
Calculate AC dynamic resistance, re.
Construct circuit as of Fig. 4.2 and set VCC = 10 V.
Measure the DC bias values (VB, VE, VC and IE) and record them.
Calculate IE using values obtained in Step 5.
Calculate re using the value of IE from Step 6.
Compare value of re obtained both from Step 3 & 7.
V C

3 3 k R

Function
Generator
V s i g

C = 1 0 V
DC Supply

3 k

1 5 u

a s e

E m

1 0 k R

1 k

V o

To Oscilloscope
5 u F
l l e c Or
t oDMM
r

i t t e

1 0 u

F C

Fig. 4.2
PSPICE Instructions:
Using PSPICE Simulation, find the DC Bias values (VB, VE, VC and IE) for the circuit in Fig. 4.2.
Compare the values obtained from PSPICE with the experimental ones.

----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

Results and Calculations:

Part A
3. Table 4.1
IB
( A)

VCE
(V)
meas

VRC
(V)
meas

IC
(mA)
(calc)

VBE
(V)
meas

IE
(mA)
(calc)

2
4
10

6
8
2
4

30

6
8
2

50

4
6
8

8. Graph IC versus VCE for each value of IB (use graph paper).

Part B
1. R1 (measured) = ____________, R2 (measured) = ___________,
RC (measured) = ___________, RE (measured) = ___________
2. VB (calculated) = ___________, VE (calculated) = ___________
VC (calculated) = ___________, IE (calculated) = ___________
3. re (calculated) = ___________

5. VB (measured) = ___________, VE (measured) = ___________

VC (measured) = ___________,

6. IE (calculated) using measured values of VE and RE = __________

I E = VE / RE

7. re (measured) = ____________, using IE from Step 6.

EXP NO: 5

BJT Biasing Circuits

Objectives:
To determine the quiescent operating conditions of the fixed- and voltage-divider-bias BJT
configurations.
Equipment:
Instruments
1 DC Power Supply
3 Digital Multimeter (DMM)
Components
Resistors: 680 , 1.8 k , 2.7 k , 6.8 k , 33 k , 1 M
Transistors: 2N3904, 2N4401
Procedure:
Part A : Fixed-Bias Configuration
1. Measure all resistor values (RB and RC) from circuit in Fig. 5.1 using DMM. Record
them.
2. Construct circuit as of Fig. 5.1 using 2N3904 transistor and set VCC = 20 V.
3. Measure the voltages VBE and VRC. Record them.
4. Calculate the resulting base current, IB and collector current, IC. Using the values
obtained,
find .
5. Using the values obtained in Step 4, calculate the values of VB, VC, VE and VCE.
6. Energize the network in Fig. 5.1, measure VB, VC, VE and VCE.
7. How do the measured values (Step 6) compare to the calculated values (Step 5)?
8. Simply remove the 2N3904 transistor and replace with 2N4401 transistor.
9. Then, measure the voltages VBE and VRC. Using the same equations, calculate the
values of
IB and IC. From the values obtained, determine the value for
2N4401 transistor.
10. Compile all the data needed for both transistors in Table 5.1.

IC
IB
+
VBE

IE

+
VCE
-

Fig. 5.1
11. Calculate the magnitude (ignore the sign) of the percent change in each quantity due
to a
change in transistors.
12. Place the results of your calculations in Table 5.2.
Part B : Voltage-Divider-Bias Configuration
1. Measure all resistor values (R1, R2, RB and RC) from circuit in Fig. 5.2 using DMM.
Record
them.
2. Using the determined for 2N3904 transistor in Part B, calculate the theoretical
values of
VB, VE, IE, IC, VC, VCE and IB for the network shown in Fig. 5.2.
Record them in Table 5.3.
3. Construct the network of Fig. 5.2 and measure VB, VE, VC and VCE. Record them in
Table 5.3.

I1

IC

IB

I2

+
VBE

IE

+
VCE
-

Fig. 5.2
4. Measure the voltages VR1 and VR2 (take readings to the hundredth or thousandth
place). Calculate the currents IE and IC and the currents I1 and I2. Using Kirchoffs
current law, calculate the current IB. Record IE, IC and IB values in Table 5.3.
5. How do the calculated and measured values of Table 5.3 compare?

6. Compile the measured values of VCE (Step 3), IC and IB (Step 4) along with the
magnitude of in Table 5.4.
7. Simply remove the 2N3904 transistor and replace with 2N4401 transistor.
8. Then, measure the voltages VCE and VRC. Also, measure the voltages VR1 and VR2
(take readings to the hundredth or thousandth place). Calculate the current IC
and the
currents I1 and I2. Using Kirchoffs current law, calculate the current
IB .
9. Complete Table 5.4 with the values of VCE, IC, IB and .
10. Calculate the magnitude (ignore the sign) of the percent change in each
quantity due to a change in transistors.
11. Place the results of your calculations in Table 5.5.
PSPICE Instructions:
Using PSPICE Simulation, find the values of VB, VE, VC, VCE, IC, IB and IE for the circuit in Fig.
5.2. Compare the values obtained from PSPICE with the experimental ones.
fgfg

----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

Results and Calculations:

Part A
1. RB (measured) = ______________, RC (measured) = _______________
3. VBE (measured) = ______________, VRC (measured) = ______________
4. IB = __________________, IC = _________________, = _____________
IB =

VRB VCC VBE

=
=
RB
RB

IC =

V RC
=
RC

IC
=
IB

5. VB (calculated) = _____________, VC (calculated) = _______________

VE (calculated) = _____________, VCE (calculated) = ______________
Show your works!

6. VB (measured) = _____________, VC (measured) = _______________

VE (measured) = _____________, VCE (measured) = ______________
7. Comparison of results from Step 5 & Step 6 :

IB = __________________, IC = _________________, = _____________

IB =

VRB VCC VBE

=
=
RB
RB

IC =

V RC
=
RC

IC
=
IB

10.
Trans. Type
2N3904
2N4401

VCE (V)

IC (mA)

Table 5.1
11.

% =

% I C =

( 3904 )

I C ( 4401) I C ( 3904)
I C ( 3904)

%VCE =

% I B =

( 4401 ) ( 3904 )

x100% =

VCE ( 4401) VCE ( 3904 )

VCE ( 3904 )

I B ( 4401) I B ( 3904)
I B ( 3904)

x100 % =

x100% =

x100% =

12.

IB (A)

----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

9. VBE (measured) = ______________, VRC (measured) = ______________

----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

%IC

%VCE

%IB

Table 5.2

Part B
1. R1 (measured) = ____________, R2 (measured) = ___________,
RC (measured) = ___________, RE (measured) = ___________
2. VB (calculated) = ___________, VE (calculated) = ___________
IE (calculated) = ___________, IC (calculated) = ___________
VC (calculated) = ___________, VCE (calculated) = __________
IB (calculated) = ____________
Show your works!

2N3904

VB(V) VE(V) VC(V) VCE(V) IE(mA) IC(mA) IB(A)

10

Table 5.3
4. Show your works for calculating IE and IC (using measured values recorded in
Table 5.3).

I1 = _______________, I2 = ________________
I1 =

V R1
=
R1

I2 =

VR 2
=
R2

Using KCL, IB = _______________

(Currents calculated from measured values; considered as measured IE, IC & IB)
5. Comparison of calculated and measured values of Table 5.3:

6.
Trans. Type
2N3904
2N4401

VCE (V)

IC (mA)
Table 5.4

8. VCE (measured) = _______________

IC =

VCC VCE
=
RC + R E

11

IB (A)

----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

Calculated (Step 2)
Measured (Step 3&4)

----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

I1 = _______________, I2 = ________________
I1 =

V R1
=
R1

I2 =

VR 2
=
R2

Using KCL, IB = _______________

9. Complete Table 5.4 (Step 6) with the values obtained in Step 8 and value
obtained for 2N4401 transistor.

10.
% =

% I C =

( 3904 )

I C ( 4401) I C ( 3904)
I C ( 3904)

%VCE =

% I B =

( 4401 ) ( 3904 )

x100% =

VCE ( 4401) VCE ( 3904 )

VCE ( 3904 )

I B ( 4401) I B ( 3904)
I B ( 3904)

x100 % =

x100% =

x100% =

11.
%

%IC

%VCE

Table 5.4

12

%IB

13