TCLT100.

Series
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Optocoupler, Phototransistor Output,
SOP-4L, Long Mini-Flat Package

C E FEATURES
4 3 • SMD low profile 4 lead package
• VIORM = 1050 V
• CTR flexibility available see order information
• Special construction
• Extra low coupling capacitance
1 2
• DC input with transistor output
A C
17295-5
• Creepage distance > 8 mm
• Material categorization:
for definitions of compliance please see
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LINKS TO ADDITIONAL RESOURCES
AGENCY APPROVALS
Product Page Design Tools Models Related
• UL
Documents
• cUL
• DIN EN 60747-5-5 (VDE 0884)
DESCRIPTION • BSI
The TCLT100. series consists of a phototransistor optically • FIMKO
coupled to a gallium arsenide infrared-emitting diode in a
• CQC
4-lead SOP4L package.
Note
• See the safety standard approval list “Agency Table” for more
APPLICATIONS detailed information.
• Switchmode power supplies
• Computer peripheral interface
• Microprocessor system interface

ORDERING INFORMATION

SOP-4L
T C L T 1 0 0 #

10.2 mm
PART NUMBER

AGENCY CTR (%)

CERTIFIED /
PACKAGE 5 mA 10 mA 5 mA
UL, cUL, VDE,
50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
BSI, FIMKO
SOP-4L TCLT1000 TCLT1001 TCLT1002 TCLT1003 TCLT1004 TCLT1005 TCLT1006 TCLT1007 TCLT1008 TCLT1009
Note
• Available only on tape and reel

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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp ≤ 10 μs IFSM 1.5 A
Power dissipation Pdiss 100 mW
Junction temperature Tj 125 °C
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj 125 °C
COUPLER
Total power dissipation Ptot 250 mW
Operating ambient temperature range Tamb -55 to +100 °C
Storage temperature range Tstg -55 to +125 °C
Soldering temperature Tsld 260 °C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF - 1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz Cj - 50 - pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 70 - - V
Emitter collector voltage IE = 100 μA VECO 7 - - V
Collector emitter cut-off current VCE = 20 V, IF = 0 A ICEO - 10 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V
VCE = 5 V, IF = 10 mA,
Cut-off frequency fc - 110 - kHz
RL = 100 Ω
Coupling capacitance f = 1 MHz Ck - 0.3 - pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Rev. 3.0, 13-Feb-2023 2 Document Number: 83515

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CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
VCE = 5 V, IF = 5 mA TCLT1000 CTR 50 - 600 %
TCLT1001 CTR 40 - 80 %
TCLT1002 CTR 63 - 125 %
VCE = 5 V, IF = 10 mA
TCLT1003 CTR 100 - 200 %
TCLT1004 CTR 160 - 320 %
TCLT1001 CTR 13 30 - %
TCLT1002 CTR 22 45 - %
IC/IF VCE = 5 V, IF = 1 mA
TCLT1003 CTR 34 70 - %
TCLT1004 CTR 56 100 - %
TCLT1005 CTR 50 - 150 %
TCLT1006 CTR 100 - 300 %
VCE = 5 V, IF = 5 mA TCLT1007 CTR 80 - 160 %
TCLT1008 CTR 130 - 260 %
TCLT1009 CTR 200 - 400 %

SAFETY AND INSULATION RATINGS

PARAMETER CONDITION SYMBOL VALUE UNIT
Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 2 kV
Partial discharge test voltage - tTr = 60 s, ttest = 10 s, VIOTM 8 kVpeak
lot test (sample test) (see Fig. 2) Vpd 1.68 kVpeak
Isolation test voltage (RMS) VISO 5000 VRMS
VIO = 500 V RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Insulation resistance
VIO = 500 V, Tamb = 150 °C
RIO 109 Ω
(construction test only)
Forward current Isi 130 mA
Power dissipation Pso 265 mW
Rated impulse voltage VIOTM 8 kV
Safety temperature Tsi 150 °C
Comparative tracking index CTI 175
Clearance distance 8.0 mm
Creepage distance 8.0 mm
Insulation distance (internal) 0.40 mm
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.Fig.

Rev. 3.0, 13-Feb-2023 3 Document Number: 83515

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300 VIOTM
t1, t2 = 1 s to 10 s
Phototransistor
250 t3 , t4 =1s
Pso (mW)
ttest = 10 s
200 tstres = 12 s
Vpd
150
VIOWM
VIORM
100

IR-diode
50 Isi (mA)
0
0 t3 ttest t4
0 25 50 75 100 125 150
t1 tTr = 60 s t2 t stres
13930
94 9182-2 Tsi - Safety Temperature (°C)
t

Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
VS = 5 V, IC = 2 mA, RL = 100 Ω,
Delay time td - 3 - μs
(see Fig. 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω,
Rise time tr - 3 - μs
(see Fig. 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω,
Fall time tf - 4.7 - μs
(see Fig. 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω,
Storage time ts - 0.3 - μs
(see Fig. 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω,
Turn-on time ton - 6 - μs
(see Fig. 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω,
Turn-off time toff - 5 - μs
(see Fig. 3)
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
Turn-on time ton - 9 - μs
(see Fig. 4)
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
Turn-off time toff - 10 - μs
(see Fig. 4)

IF IF +5V IF I F = 10 mA +5V
0 0
I C = 2 mA; adjusted through IC
input amplitude

R G = 50 Ω R G = 50 Ω
tp tp
= 0.01 = 0.01
T T
t p = 50 µs t p = 50 µs
Channel I Channel I
Oscilloscope Oscilloscope
R L = 1 MΩ R L ≥ 1 MΩ
Channel II Channel II
C L = 20 pF C L ≤ 20 pF
50 Ω 100 Ω 50 Ω 1 kΩ

95 10843
95 10804

Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation

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IF

0
tp t
IC
100 %
90 %

10 %
0
tr
td tf t
ts
t on t off
tp Pulse duration ts Storage time
td Delay time tf Fall time
tr Rise time t off (= ts + tf) Turn-off time
t on (= td + tr) Turn-on time 96 11698

Fig. 5 - Switching Times

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

NCTR - Normalized CTR (non-saturated)

Ptot - Total Power Dissipation (mW)

300 1.2
Coupled device IF = 5 mA
250 1.0

200 0.8
Phototransistor
150 0.6
IR-diode
100 0.4

50 0.2 Normalized to CTR value:

IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0 0
0 40 80 120 -60 -40 -20 0 20 40 60 80 100 120
9611700-1 Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)

Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 8 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature

100 1.2
Tamb = 110 °C
NCTR - Normalized CTR (sat)
IF - Forward Current (mA)

Tamb = 75 °C 1.0
Tamb = 25 °C
10 Tamb = 0 °C 0.8
Tamb = - 55 °C

0.6

1 0.4

0.2 Normalized to CTR value:

IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0.1 0
0.6 0.8 1.0 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120

VF - Forward Voltage (V) Tamb - Ambient Temperature (°C)

Fig. 7 - Forward Current vs. Forward Voltage Fig. 9 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature

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1.4 100
Tamb = 0 °C
NCTR - Normalized CTR (NS)

1.2 VCE = 5 V

IC - Collector Current (mA)

Tamb = -55 °C
1.0 Tamb = 25 °C 10

0.8
1
0.6 Tamb = 75 °C
0.4 Tamb = 100 °C
0.1
0.2 Normalized to:
IF = 5 mA, VCE = 5 V
0 0.01
0.1 1 10 100
0.1 1 10 100
IF - Forward Current (mA) 95 11027 IF - Forward Current (mA)

Fig. 10 - Normalized Current Transfer Ratio (non-saturated) vs. Fig. 13 - Collector Current vs. Forward Current
Forward Current

1.2 100
VCE = 0.4 V Tamb = 0 °C
20 mA
NCTR - Normalized CTR (sat)

IC - Collector Current (mA)

Normalized to: Tamb = -55
- °C
1.0
IF = 5 mA, IF = 50 mA
VCE = 5 V,
0.8 Tamb = 25 °C 10 10 mA

5 mA
0.6

0.4 1 2 mA
Tamb = 25 °C
0.2 1 mA
Tamb = 75 °C
Tamb = 100 °C
0 0.1
0.1 1 10 100
0.1 1 10 100
IF - Forward Current (mA) 9510985-1 VCE - Collector Emitter Voltage (V)

Fig. 11 - Normalized Current Transfer Ratio (saturated) vs. Fig. 14 - Collector Current vs. Collector Emitter Voltage
Forward Current

10 000 1.0
IF = 0 mA
ICE0 - Leakage Current (nA)

1000 20 % used
VCEsat - Collector Emitter

VCE = 40 V
Saturation Voltage (V)

0.8
100 CTR = 50 %
used
10 0.6
VCE = 24 V
1
0.4
0.1
VCE = 12 V
0.2
0.01
10 % used
0.001 0
-60 -40 -20 0 20 40 60 80 100 120 1 10 100

Tamb - Ambient Temperature (°C) 9511028-1 IC - Collector Current (mA)

Fig. 12 - Collector Dark Current vs. Ambient Temperature Fig. 15 - Collector Emitter Saturation Voltage vs. Collector Current

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ton/toff - Turn-On / Turn-Off Time (µs)

1000 50
CTR - Current Transfer Ratio (%)

Saturated operation
VCE = 5 V 40 VS = 5 V
RL = 1 kΩ
100
30
toff
20
10

10

ton
1 0
0.1 1 10 100 0 5 10 15 20
9511029-1 IF - Forward Current (mA) 9511031-1 IF - Forward Current (mA)

Fig. 16 - Current Transfer Ratio vs. Forward Current Fig. 18 - Turn-On / Turn-Off Time vs. Forward Current

10
ton/toff - Turn-On/Turn-Off Time (µs)

Non-saturated
operation
8 VS = 5 V
ton RL = 100 Ω

6
toff

0
0 2 4 6 8
9511030-1 IC - Collector Current (mA)

Fig. 17 - Turn-On / Turn-Off Time vs. Collector Current

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PACKAGE DIMENSIONS (in millimeters)
+ 0.30
4.10 max. 10.20 - 0.40

2.30 max. 3.80 7.50 ± 0.20

- 0.05
+ 0.10
0.20
2.00

0.10

Seating plane
0.45 ± 0.1
+ 0.30
0.70 - 0.40

2.54 nom.

4 3
Possible footprint
2.54

8.20
0.90

10.80

technical drawings
1 2 according to DIN
22533 Pin no. 1 identification specifications

PACKAGE MARKING (example)

TCLT1003
V XXXX 68

Note
• XXXX = LMC (lot marking code)

TAPE AND REEL DIMENSIONS (in millimeters)

Ø 1.55

2.7
ESD sticker
1.75

2 4 0.3

Tape slot
7.5

in core
16
10.6

330
(13")
5°

4.25 8
Ø 1.6

2.3

Regular, special Direction of pulling out

or bar code label technical drawings
according to DIN
specification 22662
17999

Fig. 19 - Reel Dimensions (3000 units per reel) Fig. 20 - Tape Dimensions

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SOLDER PROFILE HANDLING AND STORAGE CONDITIONS
Axis Title ESD level: HBM class 2
300 10000
Floor life: unlimited
Max. 260 °C Conditions: Tamb < 30 °C, RH < 85 %
250 255 °C
245 °C
240 °C Moisture sensitivity level 1, according to J-STD-020
217 °C
Temperature (°C)

200 1000
Max. 30 s

2nd line
2nd line

1st line
150
Max. 120 s Max. 100 s
100 100
Max. ramp down 6 °C/s

50 Max. ramp up 3 °C/s

0 10
0 50 100 150 200 250 300
19841-1 Time (s)

Fig. 21 - Lead (Pb)-free Reflow Solder Profile

according to J-STD-020

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