DST Tlp3120-Tde en 4482-479034
DST Tlp3120-Tde en 4482-479034
DST Tlp3120-Tde en 4482-479034
TLP3120
High-Speed Memory Tester
Unit: mm
High-Speed Logic Tester
High-Frequency Measurement Equipment
TOSHIBA 11-7C1
Pin Configuration (top view)
Weight: 0.13 g (typ.)
1: Anode
1 6
2: Cathode
3: N.C.
4: Drain D1
2 5
5: Source
6: Drain D2
3 4
1 2007-10-01
TLP3120
Absolute Maximum Ratings (Ta = 25°C)
Forward current IF 50 mA
Forward current derating (Ta >
= 25°C) ΔIF/°C −0.5 mA/°C
Led
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
OFF-state output terminal voltage VOFF 80 V
Detector
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device is considered as a two-terminal device. LED side pins are shorted together and detector side pins
are shorted together.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Reverse current IR VR = 5 V ⎯ ⎯ 10 μA
Capacitance CT V = 0, f = 1 MHz ⎯ 15 ⎯ pF
VOFF = 20 V, Ta = 50°C ⎯
Detector
2 2007-10-01
TLP3120
Coupled Electrical Characteristics (Ta = 25°C)
IF
VDD
1 6 RL
IF
2 VOUT
VOUT
90%
4
10%
tON tOFF
3 2007-10-01
TLP3120
IF – Ta ION – Ta
100 1500
IF (mA)
1250
(mA)
80
1000
60
750
40
500
20
250
0 0
−20 0 20 40 60 80 100 120 −20 0 20 40 60 80 100 120
IF – V F ION – VON
100 1500
Ta = 25°C Ta = 25°C
50 IF = 5 mA
30 1000
(mA)
(mA)
10 500
ON-state current ION
Forward current IF
5
3 0
1 −500
0.5
0.3 −1000
0.1 −1500
0.6 0.8 1 1.2 1.4 1.6 1.8 −0.4 −0.2 0 0.2 0.4
RON – Ta IFT – Ta
0.10 5
ION = 1250 mA ION = 1250 mA
0.09 IF = 5 mA t < 1s
RON (Ω)
t < 1s 4
0.08
3
0.07
ON-state resistance
0.06
2
0.05
1
0.04
0.03 0
−20 0 20 40 60 80 100 −20 0 20 40 60 80 100
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TLP3120
(μs)
RL = 200 Ω
1000 1000
Switching time tON, tOFF
300 300
tOFF
tOFF
100 100
VDD = 20 V
RL = 200 Ω
50 IF = 5 mA
50
3 5 10 30 50 100 300 −20 0 20 40 60 80 100
IOFF – Ta
10
3
IOFF (nA)
1
OFF-state current
0.3
VOFF = 80 V
0.1
VOFF = 50 V
3
VOFF = 20 V
0.03
0.01
−20 0 20 40 60 80 100
5 2007-10-01
TLP3120
6 2007-10-01
Mouser Electronics
Authorized Distributor
Toshiba:
TLP3120(F)