GD20FSX65L4S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD20FSX65L4S
650V/20A 6 in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 6μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated heatsink using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

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GD20FSX65L4S IGBT Module

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT
Symbol Description Value Unit
VCES Collector-Emitter Voltage 650 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 33
IC A
@ TC=100oC 20
ICM Pulsed Collector Current tp=1ms 40 A
PD Maximum Power Dissipation @ Tj=175oC 93 W

Diode
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 650 V
IF Diode Continuous Forward Current 20 A
IFM Diode Maximum Forward Current tp=1ms 40 A

Module
Symbol Description Value Unit
o
Tjmax Maximum Junction Temperature 175 C
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V

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IGBT Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=20A,VGE=15V,
1.45 1.90
Tj=25oC
Collector to Emitter IC=20A,VGE=15V,
VCE(sat) 1.60 V
Saturation Voltage Tj=125oC
IC=20A,VGE=15V,
1.70
Tj=150oC
Gate-Emitter Threshold IC=0.32mA,VCE=VGE,
VGE(th) 5.1 5.8 6.5 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 2.32 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.05 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.14 μC
td(on) Turn-On Delay Time 15 ns
tr Rise Time 13 ns
td(off) Turn-Off Delay Time 96 ns
VCC=300V,IC=20A,
tf Fall Time 56 ns
RG=18Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 0.32 mJ
Loss
Turn-Off Switching
Eoff 0.35 mJ
Loss
td(on) Turn-On Delay Time 15 ns
tr Rise Time 16 ns
td(off) Turn-Off Delay Time 112 ns
VCC=300V,IC=20A,
tf Fall Time 76 ns
RG=18Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 0.44 mJ
Loss
Turn-Off Switching
Eoff 0.45 mJ
Loss
td(on) Turn-On Delay Time 15 ns
tr Rise Time 17 ns
td(off) Turn-Off Delay Time 120 ns
VCC=300V,IC=20A,
tf Fall Time 80 ns
RG=18Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 0.49 mJ
Loss
Turn-Off Switching
Eoff 0.47 mJ
Loss
tP≤6μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=360V, 100 A
VCEM≤650V

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GD20FSX65L4S IGBT Module

Diode Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
IC=20A,VGE=0V,Tj=25oC 1.60 2.05
Diode Forward
VF IC=20A,VGE=0V,Tj=125oC 1.55 V
Voltage
IC=20A,VGE=0V,Tj=150oC 1.50
Qr Recovered Charge 1.00 μC
Peak Reverse VR=300V,IF=20A,
IRM 30.0 A
Recovery Current -di/dt=1800A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.21 mJ
Energy
Qr Recovered Charge 1.75 μC
Peak Reverse VR=300V,IF=20A,
IRM 32.0 A
Recovery Current -di/dt=1800A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 0.37 mJ
Energy
Qr Recovered Charge 2.20 μC
Peak Reverse VR=300V,IF=20A,
IRM 34.0 A
Recovery Current -di/dt=1800A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 0.47 mJ
Energy

Module Characteristics TC=25oC unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 25 nH
RCC’+EE’ Module Lead Resistance,Terminal to Chip 9.50 mΩ
Junction-to-Case (per IGBT-inverter) 1.445 1.589
RthJC K/W
Junction-to-Case (per Diode-inverter) 2.091 2.300
Case-to-Heatsink (per IGBT-inverter) 0.781
RthCH Case-to-Heatsink (per Diode-inverter) 1.131 K/W
Case-to-Heatsink (per Module) 0.077
F Mounting Force Per Clamp 30 50 N
G Weight of Module 10 g

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 GD20FSX65L4S IGBT Module

40 40
VGE=15V VCE=20V
35 35

30 30

25 25
IC [A]

IC [A]
20 20

15 15

10 10
Tj=25℃
5 Tj=25℃ 5 Tj=125℃
Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 5 6 7 8 9 10 11 12
VCE [V] VGE [V]

Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics

1.4 2
Eon,Tj=125℃ Eon,Tj=125℃
Eoff,Tj=125℃ 1.8
1.2 Eoff,Tj=125℃
Eon,Tj=150℃
1.6 Eon,Tj=150℃
Eoff,Tj=150℃
1 Eoff,Tj=150℃
1.4

1.2
0.8
E [mJ]

E [mJ]

1
0.6
0.8

0.4 0.6
VCC=300V 0.4 VCC=300V
0.2 RG=18Ω IC=20A
VGE=±15V 0.2
VGE=±15V
0 0
0 5 10 15 20 25 30 35 40 0 50 100 150 200
IC [A] RG [Ω]

Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG

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 GD20FSX65L4S IGBT Module

50 10

Module
40
IGBT

30

ZthJH [K/W]
IC [A]

20

RG=18Ω
10 VGE=±15V i: 1 2 3 4
Tj=150oC ri[K/W]: 0.1598 0.3090 0.9548 0.8024
τi[s]: 0.0005 0.005 0.05 0.2

0 0.1
0 200 400 600 800 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance

40 0.8
Tj=25℃ Erec,Tj=125℃
35 Tj=125℃ 0.7 Erec,Tj=150℃
Tj=150℃
30 0.6

25 0.5
E [mJ]
IF [A]

20 0.4

15 0.3

10 0.2
VCC=300V
5 0.1 RG=18Ω
VGE=-15V
0 0
0 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 35 40
VF [V] IF [A]

Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs.IF

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 GD20FSX65L4S IGBT Module

0.7 10
Erec,Tj=125℃
0.6 Erec,Tj=150℃
Diode

0.5

ZthJH [K/W]
0.4
E [mJ]

1
0.3

0.2

VCC=300V i: 1 2 3 4
ri[K/W]: 0.2315 0.4470 1.3821 1.1614
0.1 IF=20A τi[s]: 0.0005 0.005 0.05 0.2

VGE=-15V
0 0.1
0 50 100 150 200 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance

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GD20FSX65L4S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

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GD20FSX65L4S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
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characteristics.

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or which concerns the specific application of our product, please contact the sales office,
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interested we may provide application notes.

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information on the types in question please contact the sales office, which is responsible for
you.

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Changes of this product data sheet are reserved.

©2018 STARPOWER Semiconductor Ltd. 10/29/2018 9/9 Preliminary