EEE - Sop

Academic Statement of Purpose of Saeed-Uz-Zaman Khan Ph.D.
applicant, U Michigan ID #, ECE, Fall’16
Academic Statement of Purpose of Saeed-Uz-Zaman Khan
The revolutionary technological shift from Vacuum Tubes to Solid State Devices always fascinated me as
an inquisitive apprentice of science and technology. With Si-based devices already being exhausted and
novel devices like III-V and 2-D Material FET, TFET, SpinFET and Single-Electron-Transistor emerging
rapidly to sustain the growing need of scalability and performance, we are now very close to another
major technological shift. When that paradigm shift occurs I would like to play a significant role in it and
I strongly believe Ph.D. program at the Department of Electrical and Computer Engineering of
University of Michigan, with its distinguished faculty members, pioneering research groups, and state-
of-the-art research facilities in solid-state devices and nanotechnology can provide me that opportunity.
My inspiration for studying Electrical Engineering came from my father who was in Military Engineering
Services in Bangladesh. In a quest to follow his footstep, I completed Secondary School Certificate and
Higher Secondary Certificate Exams with highest CGPA and merit scholarships from the Education
Board. I chose Bangladesh University of Engineering and Technology (BUET), highest ranked
engineering university in my country, as my undergraduate institution and got admitted in the Department
of Electrical and Electronic Engineering. My strong determination for engineering allowed me to
complete my graduation securing 5th position in my department with a CGPA of 3.95/4.00. As I have
started my M.Sc. Studies at BUET (to be completed in February 2016) I maintained my academic
performance with the 2nd highest CGPA (3.92/4.00) in the department.
Beside my regular academic studies, my constant drive to learn more about Advanced Electronics and
Solid State Devices encouraged me to be a member of IEEE Bangladesh Section and Electron Devices
and Solid State Circuits Society (ED/SSCS) Bangladesh Chapter. As I started to attend Technical Talks
and Seminars on Electron Devices, participated in EDS online Webinars and browsed through “IEEE
Spectrum”, my curiosity for Solid State Devices gradually turned into a solid passion for doing research
in this field and I joined “Nano Device Research Group”, led by Prof. QDM Khosru.
For B.Sc. thesis, under Prof. Khosru, I picked InGaAs Nanowire Channel GAAFET and initially
developed a 2-D self-consistent Schrodinger-Poisson Electrostatics solver using MATLAB and
COMSOL Multiphysics. I rigorously studied the effects of channel material, doping and width variation
and high-k dielectrics on the Electrostatics and Threshold voltage of the GAAFET which were published
in ECS Transactions (vol. 53:1, 2013) and International Journal of Numerical Modeling: Electronic
Networks, Devices, and Fields (vol. 28:4, 2014). Along with numerical simulation, our thesis group
analytically modeled the Threshold voltage and Potential profile of the same device (EDSSC'12). I was
also involved in the development of an NEGF based Transport simulator for GAA and CNTFET. Our
observations about the effects of gate dielectric, and temperature on the transport performances of
CNTFET were published in ECS Transactions (vol. 51:1, 2013) and ECS Journal of Solid State Science
and Technology (vol. 2:9, 2013).
Currently, I am pursuing my M.Sc. thesis under Prof. Khsoru on 2D Transition Metal Dichalcogenides
(WSe2) channel MOSFET. I developed a 1D self-consistent Schrodinger-Poisson Electrostatics and
NEGF based Fast Uncoupled Mode Space (FUMS) Quantum Transport solver for the device, leading to a
publication in ECS Transactions (vol.66:14, 2015).
Academic Statement of Purpose of Saeed-Uz-Zaman Khan Ph.D. applicant, U Michigan ID #, ECE, Fall’16
Besides research and studies, I was actively involved in various extracurricular activities like IFEC'11
(reached final round), IEEE PES Project'13 (working prototype developed), IEEE Xtreme'11 (scored
highest from Bangladesh).
Starting my career as a Lecturer in Feb'13, I excelled at teaching and leadership at BUET. I successfully
conducted courses like Electronics and Compound Semiconductor & Heterojunction Devices and led
several departmental committees. Being elected as the Secretary of IEEE ED/SSCS Bangladesh Chapter
in Jan'15, I effectively organized several Workshops and Distinguished Lecture programs.
In May 2015, I received a $750 travel grant from the Dielectric Science and Technology Division of
Electrochemical Society to attend 227th ECS Meeting at Chicago, USA. I presented my paper on WSe2
MOSFET in the symposium Graphene and Beyond: 2D Materials. At the meeting, I attended sessions on
Advanced CMOS-Compatible Semiconductor Devices, Wide Bandgap Semiconductor Materials and
Devices, Carbon Nanotechnology and Organic Semiconductor Materials and had the opportunity to learn
about the research of prominent groups from MIT, Stanford U., GaTech, UIUC, UCSB, and Cornell
University. Later, during my stay at the USA, I had the privilege to visit the top-notch microelectronics
research facilities of Princeton and Purdue University. This trip boosted my motivation to pursue my
Ph.D. degree in the United States.
The Department of ECE at U. Michigan, with its combination of state-of-the-art research facilities like
“NNIN @ Michigan”, “Lurie Nanofabrication Facility (LNF)”, and “Solid State Electronics Laboratory”
and eminent research faculties, is a perfect fit for my research objectives. I am interested in Prof.
Bhattacharya’s research on polariton lasers and properties of exciton-polariton in InGaN/GaN nanowire
heterostructures grown on Silicon. His recent papers on “Room temperature electrically injected polariton
laser” and “High-Speed Electrical Modulation of Polariton Lasers” made me quite curious about his
work. Prof. Forrest’s research on multi-junction organic photovoltaic cells and blue phosphorescent
OLED is quite fascinating to me as well. Prof. Kanicki’s researches on InGaZnO thin film transistors
and thin film CIGS Solar Cells interest me too. I also found Prof. Lu's works on vertical nanowire Si/Ge
heterojunction devices and Prof. Zhong’s works on Carbon Nanoelectronics, quite exciting.
Throughout my life, I have maintained a balanced profile with dynamic combinations of study, research,
publication, extracurricular activities, and leadership to attain my ultimate goal of being a notable
researcher and academician. I firmly believe doctoral program at the Department of Electrical and
Computer Engineering of University of Michigan can help me to accomplish my goals and allow me to
contribute to the scientific society.

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Academic Statement of Purpose of Saeed-Uz-Zaman Khan Ph.D.

applicant, U Michigan ID #, ECE, Fall’16

Academic Statement of Purpose of Saeed-Uz-Zaman Khan

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