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SEMICONDUCTOR TECHNICAL DATA by MMBT6427LT1/D

   

NPN Silicon
COLLECTOR 3 Motorola Preferred Device

BASE
1

3
EMITTER 2

1
MAXIMUM RATINGS
2
Rating Symbol Value Unit
Collector – Emitter Voltage VCEO 40 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Collector – Base Voltage VCBO 40 Vdc
Emitter – Base Voltage VEBO 12 Vdc
Collector Current — Continuous IC 500 mAdc

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board(1) PD 225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RqJA 556 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg – 55 to +150 °C

DEVICE MARKING
MMBT6427LT1 = 1V

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mAdc, VBE = 0) 40 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 mAdc, IE = 0) 40 —
Emitter – Base Breakdown Voltage V(BR)EBO Vdc
(IC = 10 mAdc, IC = 0) 12 —
Collector Cutoff Current ICES µAdc
(VCE = 25 Vdc, IB = 0) — 1.0
Collector Cutoff Current ICBO nAdc
(VCB = 30 Vdc, IE = 0) — 50
Emitter Cutoff Current IEBO nAdc
(VEB = 10 Vdc, IC = 0) — 50
1. FR– 5 = 1.0

0.75
0.062 in.
2. Alumina = 0.4 0.3

0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 10 mAdc, VCE = 5.0 Vdc) 10,000 100,000
(IC = 100 mAdc, VCE = 5.0 Vdc) 20,000 200,000
(IC = 500 mAdc, VCE = 5.0 Vdc) 14,000 140,000
Collector – Emitter Saturation Voltage VCE(sat)(3) Vdc
(IC = 50 mAdc, IB = 0.5 mAdc) — 1.2
(IC = 500 mAdc, IB = 0.5 mAdc) — 1.5
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 500 mAdc, IB = 0.5 mAdc) — 2.0
Base – Emitter On Voltage VBE(on) Vdc
(IC = 50 mAdc, VCE = 5.0 Vdc) — 1.75

SMALL– SIGNAL CHARACTERISTICS

Output Capacitance Cobo pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) — 7.0
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) — 15
Current Gain — High Frequency |hfe| Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1.3 —
Noise Figure NF dB
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) — 10

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 MMBT6427LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)

500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS ≈ 0 1.0
200
0.7
en, NOISE VOLTAGE (nV)

i n, NOISE CURRENT (pA)

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2

100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 2. Noise Voltage Figure 3. Noise Current

200 14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

BANDWIDTH = 10 Hz TO 15.7 kHz

12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)

10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0

10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100
RS, SOURCE RESISTANCE (kΩ) 0 RS, SOURCE RESISTANCE (kΩ) 0

Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

MMBT6427LT1
SMALL–SIGNAL CHARACTERISTICS

20 4.0
VCE = 5.0 V

|h fe |, SMALL–SIGNAL CURRENT GAIN

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)

7.0 Cibo
1.0
5.0 Cobo 0.8
0.6

3.0 0.4

2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance Figure 7. High Frequency Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN

50 k 25°C

30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (µA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.6 – 1.0
RθV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C

TJ = 25°C
1.4 – 2.0 *RqVC FOR VCE(sat)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
VCE(sat) @ IC/IB = 1000

0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 MMBT6427LT1
1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.2
r(t), TRANSIENT THERMAL

0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
0.02 ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 12. Thermal Response

FIGURE A

tP

PP PP

t1

1/f

DUTY CYCLE + t1 f + ttP1

PEAK PULSE POWER = PP

Design Note: Use of Transient Thermal Resistance Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

MMBT6427LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total interface between the board and the package. With the
design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when
be the correct size to insure proper solder connection subjected to a solder reflow process.

0.037
0.037 0.95
0.95

0.079
2.0

0.035
0.9

0.031 inches
0.8 mm

SOT–23

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
The melting temperature of solder is higher than the rated
soldering to a pad size given for maximum power dissipation.
temperature of the device. When the entire device is heated
Power dissipation for a surface mount device is determined
to a high temperature, failure to complete soldering within a
by T J(max), the maximum rated junction temperature of the
short time could result in device failure. Therefore, the
die, RθJA, the thermal resistance from the device junction to following items should always be observed in order to
ambient, and the operating temperature, TA . Using the minimize the thermal stress to which the devices are
values provided on the data sheet for the SOT–23 package, subjected.
PD can be calculated as follows: • Always preheat the device.
• The delta temperature between the preheat and
TJ(max) – TA
PD = soldering should be 100°C or less.*
RθJA • When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
The values for the equation are found in the maximum temperature ratings as shown on the data sheet. When
ratings table on the data sheet. Substituting these values into using infrared heating with the reflow soldering method,
the equation for an ambient temperature TA of 25°C, one can the difference shall be a maximum of 10°C.
calculate the power dissipation of the device which in this • The soldering temperature and time shall not exceed
case is 225 milliwatts. 260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
150°C – 25°C maximum temperature gradient shall be 5°C or less.
PD = = 225 milliwatts
556°C/W • After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
The 556°C/W for the SOT–23 package assumes the use Gradual cooling should be used as the use of forced
of the recommended footprint on a glass epoxy printed circuit cooling will increase the temperature gradient and result
board to achieve a power dissipation of 225 milliwatts. There in latent failure due to mechanical stress.
are other alternatives to achieving higher power dissipation • Mechanical stress or shock should not be applied during
from the SOT–23 package. Another alternative would be to cooling.
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal * Soldering a device without preheating can cause excessive
Clad, an aluminum core board, the power dissipation can be thermal shock and stress which can result in damage to the
doubled using the same footprint. device.

6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 MMBT6427LT1
PACKAGE DIMENSIONS

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
L Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
3 FINISH THICKNESS. MINIMUM LEAD THICKNESS
B S IS THE MINIMUM THICKNESS OF BASE
1 MATERIAL.
2

INCHES MILLIMETERS
V G DIM MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
C K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
H S 0.0830 0.0984 2.10 2.50
D J
K V 0.0177 0.0236 0.45 0.60

STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)

Motorola Small–Signal Transistors, FETs and Diodes Device Data 7

MMBT6427LT1

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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*MMBT6427LT1/D*
8 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT6427LT1/D
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