DATA SHEET

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IGBT, Field Stop

600 V, 75 A

FGY75N60SMD
TO−247−3LD
General Description CASE 340CD
Using novel field stop IGBT technology, onsemi’s new series of
field stop 2nd generation IGBTs offer the optimum performance for
solar inverter, UPS, welder and PFC applications where low C
conduction and switching losses are essential.

Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A G
• High Input Impedance
• Fast Switching: EOFF = 10 mJ/A E
• RoHS Compliant
MARKING DIAGRAM
Applications
• Solar Inverter, UPS, Welder, SMPS, PFC
ABSOLUTE MAXIMUM RATINGS $Y&Z&3&K
Symbol Parameter Value Unit FGY75N60
SMD
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ±20 V
Transient Gate to Emitter Voltage ±30 V
IC Collector Current, @ TC = 25°C 150 A
$Y = Logo
Collector Current, @ TC = 100°C 75 A &Z = Assembly Plant Code
ICM(1) Pulsed Collector Current, @ TC = 25°C 225 A &3 = Date Code (Year & Week)
&K = Lot Run Traceability Code
IF Diode Forward Current, @ TC = 25°C 75 A FGY75N60SMD = Specific Device Code
Diode Forward Current, @ TC = 100°C 50 A
IFM(1) Pulsed Diode Maximum Forward 225 A ORDERING INFORMATION
Current
PD Maximum Power Dissipation, 750 W Device Package Shipping
@ TC = 25°C
FGY75N60SMD TO−247−3LD 450 / Tube
Maximum Power Dissipation, 375 W (Pb−Free)
@ TC = 100°C
TJ Operating Junction Temperature −55 to +175 °C
Tstg Storage Temperature Range −55 to +175 °C
TL Maximum Lead Temp. for Soldering 300 °C
Purposes, 1/8″ from case for 5 s
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.

THERMAL CHARACTERISTICS
Symbol Parameter Typ Max Unit
RθJC(IGBT) Thermal Resistance, Junction to Case − 0.2 °C/W
RθJC(Diode) Thermal Resistance, Junction to Case − 0.48 °C/W
RqJA Thermal Resistance, Junction to Ambient − 40 °C/W

© Semiconductor Components Industries, LLC, 2018 1 Publication Order Number:

October, 2021 − Rev. 3 FGY75N60SMD/D
 FGY75N60SMD

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted.)

Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 mA 600 − − V
DBVCES / DTJ Temperature Coefficient of Breakdown VGE = 0 V, IC = 250 mA − 0.67 − V/°C
Voltage
ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA
IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICS
VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE 3.5 5.0 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 75 A, VGE = 15 V − 1.90 2.50 V
IC = 75 A, VGE = 15 V, TC = 175°C − 2.14 − V
DYNAMIC CHARACTERISTICS
Cies Input Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 3800 − pF
Coes Output Capacitance − 390 − pF
Cres Reverse Transfer Capacitance − 105 − pF
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VCC = 400 V, IC = 75 A, − 24 32 ns
RG = 3 W, VGE = 15 V,
tr Rise Time Inductive Load, TC = 25°C − 56 73 ns
td(off) Turn−Off Delay Time − 136 177 ns
tf Fall Time − 22 29 ns
Eon Turn−On Switching Loss − 2.3 2.99 mJ
Eoff Turn−Off Switching Loss − 0.77 1.00 mJ
Ets Total Switching Loss − 3.07 3.99 mJ
td(on) Turn−On Delay Time VCC = 400 V, IC = 75 A, − 23 − ns
RG = 3 W, VGE = 15 V,
tr Rise Time Inductive Load, TC = 175°C − 53 − ns
td(off) Turn−Off Delay Time − 146 − ns
tf Fall Time − 15 − ns
Eon Turn−On Switching Loss − 3.60 − mJ
Eoff Turn−Off Switching Loss − 1.11 − mJ
Ets Total Switching Loss − 4.71 − mJ
Qg Total Gate Charge VCE = 400 V, IC = 75 A, VGE = 15 V − 248 370 nC
Qge Gate to Emitter Charge − 28 42 nC
Qgc Gate to Collector Charge − 129 195 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted.)

Symbol Parameter Test Conditions Min Typ Max Unit
VFM Diode Forward Voltage IF = 50 A TC = 25°C − 1.75 2.1 V
TC = 175°C − 1.35 −
Erec Reverse Recovery Energy IF = 50 A, TC = 175°C − 0.14 − mJ
diF/dt = 200 A/ms
trr Diode Reverse Recovery Time VR = 400 V TC = 25°C − 41 55 ns
TC = 175°C − 126 −
Qrr Diode Reverse Recovery Charge TC = 25°C − 81 115 nC
TC = 175°C − 736 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGY75N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS

225 225
20 V 15 V 20 V
TC = 25°C TC = 175°C 12 V
12 V 15 V
180 180
IC, Collector Current (A)

IC, Collector Current (A)

10 V 10 V
135 135

90 90

VGE = 8 V
45 VGE = 8 V 45

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

225 225
Common Emitter Common Emitter
VGE = 15 V VCE = 20 V
180 TC = 25°C 180 TC = 25°C
IC, Collector Current (A)

IC, Collector Current (A)

TC = 175°C TC = 175°C

135 135

90 90

45 45

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics

3.5 20
VCE, Collector−Emitter Voltage (V)

VCE, Collector−Emitter Voltage (V)

Common Emitter Common Emitter

VGE = 15 V 150 A TC = −40°C
3.0 16

2.5 12
75 A
2.0 8

IC = 40 A
75 A
1.5 4 150 A

IC = 40 A
1.0 0
25 50 75 100 125 150 175 4 8 12 16 20
TC, Collector−Emitter Case Temperature (5C) VGE, Gate−Emitter Voltage (V)

Figure 5. Saturation Voltage vs. Case Temperature Figure 6. Saturation Voltage vs. VGE
at Variant Current Level

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 FGY75N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

20 20
VCE, Collector−Emitter Voltage (V)

VCE, Collector−Emitter Voltage (V)

Common Emitter Common Emitter
TC = 25°C TC = 175°C
16 16

12 12

8 8

75 A 75 A 150 A
4 150 A 4

IC = 40 A IC = 40 A
0 0
4 8 12 16 20 4 8 12 16 20
VGE, Gate−Emitter Voltage (V) VGE, Gate−Emitter Voltage (V)

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

8000 15
Common Emitter VGE, Gate−Emitter Voltage (V) Common Emitter 300 A
VGE = 0 V, f = 1 MHz ICE = 75 A, TC = 25°C
TC = 25°C 12
6000 Cies
VCC = 200 A
Capacitance (pF)

400 A
9
4000
Coes
6

2000 Cres
3

0 0
1 10 30 0 50 100 150 200 250
VCE, Collector−Emitter Voltage (V) Qg, Gage Charge (nC)
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

5500 200
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 75 A 100
1000
Switching Time (ns)

Switching Time (ns)

tf
td(off)

Common Emitter
100 VCC = 400 V, VGE = 15 V
td(on) IC = 75 A
tr

TC = 25°C TC = 25°C
TC = 175°C TC = 175°C
10 10
0 10 20 30 40 50 0 10 20 30 40 50
RG, Gate Resistance (W) RG, Gate Resistance (W)
Figure 11. Turn−off Characteristics vs. Gate Figure 12. Turn−on Characteristics vs. Gate
Resistance Resistance

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 FGY75N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

1000 200
Common Emitter Common Emitter
VGE = 15 V, RG = 3 W VGE = 15 V, RG = 3 W
100 tf

Switching Time (ns)

Switching Time (ns)

td(off)

100

td(on)
tr

TC = 25°C TC = 25°C
TC = 175°C TC = 175°C
10 10
0 30 60 90 120 150 0 30 60 90 120 150
IC, Collector Current (A) IC, Collector Current (A)

Figure 13. Turn−off Characteristics vs. Figure 14. Turn−on Characteristics vs.
Collector Current Collector Current

30 30
Common Emitter Common Emitter
VGE = 15 V, RG = 3 W VCC = 400 V, V7 = 15 V
10 Eon IC = 75 A
10
Switching Loss (mJ)

Switching Loss (mJ)

Eon

Eoff
1 Eoff

TC = 25°C 1 TC = 25°C
TC = 175°C TC = 175°C
0.1 0.5
0 30 60 90 120 150 0 10 20 30 40 50
IC, Collector Current (A) RG, Gate Resistance (W)

Figure 15. Switching Loss vs. Collector Figure 16. Switching Loss vs. Gate Resistance
Current

500 300
10 ms

100 100
100 ms
IC, Collector Current (A)

IC, Collector Current (A)

1 ms

10 10 ms

DC
10

1 Notes:
1. TC = 25°C
2. TJ = 175°C Safe Operating Area
3. Single Pulse VGE = 15 V, TC = 175°C
0.1 1
1 10 100 1000 10 100 1000
VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V)

Figure 17. SOA Characteristics Figure 18. Turn Off Switching SOA
Characteristics

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 FGY75N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

160 250
Common Emitter Square Wave
140 VGE = 15 V TJ < 175°C, D = 0.5,
200 VCE = 400 V,
IC, Collector Current (A)

IC, Collector Current (A)

120 VGE = 15/0 V, RG = 3 W
100 150
80 TC = 75°C

60 100
TC = 100°C
40
50
20

0 0
25 50 75 100 125 150 175 1k 10k 100k 1M
TC, Case Temperature (5C) f, Switching Frequency (Hz)
Figure 19. Current Derating Figure 20. Load Current vs. Frequency

400 10000
TC = 175°C
1000
IR, Reverse Current (A)
IF, Forward Current (A)

100
TC = 175°C TC = 125°C
100
TC = 75°C
10
TC = 125°C TC = 75°C
10
1
TC = 25°C
TC = 25°C
0.1

1 0.01
0 1 2 3 0 100 200 300 400 500 600
VF, Forward Voltage (V) VR, Reverse Voltage (V)

Figure 21. Forward Characteristics Figure 22. Reverse Current

900 200
TC = 25°C TC = 25°C
Qrr, Stored Recovery Charge (nC)

trr, Reverse Recovery Time (ns)

TC = 175°C TC = 175°C
750
160

600
120
450
di/dt = 200 A/ms di/dt = 200 A/ms
80 di/dt = 100 A/ms
300 di/dt = 100 A/ms

40
150

0 0
0 20 40 60 80 0 20 40 60 80
IF, Forward Current (A) IF, Forward Current (A)

Figure 23. Stored Charge Figure 24. Reverse Recovery Current

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 FGY75N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

0.3

0.5
Zthjc, Thermal Response

0.1
0.2

0.1

0.05 PDM
0.01
0.02
0.01 t1
Single Pulse t2
Duty Factor, D = t1/t2
Peak TJ = Pdm x Zthjc + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration (s)

Figure 25. Transient Thermal Impedance of IGBT

0.5
Zthjc, Thermal Response

0.2

0.1 0.1

PDM
0.05
t1
0.02
0.01 t2
0.01 Duty Factor, D = t1/t2
Single Pulse Peak TJ = Pdm x Zthjc + TC
0.005
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration (s)

Figure 26. Transient Thermal Impedance of Diode

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD
CASE 340CD
ISSUE A
DATE 18 SEP 2018

GENERIC
MARKING DIAGRAM*

XXXXXXXXX
AYWWG

XXXX = Specific Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13857G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD PAGE 1 OF 1

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